TC649EOA [MICROCHIP]
PWM Fan Speed Controller with Auto-Shutdown and FanSense⑩ Technology; PWM风扇速度控制器，自动关闭和FanSense⑩技术
| 型号： | TC649EOA |
| 厂家： | 
MICROCHIP |
| 描述： | PWM Fan Speed Controller with Auto-Shutdown and FanSense⑩ Technology |
| 文件： | 总28页 (文件大小：462K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TC649
M
PWM Fan Speed Controller with Auto-Shutdown
and FanSense™ Technology
Features
Package Types
• Temperature Proportional Fan Speed for Acoustic
Control and Longer Fan Life
SOIC/PDIP/MSOP
• Efficient PWM Fan Drive
• 3.0V to 5.5V Supply Range:
- Fan Voltage Independent of TC649
Supply Voltage
V
V
V
1
2
3
4
8
7
6
5
IN
DD
C
OUT
F
TC649
V
FAULT
SENSE
AS
- Supports any Fan Voltage
GND
• FanSense™ Fault Detection Circuits Protect
Against Fan Failure and Aid System Testing
• Automatic Shutdown Mode for “Green” Systems
• Supports Low Cost NTC/PTC Thermistors
• Space Saving 8-Pin MSOP Package
General Description
The TC649 is a switch mode, fan speed controller for
use with brushless DC fans. Temperature proportional
speed control is accomplished using pulse width mod-
ulation (PWM). A thermistor (or other voltage output
Applications
• Power Supplies
• Computers
• File Servers
• Portable Computers
• Telecom Equipment
• UPSs, Power Amps
• General Purpose Fan Speed Control
temperature sensor) connected to the V input fur-
IN
nishes the required control voltage of 1.25V to 2.65V
(typical) for 0% to 100% PWM duty cycle. The TC649
automatically suspends fan operation when measured
temperature (V ) is below a user programmed
IN
minimum setting (V ). An integrated Start-up Timer
AS
ensures reliable motor start-up at turn-on, coming out
of shutdown mode, auto-shutdown mode or following a
transient fault.
Available Tools
• Fan Controller Demonstration Board (TC642DEMO)
• Fan Controller Evaluation Kit (TC642EV)
In normal fan operation, a pulse train is present at
SENSE (Pin 5). The TC649 features Microchip
TM
Technology’s proprietary FanSense
technology for
increasing system reliability. A missing pulse detector
monitors this pin during fan operation. A stalled, open
or unconnected fan causes the TC649 to trigger its
Start-up Timer once. If the fault persists, the FAULT
output goes low, and the device is latched in its shut-
down mode. See Section 5.0, “Typical Applications”,
for more information and system design guidelines.
The TC649 is available in the 8-pin PDIP, SOIC and
MSOP packages and is available in the industrial and
extended commercial temperature ranges.
2002 Microchip Technology Inc.
DS21449C-page 1
TC649
Functional Block Diagram
TC649
V
IN
V
DD
–
+
PWM
Control
Logic
V
OUT
C
F
3 x T
Timer
PWM
Clock
Generator
–
FAULT
Start-up
Timer
V
AS
+
–
SHDN
Missing
Pulse
Detect
+
+
V
SHDN
–
SENSE
10k
GND
70mV (typ.)
DS21449C-page 2
2002 Microchip Technology Inc.
TC649
*Stresses above those listed under "Absolute Maximum Rat-
ings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at
these or any other conditions above those indicated in the
operation sections of the specifications is not implied. Expo-
sure to absolute maximum rating conditions for extended peri-
ods may affect device reliability.
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings*
Supply Voltage ......................................................... 6V
Input Voltage, Any Pin.... (GND – 0.3V) to (V +0.3V)
DD
Package Thermal Resistance:
PDIP (R ) ............................................125°C/W
θJA
SOIC (R )............................................155°C/W
θJA
MSOP (R ) ..........................................200°C/W
θJA
Specified Temperature Range ........... -40°C to +125°C
Storage Temperature Range.............. -65°C to +150°C
DC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise specified, TMIN ≤ TA ≤ TMAX, VDD = 3.0V to 5.5V.
Symbol
VDD
IDD
Parameter
Supply Voltage
Supply Current, Operating
Min
Typ
Max
Units
Test Conditions
3.0
—
—
0.5
5.5
1.0
V
mA Pins 6, 7 Open,
CF = 1 µF, VIN = VC(MAX)
IDD(SHDN)
Supply Current, Shutdown/
Auto-shutdown Mode
VIN, VAS Input Leakage
—
25
—
—
µA Pins 6, 7 Open; Note 1
CF =1 µF, VIN = 0.35V
IIN
-1.0
+1.0
µA
VOUT Output
tR
tF
tSHDN
VOUT Rise Time
VOUT Fall Time
Pulse Width (On VIN) to Clear Fault
Mode
—
—
30
—
—
—
50
50
—
µsec IOH = 5 mA, Note 1
µsec IOL = 1 mA, Note 1
µsec VSHDN, VHYST
Specifications, Note 1
IOL
IOH
Sink Current at VOUT Output
Source Current at VOUT Output
1.0
5.0
—
—
—
—
mA VOL = 10% of VDD
mA VOH = 80% of VDD
SENSE Input
VTH(SENSE) SENSE Input threshold Voltage with
Respect to GND
50
70
90
mV Note 1
FAULT Output
VOL
tMP
tSTART
tDIAG
Output Low Voltage
Missing Pulse Detector Timer
Start-up Timer
—
—
—
—
—
0.3
—
—
V
IOL = 2.5 mA
32/F
32/F
3/F
Sec CF = 1.0 µF
Sec CF = 1.0 µF
Sec CF = 1.0 µF
Diagnostic Timer
—
VIN, VAS Inputs
VC(MAX)
VC(SPAN)
VAS
Voltage at VIN for 100% Duty Cycle
VC(MAX) - VC(MIN)
Auto-shutdown Threshold
Voltage applied to VIN to Release
Reset/Shutdown
2.5
2.65
1.4
—
2.8
1.5
VC(MAX)
VDD x 0.13
V
V
V
V
1.3
VC(MAX) -VC(SPAN)
—
VSHDN
—
VREL
Voltage applied to VIN to Release
Reset Mode
VDD x 0.19
—
—
V
VDD = 5V,
See Figure 5-11
VHYST
VHAS
Hysteresis on VSHDN, VREL
Hysteresis on Auto-shutdown
Comparator
—
—
0.01 x VDD
70
—
—
V
mV
Pulse Width Modulator
FOSC
PWM Frequency
26
30
34
Hz CF = 1.0 µF
Note 1: Ensured by design, not tested.
2002 Microchip Technology Inc.
DS21449C-page 3
TC649
2.3
Analog Input (V
)
2.0
PIN DESCRIPTIONS
AS
An external resistor divider connected to the V input
The descriptions of the pins are listed in Table 2-1.
AS
sets the auto-shutdown threshold. Auto-shutdown
occurs when V ≤ V . The fan is automatically
IN
AS
TABLE 2-1:
Pin No. Symbol
PIN FUNCTION TABLE
Descriptiion
Analog Input
restarted when V ≥ (V + V ). See Section 5.0,
HAS
IN
AS
“Typical Applications”, for more details.
