TC647BEUA713 [MICROCHIP]

PWM Fan Speed Controllers With Minimum Fan Speed, Fan Restart and FanSense⑩ Technology for Fault Detection; PWM风扇速度控制器,带有风扇的最低转速,风扇重启和FanSense⑩技术故障检测
TC647BEUA713
型号: TC647BEUA713
厂家: MICROCHIP    MICROCHIP
描述:

PWM Fan Speed Controllers With Minimum Fan Speed, Fan Restart and FanSense⑩ Technology for Fault Detection
PWM风扇速度控制器,带有风扇的最低转速,风扇重启和FanSense⑩技术故障检测

风扇 控制器
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TC642B/TC647B  
M
PWM Fan Speed Controllers With Minimum Fan Speed,  
Fan Restart and FanSense™ Technology for Fault Detection  
Features  
Description  
Temperature-Proportional Fan Speed for Acoustic  
The TC642B/TC647B devices are new versions of the  
existing TC642/TC647 fan speed controllers. These  
devices are switch mode, fan speed controllers that  
incorporate a new fan auto-restart function. Tempera-  
ture-proportional speed control is accomplished using  
pulse width modulation. A thermistor (or other voltage  
Noise Reduction and Longer Fan Life  
• Efficient PWM Fan Drive  
• 3.0V to 5.5V Supply Range:  
- Fan Voltage Independent of TC642B/TC647B  
Supply Voltage  
output temperature sensor) connected to the V input  
IN  
- Supports any Fan Voltage  
supplies the required control voltage of 1.20V to 2.60V  
(typical) for 0% to 100% PWM duty cycle. Minimum fan  
• FanSenseFault Detection Circuit Protects  
Against Fan Failure and Aids System Testing  
speed is set by a simple resistor divider on the V  
MIN  
input. An integrated Start-Up Timer ensures reliable  
motor start-up at turn-on, coming out of shutdown  
mode or following a transient fault. A logic-low applied  
• Shutdown Mode for "Green" Systems  
• Supports Low Cost NTC/PTC Thermistors  
• Over-Temperature Indication (TC642B only)  
• Fan Auto-Restart  
to V  
(pin 3) causes fan shutdown.  
MIN  
The TC642B and TC647B also feature Microchip  
• Space-Saving 8-Pin MSOP Package  
Technology's proprietary FanSense technology for  
increasing system reliability. In normal fan operation, a  
pulse train is present at SENSE (pin 5). A missing-  
pulse detector monitors this pin during fan operation. A  
stalled, open or unconnected fan causes the TC642B/  
Applications  
• Personal Computers & Servers  
• LCD Projectors  
• Datacom & Telecom Equipment  
• Fan Trays  
TC647B device to turn the V  
output on full (100%  
OUT  
duty cycle). If the fault persists (a fan current pulse is  
not detected within a 32/f period), the FAULT output  
• File Servers  
• General Purpose Fan Speed Control  
goes low. Even with the FAULT output low, the V  
OUT  
output is on full during the fan fault condition in order to  
attempt to restart the fan. FAULT is also asserted if the  
PWM reaches 100% duty cycle (TC642B only), indicat-  
ing that maximum cooling capability has been reached  
and a possible overheating condition exists.  
Package Types  
MSOP, PDIP, SOIC  
The TC642B and TC647B devices are available in 8-pin  
plastic MSOP, SOIC and PDIP packages. The specified  
temperature range of these devices is -40 to +85ºC.  
V
1
2
3
4
8
7
6
5
V
V
IN  
DD  
C
F
OUT  
TC642B  
TC647B  
V
FAULT  
MIN  
GND  
SENSE  
2003 Microchip Technology Inc.  
DS21756B-page 1  
TC642B/TC647B  
Functional Block Diagram  
TC642B/TC647B  
V
OTF  
V
V
V
IN  
DD  
Note  
Note: The V  
comparator  
OTF  
is for the TC642B device only.  
Control  
Logic  
C
3xT  
F
PWM  
Timer  
OUT  
Clock  
Generator  
Start-up  
Timer  
V
MIN  
FAULT  
Missing  
Pulse  
V
SHDN  
Detect  
SENSE  
10 k  
GND  
70 mV  
(typ)  
DS21756B-page 2  
2003 Microchip Technology Inc.  
TC642B/TC647B  
1.0  
ELECTRICAL  
PIN FUNCTION TABLE  
CHARACTERISTICS  
Name  
Function  
Analog Input  
Absolute Maximum Ratings †  
V
IN  
C
Analog Output  
Analog Input  
Supply Voltage (VDD) .......................................................6.0V  
Input Voltage, Any Pin................(GND - 0.3V) to (VDD +0.3V)  
Operating Temperature Range ....................- 40°C to +125°C  
Maximum Junction Temperature, TJ ...........................+150°C  
ESD Protection on all pins ........................................... > 3 kV  
Notice: Stresses above those listed under “Maximum  
Ratings” may cause permanent damage to the device. This is  
a stress rating only and functional operation of the device at  
those or any other conditions above those indicated in the  
operational listings of this specification is not implied. Expo-  
sure to maximum rating conditions for extended periods may  
affect device reliability.  
F
V
MIN  
GND  
Ground  
SENSE  
FAULT  
Analog Input  
Digital (Open-Drain) Output  
Digital Output  
V
OUT  
V
Power Supply Input  
DD  
ELECTRICAL SPECIFICATIONS  
Electrical Specifications: Unless otherwise specified, all limits are specified for -40°C < TA < +85°C, VDD = 3.0V to 5.5V.  
Parameters  
Supply Voltage  
Sym  
Min  
Typ  
Max  
Units  
Conditions  
VDD  
IDD  
3.0  
5.5  
V
Supply Current, Operating  
200  
400  
µA  
Pins 6, 7 Open,  
CF = 1 µF, VIN = VC(MAX)  
Supply Current, Shutdown Mode  
IDD(SHDN)  
30  
µA  
Pins 6, 7 Open,  
CF = 1 µF, VMIN = 0.35V  
VOUT Output  
Sink Current at VOUT Output  
Source Current at VOUT Output  
VIN, VMIN Inputs  
IOL  
IOH  
1.0  
5.0  
mA VOL = 10% of VDD  
mA VOH = 80% of VDD  
Input Voltage at VIN or VMIN for 100%  
PWM Duty Cycle  
VC(MAX)  
VOTF  
2.45  
2.60  
2.75  
V
Over-Temperature Indication  
Threshold  
VC(MAX)  
20 mV  
+
V
For TC642B Only  
For TC642B Only  
Over-Temperature Indication  
Threshold Hysteresis  
VOTF-HYS  
80  
mV  
VC(MAX) - VC(MIN)  
VC(SPAN)  
VMIN  
1.3  
1.4  
1.5  
V
V
Minimum Speed Threshold  
VC(MAX)  
VC(SPAN)  
-
VC(MAX)  
Voltage Applied to VMIN to Ensure  
Shutdown Mode  
VSHDN  
VREL  
VDD x 0.13  
V
V
Voltage Applied to VMIN to Release  
Shutdown Mode  
VDD x 0.19  
VDD = 5V  
Hysteresis on VSHDN, VREL  
VIN, VMIN Input Leakage  
Pulse-Width Modulator  
PWM Frequency  
VHYST  
IIN  
0.03 x VDD  
V
- 1.0  
+1.0  
µA  
Note 1  
fPWM  
26  
30  
34  
Hz  
CF = 1.0 µF  
Note 1: Ensured by design, tested during characterization.  
2: For VDD < 3.7V, tSTARTUP and tMP timers are typically 13/f.  
2003 Microchip Technology Inc.  
DS21756B-page 3  
TC642B/TC647B  
ELECTRICAL SPECIFICATIONS (CONTINUED)  
Electrical Specifications: Unless otherwise specified, all limits are specified for -40°C < TA < +85°C, VDD = 3.0V to 5.5V.  
Parameters  
SENSE Input  
Sym  
Min  
Typ  
Max  
Units  
Conditions  
SENSE Input Threshold Voltage with  
Respect to GND  
VTH(SENSE)  
tBLANK  
50  
70  
90  
mV  
Blanking time to ignore pulse due to  
3.0  
µsec  
VOUT turn-on  
FAULT Output  
Output Low Voltage  
VOL  
tMP  
32/f  
32/f  
3/f  
0.3  
V
IOL = 2.5 mA  
Missing Pulse Detector Timer  
Start-Up Timer  
sec Note 2  
sec Note 2  
sec  
tSTARTUP  
tDIAG  
Diagnostic Timer  
Note 1: Ensured by design, tested during characterization.  
2: For VDD < 3.7V, tSTARTUP and tMP timers are typically 13/f.  
TEMPERATURE SPECIFICATIONS  
Electrical Characteristics: Unless otherwise noted, all parameters apply at VDD = 3.0V to 5.5V  
Parameters  
Symbol  
Min  
Typ  
Max  
Units  
Conditions  
Temperature Ranges:  
Specified Temperature Range  
Operating Temperature Range  
Storage Temperature Range  
TA  
TA  
TA  
-40  
-40  
-65  
+85  
+125  
+150  
°C  
°C  
°C  
Thermal Package Resistances:  
Thermal Package Resistance, 8-Pin MSOP  
Thermal Package Resistance, 8-Pin SOIC  
Thermal Package Resistance, 8-Pin PDIP  
θJA  
θJA  
θJA  
200  
155  
125  
°C/W  
°C/W  
°C/W  
DS21756B-page 4  
2003 Microchip Technology Inc.  
TC642B/TC647B  
TIMING SPECIFICATIONS  
tSTARTUP  
V
OUT  
FAULT  
SENSE  
FIGURE 1-1:  
TC642B/TC647B Start-Up Timing.  
33.3 msec (C = 1 µF)  
F
t
DIAG  
t
t
MP  
MP  
V
OUT  
FAULT  
SENSE  
FIGURE 1-2:  
Fan Fault Occurrence.  
t
MP  
V
OUT  
FAULT  
Minimum 16 pulses  
SENSE  
FIGURE 1-3:  
Recovery From Fan Fault.  
2003 Microchip Technology Inc.  
DS21756B-page 5  
TC642B/TC647B  
C
1 µF  
C
0.1 µF  
2
1
+
-
V
DD  
8
R
1
V
DD  
1
K
R
3
V
6
IN  
7
C
3
V
OUT  
+
-
0.1 µF  
V
C
0.1 µF  
IN  
8
Current  
limited  
voltage  
source  
+
-
R
V
3
2
DD  
TC642B  
TC647B  
V
MIN  
R
5
C
4
K
4
+
0.1 µF  
V
6
5
MIN  
-
FAULT  
Current  
limited  
voltage  
source  
+
-
2
C
R
F
4
SENSE  
GND  
4
K
K
2
1
R
3
V
SENSE  
(pulse voltage source)  
C
C
5
0.1 µF  
C
7
6
.01 µF  
1 µF  
Note: C and C are adjusted to get the necessary 1 µF value.  
