M25P32-VMW3TGB [MICRON]
Micron M25P32 Serial Flash Embedded Memory;
| 型号： | M25P32-VMW3TGB |
| 厂家： | 
MICRON TECHNOLOGY |
| 描述： | Micron M25P32 Serial Flash Embedded Memory |
| 文件： | 总50页 (文件大小：658K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Micron M25P32 Serial Flash Embedded Memory
Features
Micron M25P32 Serial Flash Embedded
Memory
M25P32-VMF3TPB, -VMF6PBA, -VMF6TP
M25P32-VMW3TGB, VMW6GBA
• Electronic signature
– JEDEC standard 2-byte signature (2016h)
– Unique ID code (UID) and 16 bytes of common
flash interface (CFI) data
Features
• SPI bus compatible serial interface
• 32Mb Flash memory
• 75 MHz clock frequency (maximum)
• 2.7V to 3.6V single supply voltage
• VPP = 9V for FAST PROGRAM/ERASE mode (option-
al)
• Page program (up to 256 bytes) in 0.64ms (TYP)
• Erase capability
– RES command, one-byte signature (15h) for
backward compatibility
• More than 100,000 write cycles per sector
• More than 20 years data retention
• Automotive grade parts available
• Packages (RoHS compliant)
– Sector erase: 512Kb in 0.6 s (TYP)
– Bulk erase: 23 s (TYP); 17 s (TYP) with VPP = 9V
• Write protection
– Hardware write protection: protected area size
defined by non-volatile bits BP0, BP1, BP2
• Deep power down: 1µA (TYP)
– SO8W (MW) 208 mils
– SO16 (MF) 300 mils
– VFQFPN8 (MP) MLP8 6mm x 5mm
– VFDFPN8 (MP) MLP8 8mm x 6mm
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Products and specifications discussed herein are subject to change by Micron without notice.
Micron M25P32 Serial Flash Embedded Memory
Features
Contents
Functional Description ..................................................................................................................................... 6
Signal Descriptions ........................................................................................................................................... 8
SPI Modes ........................................................................................................................................................ 9
Operating Features ......................................................................................................................................... 11
Page Programming ..................................................................................................................................... 11
Sector Erase, Bulk Erase .............................................................................................................................. 11
Polling during a Write, Program, or Erase Cycle ............................................................................................ 11
Active Power, Standby Power, and Deep Power-Down .................................................................................. 11
Status Register ............................................................................................................................................ 12
Data Protection by Protocol ........................................................................................................................ 12
Software Data Protection ............................................................................................................................ 12
Hardware Data Protection .......................................................................................................................... 12
Hold Condition .......................................................................................................................................... 13
Configuration and Memory Map ..................................................................................................................... 14
Memory Configuration and Block Diagram .................................................................................................. 14
Memory Map – 32Mb Density ......................................................................................................................... 15
Command Set Overview ................................................................................................................................. 16
WRITE ENABLE .............................................................................................................................................. 18
WRITE DISABLE ............................................................................................................................................. 19
READ IDENTIFICATION ................................................................................................................................. 20
READ STATUS REGISTER ................................................................................................................................ 21
WIP Bit ...................................................................................................................................................... 21
WEL Bit ...................................................................................................................................................... 21
BP2, BP1, BP0 Bits ...................................................................................................................................... 22
SRWD Bit ................................................................................................................................................... 22
WRITE STATUS REGISTER .............................................................................................................................. 23
READ DATA BYTES ......................................................................................................................................... 25
READ DATA BYTES at HIGHER SPEED ............................................................................................................ 26
PAGE PROGRAM ............................................................................................................................................ 27
SECTOR ERASE .............................................................................................................................................. 28
BULK ERASE .................................................................................................................................................. 29
DEEP POWER-DOWN ..................................................................................................................................... 30
RELEASE from DEEP POWER-DOWN .............................................................................................................. 31
READ ELECTRONIC SIGNATURE .................................................................................................................... 32
Power-Up/Down and Supply Line Decoupling ................................................................................................. 33
Power-Up Timing and Write Inhibit Voltage Threshold Specifications ............................................................... 35
Maximum Ratings and Operating Conditions .................................................................................................. 36
Electrical Characteristics ................................................................................................................................ 37
AC Characteristics .......................................................................................................................................... 38
Package Information ...................................................................................................................................... 43
Device Ordering Information .......................................................................................................................... 47
Standard Parts ............................................................................................................................................ 47
Automotive Parts ........................................................................................................................................ 47
Revision History ............................................................................................................................................. 49
Rev. M – 09/2011 ........................................................................................................................................ 49
Rev. 12.0 – 3/2010 ....................................................................................................................................... 49
Rev. 11.0 – 10/2009 ..................................................................................................................................... 49
Rev. 10.0 – 2/2009 ....................................................................................................................................... 49
Rev. 9.0 – 12/2008 ....................................................................................................................................... 49
Rev. 8.0 – 11/2008 ....................................................................................................................................... 49
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Micron M25P32 Serial Flash Embedded Memory
Features
Rev. 7.0 – 6/2007 ......................................................................................................................................... 49
Rev. 6.0 – 11/2006 ....................................................................................................................................... 50
Rev. 5.0 – 2/2006 ......................................................................................................................................... 50
Rev. 4.0 – 01/2006 ....................................................................................................................................... 50
Rev. 3.0 – 8/2005 ......................................................................................................................................... 50
Rev. 2.0 – 4/2005 ......................................................................................................................................... 50
Rev. 1.0 – 10/2004 ....................................................................................................................................... 50
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Micron M25P32 Serial Flash Embedded Memory
Features
List of Figures
Figure 1: Logic Diagram ................................................................................................................................... 6
Figure 2: Pin Connections: SO8, MLP8 ............................................................................................................. 7
Figure 3: Pin Connections: SO16 ...................................................................................................................... 7
Figure 4: SPI Modes Supported ........................................................................................................................ 9
Figure 5: Bus Master and Memory Devices on the SPI Bus ............................................................................... 10
Figure 6: Hold Condition Activation ............................................................................................................... 13
Figure 7: Block Diagram ................................................................................................................................ 14
Figure 8: WRITE ENABLE Command Sequence .............................................................................................. 18
Figure 9: WRITE DISABLE Command Sequence ............................................................................................. 19
Figure 10: READ IDENTIFICATION Command Sequence ................................................................................ 20
Figure 11: READ STATUS REGISTER Command Sequence .............................................................................. 21
Figure 12: Status Register Format ................................................................................................................... 21
Figure 13: WRITE STATUS REGISTER Command Sequence ............................................................................. 23
Figure 14: READ DATA BYTES Command Sequence ........................................................................................ 25
Figure 15: READ DATA BYTES at HIGHER SPEED Command Sequence ........................................................... 26
Figure 16: PAGE PROGRAM Command Sequence ........................................................................................... 27
Figure 17: SECTOR ERASE Command Sequence ............................................................................................. 28
Figure 18: BULK ERASE Command Sequence ................................................................................................. 29
Figure 19: DEEP POWER-DOWN Command Sequence ................................................................................... 30
Figure 20: RELEASE from DEEP POWER-DOWN Command Sequence ............................................................. 31
Figure 21: READ ELECTRONIC SIGNATURE Command Sequence .................................................................. 32
Figure 22: Power-Up Timing .......................................................................................................................... 34
Figure 23: AC Measurement I/O Waveform ..................................................................................................... 38
Figure 24: Serial Input Timing ........................................................................................................................ 41
Figure 25: Write Protect Setup and Hold during WRSR when SRWD=1 Timing ................................................. 41
Figure 26: Hold Timing .................................................................................................................................. 42
Figure 27: Output Timing .............................................................................................................................. 42
Figure 28: SO8W 208 mils Body Width ............................................................................................................ 43
Figure 29: SO16W 300 mils Body Width .......................................................................................................... 44
Figure 30: VFQFPN8 (MLP8) 6mm x 5mm ...................................................................................................... 45
Figure 31: VFDFPN8 (MLP8) 8mm x 6mm ...................................................................................................... 46
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Micron M25P32 Serial Flash Embedded Memory
Features
List of Tables
Table 1: Signal Names ...................................................................................................................................... 6
Table 2: Signal Descriptions ............................................................................................................................. 8
Table 3: Protected Area Sizes .......................................................................................................................... 12
Table 4: Sectors 63:0 ...................................................................................................................................... 15
Table 5: Command Set Codes ........................................................................................................................ 17
Table 6: READ IDENTIFICATION Data Out Sequence ..................................................................................... 20
Table 7: Status Register Protection Modes ...................................................................................................... 23
Table 8: Power-Up Timing and VWI Threshold ................................................................................................. 35
Table 9: Absolute Maximum Ratings .............................................................................................................. 36
Table 10: Operating Conditions ...................................................................................................................... 36
Table 11: Data Retention and Endurance ........................................................................................................ 36
Table 12: DC Current Specifications ............................................................................................................... 37
Table 13: DC Voltage Specifications ................................................................................................................ 37
Table 14: AC Measurement Conditions ........................................................................................................... 38
Table 15: Capacitance .................................................................................................................................... 38
Table 16: AC Specifications (75MHz, Device Grade 3 and 6, VCC[min])=2.7V ..................................................... 39
Table 17: Instruction Times, Process Technology 110nm ................................................................................. 40
Table 18: Part Number Example ..................................................................................................................... 47
Table 19: Part Number Information Scheme ................................................................................................... 47
Table 20: Part Number Example ..................................................................................................................... 48
Table 21: Part Number Information Scheme ................................................................................................... 48
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Micron M25P32 Serial Flash Embedded Memory
Functional Description
Functional Description
The M25P32 is a 32Mb (4Mb x 8) serial Flash memory device with advanced write pro-
tection mechanisms accessed by a high speed SPI-compatible bus. The device supports
high-performance commands for clock frequency up to 75MHz.