1
2
3
4
5
6
7
8
V
IN
2.4
Ground (GND)
C
Analog Output
Analog Input
F
GND denotes the ground terminal.
V
AS
GND
Ground Terminal
2.5
Analog Input (SENSE)
SENSE Analog Input
FAULT Digital (Open Collector) Output
Pulses are detected at the SENSE pin as fan rotation
chops the current through a sense resistor (R ).
SENSE
V
Digital Output
OUT
The absence of pulses indicates
a fault. See
V
Power Supply Input
Section 5.0, “Typical Applications”, for more details.
DD
2.1
Analog Input (V )
2.6
Digital Output (FAULT)
IN
The thermistor network (or other temperature sensor)
The FAULT line goes low to indicate a fault condition.
When FAULT goes low due to a fan fault condition, the
device is latched in shutdown mode until deliberately
cleared or until power is cycled.
connects to the V input. A voltage range of 1.25V to
IN
2.65V (typical) on this pin drives an active duty cycle of
0% to 100% on the V
pin. The TC649 enters shut-
OUT
down mode when V ≤ V
During shutdown, the
SHDN.
IN
2.7
Digital Output (V
)
FAULT output is inactive, and supply current falls to
25 µA (typical). The TC649 exits shutdown mode when
OUT
is an active high complimentary output that drives
V
OUT
V
≥ V
. See Section 5.0, “Typical Applications”, for
REL
IN
the base of an external NPN transistor (via an appropri-
ate base resistor) or the gate of an N-channel
MOSFET. This output has asymmetrical drive (see
Section 1.0, “Electrical Characteristics”).
details.
2.2
Analog Output (C )
F
C is the positive terminal for the PWM ramp generator
F
2.8
Power Supply Input (V
)
timing capacitor. The recommended C is 1 µF for
DD
may be independent of the fan’s power supply
F
30 Hz PWM operation.
V
DD
(see Section 1.0, “Electrical Characteristics”).
DS21449C-page 4
2002 Microchip Technology Inc.
TC649
3.5
FAULT Output
3.0
3.1
DETAILED DESCRIPTION
PWM
Pulses appearing at SENSE due to the PWM turning
on are blanked, and the remaining pulses are filtered
by a missing pulse detector. If consecutive pulses are
not detected for thirty-two PWM cycles ( 1 Sec if
The PWM circuit consists of a ramp generator and
threshold detector. The frequency of the PWM is
determined by the value of the capacitor connected to
C = 1 µF), the Diagnostic Timer is activated, and
F
OUT
V
is driven high continuously for three PWM cycles
the C input. A frequency of 30 Hz is recommended for
F
( 100 msec if C = 1 µF). If a pulse is not detected
most applications (C = 1 µF). The PWM is also the
F
F
within this window, the Start-up Timer is triggered (see
Section 3.3, “Start-up Timer”). This should clear a tran-
sient fault condition. If the missing pulse detector times
out again, the PWM is stopped and FAULT goes low.
When FAULT is activated due to this condition, the
device is latched in shutdown mode and will remain off
indefinitely. The TC649 is thus prevented from
attempting to drive a fan under catastrophic fault
conditions.
time base for the Start-up Timer (see Section 3.3,
“Start-up Timer”). The PWM voltage control range is
1.25V to 2.65V (typical) for 0% to 100% output duty
cycle.
3.2
VOUT Output
The V
pin is designed to drive a low cost transistor
OUT
or MOSFET as the low side power switching element in
the system. Various examples of driver circuits will be
shown throughout the datasheet. This output has
asymmetric complementary drive and is optimized for
driving NPN transistors or N-channel MOSFETs. Since
the system relies on PWM rather than linear control,
the power dissipation in the power switch is kept to a
minimum. Generally, very small devices (TO-92 or SOT
packages) will suffice.
One of two things will restore operation: Cycling power
off and then on again; or pulling V below V
and
SHDN
IN
releasing it to a level above V
. When one of these
REL
two conditions is satisfied, the normal start-up cycle is
triggered and operation will resume, provided the fault
has been cleared.
3.6
Auto-Shutdown Mode
3.3
Start-Up Timer
If the voltage on V becomes less than the voltage on
IN
V
, the fan is automatically shut off (auto-shutdown
AS
To ensure reliable fan start-up, the Start-up Timer turns
mode). The TC649 exits auto-shutdown mode when
the voltage on V becomes higher than the voltage on
the V
output on for 32 cycles of the PWM whenever
OUT
IN
the fan is started from the off state. This occurs at
V
by V
(the auto-shutdown hysteresis voltage,
HAS
AS
power-up and when coming out of shutdown or auto-
shutdown mode. If the PWM frequency is 30 Hz (C =
see Figure 3-1). The Start-up Timer is triggered and
normal operation is resumed upon exiting auto-shut-
down mode. The FAULT output is unconditionally
inactive in auto-shutdown mode.
F
1 µF) the resulting start-up time will be approximately
one second. If a fan fault is detected (see Section 3.5,
FAULT Output), the Diagnostic Timer is triggered once,
followed by the Start-up Timer. If the fault persists, the
device is shut down (see Section 3.5, FAULT Output).
3.4
SENSE Input
(FanSense™ Technology)
The SENSE input (Pin 5) is connected to a low value
current sensing resistor in the ground return leg of the
fan circuit. During normal fan operation, commutation
occurs as each pole of the fan is energized. This
causes brief interruptions in the fan current, seen as
pulses across the sense resistor. If the device is not in
shutdown or auto-shutdown mode, and pulses are not
appearing at the SENSE input, a fault exists.
The short, rapid change in fan current (high dl/dt)
causes a corresponding dV/dt across the sense
resistor,
R
.
The waveform on
R
is
SENSE
SENSE
differentiated and converted to a logic-level pulse-train
by C
and the internal signal processing circuitry.
SENSE
The presence and frequency of this pulse-train is a
direct indication of fan operation. See Section 5.0,
“Typical Applications”, for more details.
2002 Microchip Technology Inc.
DS21449C-page 5
TC649
TC649
Status
Normal
Operation
Auto-Shutdown
Mode
Normal
Operation
Shut-
Down
Normal
Operation
HI
2.6V
V
+ V
V
AS
HAS
AS
TEMP.
1.2V
t
RESET
V
IN
V
REL
V
SHDN
LO
GND
TIME
FIGURE 3-1:
TC649 Nominal Operation.
If a fan fault has occurred and the device has latched
itself into shutdown mode, performing a reset will not
3.7 Shutdown Mode (RESET)
If an unconditional shutdown and/or device reset is
desired, the TC649 may be placed in shutdown mode
clear the fault unless V > (V + V
). If V is not
IN
IN
AS
HAS
greater than V + V
upon exiting shutdown mode,
HAS
AS
by forcing V to a logic low (i.e., V < V ) (see
SHDN
IN
IN
the fan will not be restarted, and there will be no way to
establish that the fan fault has been cleared. To ensure
that a complete reset takes place, the user’s circuitry
Figure 3-1). In this mode, all functions cease and the
FAULT output is unconditionally inactive. The TC649
should not be shut down unless all heat producing activ-
ity in the system is at a negligible level. The TC649 exits
must ensure that V > (V + V ) when the device
HAS
IN
AS
is released from shutdown mode. A recommended
algorithm for management of the TC649 by a host
microcontroller or other external circuitry is given in
Section 5.0, “Typical Applications”. A small amount of
shutdown mode when V becomes greater than V
,
REL
IN
the release voltage.