5
7
FIGURE 1-4:  
TC642B/TC647B Electrical Characteristics Test Circuit.  
DS21756B-page 6  
2003 Microchip Technology Inc.  
TC642B/TC647B  
2.0  
TYPICAL PERFORMANCE CURVES  
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of  
samples and are provided for informational purposes only. The performance characteristics listed herein  
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified  
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.  
Note: Unless otherwise indicated, V = 5V, T = +25°C.  
DD  
A
30.50  
30.00  
29.50  
29.00  
28.50  
165  
160  
155  
150  
145  
140  
135  
130  
125  
Pins 6 & 7 Open  
CF = 1 µF  
CF = 1.0PF  
VDD = 5.5V  
VDD = 3.0V  
VDD = 5.5V  
VDD = 3.0V  
-40 -25 -10  
5
20 35 50 65 80 95 110 125  
Temperature (ºC)  
-40 -25 -10  
5
20 35 50 65 80 95 110 125  
Temperature (ºC)  
FIGURE 2-1:  
I
vs. Temperature.  
FIGURE 2-4:  
PWM Frequency vs.  
DD  
Temperature.  
16  
14  
12  
10  
170  
Pins 6 & 7 Open  
F = 1 µF  
165  
160  
155  
150  
145  
140  
135  
130  
125  
C
VDD = 5.0V  
TA = +125ºC  
TA = +90ºC  
VDD = 5.5V  
VDD = 4.0V  
8
6
4
2
0
VDD = 3.0V  
TA = -5ºC  
TA = -40ºC  
0
50 100 150 200 250 300 350 400 450 500 550 600  
VOL (mV)  
3
3.5  
4
4.5  
5
5.5  
VDD (V)  
FIGURE 2-2:  
OL  
PWM Sink Current (I ) vs.  
OL  
FIGURE 2-5:  
I
vs. V  
.
DD  
DD  
V
.
16  
14  
12  
10  
8
30  
27  
24  
21  
18  
VDD = 5.5V  
VDD = 5.0V  
VDD = 4.0V  
VDD = 5.5V  
VDD = 3.0V  
VDD = 3.0V  
6
4
Pins 6 & 7 Open  
MIN = 0V  
2
V
0
15  
0
100  
200  
300  
400  
500  
600  
700  
800  
-40 -25 -10  
5
20 35 50 65 80 95 110 125  
Temperature (ºC)  
VDD - VOH (mV)  
FIGURE 2-3:  
vs. V -V  
PWM Source Current (I  
)
FIGURE 2-6:  
I
Shutdown vs.  
OH  
DD  
.
Temperature.  
DD OH  
2003 Microchip Technology Inc.  
DS21756B-page 7  
TC642B/TC647B  
Note: Unless otherwise indicated, V = 5V, T = +25°C.  
DD  
A
70  
60  
50  
40  
30  
20  
10  
74.0  
73.5  
73.0  
72.5  
72.0  
71.5  
71.0  
70.5  
70.0  
69.5  
IOL = 2.5 mA  
VDD = 4.0V  
VDD = 3.0V  
VDD = 3.0V  
VDD = 4.0V  
VDD = 5.5V  
VDD = 5.0V  
VDD = 5.0V  
VDD = 5.5V  
-40 -25 -10  
5
20 35 50 65 80 95 110 125  
Temperature (ºC)  
-40 -25 -10  
5
20 35 50 65 80 95 110 125  
Temperature (ºC)  
FIGURE 2-7:  
FAULT V vs.  
FIGURE 2-10:  
Sense Threshold  
OL  
Temperature.  
(V  
) vs. Temperature.  
TH(SENSE)  
2.610  
2.600  
2.590  
2.580  
22  
20  
18  
16  
14  
12  
10  
8
VDD = 5.5V  
VDD = 5.0V  
VDD = 5.0V  
VDD = 5.5V  
VDD = 4.0V  
VDD = 3.0V  
VDD = 3.0V  
6
4
2
0
CF = 1 µF  
-40 -25 -10  
2.570  
0
50  
100  
150  
200  
250  
300  
350  
400  
5
20 35 50 65 80 95 110 125  
Temperature (ºC)  
VOL (mV)  
FIGURE 2-8:  
V
vs. Temperature.  
FIGURE 2-11:  
FAULT I vs. V  
.
OL  
C(MAX)  
OL  
1.220  
45.00  
40.00  
35.00  
30.00  
25.00  
20.00  
15.00  
CF = 1 µF  
VOH = 0.8VDD  
VDD = 5.0V  
VDD = 5.5V  
VDD = 4.0V  
1.210  
1.200  
1.190  
1.180  
VDD = 5.0V  
VDD = 3.0V  
VDD = 3.0V  
10.00  
5.00  
-40 -25 -10  
5
20 35 50 65 80 95 110 125  
Temperature (ºC)  
-40 -25 -10  
5
20 35 50 65 80 95 110 125  
Temperature (ºC)  
FIGURE 2-9:  
V
vs. Temperature.  
FIGURE 2-12:  
PWM Source Current (I  
)
C(MIN)  
OH  
vs. Temperature.  
DS21756B-page 8  
2003 Microchip Technology Inc.  
TC642B/TC647B  
Note: Unless otherwise indicated, V = 5V, T = +25°C.  
DD  
A
30  
25  
20  
15  
10  
5
2.630  
2.625  
2.620  
2.615  
2.610  
2.605  
2.600  
2.595  
VOL = 0.1VDD  
VDD = 5.0V  
VDD = 5.5V  
VDD = 5.0V  
VDD = 5.5V  
VDD = 4.0V  
VDD = 3.0V  
VDD = 3.0V  
0
-40 -25 -10  
5
20 35 50 65 80 95 110 125  
Temperature (ºC)  
-40 -25 -10  
5
20 35 50 65 80 95 110 125  
Temperature (ºC)  
FIGURE 2-13:  
PWM Sink Current (I ) vs.  
FIGURE 2-16:  
V
Threshold vs.  
OL  
OTF  
Temperature.  
Temperature.  
0.80  
0.75  
0.70  
100  
95  
90  
85  
80  
75  
VDD = 5.5V  
VDD = 5.0V  
0.65  
0.60  
0.55  
0.50  
0.45  
0.40  
0.35  
0.30  
VDD = 5.5V  
VDD = 4.0V  
VDD = 3.0V  
VDD = 3.0V  
70  
-40 -25 -10  
5
20 35 50 65 80 95 110 125  
-40 -25 -10  
5
20 35 50 65 80 95 110 125  
Temperature (ºC)  
Temperature (ºC)  
FIGURE 2-14:  
V
Threshold vs.  
FIGURE 2-17:  
Over-Temperature  
SHDN  
Temperature.  
Hysteresis (V  
) vs. Temperature.  
OTF-HYS  
1.00  
0.95  
0.90  
0.85  
0.80  
0.75  
0.70  
0.65  
0.60  
0.55  
0.50  
0.45  
0.40  
VDD = 5.5V  
VDD = 5.0V  
VDD = 4.0V  
VDD = 3.0V  
-40 -25 -10  
5
20 35 50 65 80 95 110 125  
Temperature (ºC)  
FIGURE 2-15:  
V
Threshold vs.  
REL  
Temperature.  
2003 Microchip Technology Inc.  
DS21756B-page 9  
TC642B/TC647B  
3.5  
Digital (Open-Drain) Output  
(FAULT)  
3.0  
PIN FUNCTIONS  
The description of the pins are given in Table 3-1.  
The FAULT line goes low to indicate a fault condition.  
When FAULT goes low due to a fan fault, the output will  
remain low until the fan fault condition has been  
removed (16 pulses have been detected at the SENSE  
pin in a 32/f period). For the TC642B device, the FAULT  
TABLE 3-1:  
PIN FUNCTION TABLE  
Pin  
Name Function  
1
2
3
4
5
6
7
8
V
C
V
Analog Input  
Analog Output  
IN  
output will also be asserted when the V voltage  
IN  
F
reaches the V  
treshold of 2.62V (typical). This gives  
OTF  
Analog Input  
Ground  
MIN  
GND  
an over-temperature/100% fan speed indication.  
3.6  
Digital Output (V  
)
SENSE Analog Input  
FAULT Digital (Open-Drain) Output  
V
OUT  
V
is an active-high complimentary output and  
OUT  
Digital Output  
drives the base of an external NPN transistor (via an  
appropriate base resistor) or the gate of an N-channel  
MOSFET. This output has asymmetrical drive. During a  
OUT  
V
Power Supply Input  
DD  
fan fault condition, the V  
output is continuously on.  
OUT  
3.1  
Analog Input (V )  
IN  
3.7  
Power Supply Input (V  
)
DD  
The thermistor network (or other temperature sensor)  
connects to V . A voltage range of 1.20V to 2.60V (typ-  
The V pin with respect to GND provides power to the  
IN  
DD  
ical) on this pin drives an active duty cycle of 0% to  
device. This bias supply voltage may be independent of  
the fan power supply.  
100% on the V  
pin.  
OUT  
3.2  
Analog Output (C )  
F
C is the positive terminal for the PWM ramp generator  
F
timing capacitor. The recommended value for the C  
capacitor is 1.0 µF for 30 Hz PWM operation.  
F
3.3  
Analog Input (V  
)
MIN  
An external resistor divider connected to V  
sets the  
MIN  
minimum fan speed by fixing the minimum PWM duty  
cycle (1.20V to 2.60V = 0% to 100%, typical). The  
TC642B and TC647B devices enter shutdown mode  
when 0 V  
V  
. During shutdown, the FAULT  
SHDN  
MIN  
output is inactive and supply current falls to 30 µA  
(typical).  
3.4  
Analog Input (SENSE)  
Pulses are detected at SENSE as fan rotation chops  
the current through a sense resistor. The absence of  
pulses indicates a fan fault condition.  
DS21756B-page 10  
2003 Microchip Technology Inc.  
TC642B/TC647B  
special heatsinking to remove the power being  
dissipated in the package.  
The other advantage of the PWM approach is that the  
voltage being applied to the fan is always near 12V.  
This eliminates any concern about not supplying a high  
enough voltage to run the internal fan components,  
which is very relevant in linear fan speed control.  
4.0  
DEVICE OPERATION  
The TC642B/TC647B devices are a family of tempera-  
ture proportional, PWM mode, fan speed controllers.  
Features of the family include minimum fan speed, fan  
auto-shutdown mode, fan auto-restart, remote shut-  
down, over-temperature indication and fan fault  
detection.  
The TC642B/TC647B family is slightly different from  
the original TC64X family, which includes the TC642,  
TC646, TC647, TC648 and TC649 devices. Changes  
have been made to adjust the operation of the device  
during a fan fault condition.  
