TCM680EPA [MICROCHIP]
SWITCHED CAPACITOR CONVERTER, 8 kHz SWITCHING FREQ-MAX, PDIP8, PLASTIC, DIP-8;
| 型号： | TCM680EPA |
| 厂家： | 
MICROCHIP |
| 描述： | SWITCHED CAPACITOR CONVERTER, 8 kHz SWITCHING FREQ-MAX, PDIP8, PLASTIC, DIP-8 开关 光电二极管 |
| 文件： | 总18页 (文件大小：389K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TCM680
M
+5V To ±10V Voltage Converter
Features
General Description
• 99% Voltage Conversion Efficiency
• 85% Power Conversion Efficiency
• Input Voltage Range:
- +2.0V to +5.5V
• Only 4 External Capacitors Required
• 8-Pin SOIC Package
The TCM680 is a dual charge pump, voltage converter
that produces output voltages of +2V and -2V from
IN
IN
a single input voltage of +2.0V to +5.5V. Common
applications include ±10V from a single +5V logic
supply and ±6V from a +3V lithium battery.
The TCM680 is packaged in 8-pin SOIC and PDIP
packages and requires only four inexpensive, external
capacitors. The charge pumps are clocked by an on-
board 8 kHz oscillator. Low output source impedances
(typically 140 Ω) provide maximum output currents of
10 mA for each output. Typical power conversion effi-
ciency is 85%.
High efficiency, small size and low cost make the
TCM680 suitable for a wide variety of applications that
need both positive and negative power supplies
derived from a single input voltage.
Applications
• ±10V From +5V Logic Supply
• ±6V From a 3V Lithium Cell
• Handheld Instruments
• Portable Cellular Phones
• LCD Display Bias Generator
• Panel Meters
• Operational Amplifier Power Supplies
Package Type
Typical Operating Circuit
PDIP
+5V
-
+
C1
1
2
3
4
8
7
6
5
VOUT
C4
4.7 µF
+
+
VIN
VOUT
+
+
+
C2
C1
C1
TCM680CPA
TCM680EPA
+
C1
4.7 µF
VOUT+ = (2 x VIN
)
+
-
VIN
C2
-
C1
C2
-
TCM680
VOUT
GND
+
+
C2
VOUT- = -(2 x VIN
C3
)
-
VOUT
GND
4.7 µF
-
C2
SOIC
4.7 µF
-
+
C1
1
8
VOUT
GND
GND
+
+
C2
2
3
7
6
C1
TCM680COA
TCM680EOA
-
VIN
C2
-
VOUT
4
5
GND
2002 Microchip Technology Inc.
DS21486B-page 1
TCM680
† Notice: Stresses above those listed under "Maxi-
mum Ratings" may cause permanent damage to the
device. This is a stress rating only and functional oper-
ation of the device at those or any other conditions
above those indicated in the operation listings of this
specification is not implied. Exposure to maximum rat-
ing conditions for extended periods may affect device
reliability
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings†
V
V
V
V
V
V
.......................................................................+5.8V
IN
+
................................................................ +11.6V
.................................................................-11.6V
Short-Circuit Duration......................Continuous
Current ....................................................75 mA
OUT
OUT
OUT
OUT
–
+
+
dV/dT ....................................................... 1 V/µsec
IN
Power Dissipation (T ≤ 70°C)
A
8-Pin PDIP ..............................................730 mW
8-Pin SOIC ..............................................470 mW
Operating Temperature Range.............-40°C to +85°C
Storage Temperature Range..............-65°C to +150°C
Maximum Junction Temperature ......................+150°C
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, V = +5V, T = +25°C, refer to Figure 1-1.