Entering shutdown mode also performs a complete
device reset. Shutdown mode resets the TC649 into its
power-up state. The Start-up and Fault Timers and any
current faults are cleared. FAULT is unconditionally
inactive in shutdown mode. Upon exiting shutdown
hysteresis, typically one percent of V
= 5.0V), is designed into the V
(50mV at V
DD
DD
/V
threshold.
SHDN REL
The levels specified for V
and V
in Section 1.0,
SHDN
REL
“Electrical Characteristics”, include this hysteresis plus
adequate margin to account for normal variations in the
absolute value of the threshold and hysteresis.
mode (V > V
), the Start-up Timer will be triggered
IN
REL
and normal operation will resume, assuming no fault
conditions exist and V > (V + V ).
IN
AS
HAS
CAUTION: The fan will remain off as long as the V
IN
pin is being held low or V < V + V .
HAS
Note: If V < V when the device exits shut-
IN
AS
IN
AS
down mode, the fan will not restart, but will
be in auto-shutdown mode.
DS21449C-page 6
2002 Microchip Technology Inc.
TC649
4.3
Fan Fault
4.0
SYSTEM BEHAVIOR
Fan Fault is an infinite loop wherein the TC649 is
The flowcharts describing the TC649’s behavioral
algorithm are shown in Figure 4-1. They can be
summarized as follows:
latched in shutdown mode. This mode can only be
released by a reset (i.e., V being brought below
IN
HAS
V
, then above (V + V
) or by power-cycling).
SHDN
AS
4.1
Power-Up
(1) While in this state, FAULT is latched on (low) and
the V output is disabled.
OUT
(1) Assuming the device is not being held in shutdown
or auto-shutdown mode (V > V )...
(2) A reset sequence applied to the V pin will exit the
IN
AS
IN
loop to Power-up.
(3) End.
(2) Turn V
output on for 32 cycles of the PWM
OUT
clock. This ensures that the fan will start from a
dead stop.
(3) During this Start-up Timer, if a fan pulse is
detected, branch to Normal Operation; if none are
received…
(4) Activate the 32-cycle Start-up Timer one more
time and look for fan pulse; if a fan pulse is
detected, proceed to Normal Operation; if none
are received…
(5) Proceed to Fan Fault.
(6) End.
4.2
Normal Operation
Normal Operation is an endless loop which may only
be exited by entering shutdown mode, auto-shutdown
mode or Fan Fault. The loop can be thought of as exe-
cuting at the frequency of the oscillator and PWM.
(1) Reset the missing pulse detector.
(2) Is TC649 in shutdown or auto-shutdown mode? If
so…
a. V
duty cycle goes to zero.
OUT
b. FAULT is disabled.
c. Exit the loop and wait for V > (V + V ) to
HAS
IN
AS
resume operation.
(3) Drive V
to a duty cycle proportional to V on a
IN
OUT
cycle by cycle basis.
(4) If a fan pulse is detected, branch back to the start
of the loop (1).
(5) If the missing pulse detector times out …
(6) Activate the 3-cycle Diagnostic Timer and look for
pulses; if a fan pulse is detected, branch back to
the start of the loop (1); if none are received…
(7) Activate the 32-cycle Start-up Timer and look for
pulses; if a fan pulse is detected, branch back to
the start of the loop (1); if none are received…
(8) Quit Normal Operation and go to Fan Fault.
(9) End.
2002 Microchip Technology Inc.
DS21449C-page 7
TC649
Normal
Operation
Power-Up
Clear Missing
Pulse Detector
Power-on
Reset
FAULT = 1
Yes
Shutdown
= 0
V
< V
SHDN
IN
V
OUT
Yes
Shutdown
= 0
V
< V ?
SHDN
IN
No
V
OUT
No
V
V
REL
>
?
IN
No
V
> V
REL
No
IN
Yes
Yes
Auto
Shutdown
Yes
Power-Up
Auto-
Shutdown
V
< V ?
AS
IN
Yes
V
< V
AS
?
V
= 0
IN
OUT
V
= 0
OUT
No
No
V
>
)
HAS
No
IN
+ V
(V
AS
V
>
No
IN
V
(V
V
+
OUT
Proportional
to V
)
AS
HAS
Yes
Hot Start
IN
Yes
Hot Start
Fire Start-up
Timer
(1 SEC)
Yes
No
Fan Pulse
Detected?
M.P.D.
Expired?
Fire Start-up
Yes
Fire
No
No
Timer
Fan Pulse
Detected?
(1 SEC)
Diagnostic
Timer
(100msec)
Yes
Yes
Fan Pulse
Detected?
No
Fire Start-up
Timer
(1 Sec)
Yes
Fan Pulse
Detected?
Normal
Operation
No
Fan Fault
Yes
Fan Pulse
Detected?
No
Fan Fault
Fan Fault
FAULT = 0,
V
= 0
OUT
No
Auto-Shutdown
FAULT = 1,
No
Cycling
Power
V
< V
?
IN
SHDN
V
= 0
OUT
Yes
Yes
Yes
No
V
> V
V
> (V + V
AS
)?
?
REL
IN
IN
HAS
No
Yes
Power-Up
FIGURE 4-1:
TC649 Behavioral Algorithm Flowchart.
DS21449C-page 8
2002 Microchip Technology Inc.
TC649
The TC642 demonstration and prototyping board
(TC642DEMO) and the TC642 Evaluation Kit
(TC642EV) provide working examples of TC649 cir-
cuits and prototyping aids. The TC642DEMO is a
printed circuit board optimized for small size and ease
of inclusion into system prototypes. The TC642EV is a
larger board intended for benchtop development and
analysis. At the very least, anyone contemplating a
design using the TC649 should consult the documen-
tation for both TC642EV (DS21403) and TC642DEMO
(DS21401).Figure 5-1 shows the base schematic for
the TC642DEMO.
5.0
TYPICAL APPLICATIONS
Designing with the TC649 involves the following:
(1) The temperature sensor network must be
configured to deliver 1.25V to 2.65V on V for 0%
IN
to 100% of the temperature range to be regulated.
(2) The auto-shutdown temperature must be set
with a voltage divider on V
.
AS
(3) The output drive transistor and associated circuitry
must be selected.
(4) The SENSE network, R
and C
, must
SENSE
SENSE
be designed for maximum efficiency while
delivering adequate signal amplitude.
(5) If shutdown capability is desired, the drive require-
ments of the external signal or circuit must be
considered.
+5V*
+
C
B
+12V
1 µF
R
1
NTC
Fan
Q
Shutdown**
V
DD
V
IN
C
B
0.01 µF
R
2
Fan Fault
Shutdown
FAULT
1
+5V
R
BASE
TC649
V
R
OUT
3
V
AS
C
B
SENSE
0.01 µF
C
SENSE
C
R
4
F
R
SENSE
C
F
1 µF
GND
Notes: *See cautions regarding Latch-up Considerations in Section 5.0, "Typical Applications".
**Optional. See Section 5.0, "Typical Applications" for details.
FIGURE 5-1:
Typical Application Circuit.