The memory can be programmed 1 to 256 bytes at a time using the PAGE PROGRAM
command. It is organized as 64 sectors, each containing 256 pages. Each page is 256
bytes wide. Memory can be viewed either as 16,384 pages or as 4,194,304 bytes. The en-
tire memory can be erased using the BULK ERASE command, or it can be erased one
sector at a time using the SECTOR ERASE command.
This datasheet details the functionality of the M25P32 device based on 110nm process.
Figure 1: Logic Diagram
V
CC
DQ0
C
DQ1
S#
W#
HOLD#
V
SS
Table 1: Signal Names
Signal Name
Function
Direction
Input
I/O
C
Serial clock
DQ0
DQ1
S#
Serial data input
Serial data output
Chip select
Write protect
Hold
I/O
Input
Input
Input
–
W#
HOLD#
VCC
VSS
Supply voltage
Ground
–
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Micron M25P32 Serial Flash Embedded Memory
Functional Description
Figure 2: Pin Connections: SO8, MLP8
V
1
2
3
4
8
7
6
5
S#
DQ1
W#
CC
HOLD#
C
V
DQ0
SS
1. There is an exposed central pad on the underside of the MLP8 package that is pulled in-
ternally to VSS, and must not be connected to any other voltage or signal line on the
PCB. The Package Mechanical section provides information on package dimensions and
how to identify pin 1.
Note:
Figure 3: Pin Connections: SO16
HOLD#
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
C
V
DQ0
DU
DU
DU
DU
CC
DU
DU
DU
DU
S#
V
SS
DQ1
W#/V
PP
1. DU = Don't Use
Notes:
2. The Package Mechanical section provides information on package dimensions and how
to identify pin 1.
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Micron M25P32 Serial Flash Embedded Memory
Signal Descriptions
Signal Descriptions
All signals types listed here may not be supported on this device. See Signal Assign-
ments for information specific to this device.
Table 2: Signal Descriptions
Signal
Type
Description
DQ1
Output
Serial data: The DQ1 output signal is used to transfer data serially out of the device.
Data is shifted out on the falling edge of the serial clock (C).
DQ0
C
Input
Input
Input
Serial data: The DQ0 input signal is used to transfer data serially into the device. It
receives commands, addresses, and the data to be programmed. Values are latched on
the rising edge of the serial clock (C).
Clock: The C input signal provides the timing of the serial interface. Commands, ad-
dresses, or data present at serial data input (DQ0) are latched on the rising edge of
the serial clock (C). Data on DQ1 changes after the falling edge of C.
S#
Chip select: When the S# input signal is HIGH, the device is deselected and DQ1 is at
HIGH impedance. Unless an internal PROGRAM, ERASE, or WRITE STATUS REGISTER cy-
cle is in progress, the device will be in the standby power mode (not the deep power-
down mode). Driving S# LOW enables the device, placing it in the active power mode.
After power-up, a falling edge on S# is required prior to the start of any command.
HOLD#
W#
Input
Input
Hold: The HOLD# signal is used to pause any serial communications with the device
without deselecting the device. During the hold condition, DQ1 is HIGH impedance.
DQ0 and C are Don’t care. To start the hold condition, the device must be selected,
with S# driven LOW.
Write protect: The W# input signal is used to freeze the size of the area of memory
that is protected against program or erase commands as specified by the values in
BP2, BP1, and BP0 bits of the Status Register.
VCC
VSS
Input
Input
Device core power supply: Source voltage.
Ground: Reference for the VCC supply voltage..
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Micron M25P32 Serial Flash Embedded Memory
SPI Modes
SPI Modes
These devices can be driven by a microcontroller with its serial peripheral interface
(SPI) running in either of the following two SPI modes:
• CPOL=0, CPHA=0
• CPOL=1, CPHA=1
For these two modes, input data is latched in on the rising edge of serial clock (C), and
output data is available from the falling edge of C.
The difference between the two modes is the clock polarity when the bus master is in
STANDBY mode and not transferring data:
• C remains at 0 for (CPOL=0, CPHA=0)
• C remains at 1 for (CPOL=1, CPHA=1)
Figure 4: SPI Modes Supported
CPOL
0
CPHA
0
C
C
1
1
DQ0
DQ1
MSB
MSB
Because only one device is selected at a time, only one device drives the serial data out-
put (DQ1) line at a time, while the other devices are HIGH-Z. An example of three devi-
ces connected to an MCU on an SPI bus is shown here.
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Micron M25P32 Serial Flash Embedded Memory
SPI Modes
Figure 5: Bus Master and Memory Devices on the SPI Bus
V
SS
V
CC
R
SDO
SDI
SPI interface with
(CPOL, CPHA) =
(0, 0) or (1, 1)
SCK
C
V
V
V
CC
C
C
CC
CC
V
V
V
SS
SS
SS
SPI Bus Master
DQ1 DQ0
DQ1 DQ0
DQ1 DQ0
SPI memory
device
SPI memory
device
SPI memory
device
R
R
R
CS3
CS2
CS1
W#
HOLD#
S#
S#
W# HOLD#
S#
W#
HOLD#
1. WRITE PROTECT (W#) and HOLD# should be driven HIGH or LOW as appropriate.
Notes:
2. Resistors (R) ensure that the memory device is not selected if the bus master leaves the
S# line HIGH-Z.
3. The bus master may enter a state where all I/O are HIGH-Z at the same time; for exam-
ple, when the bus master is reset. Therefore, the C must be connected to an external
pull-down resistor so that when all I/O are HIGH-Z, S# is pulled HIGH while C is pulled
LOW. This ensures that S# and C do not go HIGH at the same time and that the tSHCH
requirement is met.
4. The typical value of R is 100 kΩ, assuming that the time constant R × Cp (Cp = parasitic
capacitance of the bus line) is shorter than the time during which the bus master leaves
the SPI bus HIGH-Z.
5. Example: Given that Cp = 50 pF (R × Cp = 5μs), the application must ensure that the bus
master never leaves the SPI bus HIGH-Z for a time period shorter than 5μs.
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Micron M25P32 Serial Flash Embedded Memory
Operating Features
Operating Features
Page Programming
To program one data byte, two commands are required: WRITE ENABLE, which is one
byte, and a PAGE PROGRAM sequence, which is four bytes plus data. This is followed by
the internal PROGRAM cycle of duration tPP. To spread this overhead, the PAGE PRO-
GRAM command allows up to 256 bytes to be programmed at a time (changing bits
from 1 to 0), provided they lie in consecutive addresses on the same page of memory. To
optimize timings, it is recommended to use the PAGE PROGRAM command to program
all consecutive targeted bytes in a single sequence than to use several PAGE PROGRAM
sequences with each containing only a few bytes.
Sector Erase, Bulk Erase
The PAGE PROGRAM command allows bits to be reset from 1 to 0. Before this can be
applied, the bytes of memory need to have been erased to all 1s (FFh). This can be ach-
ieved a sector at a time using the SECTOR ERASE command, or throughout the entire
memory using the BULK ERASE command. This starts an internal ERASE cycle of dura-
tion tSSE, tSE or tBE. The ERASE command must be preceded by a WRITE ENABLE com-
mand.
Polling during a Write, Program, or Erase Cycle
An improvement in the time to complete the following commands can be achieved by
not waiting for the worst case delay (tW, tPP, tSE, or tBE).
• WRITE STATUS REGISTER
• PROGRAM
• ERASE (SECTOR ERASE, BULK ERASE)
The write in progress (WIP) bit is provided in the status register so that the application
program can monitor this bit in the status register, polling it to establish when the pre-
vious WRITE cycle, PROGRAM cycle, or ERASE cycle is complete.
Active Power, Standby Power, and Deep Power-Down
When chip select (S#) is LOW, the device is selected, and in the ACTIVE POWER mode.
When S# is HIGH, the device is deselected, but could remain in the ACTIVE POWER
mode until all internal cycles have completed (PROGRAM, ERASE, WRITE STATUS
REGISTER). The device then goes in to the STANDBY POWER mode. The device con-
sumption drops to ICC1
.
The DEEP POWER-DOWN mode is entered when the DEEP POWER-DOWN command
is executed. The device consumption drops further to ICC2. The device remains in this
mode until the RELEASE FROM DEEP POWER-DOWN command is executed. While in
the DEEP POWER-DOWN mode, the device ignores all WRITE, PROGRAM, and ERASE
commands. This provides an extra software protection mechanism when the device is
not in active use, by protecting the device from inadvertent WRITE, PROGRAM, or
ERASE operations. For further information, see DEEP POWER-DOWN (page 30).
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Micron M25P32 Serial Flash Embedded Memory
Operating Features
Status Register
The status register contains a number of status and control bits that can be read or set
(as appropriate) by specific commands. For a detailed description of the status register
bits, see READ STATUS REGISTER (page 21).
Data Protection by Protocol
Non-volatile memory is used in environments that can include excessive noise. The fol-
lowing capabilities help protect data in these noisy environments.
Power on reset and an internal timer (tPUW) can provide protection against inadvertent
changes while the power supply is outside the operating specification.