IN
A
Parameters
Sym
Min
Typ
Max
Units
Conditions
-40°C ≤ T ≤ +85°C, R = 2 kΩ
Supply Voltage Range
Supply Current
V
2.0
—
—
—
—
—
—
—
0.5
1.0
—
—
140
180
—
—
—
140
180
5.5
1.0
2.0
2.5
3.0
180
250
220
250
—
180
250
V
mA
IN
A
L
I
V
V
V
V
= 3V, R = ∞
IN
IN
IN
IN
L
= 5V, R = ∞
L
= 5V, 0°C ≤ T ≤ +70°C, R = ∞
A
L
= 5V, -40°C ≤ T ≤ +85°C, R = ∞
IN
–
A L
-
+
Negative Charge Pump Output
Source Resistance
R
Ω
Ω
I
I
= 10 mA, I = 0 mA, V = 5V
OUT
L
L
+
IN
–
= 5 mA, I = 0 mA, V = 2.8V
L
L
IN
—
—
—
0°C ≤ T ≤ + 70°C
A
-40°C ≤ T ≤ + 85°C
A
–
+
+
+
I
I
I
= 10 mA, I = 0 mA, V = 5V
L
L
L
L IN
+
–
Positive Charge Pump Output
Source Resistance
R
= 10 mA, I = 0 mA, V = 5V
L IN
= 5 mA, I = 0 mA, V = 2.8V
OUT
–
—
L IN
—
—
—
—
—
—
220
250
—
0°C ≤ T ≤ + 70°C
A
-40°C ≤ T ≤ + 85°C
A
+
–
I
= 10 mA, I = 0 mA, V = 5V
L IN
L
Oscillator Frequency
Power Efficiency
Voltage Conversion Efficiency
F
P
—
—
97
97
21
85
99
99
—
—
—
—
kHz
%
%
OSC
R = 2 kΩ
EFF
L
+
V
V
V
, R = ∞
OUTEFF
OUT
OUT
L
–
, R = ∞
L
DS21486B-page 2
2002 Microchip Technology Inc.
TCM680
V
IN
+
C
4.7 µF
4.7 µF
1
+
8
+
1
2
-
V
V
C
C
OUT
OUT
1
+
+ 7
6
+
+
C
C
4
2
1
+
+
10 µF
RL
C
2
TCM680
-
3
4
V
C
IN
2
5
-
V
GND
GND
OUT
C
10 µF
3
-
R
L
-
V
OUT
FIGURE 1-1:
Test Circuit Used For DC Characteristics Table.
2002 Microchip Technology Inc.
DS21486B-page 3
TCM680
2.0
TYPICAL PERFORMANCE CURVES
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, V = +5V, T = +25°C.
IN
A
300
10.0
9.0
C
= C = 10 µF
4
1
250
200
8.0
7.0
150
100
R
OUT
4
5
6
3
2
1
15
0
5
10
V
(V)
IN
Load Current (mA)
+
-
FIGURE 2-1:
Output Resistance vs. V .
FIGURE 2-4:
V
or V
vs. Load
OUT
IN
OUT
Current.
1.4
1.2
1.0
10.0
9.0
0.8
0.6
0.4
R
= ∞
L
8.0
0.2
1
7.0
0
4
5
6
3
6
8
10
2
4
2
+
–
V
(V)
Output Current (mA) From V
OUT
To V
OUT
IN
FIGURE 2-2:
Supply Current vs. V .
IN
FIGURE 2-5:
Output Voltage vs. Output
Current.
180
I
OUT
= 10 mA
160
140
R
OUT
120
100
-50
0
50
100
Temperature (˚C)
FIGURE 2-3:
Output Source Resistance
vs. Temperature.
DS21486B-page 4
2002 Microchip Technology Inc.
TCM680
-
3.4
Negative Output Voltage (V
)
3.0
PIN DESCRIPTION
OUT
Negative connection for the negative charge pump out-
put capacitor. The negative charge pump output capac-
itor supplies the output load during the first, third and
fourth phases of the switching cycle. During the second
phase of the switching cycle, charge is restored to the
negative charge pump output capacitor. The negative
output voltage magnitude is approximately twice the
input voltage.
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
Pin No.
PIN FUNCTION TABLE
(8-Pin PDIP, Symbol
SOIC)
Description
-
1
2
3
4
C
Input. First charge pump
capacitor. Negative
connection
Input. Second charge pump
capacitor. Positive
connection.
Input. Second charge pump
capacitor. Negative
connection.