2002 Microchip Technology Inc.
DS21449C-page 9
TC649
EQUATION
5.1
Temperature Sensor Design
The temperature signal connected to V must output a
V
x R
DD 2
IN
= V(T )
1
voltage in the range of 1.25V to 2.65V (typical) for 0%
to 100% of the temperature range of interest. The
circuit in Figure 5-2 illustrates a convenient way to
provide this signal.
R
(T ) + R
1 2
TEMP
V
x R
2
DD
= V(T )
2
R
(T ) + R
2 2
TEMP
V
DD
Where T and T define the temperature range of the
1
2
circuit. R
is the parallel equivalent of the
TEMP
thermistor and R at those temperatures.
I
DIV
1
More information about thermistors may be obtained
from AN679, “Temperature Sensing Technologies”,
and AN685, “Thermistors in Single Supply
Temperature Sensing Circuit”, which can be down-
R
=100 kΩ
1
RT
NTC
Thermistor
1
loaded
from
Microchip’s
website
at
V
IN
100 kΩ @ 25˚C
www.microchip.com.
R
2
= 23.2 kΩ
5.2
Auto-Shutdown Temperature
Design
A voltage divider on V sets the temperature at which
AS
the part is automatically shut down if the sensed tem-
FIGURE 5-2:
Temperature Sensing
perature at V drops below the set temperature at V
IN
AS
AS
Circuit.
(i.e. V < V ). As with the V input, 1.25V to 2.65V
IN
IN
(typ.) corresponds to the temperature range of interest
from T to T , respectively. Assuming that the temper-
Figure 5-2 shows a simple temperature dependent
voltage divider circuit. RT is a conventional NTC ther-
1
2
1
ature sensor network designed above is linearly related
mistor, while R and R are standard resistors. The
1
2
to temperature, the shutdown temperature T
related to T and T by:
is
supply voltage, V , is divided between R and the
AS
DD
2
parallel combination of RT and R . For convenience,
2
1
1
1
the parallel combination of RT and R will be referred
1
1
to as R
. The resistance of the thermistor at various
EQUATION
TEMP
temperatures is obtained from the manufacturer’s
specifications. Thermistors are often referred to in
terms of their resistance at 25°C.
V
T
- 1.25
- T
2.65V - 1.25V
T - T
AS
=
AS
1
2
1
Generally, the thermistor shown in Figure 5-2 is a non-
1.4V
linear device with a negative temperature coefficient
V
=
(
(T - T ) + 1.25
AS 1
)
AS
T - T
2
1
(also called an NTC thermistor). In Figure 5-2, R is
1
used to linearize the thermistor temperature response
For example, if 1.25V and 2.65V at V corresponds to
and R is used to produce a positive temperature
IN
2
2
a temperature range of T = 0°C to T = 125°C, and the
coefficient at the V node. As an added benefit, this
1
IN
auto-shutdown temperature desired is 25°C, then V
voltage is:
configuration produces an output voltage delta of 1.4V,
AS
which is well within the range of the V
C(SPAN)
specification of the TC649. A 100 kΩ NTC thermistor is
selected for this application in order to keep I
minimum.
at a
EQUATION
DIV
1.4V
For the voltage range at V to be equal to 1.25V to
IN
(25 - 0) + 1.25 = 1.53V
V
=
AS
2.65V, the temperature range of this configuration is
0°C to 50°C. If a different temperature range is required
(125 - 0)
from this circuit, R should be chosen to equal the
1
The V voltage may be set using a simple resistor
divider, as is shown in Figure 5-3.
AS
resistance value of the thermistor at the center of this
new temperature range. It is suggested that a maxi-
mum temperature range of 50°C be used with this cir-
cuit due to thermistor linearity limitations. With this
change, R is adjusted according to the following
2
equations:
DS21449C-page 10
2002 Microchip Technology Inc.
TC649
5.3
Operations at Low Duty Cycle
V
DD
One boundary condition which may impact the
selection of the minimum fan speed is the irregular
activation of the Diagnostic Timer due to the TC649
“missing” fan commutation pulses at low speeds. This
is a natural consequence of low PWM duty cycles (typ-
ically 25% or less). Recall that the SENSE function
detects commutation of the fan as disturbances in the
R
R
1
I
IN
I
V
AS
DIV
current through R
. These can only occur when
SENSE
the fan is energized (i.e., V
is “on”). At very low duty
OUT
cycles, the V
output is “off” most of the time. The fan
2
OUT
may be rotating normally, but the commutation events
are occurring during the PWM’s off-time.
GND
The phase relationship between the fan’s commutation
and the PWM edges tends to “walk around” as the
system operates. At certain points, the TC649 may fail
to capture a pulse within the 32-cycle missing pulse
detector window. If this happens, the 3-cycle
FIGURE 5-3:
V
Circuit.
AS
Per Section 1.0, “Electrical Characteristics”, the leak-
age current at the V pin is no more than 1 µA. It is
AS
Diagnostic Timer will be activated, the V
output will
conservative to design for a divider current, I , of
OUT
DIV
be active continuously for three cycles and, if the fan is
operating normally, a pulse will be detected. If all is
well, the system will return to normal operation. There
is no harm in this behavior, but it may be audible to the
user as the fan accelerates briefly when the Diagnostic
100 µA. If V = 5.0V then:
DD
EQUATION
5.0V
– 4
I
= 1e
A
, therefore
Timer fires. For this reason, it is recommended that V
DIV
AS
R + R
1
2
be set no lower than 1.8V.
5.0V
R + R =
= 50,000Ω = 50 kΩ
1
2
™
–4
5.4
FanSense Network
1e A
(RSENSE and CSENSE
)
We can further specify R and R by the condition that
1
2
The FanSense network, comprised of R
and
SENSE
the divider voltage is equal to our desired V . This
AS
C
, allows the TC649 to detect commutation of
SENSE
yields the following:
the fan motor (FanSense™ technology). This network
can be thought of as a differentiator and threshold
EQUATION
detector. The function of R
is to convert the fan
SENSE
current into a voltage. C
serves to AC-couple this
SENSE
V
x R
2
DD
voltage signal and provide a ground-referenced input to
the SENSE pin. Designing a proper SENSE network is
V
=
AS
R + R
1
2
simply a matter of scaling R
to provide the nec-
SENSE
essary amount of gain (i.e., the current-to-voltage con-
version ratio). 0.1 µF ceramic capacitor is
recommended for C
Solving for the relationship between R and R results
1
2
A
in:
. Smaller values require
SENSE
larger sense resistors, and higher value capacitors are
bulkier and more expensive. Using a 0.1 µF capacitor
EQUATION
5 -1.53
1.53
V
- V
AS
results in reasonable values for R
. Figure 5-4
DD
SENSE
R = R x
= R x
1
2
2
illustrates a typical SENSE network. Figure 5-5 shows
the waveforms observed using a typical SENSE net-
work.
V
AS
In the case of this example, R = (2.27) R . Substituting
1
2
this relationship back into the V equation above
AS
yields the resistor values:
R = 15.3 kΩ, and
2
R = 34.7 kΩ
1
In this case, the standard values of 34.8 kΩ and
15.4 kΩ are very close to the calculated values and
would be more than adequate.