WRITE, PROGRAM, and WRITE STATUS REGISTER commands are checked before they
are accepted for execution to ensure they consist of a number of clock pulses that is a
multiple of eight.
All commands that modify data must be preceded by a WRITE ENABLE command to set
the write enable latch (WEL) bit.
In addition to the low power consumption feature, the DEEP POWER-DOWN mode of-
fers extra software protection since all WRITE, PROGRAM, and ERASE commands are
ignored when the device is in this mode.
Software Data Protection
Software data protection is achieved as follows:
Memory can be configured as read-only using the block protect bits (BP2, BP1, BP0) as
shown in the Protected Area Sizes table.
Hardware Data Protection
Hardware data protection is implemented using the write protect signal applied on the
W# pin. This freezes the status register in a read-only mode. In this mode, the block pro-
tect bits (BP2, BP1, BP0) and the status register write disable bit (SRWD) are protected.
Table 3: Protected Area Sizes
Status Register Content
Memory Content
BP Bit 2
BP Bit 1
BP Bit 0
Protected Area
Unprotected Area
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
none
All sectors (sectors 0 to 63)
Lower 63/64ths (sectors 0 to 62)
Lower 31/32nds (sectors 0 to 61)
Lower 15/16ths (sectors 0 to 59)
Lower 7/8ths (sectors 0 to 55)
Lower 3/4ths (sectors 0 to 47)
Lower half (sectors 0 to 31)
none
Upper 64th (sector 63)
Upper 32nd (sectors 62 and 63)
Upper 16th (sectors 60 and 63)
Upper 8th (sectors 56 to 63)
Upper 4th (sectors 48 to 63)
Upper half (sectors 32 to 63)
All sectors (sectors 0 to 63)
1. 0 0 0 = unprotected area (sectors): The device is ready to accept a BULK ERASE command
only if all block protect bits (BP2, BP1, BP0) are 0.
Note:
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Micron M25P32 Serial Flash Embedded Memory
Operating Features
Hold Condition
The HOLD# signal is used to pause any serial communications with the device without
resetting the clocking sequence. However, taking this signal LOW does not terminate
any WRITE STATUS REGISTER, PROGRAM, or ERASE cycle that is currently in progress.
To enter the hold condition, the device must be selected, with S# LOW. The hold condi-
tion starts on the falling edge of the HOLD# signal, if this coincides with serial clock (C)
being LOW. The hold condition ends on the rising edge of the HOLD# signal, if this co-
incides with C being LOW. If the falling edge does not coincide with C being LOW, the
hold condition starts after C next goes LOW. Similarly, if the rising edge does not coin-
cide with C being LOW, the hold condition ends after C next goes LOW.
During the hold condition, the serial data output (DQ1) is HIGH impedance, and serial
data input (DQ0) and C are Don’t Care. Normally, the device is kept selected, with S#
driven LOW for the whole duration of the hold condition. This ensures that the state of
the internal logic remains unchanged from the moment of entering the hold condition.
If S# goes HIGH while the device is in the hold condition, the internal logic of the device
is reset. To restart communication with the device, it is necessary to drive HOLD#
HIGH, and then to drive S# LOW. This prevents the device from going back to the hold
condition.
Figure 6: Hold Condition Activation
C
HOLD#
HOLD condition (standard use)
HOLD condition (nonstandard use)
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Micron M25P32 Serial Flash Embedded Memory
Configuration and Memory Map
Configuration and Memory Map
Memory Configuration and Block Diagram
Each page of memory can be individually programmed; bits are programmed from 1 to
0. The device is sector or bulk-erasable, but not page-erasable; bits are erased from 0 to
1. The memory is configured as follows:
• 4, 194,304 bytes (8 bits each)
• 64 sectors (512Kb, 65KB each)
• 16,384 pages (256 bytes each)
Figure 7: Block Diagram
HOLD#
W#/VPP
S#
High Voltage
Generator
Control Logic
64 OTP bytes
C
DQ0
DQ1
I/O Shift Register
Status
Register
Address Register
and Counter
256 Byte
Data Buffer
3FFFFFh
00000h
000FFh
256 bytes (page size)
X Decoder
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Micron M25P32 Serial Flash Embedded Memory
Memory Map – 32Mb Density
Memory Map – 32Mb Density
Table 4: Sectors 63:0
Address Range
Sector
Start
003F 0000
⋮
End
003F FFFF
⋮
63
⋮
48
47
⋮
0030 0000
002F 0000
⋮
0030 FFFF
002F FFFF
⋮
32
31
⋮
0020 0000
001F 0000
⋮
0020 FFFF
001F FFFF
⋮
16
15
⋮
0010 0000
000F 0000
⋮
0010 FFFF
000F FFFF
⋮
0
0000 0000
0000 FFFF
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Micron M25P32 Serial Flash Embedded Memory
Command Set Overview
Command Set Overview
All commands, addresses, and data are shifted in and out of the device, most significant
bit first.
Serial data inputs DQ0 and DQ1 are sampled on the first rising edge of serial clock (C)
after chip select (S#) is driven LOW. Then, the one-byte command code must be shifted
in to the device, most significant bit first, on DQ0 and DQ1, each bit being latched on
the rising edges of C.
Every command sequence starts with a one-byte command code. Depending on the
command, this command code might be followed by address or data bytes, by address
and data bytes, or by neither address or data bytes. For the following commands, the
shifted-in command sequence is followed by a data-out sequence. S# can be driven
HIGH after any bit of the data-out sequence is being shifted out.
• READ DATA BYTES (READ)
• READ DATA BYTES at HIGHER SPEED
• READ STATUS REGISTER
• READ IDENTIFICATION
• RELEASE from DEEP POWER-DOW
• READ ELECTRONIC SIGNATURE
For the following commands, S# must be driven HIGH exactly at a byte boundary. That
is, after an exact multiple of eight clock pulses following S# being driven LOW, S# must
be driven HIGH. Otherwise, the command is rejected and not executed.
• PAGE PROGRAM
• SECTOR ERASE
• BULK ERASE
• WRITE STATUS REGISTER
• WRITE ENABLE
• WRITE DISABLE
• DEEP POWER-DOWN
All attempts to access the memory array are ignored during a WRITE STATUS REGISTER
command cycle, a PROGRAM command cycle, or an ERASE command cycle. In addi-
tion, the internal cycle for each of these commands continues unaffected.
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Command Set Overview
Table 5: Command Set Codes
Bytes
One-Byte
Command Name
Command Code
Address
Dummy
Data
WRITE ENABLE
0000
0110
06h
04h
9Fh
9Eh
05h
01h
03h
0Bh
02h
D8h
C7h
B9h
ABh
ABh
0
0
0
WRITE DISABLE
0000
0100
0
0
0
0
0
3
3
3
3
0
0
0
0
0
0
0
0
0
0
1
0
0
0
0
0
3
0
1 to 20
1 to 3
1 to ∞
1
READ IDENTIFICATION
1001
1111
1001
1110
READ STATUS REGISTER
WRITE STATUS REGISTER
READ DATA BYTES
0000
0101
0000
0001
0000
0011
1 to ∞
1 to ∞
1 to 256
0
READ DATA BYTES at HIGHER SPEED
PAGE PROGRAM
0000
1011
0000
0010
SECTOR ERASE
1101
1000
BULK ERASE
1100
0111
0
DEEP POWER-DOWN
RELEASE from DEEP POWER-DOWN
1011
1001
0
1010
1011
0
READ ELECTRONIC SIGNATURE and
RELEASE from DEEP POWER-DOWN
1010
1011
1 to ∞
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Micron M25P32 Serial Flash Embedded Memory
WRITE ENABLE
WRITE ENABLE
The WRITE ENABLE command sets the write enable latch (WEL) bit.
The WEL bit must be set before execution of every PROGRAM, ERASE, and WRITE com-
mand.
The WRITE ENABLE command is entered by driving chip select (S#) LOW, sending the
command code, and then driving S# HIGH.
Figure 8: WRITE ENABLE Command Sequence
0
1
2
3
4
5
6
7
C
S#
Command Bits
LSB
DQ[0]
DQ1
0
0
0
0
0
1
1
0
MSB
High-Z
Don’t Care
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Micron M25P32 Serial Flash Embedded Memory
WRITE DISABLE
WRITE DISABLE
The WRITE DISABLE command resets the write enable latch (WEL) bit.
The WRITE DISABLE command is entered by driving chip select (S#) LOW, sending the
command code, and then driving S# HIGH.
The WEL bit is reset under the following conditions:
• Power-up
• Completion of any ERASE operation
• Completion of any PROGRAM operation
• Completion of any WRITE REGISTER operation
• Completion of WRITE DISABLE operation
Figure 9: WRITE DISABLE Command Sequence
0
1
2
3
4
5
6
7
C
S#
Command Bits
LSB
DQ[0]
DQ1
0
0
0
0
0
1
1
0
MSB
High-Z
Don’t Care
1. Shown here is the WRITE ENABLE command code, which is 06h or 0000 0110 binary. The
WRITE DISABLE command sequence is identical, except the WRITE DISABLE command
code is 04h or 0000 0100 binary.
Note:
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Micron M25P32 Serial Flash Embedded Memory
READ IDENTIFICATION
READ IDENTIFICATION
The READ IDENTIFICATION command reads the following device identification data:
• Manufacturer identification (1 byte): This is assigned by JEDEC.
• Device identification (2 bytes): This is assigned by device manufacturer; the first byte
indicates memory type and the second byte indicates device memory capacity.