1
It is recommended that a low ESR (equivalent series
resistance) capacitor be used. Additionally, larger
values will lower the output ripple.
+
C
2
3.5
Ground (GND)
-
C
2
Input zero volt reference.
3.6
Power Supply Input (V )
IN
-
V
Output. Negative Output
OUT
Positive power supply input voltage connection. It is
recommended that a low ESR (equivalent series resis-
tance) capacitor be used to bypass the power supply
input to ground (GND).
voltage
5
6
7
GND
Input. Ground connection.
Input. Power supply.
Input. First charge pump
capacitor. Positive
connection.
V
C
IN
+
1
+
3.7
First Charge Pump Capacitor (C )
1
Positive connection for the charge pump capacitor (fly-
ing capacitor) used to transfer charge from the input
source to a second charge pump capacitor. Proper
orientation is imperative when using a polarized
capacitor.
+
8
V
Output. Positive Output
Voltage.
OUT
-
3.1
First Charge Pump Capacitor (C )
1
+
Negative connection for the charge pump capacitor
(flying capacitor) used to transfer charge from the input
source to a second charge pump capacitor. This
charge pump capacitor is used to double the input volt-
age and store the charge in the second charge pump
capacitor.
It is recommended that a low ESR (equivalent series
resistance) capacitor be used. Additionally, larger
values will lower the output resistance.
3.8
Positive Output Voltage (V
)
OUT
Positive connection for the positive charge pump out-
put capacitor. The positive charge pump output capac-
itor supplies the output load during the first, second and
third phases of the switching cycle. During the fourth
phase of the switching cycle, charge is restored to the
positive charge pump output capacitor. The positive
output voltage magnitude is approximately twice the
input voltage.
It is recommended that a low ESR (equivalent series
resistance) capacitor be used. Additionally, larger
values will lower the output ripple.
3.2
Second Charge Pump Capacitor
+
(C )
2
Positive connection for the second charge pump
capacitor (flying capacitor) used to transfer charge from
the first charge pump capacitor to the output.
It is recommended that a low ESR (equivalent series
resistance) capacitor be used. Additionally, larger
values will lower the output resistance.
3.3
Second Charge Pump Capacitor
-
(C )
2
Negative connection for the second charge pump
capacitor (flying capacitor) used to transfer charge from
the first charge pump capacitor to the output. Proper
orientation is imperative when using a polarized
capacitor.
2002 Microchip Technology Inc.
DS21486B-page 5
TCM680
+
4.3
V
Charge Storage - Phase 3
OUT
4.0
DETAILED DESCRIPTION
The third phase of the clock is identical to the first
-
4.1
V
Charge Storage - Phase 1
OUT
phase – the charge stored in C produces -5V in the
1
negative terminal of C , which is applied to the negative
The positive side of capacitors C and C are con-
1
1
2
1
+
+
side of capacitor C . Since C is at +5V, the voltage
nected to +5V at the start of this phase. C is then
2
2
–
potential across C is 10V.
switched to ground and the charge in C is transferred
2
1
–
+
to C . Since C is connected to +5V, the voltage
2
2
potential across capacitor C is now 10V.
VIN = +5V
2
–
C4
V
IN = +5V
+
+
-
VOUT
–
SW1
C1
SW3
C2
C4
+
VOUT
+
–
+
–
+
-
VOUT
SW1
C1
SW3
C2
–
+
VOUT
C3
+
–
+
–
SW2
SW4
–
+
C3
-5V
SW2
SW4
-5V
FIGURE 4-3:
Charge Pump - Phase 3.
Transfer - Phase 4
+
4.4
V
OUT
FIGURE 4-1:
Charge Pump - Phase 1.
Transfer - Phase 2
The fourth phase of the clock connects the negative
-
4.2
V
OUT
terminal of C to ground and transfers the generated
2
+
10V across C to C , the V
storage capacitor.
Phase two of the clock connects the negative terminal
2
4
OUT
-
Simultaneously, the positive side of capacitor C is
of C to the V
storage capacitor C and the positive
3
1
2
OUT
switched to +5V and the negative side is connected to
ground, and the cycle begins again.
terminal of C to ground, transferring the generated
2
-10V to C . Simultaneously, the positive side of capac-
3
itor C is switched to +5V and the negative side is
1
connected to ground.