2002 Microchip Technology Inc.
DS21449C-page 11
TC649
TABLE 5-1:
Nominal Fan Current (mA)
RSENSE VS. FAN CURRENT
V
DD
R
(Ω)
SENSE
9.1
4.7
3.0
2.4
2.0
1.8
1.5
1.3
1.2
1.0
50
100
150
200
250
300
350
400
450
500
Fan
R
BASE
V
OUT
Q
R
1
SENSE
C
SENSE
(0.1 µF Typ.)
SENSE
5.5
Output Drive Transistor Selection
The TC649 is designed to drive an external transistor
GND
or MOSFET for modulating power to the fan. This is
shown as Q in Figures 5-1, 5-4, 5-6, 5-7, 5-8 and 5-9.
1
FIGURE 5-4:
SENSE Network.
The V
pin has a minimum source current of 5 mA
OUT
and a minimum sink current of 1 mA. Bipolar transistors
or MOSFETs may be used as the power switching
element as shown in Figure 5-6. When high current
gain is needed to drive larger fans, two transistors may
be used in a Darlington configuration. These circuit
topologies are shown in Figure 5-6: (a) shows a single
NPN transistor used as the switching element; (b)
illustrates the Darlington pair; and (c) shows an N-
channel MOSFET.
One major advantage of the TC649’s PWM control
scheme versus linear speed control is that the power
dissipation in the pass element is kept very low. Gener-
ally, low cost devices in very small packages, such as
TO-92 or SOT, can be used effectively. For fans with
nominal operating currents of no more than 200 mA, a
single transistor usually suffices. Above 200 mA, the
Darlington or MOSFET solution is recommended. For
the fan sensing function to work correctly, it is
imperative that the pass transistor be fully saturated
when “on”.
Tek Run: 10.0kS/s Sample
[
T
]
Waveform @ Sense Resistor
Waveform @ Sense Pin
GND
1
2
90mV
50mV
GND
T
M5.00ms
142mV
Ch1 100mV
Ch2
100mV
Ch1
FIGURE 5-5:
Table 5-1 lists the recommended values of R
SENSE Waveforms.
SENSE
based on the nominal operating current of the fan. Note
that the current draw specified by the fan manufacturer
may be a worst-case rating for near-stall conditions and
may not be the fan’s nominal operating current. The
values in Table 5-1 refer to actual average operating
current. If the fan current falls between two of the val-
ues listed, use the higher resistor value. The end result
of employing Table 5-1 is that the signal developed
across the sense resistor is approximately 450 mV in
amplitude.
DS21449C-page 12
2002 Microchip Technology Inc.
TC649
Table 5-2 gives examples of some commonly available
transistors and MOSFETs. This table should be used
as a guide only since there are many transistors and
MOSFETs which will work just as well as those listed.
The critical issues when choosing a device to use as
be enough to saturate the transistor when conducting
the full fan current (transistor must have sufficient
gain); (3) the V
voltage must be high enough to suf-
OUT
ficiently drive the gate of the MOSFET to minimize the
R
of the device; (4) rated fan current draw must
DS(on)
Q1 are: (1) the breakdown voltage (V
or V
be within the transistor's/MOSFET's current handling
capability; and (5) power dissipation must be kept
within the limits of the chosen device.
(BR)CEO
DS
(MOSFET)) must be large enough to withstand the
highest voltage applied to the fan (Note: This will occur
when the fan is off); (2) 5 mA of base drive current must
V
DD
V
V
DD
DD
Fan
Fan
Fan
R
BASE
R
BASE
V
OUT
Q
1
V
Q
1
OUT
Q
1
V
OUT
Q
2
R
R
SENSE
SENSE
R
SENSE
GND
C) N-Channel MOSFET
GND
a) Single Bipolar Transistor
GND
b) Darlington Transistor Pair
FIGURE 5-6:
Output Drive Transistor Circuit Topologies.
TABLE 5-2:
Device
TRANSISTORS AND MOSFETS FOR Q (V = 5V)
1
DD
Max. V
/V
V
/V
Fan Current
(mA)
Suggested
BE(sat) GS
CEO DS
Package
Min. H
FE
(V)
(V)
R
(Ω)
BASE
800
800
301
Note 1
Note 1
Note 1
Note 1
MMBT2222A
MPS2222A
MPS6602
SI2302
MGSF1N02E
SI4410
SOT-23
TO-92
TO-92
SOT-23
SOT-23
SO-8
1.2
1.2
1.2
2.5
2.5
4.5
4.5
50
50
50
NA
NA
NA
NA
40
40
40
20
20
30
60
150
150
500
500
500
1000
500
SI2308
SOT-23
Note 1: A series gate resistor may be used in order to control the MOSFET turn-on and turn-off times.
2002 Microchip Technology Inc.
DS21449C-page 13
TC649
A base-current limiting resistor is required with bipolar
transistors (Figure 5-7). The correct value for this
resistor can be determined as follows:
V
DD
V
V
V
= VRSENSE + V
+ V
RBASE
OH
BE(SAT)
x R
SENSE
= I
RSENSE
RBASE
BASE
FAN
= R
x I
BASE
BASE
Fan
I
= I
/ h
FAN FE
V
is specified as 80% of V
in Section 1.0,
DD
OH
“Electrical Characteristics”; V
is given in the cho-
BE(SAT)
R
BASE
sen transistor data sheet. It is now possible to solve for
R
V
= 80% V
DD
OH
Q
R
1
.
–
+
BE
+
BASE
V
R
BASE
–
V
(SAT)
+
EQUATION
V
- V
- V
BE(SAT) RSENSE
BASE
OH
V
R
R
=
SENSE
–
SENSE
BASE
I
Some applications benefit from the fan being powered
from a negative supply to keep motor noise out of the
positive supply rails. This can be accomplished as
GND
shown in Figure 5-8, with zener diode D offsetting the
1
FIGURE 5-7:
BASE
Circuit For Determining
-12V power supply voltage, holding transistor Q off
1
R
.
when V
is low. When V
is high, the voltage at
OUT
OUT
OUT
the anode of D increases by V
, causing Q to turn
1
1
on. Operation is otherwise the same as in the case of
fan operation from +12V.
+5V
V
DD
R *
2
2.2 kΩ
V
OUT
D
1
12.0V
Zener
FAN
TC649
Q *
1
R *
4
R *
3
10 kΩ
2.2 Ω
GND
-12V
Note: * Value depends on the specific application and is shown for example only.
See Section 5.0, "Typical Applications", for more details.
FIGURE 5-8:
Powering the Fan from a -12V Supply.
DS21449C-page 14
2002 Microchip Technology Inc.
TC649
a high impedance source (such as a thermistor). Addi-
5.6
Latch-up Considerations
tionally, the V input should be bypassed with a 1 µF
DD
As with any CMOS IC, the potential exists for latch-up
if signals are applied to the device which are outside
the power supply range. This is of particular concern
during power-up if the external circuitry (such as the
capacitor with grounds being kept as short as possible.
To keep fan noise off the TC649 ground pin, individual
ground returns for the TC649 and the low side of the
fan current sense resistor should be used.
sensor network, V divider or shutdown circuit) are
AS
powered by a supply different from that of the TC649.
Design Example
Care should be taken to ensure that the TC649’s V
DD
Step 1. Calculate R and R based on using an NTC
supply powers up first. If possible, the networks
attached to V and V should connect to the V sup-
1
2
having a resistance of 10 kΩ at T
(25°C)
MIN
IN
AS
DD
and 4.65 kΩ at T
(45°C) (see Figure 5-9).
ply at the same physical location as the IC itself. Even
if the IC and any external networks are powered by the
same supply, physical separation of the connecting
points can result in enough parasitic capacitance and/
or inductance in the power supply connections to delay
one power supply “routing” versus another.
