TC682COA_技术文档

TC682

Inverting Voltage Doubler

Features:

General Description:

• 99.9% Voltage Conversion Efficiency

• 92% Power Conversion Efficiency

• Wide Input Voltage Range:

- +2.4V to +5.5V

The TC682 is a CMOS charge pump converter that

provides an inverted doubled output from a single

positive supply. An on-board 12 kHz (typical) oscillator

provides the clock and only 3 external capacitors are

required for full circuit implementation.

• Only 3 External Capacitors Required

• 185 μA Supply Current

• Space-Saving 8-Pin SOIC and 8-Pin PDIP

Packages

Low output source impedance (typically 140Ω),

provides output current up to 10 mA. The TC682 fea-

tures low quiescent current and high efficiency, making

it the ideal choice for a wide variety of applications that

require a negative voltage derived from a single

positive supply (for example: generation of -6V from a

3V lithium cell or -10V generated from a +5V logic

supply).

Applications:

• -10V from +5V Logic Supply

• -6V from a Single 3V Lithium Cell

• Portable Handheld Instruments

• Cellular Phones

The minimum external parts count and small physical

size of the TC682 make it useful in many medium-

current, dual voltage analog power supplies.

• LCD Display Bias Generator

• Panel Meters

Functional Block Diagram

• Operational Amplifier Power Supplies

+2.4V < V < +5.5V

IN

V

IN

Device Selection Table

V

IN

Operating

Temp.

Range

Part

Number

+

–

C

1

Package

+

–

C

1

2

TC682COA

TC682CPA

TC682EOA

TC682EPA

8-Pin SOIC

8-Pin PDIP

8-Pin SOIC

8-Pin PDIP

0°C to +70°C

-40°C to +85°C

TC682

+

C

+

–

2

V

= -(2 x V )

IN

OUT

V

–

V

OUT

GND

C

OUT

+

GND

All Caps = 3.3 μF

Package Type

8-Pin PDIP

8-Pin SOIC

–

C

1

2

3

4

8

7

6

5

NC

1

2

3

4

8

7

6

5

NC

1

+

–

+

1

+

C

+

1

C

V

C

V

2

TC682COA

TC682EOA

TC682CPA

TC682EPA

–

C

IN

2

V

GND

OUT

DS21453C-page 1

TC682

*Stresses above those listed under “Absolute

Maximum Ratings” may cause permanent damage to

the device. These are stress ratings only and functional

operation of the device at these or any other conditions

above those indicated in the operation sections of the

specifications is not implied. Exposure to Absolute

Maximum Rating conditions for extended periods may

affect device reliability.

1.0

ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings*

V_IN.......................................................................+5.8V

V_INdV/dT ........................................................ 1V/μsec

V_OUT...................................................................-11.6V

Short-Circuit Duration - V_OUT.....................Continuous

Power Dissipation (T_A≤ 70°C)

8-Pin PDIP ..............................................730 mW

8-Pin SOIC ..............................................470 mW

Operating Temperature Range.............-40°C to +85°C

Storage Temperature (Unbiased).......-65°C to +150°C

TC682 ELECTRICAL SPECIFICATIONS

Electrical Characteristics: Over operating temperature range, V = +5V, test circuit Figure 3-1 unless otherwise noted.

IN

Symbol

Parameter

Min

Typ

Max

Units

Test Conditions

V

I

Supply Voltage Range

Supply Current

2.4

—

5.5

V

R = 2 kΩ

IN

L

—

185

—

300

400

μA

R = ∞, T = 25°C

IN

L

A

R = ∞

L

–

R

V

Source Resistance

—

140

—

170

180

230

320

Ω

I

= 10 mA, T = 25°C

= 10 mA

= 5 mA, V = 2.8V

IN

OUT

L

A

–

F

Oscillator Frequency

Power Efficiency

—

90

99

12

92

—

kHz

%

OSC

P

V

R = 2 kΩ, T = 25°C

EFF

L

A

Voltage Conversion Efficiency

99.9

%

V

, R = ∞

OUTEFF

OUT

L

DS21453C-page 2

TC682

2.0

PIN DESCRIPTION

The descriptions of the pins are listed in Table 2-1.

TABLE 2-1:

PIN FUNCTION TABLE

Symbol

Pin No.

(8-Pin PDIP,

SOIC)

Description

1

2

3

4

5

6

7

8

C1–

C2+

C2–

V_OUT

GND

V_IN

Input. Capacitor C1 negative terminal.

Input. Capacitor C2 positive terminal.

Input. Capacitor C2 negative terminal.

