TC646VOA713 [MICROCHIP]

BRUSHLESS DC MOTOR CONTROLLER, PDSO8, 0.150 INCH, PLASTIC, SOIC-8;
TC646VOA713
型号: TC646VOA713
厂家: MICROCHIP    MICROCHIP
描述:

BRUSHLESS DC MOTOR CONTROLLER, PDSO8, 0.150 INCH, PLASTIC, SOIC-8

电动机控制 光电二极管
文件: 总30页 (文件大小:300K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DTC646  
PWM Fan Speed Controller with Auto-Shutdown  
and FanSenseTechnology  
Features  
Package Types  
Temperature Proportional Fan Speed for Acoustic  
Control and Longer Fan Life  
SOIC/PDIP/MSOP  
• Efficient PWM Fan Drive  
V
V
V
1
2
3
4
8
7
6
5
IN  
DD  
• 3.0V to 5.5V Supply Range:  
C
OUT  
F
TC646  
- Fan Voltage Independent of TC646  
Supply Voltage  
V
FAULT  
SENSE  
AS  
GND  
- Supports any Fan Voltage  
• FanSense™ Fault Detection Circuits Protect  
Against Fan Failure and Aid System Testing  
General Description  
• Shutdown Mode for "Green" Systems  
• Supports Low Cost NTC/PTC Thermistors  
• Space Saving 8-Pin MSOP Package  
• Over-temperature Indication  
The TC646 is a switch mode, fan speed controller for  
use with brushless DC fans. Temperature proportional  
speed control is accomplished using pulse width mod-  
ulation (PWM). A thermistor (or other voltage output  
temperature sensor) connected to the VIN input fur-  
nishes the required control voltage of 1.25V to 2.65V  
(typical) for 0% to 100% PWM duty cycle. The TC646  
automatically suspends fan operation when measured  
temperature (VIN) is below a user programmed  
minimum setting (VAS). An integrated Start-up Timer  
ensures reliable motor start-up at turn-on, coming out  
of shutdown mode, auto-shutdown mode or following a  
transient fault.  
Applications  
• Power Supplies  
• Computers  
• File Servers  
• Portable Computers  
Telecom Equipment  
• UPS, Power Amps  
• General Purpose Fan Speed Control  
The TC646 features Microchip Technology's proprie-  
tary FanSense™ technology for increasing system reli-  
ability. In normal fan operation, a pulse train is present  
at SENSE (Pin 5). A missing-pulse detector monitors  
this pin during fan operation. A stalled, open, or uncon-  
nected fan causes the TC646 to trigger its Start-up  
Timer once. If the fault persists, the FAULT output goes  
low and the device is latched in its shutdown mode.  
FAULT is also asserted if the PWM reaches 100% duty  
cycle, indicating a possible thermal runaway situation,  
although the fan continues to run. See Section 5.0,  
“Typical Applications”, for more information and system  
design guidelines.  
Available Tools  
• Fan Controller Demonstration Board (TC642DEMO)  
• Fan Controller Evaluation Kit (TC642EV)  
The TC646 is available in the 8-pin plastic DIP, SOIC  
and MSOP packages and is available in the industrial  
and extended commercial temperature ranges.  
2002-2012 Microchip Technology Inc.  
DS21446D-page 1  
TC646  
Functional Block Diagram  
V
IN  
+
V
DD  
V
OTF  
OTF  
+
PWM  
Control  
Logic  
V
OUT  
C
F
3 x T  
Timer  
PWM  
Clock  
Generator  
FAULT  
Start-up  
Timer  
V
AS  
+
SHDN  
Missing  
Pulse  
Detect.  
+
+
TC646  
V
SHDN  
SENSE  
10kΩ  
GND  
70mV (typ.)  
DS21446D-page 2  
2002-2012 Microchip Technology Inc.  