+5V
–
C4
+5V
+
+
VOUT
–
SW1
C1
SW3
+
C4
-
+
VOUT
+
–
+
VOUT
C2
SW1
C1
SW3
C2
–
–
+
-
C3
VOUT
+
–
+
–
SW2
SW4
–
+
C3
-5V
-10V
SW2
SW4
-5V
-10V
FIGURE 4-4:
Charge Pump - Phase 4.
FIGURE 4-2:
Charge Pump - Phase 2.
DS21486B-page 6
2002 Microchip Technology Inc.
TCM680
4.5
Maximum Operating Limits
The maximum input voltage rating must be observed.
The TCM680 will clamp the input voltage to 5.8V.
Exceeding this maximum threshold will cause exces-
sive current to flow through the TCM680, potentially
causing permanent damage to the device.
4.6
Switched Capacitor Converter
Power Losses
The overall power loss of a switched capacitor
converter is affected by four factors:
1. Losses from power consumed by the internal
oscillator, switch drive, etc. These losses will
vary with input voltage, temperature and
oscillator frequency.
2. Conduction losses in the non-ideal switches.
3. Losses due to the non-ideal nature of the
external capacitors.
4. Losses that occur during charge transfer from
the pump to reservoir capacitors when a voltage
difference between the capacitors exists.
The power loss for the TCM680 is calculated using the
following equation:
EQUATION
2
-
2
+
P
= (I
) X R
+ (I
) X R
+ I X V
OUT IN IN
LOSS
OUT+
OUT
OUT-
2002 Microchip Technology Inc.
DS21486B-page 7
TCM680
R
is typically 140Ω at +25°C with V = +5V and C
IN 1
2
SW
5.0
5.1
APPLICATIONS INFORMATION
OUT
and C as 4.7 µF low ESR capacitors. The fixed term
(32R ) is about 130Ω. It can easily be seen that
Voltage Multiplication and
Inversion
increasing or decreasing values of C and C will affect
1
2
efficiency by changing R
. However, be careful
OUT
The TCM680 performs voltage multiplication and inver-
sion simultaneously, providing positive and negative
outputs (Figure 5-1). The magnitude of both outputs is,
approximately, twice the input voltage. Unlike other
switched capacitor converters, the TCM680 requires
only four external capacitors to provide both functions
simultaneously.
about ESR. This term can quickly become dominant
with large electrolytic capacitors. Table 5-1 shows
R
for various values of C and C (assume 0.5Ω
1 2
OUT
ESR). C and C must be rated at 6 VDC or greater
1
4
while C and C must be rated at 12 VDC or greater.
2
3
Output voltage ripple is affected by C and C .
3
4
Typically, the larger the value of C and C , the less the
3
4
ripple for a given load current. The formula for
+
V
is given below:
RIPPLE(p-p)
C1
22 µF
+
+
8
7
6
5
+
1
2
-
VOUT
VOUT
C1
C2
EQUATION
V
V
+
+
+
C4
C1
+
+
+
= {1/[2(f
/3) x C4] + 2(ESR )} (I
)
22 µF
RIPPLE(p-p)
PUMP
C4
OUT
OUT
C2
TCM680
–
–
-
3
4
22 µF
VIN
VIN
GND
C2
= {1/[2(f
/3) x C3] + 2(ESR )} (I
)
RIPPLE(p-p)
PUMP
C3
-
VOUT GND
For a 10 µF (0.5Ω ESR) capacitor for C , C ,
3
4
C3
f
= 21 kHz and I
= 10 mA, the peak-to-peak
PUMP
OUT
22 µF
ripple voltage at the output will be less than 100 mV. In
most applications (I ≤ 10 mA), 10-20 µF output
-
VOUT
OUT
capacitors and 1-5 µF pump capacitors will suffice.
FIGURE 5-1:
Positive and Negative
Table 5-2 shows V for different values of C and
RIPPLE
3
Converter.
C (assume 1 Ω ESR).