MAX
R = 20.5 kΩ
1
R = 3.83 kΩ
2
Step 2. Set auto-shutdown Level.
V
= 1.8V.
AS
Limit the divider current to 100 µA
R = 33 kΩ
R = 18 kΩ
5.7
Power Supply Routing and
Bypassing
5
6
Step 3. Design the output circuit.
Noise present on the V and V inputs may cause
IN
AS
Maximum fan motor current = 250 mA.
erroneous operation of the FAULT output. As a result,
these inputs should be bypassed with a 0.01 µF
capacitor mounted as close to the package as possible.
Q beta is chosen at 50 from which
1
R = 800 Ω.
7
This is especially true of V , which is usually drive from
IN
+5V
+12V
+5V
C
1 µF
B
NTC
10 kΩ
@ 25˚C
R
1
Open-
Drain
Device
20.5 kΩ
4
8
Fan
1
RESET
Shutdown
V
V
DD
GND
IN
C
B
R
2
0.01 µF
6
Fan Fault
Q
1
FAULT
3.83 kΩ
(Optional)
R
800 Ω
+5V
7
TC649
7
5
V
R
33 kΩ
OUT
5
3
V
AS
C
B
SENSE
0.01 µF
C
0.1 µF
2
R
18 kΩ
SENSE
6
C
F
R
SENSE
2.2 Ω
C
1 µF
1
FIGURE 5-9:
Design Example.
2002 Microchip Technology Inc.
DS21449C-page 15
TC649
(5% tolerance) form a crude 3-bit DAC that translates
this 3-bit code from the processor's outputs into a 1.6V
DC control signal. A monolithic DAC or digital pot may
be used instead of the circuit shown in Figure 5-10.
5.8
TC649 as a Microcontroller
Peripheral
In a system containing a microcontroller or other host
intelligence, the TC649 can be effectively managed as
a CPU peripheral. Routine fan control functions can be
performed by the TC649 without processor interven-
tion. The microcontroller receives temperature data
from one or more points throughout the system. It
calculates a fan operating speed based on an algorithm
specifically designed for the application at hand. The
processor controls fan speed using complementary
With V set at 1.8V, the TC649 enters auto-shutdown
AS
when the processor's output code is 000[B]. Output
codes 001[B] to 111[B] operate the fan from roughly
40% to 100% of full speed. An open-drain output from
the processor (I/O0) can be used to reset the TC649
following detection of a fault condition. The FAULT out-
put can be connected to the processor's interrupt input
or to another I/O pin for polled operation.
port bits I/O1 through I/O3. Resistors R through R
1
6
.
+12V
+5V
(RESET) (Optional)
Open-Drain
Output
I/O0
I/O1
+5V
Fan
1
R
110 kΩ
(MSB)
1
2
+
1µF
8
V
V
DD
C
IN
B
C
B
R
2
1 µF
R
800 Ω
Analog or Digital
Temperature Data from
One or more Sensors
CMOS
Outputs
240 kΩ
9
.01 µF
I/O2
I/O3
7
R
3
360 kΩ
V
C
OUT
2N2222A
F
+5V
TC649
R
33 kΩ
7
R
18 kΩ
4
R
10
3
B
CMOS
Microcontroller
6
5
(LSB)
R
5
V
AS
10 kΩ
FAULT
C
1.5 kΩ
+5V
+5V
R
8
.01µF
4
0.1 µF
18 kΩ
R
6
GND
SENSE
1 kΩ
R
11
2.2 Ω
GND
INT
FIGURE 5-10:
TC649 as a Microcontroller Peripheral.
vs.Temperature
V
RELEASE
1.0
V
= 5.5V
= 5.0V
DD
0.9
0.8
0.7
V
DD
V
= 4.0V
DD
0.6
0.5
0.4
V
= 3.0V
DD
0˚C
25˚C
85˚C
TEMPERATURE
VRELEASE vs. Temperature.
FIGURE 5-11:
DS21449C-page 16
2002 Microchip Technology Inc.
TC649
6.0
6.1
PACKAGING INFORMATION
Package Marking Information
8-Lead PDIP (300 mil)
Example:
XXXXXXXX
NNN
TC649VPA
025
YYWW
0215
8-Lead SOIC (150 mil)
Example:
XXXXXXXX
YYWW
TC649VOA
0215
NNN
025
Example:
8-Lead MSOP
TC649E
XXXXXX
YWWNNN
215025
Legend: XX...X Customer specific information*
YY
WW
NNN
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Note:
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line thus limiting the number of available characters
for customer specific information.
*
Standard marking consists of Microchip part number, year code, week code, traceability code (facility
code, mask rev#, and assembly code). For marking beyond this, certain price adders apply. Please check
with your Microchip Sales Office.
2002 Microchip Technology Inc.
DS21449C-page 17
TC649
8-Lead Plastic Dual In-line (P) – 300 mil (PDIP)
E1
D
2
n
1
α
E
A2
A
L
c
A1
β
B1
B
p
eB
Units
Dimension Limits
INCHES*
NOM
MILLIMETERS
MIN
MAX
MIN
NOM
8
MAX
n
p
A
A2
A1
E
E1
D
L
c
B1
B
Number of Pins
Pitch
Top to Seating Plane
Molded Package Thickness
Base to Seating Plane
Shoulder to Shoulder Width
Molded Package Width
Overall Length
Tip to Seating Plane
Lead Thickness
Upper Lead Width
Lower Lead Width
Overall Row Spacing
Mold Draft Angle Top
Mold Draft Angle Bottom
8
.100
.155
.130
2.54
3.94
3.30
.140
.170
.145
3.56
2.92
4.32
3.68
.115
.015
.300
.240
.360
.125
.008
.045
.014
.310
5
0.38
7.62
6.10
9.14
3.18
0.20
1.14
0.36
7.87
5
.313
.250
.373
.130
.012
.058
.018
.370
10
.325
.260
.385
.135
.015
.070
.022
.430
15
7.94
6.35
9.46
3.30
0.29
1.46
0.46
9.40
10
8.26
6.60
9.78
3.43
0.38
1.78
0.56
10.92
15
§
eB
α
β
5
10
15
5
10
15
* Controlling Parameter
§ Significant Characteristic
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: MS-001
Drawing No. C04-018
DS21449C-page 18
2002 Microchip Technology Inc.
TC649
8-Lead Plastic Small Outline (SN) – Narrow, 150 mil (SOIC)