Output. Negative output voltage (-2V_IN).

Input. Ground.

Input. Power supply voltage.

Input. Capacitor C1 positive terminal.

No connection.

C1+

NC

DS21453C-page 3

TC682

3.0

DETAILED DESCRIPTION

+5V

V

IN

(+5V)

6

SW1

SW3

V

IN

7

1

+

–

C

1

V

OUT

+

–

+

–

+

–

C

1

2

C

1

C

2

–

+

C

3

TC682

2

3

SW2

SW4

+

C

+

–

2

-10V

4

–

V

–

V

OUT

–

+

GND

5

C

OUT

R

L

FIGURE 3-3:

Charge Pump – Phase 2

GND

All Caps = 3.3 μF

3.3 Maximum Operating Limits

FIGURE 3-1:

3.1 Phase 1

TC682 Test Circuit

The TC682 has on-chip Zener diodes that clamp V_IN

to approximately 5.8V, and V_OUTto -11.6V. Never

exceed the maximum supply voltage or excessive

current will be shunted by these diodes, potentially

damaging the chip. The TC682 will operate over the

entire operating temperature range with an input

voltage of 2V to 5.5V.

V_SScharge storage – before this phase of the clock

cycle, capacitor C₁is already charged to +5V. C₁is

+

–

then switched to ground and the charge in C₁is

transferred to C₂^–. Since C₂is at +5V, the voltage

+

potential across capacitor C₂is now -10V.

3.4

Efficiency Considerations

Theoretically a charge pump voltage multiplier can

approach 100% efficiency under the following

conditions:

V

= +5V

IN

• The charge pump switches have virtually no offset

and are extremely low on resistance.

SW1

SW3

V

OUT

+

–

+

–

• Minimal power is consumed by the drive circuitry.

C

2

1

–

• The impedances of the reservoir and pump

capacitors are negligible.

C

3

SW2

-5V

+

SW4

For the TC682, efficiency is as shown below:

Voltage Efficiency = V_OUT/ (-2V_IN)

V

_OUT= -2V_IN+ V_DROP

FIGURE 3-2:

3.2 Phase 2

Charge Pump – Phase 1

V_DROP= (I_OUT) (R_OUT

)

Power Loss

= I_OUT(V_DROP)

There will be a substantial voltage difference between

V_OUTand -2V_INif the impedances of the pump capaci-

tors C₁and C₂are high with respect to their respective

output loads.

V_SStransfer – phase two of the clock connects the neg-

ative terminal of C₂to the negative side of reservoir

capacitor C₃and the positive terminal of C₂to ground,

transferring the generated -10V to C₃. Simultaneously,

the positive side of capacitor C₁is switched to +5V and

the negative side is connected to ground. C₂is then

switched to V_CCand GND and Phase 1 begins again.

Larger values of reservoir capacitor C₃will reduce

output ripple. Larger values of both pump and reservoir

capacitors improve the efficiency. See Section 4.2

“Capacitor Selection” “Capacitor Selection”.

DS21453C-page 4

TC682

Output voltage ripple is affected by C3. Typically the

larger the value of C3 the less the ripple for a given load

current. The formula for _P-PV_RIPPLEis given below:

4.0

4.1

TYPICAL APPLICATIONS

Negative Doubling Converter

V_RIPPLE= {1/[2(f_PUMPx C3)] + 2(ESR_C3)} (I_OUT

)

The most common application of the TC682 is as a

charge pump voltage converter which provides a

negative output of two times a positive input voltage

(Figure 4-1).

For a 10 μF (0.5Ω ESR) capacitor for C3, f_PUMP= 10

kHz and I_OUT= 10 mA the peak-to-peak ripple voltage

at the output will be less then 60 mV. In most

applications (I_OUT< = 10 mA) a 10-20 μF capacitor and

1-5 μF pump capacitors will suffice. Table 4-2 shows

V_RIPPLEfor different values of C3 (assume 1Ω ESR).