4
5.2
Capacitor Selection
TABLE 5-1:
OUTPUT RESISTANCE
The TCM680 requires only 4 external capacitors for
operation, which can be inexpensive, polarized alumi-
num electrolytic types. For the circuit in Figure 5-1, the
output characteristics are largely determined by the
external capacitors. An expression for R
derived as shown below:
VS. C , C
1
2
R
+
-
C , C (µF)
, R
(Ω)
OUT
1
2
OUT
0.1
0.47
1
3.3
4.7
10
1089
339
232
165
157
146
141
137
can be
OUT
EQUATION
ROUT+ = 4(RSW1 + RSW2 + ESRC1 + RSW3 + RSW4 + ESRC2
)
+4(RSW1 + RSW2 + ESRC1 + RSW3 + RSW4 + ESRC2
+1/(fPUMP x C1) + 1/(fPUMP x C2) + ESRC4
)
)
22
100
–
ROUT = 4(RSW1 + RSW2 + ESRC1 + RSW3 + RSW4 + ESRC2
)
+4(RSW1 + RSW2 + ESRC1 + RSW3 + RSW4 + ESRC2
+1/(fPUMP x C1) + 1/(fPUMP x C2) + ESRC3
TABLE 5-2:
V
PEAK-TO-PEAK
RIPPLE
VS. C , C (I
10 mA)
3
4
OUT
+
-
C , C (µF)
V
,V
(mV)
3
4
0.47
1
RIPPLE(p-p)
RIPPLE(p-p)
Assuming all switch resistances are approximately
equal:
1540
734
236
172
91
EQUATION
3.3
4.7
10
22
100
ROUT+ = 32RSW + 8ESRC1 + 8ESRC2 + ESRC4
+1/(fPUMP x C1) + 1/(fPUMP x C2)
ROUT– = 32RSW + 8ESRC1 + 8ESRC2 + ESRC3
+1/(fPUMP x C1) + 1/(fPUMP x C2)
52
27
DS21486B-page 8
2002 Microchip Technology Inc.
TCM680
5.3
Paralleling Devices
5.4
Output Voltage Regulation
-
+
To reduce the value of R
and R
, multiple
The outputs of the TCM680 can be regulated to provide
+5V from a 3V input source (Figure 5-3). The TCM680
performs voltage multiplication and inversion produc-
ing output voltages of, approximately, +6V. The
TCM680 outputs are regulated to +5V with the linear
regulators TC55 and TC59. The TC54 is a voltage
detector providing an indication that the input source is
low and that the outputs may fall out of regulation. The
input source to the TCM680 can vary from 2.8V to 5.5V
without adversely affecting the output regulation mak-
ing this application well suited for use with single cell
Li-Ion batteries or three alkaline or nickel based
batteries connected in series.
OUT
OUT
TCM680 voltage converters can be connected in paral-
lel (Figure 5-2). The output resistance of both outputs
will be reduced, approximately, by a factor of n, where
n is the number of devices connected in parallel.
EQUATION
-
-
R
= R
(of TCM680)
OUT
OUT
n (number of devices)
EQUATION
+
+
R
= R
(of TCM680)
OUT
OUT
n (number of devices)
Each device requires its own pump capacitors, but all
devices may share the same reservoir capacitors. To
preserve ripple performance, the value of the reservoir
capacitors should be scaled according to the number of
devices connected in parallel.
V
IN
–
22 µF
+
+
-
+
V
V
IN
C
C
IN
C
C
1
1
1
1
+
–
+
-
+
–
V
OUT
Positive
Supply
10 µF
+
-
10 µF
V
OUT
-
TCM680
TCM680
+
+
C
C
C
C
2
2
2
+
–
+
Negative
Supply
V
10 µF
10 µF
OUT
–
-
V
OUT
-
GND
2
GND
–
+
22 µF
GND
FIGURE 5-2:
Paralleling TCM680 for Lower Output Source Resistance.