4.2  
PWM Fan Speed Control  
The TC642B and TC647B devices implement PWM fan  
speed control by varying the duty cycle of a fixed fre-  
quency pulse train. The duty cycle of a waveform is the  
on time divided by the total period of the pulse. For  
example, a 100 Hz waveform (10 ms) with an on time  
of 5.0 ms has a duty cycle of 50% (5.0 ms / 10.0 ms).  
This example is illustrated in Figure 4-1.  
The key change to the TC64XB family of devices  
(TC642B, TC647B, TC646B, TC648B, TC649B) is that  
the FAULT and V  
outputs no longer “latch” to a  
OUT  
state during a fan fault condition. The TC64XB family  
will continue to monitor the operation of the fan so that  
when the fan returns to normal operation, the fan speed  
controller will also return to normal operation (PWM  
mode). The operation and features of these devices  
are discussed in the following sections.  
t
4.1  
Fan Speed Control Methods  
t
t
on  
off  
The speed of a DC brushless fan is proportional to the  
voltage across it. This relationship will vary from fan to  
fan and should be characterized on an individual basis.  
The speed versus applied voltage relationship can then  
be used to set up the fan speed control algorithm.  
D = Duty Cycle  
D = t / t  
t = Period  
t = 1/f  
on  
f = Frequency  
There are two main methods for fan speed control. The  
first is pulse width modulation (PWM) and the second  
is linear. Using either method, the total system power  
requirement to run the fan is equal. The difference  
between the two methods is where the power is  
consumed.  
The following example compares the two methods for  
a 12V, 120 mA fan running at 50% speed. With 6V  
applied across the fan, the fan draws an average  
current of 68 mA.  
FIGURE 4-1:  
Waveform.  
Duty Cycle of a PWM  
The TC642B and TC647B generate a pulse train with a  
typical frequency of 30 Hz (C = 1 µF). The duty cycle  
F
can be varied from 0% to 100%. The pulse train gener-  
ated by the TC642B/TC647B device drives the gate of  
an external N-channel MOSFET or the base of an NPN  
transistor (shown in Figure 4-2). See Section 5.5, “Out-  
put Drive Device Selection”, for more information.  
Using a linear control method, there is 6V across the  
fan and 6V across the drive element. With 6V and  
68 mA, the drive element is dissipating 410 mW of  
power.  
Using the PWM approach, the fan voltage is modulated  
at a 50% duty cycle with most of the 12V being dropped  
across the fan. With 50% duty cycle, the fan draws an  
RMS current of 110 mA and an average current of  
12V  
FAN  
V
DD  
72 mA. Using a MOSFET with a 1 R  
(a fairly  
DS(on)  
D
S
typical value for this low current), the power dissipation  
Q
2
DRIVE  
V
TC642B  
TC647B  
in the drive element would be: 12 mW (Irms * R  
).  
OUT  
G
DS(on)  
Using a standard 2N2222A NPN transistor (assuming  
a Vce-sat of 0.8V), the power dissipation would be  
58 mW (Iavg* Vce-sat).  
GND  
FIGURE 4-2:  
The PWM approach to fan speed control results in  
much less power dissipation in the drive element,  
allowing smaller devices to be used while not requiring  
PWM Fan Drive.  
2003 Microchip Technology Inc.  
DS21756B-page 11  
TC642B/TC647B  
By modulating the voltage applied to the gate of the  
4.4  
PWM Frequency & Duty Cycle Control  
(C & V Pins)  
MOSFET (Q  
), the voltage that is applied to the  
DRIVE  
F
IN  
fan is also modulated. When the V  
pulse is high, the  
OUT  
The frequency of the PWM pulse train is controlled by  
the C pin. By attaching a capacitor to the C pin, the  
gate of the MOSFET is turned on, pulling the voltage at  
the drain of Q  
to zero volts. This places the full  
F
F
DRIVE  
frequency of the PWM pulse train can be set to the  
desired value. The typical PWM frequency for a 1.0 µF  
capacitor is 30 Hz. The frequency can be adjusted by  
12V across the fan for the t period of the pulse. When  
on  
the duty cycle of the drive pulse is 100% (full on,  
t
= t), the fan will run at full speed. As the duty cycle  
on  
raising or lowering the value of the capacitor. The C  
is decreased (pulse on time “t ” is lowered), the fan  
F
on  
pin functions as a ramp generator. The voltage at this  
pin will ramp from 1.20V to 2.60V (typically) as a saw-  
tooth waveform. An example of this is shown in  
Figure 4-3.  
will slow down proportionally. With the TC642B and  
TC647B devices, the duty cycle is controlled by either  
the V or V  
input, with the higher voltage setting the  
IN  
MIN  
duty cycle. This is described in more detail in Section  
5.5, “Output Drive Device Selection”.  
2.8  
CF = 1 µF  
VCMAX  
4.3  
Fan Start-up  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
Often overlooked in fan speed control is the actual start-  
up control period. When starting a fan from a non-oper-  
ating condition (fan speed is zero revolutions per minute  
(RPM)), the desired PWM duty cycle or average fan  
voltage can not be applied immediately. Since the fan is  
at a rest position, the fan’s inertia must be overcome to  
get it started. The best way to accomplish this is to apply  
the full rated voltage to the fan for a minimum of one  
second. This will ensure that in all operating environ-  
ments, the fan will start and operate properly. An exam-  
ple of the start-up timing is shown in Figure 1-1.  
VCMIN  
40  
0
20  
60  
80  
100  
Time (msec)  
FIGURE 4-3:  
The duty cycle of the PWM output is controlled by the  
voltage at the V input pin (or the V voltage, which-  
C Pin Voltage.  
F
A key feature of the TC642B/TC647B device is the  
start-up timer. When power is first applied to the device,  
(when the device is brought out of the shutdown mode  
IN  
MIN  
ever is greater). The duty cycle of the PWM output is  
of operation) the V  
output will go to a high state for  
OUT  
produced by comparing the voltage at the V pin to the  
IN  
32 PWM cycles (one second for C = 1 µF). This will  
F
voltage ramp at the C pin. When the voltage at the V  
F
IN  
drive the fan to full speed for this time-frame.  
pin is 1.20V, the duty cycle will be 0%. When the volt-  
During the start-up period, the SENSE pin is being  
monitored for fan pulses. If pulses are detected during  
this period, the fan speed controller will then move to  
PWM operation (see Section 4.5, “Minimum Fan  
Speed”, for more details on operation when coming out  
of start-up). If pulses are not detected during the start-  
up period, the start-up timer is activated again. If pulses  
are not detected at the SENSE pin during this addi-  
tional start-up period, the FAULT output will go low to  
indicate that a fan fault condition has occurred. See  
Section 4.7, “FAULT Output”, for more details.  
age at the V pin is 2.60V, the PWM duty cycle will be  
IN  
100% (these are both typical values). The V to PWM  
IN  
duty cycle relationship is shown in Figure 4-4.  
The lower value of 1.20V is referred to as V  
and  
CMIN  
the 2.60V threshold is referred to as V  
. A calcula-  
CMAX  
tion for duty cycle is shown in the equation below. The  
voltage range between V and V is character-  
CMIN  
CMAX  
ized as V  
and has a typical value of 1.4V with  
CSPAN  
minimum and maximum values of 1.3V and 1.5V,  
respectively.  
EQUATION  
PWM DUTY CYCLE  
(V - V ) * 100  
IN  
CMIN  
Duty Cycle (%) =  
V
- V  
CMIN  
CMAX  
DS21756B-page 12  
2003 Microchip Technology Inc.  
TC642B/TC647B  
If the voltage at the V pin falls below 1.76V, the duty  
IN  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
cycle of the V  
output will not decrease below the  
OUT  
40% value that is now set by the voltage at the V  
MIN  
pin. In this manner, the fan will continue to operate at  
40% speed even when the temperature (voltage at V )  
continues to decrease.  
IN  
For the TC642B and TC647B devices, the V  
pin is  
MIN  
also used as the shutdown pin. The V  
and V  
REL  
SHDN  
threshold voltages are characterized in the “Electrical  
Characteristics” table of Section 1.0. If the V  
pin  
MIN  
voltage is pulled below the V  
threshold, the device  
SHDN  
1
1.2  
1.4  
1.6  
1.8  
VIN (V)  
2
2.2  
2.4  
2.6  
2.8  
will shut down (V  
output goes to a low state, the  
OUT  
FAULT pin is inactive). If the voltage on the V  
pin  
MIN  
then rises above the release threshold (V  
), the  
REL  
FIGURE 4-4:  
V
voltage vs. PWM duty  
IN  
device will go through a Power-Up sequence. The  
Power-Up sequence is shown later in Figure 4-9.  
cycle(Typical).  
The PWM duty cycle is also controlled by the V  
See Section 4.5, “Minimum Speed (V  
more details on this function.  
pin  
MIN  
4.6  
V
OUT  
Output (PWM Output)  
Pin)”, for  
OUT  
output is a digital output designed for driving  
MIN  
The V  
the base of a transistor or the gate of a MOSFET. The  
4.5  
Minimum Speed (V  
Pin)  
MIN  
V
output is designed to be able to quickly raise the  
OUT  
base current or the gate voltage of the external drive  
device to its final value.  
For the TC642B and TC647B devices, pin 3 is the V  
pin. This pin is used for setting the minimum fan speed  
threshold.  
MIN  
When the device is in shutdown mode, the V  
output  
OUT  
is actively held low. The output can be varied from 0%  
The minimum fan speed function provides a way to set  
duty cycle (full off) to 100% duty cycle (full on). As pre-  
a threshold for a minimum duty cycle on the V  
out-  
OUT  
viously discussed, the duty cycle of the V  
output is  
OUT  
put. This in turn produces a minimum fan speed for the  
controlled via the V input voltage along with the V  
IN  
MIN  
user. The voltage range for the V pin is the same as  
MIN  
voltage.  
that for the V pin (1.20V to 2.60V). The voltage at the  
IN  
V
V
pin is set in this range so that as the voltage at the  
A base current-limiting resistor is required when using  
a transistor as the external drive device in order to limit  
MIN  
pin decreases below the V  
voltage, the output  
MIN  
IN  
duty cycle will be controlled by the V  
following equation can be used to determine the neces-  
sary voltage at V for a desired minimum duty cycle  
voltage. The  
the amount of drive current that is drawn from the V  
output.  
MIN  
OUT  
MIN  
The V  
output can be directly connected to the gate  
OUT  
on V  
.
OUT  
of an external MOSFET. One concern when doing this,  
though, is that the fast turn-off time of the fan drive  
MOSFET can cause a problem. The fan motor looks  
like an inductor. When the MOSFET is turned off  
quickly, the current in the fan wants to continue to flow  
in the same direction. This causes the voltage at the  
drain of the MOSFET to rise. If there aren’t any clamp  
diodes internal to the fan, this voltage can rise above  
the drain-to-source voltage rating of the MOSFET. For  
this reason, an external clamp diode is suggested. This  
is shown in Figure 4-5.  