+

C

22 μF

1

2

1

2

–

+

C

1

2

TABLE 4-1:

OUTPUT RESISTANCE

VS. C1, C2

7

+

C

1

+

TC682

C1, C2 (μF)

0.05

R_OUT(Ω)

6

5

3

4

–

V

C

IN

2

4085

2084

510

285

145

125

105

94

–

GND

V

GND

OUT

0.10

0.47

+

C

3

22 μF

–

V

OUT

1.00

3.30

FIGURE 4-1:

Inverting Voltage Doubler

5.00

10.00

22.00

100.00

4.2 Capacitor Selection

The output resistance of the TC682 is determined, in

part, by the ESR of the capacitors used. An expression

for R_OUTis derived as shown below:

87

TABLE 4-2:

V

_RIPPLEPEAK-TO-PEAK

R

= 2(R

+ R

+ ESR + R

+ R

+ ESR

)

C2

OUT

SW1

SW2

C1

SW3

SW4

VS. C3 (I_OUT10mA)

+2(R

+1/(f

+ESR

+ R

+ ESR + R

+ R

+ ESR

)

C2

SW1

SW2

C1

SW3

SW4

x C1) +1/(f

x C2)

PUMP

C3 (μF)

V_RIPPLE(mV)

PUMP

C3

0.50

1.00

1020

520

172

120

70

Assuming all switch resistances are approximately

equal:

3.30

R

= 16R

+1/(f

+ 4ESR + 4ESR + ESR

OUT

SW C1 C2 C3

5.00

x C1) +1/(f

x C2)

PUMP

10.00

22.00

100.00

R_OUTis typically 140Ω at +25°C with V_IN= +5V and 3.3

43

μF low ESR capacitors. The fixed term (16R_SW) is

about 80-90Ω. It can be seen easily that increasing or

decreasing values of C1 and C2 will affect efficiency by

changing R_OUT. However, be careful about ESR. This

term can quickly become dominant with large electro-

lytic capacitors. Table 4-1 shows R_OUTfor various

values of C1 and C2 (assume 0.5Ω ESR). C1 must be

rated at 6VDC or greater while C2 and C3 must be

rated at 12VDC or greater.

25

DS21453C-page 5

TC682

4.3

Paralleling Devices

4.4

-5V Regulated Supply From A

Single 3V Battery

Paralleling multiple TC682s reduces the output

resistance of the converter. The effective output

resistance is the output resistance of a single device

divided by the number of devices. As illustrated in

Figure , each requires separate pump capacitors C₁

and C₂, but all can share a single reservoir capacitor.

Figure 4-3 shows a -5V power supply using one 3V

battery. The TC682 provides -6V at V_OUT, which is

regulated to -5V by the negative LDO. The input to the

TC682 can vary from 3V to 5.5V without affecting

regulation appreciably. A TC54 device is connected to

the battery to detect undervoltage. This unit is set to

detect at 2.7V. With higher input voltage, more current

can be drawn from the outputs of the TC682. With 5V

at V_IN, 10 mA can be drawn from the regulated output.

Assuming 150Ω source resistance for the converter,

with I_L^–= 10 mA, the charge pump will droop 1.5V.

V

IN

V

+

–

+

–

IN

C

1

+

–

10 μF

–

TC682

+

–

+

–

C

2

–

+

V

OUT

Negative

Supply

10 μF

–

V

OUT

–

GND

–

+

–

22 μF

C

OUT

GND

FIGURE 4-2:

Paralleling TC682 for Lower Output Source Resistance

+

V

C

IN

1

+

10 μF

–

+

C

1

2

+

–

Ground

3V

TC682

+

–

1 μF

+

V

SS

10

μ

F

–

V

OUT

-5 Supply

–

V

OUT

V

C

IN

2

GND

Negative LDO

Regulator

–

+

22

μF

–

C

OUT

TC54VC2702Exx

V

LOW BATTERY

V

OUT

IN

V

SS

FIGURE 4-3:

Negative Supply Derived from 3V Battery

DS21453C-page 6

TC682

5.0

TYPICAL CHARACTERISTICS

Note:

The graphs and tables provided following this note are a statistical summary based on a limited number of

samples and are provided for informational purposes only. The performance characteristics listed herein

are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified

operating range (e.g., outside specified power supply range) and therefore outside the warranted range.

Circuit of Figure 3-1, C₁= C₂= C_OUT= 3.3 μF, T_A= 25°C unless otherwise noted.

Output Resistance vs. V

IN

V

vs. Load Current

OUT

240

220

200

180

160

-7.5

-8.0

V

= 5V

C1 – C3 = 3.3 µF

IN

-8.5

-9.0

-9.5

140

120

-10.0

-10.5

0

5

10

15

1

2

3

5

6

4

V

(V)

IN

LOAD CURRENT (mA)

Supply Current vs. V

IN

Output Source Resistance vs. Temperature

300

250

200

150

200

180

NO LOAD

V

OUT

= 5V

IN

I

= 10 mA

160

140

120

100

80

100

50

1

2

3

5

6

4

-50

0

50

100

V

(V)

IN

TEMPERATURE (°C)

Output Ripple vs. Output Current

200

150

V

= 5V

IN

C3 = 10 μF

100

C3 = 100 μF

50

0

10

20

5

15

OUTPUT CURRENT (mA)

DS21453C-page 7

TC682

6.0

6.1

PACKAGING INFORMATION

Package Marking Information

Package marking data not available at this time.