2002 Microchip Technology Inc.
DS21486B-page 9
TCM680
+
–
+
COUT
22 µF
TC55RP5002EXX
VIN
VOUT
+5 Supply
Ground
+
-
VIN
C1
+6V
+
–
+
10 µF
1 µF
1 µF
VSS
–
C1
C2
+
–
TCM680
3V
+
–
+
+
VSS
10 µF
-6V
–
-
-5 Supply
-
VOUT
VIN
VOUT
C2
GND
-
–
+
COUT
22 µF
TC595002ECB
TC54VC2702Exx
VOUT
VIN
LOW BATTERY
VSS
FIGURE 5-3:
Split Supply Derived from 3V Battery.
DS21486B-page 10
2002 Microchip Technology Inc.
TCM680
6.0
6.1
PACKAGING INFORMATION
Packaging Marking Information
8-Lead PDIP (300 mil)
Example:
XXXXXXXX
XXXXXNNN
TCM680
CPA123
YYWW
0231
8-Lead SOIC (150 mil)
Example:
TCM680
XXXXXXXX
XXXXYYWW
COA0231
NNN
123
Legend: XX...X Customer specific information*
YY
WW
NNN
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line thus limiting the number of available characters
for customer specific information.
*
Standard OTP marking consists of Microchip part number, year code, week code, and traceability code.
2002 Microchip Technology Inc.
DS21486B-page 11
TCM680
8-Lead Plastic Dual In-line (P) – 300 mil (PDIP)
E1
D
2
n
1
α
E
A2
A
L
c
A1
β
B1
B
p
eB
Units
Dimension Limits
INCHES*
NOM
MILLIMETERS
MIN
MAX
MIN
NOM
8
MAX
n
p
A
A2
A1
E
E1
D
L
c
B1
B
Number of Pins
Pitch
Top to Seating Plane
Molded Package Thickness
Base to Seating Plane
Shoulder to Shoulder Width
Molded Package Width
Overall Length
Tip to Seating Plane
Lead Thickness
Upper Lead Width
Lower Lead Width
Overall Row Spacing
Mold Draft Angle Top
Mold Draft Angle Bottom
8
.100
.155
.130
2.54
3.94
3.30
.140
.170
.145
3.56
2.92
4.32
3.68
.115
.015
.300
.240
.360
.125
.008
.045
.014
.310
5
0.38
7.62
6.10
9.14
3.18
0.20
1.14
0.36
7.87
5
.313
.250
.373
.130
.012
.058
.018
.370
10
.325
.260
.385
.135
.015
.070
.022
.430
15
7.94
6.35
9.46
3.30
0.29
1.46
0.46
9.40
10
8.26
6.60
9.78
3.43
0.38
1.78
0.56
10.92
15
§
eB
α
β
5
10
15
5
10
15
* Controlling Parameter
§ Significant Characteristic
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: MS-001
Drawing No. C04-018
DS21486B-page 12
2002 Microchip Technology Inc.
TCM680
8-Lead Plastic Small Outline (SN) – Narrow, 150 mil (SOIC)
E
E1
p
D
2
B
n
1
h
α
45°
c
A2
A
φ
β
L
A1
Units
INCHES*
NOM
MILLIMETERS
Dimension Limits
MIN
MAX
MIN
NOM
8
MAX
n
p
A
A2
A1
E
E1
D
Number of Pins
Pitch
Overall Height
8
.050
.061
.056
.007
.237
.154
.193
.015
.025
4
1.27
.053
.069
1.35
1.32
1.55
1.42
0.18
6.02
3.91
4.90
0.38
0.62
4
1.75
1.55
0.25
6.20
3.99
5.00
0.51
0.76
8
Molded Package Thickness
Standoff
.052
.004
.228
.146
.189
.010
.019
0
.061
.010
.244
.157
.197
.020
.030
8
§
0.10
5.79
3.71
4.80
0.25
0.48
0
Overall Width
Molded Package Width
Overall Length
Chamfer Distance
Foot Length
Foot Angle
h
L
φ
c
Lead Thickness
Lead Width
.008
.013
0
.009
.017
12
.010
.020
15
0.20
0.33
0
0.23
0.42
12
0.25
0.51
15
B
α
β
Mold Draft Angle Top
Mold Draft Angle Bottom
0
12
15
0
12
15
* Controlling Parameter
§ Significant Characteristic
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: MS-012
Drawing No. C04-057
2002 Microchip Technology Inc.
DS21486B-page 13
TCM680
NOTES:
DS21486B-page 14
2002 Microchip Technology Inc.
TCM680
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
Device
X
/XX
Examples:
Temperature Package
Range
a)
b)
c)
d)
e)
f)
TCM680COA: Charge Pump Converter,
SOIC pkg, 0°C to +70°C.