• A Unique ID code (UID) (17 bytes,16 available upon customer request): The first byte
contains length of data to follow; the remaining 16 bytes contain optional Customized
Factory Data (CFD) content.
Table 6: READ IDENTIFICATION Data Out Sequence
Device Identification
UID
Manufacturer Identi-
fication
Memory Type
Memory Capacity
CFD Length
CFD Content
20h
20h
16h
10h
16 bytes
1. The CFD bytes are read-only and can be programmed with customer data upon demand.
If customers do not make requests, the devices are shipped with all the CFD bytes pro-
grammed to zero. See on page for CFD programmed devices.
Note:
A READ IDENTIFICATION command is not decoded while an ERASE or PROGRAM cy-
cle is in progress and has no effect on a cycle in progress. The READ IDENTIFICATION
command must not be issued while the device is in DEEP POWER-DOWN mode.
The device is first selected by driving chip select (S#) LOW. Then the 8-bit command
code is shifted in and content is shifted out on serial data output (DQ1) as follows: the
24-bit device identification that is stored in the memory, the 8-bit CFD length, followed
by 16 bytes of CFD content. Each bit is shifted out during the falling edge of serial clock
(C).
The READ IDENTIFICATION command is terminated by driving S# HIGH at any time
during data output. When S# is driven HIGH, the device is put in the STANDBY POWER
mode and waits to be selected so that it can receive, decode, and execute commands.
Figure 10: READ IDENTIFICATION Command Sequence
0
7
8
15
16
31
32
C
LSB
DQ0
Command
High-Z
MSB
LSB
LSB
LSB
DOUT
MSB
DOUT
DOUT
MSB
DOUT
DOUT
MSB
DOUT
DQ1
Manufacturer
identification
Device
identification
UID
Don’t Care
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Micron M25P32 Serial Flash Embedded Memory
READ STATUS REGISTER
READ STATUS REGISTER
The READ STATUS REGISTER command allows the status register to be read. The status
register may be read at any time, even while a PROGRAM, ERASE, or WRITE STATUS
REGISTER cycle is in progress. When one of these cycles is in progress, it is recommen-
ded to check the write in progress (WIP) bit before sending a new command to the de-
vice. It is also possible to read the status register continuously.
Figure 11: READ STATUS REGISTER Command Sequence
0
7
8
9
10
11
12
13
14
15
C
DQ0
DQ1
LSB
Command
High-Z
MSB
LSB
DOUT
MSB
DOUT
DOUT
DOUT
DOUT
DOUT
DOUT
DOUT
DOUT
Don’t Care
Figure 12: Status Register Format
b7
b0
WIP
BP2
BP1
BP0
WEL
0
0
SRWD
satus register write protect
block protect bits
write enable latch bit
write in progress bit
WIP Bit
WEL Bit
The WIP bit indicates whether the memory is busy with a WRITE STATUS REGISTER cy-
cle, a PROGRAM cycle, or an ERASE cycle. When the WIP bit is set to 1, a cycle is in pro-
gress; when the WIP bit is set to 0, a cycle is not in progress.
The write enable latch (WEL) bit indicates the status of the internal write enable latch.
When the WEL bit is set to 1, the internal write enable latch is set; when the WEL bit is
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Micron M25P32 Serial Flash Embedded Memory
READ STATUS REGISTER
set to 0, the internal write enable latch is reset and no WRITE STATUS REGISTER, PRO-
GRAM, or ERASE command is accepted.
BP2, BP1, BP0 Bits
The block protect (BP2, BP1, BP0) bits are non-volatile. They define the size of the area
to be software protected against PROGRAM and ERASE commands. The block protect
bits are written with the WRITE STATUS REGISTER command.
When one or more of the block protect (BP2, BP1, BP0) bits is set to 1, the relevant
memory area, as defined in the Protected Area Sizes table, becomes protected against
PAGE PROGRAM and SECTOR ERASE commands. The block protect (BP2, BP1, BP0)
bits can be written provided that the HARDWARE PROTECTED mode has not been set.
The BULK ERASE command is executed only if all block protect (BP2, BP1, BP0) bits are
0.
SRWD Bit
The SRWD bit is operated in conjunction with the write protect (W#/VPP) signal. When
the SRWD bit is set to 1 and W#/VPP is driven LOW, the device is put in the hardware
protected mode. In the hardware protected mode, the non-volatile bits of the status reg-
ister (SRWD, BP2, BP1, BP0) become read-only bits and the WRITE STATUS REGISTER
command is no longer accepted for execution.
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Micron M25P32 Serial Flash Embedded Memory
WRITE STATUS REGISTER
WRITE STATUS REGISTER
The WRITE STATUS REGISTER command allows new values to be written to the status
register. Before the WRITE STATUS REGISTER command can be accepted, a WRITE EN-
ABLE command must have been executed previously. After the WRITE ENABLE com-
mand has been decoded and executed, the device sets the write enable latch (WEL) bit.
The WRITE STATUS REGISTER command is entered by driving chip select (S#) LOW,
followed by the command code and the data byte on serial data input (DQ0). The
WRITE STATUS REGISTER command has no effect on b6, b1 and b0 of the status regis-
ter. The status register b6 is always read as ‘0’. S# must be driven HIGH after the eighth
bit of the data byte has been latched in. If not, the WRITE STATUS REGISTER command
is not executed.
Figure 13: WRITE STATUS REGISTER Command Sequence
0
7
8
9
10
11
12
13
14
15
C
LSB
LSB
D
D
D
D
D
D
D
D
D
IN
DQ0
Command
IN
IN
IN
IN
IN
IN
IN
IN
MSB
MSB
As soon as S# is driven HIGH, the self-timed WRITE STATUS REGISTER cycle is initi-
ated; its duration is tW. While the WRITE STATUS REGISTER cycle is in progress, the sta-
tus register may still be read to check the value of the write in progress (WIP) bit. The
WIP bit is 1 during the self-timed WRITE STATUS REGISTER cycle, and is 0 when the
cycle is completed. Also, when the cycle is completed, the WEL bit is reset.
The WRITE STATUS REGISTER command allows the user to change the values of the
block protect bits (BP2, BP1, BP0). Setting these bit values defines the size of the area
that is to be treated as read-only, as defined in on page .
The WRITE STATUS REGISTER command also allows the user to set and reset the status
register write disable (SRWD) bit in accordance with the write protect (W#/VPP) signal.
The SRWD bit and the W#/VPP signal allow the device to be put in the HARDWARE PRO-
TECED (HPM) mode. The WRITE STATUS REGISTER command is not executed once
the HPM is entered. The options for enabling the status register protection modes are
summarized here.
Table 7: Status Register Protection Modes
Memory Content
W/VPP
Signal
SRWD
Bit
Protection
Mode (PM)
Status Register
Write Protection
Protected
Unprotected
Area
Area
Notes
1, 2, 3
1
0
1
0
0
1
SOFTWARE
PROTECTED mode
(SPM)
Software protection
Commands not
accepted
Commands
accepted
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Micron M25P32 Serial Flash Embedded Memory
WRITE STATUS REGISTER
Table 7: Status Register Protection Modes (Continued)
Memory Content
W/VPP
Signal
SRWD
Bit
Protection
Mode (PM)
Status Register
Write Protection
Protected
Unprotected
Area
Area
Notes
0
1
HARDWARE
PROTECTED mode
(HPM)
Hardware protection
Commands not
accepted
Commands
accepted
3, 4, 5,
1. Software protection: status register is writable (SRWD, BP2, BP1, and BP0 bit values can
be changed) if the WRITE ENABLE command has set the WEL bit.
Notes:
2. PAGE PROGRAM, PROGRAM, SECTOR ERASE, AND BULK ERASE commands are not ac-
cepted.
3. PAGE PROGRAM and SECTOR ERASE commands can be accepted.
4. Hardware protection: status register is not writable (SRWD, BP2, BP1, and BP0 bit values
cannot be changed).
5. PAGE PROGRAM, SECTOR ERASE, AND BULK ERASE commands are not accepted.
When the SRWD bit of the status register is 0 (its initial delivery state), it is possible to
write to the status register provided that the WEL bit has been set previously by a WRITE
ENABLE command, regardless of whether the W#/VPP signal is driven HIGH or LOW.
When the status register SRWD bit is set to 1, two cases need to be considered depend-
ing on the state of the W#/VPP signal:
• If the W#/VPP signal is driven HIGH, it is possible to write to the status register provi-
ded that the WEL bit has been set previously by a WRITE ENABLE command.
• If the W#/VPP signal is driven LOW, it is not possible to write to the status register even
if the WEL bit has been set previously by a WRITE ENABLE command. Therefore, at-
tempts to write to the status register are rejected, and are not accepted for execution.
The result is that all the data bytes in the memory area that have been put in SPM by
the status register block protect bits (BP2, BP1, BP0) are also hardware protected
against data modification.
Regardless of the order of the two events, the HPM can be entered in either of the fol-
lowing ways:
• Setting the status register SRWD bit after driving the W#/VPP signal LOW
• Driving the W#/VPP signal LOW after setting the status register SRWD bit.
The only way to exit the HPM is to pull the W#/VPP signal HIGH. If the W#/VPP signal is
permanently tied HIGH, the HPM can never be activated. In this case, only the SPM is
available, using the status register block protect bits (BP2, BP1, BP0).