EQUATION  
V
VOLTAGE  
MIN  
V
(V) = (DC * 1.4) + 1.20  
100  
MIN  
DC = Desired Duty Cycle  
Example: If a minimum duty cycle of 40% is desired,  
the V  
voltage should be set to:  
MIN  
EXAMPLE 4-1:  
V
(V) = (40 * 1.4) + 1.20  
100  
MIN  
V
= 1.76V  
MIN  
2003 Microchip Technology Inc.  
DS21756B-page 13  
TC642B/TC647B  
During a fan fault condition, the FAULT output will  
remain low until the fault condition has been removed.  
During this time, the V  
output is driven high contin-  
OUT  
uously to attempt to restart the fan, and the SENSE pin  
is monitored for fan pulses. If a minimum of 16 pulses  
are detected at the SENSE input over a 32 cycle time  
Clamp Diode  
FAN  
period (one second for C = 1.0 µF), the fan fault con-  
F
dition no longer exists. The FAULT output is then  
released and the V  
output returns to normal PWM  
OUT  
operation, as dictated by the V and V  
inputs.  
MIN  
IN  
Q
1
V
OUT  
If the V  
voltage is pulled below the V  
level dur-  
MIN  
SHDN  
ing a fan fault condition, the FAULT output will be  
released and the V output will be shutdown  
OUT  
(V  
= 0V). If the V  
REL  
voltage then increases above  
MIN  
R
OUT  
SENSE  
the V  
threshold, the device will go through the  
normal start-up routine.  
If, during a fan fault condition, the voltage at the V pin  
IN  
drops below the V  
voltage level, the TC642B/  
GND  
MIN  
TC647B device will continue to hold the FAULT line low  
and drive the V output to 100% duty cycle. If the fan  
Q : N-Channel MOSFET  
1
OUT  
fault condition is then removed, the FAULT output will  
be released and the V output will be driven to the  
FIGURE 4-5:  
Clamp Diode for Fan.  
OUT  
duty cycle that is being commanded by the V  
input.  
MIN  
4.7  
FAULT Output  
The sink current capability of the FAULT output is listed  
in the “Electrical Characteristics” table of Section 1.0.  
The FAULT output is an open-drain, active-low output.  
For the TC642B and TC647B devices, the FAULT out-  
put indicates when a fan fault condition has occurred.  
For the TC642B device, the FAULT output also indi-  
cates when an over-temperature (OTF) condition has  
occurred.  
4.8  
Sensing Fan Operation (SENSE)  
The SENSE input is an analog input used to monitor  
the fan’s operation. It does this by sensing fan current  
pulses, which represent fan rotation. When a fan  
rotates, commutation of the fan current occurs as the  
fan poles pass the armatures of the motor. The commu-  
tation of the fan current makes the current waveshape  
appear as pulses. There are two typical current wave-  
forms of brushless DC fan motors. These are shown in  
Figures 4-6 and 4-7.  
For the TC642B device, an over-temperature condition  
is indicated (FAULT output is pulled low) when the V  
IN  
OTF  
input reaches the V  
threshold voltage (the V  
OTF  
threshold voltage is typically 20 mV higher than the  
V
threshold and has 80 mV of hysteresis). This  
CMAX  
indicates that maximum cooling capacity has been  
reached (the fan is at full speed) and that an overheat-  
ing situation can occur. When the voltage at the V  
IN  
input falls below the V  
teresis value (V  
threshold voltage by the hys-  
OTF  
), the FAULT output returns to  
OTF-HYS  
the high-state (a pull-up resistor is needed on the  
FAULT output).  
A fan fault condition is indicated when fan current  
pulses are no longer detected at the SENSE pin.  
Pulses at the SENSE pin indicate that the fan is  
spinning and conducting current.  
If pulses are not detected at the SENSE pin for 32 PWM  
cycles, the 3-cycle diagnostic timer is fired. This means  
that the V  
output is high for 3 PWM cycles. If pulses  
OUT  
are detected in this 3-cycle period, then normal PWM  
operation is resumed and no fan fault is indicated. If no  
pulses are detected in the 3-cycle period, the start-up  
timer is activated and the V  
output is driven high for  
OUT  
32 PWM cycles. If pulses are detected during this time-  
frame, normal PWM operation is resumed. If no pulses  
are detected during this time frame, a fan fault condition  
exists and the FAULT output is pulled low.  
FIGURE 4-6:  
Fan Current With DC Offset  
And Positive Commutation Current.  
DS21756B-page 14  
2003 Microchip Technology Inc.  
TC642B/TC647B  
.
across R  
and presents only the voltage pulse  
SENSE  
portion to the SENSE pin of the TC642B/TC647B  
devices.  
The R  
and C  
values need to be selected so  
SENSE  
SENSE  
that the voltage pulse provided to the SENSE pin is  
70 mV (typical) in amplitude. Be sure to check the  
sense pulse amplitude over all operating conditions  
(duty cycles), as the current pulse amplitude will vary  
with duty cycle. See Section 5.0, “Applications Informa-  
tion”, for more details on selecting values for R  
SENSE  
and C  
.
SENSE  
Key features of the SENSE pin circuitry are an initial  
blanking period after every V  
pulse blanker.  
pulse and an initial  
OUT  
The TC642B/TC647B sense circuitry has a blanking  
period that occurs at the turn-on of each V pulse.  
OUT  
During this blanking period, the sense circuitry ignores  
any pulse information that is seen at the SENSE pin  
input. This stops the TC642B/TC647B device from  
falsely sensing a current pulse which is due to the fan  
drive device turn-on.  
FIGURE 4-7:  
Fan Current With  
Commutation Pulses To Zero.  
The SENSE pin senses positive voltage pulses that  
have an amplitude of 70 mV (typical value). When a  
pulse is detected, the missing pulse detector timer is  
reset. As previously stated, if the missing pulse detec-  
tor timer reaches the time for 32 cycles, the loop for  
diagnosing a fan fault is engaged (diagnostic timer,  
then the start-up timer).  
Both of the fan current waveshapes that are shown in  
Figures 4-6 and 4-7 can be sensed with the sensing  
scheme shown in Figure 4-8.  
The initial pulse blanker is also implemented to stop  
false sensing of fan current pulses. When a fan is in a  
locked rotor condition, the fan current no longer com-  
mutates, it simply flows through one fan winding and is  
a DC current. When a fan is in a locked rotor condition  
and the TC642B/TC647B device is in PWM mode, it  
will see one current pulse each time the V  
output is  
OUT  
turned on. The initial pulse blanker allows the TC642B/  
TC647B device to ignore this pulse and recognize that  
the fan is in a fault condition.  
4.9  
Behavioral Algorithms  
The behavioral algorithm for the TC642B/TC647B  
devices is shown in Figure 4-9.  
FAN  
The behavioral algorithm shows the step-by-step deci-  
sion-making process for the fan speed controller oper-  
ation. The TC642B and TC647B devices are very  
similar with one exception: the TC647B device does  
not implement the over-temperature portion of the  
algorithm.  
TC64XB  
R
ISO  
V
OUT  
SENSE  
GND  
C
SENSE  
R
SENSE  
(0.1 µF typical)  
FIGURE 4-8:  
Sensing Scheme For Fan  
generates a  
Current.  
The fan current flowing through R  
SENSE  
voltage that is proportional to the current. The C  
SENSE  
capacitor removes any DC portion of the voltage  
2003 Microchip Technology Inc.  
DS21756B-page 15  
TC642B/TC647B  
Normal  
Power-Up  
Operation  
Power-on  
Reset  
Clear Missing  
Pulse Detector  
FAULT = 1  
Yes  
?
Shutdown  
VMIN < VSHDN  
V
OUT = 0  
Yes  
Shutdown  
OUT = 0  
VMIN < VSHDN  
No  
?
V
No  
VMIN > VREL  
Yes  
?
No  
No  
VMIN > VREL  
?
Yes  
Fire Start-up  
Timer  
(1 sec)  
Yes  
FAULT = 0  
Power-Up  
VIN > VOTF  
?
Fire Start-up  
Timer  
No  
Fan Pulse  
Detected?  
(1 sec)  
Yes  
No  
Yes  
Fan Pulse  
Detected?  
TC642B Only  
VOUT  
Proportional to Greater  
Normal  
of VIN or VMIN  
No  
Operation  
Fan Fault  
Yes  
Fan Pulse  
Detected?  
No  
M.P.D.  
Expired?  
Yes  
No  
Fire  
Diagnostic  
Timer  
(100 msec)  
Fire Start-up  
Yes  
No  
Fan Pulse  
Detected?  
Fan Fault  
Timer  
(1 sec)  
FAULT = Low,  
OUT = High  
Yes  
V
Fan Pulse  
Detected?  
No  
Yes  
Shutdown  
Fan Fault  
VMIN<VSHDN  
?
V
OUT = 0  
No  
Yes  
No  
V
MIN > VREL?  
Power-Up  
No  
16 Pulses  
Detected?  
Yes  
Normal  
Operation  
FIGURE 4-9:  
TC642B/TC647B Behavioral Algorithm.  
DS21756B-page 16  
2003 Microchip Technology Inc.  
TC642B/TC647B  
5.0  
5.1  
APPLICATIONS INFORMATION  
Setting the PWM Frequency  
V
DD  
I
DIV  
The PWM frequency of the V  
output is set by the  
OUT  
capacitor value attached to the C pin. The PWM fre-  
F
quency will be 30 Hz (typical) for a 1 µF capacitor. The  
relationship between frequency and capacitor value is  
linear, making alternate frequency selections easy.  
R
R
R
T
1
V
IN  
As stated in previous sections, the PWM frequency  
should be kept in the range of 15 Hz to 35 Hz. This will  
eliminate the possibility of having audible frequencies  
when varying the duty cycle of the fan drive.  
2
A very important factor to consider when selecting the  
PWM frequency for the TC642B/TC647B devices is the  
RPM rating of the selected fan and the minimum duty  
cycle that the fan will be operating at. For fans that have  
a full speed rating of 3000 RPM or less, it is desirable  
to use a lower PWM frequency. A lower PWM fre-  
quency allows for a longer time period to monitor the  
fan current pulses. The goal is to be able to monitor at  
least two fan current pulses during the on time of the  
FIGURE 5-1:  
Temperature Sensing  
Circuit.  
Figure 5-1 represents a temperature-dependent volt-  
age divider circuit. R is a conventional NTC thermistor,  
T
while R and R are standard resistors. R and R form  
1
2
1
T
a parallel resistor combination that will be referred to as  
(R = R * R / R + R ). As the temperature  
R
TEMP  
TEMP  
1
T
1
T
V
output.  
increases, the value of R decreases and the value of  
OUT  
t
R
IN  
will decrease with it. Accordingly, the voltage at  
TEMP  
Example: The system design requirement is to operate  
the fan at 50% duty cycle when ambient temperatures  
are below 20°C. The fan full speed RPM rating is  
3000 RPM and has four current pulses per rotation. At  
50% duty cycle, the fan will be operating at  
approximately 1500 RPM.  