TC646  
*Stresses above those listed under "Absolute Maximum Rat-  
ings" may cause permanent damage to the device. These are  
stress ratings only and functional operation of the device at  
these or any other conditions above those indicated in the  
operation sections of the specifications is not implied. Expo-  
sure to absolute maximum rating conditions for extended peri-  
ods may affect device reliability.  
1.0  
ELECTRICAL  
CHARACTERISTICS  
Absolute Maximum Ratings*  
Supply Voltage .........................................................6V  
Input Voltage, Any Pin..... (GND – 0.3V) to (VDD+0.3V)  
Package Thermal Resistance:  
PDIP (RJA).............................................125°C/W  
SOIC (RJA) ............................................155°C/W  
MSOP (RJA) ..........................................200°C/W  
Specified Temperature Range............-40°C to +125°C  
Storage Temperature Range..............-65°C to +150°C  
DC ELECTRICAL SPECIFICATIONS  
Electrical Characteristics: Unless otherwise specified, T  
T T  
, V = 3.0V to 5.5V  
MIN  
A
MAX  
DD  
Symbol  
Parameter  
Supply Voltage  
Min  
Typ  
Max  
Units  
Test Conditions  
V
3.0  
5.5  
1.0  
V
DD  
I
Supply Current, Operating  
0.5  
mA Pins 6, 7 Open,  
= 1 µF, V = V  
C(MAX)  
DD  
C
F
IN  
I
Supply Current, Shutdown/  
Auto-shutdown Mode  
25  
µA Pins 6, 7 Open;  
DD(SHDN)  
Note 1  
C
=1 µF, V = 0.35V  
IN  
F
I
V
, V Input Leakage  
-1.0  
+1.0  
µA Note 1  
IN  
IN AS  
V
Output  
OUT  
t
t
t
V
V
Rise Time  
Fall Time  
30  
50  
50  
µsec  
µsec  
µsec  
I
I
= 5 mA, Note 1  
= 1 mA, Note 1  
R
OUT  
OH  
F
OUT  
OL  
Pulse Width(On V ) to Clear  
V
, V  
SHDN HYST  
SHDN  
IN  
Fault Mode  
Specifications,  
Note 1  
I
I
Sink Current at V  
Output  
1.0  
5.0  
mA  
mA  
V
V
= 10% of V  
OL DD  
OL  
OUT  
Source Current at V  
Output  
= 80% of V  
DD  
OH  
OUT  
OH  
SENSE Input  
V
SENSE Input Threshold  
50  
70  
90  
mV Note 1  
TH(SENSE)  
Voltage with Respect to GND  
FAULT Output  
V
Output Low Voltage  
Missing Pulse Detector Timer  
Start-up Timer  
0.3  
V
I
= 2.5 mA  
= 1.0 µF  
= 1.0 µF  
= 1.0 µF  
OL  
OL  
t
t
t
32/F  
32/F  
3/F  
Sec  
Sec  
Sec  
C
C
C
MP  
F
F
F
STARTUP  
DIAG  
Diagnostic Timer  
Note 1: Ensured by design, not tested.  
2002-2012 Microchip Technology Inc.  
DS21446D-page 3  
 
 
TC646  
DC ELECTRICAL SPECIFICATIONS (CONTINUED)  
Electrical Characteristics: Unless otherwise specified, T  
T T  
, V = 3.0V to 5.5V  
MAX DD  
MIN  
A
Symbol  
, V Inputs  
Parameter  
Min  
Typ  
Max  
Units  
Test Conditions  
V
IN  
AS  
V
V
Voltage at V for 100% Duty  
Cycle and Overtemp. Fault  
2.5  
1.3  
2.65  
2.8  
V
C(MAX), OTF  
IN  
V
V
- V  
1.4  
1.5  
V
V
C(SPAN)  
C(MAX)  
C(MIN)  
V
Auto-shutdown Threshold  
V
V
V
AS  
C(MAX) ~  
C(SPAN)  
C(MAX)  
V
Voltage Applied to V to  
V
x 0.13  
V
V
SHDN  
REL  
IN  
DD  
ensure Reset/Shutdown  
V
Voltage Applied to V to  
V
x 0.19  
V = 5V,  
DD  
IN  
DD  
Release Reset Mode  
See Figure 5-11  
V
V
Hysteresis on V  
V
0.01 x V  
70  
V
HYST  
SHDN, REL  
DD  
Hysteresis on Auto-shutdown  
Comparator  
mV  
HAS  
Pulse Width Modulator  
PWM Frequency  
F
26  
30  
34  
Hz  
C = 1.0 µF  
F
OSC  
Note 1: Ensured by design, not tested.  