E
E1
p
D
2
B
n
1
h
α
45×
c
A2
A
f
β
L
A1
Units
INCHES*
NOM
MILLIMETERS
Dimension Limits
MIN
MAX
MIN
NOM
8
MAX
n
p
A
A2
A1
E
E1
D
h
L
f
Number of Pins
Pitch
Overall Height
8
.050
.061
.056
.007
.237
.154
.193
.015
.025
4
1.27
.053
.069
1.35
1.32
1.55
1.42
0.18
6.02
3.91
4.90
0.38
0.62
4
1.75
1.55
0.25
6.20
3.99
5.00
0.51
0.76
8
Molded Package Thickness
Standoff
.052
.004
.228
.146
.189
.010
.019
0
.061
.010
.244
.157
.197
.020
.030
8
§
0.10
5.79
3.71
4.80
0.25
0.48
0
Overall Width
Molded Package Width
Overall Length
Chamfer Distance
Foot Length
Foot Angle
c
Lead Thickness
Lead Width
.008
.013
0
.009
.017
12
.010
.020
15
0.20
0.33
0
0.23
0.42
12
0.25
0.51
15
B
α
β
Mold Draft Angle Top
Mold Draft Angle Bottom
0
12
15
0
12
15
* Controlling Parameter
§ Significant Characteristic
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: MS-012
Drawing No. C04-057
2002 Microchip Technology Inc.
DS21449C-page 19
TC649
8-Lead Plastic Micro Small Outline Package (MS) (MSOP)
E
p
E1
D
2
B
n
1
α
A2
A
c
φ
A1
(F)
L
β
Units
Dimension Limits
INCHES
NOM
MILLIMETERS*
NOM
MIN
MAX
MIN
MAX
n
p
Number of Pins
Pitch
8
8
.026
0.65
Overall Height
Molded Package Thickness
A
A2
A1
E
E1
D
.044
1.18
.030
.034
.038
.006
.200
.122
.122
.028
.039
0.76
0.05
0.86
0.97
0.15
.5.08
3.10
3.10
0.70
1.00
Standoff
§
.002
.184
.114
.114
.016
.035
Overall Width
Molded Package Width
Overall Length
Foot Length
Footprint (Reference)
Foot Angle
.193
.118
.118
.022
.037
4.90
3.00
3.00
0.55
0.95
4.67
2.90
2.90
0.40
0.90
L
F
φ
0
6
0
6
c
Lead Thickness
Lead Width
Mold Draft Angle Top
Mold Draft Angle Bottom
.004
.010
.006
.012
.008
.016
0.10
0.25
0.15
0.30
0.20
0.40
B
α
β
7
7
7
7
*Controlling Parameter
§ Significant Characteristic
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not
exceed. 010" (0.254mm) per side.
Drawing No. C04-111
DS21449C-page 20
2002 Microchip Technology Inc.
TC649
6.2
Taping Form
Component Taping Orientation for 8-Pin SOIC (Narrow) Devices
User Direction of Feed
PIN 1
W
P
Standard Reel Component Orientation
for TR Suffix Device
Carrier Tape, Number of Components Per Reel and Reel Size
Package
Carrier Width (W)
Pitch (P)
Part Per Full Reel
Reel Size
8-Pin SOIC (N)
12 mm
8 mm
2500
13 in
Component Taping Orientation for 8-Pin MSOP Devices
User Direction of Feed
PIN 1
W
P
Standard Reel Component Orientation
for TR Suffix Device
Carrier Tape, Number of Components Per Reel and Reel Size
Package
Carrier Width (W)
Pitch (P)
Part Per Full Reel
Reel Size
8-Pin MSOP
12 mm
8 mm
2500
13 in
2002 Microchip Technology Inc.
DS21449C-page 21
TC649
NOTES:
DS21449C-page 22
2002 Microchip Technology Inc.
TC649
ON-LINE SUPPORT
Microchip provides on-line support on the Microchip
World Wide Web site.
SYSTEMS INFORMATION AND
UPGRADE HOT LINE
The Systems Information and Upgrade Line provides
system users a listing of the latest versions of all of
Microchip's development systems software products.
Plus, this line provides information on how customers
can receive the most current upgrade kits.The Hot Line
Numbers are:
1-800-755-2345 for U.S. and most of Canada, and
1-480-792-7302 for the rest of the world.
The web site is used by Microchip as a means to make
files and information easily available to customers. To
view the site, the user must have access to the Internet
®
®
and a web browser, such as Netscape or Microsoft
Internet Explorer. Files are also available for FTP
download from our FTP site.
ConnectingtotheMicrochipInternetWebSite
The Microchip web site is available at the following
URL:
092002
www.microchip.com
The file transfer site is available by using an FTP ser-
vice to connect to:
ftp://ftp.microchip.com
The web site and file transfer site provide a variety of
services. Users may download files for the latest
Development Tools, Data Sheets, Application Notes,
User's Guides, Articles and Sample Programs. A vari-
ety of Microchip specific business information is also
available, including listings of Microchip sales offices,
distributors and factory representatives. Other data
available for consideration is:
• Latest Microchip Press Releases
• Technical Support Section with Frequently Asked
Questions
• Design Tips
• Device Errata
• Job Postings
• Microchip Consultant Program Member Listing
• Links to other useful web sites related to
Microchip Products
• Conferences for products, Development Systems,
technical information and more
• Listing of seminars and events
2002 Microchip Technology Inc.
DS21449C-page23
TC649
READER RESPONSE
It is our intention to provide you with the best documentation possible to ensure successful use of your Microchip prod-
uct. If you wish to provide your comments on organization, clarity, subject matter, and ways in which our documentation
can better serve you, please FAX your comments to the Technical Publications Manager at (480) 792-4150.
Please list the following information, and use this outline to provide us with your comments about this document.
To:
Technical Publications Manager
Reader Response
Total Pages Sent ________
RE:
From:
Name
Company
Address
City / State / ZIP / Country
Telephone: (_______) _________ - _________
FAX: (______) _________ - _________
Application (optional):
Would you like a reply?
Y
N
Literature Number:
DS21449C
Device:
TC649
Questions:
1. What are the best features of this document?
2. How does this document meet your hardware and software development needs?
3. Do you find the organization of this document easy to follow? If not, why?
4. What additions to the document do you think would enhance the structure and subject?
5. What deletions from the document could be made without affecting the overall usefulness?
6. Is there any incorrect or misleading information (what and where)?
7. How would you improve this document?
DS21449C-page24
2002 Microchip Technology Inc.
TC649
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
Device
X
/XX
Examples:
Temperature Package
Range
a)
b)
c)
d)
TC649VOA: PWM Fan Speed Controller w/
Auto-Shutdown and Fault Detection, SOIC
package.
TC649VUA: PWM Fan Speed Controller w/
Auto-Shutdown and Fault Detection, MSOP
package
TC649VPA: PWM Fan Speed Controller w/
Auto-Shutdown and Fault Detection, PDIP
package.
TC649EOATR: PWM Fan Speed Controller w/
Auto-Shutdown and Fault Detection, SOIC
package, Tape and Reel.
Device:
TC649:
PWM Fan Speed Controller w/Auto Shutdown
and Fault Detection
Temperature Range:
Package:
V
E
=
=
0°C to +85°C
-40°C to +85°C
PA
OA
UA
=
=
=
Plastic DIP (300 mil Body), 8-lead *
Plastic SOIC, (150 mil Body), 8-lead
Plastic Micro Small Outline (MSOP), 8-lead
* PDIP package is only offered in the V temp range.
Sales and Support
Data Sheets
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recom-
mended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:
1. Your local Microchip sales office
2. The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277
3. The Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.
New Customer Notification System
Register on our web site (www.microchip.com/cn) to receive the most current information on our products.