6.2

Taping Form

Component Taping Orientation for 8-Pin SOIC (Narrow) Devices

User Direction of Feed

Pin 1

W

P

Standard Reel Component Orientation

for 713 Suffix Device

Carrier Tape, Number of Components Per Reel and Reel Size

Package

Carrier Width (W)

Pitch (P)

Part Per Full Reel

Reel Size

8-Pin SOIC (N)

12 mm

8 mm

2500

13 in

6.3

Package Dimensions

8-Pin Plastic DIP

Pin 1

.260 (6.60)

.240 (6.10)

.045 (1.14)

.030 (0.76)

.070 (1.78)

.040 (1.02)

.310 (7.87)

.290 (7.37)

.400 (10.16)

.348 (8.84)

.200 (5.08)

.140 (3.56)

.040 (1.02)

.020 (0.51)

.015 (0.38)

.008 (0.20)

3° Min.

.150 (3.81)

.115 (2.92)

.400 (10.16)

.310 (7.87)

.110 (2.79)

.090 (2.29)

.022 (0.56)

.015 (0.38)

Dimensions: inches (mm)

DS21453C-page 8

TC682

8-Pin SOIC

Pin 1

.157 (3.99)

.150 (3.81)

.244 (6.20)

.228 (5.79)

.050 (1.27) Typ.

.197 (5.00)

.189 (4.80)

.069 (1.75)

.053 (1.35)

.010 (0.25)

.007 (0.18)

8° Max.

.020 (0.51)

.013 (0.33)

.010 (0.25)

.004 (0.10)

.050 (1.27)

.016 (0.40)

Dimensions: inches (mm)

DS21453C-page 9

TC682

NOTES:

DS21453C-page 10

TC682

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DS21453C-page 11

TC682

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TC682

DS21453C

Literature Number:

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DS21453C-page 12

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•

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•

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•

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•

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DS21453C-page 13

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82-2-558-5934

Chicago

Itasca, IL

Tel: 630-285-0071

Fax: 630-285-0075

Spain - Madrid

Tel: 34-91-708-08-90

Fax: 34-91-708-08-91

China - Shanghai

Tel: 86-21-5407-5533

Fax: 86-21-5407-5066

Malaysia - Penang

Tel: 60-4-646-8870

Fax: 60-4-646-5086

Dallas

Addison, TX

Tel: 972-818-7423

Fax: 972-818-2924

UK - Wokingham

Tel: 44-118-921-5869

Fax: 44-118-921-5820

China - Shenyang

Tel: 86-24-2334-2829

Fax: 86-24-2334-2393

Philippines - Manila

Tel: 63-2-634-9065

Fax: 63-2-634-9069

Detroit

China - Shenzhen

Farmington Hills, MI

Tel: 248-538-2250

Fax: 248-538-2260

Tel: 86-755-8203-2660

Fax: 86-755-8203-1760

Singapore

Tel: 65-6334-8870

Fax: 65-6334-8850

China - Shunde

Tel: 86-757-2839-5507

Fax: 86-757-2839-5571

Kokomo

Kokomo, IN

Tel: 765-864-8360

Fax: 765-864-8387

Taiwan - Hsin Chu

Tel: 886-3-572-9526

Fax: 886-3-572-6459

China - Wuhan

Tel: 86-27-5980-5300

Fax: 86-27-5980-5118

Taiwan - Kaohsiung

Tel: 886-7-536-4818

Fax: 886-7-536-4803

Los Angeles

Mission Viejo, CA

Tel: 949-462-9523

Fax: 949-462-9608

China - Xian

Tel: 86-29-8833-7250

Fax: 86-29-8833-7256

Taiwan - Taipei

Tel: 886-2-2500-6610

Fax: 886-2-2508-0102

San Jose

Mountain View, CA

Tel: 650-215-1444

Fax: 650-961-0286

Thailand - Bangkok

Tel: 66-2-694-1351

Fax: 66-2-694-1350

Toronto

Mississauga, Ontario,

Canada

Tel: 905-673-0699

Fax: 905-673-6509

02/16/06

DS21453C-page 14


型号：	TC682COA
厂家：	MICROCHIP
描述：	Inverting Voltage Doubler 反相电压倍增
文件：	总14页 (文件大小：535K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

TC682COA [MICROCHIP]

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