DS21446D-page 4  
2002-2012 Microchip Technology Inc.  
TC646  
2.3  
Analog Input (V  
)
2.0  
PIN DESCRIPTIONS  
AS  
An external resistor divider connected to the VAS input  
sets the auto-shutdown threshold. Auto-shutdown  
occurs when VIN  VAS. The fan is automatically  
restarted when VIN (VAS + VHAS) (see Section 5.0,  
“Typical Applications”, for more details).  
The descriptions of the pins are listed in Table 2-1.  
TABLE 2-1:  
PIN FUNCTION TABLE  
Description  
Analog Input  
Pin No. Symbol  
1
VIN  
CF  
2.4  
Ground (GND)  
2
3
4
5
6
7
8
Analog Output  
Analog Input  
GND denotes the ground terminal.  
VAS  
GND  
Ground Terminal  
2.5  
Analog Input (SENSE)  
SENSE Analog Input  
Pulses are detected at the SENSE pin as fan rotation  
chops the current through a sense resistor (RSENSE).  
FAULT Digital (Open Collector) Output  
VOUT  
VDD  
Digital Output  
The absence of pulses indicates  
a fault (see  
Power Supply Input  
Section 5.0, “Typical Applications”, for more details).  
2.1  
Analog Input (V )  
2.6  
Digital Output (FAULT)  
IN  
The thermistor network (or other temperature sensor)  
connects to the VIN input. A voltage range of 1.25V to  
2.65V (typical) on this pin drives an active duty cycle of  
0% to 100% on the VOUT pin. The TC646 enters shut-  
down mode when VIN VSHDN. During shutdown, the  
FAULT output is inactive, and supply current falls to  
25 µA (typical). The TC646 exits shutdown mode  
when VIN VREL (see Section 5.0, “Typical  
The FAULT line goes low to indicate a fault condition.  
When FAULT goes low due to a fan fault condition, the  
device is latched in shutdown mode until deliberately  
cleared or until power is cycled. FAULT will also be  
asserted when the PWM reaches 100% duty cycle,  
indicating that maximum cooling capability has been  
reached and a possible over-temperature condition  
may occur. This is a non-latching state and the FAULT  
output will go high when the PWM duty cycle goes  
below 100%.  
Applications”, for details).  
2.2  
Analog Output (C )  
F
2.7  
Digital Output (V  
)
OUT  
CF is the positive terminal for the PWM ramp generator  
timing capacitor. The recommended CF is 1 µF for  
30 Hz PWM operation.  
VOUT is an active high complimentary output that drives  
the base of an external NPN transistor (via an appropri-  
ate base resistor) or the gate of an N-channel MOS-  
FET. This output has asymmetrical drive (see  
Section 1.0, “Electrical Characteristics”).  
2.8  
Power Supply Input (V  
)
DD  
VDD may be independent of the fan’s power supply  
(see Section 1.0, “Electrical Characteristics”).  
2002-2012 Microchip Technology Inc.  
