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10EZ68

更新时间：2024-09-18 02:10:38
品牌：MICROSEMI
描述：Silicon 10 WATT Zener Diodes

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10EZ68 概述

Silicon 10 WATT Zener Diodes 硅10瓦齐纳二极管 齐纳二极管

10EZ68 规格参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：TO-220AB包装说明：TO-220, 3 PIN
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.92外壳连接：ANODE
配置：COMMON ANODE, 2 ELEMENTS二极管元件材料：SILICON
二极管类型：ZENER DIODE最大动态阻抗：18 Ω
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e0元件数量：2
端子数量：3最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性：UNIDIRECTIONAL最大功率耗散：10 W
认证状态：Not Qualified标称参考电压：68 V
子类别：Voltage Reference Diodes表面贴装：NO
技术：ZENER端子面层：TIN LEAD
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED最大电压容差：10%
工作测试电流：37 mABase Number Matches：1

10EZ68 数据手册

通过下载10EZ68数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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8700 E. Thomas Rd.  
Scottsdale, AZ 85252  
PH: (480) 941-6300  
FAX: (480) 947-1503  
10EZ3.9  
thru  
10EZ100  
Features  
·
·
·
Zener Voltage 3.9 to 100V  
Voltage Tolerances; + 5%, + 10% (See Note 1)  
Low profile cost effective TO-220 package  
Silicon  
10 WATT  
Zener Diodes  
Maximum Ratings  
Junction and Storage Temperatures: - 65°C to + 175°C  
DC Power Dissipation: 10 Watts  
Power Derating: 200 mW/°C above 100°C base temperature (see figure 2)  
F
C
A
Forward Voltage @ 2.0A: 1.5 Volts  
B
G
D
E
Mechanical Characteristics  
1
2
3
Case:  
Industry Standard TO-220  
All external surfaces are corrosion resistant and  
terminal solderable.  
H
Finish:  
P
J
Weight:  
2.3 grams  
Mounting Position:  
Thermal Resistance:  
Polarity:  
Any  
K1  
5°C/W (Typical) junction to base.  
Standard polarity is anode to base (pin 2)  
And pins 1 and 3 are cathode.  
Reverse polarity (cathode to base) is also  
available with R suffix.  
K
M
N
L
DIM  
INCHES  
MILIMETER  
12  
10  
MIN  
.390  
.045  
.180  
.245  
.590  
.139  
.100  
___  
MAX  
MIN  
MAX  
10.54  
1.40  
4.83  
6.60  
15.37  
3.73  
3.05  
6.35  
14.48  
5.33  
2.79  
6.40  
2.92  
.970  
1.40  
NOTES  
A
B
.415  
.055  
.190  
.260  
.605  
.147  
.120  
.250  
.570  
.210  
.110  
.025  
.115  
.038  
.055  
9.91  
1.14  
4.57  
6.22  
14.99  
3.53  
2.54  
C
D
E
8
6
F
DIA.  
4
2
0
G
H
J
.540  
.190  
.090  
.021  
.080  
.028  
.045  
13.72  
4.83  
2.29  
5.33  
2.03  
.710  
1.14  
K
0
25  
50  
75  
100  
125  
175  
150  
K1  
L
Tab Temperature O(C)  
Figure 2  
Power Derating Curve  
M
N
P
t
Datasheet# MSC0324A Date:04/30/99  
Microsemi  
Part  
Number  
Nominal  
Zener  
Voltage VZ  
@ IZT Volts  
(Note 2)  
Zener Test  
Current  
Max. Dynamic  
Impedance  
(Note 3)  
Max DC  
Zener  
Current  
Typical  
Temperature  
Coefficient a VZ  
%/°C  
Max** Leakage  
Current  
(IZT  
)
IR  
@
VR  
mA  
ZZT @ IZT  
OCHMS  
ZZK @ 1mA (IZK) (IZM) @ 75°C  
mA  
Volts  
OHMS  
Base Temp.  
(Note 4)  
mA  
10EZ3.9  
10EZ4.3  
10EZ4.7  
10EZ5.1  
10EZ5.6  
10EZ6.2  
3.9  
4.3  
4.7  
5.1  
5.6  
6.2  
640  
580  
530  
490  
445  
405  
2.0  
1.5  
1.2  
1.1  
1.0  
1.1  
400  
400  
500  
550  
600  
750  
2380  
2130  
1940  
1780  
1620  
1460  
100  
100  
80  
10  
10  
0.5  
0.5  
1.0  
1.0  
1.0  
2.0  
¾ .046  
¾ .033  
¾ .015  
±.010  
+.030  
+.049  
.040  
.045  
.048  
.051  
.055  
.060  
.065  
.065  
.070  
.070  
.070  
.075  
.075  
.075  
.075  
.080  
.080  
.080  
.085  
.085  
.085  
.085  
.090  
.090  
.090  
.090  
.090  
.090  
.090  
.090  
.090  
.090  
.090  
.090  
.090  
.090  
10  
10EZ6.8  
10EZ7.5  
10EZ8.2  
10EZ9.1  
10EZ10  
10EZ11  
10EZ12  
10EZ13  
10EZ14  
10EZ15  
10EZ16  
10EZ17  
10EZ18  
10EZ19  
10EZ20  
10EZ22  
10EZ24  
10EZ25  
10EZ27  
10EZ30  
10EZ33  
10EZ36  
10EZ39  
10EZ43  
10EZ45  
10EZ47  
10EZ50  
10EZ51  
10EZ52  
10EZ56  
10EZ62  
10EZ68  
10EZ75  
10EZ82  
10EZ91  
10EZ100  
6.8  
7.5  
8.2  
9.1  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
22  
24  
25  
27  
30  
33  
36  
39  
43  
45  
47  
50  
51  
52  
56  
62  
68  
75  
82  
91  
100  
370  
335  
305  
275  
250  
230  
210  
190  
180  
170  
155  
145  
140  
130  
125  
115  
105  
100  
95  
85  
75  
70  
65  
60  
55  
55  
50  
1.2  
1.3  
1.5  
2.0  
3
3
3
3
3
3
4
4
4
4
4
5
5
6
7
500  
250  
250  
250  
250  
250  
250  
250  
250  
250  
250  
250  
250  
250  
250  
250  
250  
250  
250  
300  
300  
300  
300  
400  
400  
400  
500  
500  
500  
500  
600  
600  
600  
700  
800  
900  
1320  
1180  
1040  
960  
860  
780  
720  
660  
600  
560  
530  
500  
460  
440  
420  
380  
350  
310  
300  
280  
260  
230  
210  
195  
185  
175  
165  
160  
160  
150  
130  
120  
110  
100  
85  
150  
100  
50  
25  
25  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
5.2  
5.7  
5.2  
6.9  
7.6  
8.4  
9.1  
9.9  
10.5  
11.4  
12.2  
13.0  
13.7  
14.0  
15.2  
16.7  
18.2  
18.2  
20.6  
22.8  
25.1  
27.4  
29.7  
32.7  
33.0  
35.8  
36.0  
38.8  
39.0  
42.6  
47.1  
51.7  
56.0  
62.2  
69.2  
76.0  
8
9
10  
11  
12  
13  
14  
15  
15  
15  
16  
17  
18  
22  
25  
35  
40  
50  
50  
45  
40  
37  
33  
30  
28  
25  
80  
NOTE 1. 10EZ3.9 – 10EZ100A series: suffix A indicates ± 5% tolerance, no suffix indicates ± 10% tolerance. If  
tighter tolerance is required, consult factory.  
NOTE 2. The electrical characteristics are measured after allowing the device to stabilize for 90 seconds with  
30°C base temperature. Voltage change with other current values are described in Micronote 202.  
NOTE 3. The zener impedence (ZZT) is derived from the 60 Hz ac voltage, which results when an ac current  
having an rms value equal to 10% of the dc zener current (IZT or IZK) is superimposed on IZT or IZK. Dynamic  
impedance variations with other current values are described in Micronote 202.  
NOTE 4. These values of IZM may be exceeded in the case of individual diodes. The values shown are  
calculated for the worst case which is at the high voltage end of its tolerance range (for ± 5%). Allowance has  
also been made for the rise in zener voltage above Vzt, which results from zener impedance and the increase in  
junction temperature as power dissipation approaches 10 watts.  
Datasheet# MSC0324A Date:04/30/99  