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Micron M25P32 Serial Flash Embedded Memory
READ DATA BYTES
READ DATA BYTES
The device is first selected by driving chip select (S#) LOW. The command code for
READ DATA BYTES is followed by a 3-byte address (A23-A0), each bit being latched-in
during the rising edge of serial clock (C). Then the memory contents at that address is
shifted out on serial data output (DQ1), each bit being shifted out at a maximum fre-
quency fR during the falling edge of C.
The first byte addressed can be at any location. The address is automatically incremen-
ted to the next higher address after each byte of data is shifted out. Therefore, the entire
memory can be read with a single READ DATA BYTES command. When the highest ad-
dress is reached, the address counter rolls over to 000000h, allowing the read sequence
to be continued indefinitely.
The READ DATA BYTES command is terminated by driving S# HIGH. S# can be driven
HIGH at any time during data output. Any READ DATA BYTES command issued while
an ERASE, PROGRAM, or WRITE cycle is in progress is rejected without any effect on
the cycle that is in progress.
Figure 14: READ DATA BYTES Command Sequence
0
7
8
Cx
C
LSB
A[MIN]
DQ[0]
DQ1
Command
High-Z
MSB
A[MAX]
LSB
DOUT DOUT
DOUT
MSB
DOUT
DOUT
DOUT
DOUT
DOUT
DOUT
Don’t Care
1. Cx = 7 + (A[MAX] + 1).
Note:
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Micron M25P32 Serial Flash Embedded Memory
READ DATA BYTES at HIGHER SPEED
READ DATA BYTES at HIGHER SPEED
The device is first selected by driving chip select (S#) LOW. The command code for the
READ DATA BYTES at HIGHER SPEED command is followed by a 3-byte address (A23-
A0) and a dummy byte, each bit being latched-in during the rising edge of serial clock
(C). Then the memory contents at that address are shifted out on serial data output
(DQ1) at a maximum frequency fC, during the falling edge of C.
The first byte addressed can be at any location. The address is automatically incremen-
ted to the next higher address after each byte of data is shifted out. Therefore, the entire
memory can be read with a single READ DATA BYTES at HIGHER SPEED command.
When the highest address is reached, the address counter rolls over to 000000h, allow-
ing the read sequence to be continued indefinitely.
The READ DATA BYTES at HIGHER SPEED command is terminated by driving S# HIGH.
S# can be driven HIGH at any time during data output. Any READ DATA BYTES at
HIGHER SPEED command issued while an ERASE, PROGRAM, or WRITE cycle is in
progress is rejected without any effect on the cycle that is in progress.
Figure 15: READ DATA BYTES at HIGHER SPEED Command Sequence
0
7
8
C
x
C
LSB
A[MIN]
DQ0
Command
MSB
A[MAX]
LSB
D
D
D
D
D
D
D
D
D
OUT
DQ1
High-Z
OUT
OUT
OUT
OUT
OUT
OUT
OUT
OUT
MSB
Dummy cycles
Don’t Care
1. Cx = 7 + (A[MAX] + 1).
Note:
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Micron M25P32 Serial Flash Embedded Memory
PAGE PROGRAM
PAGE PROGRAM
The PAGE PROGRAM command allows bytes in the memory to be programmed, which
means the bits are changed from 1 to 0. Before a PAGE PROGRAM command can be ac-
cepted a WRITE ENABLE command must be executed. After the WRITE ENABLE com-
mand has been decoded, the device sets the write enable latch (WEL) bit.
The PAGE PROGRAM command is entered by driving chip select (S#) LOW, followed by
the command code, three address bytes, and at least one data byte on serial data input
(DQ0).
If the eight least significant address bits (A7-A0) are not all zero, all transmitted data that
goes beyond the end of the current page are programmed from the start address of the
same page; that is, from the address whose eight least significant bits (A7-A0) are all
zero. S# must be driven LOW for the entire duration of the sequence.
If more than 256 bytes are sent to the device, previously latched data are discarded and
the last 256 data bytes are guaranteed to be programmed correctly within the same
page. If less than 256 data bytes are sent to device, they are correctly programmed at the
requested addresses without any effects on the other bytes of the same page.
For optimized timings, it is recommended to use the PAGE PROGRAM command to
program all consecutive targeted bytes in a single sequence rather than to use several
PAGE PROGRAM sequences, each containing only a few bytes.
S# must be driven HIGH after the eighth bit of the last data byte has been latched in.
Otherwise the PAGE PROGRAM command is not executed.
As soon as S# is driven HIGH, the self-timed PAGE PROGRAM cycle is initiated; the cy-
cles's duration is tPP. While the PAGE PROGRAM cycle is in progress, the status register
may be read to check the value of the write in progress (WIP) bit. The WIP bit is 1 during
the self-timed PAGE PROGRAM cycle, and 0 when the cycle is completed. At some un-
specified time before the cycle is completed, the write enable latch (WEL) bit is reset.
A PAGE PROGRAM command is not executed if it applies to a page protected by the
block protect bits BP2, BP1, and BP0.
Figure 16: PAGE PROGRAM Command Sequence
0
7
8
C
x
C
LSB
A[MIN]
LSB
D
D
D
D
D
D
D
D
D
IN
DQ[0]
Command
IN
IN
IN
IN
IN
IN
IN
IN
MSB
A[MAX]
MSB
1. Cx = 7 + (A[MAX] + 1).
Note:
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Micron M25P32 Serial Flash Embedded Memory
SECTOR ERASE
SECTOR ERASE
The SECTOR ERASE command sets to 1 (FFh) all bits inside the chosen sector. Before
the SECTOR ERASE command can be accepted, a WRITE ENABLE command must have
been executed previously. After the WRITE ENABLE command has been decoded, the
device sets the write enable latch (WEL) bit.
The SECTOR ERASE command is entered by driving chip select (S#) LOW, followed by
the command code, and three address bytes on serial data input (DQ0). Any address in-
side the sector is a valid address for the SECTOR ERASE command. S# must be driven
LOW for the entire duration of the sequence.
S# must be driven HIGH after the eighth bit of the last address byte has been latched in.
Otherwise the SECTOR ERASE command is not executed. As soon as S# is driven HIGH,
the self-timed SECTOR ERASE cycle is initiated; the cycle's duration is tSE. While the
SECTOR ERASE cycle is in progress, the status register may be read to check the value of
the write in progress (WIP) bit. The WIP bit is 1 during the self-timed SECTOR ERASE
cycle, and is 0 when the cycle is completed. At some unspecified time before the cycle is
completed, the WEL bit is reset.
A SECTOR ERASE command is not executed if it applies to a page that is protected by
the block protect bits BP2, BP1, and BP0.
Figure 17: SECTOR ERASE Command Sequence
0
7
8
C
x
C
LSB
A[MIN]
DQ0
Command
MSB
A[MAX]
1. Cx = 7 + (A[MAX] + 1).
Note:
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Micron M25P32 Serial Flash Embedded Memory
BULK ERASE
BULK ERASE
The BULK ERASE command sets all bits to 1 (FFh). Before the BULK ERASE command
can be accepted, a WRITE ENABLE command must have been executed previously. Af-
ter the WRITE ENABLE command has been decoded, the device sets the write enable
latch (WEL) bit.
The BULK ERASE command is entered by driving chip select (S#) LOW, followed by the
command code on serial data input (DQ0). S# must be driven LOW for the entire dura-
tion of the sequence.
S# must be driven HIGH after the eighth bit of the command code has been latched in.
Otherwise the BULK ERASE command is not executed. As soon as S# is driven HIGH,
the self-timed BULK ERASE cycle is initiated; the cycle's duration is tBE. While the BULK
ERASE cycle is in progress, the status register may be read to check the value of the write
In progress (WIP) bit. The WIP bit is 1 during the self-timed BULK ERASE cycle, and is 0
when the cycle is completed. At some unspecified time before the cycle is completed,
the WEL bit is reset.
The BULK ERASE command is executed only if all block protect (BP2, BP1, BP0) bits are
0. The BULK ERASE command is ignored if one or more sectors are protected.
Figure 18: BULK ERASE Command Sequence
0
7
C
LSB
DQ0
MSB
Command
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Micron M25P32 Serial Flash Embedded Memory
DEEP POWER-DOWN
DEEP POWER-DOWN
Executing the DEEP POWER-DOWN command is the only way to put the device in the
lowest power consumption mode, the DEEP POWER-DOWN mode. The DEEP POWER-
DOWN command can also be used as a software protection mechanism while the de-
vice is not in active use because in the DEEP POWER-DOWN mode the device ignores
all WRITE, PROGRAM, and ERASE commands.
Driving chip select (S#) HIGH deselects the device, and puts it in the STANDBY POWER
mode if there is no internal cycle currently in progress. Once in STANDBY POWER
mode, the DEEP POWER-DOWN mode can be entered by executing the DEEP POWER-
DOWN command, subsequently reducing the standby current from ICC1 to ICC2
.
To take the device out of DEEP POWER-DOWN mode, the RELEASE from DEEP POW-
ER-DOWN command must be issued. Other commands must not be issued while the
device is in DEEP POWER-DOWN mode. The DEEP POWER-DOWN mode stops auto-
matically at power-down. The device always powers up in STANDBY POWER mode.
The DEEP POWER-DOWN command is entered by driving S# LOW, followed by the
command code on serial data input (DQ0). S# must be driven LOW for the entire dura-
tion of the sequence.
S# must be driven HIGH after the eighth bit of the command code has been latched in.
Otherwise the DEEP POWER-DOWN command is not executed. As soon as S# is driven
HIGH, it requires a delay of tDP before the supply current is reduced to ICC2 and the
DEEP POWER-DOWN mode is entered.