DS21446D-page 5  
 
TC646  
3.5  
FAULT Output  
3.0  
3.1  
DETAILED DESCRIPTION  
The TC646 detects faults in two ways:  
PWM  
First, pulses appearing at SENSE due to the PWM  
turning on are blanked, with the remaining pulses being  
filtered by a missing pulse detector. If consecutive  
pulses are not detected for thirty-two PWM cycles  
(1 Sec if CF = 1 µF), the Diagnostic Timer is activated  
and VOUT is driven high continuously for three PWM  
cycles (100 msec if CF = 1 µF). If a pulse is not  
detected within this window, the Start-up Timer is trig-  
gered (see Section 3.3, “Start-up Timer”). This should  
clear a transient fault condition. If the missing pulse  
detector times out again, the PWM is stopped and  
FAULT goes low. When FAULT is activated due to this  
condition, the device is latched in shutdown mode and  
will remain off indefinitely. Therefore, the TC646 is pre-  
vented from attempting to drive a fan under cata-  
strophic fault conditions.  
The PWM circuit consists of a ramp generator and  
threshold detector. The frequency of the PWM is  
determined by the value of the capacitor connected to  
the CF input. A frequency of 30 Hz is recommended  
(CF = 1 µF). The PWM is also the time base for the  
Start-up Timer (see Section 3.3, “Start-Up Timer”). The  
PWM voltage control range is 1.25V to 2.65V (typical)  
for 0% to 100% output duty cycle.  
3.2  
VOUT Output  
The VOUT pin is designed to drive a low cost transistor  
or MOSFET as the low side, power switching element  
in the system. Various examples of driver circuits will be  
shown throughout this data sheet. This output has  
asymmetric complementary drive and is optimized for  
driving NPN transistors or N-channel MOSFETs. Since  
the system relies on PWM rather than linear control,  
the power dissipation in the power switch is kept to a  
minimum. Generally, very small devices (TO-92 or SOT  
packages) will suffice.  
One of two things will restore operation: Cycling power  
off and then on again or pulling VIN below VSHDN and  
releasing it to a level above VREL. When one of these  
two conditions is satisfied, the normal start-up cycle is  
triggered and operation will resume if the fault has been  
cleared.  
3.3  
Start-Up Timer  
The second condition by which the TC646 asserts a  
FAULT is when the PWM control voltage applied to VIN  
becomes greater than that needed to drive 100% duty  
cycle (see Section 1.0, “Electrical Characteristics”).  
This indicates that the fan is at maximum drive and the  
potential exists for system overheating. Either heat dis-  
sipation in the system has gone beyond the cooling  
system’s design limits or some subtle fault exists (such  
as fan bearing failure or an airflow obstruction). This  
output may be treated as a “System Overheat” warning  
and be used to trigger system shutdown or some other  
corrective action.  
To ensure reliable fan start-up, the Start-up Timer turns  
the VOUT output on for 32 cycles of the PWM whenever  
the fan is started from the off state. This occurs at  
power-up and when coming out of shutdown or auto-  
shutdown mode. If the PWM frequency is 30 Hz  
(CF = 1 µF), the resulting start-up time will be approxi-  
mately one second. If a fan fault is detected, the Diag-  
nostic Timer is triggered once, followed by the Start-up  
Timer. If the fault persists, the device is shut down (see  
Section 3.5, “FAULT Output”).  
3.4  
SENSE Input  
However, in this case, the fan will continue to run even  
when FAULT is asserted. If the system is allowed to  
continue operation, and the temperature (and thus VIN)  
falls, the FAULT output will become inactive when VIN  
(FanSenseTechnology)  
The SENSE input (Pin 5) is connected to a low value  
current sensing resistor in the ground return leg of the  
fan circuit. During normal fan operation, commutation  
occurs as each pole of the fan is energized. This  
causes brief interruptions in the fan current, seen as  
pulses across the sense resistor. If the device is not in  
auto-shutdown or shutdown mode, and pulses are not  
appearing at the SENSE input, a fault exists.  
< VOTF  
.
