VN1206 [MICROCHIP]
N-Channel Enhancement-Mode Vertical DMOS FET;型号: | VN1206 |
厂家: | MICROCHIP |
描述: | N-Channel Enhancement-Mode Vertical DMOS FET |
文件: | 总12页 (文件大小:735K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
VN1206
N-Channel Enhancement-Mode Vertical DMOS FET
Features
General Description
• Free from Secondary Breakdown
• Low Power Drive Requirement
• Ease of Paralleling
The VN1206 Enhancement-mode (normally-off)
transistor uses a vertical DMOS structure and a
well-proven, silicon-gate manufacturing process. This
combination produces a device with the power
handling capabilities of bipolar transistors and the high
input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS
structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
• Low CISS and Fast Switching Speeds
• Excellent Thermal Stability
• Integral Source-Drain Diode
• High Input Impedance and High Gain
Applications
Microchip’s vertical DMOS FETs are ideally suited for a
wide range of switching and amplifying applications
where very low threshold voltage, high breakdown
voltage, high input impedance, low input capacitance,
and fast switching speeds are desired.
• Motor Controls
• Converters
• Amplifiers
• Switches
• Power Supply Circuits
• Drivers (Relays, Hammers, Solenoids, Lamps,
Memories, Displays, Bipolar Transistors, etc.)
Package Type
3-lead TO-92
(Top view)
DRAIN
SOURCE
GATE
See Table 2-1 for pin information.
2021 Microchip Technology Inc.
DS20005986A-page 1
VN1206
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings†
Drain-to-Source Voltage ...................................................................................................................................... BVDSS
Drain-to-Gate Voltage ......................................................................................................................................... BVDGS
Gate-to-Source Voltage ......................................................................................................................................... ±30V
Operating Ambient Temperature, TA ................................................................................................... –55°C to +150°C
Storage Temperature, TS ..................................................................................................................... –55°C to +150°C
† Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only, and functional operation of the device at those or any other conditions above those
indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for
extended periods may affect device reliability.
DC ELECTRICAL CHARACTERISTICS
Electrical Specifications: TA = 25°C unless otherwise specified. All DC parameters are 100% tested at 25°C unless
otherwise stated. Pulse test: 300 µs pulse, 2% duty cycle
Parameter
Sym.
Min. Typ. Max. Unit
Conditions
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
BVDSS
VGS(th)
IGSS
120
0.8
—
—
—
—
—
2
V
V
VGS = 0V, ID = 100 µA
VGS = VDS, ID = 1 mA
VGS = ±15V, VDS = 0V
VGS = 0V,
Gate Body Leakage Current
100
nA
—
—
10
µA
V
DS = Maximum rating
VDS = 0.8 Maximum rating,
GS = 0V, TA = 125°C
Zero-Gate Voltage Drain Current
IDSS
—
—
500
µA
V
(Note 1)
On-State Drain Current
ID(ON)
1
—
—
—
—
10
6
A
Ω
Ω
VGS = 10V, VDS = 10V
VGS = 2.5V, ID = 100 mA
VGS = 10V, ID = 500 mA
—
—
Static Drain-to-Source On-State Resistance
RDS(ON)
Note 1: Specification is obtained by characterization and is not 100% tested.
AC ELECTRICAL CHARACTERISTICS
Electrical Specifications: TA = 25°C unless otherwise specified. All AC Parameters are not 100% sample tested.
Parameter
Sym. Min. Typ. Max. Unit
Conditions
Forward Transconductance
Input Capacitance
GFS 300
—
—
—
—
—
—
—
—
—
125
50
20
8
mmho VDS = 10V, ID = 500 mA
pF
CISS
COSS
CRSS
td(ON)
tr
—
—
—
—
—
—
—
VGS = 0V,
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
pF
pF
ns
ns
ns
ns
V
DS = 25V,
f = 1 MHz
V
DD = 60V,
ID = 400 mA,
GEN = 25Ω
Rise Time
8
Turn-Off Delay Time
td(OFF)
tf
18
12
R
Fall Time
DIODE PARAMETER
Diode Forward Voltage Drop
VSD
—
1.2
—
V
VGS = 0V, ISD = 250 mA (Note 1)
Note 1: Unless otherwise stated, all DC parameters are 100% tested at 25°C. Pulse test: 300 µs pulse, 2% duty