V
increases as temperature increases, giving the  
desired relationship for the V input. R helps to linear-  
IN  
1
ize the response of the sense network and aids in  
obtaining the proper V voltages over the desired tem-  
IN  
perature range. An example of this is shown in  
Figure 5-2.  
If less current draw from V is desired, a larger value  
EQUATION  
DD  
thermistor should be chosen. The voltage at the V pin  
IN  
60 × 1000  
can also be generated by a voltage output temperature  
Time for one revolution (msec.) = ----------------------- = 40  
1500  
sensor device. The key is to get the desired V voltage  
IN  
to system (or component) temperature relationship.  
If one fan revolution occurs in 40 msec, each fan pulse  
occurs 10 msec apart. In order to detect two fan current  
The following equations apply to the circuit in  
Figure 5-1.  
pulses, the on time of the V  
pulse must be at least  
OUT  
20 msec. With the duty cycle at 50%, the total period of  
one cycle must be at least 40 msec, which makes the  
PWM frequency 25 Hz. For this example, a PWM fre-  
quency of 20 Hz is recommended. This would define a  
EQUATION  
V
DD × R2  
V(T1) = -----------------------------------------  
TEMP(T1) + R2  
R
C capacitor value of 1.5 µF.  
F
V
DD × R2  
V(T2) = -----------------------------------------  
TEMP(T2) + R2  
5.2  
Temperature Sensor Design  
R
As discussed in previous sections, the V analog input  
IN  
has a range of 1.20V to 2.60V (typical), which repre-  
In order to solve for the values of R and R , the values  
1
2
sents a duty cycle range on the V  
output of 0% to  
OUT  
for V , and the temperatures at which they are to  
IN  
100%, respectively. The V voltages can be thought of  
IN  
occur, need to be selected. The variables T1 and T2  
represent the selected temperatures. The value of the  
thermistor at these two temperatures can be found in  
the thermistor data sheet. With the values for the ther-  
as representing temperatures. The 1.20V level is the  
low temperature at which the system requires very little  
cooling. The 2.60V level is the high temperature, for  
which the system needs maximum cooling capability  
(100% fan speed).  
mistor and the values for V , there are now two  
IN  
equations from which the values for R and R can be  
1
2
One of the simplest ways of sensing temperature over  
a given range is to use a thermistor. By using an NTC  
thermistor, as shown in Figure 5-1, a temperature  
variant voltage can be created.  
found.  
2003 Microchip Technology Inc.  
DS21756B-page 17  
TC642B/TC647B  
Example: The following design goals are desired:  
5.4  
FanSense Network  
(R and C  
)
SENSE  
• Duty Cycle = 50% (V = 1.90 V) with  
SENSE  
IN  
Temperature (T1) = 30°C  
The FanSense Network (comprised of R  
and  
SENSE  
• Duty Cycle = 100% (V = 2.60 V) with  
IN  
C
) allows the TC642B and TC647B devices to  
SENSE  
Temperature (T2) = 60°C  
detect commutation of the fan motor. R  
converts  
SENSE  
Using a 100 kthermistor (25°C value), look up the  
thermistor values at the desired temperatures:  
the fan current into a voltage. C  
AC couples this  
SENSE  
voltage signal to the SENSE pin. The goal of the sense  
network is to provide a voltage pulse to the SENSE pin  
that has a minimum amplitude of 90 mV. This will  
ensure that the current pulse caused by the fan  
commutation is recognized by the TC642B/TC647B  
device.  
• R (T1) = 79428@ 30°C  
T
• R (T2) = 22593@ 60°C  
T
Substituting these numbers into the given equations  
produces the following numbers for R and R .  
1
2
• R = 34.8 kΩ  
A 0.1 µF ceramic capacitor is recommended for  
1
C
. Smaller values will require that larger sense  
• R = 14.7 kΩ  
SENSE  
2
resistors be used. Using a 0.1 µF capacitor results in  
reasonable values for R  
typical SENSE network.  
. Figure 5-3 illustrates a  
SENSE  
140  
120  
100  
80  
4.000  
3.500  
3.000  
2.500  
2.000  
1.500  
1.000  
0.500  
0.000  
VIN Voltage  
FAN  
60  
NTC Thermistor  
100 k: @ 25ºC  
RISO  
715 Ω  
40  
VOUT  
20  
RTEMP  
0
20  
30  
40  
50  
60  
70  
80  
90 100  
Temperature (ºC)  
SENSE  
CSENSE  
(0.1 µF typical)  
RSENSE  
FIGURE 5-2:  
IN  
How Thermistor Resistance,  
Vary With Temperature.  
TEMP  
V , and R  
Note: See Table 5-1 for RSENSE values.  
Figure 5-2 graphs R , R  
(R in parallel with R )  
1 T  
T
TEMP  
and V versus temperature for the example shown  
IN  
FIGURE 5-3:  
Typical Sense Network.  
will change with the cur-  
above.  
The required value of R  
SENSE  
5.3  
Thermistor Selection  
rent rating of the fan and the fan current waveshape. A  
key point is that the current rating of the fan specified  
by the manufacturer may be a worst-case rating, with  
the actual current drawn by the fan being lower. For the  
As with any component, there are a number of sources  
for thermistors. A listing of companies that manufacture  
thermistors can be found at www.temperatures.com/  
thermivendors.html. This website lists over forty  
suppliers of thermistor products. A brief list is shown  
here.  
purposes of setting the value for R  
, the operating  
SENSE  
fan current should be measured to get the nominal  
value. This can be done by using an oscilloscope cur-  
rent probe or by using a voltage probe with a low value  
resistor (0.5). Another good tool for this exercise is  
the TC642 Evaluation Board. This board allows the  
®
- Thermometrics  
- Quality Thermistor™  
- Sensor Scientific™  
®
- Ametherm  
R
and C  
values to be easily changed while  
SENSE  
SENSE  
®
- U.S. Sensors™  
- Advanced Thermal  
Products™  
- Vishay  
allowing the voltage waveforms to be monitored to  
ensure the proper levels are being reached.  
®
- muRata  
Table 5-1 shows values of R  
according to the  
SENSE  
nominal operating current of the fan. The fan currents  
are average values. If the fan current falls between two  
of the values listed, use the higher resistor value.  
DS21756B-page 18  
2003 Microchip Technology Inc.  
TC642B/TC647B  
Another important factor to consider when selecting the  
SENSE  
TABLE 5-1:  
FAN CURRENT VS. R  
SENSE  
R
value is the fan current value during a locked  
Nominal Fan Current  
rotor condition. When a fan is in a locked rotor condition  
(fan blades are stopped even though power is being  
applied to the fan), the fan current can increase dra-  
matically, often 2.5 to 3.0 times the normal operating  
fan current. This will effect the power rating of the  
R
()  
SENSE  
(mA)  
50  
9.1  
4.7  
3.0  
2.4  
2.0  
1.8  
1.5  
1.3  
1.2  
1.0  
100  
150  
200  
250  
300  
350  
400  
450  
500  
R
resistor selected.  
SENSE  
When selecting the fan for the application, the current  
draw of the fan during a locked rotor condition should  
be considered, especially if multiple fans are being  
used in the application.  
There are two main types of fan designs when looking  
at fan current draw during a locked rotor condition.  
The first is a fan that will simply draw high DC currents  
when put into a locked rotor condition. Many older fans  
were designed this way. An example of this is a fan that  
draws an average current of 100 mA during normal  
operation. In a locked rotor condition, this fan will draw  
250 mA of average current. For this design, the  
The values listed in Table 5-1 are for fans that have the  
fan current waveshape shown in Figure 4-7. With this  
waveshape, the average fan current is closer to the  
peak value, which requires the resistor value to be  
higher. When using a fan that has the fan current wave-  
shape shown in Figure 4-6, the resistor value can often  
be decreased since the current peaks are higher than  
the average and it is the AC portion of the voltage that  
gets coupled to the SENSE pin.  
R
power rating must be sized to handle the  
SENSE  
250 mA condition. The fan bias supply must also take  
this into account.  
The second style design, which represents many of the  
newer fan designs today, acts to limit the current in a  
locked rotor condition by going into a pulse mode of  
operation. An example of the fan current waveshape  
for this style fan is shown in Figure 5-5. The fan repre-  
The key point when selecting an R  
value is to try  
SENSE  
to minimize the value in order to minimize the power  
dissipation in the resistor. In order to do this, it is critical  
to know the waveshape of the fan current and not just  
the average value.  
®
sented in Figure 5-5 is a Panasonic , 12V, 220 mA fan.  
During the on time of the waveform, the fan current is  
peaking up to 550 mA. Due to the pulse mode opera-  
tion, however, the actual RMS current of the fan is very  
near the 220 mA rating. Because of this, the power rat-  
Figure 5-4 shows some typical waveforms for the fan  
current and the voltage at the SENSE pin.  
ing for the R  
resistor does not have to be over-  
SENSE  
sized for this application.  
FIGURE 5-4:  
Typical Fan Current and  
SENSE Pin Waveforms.  
2003 Microchip Technology Inc.  
DS21756B-page 19  
TC642B/TC647B  
FIGURE 5-5:  
Fan Current During a Locked Rotor Condition.  
The following is recommended:  
5.5  
Output Drive Device Selection  
• Ask how the fan is designed. If the fan has clamp  
diodes internally, this problem will not be seen. If  
the fan does not have internal clamp diodes, it is a  
good idea to put one externally (Figure 5-6). Put-  
The TC642B/TC647B is designed to drive an external  
NPN transistor or N-channel MOSFET as the fan  
speed modulating element. These two arrangements  
are shown in Figure 5-7. For lower current fans, NPN  
transistors are a very economical choice for the fan  
drive device. It is recommended that, for higher current  
fans (300 mA and above), MOSFETs be used as the  
fan drive device. Table 5-2 provides some possible part  
numbers for use as the fan drive element.  
ting a resistor between V  
and the gate of the  
OUT  
MOSFET will also help slow down the turn-off and  
limit this condition.  
When using a NPN transistor as the fan drive element,  
a base current-limiting resistor must be used, as is  
shown in Figure 5-7.  
FAN  
When using MOSFETs as the fan drive element, it is  
very easy to turn the MOSFETs on and off at very high  
rates. Because the gate capacitances of these small  
MOSFETs are very low, the TC642B/TC647B can  
charge and discharge them very quickly, leading to  
very fast edges. Of key concern is the turn-off edge of  
the MOSFET. Since the fan motor winding is essentially  
an inductor, once the MOSFET is turned off, the current  
that was flowing through the motor wants to continue to  
flow. If the fan does not have internal clamp diodes  
around the windings of the motor, there is no path for  
this current to flow through, and the voltage at the drain  
of the MOSFET may rise until the drain-to-source rating  
of the MOSFET is exceeded. This will most likely cause  
the MOSFET to go into avalanche mode. Since there is  
very little energy in this occurrence, it will probably not  
fail the device, but it would be a long-term reliability  
issue.  