TCM680COATR: Charge Pump Converter,
SOIC pkg, 0°C to +70°C, Tape and Reel.
TCM680CPA: Charge Pump Converter,
PDIP pkg, 0°C to +70°C.
TCM680EOA: Charge Pump Converter,
SOIC pkg, -40°C to +85°C.
TCM680EOATR: Charge Pump Converter,
SOIC pkg, -40°C to +85°C, Tape and Reel.
TCM680EPA: Charge Pump Converter,
PDIP pkg, -40°C to +85°C.
Device:
TCM680: Charge Pump Converter
Temperature Range:
Package:
C
E
=
=
0°C to +70°C
-40°C to +85°C
PA
=
Plastic DIP (300 mil Body), 8-lead
Plastic SOIC, (150 mil Body), 8-lead
Plastic SOIC, (150 mil Body), 8-lead
(Tape and Reel)
OA
=
=
OATR
Sales and Support
Data Sheets
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recom-
mended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:
1. Your local Microchip sales office
2. The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277
3. The Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.
New Customer Notification System
Register on our web site (www.microchip.com/cn) to receive the most current information on our products.
2002 Microchip Technology Inc.
DS21486B-page15
TCM680
NOTES:
DS21486B-page 16
2002 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowl-
edge, require using the Microchip products in a manner outside the operating specifications contained in Microchip's Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products.
Information contained in this publication regarding device
applications and the like is intended through suggestion only
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
No representation or warranty is given and no liability is
assumed by Microchip Technology Incorporated with respect
to the accuracy or use of such information, or infringement of
patents or other intellectual property rights arising from such
use or otherwise. Use of Microchip’s products as critical com-
ponents in life support systems is not authorized except with
express written approval by Microchip. No licenses are con-
veyed, implicitly or otherwise, under any intellectual property
rights.
Trademarks
The Microchip name and logo, the Microchip logo, KEELOQ,
MPLAB, PIC, PICmicro, PICSTART and PRO MATE are
registered trademarks of Microchip Technology Incorporated
in the U.S.A. and other countries.
FilterLab, microID, MXDEV, MXLAB, PICMASTER, SEEVAL
and The Embedded Control Solutions Company are
registered trademarks of Microchip Technology Incorporated
in the U.S.A.
dsPIC, dsPICDEM.net, ECONOMONITOR, FanSense,
FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP,
ICEPIC, microPort, Migratable Memory, MPASM, MPLIB,
MPLINK, MPSIM, PICC, PICDEM, PICDEM.net, rfPIC, Select
Mode and Total Endurance are trademarks of Microchip
Technology Incorporated in the U.S.A. and other countries.
Serialized Quick Turn Programming (SQTP) is a service mark
of Microchip Technology Incorporated in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2002, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Microchip received QS-9000 quality system
certification for its worldwide headquarters,
design and wafer fabrication facilities in
Chandler and Tempe, Arizona in July 1999
and Mountain View, California in March 2002.
The Company’s quality system processes and
procedures are QS-9000 compliant for its
®
PICmicro 8-bit MCUs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals,
non-volatile memory and analog products. In
addition, Microchip’s quality system for the
design and manufacture of development
systems is ISO 9001 certified.
2002 Microchip Technology Inc.
DS21486B - page 17
M
WORLDWIDE SALES AND SERVICE
Japan
AMERICAS
ASIA/PACIFIC
Microchip Technology Japan K.K.