cycle
DS20005986A-page 2
2021 Microchip Technology Inc.
VN1206
TEMPERATURE SPECIFICATIONS
Parameter
Sym. Min. Typ. Max. Unit
Conditions
TEMPERATURE RANGE
Operating Ambient Temperature
Storage Temperature
TA
TS
–55
–55
—
—
+150
+150
°C
°C
PACKAGE THERMAL RESISTANCE
3-lead TO-92
JA
—
132
—
°C/W
THERMAL CHARACTERISTICS
ID (Note 1)
(Continuous)
(mA)
ID
Power Dissipation
at TA = 25°C
(W)
IDR (Note 1)
(mA)
IDRM
(A)
Package
(Pulsed)
(A)
3-lead TO-92
230
2
1
230
2
Note 1: ID (continuous) is limited by maximum rated TJ.
2021 Microchip Technology Inc.
DS20005986A-page 3
VN1206
2.0
PIN DESCRIPTION
The details on the pins of VN1206 are listed in
Table 2-1. Refer to Package Type for the location of
pins.
TABLE 2-1:
Pin Number
TO-92 PIN FUNCTION TABLE
Pin Name
Description
1
2
3
Source
Gate
Source
Gate
Drain
Drain
DS20005986A-page 4
2021 Microchip Technology Inc.
VN1206
3.0
FUNCTIONAL DESCRIPTION
Figure 3-1 illustrates the switching waveforms and test
circuit for VN1206.
10V
VDD
90%
INPUT
Pulse
RL
10%
Generator
OUTPUT
0V
t(ON)
td(ON)
t(OFF)
td(OFF)
RGEN
tf
tr
VDD
OUTPUT
INPUT
D.U.T.
10%
10%
0V
90%
90%
FIGURE 3-1:
Switching Waveforms and Test Circuit.
TABLE 3-1:
PRODUCT SUMMARY
RDS(ON)
IDSS
(Minimum)
(A)
BVDSS/BVDGS
(Maximum)
(Ω)
(V)
120
6
1
2021 Microchip Technology Inc.
DS20005986A-page 5
VN1206
4.0
4.1
PACKAGING INFORMATION
Package Marking Information
Example
VN1206
3-lead TO-92
XXXXXX
e3
e
3
X
L
YWWNNN
111084
Legend: XX...X Product Code or Customer-specific information
Y
Year code (last digit of calendar year)
YY
WW
NNN
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC® designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator (
can be found on the outer packaging for this package.
e
3
*
)
3
e
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for product code or customer-specific information. Package may or
not include the corporate logo.
DS20005986A-page 6
2021 Microchip Technology Inc.
VN1206
Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging.
2021 Microchip Technology Inc.
DS20005986A-page 7
VN1206
NOTES:
DS20005986A-page 8
2021 Microchip Technology Inc.
VN1206
APPENDIX A: REVISION HISTORY
Revision A (May 2021)
• Converted Supertex Doc# DSFP-VN1206 to
Microchip DS20005986A
• Added a pin function table
• Changed the package marking format
• Removed the 3-Lead TO-92 L P003, P005, P013,
and P014 media types to align packaging
specifications with the actual BQM
• Made minor text changes throughout the
document
2021 Microchip Technology Inc.
DS20005986A-page 9
VN1206
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, contact your local Microchip representative or sales office.
Examples:
XX
PART NO.
Device
-
X
-
X
Package
Options
Environmental
Media Type
a) VN1206L-G:
N-Channel Enhancement-
Mode, Vertical DMOS FET,
3-lead TO-92, 1000/Bag
b) VN1206L-G-P002:
N-Channel Enhancement-
Mode, Vertical DMOS FET,
3-lead TO-92, 2000RVT/Reel
Device:
VN1206
=
N-Channel Enhancement-Mode Vertical
DMOS FET
Package:
L
=
=
3-lead TO-92
Environmental:
Media Types:
G
Lead (Pb)-free/RoHS-compliant Package
(blank)
P002
=
=
1000/Bag for an L Package
2000RVT/Reel for an L Package
DS20005986A-page 10
2021 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
•
•
Microchip products meet the specifications contained in their particular Microchip Data Sheet.