Q
1
V
OUT  
R
SENSE  
GND  
Q : N-Channel MOSFET  
1
FIGURE 5-6:  
Clamp Diode For Fan Turn-  
Off.  
DS21756B-page 20  
2003 Microchip Technology Inc.  
TC642B/TC647B  
Fan Bias  
FAN  
Fan Bias  
FAN  
RBASE  
VOUT  
Q1  
Q1  
VOUT  
RSENSE  
RSENSE  
GND  
GND  
a) Single Bipolar Transistor  
b) N-Channel MOSFET  
FIGURE 5-7:  
Output Drive Device Configurations.  
TABLE 5-2:  
Device  
FAN DRIVE DEVICE SELECTION TABLE (NOTE 2)  
Max Vbe sat /  
V
/V  
Fan Current  
(mA)  
Suggested  
CE DS  
Package  
Min hfe  
Vgs(V)  
(V)  
Rbase ()  
MMBT2222A  
MPS2222A  
MPS6602  
SI2302  
MGSF1N02E  
SI4410  
SOT-23  
TO-92  
TO-92  
SOT-23  
SOT-23  
SO-8  
1.2  
1.2  
1.2  
2.5  
2.5  
4.5  
4.5  
50  
50  
50  
NA  
NA  
NA  
NA  
40  
40  
40  
20  
20  
30  
60  
150  
150  
500  
500  
500  
1000  
500  
800  
800  
301  
Note 1  
Note 1  
Note 1  
Note 1  
SI2308  
SOT-23  
Note 1: A series gate resistor may be used in order to control the MOSFET turn-on and turn-off times.  
2: These drive devices are suggestions only. Fan currents listed are for individual fans.  
5.6  
Bias Supply Bypassing and Noise  
Filtering  
5.7  
Design Example/Typical  
Application  
The bias supply (V ) for the TC642B/TC647B devices  
The system has been designed with the following  
DD  
should be bypassed with a 1.0 µF ceramic capacitor.  
This capacitor will help supply the peak currents that  
are required to drive the base/gate of the external fan  
drive devices.  
components and criteria.  
System inlet air ambient temperature ranges from 0ºC  
to 50ºC. At 20ºC and below, it is desired to have the  
system cooling stay at a constant level. At 20ºC, the fan  
should be run at 40% of its full fan speed. Full fan  
speed should be reached when the ambient air is 40ºC.  
As the V pin controls the duty cycle in a linear fashion,  
IN  
any noise on this pin can cause duty-cycle jittering. For  
this reason, the V pin should be bypassed with a  
IN  
The system has a surface mount, NTC-style thermistor  
in a 1206 package. The thermistor is mounted on a  
daughtercard, which is directly in the inlet air stream.  
The thermistor is a NTC, 100 k@ 25ºC, Thermomet-  
0.01 µF capacitor.  
In order to keep fan noise off of the TC642B/TC647B  
device ground, individual ground returns for the  
TC642B/TC647B and the low side of the fan current  
sense resistor should be used.  
®
rics part number NHQ104B425R5. The given Beta for  
the thermistor is 4250. The system bias voltage to run  
the fan controller is 5V and the fan voltage is 12V.  
2003 Microchip Technology Inc.  
DS21756B-page 21  
TC642B/TC647B  
The fan used in the system is a Panasonic , Panaflo -  
series fan, model number FBA06T12H.  
®
®
A fault indication is desired when the fan is in a locked  
rotor condition. This signal is used to indicate to the  
system that cooling is not available and a warning  
should be issued to the user. No fault indication from  
the fan controller is necessary for an over-temperature  
condition, as this is being reported elsewhere.  
Step 1: Gathering Information.  
The first step in the design process is to gather the  
needed data on the fan and thermistor. For the fan, it is  
also a good idea to look at the fan current waveform, as  
indicated earlier in the data sheet.  
Fan Information: Panasonic number: FBA06T12H  
- Voltage = 12V  
- Current = 145 mA (number from data sheet )  
FIGURE 5-9:  
FBA06T12H Locked rotor  
fan current.  
From Figure 5-9 it is seen that in a locked-rotor fault  
condition, the fan goes into a pulsed current mode of  
operation. During this mode, when the fan is conduct-  
ing current, the peak current value is 360 mA for peri-  
ods of 200 msec. This is significantly higher than the  
average full fan speed current shown in Figure 5-8.  
However, because of the pulse mode, the average fan  
current in a locked-rotor condition is lower and was  
measured at 68 mA. The RMS current during this  
mode, which is necessary for current sense resistor  
(R  
) value selection, was measured at 154 mA.  
SENSE  
This is slightly higher than the RMS value during full fan  
speed operation.  
Thermistor Information: Thermometrics part number:  
FIGURE 5-8:  
FBA06T12H fan current  
NHQ104B425R5  
waveform.  
Resistance Value: 100 k@ 25ºC  
From the waveform in Figure 5-8, the fan current has  
Beta Value (β): 4250  
an average value of 120 mA, with peaks up to 150 mA.  
From this information, the thermistor values at 20ºC  
and 40ºC must be found. This information is needed in  
This information will help in the selection of the R  
SENSE  
and C  
values later on. Also of interest for the  
SENSE  
order to select the proper resistor values for R and R  
1
2
R
selection value is what the fan current does in  
SENSE  
(see Figure 5-13), which sets the V voltage.  
IN  
a locked-rotor condition.  
The equation for determining the thermistor values is  
shown below:  
EQUATION  
β(TO T)  
RT = RTO exp ------------------------  
T ² TO  
R
is the thermistor value at 25ºC. T is 298.15 and T  
0
T0  
is the temperature of interest. All temperatures are  
given in degrees kelvin.  
Using this equation, the values for the thermistor are  
found to be:  
- R (20ºC) = 127,462Ω  
T
- R (40ºC) = 50,520Ω  
T
DS21756B-page 22  
2003 Microchip Technology Inc.  
TC642B/TC647B  
Step 2: Selecting the Fan Controller.  
Using standard 1% resistor values, the selected R and  
2
1
R values are:  
The requirements for the fan controller are that it have  
minimum speed capability at 20ºC and also indicate a  
fan fault condition. No over-temperature indication is  
necessary. Based on these specifications, the proper  
selection is the TC647B device.  
- R = 237 kΩ  
1
- R = 45.3 kΩ  
2
A graph of the V voltage, thermistor resistance and  
IN  
R
resistance versus temperature for this  
TEMP  
Step 3: Setting the PWM Frequency.  
configuration is shown in Figure 5-10.  
The fan is rated at 4200 RPM with a 12V input. Since  
the goal is to run to a 40% duty cycle (roughly 40% fan  
speed), which equates to approximately 1700 RPM,  
we can assume one full fan revolution occurs every  
35 msec. The fan being used is a four-pole fan that  
gives four current pulses per revolution. Knowing this  
and viewing test results at 40% duty cycle, two fan cur-  
rent pulses were always seen during the PWM on time  
400  
350  
5.00  
4.50  
4.00  
3.50  
3.00  
2.50  
2.00  
1.50  
1.00  
0.50  
0.00  
VIN  
300  
250  
200  
150  
NTC Thermistor  
with a PWM frequency of 30 Hz. For this reason, the C  
F
100 k: @ 25ºC  
100  
value is selected to be 1.0 µF.  
50  
RTEMP  
Step 4: Setting the V Voltage.  
IN  
0
From the design criteria, the desired duty cycle at 20ºC  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
is 40%, while full fan speed should be reached at 40ºC.  
Temperature (ºC)  
Based on a V voltage range of 1.20V to 2.60V, which  
IN  
represents 0% to 100% duty cycle, the 40% duty cycle  
voltage can be found using the following equation:  
FIGURE 5-10:  
Thermistor Resistance, V ,  
IN  
and R vs. Temperature.  
TEMP  
Step 5: Setting the Minimum Speed Voltage (V ).  
MIN  
EQUATION  
Setting the voltage for the minimum speed is accom-  
plished using a simple resistor voltage divider. The cri-  
teria for the voltage divider in this design is that it draw  
no more than 100 µA of current. The required minimum  
speed voltage was determined earlier in the selection  
V
= (DC * 1.4V) + 1.20V  
IN  
DC = Desired Duty Cycle  
Using the above equation, the  
calculated to be:  
- V (40%) = 1.76V  
V
values are  
IN  
of the V voltage at 40% duty cycle, since this was also  
IN  
set at the temperature which minimum speed is to  
occur (20ºC).  
IN  
- V (100%) = 2.60V  
IN  
- V  
= 1.76V  
MIN  
Using these values in combination with the thermistor  
Given this desired setpoint, and knowing the desired  
resistance values calculated earlier, the R and R  
1
2
divider current, the following equations can be used to  
resistor values can now be calculated using the  
following equation:  
solve for the resistor values for R and R :  
3
4
EQUATION  
EQUATION  
5V  
R3 + R4  
V
DD × R2  
V(T1) = -----------------------------------------  
TEMP(T1) + R2  
I
=
DIV  
R
5V*R  
R3 + R4  
V
DD × R2  
V(T2) = -----------------------------------------  
TEMP(T2) + R2  
4
V
=
MIN  
R
Using the equations above, the resistor values for R  
3
R
is the parallel combination of R and the ther-  
1
TEMP  
and R are found to be:  
4
mistor. V(T1) represents the V voltage at 20ºC and  
IN  
- R = 32.4 kΩ  
V(T2) represents the V voltage at 40ºC. Solving the  
3
IN  
equations simultaneously yields the following values  
- R = 17.6 kΩ  
4
(V = 5V):  
DD  
- R = 238,455Ω  
1
- R = 45,161Ω  
2
2003 Microchip Technology Inc.  
DS21756B-page 23  
TC642B/TC647B  
.
Using standard 1% resistor values yields the following  
values:  
- R = 32.4 kΩ  
3
- R = 17.8 kΩ  
4
Step 6: Selecting the Fan Drive Device (Q ).  
1
Since the fan operating current is below 200 mA, a  
transistor or MOSFET can be used as the fan drive  
device. In order to reduce component count and cur-  
rent draw, the drive device for this design is chosen to  
be a N-channel MOSFET. Selecting from Table 5-2,  
there are two MOSFETs that are good choices: the  
MGSF1N02E and the SI2302. These devices have the  
same pinout and are interchangeable for this design.  
FIGURE 5-12:  
SENSE pin voltage with  
Step 7: Selecting the R  
and C  
Values.  
SENSE  
SENSE  
3.0sense resistor.  
The goal again for selecting these values is to ensure  
that the signal at the SENSE pin is 90 mV in amplitude  
under all operating conditions. This will ensure that the  
pulses are detected by the TC642B/TC647B device  
and that the fan operation is detected.  