Benex S-1 6F
Corporate Office
Australia
2355 West Chandler Blvd.
Microchip Technology Australia Pty Ltd
Suite 22, 41 Rawson Street
Epping 2121, NSW
3-18-20, Shinyokohama
Kohoku-Ku, Yokohama-shi
Kanagawa, 222-0033, Japan
Tel: 81-45-471- 6166 Fax: 81-45-471-6122
Chandler, AZ 85224-6199
Tel: 480-792-7200 Fax: 480-792-7277
Technical Support: 480-792-7627
Web Address: http://www.microchip.com
Australia
Tel: 61-2-9868-6733 Fax: 61-2-9868-6755
Korea
China - Beijing
Rocky Mountain
Microchip Technology Korea
168-1, Youngbo Bldg. 3 Floor
Samsung-Dong, Kangnam-Ku
Seoul, Korea 135-882
Microchip Technology Consulting (Shanghai)
Co., Ltd., Beijing Liaison Office
Unit 915
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Chandler, AZ 85224-6199
Tel: 480-792-7966 Fax: 480-792-4338
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Atlanta
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Tel: 86-10-85282100 Fax: 86-10-85282104
Singapore
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Alpharetta, GA 30022
Microchip Technology Singapore Pte Ltd.
200 Middle Road
Tel: 770-640-0034 Fax: 770-640-0307
China - Chengdu
#07-02 Prime Centre
Boston
Microchip Technology Consulting (Shanghai)
Co., Ltd., Chengdu Liaison Office
Rm. 2401-2402, 24th Floor,
Singapore, 188980
2 Lan Drive, Suite 120
Westford, MA 01886
Tel: 978-692-3848 Fax: 978-692-3821
Tel: 65-6334-8870 Fax: 65-6334-8850
Taiwan
Ming Xing Financial Tower
Microchip Technology (Barbados) Inc.,
Taiwan Branch
No. 88 TIDU Street
Chicago
Chengdu 610016, China
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Tel: 86-28-86766200 Fax: 86-28-86766599
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Tel: 630-285-0071 Fax: 630-285-0075
Microchip Technology Consulting (Shanghai)
Co., Ltd., Fuzhou Liaison Office
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Tel: 886-2-2717-7175 Fax: 886-2-2545-0139
Dallas
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Lautrup hoj 1-3
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Microchip Technology Consulting (Shanghai)
Co., Ltd.
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Tel: 45 4420 9895 Fax: 45 4420 9910
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Room 701, Bldg. B
18201 Von Karman, Suite 1090
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No. 317 Xian Xia Road
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Tel: 86-21-6275-5700 Fax: 86-21-6275-5060
Microchip Technology Inc.
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San Jose, CA 95131
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Batiment A - ler Etage
Microchip Technology Consulting (Shanghai)
Co., Ltd., Shenzhen Liaison Office
91300 Massy, France
Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79
Tel: 408-436-7950 Fax: 408-436-7955
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No. 5022 Binhe Road, Futian District
Shenzhen 518033, China
Germany
Toronto
Microchip Technology GmbH
Steinheilstrasse 10
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Tel: 905-673-0699 Fax: 905-673-6509
Tel: 86-755-82901380 Fax: 86-755-82966626
D-85737 Ismaning, Germany
China - Qingdao
Tel: 49-89-627-144 0 Fax: 49-89-627-144-44
Rm. B503, Fullhope Plaza,
Italy
No. 12 Hong Kong Central Rd.
Qingdao 266071, China
Microchip Technology SRL
Centro Direzionale Colleoni
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20041 Agrate Brianza
Tel: 86-532-5027355 Fax: 86-532-5027205
India
Milan, Italy
Microchip Technology Inc.
India Liaison Office
Tel: 39-039-65791-1 Fax: 39-039-6899883
Divyasree Chambers
United Kingdom
1 Floor, Wing A (A3/A4)
No. 11, O’Shaugnessey Road
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Tel: 91-80-2290061 Fax: 91-80-2290062
Microchip Ltd.
505 Eskdale Road
Winnersh Triangle
Wokingham
Berkshire, England RG41 5TU
Tel: 44 118 921 5869 Fax: 44-118 921-5820
12/05/02
DS21486B-page 18
2002 Microchip Technology Inc.
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