Microchip believes that its family of products is secure when used in the intended manner and under normal conditions.
There are dishonest and possibly illegal methods being used in attempts to breach the code protection features of the Microchip
devices. We believe that these methods require using the Microchip products in a manner outside the operating specifications
contained in Microchip's Data Sheets. Attempts to breach these code protection features, most likely, cannot be accomplished
without violating Microchip's intellectual property rights.
•
•
Microchip is willing to work with any customer who is concerned about the integrity of its code.
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of its code. Code protection does not
mean that we are guaranteeing the product is "unbreakable." Code protection is constantly evolving. We at Microchip are
committed to continuously improving the code protection features of our products. Attempts to break Microchip's code protection
feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or
other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication is provided for the sole
purpose of designing with and using Microchip products. Infor-
mation regarding device applications and the like is provided
only for your convenience and may be superseded by updates.
It is your responsibility to ensure that your application meets
with your specifications.
Trademarks
The Microchip name and logo, the Microchip logo, Adaptec,
AnyRate, AVR, AVR logo, AVR Freaks, BesTime, BitCloud, chipKIT,
chipKIT logo, CryptoMemory, CryptoRF, dsPIC, FlashFlex,
flexPWR, HELDO, IGLOO, JukeBlox, KeeLoq, Kleer, LANCheck,
LinkMD, maXStylus, maXTouch, MediaLB, megaAVR, Microsemi,
Microsemi logo, MOST, MOST logo, MPLAB, OptoLyzer,
PackeTime, PIC, picoPower, PICSTART, PIC32 logo, PolarFire,
Prochip Designer, QTouch, SAM-BA, SenGenuity, SpyNIC, SST,
SST Logo, SuperFlash, Symmetricom, SyncServer, Tachyon,
TimeSource, tinyAVR, UNI/O, Vectron, and XMEGA are registered
trademarks of Microchip Technology Incorporated in the U.S.A. and
other countries.
THIS INFORMATION IS PROVIDED BY MICROCHIP "AS IS".
MICROCHIP MAKES NO REPRESENTATIONS OR WAR-
RANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED,
WRITTEN OR ORAL, STATUTORY OR OTHERWISE,
RELATED TO THE INFORMATION INCLUDING BUT NOT
LIMITED TO ANY IMPLIED WARRANTIES OF NON-
INFRINGEMENT, MERCHANTABILITY, AND FITNESS FOR A
PARTICULAR PURPOSE OR WARRANTIES RELATED TO
ITS CONDITION, QUALITY, OR PERFORMANCE.
AgileSwitch, APT, ClockWorks, The Embedded Control Solutions
Company, EtherSynch, FlashTec, Hyper Speed Control, HyperLight
Load, IntelliMOS, Libero, motorBench, mTouch, Powermite 3,
Precision Edge, ProASIC, ProASIC Plus, ProASIC Plus logo, Quiet-
Wire, SmartFusion, SyncWorld, Temux, TimeCesium, TimeHub,
TimePictra, TimeProvider, WinPath, and ZL are registered
trademarks of Microchip Technology Incorporated in the U.S.A.
IN NO EVENT WILL MICROCHIP BE LIABLE FOR ANY INDI-
RECT, SPECIAL, PUNITIVE, INCIDENTALOR CONSEQUEN-
TIAL LOSS, DAMAGE, COST OR EXPENSE OF ANY KIND
WHATSOEVER RELATED TO THE INFORMATION OR ITS
USE, HOWEVER CAUSED, EVEN IF MICROCHIP HAS
BEEN ADVISED OF THE POSSIBILITY OR THE DAMAGES
ARE FORESEEABLE. TO THE FULLEST EXTENT
ALLOWED BY LAW, MICROCHIP'S TOTAL LIABILITY ON
ALL CLAIMS IN ANY WAY RELATED TO THE INFORMATION
OR ITS USE WILL NOT EXCEED THE AMOUNT OF FEES, IF
ANY, THAT YOU HAVE PAID DIRECTLY TO MICROCHIP
FOR THE INFORMATION. Use of Microchip devices in life sup-
port and/or safety applications is entirely at the buyer's risk, and
the buyer agrees to defend, indemnify and hold harmless
Microchip from any and all damages, claims, suits, or expenses
resulting from such use. No licenses are conveyed, implicitly or
otherwise, under any Microchip intellectual property rights
unless otherwise stated.