3.6  
Auto-Shutdown Mode  
If the voltage on VIN becomes less than the voltage on  
AS, the fan is automatically shut off (auto-shutdown  
V
mode). The TC646 exits auto-shutdown mode when  
the voltage on VIN becomes higher than the voltage on  
VAS by VHAS (the auto-shutdown Hysteresis Voltage  
(see Figure 3-1)). The Start-up Timer is triggered and  
normal operation is resumed upon exiting auto-shut-  
down mode. The FAULT output is unconditionally  
inactive in auto-shutdown mode.  
The short, rapid change in fan current (high dI/dt)  
causes a corresponding dV/dt across the sense  
resistor, RSENSE  
differentiated and converted to a logic-level pulse-train  
by CSENSE and the internal signal processing circuitry.  
The presence and frequency of this pulse-train is a  
direct indication of fan operation. See Section 5.0,  
“Typical Applications”, for more details.  
. The waveform on RSENSE is  
DS21446D-page 6  
2002-2012 Microchip Technology Inc.  
 
 
TC646  
Normal  
Operation  
TC646  
Status  
Normal  
Operation  
Auto-Shutdown  
Mode  
Shut-  
Down  
Normal  
Operation  
HI  
2.6V  
V
+ V  
V
AS  
HAS  
AS  
TEMP.  
1.2V  
REL  
t
RESET  
V
IN  
V
V
SHDN  
LO  
GND  
Time  
FIGURE 3-1:  
TC646 Nominal Operation.  
If a fan fault has occurred and the device has latched  
itself into shutdown mode, performing a reset will not  
clear the fault unless VIN > (VAS + VHAS). If VIN is not  
greater than (VAS + VHAS) upon exiting shutdown  
mode, the fan will not be restarted. Consequently, there  
is no way to establish that the fan fault has been  
cleared. To ensure that a complete reset takes place,  
3.7 Shutdown Mode (Reset)  
If an unconditional shutdown and/or device reset is  
desired, the TC646 may be placed in shutdown mode  
by forcing VIN to a logic low (i.e., VIN < VSHDN) (see  
Figure 3-1). In this mode, all functions cease and the  
FAULT output is unconditionally inactive. The TC646  
should not be shut down unless all heat producing  
activity in the system is at a negligible level. The TC646  
exits shutdown mode when VIN becomes greater than  
the user’s circuitry must ensure that VIN > (VAS + VHAS  
)
when the device is released from shutdown mode. A  
recommended algorithm for management of the TC646  
by a host microcontroller or other external circuitry is  
given in Section 5.0, “Typical Applications”. A small  
amount of hysteresis, typically one percent of VDD  
VREL, the release voltage.  
Entering shutdown mode also performs a complete  
device reset. Shutdown mode resets the TC646 into its  
power-up state. The Start-up and Fault Timers, and any  
current faults, are cleared. FAULT is unconditionally  
inactive in shutdown mode. Upon exiting shutdown  
mode (VIN > VREL), the Start-up Timer will be triggered  
and normal operation will resume, assuming no fault  
conditions exist and VIN > VAS + VHAS  
(50 mV at VDD = 5.0V), is designed into the VSHDN  
/
VREL threshold. The levels specified for VSHDN and  
VREL in Section 1.0, “Electrical Characteristics”,  
include this hysteresis plus adequate margin to  
account for normal variations in the absolute value of  
the threshold and hysteresis.  
CAUTION: Shutdown mode is unconditional. That is,  
the fan will remain off as long as the VIN pin is being  
Note: If VIN < VAS when the device exits shutdown  
mode, the fan will not restart as it will be in auto-shut-  
down mode.  
held low or VIN < VAS + VHAS  
.
2002-2012 Microchip Technology Inc.  
DS21446D-page 7  
 
TC646  
4.3  
Fan Fault  
4.0  
SYSTEM BEHAVIOR  
Fan fault is an infinite loop wherein the TC646 is  
latched in shutdown mode. This mode can only be  
released by a reset (i.e., VIN being brought below  
The flowcharts describing the TC646’s behavioral  
algorithm are shown in Figure 4-1. They can be  
summarized as follows:  
VSHDN, then above (VAS + VHAS), or by power-cycling).  