Since the 3.0value of sense resistor provides the  
proper voltage to the SENSE pin, it is the correct choice  
for this solution as it will also provide the lowest power  
dissipation and the most voltage to the fan. Using the  
RMS fan current that was measured previously, the  
The fan current waveform is shown in Figure 5-8 and,  
as discussed previously, with a waveform of this shape,  
the current sense resistor values shown in Table 5-1 are  
good reference values. Given that the average fan oper-  
ating current was measured to be 120 mA, this falls  
between two of the values listed in the table. For refer-  
ence purposes, both values have been tested and  
these results are shown in Figures 5-11 (4.7) and 5-12  
power dissipation in the resistor during a fan fault con-  
2
dition is 71 mW (Irms * R  
). This number will set  
SENSE  
the wattage rating of the resistor that is selected. The  
selected value will vary depending upon the derating  
guidelines that are used.  
Now that all the values have been selected, the sche-  
matic representation of this design can be seen in  
Figure 5-13.  
(3.0). The selected C  
value is 0.1 µF as this pro-  
SENSE  
vides the appropriate coupling of the voltage to the  
SENSE pin.  
.
FIGURE 5-11:  
SENSE pin voltage with  
4.7sense resistor.  
DS21756B-page 24  
2003 Microchip Technology Inc.  
TC642B/TC647B  
+5V  
+12V  
+
C
VDD  
®
Thermometrics  
R
1.0 µF  
1
100 k@25°C  
237 kΩ  
®
NHQ104B425R5  
Panasonic  
Fan  
8
V
12V, 140 mA  
FBA06T12H  
R
5
1
V
10 kΩ  
IN  
DD  
C
B
0.01 µF  
6
FAULT  
R
2
45.3 kΩ  
+5V  
R
Q
7
5
3
1
V
TC647B  
OUT  
SI2302  
or  
32.4 kΩ  
3
MGSF1N02E  
V
MIN  
C
B
SENSE  
0.01 µF  
2
C
R
SENSE  
4
C
F
R
0.1 µF  
SENSE  
17.8 kΩ  
GND  
4
3.0Ω  
C
F
1.0 µF  
FIGURE 5-13:  
Bypass capacitor C  
Design Example Schematic.  
is added to the design to  
VDD  
decouple the bias voltage. This is good to have, espe-  
cially when using a MOSFET as the drive device. This  
helps to give a localized low-impedance source for the  
current required to charge the gate capacitance of Q .  
1
Two other bypass capacitors, labeled as C , were also  
B
added to decouple the V and V  
nodes. These  
MIN  
IN  
were added simply to remove any noise present that  
might cause false triggerings or PWM jitter. R is the  
5
pull-up resistor for the FAULT output. The value for this  
resistor is system-dependent.  
2003 Microchip Technology Inc.  
DS21756B-page 25  
TC642B/TC647B  
6.0  
6.1  
PACKAGING INFORMATION  
Package Marking Information  
8-Lead PDIP (300 mil)  
Example:  
XXXXXXXXX  
NNN  
TC642BCPA  
025  
YYWW  
0215  
8-Lead SOIC (150 mil)  
Example:  
XXXXXX  
TC642B  
XXXYYWW  
COA0215  
NNN  
025  
Example:  
8-Lead MSOP  
TC642B  
XXXXXX  
YWWNNN  
215025  
Legend: XX...X Customer specific information*  
Y
Year code (last digit of calendar year)  
YY  
Year code (last 2 digits of calendar year)  
Week code (week of January 1 is week ‘01’)  
Alphanumeric traceability code  
WW  
NNN  
Note: In the event the full Microchip part number cannot be marked on one line, it will  
be carried over to the next line thus limiting the number of available characters  
for customer specific information.  
*
Standard device marking consists of Microchip part number, year code, week code, and traceability  
code.  
DS21756B-page 26  
2003 Microchip Technology Inc.  
TC642B/TC647B  
8-Lead Plastic Dual In-line (P) – 300 mil (PDIP)  
E1  
D
2
n
1
α
E
A2  
A
L
c
A1  
β
B1  
B
p
eB  
Units  
Dimension Limits  
INCHES*  
NOM  
MILLIMETERS  
MIN  
MAX  
MIN  
NOM  
MAX  
n
p
A
A2  
A1  
E
E1  
D
L
c
B1  
B
Number of Pins  
Pitch  
Top to Seating Plane  
Molded Package Thickness  
Base to Seating Plane  
Shoulder to Shoulder Width  
Molded Package Width  
Overall Length  
Tip to Seating Plane  
Lead Thickness  
Upper Lead Width  
Lower Lead Width  
Overall Row Spacing  
Mold Draft Angle Top  
Mold Draft Angle Bottom  
8
8
.100  
.155  
.130  
2.54  
3.94  
3.30  
.140  
.170  
.145  
3.56  
4.32  
3.68  
.115  
.015  
.300  
.240  
.360  
.125  
.008  
.045  
.014  
.310  
5
2.92  
0.38  
7.62  
6.10  
9.14  
3.18  
0.20  
1.14  
0.36  
7.87  
5
.313  
.250  
.373  
.130  
.012  
.058  
.018  
.370  
10  
.325  
.260  
.385  
.135  
.015  
.070  
.022  
.430  
15  
7.94  
6.35  
9.46  
3.30  
0.29  
1.46  
0.46  
9.40  
10  
8.26  
6.60  
9.78  
3.43  
0.38  
1.78  
0.56  
10.92  
15  
§
eB  
α
β
5
10  
15  
5
10  
15  
* Controlling Parameter  
§ Significant Characteristic  
Notes:  
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed  
.010” (0.254mm) per side.  
JEDEC Equivalent: MS-001  
Drawing No. C04-018  
2003 Microchip Technology Inc.  
DS21756B-page 27  
TC642B/TC647B  
8-Lead Plastic Small Outline (SN) – Narrow, 150 mil (SOIC)  
E
E1  
p
D
2
B
n
1
h
α
45×  
c
A2  
A
f
β
L
A1  
Units  
INCHES*  
NOM  
MILLIMETERS  
Dimension Limits  
MIN  
MAX  
MIN  
NOM  
8
MAX  
n
p
A
A2  
A1  
E
E1  
D
h
L
f
Number of Pins  
Pitch  
Overall Height  
8
.050  
.061  
.056  
.007  
.237  
.154  
.193  
.015  
.025  
4
1.27  
.053  
.069  
1.35  
1.32  
1.55  
1.42  
0.18  
6.02  
3.91  
4.90  
0.38  
0.62  
4
1.75  
Molded Package Thickness  
Standoff  
.052  
.004  
.228  
.146  
.189  
.010  
.019  
0
.061  
.010  
.244  
.157  
.197  
.020  
.030  
8
1.55  
0.25  
6.20  
3.99  
5.00  
0.51  
0.76  
8
§
0.10  
5.79  
3.71  
4.80  
0.25  
0.48  
0
Overall Width  
Molded Package Width  
Overall Length  
Chamfer Distance  
Foot Length  
Foot Angle  
c
Lead Thickness  
Lead Width  
.008  
.013  
0
.009  
.017  
12  
.010  
.020  
15  
0.20  
0.33  
0
0.23  
0.42  
12  
0.25  
0.51  
15  
B
α
β
Mold Draft Angle Top  
Mold Draft Angle Bottom  
0
12  
15  
0
12  
15  
* Controlling Parameter  
§ Significant Characteristic  
Notes:  
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed  
.010” (0.254mm) per side.  
JEDEC Equivalent: MS-012  
Drawing No. C04-057  
DS21756B-page 28  
2003 Microchip Technology Inc.  
TC642B/TC647B  
8-Lead Plastic Micro Small Outline Package (MS) (MSOP)  
E
E1  
p
D
2
B
n
1
α
A2  
A
c
φ
A1  
(F)  
L
β
Units  
Dimension Limits  
INCHES  
NOM  
MILLIMETERS*  
MIN  
MAX  
MIN  
NOM  
MAX  
n
p
Number of Pins  
Pitch  
8
8
.026 BSC  
0.65 BSC  
Overall Height  
A
A2  
A1  
E
-
-
.043  
-
-
1.10  
Molded Package Thickness  
Standoff  
.030  
.000  
.033  
-
.037  
.006  
0.75  
0.00  
0.85  
-
0.95  
0.15  
Overall Width  
.193 TYP.  
4.90 BSC  
Molded Package Width  
Overall Length  
Foot Length  
E1  
D
.118 BSC  
.118 BSC  
3.00 BSC  
3.00 BSC  
L
.016  
.024  
.037 REF  
.031  
0.40  
0.60  
0.95 REF  
0.80  
Footprint (Reference)  
Foot Angle  
F
φ
c
0°  
.003  
.009  
5°  
-
8°  
.009  
.016  
15°  
0°  
0.08  
0.22  
5°  
-
-
-
-
-
8°  
0.23  
0.40  
15°  
Lead Thickness  
Lead Width  
.006  
B
α
β
.012  
Mold Draft Angle Top  
Mold Draft Angle Bottom  
*Controlling Parameter  
Notes:  
-
-
5°  
15°  
5°  
15°  
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not  
exceed .010" (0.254mm) per side.  
JEDEC Equivalent: MO-187  
Drawing No. C04-111  
2003 Microchip Technology Inc.  
DS21756B-page 29  
TC642B/TC647B  
6.2  
Taping Form  
Component Taping Orientation for 8-Pin MSOP Devices  
User Direction of Feed  
PIN 1  
W
P
Standard Reel Component Orientation  
for 713 or TR Suffix Device  
Carrier Tape, Number of Components Per Reel and Reel Size:  
Package  
8-Pin MSOP  
Carrier Width (W)  
Pitch (P)  
8 mm  
Part Per Full Reel  
Reel Size  
13 in.  
12 mm  
2500  
Component Taping Orientation for 8-Pin SOIC Devices  
User Direction of Feed  
PIN 1  
W
P
Standard Reel Component Orientation  
for 713 or TR Suffix Device  
Carrier Tape, Number of Components Per Reel and Reel Size:  
Package  
8-Pin SOIC  
Carrier Width (W)  
Pitch (P)  
Part Per Full Reel  
Reel Size  
12 mm  
8 mm  
2500  
13 in.  
DS21756B-page 30  
2003 Microchip Technology Inc.  
TC642B/TC647B  
PRODUCT IDENTIFICATION SYSTEM  
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.  
Examples:  
PART NO.  
Device  
X
/XX  
a) TC642BEOA: SOIC package.  
Temperature Package  
Range  
b) TC642BEOA713: Tape and Reel,  
SOIC package.  
c) TC642BEPA: PDIP package.  
d) TC642BEUA: MSOP package.  
Device:  
TC642B: PWM Fan Speed Controller with Mini-  
mum Fan Speed, Fan Restart, Fan Fault  
Detection, and Over-Temp Detection.  
TC647B: PWM Fan Speed Controller with Mini-  
mum Fan Speed, Fan Restart, and Fan  
Fault Detection.  
a) TC647BEOA: SOIC package.  
b) TC647BEPA: PDIP package.  
c) TC647BEUA: MSOP package.  
d) TC647BEUATR: Tape and Reel,  
Temperature  
Range:  
E
= -40°C to +85°C  
MSOP package.  