Adjacent Key Suppression, AKS, Analog-for-the-Digital Age, Any
Capacitor, AnyIn, AnyOut, Augmented Switching, BlueSky,
BodyCom, CodeGuard, CryptoAuthentication, CryptoAutomotive,
CryptoCompanion, CryptoController, dsPICDEM, dsPICDEM.net,
Dynamic Average Matching, DAM, ECAN, Espresso T1S,
EtherGREEN, IdealBridge, In-Circuit Serial Programming, ICSP,
INICnet, Intelligent Paralleling, Inter-Chip Connectivity,
JitterBlocker, maxCrypto, maxView, memBrain, Mindi, MiWi,
MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, MultiTRAK,
NetDetach, Omniscient Code Generation, PICDEM, PICDEM.net,
PICkit, PICtail, PowerSmart, PureSilicon, QMatrix, REAL ICE,
Ripple Blocker, RTAX, RTG4, SAM-ICE, Serial Quad I/O,
simpleMAP, SimpliPHY, SmartBuffer, SMART-I.S., storClad, SQI,
SuperSwitcher, SuperSwitcher II, Switchtec, SynchroPHY, Total
Endurance, TSHARC, USBCheck, VariSense, VectorBlox, VeriPHY,
ViewSpan, WiperLock, XpressConnect, and ZENA are trademarks
of Microchip Technology Incorporated in the U.S.A. and other
countries.
SQTP is a service mark of Microchip Technology Incorporated in
the U.S.A.
The Adaptec logo, Frequency on Demand, Silicon Storage
Technology, and Symmcom are registered trademarks of Microchip
Technology Inc. in other countries.
GestIC is a registered trademark of Microchip Technology Germany
II GmbH & Co. KG, a subsidiary of Microchip Technology Inc., in
other countries.
All other trademarks mentioned herein are property of their
respective companies.
© 2021, Microchip Technology Incorporated, All Rights Reserved.
ISBN: 978-1-5224-8283-3
For information regarding Microchip’s Quality Management Systems,
please visit www.microchip.com/quality.
2021 Microchip Technology Inc.
DS20005986A-page 11
Worldwide Sales and Service
AMERICAS
ASIA/PACIFIC
ASIA/PACIFIC
EUROPE
Corporate Office
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200
Fax: 480-792-7277
Technical Support:
http://www.microchip.com/
support
Australia - Sydney
Tel: 61-2-9868-6733
India - Bangalore
Tel: 91-80-3090-4444
Austria - Wels
Tel: 43-7242-2244-39
Fax: 43-7242-2244-393
China - Beijing
Tel: 86-10-8569-7000
India - New Delhi
Tel: 91-11-4160-8631
Denmark - Copenhagen
Tel: 45-4485-5910
Fax: 45-4485-2829
China - Chengdu
Tel: 86-28-8665-5511
India - Pune
Tel: 91-20-4121-0141
Finland - Espoo
Tel: 358-9-4520-820
China - Chongqing
Tel: 86-23-8980-9588
Japan - Osaka
Tel: 81-6-6152-7160
Web Address:
www.microchip.com
France - Paris
Tel: 33-1-69-53-63-20
Fax: 33-1-69-30-90-79
China - Dongguan
Tel: 86-769-8702-9880
Japan - Tokyo
Tel: 81-3-6880- 3770
Atlanta
Duluth, GA
Tel: 678-957-9614
Fax: 678-957-1455
China - Guangzhou
Tel: 86-20-8755-8029
Korea - Daegu
Tel: 82-53-744-4301
Germany - Garching
Tel: 49-8931-9700