2002 Microchip Technology Inc.
DS21449C-page25
TC649
NOTES:
DS21449C-page 26
2002 Microchip Technology Inc.
Information contained in this publication regarding device
applications and the like is intended through suggestion only
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
No representation or warranty is given and no liability is
assumed by Microchip Technology Incorporated with respect
to the accuracy or use of such information, or infringement of
patents or other intellectual property rights arising from such
use or otherwise. Use of Microchip’s products as critical com-
ponents in life support systems is not authorized except with
express written approval by Microchip. No licenses are con-
veyed, implicitly or otherwise, under any intellectual property
rights.
Trademarks
The Microchip name and logo, the Microchip logo, KEELOQ,
MPLAB, PIC, PICmicro, PICSTART and PRO MATE are
registered trademarks of Microchip Technology Incorporated
in the U.S.A. and other countries.
FilterLab, microID, MXDEV, MXLAB, PICMASTER, SEEVAL
and The Embedded Control Solutions Company are
registered trademarks of Microchip Technology Incorporated
in the U.S.A.
dsPIC, dsPICDEM.net, ECONOMONITOR, FanSense,
FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP,
ICEPIC, microPort, Migratable Memory, MPASM, MPLIB,
MPLINK, MPSIM, PICC, PICDEM, PICDEM.net, rfPIC, Select
Mode and Total Endurance are trademarks of Microchip
Technology Incorporated in the U.S.A. and other countries.
Serialized Quick Turn Programming (SQTP) is a service mark
of Microchip Technology Incorporated in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2002, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Microchip received QS-9000 quality system
certification for its worldwide headquarters,
design and wafer fabrication facilities in
Chandler and Tempe, Arizona in July 1999
and Mountain View, California in March 2002.
The Company’s quality system processes and
procedures are QS-9000 compliant for its
®
PICmicro 8-bit MCUs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals,
non-volatile memory and analog products. In
addition, Microchip’s quality system for the
design and manufacture of development
systems is ISO 9001 certified.
2002 Microchip Technology Inc.
DS21449C - page 27
M
WORLDWIDE SALES AND SERVICE
Japan
AMERICAS
ASIA/PACIFIC
Microchip Technology Japan K.K.
Benex S-1 6F
Corporate Office
Australia
2355 West Chandler Blvd.
Microchip Technology Australia Pty Ltd
Suite 22, 41 Rawson Street
Epping 2121, NSW
3-18-20, Shinyokohama
Kohoku-Ku, Yokohama-shi
Kanagawa, 222-0033, Japan
Tel: 81-45-471- 6166 Fax: 81-45-471-6122
Chandler, AZ 85224-6199
Tel: 480-792-7200 Fax: 480-792-7277
Technical Support: 480-792-7627
Web Address: http://www.microchip.com
Australia
Tel: 61-2-9868-6733 Fax: 61-2-9868-6755
Korea
Rocky Mountain
China - Beijing
Microchip Technology Korea
168-1, Youngbo Bldg. 3 Floor
Samsung-Dong, Kangnam-Ku
Seoul, Korea 135-882
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Chandler, AZ 85224-6199
Tel: 480-792-7966 Fax: 480-792-4338
Microchip Technology Consulting (Shanghai)
Co., Ltd., Beijing Liaison Office
Unit 915
Bei Hai Wan Tai Bldg.
Tel: 82-2-554-7200 Fax: 82-2-558-5934
Atlanta
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Tel: 86-10-85282100 Fax: 86-10-85282104
500 Sugar Mill Road, Suite 200B
Atlanta, GA 30350
Singapore
Microchip Technology Singapore Pte Ltd.
200 Middle Road
Tel: 770-640-0034 Fax: 770-640-0307
China - Chengdu
#07-02 Prime Centre
Boston
Microchip Technology Consulting (Shanghai)
Co., Ltd., Chengdu Liaison Office
Rm. 2401, 24th Floor,
Singapore, 188980
2 Lan Drive, Suite 120
Westford, MA 01886
Tel: 978-692-3848 Fax: 978-692-3821
Tel: 65-6334-8870 Fax: 65-6334-8850
Taiwan
Ming Xing Financial Tower
Microchip Technology (Barbados) Inc.,
Taiwan Branch
Chicago
No. 88 TIDU Street
333 Pierce Road, Suite 180
Itasca, IL 60143
Chengdu 610016, China
11F-3, No. 207
Tel: 86-28-86766200 Fax: 86-28-86766599
Tung Hua North Road
Taipei, 105, Taiwan
Tel: 630-285-0071 Fax: 630-285-0075
China - Fuzhou
Dallas
Microchip Technology Consulting (Shanghai)
Co., Ltd., Fuzhou Liaison Office
Unit 28F, World Trade Plaza
Tel: 886-2-2717-7175 Fax: 886-2-2545-0139
4570 Westgrove Drive, Suite 160
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No. 71 Wusi Road
EUROPE
Austria
Detroit
Fuzhou 350001, China
Tri-Atria Office Building
Tel: 86-591-7503506 Fax: 86-591-7503521
Microchip Technology Austria GmbH
Durisolstrasse 2
32255 Northwestern Highway, Suite 190
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Tel: 248-538-2250 Fax: 248-538-2260
China - Shanghai
Microchip Technology Consulting (Shanghai)
Co., Ltd.
A-4600 Wels
Austria
Kokomo
Room 701, Bldg. B
Tel: 43-7242-2244-399
Fax: 43-7242-2244-393
Denmark
2767 S. Albright Road
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Tel: 765-864-8360 Fax: 765-864-8387
Los Angeles
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Lautrup hoj 1-3
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18201 Von Karman, Suite 1090
Irvine, CA 92612
China - Shenzhen
Microchip Technology Consulting (Shanghai)
Co., Ltd., Shenzhen Liaison Office
Rm. 1315, 13/F, Shenzhen Kerry Centre,
Renminnan Lu
Ballerup DK-2750 Denmark
Tel: 949-263-1888 Fax: 949-263-1338
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New York
France
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Parc d’Activite du Moulin de Massy
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Tel: 86-755-2350361 Fax: 86-755-2366086
San Jose
China - Hong Kong SAR
Batiment A - ler Etage
Microchip Technology Inc.
2107 North First Street, Suite 590
San Jose, CA 95131
Microchip Technology Hongkong Ltd.
Unit 901-6, Tower 2, Metroplaza
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91300 Massy, France
Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79
Germany
Tel: 408-436-7950 Fax: 408-436-7955
Kwai Fong, N.T., Hong Kong
Microchip Technology GmbH
Steinheilstrasse 10
Tel: 852-2401-1200 Fax: 852-2401-3431
Toronto
6285 Northam Drive, Suite 108
Mississauga, Ontario L4V 1X5, Canada
Tel: 905-673-0699 Fax: 905-673-6509
India
D-85737 Ismaning, Germany
Tel: 49-89-627-144 0 Fax: 49-89-627-144-44
Microchip Technology Inc.
India Liaison Office
Italy
Divyasree Chambers
Microchip Technology SRL
Centro Direzionale Colleoni
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Tel: 91-80-2290061 Fax: 91-80-2290062
Milan, Italy
Tel: 39-039-65791-1 Fax: 39-039-6899883
United Kingdom
Microchip Ltd.
505 Eskdale Road
Winnersh Triangle
Wokingham
Berkshire, England RG41 5TU
Tel: 44 118 921 5869 Fax: 44-118 921-5820
08/01/02
DS21449C-page 28
2002 Microchip Technology Inc.
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