4.1  
Power-Up  
(1) While in this state, FAULT is latched on (low) and  
the VOUT output is disabled.  
(1) Assuming the device is not being held in auto-shut-  
down mode (VIN > VAS)..........  
(2) A reset sequence applied to the VIN pin will exit the  
loop to Power-up.  
(2) Turn VOUT output on for 32 cycles of the PWM  
clock. This ensures that the fan will start from a  
dead stop.  
(3) End.  
(3) During this Start-up Timer, if a fan pulse is  
detected, branch to Normal Operation; if none are  
received…  
(4) Activate the 32-cycle Start-up Timer one more time  
and look for fan pulse; if a fan pulse is detected,  
proceed to Normal Operation; if none are  
received…  
(5) Proceed to Fan Fault.  
(6) End.  
4.2  
Normal Operation  
“Normal Operation” is an endless loop which may only  
be exited by entering shutdown mode, auto-shutdown  
mode or Fan Fault. The loop can be thought of as  
executing at the frequency of the oscillator and PWM.  
(1) Reset the missing pulse detector.  
(2) Is the TC646 in shutdown or auto-shutdown  
mode?  
If so...  
a. VOUT duty cycle goes to zero.  
b. FAULT is disabled.  
c. Exit the loop and wait for VIN > (VAS + VHAS) to  
resume operation.  
(3) If an over-temperature fault occurs (VIN > VOTF),  
activate FAULT; release FAULT when  
VIN< VOTF  
.
(4) Drive VOUT to a duty cycle proportional to VIN on  
a cycle by cycle basis.  
(5) If a fan pulse is detected, branch back to the  
start of the loop (1).  
(6) If the missing pulse detector times out …  
(7) Activate the 3-cycle Diagnostic Timer and look  
for pulses; if a fan pulse is detected, branch  
back to the start of the loop (1); if none are  
received…  
(8) Activate the 32-cycle Start-up Timer and look for  
pulses; if a fan pulse is detected, branch back to  
the start of the loop (1); if none are received…  
(9) Quit Normal Operation and go to Fan Fault.  
(10) End.  
DS21446D-page 8  
2002-2012 Microchip Technology Inc.  
TC646  
Normal  
Operation  
Power-Up  
Clear Missing  
Pulse Detector  
Power-on  
Reset  
FAULT = 1  
Yes  
Shutdown  
= 0  
V
< V  
?
SHDN  
IN  
V
OUT  
Yes  
Shutdown  
= 0  
V
IN  
< V ?  
SHDN  
No  
V
OUT  
No  
V
V
REL  
>
?
IN  
No  
V
> V  
REL  
No  
IN  
Yes  
Yes  
Auto  
Shutdown  
Yes  
Power-Up  
Auto-  
Shutdown  
V
< V ?  
AS  
IN  
Yes  
V
= 0  
OUT  
V
< V ?  
AS  
IN  
V
OUT = 0  
No  
No  
V
>
)
HAS  
No  
IN  
+ V  
Yes  
(V  
AS  
V
AS  
>
HAS  
No  
V
> V ?  
OTF  
IN  
+ V  
IN  
(V  
)
Yes  
No  
Hot Start  
FAULT = 0  
Yes  
Hot Start  
V
OUT  
Proportional  
to V  
Fire Start-up  
Timer  
(1 SEC)  
IN  
Yes  
No  
No  
Fire Start-up  
Timer  
(1 SEC)  
Fan Pulse  
Detected?  
Fan Pulse  
Detected?  
M.P.D.  
Expired?  
Yes  
No  
Yes  
Yes  
Fan Pulse  
Detected?  
Fire  
Diagnostic  
Timer  
(100msec)  
No  
Normal  
Operation  
Fan Fault  
No  
Yes  
Fire Start-up  
Timer  
(1 sec)  
Fan Pulse  
Detected?  