Package:  
OA = Plastic SOIC, (150 mil Body), 8-lead  
PA = Plastic DIP (300 mil Body), 8-lead  
UA = Plastic Micro Small Outline (MSOP), 8-lead  
713 = Tape and Reel (SOIC and MSOP)  
(TC642B only)  
TR = Tape and Reel (SOIC and MSOP)  
(TC647B only)  
Sales and Support  
Data Sheets  
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and  
recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:  
1. Your local Microchip sales office  
2. The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277  
3. The Microchip Worldwide Site (www.microchip.com)  
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.  
Customer Notification System  
Register on our web site (www.microchip.com/cn) to receive the most current information on our products.  
2003 Microchip Technology Inc.  
DS21756B-page 31  
TC642B/TC647B  
NOTES:  
DS21756B-page 32  
2003 Microchip Technology Inc.  
Note the following details of the code protection feature on Microchip devices:  
Microchip products meet the specification contained in their particular Microchip Data Sheet.  
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the  
intended manner and under normal conditions.  
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our  
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip's Data  
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.  
Microchip is willing to work with the customer who is concerned about the integrity of their code.  
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not  
mean that we are guaranteeing the product as “unbreakable.”  
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our  
products. Attempts to break microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts  
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.  
Information contained in this publication regarding device  
applications and the like is intended through suggestion only  
and may be superseded by updates. It is your responsibility to  
ensure that your application meets with your specifications.  
No representation or warranty is given and no liability is  
assumed by Microchip Technology Incorporated with respect  
to the accuracy or use of such information, or infringement of  
patents or other intellectual property rights arising from such  
use or otherwise. Use of Microchip’s products as critical  
components in life support systems is not authorized except  
with express written approval by Microchip. No licenses are  
conveyed, implicitly or otherwise, under any intellectual  
property rights.  
Trademarks  
The Microchip name and logo, the Microchip logo, KEELOQ,  
MPLAB, PIC, PICmicro, PICSTART, PRO MATE and  
PowerSmart are registered trademarks of Microchip  
Technology Incorporated in the U.S.A. and other countries.  
FilterLab, microID, MXDEV, MXLAB, PICMASTER, SEEVAL  
and The Embedded Control Solutions Company are  
registered trademarks of Microchip Technology Incorporated  
in the U.S.A.  
Accuron, Application Maestro, dsPIC, dsPICDEM,  
dsPICDEM.net, ECONOMONITOR, FanSense, FlexROM,  
fuzzyLAB, In-Circuit Serial Programming, ICSP, ICEPIC,  
microPort, Migratable Memory, MPASM, MPLIB, MPLINK,  
MPSIM, PICC, PICkit, PICDEM, PICDEM.net, PowerCal,  
PowerInfo, PowerMate, PowerTool, rfLAB, rfPIC, Select  
Mode, SmartSensor, SmartShunt, SmartTel and Total  
Endurance are trademarks of Microchip Technology  
Incorporated in the U.S.A. and other countries.  
Serialized Quick Turn Programming (SQTP) is a service mark  
of Microchip Technology Incorporated in the U.S.A.  
All other trademarks mentioned herein are property of their  
respective companies.  
© 2003, Microchip Technology Incorporated, Printed in the  
U.S.A., All Rights Reserved.  
Printed on recycled paper.  
Microchip received QS-9000 quality system  
certification for its worldwide headquarters,  
design and wafer fabrication facilities in  
Chandler and Tempe, Arizona in July 1999  
and Mountain View, California in March 2002.  
The Company’s quality system processes and  
procedures are QS-9000 compliant for its  
®
PICmicro 8-bit MCUs, KEELOQ® code hopping  
devices, Serial EEPROMs, microperipherals,  
non-volatile memory and analog products. In  
addition, Microchip’s quality system for the  
design and manufacture of development  
systems is ISO 9001 certified.  
DS21756B-page 33  
2003 Microchip Technology Inc.  
M
WORLDWIDE SALES AND SERVICE  
Japan  
AMERICAS  
ASIA/PACIFIC  
Microchip Technology Japan K.K.  
Benex S-1 6F  
Corporate Office  
Australia  
2355 West Chandler Blvd.  
Microchip Technology Australia Pty Ltd  
Marketing Support Division  
Suite 22, 41 Rawson Street  
Epping 2121, NSW  
3-18-20, Shinyokohama  
Kohoku-Ku, Yokohama-shi  
Kanagawa, 222-0033, Japan  
Tel: 81-45-471- 6166 Fax: 81-45-471-6122  
Chandler, AZ 85224-6199  
Tel: 480-792-7200 Fax: 480-792-7277  
Technical Support: 480-792-7627  
Web Address: http://www.microchip.com  
Australia  
Korea  
Tel: 61-2-9868-6733 Fax: 61-2-9868-6755  
Atlanta  
Microchip Technology Korea  
168-1, Youngbo Bldg. 3 Floor  
Samsung-Dong, Kangnam-Ku  
Seoul, Korea 135-882  
China - Beijing  
3780 Mansell Road, Suite 130  
Alpharetta, GA 30022  
Microchip Technology Consulting (Shanghai)  
Co., Ltd., Beijing Liaison Office  
Unit 915  
Tel: 770-640-0034 Fax: 770-640-0307  
Tel: 82-2-554-7200 Fax: 82-2-558-5934  
Boston  
Bei Hai Wan Tai Bldg.  
Singapore  
2 Lan Drive, Suite 120  
Westford, MA 01886  
Tel: 978-692-3848 Fax: 978-692-3821  
No. 6 Chaoyangmen Beidajie  
Beijing, 100027, No. China  
Tel: 86-10-85282100 Fax: 86-10-85282104  
Microchip Technology Singapore Pte Ltd.  
200 Middle Road  
#07-02 Prime Centre  
Chicago  
China - Chengdu  
Singapore, 188980  
333 Pierce Road, Suite 180  
Itasca, IL 60143  
Microchip Technology Consulting (Shanghai)  
Co., Ltd., Chengdu Liaison Office  
Rm. 2401-2402, 24th Floor,  
Tel: 65-6s334-8870 Fax: 65-6334-8850  
Taiwan  
Tel: 630-285-0071 Fax: 630-285-0075  
Microchip Technology (Barbados) Inc.,  
Taiwan Branch  
Ming Xing Financial Tower  
Dallas  
No. 88 TIDU Street  
4570 Westgrove Drive, Suite 160  
Addison, TX 75001  
11F-3, No. 207  
Chengdu 610016, China  
Tung Hua North Road  
Taipei, 105, Taiwan  
Tel: 86-28-86766200 Fax: 86-28-86766599  
Tel: 972-818-7423 Fax: 972-818-2924  
China - Fuzhou  
Tel: 886-2-2717-7175 Fax: 886-2-2545-0139  
Detroit  
Microchip Technology Consulting (Shanghai)  
Co., Ltd., Fuzhou Liaison Office  
Unit 28F, World Trade Plaza  
Tri-Atria Office Building  
EUROPE  
Austria  
32255 Northwestern Highway, Suite 190  
Farmington Hills, MI 48334  
Tel: 248-538-2250 Fax: 248-538-2260  
No. 71 Wusi Road  
Microchip Technology Austria GmbH  
Durisolstrasse 2  
Fuzhou 350001, China  
Kokomo  
Tel: 86-591-7503506 Fax: 86-591-7503521  
A-4600 Wels  
2767 S. Albright Road  
Kokomo, IN 46902  
China - Hong Kong SAR  
Austria  
Microchip Technology Hongkong Ltd.  
Unit 901-6, Tower 2, Metroplaza  
223 Hing Fong Road  
Tel: 43-7242-2244-399  
Fax: 43-7242-2244-393  
Denmark  
Tel: 765-864-8360 Fax: 765-864-8387  
Los Angeles  
Kwai Fong, N.T., Hong Kong  
18201 Von Karman, Suite 1090  
Irvine, CA 92612  
Microchip Technology Nordic ApS  
Regus Business Centre  
Lautrup hoj 1-3  
Tel: 852-2401-1200 Fax: 852-2401-3431  
China - Shanghai  
Tel: 949-263-1888 Fax: 949-263-1338  
Microchip Technology Consulting (Shanghai)  
Co., Ltd.  
Ballerup DK-2750 Denmark  
Phoenix  
Tel: 45-4420-9895 Fax: 45-4420-9910  
2355 West Chandler Blvd.  
Chandler, AZ 85224-6199  
Tel: 480-792-7966 Fax: 480-792-4338  
Room 701, Bldg. B  
France  
Far East International Plaza  
No. 317 Xian Xia Road  
Microchip Technology SARL  
Parc d’Activite du Moulin de Massy  
43 Rue du Saule Trapu  
San Jose  
Shanghai, 200051  
Microchip Technology Inc.  
2107 North First Street, Suite 590  
San Jose, CA 95131  
Tel: 86-21-6275-5700 Fax: 86-21-6275-5060  
Batiment A - ler Etage  
China - Shenzhen  
91300 Massy, France  
Microchip Technology Consulting (Shanghai)  
Co., Ltd., Shenzhen Liaison Office  
Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79  
Tel: 408-436-7950 Fax: 408-436-7955  
Germany  
Rm. 1812, 18/F, Building A, United Plaza  
No. 5022 Binhe Road, Futian District  
Shenzhen 518033, China  
Toronto  
Microchip Technology GmbH  
Steinheilstrasse 10  
6285 Northam Drive, Suite 108  
Mississauga, Ontario L4V 1X5, Canada  
Tel: 905-673-0699 Fax: 905-673-6509  
D-85737 Ismaning, Germany  
Tel: 49-89-627-144-0  
Fax: 49-89-627-144-44  
Tel: 86-755-82901380 Fax: 86-755-82966626  
China - Qingdao  
Rm. B505A, Fullhope Plaza,  
Italy  
No. 12 Hong Kong Central Rd.  
Qingdao 266071, China  
Microchip Technology SRL  
Via Quasimodo, 12  
20025 Legnano (MI)  
Milan, Italy  
Tel: 86-532-5027355 Fax: 86-532-5027205  
India  
Tel: 39-0331-742611 Fax: 39-0331-466781  
Microchip Technology Inc.  
India Liaison Office  
United Kingdom  
Marketing Support Division  
Divyasree Chambers  
Microchip Ltd.  
505 Eskdale Road  
1 Floor, Wing A (A3/A4)  
No. 11, O’Shaugnessey Road  
Bangalore, 560 025, India  
Tel: 91-80-2290061 Fax: 91-80-2290062  
Winnersh Triangle  
Wokingham  
Berkshire, England RG41 5TU  
Tel: 44-118-921-5869 Fax: 44-118-921-5820  
03/25/03  
DS21756B-page 34  
2003 Microchip Technology Inc.  

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