Any DEEP POWER-DOWN command issued while an ERASE, PROGRAM, or WRITE cy-
cle is in progress is rejected without any effect on the cycle that is in progress.
Figure 19: DEEP POWER-DOWN Command Sequence
0
7
C
tDP
LSB
DQ0
Command
MSB
Standby Mode
Deep Power-Down Mode
Don’t Care
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Micron M25P32 Serial Flash Embedded Memory
RELEASE from DEEP POWER-DOWN
RELEASE from DEEP POWER-DOWN
Once the device has entered DEEP POWER-DOWN mode, all commands are ignored ex-
cept RELEASE from DEEP POWER-DOWN and READ ELECTRONIC SIGNATURE. Exe-
cuting either of these commands takes the device out of the DEEP POWER-DOWN
mode.
The RELEASE from DEEP POWER-DOWN command is entered by driving chip select
(S#) LOW, followed by the command code on serial data input (DQ0). S# must be driven
LOW for the entire duration of the sequence.
The RELEASE from DEEP POWER-DOWN command is terminated by driving S# high.
Sending additional clock cycles on serial clock C while S# is driven LOW causes the
command to be rejected and not executed.
After S# has been driven high, followed by a delay, tRES, the device is put in the STAND-
BY mode. S# must remain HIGH at least until this period is over. The device waits to be
selected so that it can receive, decode, and execute commands.
Any RELEASE from DEEP POWER-DOWN command issued while an ERASE, PRO-
GRAM, or WRITE cycle is in progress is rejected without any effect on the cycle that is in
progress.
Figure 20: RELEASE from DEEP POWER-DOWN Command Sequence
0
7
C
DQ0
DQ1
tRES1
LSB
Command
High-Z
MSB
Deep Power-Down Mode
Standby Mode
Don’t Care
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Micron M25P32 Serial Flash Embedded Memory
READ ELECTRONIC SIGNATURE
READ ELECTRONIC SIGNATURE
Once the device enters DEEP POWER-DOWN mode, all commands are ignored except
READ ELECTRONIC SIGNATURE and RELEASE from DEEP POWER-DOWN. Executing
either of these commands takes the device out of the DEEP POWER-DOWN mode.
The READ ELECTRONIC SIGNATURE command is entered by driving chip select (S#)
LOW, followed by the command code and three dummy bytes on serial data input
(DQ0) . Each bit is latched in on the rising edge of serial clock C. The 8-bit electronic
signature is shifted out on serial data output DQ1 on the falling edge of C; S# must be
driven LOW the entire duration of the sequence for the electronic signature to be read.
However, driving S# HIGH after the command code, but before the entire 8-bit electron-
ic signature has been output for the first time, still ensures that the device is put into
STANDBY mode.
Except while an ERASE, PROGRAM, or WRITE STATUS REGISTER cycle is in progress,
the READ ELECTRONIC SIGNATURE command provides access to the 8-bit electronic
signature of the device, and can be applied even if DEEP POWER-DOWN mode has not
been entered. The READ ELECTRONIC SIGNATURE command is not executed while an
ERASE, PROGRAM, or WRITE STATUS REGISTER cycle is in progress and has no effect
on the cycle in progress.
The READ ELECTRONIC SIGNATURE command is terminated by driving S# high after
the electronic signature has been read at least once. Sending additional clock cycles C
while S# is driven LOW causes the electronic signature to be output repeatedly.
If S# is driven HIGH, the device is put in STANDBY mode immediately unless it was pre-
viously in DEEP POWER-DOWN mode. If previously in DEEP POWER-DOWN mode, the
device transitions to STANDBY mode with delay as described here. Once in STANDBY
mode, the device waits to be selected so that it can receive, decode, and execute instruc-
tions.
• If S# is driven HIGH before the electronic signature is read, transition to STANDBY
mode is delayed by tRES1, as shown in the RELEASE from DEEP POWER-DOWN com-
mand sequence. S# must remain HIGH for at least tRES1(max).
• If S# is driven HIGH after the electronic signature is read, transition to STANDBY
mode is delayed by tRES2. S# must remain HIGH for at least tRES2(max).
Figure 21: READ ELECTRONIC SIGNATURE Command Sequence
0
7
8
C
x
C
tRES2
LSB
DQ0
Command
High-Z
MSB
Electronic Signature
LSB
D
D
D
D
D
D
D
D
DQ1
OUT
OUT
OUT
OUT
OUT
OUT
OUT
OUT
MSB
Dummy cycles
Deep Power-Down
Standby
Don’t Care
1. Cx = 7 + (A[MAX] + 1).
Note:
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Micron M25P32 Serial Flash Embedded Memory
Power-Up/Down and Supply Line Decoupling
Power-Up/Down and Supply Line Decoupling
At power-up and power-down, the device must not be selected; that is, chip select (S#)
must follow the voltage applied on VCC until VCC reaches the correct value:
• VCC(min) at power-up, and then for a further delay of tVSL
• VSS at power-down
A safe configuration is provided under the SPI modes heading, beginning with SPI
Modes (page 9).
To avoid data corruption and inadvertent write operations during power-up, a power-
on-reset (POR) circuit is included. The logic inside the device is held reset while VCC is
less than the POR threshold voltage, VWI – all operations are disabled, and the device
does not respond to any instruction. Moreover, the device ignores the following instruc-
tions until a time delay of tPUW has elapsed after the moment that VCC rises above the
VWI threshold:
• WRITE ENABLE,
• PAGE PROGRAM
• SECTOR ERASE
• BULK ERASE
• WRITE STATUS REGISTER
However, the correct operation of the device is not guaranteed if, by this time, VCC is still
below VCC(min). No WRITE STATUS REGISTER, PROGRAM, or ERASE instruction
should be sent until:
• tPUW after VCC has passed the VWI threshold
• tVSL after VCC has passed the VCC(min) level.
If the time, tVSL, has elapsed, after VCC rises above VCC(min), the device can be selected
for READ instructions even if the tPUW delay has not yet fully elapsed.
VPPH must be applied only when VCC is stable and in the VCCmin to VCCmax voltage
range.
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Micron M25P32 Serial Flash Embedded Memory
Power-Up/Down and Supply Line Decoupling
Figure 22: Power-Up Timing
V
CC
V
(max)
CC
PROGRAM, ERASE, and WRITE commands are rejected by the device
Chip selection not allowed
V
(min)
CC
tVSL
READ access allowed
Device fully
accessible
RESET state
of the
device
V
WI
tPUW
time
After power-up, the device is in the following state:
• Standby Power mode (not the Deep Power-down mode).
• Write enable latch (WEL) bit is reset.
• Write in progress (WIP) bit is reset.
• Lock registers are configured as: write lock bit, lock-down bit = 0,0
Normal precautions must be taken for supply line decoupling to stabilize the VCC sup-
ply. Each device in a system should have the VCC line decoupled by a suitable capacitor
close to the package pins; generally, this capacitor is of the order of 100 nF.
At power-down, when VCC drops from the operating voltage to below the POR threshold
voltage VWI, all operations are disabled and the device does not respond to any instruc-
tion.
Note: Designers need to be aware that if power-down occurs while a WRITE, PRO-
GRAM, OR ERASE cycle is in progress, some data corruption may result.
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Micron M25P32 Serial Flash Embedded Memory
Power-Up Timing and Write Inhibit Voltage Threshold Specifi-
cations
Power-Up Timing and Write Inhibit Voltage Threshold Specifications
Table 8: Power-Up Timing and VWI Threshold
Symbol
tVSL
Parameter
VCC(min) to S# LOW
Min
30
Max
–
Unit
μs
tPUW
Time delay to write instruction
Write Inhibit voltage
1.0
1.0
10
ms
V
VWI
2.1
1. Parameters are characterized only.
Note:
If the time, tVSL, has elapsed, after VCC rises above VCC(min), the device can be selected
for READ instructions even if the tPUW delay has not yet fully elapsed.
VPPH must be applied only when VCC is stable and in the VCCmin to VCCmax voltage
range.
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Micron M25P32 Serial Flash Embedded Memory
Maximum Ratings and Operating Conditions
Maximum Ratings and Operating Conditions
Caution: Stressing the device beyond the absolute maximum ratings may cause perma-
nent damage to the device. These are stress ratings only and operation of the device be-
yond any specification or condition in the operating sections of this datasheet is not
recommended. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
Table 9: Absolute Maximum Ratings
Symbol
TSTG
Parameter
Storage temperature
Min
–65
Max
150
Units Notes
°C
TLEAD
VIO
Lead temperature during soldering
Input and output voltage (with respect to ground)
Supply voltage
–
See note
VCC+0.6
4.0
°C
V
1
2
–0.6
–0.6
–0.2
–2000
VCC
V
VPP
FAST PROGRAM / ERASE voltage
10.0
V
VESD
Electrostatic discharge voltage (Human Body mod-
el)
2000
V
3
1. The TLEAD signal is compliant with JEDEC Std J-STD-020C (for small body, Sn-Pb or Pb as-
sembly), the Micron RoHS compliant 7191395 specification, and the European directive
on Restrictions on Hazardous Substances (RoHS) 2002/95/EU.
Notes:
2. The minimum voltage may reach the value of –2V for no more than 20ns during transi-
tions; the maximum may reach the value of VCC +2V for no more than 20ns during tran-
sitions.