China - Hangzhou
Tel: 86-571-8792-8115
Korea - Seoul
Tel: 82-2-554-7200
Germany - Haan
Tel: 49-2129-3766400
Austin, TX
Tel: 512-257-3370
China - Hong Kong SAR
Tel: 852-2943-5100
Malaysia - Kuala Lumpur
Tel: 60-3-7651-7906
Germany - Heilbronn
Tel: 49-7131-72400
Boston
Westborough, MA
Tel: 774-760-0087
Fax: 774-760-0088
China - Nanjing
Tel: 86-25-8473-2460
Malaysia - Penang
Tel: 60-4-227-8870
Germany - Karlsruhe
Tel: 49-721-625370
China - Qingdao
Philippines - Manila
Germany - Munich
Tel: 49-89-627-144-0
Fax: 49-89-627-144-44
Tel: 86-532-8502-7355
Tel: 63-2-634-9065
Chicago
Itasca, IL
Tel: 630-285-0071
Fax: 630-285-0075
China - Shanghai
Tel: 86-21-3326-8000
Singapore
Tel: 65-6334-8870
Germany - Rosenheim
Tel: 49-8031-354-560
China - Shenyang
Tel: 86-24-2334-2829
Taiwan - Hsin Chu
Tel: 886-3-577-8366
Dallas
Addison, TX
Tel: 972-818-7423
Fax: 972-818-2924
Israel - Ra’anana
Tel: 972-9-744-7705
China - Shenzhen
Tel: 86-755-8864-2200
Taiwan - Kaohsiung
Tel: 886-7-213-7830
Italy - Milan
Tel: 39-0331-742611
Fax: 39-0331-466781
China - Suzhou
Tel: 86-186-6233-1526
Taiwan - Taipei
Tel: 886-2-2508-8600
Detroit
Novi, MI
Tel: 248-848-4000
China - Wuhan
Tel: 86-27-5980-5300
Thailand - Bangkok
Tel: 66-2-694-1351
Italy - Padova
Tel: 39-049-7625286
Houston, TX
Tel: 281-894-5983
China - Xian
Tel: 86-29-8833-7252
Vietnam - Ho Chi Minh
Tel: 84-28-5448-2100
Netherlands - Drunen
Tel: 31-416-690399
Fax: 31-416-690340
Indianapolis
Noblesville, IN
Tel: 317-773-8323
Fax: 317-773-5453
Tel: 317-536-2380
China - Xiamen
Tel: 86-592-2388138
Norway - Trondheim
Tel: 47-7288-4388
China - Zhuhai
Tel: 86-756-3210040
Poland - Warsaw
Tel: 48-22-3325737
Los Angeles
Mission Viejo, CA
Tel: 949-462-9523
Fax: 949-462-9608
Tel: 951-273-7800
Romania - Bucharest
Tel: 40-21-407-87-50
Spain - Madrid
Tel: 34-91-708-08-90
Fax: 34-91-708-08-91
Raleigh, NC
Tel: 919-844-7510
Sweden - Gothenberg
Tel: 46-31-704-60-40
New York, NY
Tel: 631-435-6000
Sweden - Stockholm
Tel: 46-8-5090-4654
San Jose, CA
Tel: 408-735-9110
Tel: 408-436-4270
UK - Wokingham
Tel: 44-118-921-5800
Fax: 44-118-921-5820
Canada - Toronto
Tel: 905-695-1980
Fax: 905-695-2078
DS20005986A-page 12
2021 Microchip Technology Inc.
02/28/20
相关型号:
VN1206L-18
Small Signal Field-Effect Transistor, 0.23A I(D), 120V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA
VISHAY
VN1206L-1TR1
Small Signal Field-Effect Transistor, 0.23A I(D), 120V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA
VISHAY
VN1206L-2TA
Small Signal Field-Effect Transistor, 0.23A I(D), 120V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA
VISHAY
VN1206L-2TR1
Small Signal Field-Effect Transistor, 0.23A I(D), 120V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA
VISHAY
©2020 ICPDF网 联系我们和版权申明