15HHSC138CBXXX [MICROSEMI]
Decoder/Driver, CMOS, CDIP16,;
| 型号： | 15HHSC138CBXXX |
| 厂家： | 
Microsemi |
| 描述： | Decoder/Driver, CMOS, CDIP16, 驱动 CD 逻辑集成电路 |
| 文件： | 总10页 (文件大小：129K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
THIS DOCUMENT IS FOR MAINTENANCE
PURPOSES ONLY AND IS NOT
RECOMMENDED FOR NEW DESIGNS
APRIL1995
ADVANCE INFORMATION
DS3593-2.3
15HSC Series
RADIATION HARD HIGH SPEED CMOS/SOS LOGIC
The 15HSC Series offer the conbined benefits of low power,
DEVICE TYPES
high speed CMOS with the inherent latch up immunity, Single
Event Upset (SEU) immunity and high level of radiation
hardness of Silicon on Sapphire technology.
15HSC138
15HSC163
3-Line to 8-Line Decoder/Multiplexer
Synchronous 4-Bit Counter
The 15HSC Series of CMOS/SOS devices are pin
compatible with the 54LS Series and the 54HSC Series, but
with a higher speed capability.
Further device types to those listed will be available shortly.
Please contact GPS for further information.
FEATURES
■ Radiation Hard to 1.5µm CMOS/SOS Technology
■ High SEU Immunity
■ Latch Up Free
■ Low Power CMOS/SOS Technology
■ Plug In Replacement for 54/74LS, HC and HCT
■ Dual In Line or Flatpack Packages
■ High Speed (Toggle Rate 100MHz)
15HSC Series
DC CHARACTERISTICS AND RATINGS
Note: Stresses above those listed may cause permanent
damage to the device. This is a stress rating only and
functional operation of the device at these conditions, or at
any other condition above those indicated in the operations
section of this specification, is not implied. Exposure to
absolute maximum rating conditions for extended periods
may affect device reliability.
Parameter
Min
-0.5
-0.3
-25
-55
-65
Max
10
Units
V
Supply Voltage
Input Voltage
VDD+0.3
+25
V
Current Through Any Pin
Operating Temperature
Storage Temperature
mA
°C
125
150
°C
Figure 1: Absolute Maximum Ratings
Total dose radiation not
exceeding 3x105 Rad(Si)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
VDD
VIH1
VIL1
VIH2
VIL2
VOH
Supply Voltage
-
-
-
-
-
4.5
2.0
-
5.0
5.5
-
V
V
V
V
V
HST Input High Voltage
HST Input Low Voltage
HSC Input High Voltage
HSC Input Low Voltage
Output High Voltage
-
-
-
-
0.8
-
3.5
-
1.5
VIN = VIH or VIL
IOH = -20µA*
VDD-0.1
3.7
-
-
-
-
-
-
V
V
V
I
OH = -6.0mA*
IOH = -11.0mA
VIN = VIH or VIL
2.5
VOL
Output Low Voltage
IOL = 20µA*
-
-
-
-
-
-
0.1
0.2
0.4
V
V
V
IOL = 6.0mA*
I
OL = 9.0mA
IIL
Input Leakage Current
Output Leakage Current
Quiescent Current
VIN = VDD or VSS
All inputs
-
-
-
-
-
-
±10
50
1
µA
IOL
VOUT = VDD or VSS
Outputs disabled
µA
IDD
VIN = VDD
mA
Outputs unloaded
VDD = 5V±10%, over full operating temperature range.
* = Guaranteed but not tested.