3. The VESD signal: JEDEC Std JESD22-A114A (C1 = 100 pF, R1 = 1500 Ω, R2 = 500 Ω).
Table 10: Operating Conditions
Symbol
VCC
Parameter
Min
2.7
Typical
Max
3.6
Unit Notes
Supply voltage
–
–
V
V
VPPH
Supply voltage on W#/VPP pin for FAST PRO-
GRAM / ERASE
8.5
9.5
TA
TA
Ambient operating temperature (grade 6)
Ambient operating temperature (grade 3)
–40
–40
15
–
–
85
125
35
°C
°C
°C
1
2
TAVPP
Ambient operating temperature for FAST
PROGRAM / ERASE
25
1. Autograde 6 and standard parts (grade 6) are tested to 85 °C. Autograde 6 follows the
high reliability certified test flow.
Notes:
2. Autograde 3 is tested to 125 °C.
Table 11: Data Retention and Endurance
Symbol
Condition
Min
Max
Unit
Program/Erase Grade 6, grade 3, autograde 6
Cycles
100,000
–
Cycles per block
Data Retention at 55°C
20
–
Years
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Micron M25P32 Serial Flash Embedded Memory
Electrical Characteristics
Electrical Characteristics
Table 12: DC Current Specifications
Symbol Parameter
Test Conditons
Min
Max
±2
Units
µA
ILI
Input leakage current
–
–
–
–
–
–
ILO
Output leakage current
Standby current (grade 6)
Standby current (grade 3)
–
±2
µA
ICC1
ICC1
ICC2
S# = VCC, VIN = VSS or VCC
50
µA
100
10
µA
Deep power-down current (grade
6)
S# = VCC, VIN = VSS or VCC
µA
ICC2
ICC3
Deep power-down current (grade
3)
–
–
–
–
–
–
–
–
–
50
8
µA
mA
mA
mA
mA
mA
mA
mA
mA
Operating current (READ)
C = 0.1VCC / 0.9VCC at 75MHz, DQ1 =
open
C = 0.1VCC / 0.9VCC at 33MHz, DQ1 =
open
4
ICC4
ICC5
ICC6
ICC7
ICCPP
IPP
Operating current
(PAGE PROGRAM)
S# = VCC
15
15
15
15
20
20
Operating current
(WRITE STATUS REGISTER)
S# = VCC
Operating current
(SECTOR ERASE)
S# = VCC
Operating current
(BULK ERASE)
S# = VCC
Operating current
(FAST PROGRAM/ERASE)
S# = VCC, Vpp = VPPH
S# = VCC, Vpp = VPPH
Vpp operating current
(FAST PROGRAM/ERASE)
Table 13: DC Voltage Specifications
Symbol Parameter
Test Conditons
Min
Max
Units
VIL
VIH
Input LOW voltage
Input HIGH voltage
Output LOW voltage
Output HIGH voltage
–
–0.5
0.3VCC
V
V
V
V
–
0.7VCC VCC+0.4
VOL
VOH
IOL = 1.6mA
IOH = –100µA
–
0.4
–
VCC–0.2
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Micron M25P32 Serial Flash Embedded Memory
AC Characteristics
AC Characteristics
In the following AC specifications, output HIGH-Z is defined as the point where data
out is no longer driven; however, this is not applicable to the M25PX64 device.
Table 14: AC Measurement Conditions
Symbol
Parameter
Min
30
Max
30
Unit
pF
ns
V
CL
Load capacitance
Input rise and fall times
Input pulse voltages
–
5
0.2VCC
0.3VCC
VCC / 2
0.8VCC
0.7VCC
VCC / 2
Input timing reference voltages
Output timing reference voltages
V
V
Figure 23: AC Measurement I/O Waveform
Input levels
0.8VCC
Input and output
timing reference levels
0.7VCC
0.5VCC
0.3VCC
0.2VCC
Table 15: Capacitance
Symbol Parameter
Test condition
VOUT = 0 V
Min
Max
Unit
pF
Notes
COUT
CIN
Output capacitance (DQ1)
–
–
8
6
1
Input capacitance (other pins)
VIN = 0 V
pF
1. Values are sampled only, not 100% tested, at TA=25°C and a frequency of 25MHz.
Note:
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Micron M25P32 Serial Flash Embedded Memory
AC Characteristics
Table 16: AC Specifications (75MHz, Device Grade 3 and 6, VCC[min])=2.7V
Symbol
fC
Alt.
fC
Parameter
Min
D.C.
D.C.
6
Typ
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max
75
33
–
Unit
MHz
MHz
ns
Notes
Clock frequency for all commands (except READ)
Clock frequency for READ command
fR
–
tCH
tCLH Clock HIGH time
tCLL Clock LOW time
3
tCL
6
–
ns
3, 4
5, 6
5, 6
tCLCH
tCHCL
tSLCH
tCHSL
tDVCH
tCHDX
tCHSH
tSHCH
tSHSL
tSHQZ
tCLQV
tCLQX
tHLCH
tCHHH
tHHCH
tCHHL
tHHQX
tHLQZ
tWHSL
tSHWL
tVPPHSL
–
–
Clock rise time (peak to peak)
Clock fall time (peak to peak)
0.1
0.1
5
–
V/ns
V/ns
ns
–
tCSS S# active setup time (relative to C)
S# not active hold time (relative to C)
tDSU Data In setup time
–
5
–
ns
2
–
ns
tDH
–
Data In hold time
5
–
ns
S# active hold time (relative to C)
S# not active setup time (relative to C)
5
–
ns
–
5
–
ns
tCSH S# deselect time
100
–
–
ns
tDIS
tV
tHO
–
Output disable time
8
ns
5
Clock LOW to output valid
Output hold time
–
8
ns
0
–
ns
HOLD# setup time (relative to C)
HOLD# hold time (relative to C)
HOLD# setup time (relative to C)
HOLD# hold time (relative to C)
HOLD# to output LOW-Z
HOLD# to output HIGH-Z
WRITE PROTECT setup time
WRITE PROTECT hold time
5
–
ns
–
5
–
ns
–
5
–
ns
–
5
–
ns
tLZ
tHZ
–
–
8
ns
5
5
7
7
–
8
ns
20
100
200
–
ns
–
–
ns
–
Enhanced program supply voltage HIGH to chip select
LOW
–
ns
tDP
–
–
S# HIGH to DEEP POWER-DOWN mode
–
–
–
–
3
μs
μs
5
5
tRES1
S# HIGH to STANDBY without READ ELECTRONIC SIGNA-
TURE
30
tRES2
–
S# HIGH to STANDBY with READ ELECTRONIC SIGNATURE
–
–
30
μs
5
1. Applies to entire table: 110nm technology devices are identified by the process identifi-
Notes:
cation digit 4 in the device marking and the process letter B in the part number.
2. Applies to entire table: the AC specification values shown here are allowed only on the
VCC range 2.7V to 3.6V. The maximum frequency in the VCC range 2.3V to 2.7V is
40MHz.
3. The tCH and tCL signal values must be greater than or equal to 1/fC.
4. Typical values are given for TA = 25°C.
5. The tCLCH, tCHCL, tSHQZ, tHHQX, tHLQZ, tDP, and tRDP signal values are guaranteed by charac-
terization, not 100% tested in production.
6. The tCLCH and tCHCL signals clock rise and fall time values are expressed as a slew-rate.
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Micron M25P32 Serial Flash Embedded Memory
AC Characteristics
7. The tWHSL and tSHWL signal values are only applicable as a constraint for a WRITE STATUS
REGISTER command when SRWD bit is set at 1.
Table 17: Instruction Times, Process Technology 110nm
Symbol Parameter
Min
Typ
1.3
Max
15
Units
ms
Notes
tW
tPP
tPP
WRITE STATUS REGISTER cycle time
–
–
–
PAGE PROGRAM cycle time (256 bytes)
0.64
5
ms
on page
PAGE PROGRAM cycle time (n bytes)
int (n/8) x
0.02
tSE
tSE
tBE
tBE
SECTOR ERASE cycle time
–
–
–
–
0.6
0.6
23
3
3
s
s
s
s
SECTOR ERASE cycle time (VPP = VPPH
BULK ERASE cycle time
)
80
80
BULK ERASE cycle time (VPP = VPPH
)
13
1. Applies to the entire table: 110nm technology devices are identified by the process iden-
Notes:
tification digit 4 in the device marking and the process letter B in the part number.
2. When using the PAGE PROGRAM command to program consecutive bytes, optimized
timings are obtained in one sequence that includes all the bytes rather than in several
sequences of only a few bytes (1 < n < 256).
3. int(A) corresponds to the upper integer part of A. For example, int(12/8) = 2 and
int(32/8) = 4.