Fan Fault  
Yes  
Fan Pulse  
Detected?  
FAULT = 0,  
V
= 0  
OUT  
No  
Fan Fault  
No  
Auto-Shutdown  
FAULT = 1  
No  
Cycling  
Power  
V
< V  
?
IN  
SHDN  
V
= 0  
OUT  
Yes  
Yes  
Yes  
No  
V
> V  
REL  
?
V
> (V + V  
)?  
HAS  
IN  
IN  
AS  
No  
Yes  
Power-Up  
FIGURE 4-1:  
TC646 Behavioral Algorithm Flowchart.  
2002-2012 Microchip Technology Inc.  
DS21446D-page 9  
TC646  
The TC642 demonstration and prototyping board  
(TC642DEMO) and the TC642 Evaluation Kit  
(TC642EV) provide working examples of TC646 cir-  
cuits and prototyping aids. The TC642DEMO is a  
printed circuit board optimized for small size and ease  
of inclusion into system prototypes. The TC642EV is a  
larger board intended for benchtop development and  
analysis. At the very least, anyone contemplating a  
design using the TC646 should consult the documenta-  
tion for both TC642EV (DS21403) and TC642DEMO  
(DS21401). Figure 5-1 shows the base schematic for  
the TC642DEMO.  
5.0  
TYPICAL APPLICATIONS  
Designing with the TC646 involves the following:  
(1) The temperature sensor network must be  
configured to deliver 1.25V to 2.65V on VIN for 0%  
to 100% of the temperature range to be regulated.  
(2) The auto-shutdown temperature must be set  
with a voltage divider on VAS  
.
(3) The output drive transistor and associated circuitry  
must be selected.  
(4) The SENSE network, RSENSE and CSENSE, must  
be designed for maximum efficiency while  
delivering adequate signal amplitude.  
(5) If shutdown capability is desired, the drive require-  
ments of the external signal or circuit must be  
considered.  
+5V*  
C
1μF  
+12V  
B
NTC  
R
1
8
Fan  
Q
1
Shutdown**  
V
V
DD  
IN  
C
B
0.01μF  
6
R
2
Thermal  
Shutdown  
FAULT  
1
+5V  
R
BASE  
TC646  
7
5
V
R
OUT  
3
3
V
C
AS  
C
B
0.01μF  
SENSE  
2
C
SENSE  
R
F
4
R
SENSE  
C
1μF  
GND  
4
F
NOTES: *See cautions regarding latch-up considerations in Section 5.0, "Typical Applications".  
**Optional. See Section 5.0, "Typical Applications", for details.  
FIGURE 5-1:  
Typical Application Circuit.  
DS21446D-page 10  
2002-2012 Microchip Technology Inc.  
 
TC646  
EQUATION  
5.1  
Temperature Sensor Design  
VDD x R2  
The temperature signal connected to VIN must output a  
voltage in the range of 1.25V to 2.65V (typical) for 0%  
to 100% of the temperature range of interest. The  
circuit in Figure 5-2 illustrates a convenient way to  
provide this signal.  
= V(T1)  
RTEMP (T1) + R2  
VDD x R2  
= V(T2)  
R
TEMP (T2) + R2  
V
DD  
Where T1 and T2 are the chosen temperatures and  
RTEMP is the parallel combination of the thermistor  
and R1.  
I
DIV  
These two equations facilitate solving for the two  
unknown variables, R1 and R2. More information about  
thermistors may be obtained from AN679, Tempera-  
ture Sensing Technologies”, and AN685, “Thermistors  
In Single Supply Temperature Sensing Circuits”, which  
can be downloaded from Microchip’s web site at  
www.microchip.com.  