10EZ68 相关器件

型号 制造商 描述 价格 文档
10EZ68AR MICROSEMI Zener Diode, 68V V(Z), 5%, 10W, Silicon, Unidirectional, TO-220AB, TO-220, 3 PIN 获取价格
10EZ68R MICROSEMI Zener Diode, 68V V(Z), 10%, 10W, Silicon, Unidirectional, TO-220AB, TO-220, 3 PIN 获取价格
10EZ7.5 NJSEMI Silicon 10 WATT Zener Diodes 获取价格
10EZ75 MICROSEMI Silicon 10 WATT Zener Diodes 获取价格
10EZ75A MICROSEMI Silicon 10 WATT Zener Diodes 获取价格
10EZ75AR MICROSEMI Zener Diode, 75V V(Z), 5%, 10W, Silicon, Unidirectional, TO-220AB, TO-220, 3 PIN 获取价格
10EZ75R MICROSEMI Zener Diode, 75V V(Z), 10%, 10W, Silicon, Unidirectional, TO-220AB, TO-220, 3 PIN 获取价格
10EZ8.2 NJSEMI Silicon 10 WATT Zener Diodes 获取价格
10EZ8.2AR MICROSEMI Zener Diode, 8.2V V(Z), 5%, 10W, Silicon, Unidirectional, TO-220AB, TO-220, 3 PIN 获取价格
10EZ8.2R MICROSEMI Zener Diode, 8.2V V(Z), 10%, 10W, Silicon, Unidirectional, TO-220AB, TO-220, 3 PIN 获取价格

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