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Micron M25P32 Serial Flash Embedded Memory
AC Characteristics
Figure 24: Serial Input Timing
tSHSL
S#
tCHSL
tSLCH
tCHSH
tSHCH
C
tDVCH
tCHCL
tCHDX
tCLCH
DQ0
DQ1
MSB IN
LSB IN
high impedance
Figure 25: Write Protect Setup and Hold during WRSR when SRWD=1 Timing
W#/V
PP
tSHWL
tWHSL
S#
C
DQ0
high impedance
DQ1
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Micron M25P32 Serial Flash Embedded Memory
AC Characteristics
Figure 26: Hold Timing
S#
tHLCH
tHHCH
tCHHL
C
tCHHH
tHLQZ
tHHQX
DQ1
DQ0
HOLD#
Figure 27: Output Timing
S#
tCH
C
tCLQV
tCLQV
tCL
tSHQZ
tCLQX
tCLQX
LSB OUT
DQ1
DQ0
tQLQH
tQHQL
ADDRESS
LSB IN
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Micron M25P32 Serial Flash Embedded Memory
Package Information
Package Information
Figure 28: SO8W 208 mils Body Width
1.51 MIN/
2.00 MAX
2.50 MAX
0.10 MIN/
0.35 MAX
-0.05
+0.11
0.40
0.10 MAX
1.27 TYP
6.05 MAX
7.62 MIN/
8.89 MAX
8
5.02 MIN/
6.22 MAX
1
0.00 MIN/
0.25 MAX
0º MIN/
0.50 MIN/
0.80 MAX
10° MAX
1. Drawing is not to scale.
Note:
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Micron M25P32 Serial Flash Embedded Memory
Package Information
Figure 29: SO16W 300 mils Body Width
10.30 ±0.20
h x 45°
16
9
0.23 MIN/
0.32 MAX
10.00 MIN/
10.65 MAX
7.50 ±0.10
1
8
0° MIN/8° MAX
2.5 ±0.15
0.20 ±0.1
0.1
Z
0.33 MIN/
0.51 MAX
0.40 MIN/
1.27 MAX
1.27 TYP
Z
1. h = 0.25mm MIN, 0.75mm MAX
Note:
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Micron M25P32 Serial Flash Embedded Memory
Package Information
Figure 30: VFQFPN8 (MLP8) 6mm x 5mm
0.15 C A
6 TYP
A
0.10 MAX/
0 MIN
B
5.75 TYP
Pin one
indicator
4.75 TYP
5 TYP
+0.30
-0.20
1.27
TYP
4
2x
0.10 C B
+0.08
-0.05
0.40
3.40 ±0.20
0.10 C A
+0.15
-0.10
0.60
θ
12°
0.05
+0.15
-0.05
0.20 TYP
0.85
0.65 TYP
C
0 MIN/
0.05 MAX
1. Drawing is not to scale.
Note:
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Micron M25P32 Serial Flash Embedded Memory
Package Information
Figure 31: VFDFPN8 (MLP8) 8mm x 6mm
8.00 TYP
1.27 MIN
0.40
6.00 TYP
4.80 TYP
-0.05
+0.08
5.16 TYP
0.82 MIN
-0.05
+0.10
0.50
0.15 MAX
0.85 TYP
0.05
0.00 MIN/0.05 MAX
1. Drawing is not to scale.
Note:
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Micron M25P32 Serial Flash Embedded Memory
Device Ordering Information
Device Ordering Information
Standard Parts
For further information on line items not listed here or on any aspect of this device,
contact your nearest representative.
Table 18: Part Number Example
Part Number Category
Device
Type
Security
Features
Operating
Voltage
Device
Grade
Packing
Option
Plating
Technology
Density
Package
Lithography
M25P
32
–
V
MN
6
T
P
B
Table 19: Part Number Information Scheme
Part Number
Category
Category Details
M25P = Serial Flash memory for code storage
Notes
Device type
Density
32 = 32Mb (4Mb x 8)
Security features
– = no extra security
1
2
S = CFD programmed with UID
V = VCC = 2.7V to 3.6V
Operating voltage
Package
MW = SO8W (208 mils width)
MF = SO16W (300 mils width)
MP = VFDFPN8 6mm x 5mm (MLP8)
ME = VFDFPN8 8mm x 6mm (MLP8)
Device Grade
6 = Industrial temperature range: –40°C to 85°C. Device tested with standard test flow.
– = Standard packing
Packing Option
T = Tape and reel packing
Plating technology
Lithography
P or G = RoHS compliant
– = 110nm technology, Catania diffusion plant
B = 110nm technology, Fab 2 diffusion plant
1. Secure options are available upon customer request.
Notes:
2. Package is available only for products in the 110nm process technology.
Note: The category of second Level Interconnect is marked on the package and on the
inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings re-
lated to soldering conditions are also marked on the inner box label.
Automotive Parts
For further information on line items not listed here or on any aspect of this device,
contact your nearest representative.
PDF: 09005aef84566541
m25p32.pdf - Rev. M 9/11 EN
Micron Technology, Inc. reserves the right to change products or specifications without notice.
47
© 2011 Micron Technology, Inc. All rights reserved.
Micron M25P32 Serial Flash Embedded Memory
Device Ordering Information
Table 20: Part Number Example
Part Number Category
Device
Type Density Features
M25P 32
Security
Operating
Voltage
Device Packing
Package Grade Option Technology Lithography
MN
Plating
Automotive
Grade
–
V
3
T
P
B
A
Table 21: Part Number Information Scheme
Part Number
Category
Category Details
M25P = Serial Flash memory for code storage
Notes
Device type
Density
32 = 32Mb (4Mb x 8)
Security features
Operating voltage
Package
– = no extra security
V = VCC = 2.3V to 3.6V
MW = SO8W (208 mils width)
MF = SO16W (300 mils width)
Device Grade
6 = Industrial temperature range: –40°C to 85°C. Device tested with high reliability test
flow.
3 = Automotive temperature range: –40°C to 125°C. Device tested with high reliability
test flow.
1
Packing Option
– = Standard packing
T = Tape and reel packing
Plating technology
Lithography
P or G = RoHS compliant
2
1
B = 110nm technology, Fab 2 diffusion plant
Automotive Grade
A = Automotive: –40°C to 85°C part. Only with temperature grade 6. Device tested with
high reliability test flow.
– = Automotive: –40°C to 125°C.
1. Micron recommends the use of the automotive grade device in the automotive environ-
ment, autograde 6 and grade 3.
Notes:
2. Contact your Micron sales representative for available options.
PDF: 09005aef84566541
m25p32.pdf - Rev. M 9/11 EN
Micron Technology, Inc. reserves the right to change products or specifications without notice.
48
© 2011 Micron Technology, Inc. All rights reserved.
Micron M25P32 Serial Flash Embedded Memory
Revision History
Revision History
Rev. M – 09/2011
• Applied Micron brand.
Rev. 12.0 – 3/2010
• Changed vWI min and max to 1.0 and 2.1 V in Table: Power-up Timing and VWI
Threshold.
• Changed Icc3 (Operating Current READ) from 12 mA to 8 MA in Table: DC Character-
istics.
• Created Icc1, Grade 6 and Grade 3 and Icc2, Grade 6 and Grade 3 in Table: DC Charac-
teristics.
• Removed Page Program Cycle time (VPP = VPPH 256 Bytes) in Table: AC Characteris-
tics (T9HX Technology).
Rev. 11.0 – 10/2009
Rev. 10.0 – 2/2009
Rev. 9.0 – 12/2008
• Created separate order information for standard parts and automotive parts.
• Added a lithography note to Ordering Information.
• Revised SO8W and MLP8 connections graphic.
• Revised SO16 connections graphic heading
• Deleted MN = SO8N (150 mils width) from Ordering Information.
Rev. 8.0 – 11/2008
• Inserted automotive bullet to cover page.
• Added SO8 to SO8W and MLP8 connections figure.
• Added grade 3 and grade 6 information to Operating Conditions and Data Retention
and Endurance.
• Changed clock high and clock low times from “9” to “6” in Table: DC Characteristics.
• Added automotive information to Order Information.
Rev. 7.0 – 6/2007
• Revised Power-Up and Power-Down.
• Revised Read Identification command.
• Inserted UID and CFI content columns in Table: Read Identification Command Se-
quence.
• Revised data bytes for RDID command in Table: Command Set.
• Revised Q signal in Figure: Read Identification (RDID) Command Sequence.
• Revised test condition and maximum value for ICC3 in Table: DC Characteristics.
• Revised the maximum value for fC in Table: AC characteristics (T9HX technology).
PDF: 09005aef84566541
m25p32.pdf - Rev. M 9/11 EN
Micron Technology, Inc. reserves the right to change products or specifications without notice.
49
© 2011 Micron Technology, Inc. All rights reserved.
Micron M25P32 Serial Flash Embedded Memory
Revision History
Rev. 6.0 – 11/2006
• Added MLP8 and SO8W packages.
• Revised Figure: Bus Master and Memory Devices on SPI Bus.
• Revised Absolute Maximum Ratings section.
• Added T9HX products to AC Characteristics.
Rev. 5.0 – 2/2006
Rev. 4.0 – 01/2006
• Added VDFPN8 package.
• Fast Program/Erase mode added and power-up specified for Fast Program/Erase
mode in Power-up and Power-down section.
• W pin changed to W/VPP.
• tVPPHSL added to Table: AC Characteristics.
• Added Figure: VPPH Timing.
• Added RoHS compliant note to Order Information.
Rev. 3.0 – 8/2005
Rev. 2.0 – 4/2005
• Updated Page Program information.
• Clarified Read Identification, Deep Power-Down, Release from Deep Power-Down,
and Reach Electronic Signature commands.
Rev. 1.0 – 10/2004
• Initial data sheet release.
8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900
www.micron.com/productsupport Customer Comment Line: 800-932-4992
Micron and the Micron logo are trademarks of Micron Technology, Inc.
All other trademarks are the property of their respective owners.
This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein.
Although considered final, these specifications are subject to change, as further product development and data characterization some-
times occur.
PDF: 09005aef84566541
m25p32.pdf - Rev. M 9/11 EN
Micron Technology, Inc. reserves the right to change products or specifications without notice.
50
© 2011 Micron Technology, Inc. All rights reserved.
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