Figure 2: Electrical Characteristics
2
15HSC Series
15HSC138 : 3-Line to 8-Line Decoder/Multiplexer
Enable Inputs
Select Inputs
Outputs
Y3
G1 GN2A GN2B
C
B
A
Y0
Y1
Y2
Y4
Y5
Y6
Y7
X
X
L
H
X
X
L
L
L
L
L
L
L
L
X
H
X
L
L
L
L
L
L
L
L
X
X
X
L
L
L
X
X
X
L
X
X
X
L
H
L
H
L
H
L
H
H
H
L
H
H
H
H
H
H
H
H
H
H
H
L
H
H
H
H
H
H
H
H
H
H
H
L
H
H
H
H
H
H
H
H
H
H
H
L
H
H
H
H
H
H
H
H
H
H
H
L
H
H
H
H
H
H
H
H
L
H
H
H
H
H
H
H
H
H
L
H
H
H
H
H
H
H
H
H
H
L
H
H
H
H
H
H
H
H
L
H
H
L
L
H
H
L
H
H
H
H
H
H
H
H
H
H
H
H = high level, L = low level, X = irrelevant
Figure 3: Function Table
Spice
Symbol Parameter
Simulation
Max.
Units
tPLH
tPHL
tPLH
tPHL
Propagation delay. Address to Output
7.6
7.4
9.3
8.8
15
15
15
15
ns
ns
ns
ns
Propagation delay. Address to Output.
Propagation delay. G to Output
Propagation delay. G to Output
Figure 4: Switching Characteristics
1
2
3
4
5
6
7
8
VCC
16
A
B
VCC 16
1
2
3
4
5
6
7
8
A
15 Y0
14 Y1
Y0 15
Y1 14
Y2 13
Y3 12
Y4 11
Y5 10
B
C
C
Y2
Y3
Y4
Y5
Y6
GN2A
GN2B
G1
13
12
11
10
9
GN2A
GN2B
G1
Top
View
Bottom
View
Y7
Y7
Y6
9
VSS
VSS
Figure 5: DIL Pin Out
Figure 6: Flatpack Pin Out
3
15HSC Series
15HSC163 : 4-Bit Counter with Synchronous Clear
Spice
Symbol Parameter
Simulation
Max.
Units
tPLH
tPHL
tPLH
tPHL
tPLH
tPHL
Propagation delay. Clock to RCO
11.5
11.4
9.4
15
15
15
15
15
15
ns
ns
ns
ns
ns
ns
Propagation delay. Clock to RCO
Propagation delay. Clock to any Q
Propagation delay. Clock to any Q
Propagation delay. ENT to RCO
Propagation delay. ENT to RCO
9.6
8.5
8.4
Figure 7: Switching Characteristics
1
2
3
4
5
6
7
8
VDD
16
CLRN
CLK
A
VDD 16
1
2
3
4
5
6
7
8
CLRN
CLK
A
15 RCO
14 QA
RCO 15
QA 14
QB 13
QC 12
QD 11
ENT 10
QB
B
13
12
11
10
9
B
Bottom
View
Top
View
C
QC
C
D
QD
D
ENP
GND
ENT
LOADN
ENP
GND
LOADN
9
Figure 8: DIL Pin Out
Figure 9: Flatpack Pin Out
4
15HSC Series
Figure 10: Logic Diagram
5
15HSC Series
Millimetres
Inches
Ref
Min.
Nom.
Max.
5.60
1.53
0.59
0.36
20.58
-
Min.
Nom.
Max.
0.220
0.060
0.023
0.014
0.810
-
A
A1
b
-
-
-
-
0.38
-
0.015
-
0.35
-
0.014
-
c
0.20
-
0.008
-
D
-
-
-
-
e
-
2.54 Typ.
-
0.100 Typ.
e1
H
-
7.62 Typ.
-
-
0.300 Typ.
-
4.45
-
-
-
-
5.38
8.30
1.27
1.53
0.175
-
-
-
-
0.212
0.326
0.050
0.060
Me
Z
-
-
-
-
-
-
W
XG402
D
W
ME
Seating Plane
A1
A
C
H
e1
e
b
Z
15°
Figure 11: 16-Lead Ceramic DIL (Solder Seal) - Package Style C
6
15HSC Series
Inches
Ref
Min.
-
Nom.
Max.
0.103
-
A
A1
b
-
0.026
0.015
0.004
0.392
-
-
-
0.019
0.006
0.408
-
c
-
D
-
e
0.050
L
0.250
0.264
0.184
0.005
-
-
-
-
0.305
0.276
0.196
-
M
E2
Z
XG534
M
b
D
Z
e
L
A
c
E2
A1
Pin 1
Figure 12: 16-Lead Bottom Braize Flatpack (Solder Seal) - Package Style F
7
15HSC Series
RADIATION TOLERANCE
Total Dose (Function to specification)*
Transient Upset (Stored data loss)
Transient Upset (Survivability)
Neutron Hardness (Function to specification)
Single Event Upset**
3x105 Rad(Si)
1x1011 Rad(Si)/sec
>1x1012 Rad(Si)/sec
>1x1015 n/cm2
Total Dose Radiation Testing
For product procured to guaranteed total dose radiation
levels, each wafer lot will be approved when all sample devices
from each lot pass the total dose radiation test.
The sample devices will be subjected to the total dose
radiation level (Cobalt-60 Source), defined by the ordering
code, and must continue to meet the electrical parameters
specified in the data sheet. Electrical tests, pre and post
irradiation, will be read and recorded.
<1x10-10 Errors/bit day
Not possible
Latch Up
* Other total dose radiation levels available on request
** Worst case galactic cosmic ray upset - interplanetary/high altitude orbit
GEC Plessey Semiconductors can provide radiation testing
compliant with MIL-STD-883 test method 1019, Ionizing
Radiation (Total Dose).
Figure 13: Radiation Hardness Parameters
ORDERING INFORMATION
Unique Circuit Designator
15xHSC139xxxxx
Radiation Tolerance
S
R
Q
H
Radiation Hard Processing
100 kRads (Si) Guaranteed
300 kRads (Si) Guaranteed
1000 kRads (Si) Guaranteed
QA/QCI Process
(See Section 9 Part 4)
Test Process
(See Section 9 Part 3)
Package Type
C
F
N
Ceramic DIL (Solder Seal)
Flatpack (Solder Seal)
Naked Die
Assembly Process
(See Section 9 Part 2)
Reliability Level
L
Rel 0
C
D
E
B
S
Rel 1
Rel 2
Rel 3/4/5/STACK
Class B
Class S
For details of reliability, QA/QC, test and assembly
options, see ‘Manufacturing Capability and Quality
Assurance Standards’ Section 9.
8
15HSC Series
HEADQUARTERS OPERATIONS
CUSTOMER SERVICE CENTRES
• FRANCE & BENELUX Les Ulis Cedex Tel: (1) 64 46 23 45 Fax: (1) 64 46 06 07
• GERMANY Munich Tel: (089) 3609 06-0 Fax: (089) 3609 06-55
• ITALY Milan Tel: (02) 66040867 Fax: (02) 66040993
GEC PLESSEY SEMICONDUCTORS
Cheney Manor, Swindon,
Wiltshire, SN2 2QW, United Kingdom.
Tel: (01793) 518000
• JAPAN Tokyo Tel: (03) 5276-5501 Fax: (03) 5276-5510
• NORTH AMERICA Scotts Valley, USA Tel: (408) 438 2900 Fax: (408) 438 7023
• SOUTH EAST ASIA Singapore Tel: (65) 3827708 Fax: (65) 3828872
• SWEDEN Stockholm Tel: 46 8 702 97 70 Fax: 46 8 640 47 36
• TAIWAN, ROC Taipei Tel: 886 2 5461260 Fax: 886 2 7190260
• UK, EIRE, DENMARK, FINLAND & NORWAY Swindon, UK Tel: (01793) 518527/518566
Fax: (01793) 518582
Fax: (01793) 518411
GEC PLESSEY SEMICONDUCTORS
P.O. Box 660017,
1500 Green Hills Road, Scotts Valley,
California 95067-0017,
United States of America.
Tel: (408) 438 2900
Fax: (408) 438 5576
These are supported by Agents and Distributors in major countries world-wide.
© GEC Plessey Semiconductors 1995 Publication No. DS3593-2.3 April 1995
TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRINTED IN UNITED KINGDOM.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be
regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or
service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only
and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any
equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure
to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
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