RT  
R = 100 kΩ  
1
1
NTC Thermistor  
100 kΩ@25˚C  
V
IN  
5.2  
Auto-Shutdown Temperature  
Design  
R = 23.2kΩ  
2
A voltage divider on VAS sets the temperature where  
the part is automatically shut down if the sensed  
temperature at VIN drops below the set temperature at  
VAS (i.e., VIN < VAS). As with the VIN input, 1.25V to  
2.65V corresponds to the temperature range of interest  
from T1 to T2, respectively. Assuming that the  
temperature sensor network designed above is linearly  
related to temperature, the shutdown temperature TAS  
is related to T2 and T1 by:  
FIGURE 5-2:  
Circuit.  
Temperature Sensing  
Figure 5-2 shows a simple temperature dependent  
voltage divider circuit. RT1 is a conventional NTC  
thermistor, while R1 and R2 are standard resistors. The  
supply voltage, VDD, is divided between R2 and the par-  
allel combination of RT1 and R1. For convenience, the  
parallel combination of RT1 and R1 will be referred to as  
RTEMP. The resistance of the thermistor at various tem-  
peratures is obtained from the manufacturer’s specifi-  
cations. Thermistors are often referred to in terms of  
their resistance at 25°C.  
EQUATION  
V
AS - 1.25V  
2.65V - 1.25V  
T2 - T1  
=
TAS - T1  
1.4V  
Generally, the thermistor shown in Figure 5-2 is a non-  
linear device with a negative temperature coefficient  
(also called an NTC thermistor). In Figure 5-2, R1 is  
used to linearize the thermistor temperature response  
and R2 is used to produce a positive temperature  
coefficient at the VIN node. As an added benefit, this  
configuration produces an output voltage delta of 1.4V,  
which is well within the range of the VC(SPAN)  
specification of the TC646. A 100 kNTC thermistor is  
selected for this application in order to keep IDIV at a  
minimum.  
)
VAS  
=
(
( TAS - T1) + 1.25V  
T2 - T1  
For example, if 1.25V and 2.65V at VIN corresponds to  
a temperature range of T1 = 0°C to T2 = 125°C, and the  
auto-shutdown temperature desired is 25°C, then VAS  
voltage is:  
EQUATION  
1.4V  
VAS  
=
(25 - 0) + 1.25V = 1.53V  
(125 - 0)  
For the voltage range at VIN to be equal to 1.25V to  
2.65V, the temperature range of this configuration is  
0°C to 50°C. If a different temperature range is required  
from this circuit, R1 should be chosen to equal the  
resistance value of the thermistor at the center of this  
new temperature range. It is suggested that a maxi-  
mum temperature range of 50°C be used with this cir-  
cuit due to thermistor linearity limitations. With this  
change, R2 is adjusted according to the following  
equations:  
The VAS voltage may be set using a simple resistor  
divider as shown in Figure 5-3.  
2002-2012 Microchip Technology Inc.  
DS21446D-page 11  
 
TC646  
5.3  
Operations at Low Duty Cycle  
V
DD  
One boundary condition which may impact the selec-  
tion of the minimum fan speed is the irregular activation  
of the Diagnostic Timer due to the TC646 “missing” fan  
commutation pulses at low speeds. This is a natural  
consequence of low PWM duty cycles (typically 25% or  
less). Recall that the SENSE function detects commu-  
tation of the fan as disturbances in the current through  
RSENSE. These can only occur when the fan is ener-  
gized (i.e., VOUT is “on”). At very low duty cycles, the  
VOUT output is “off” most of the time. The fan may be  
rotating normally, but the commutation events are  
occurring during the PWM’s off-time.  
R
R
1
I
IN  
I
V
AS  
DIV  
2
The phase relationship between the fan’s commutation  
and the PWM edges tends to “walk around” as the  
system operates. At certain points, the TC646 may fail  
to capture a pulse within the 32-cycle missing pulse  
detector window. If this happens, the 3-cycle  
Diagnostic Timer will be activated, the VOUT output will  
be active continuously for three cycles and, if the fan is  
operating normally, a pulse will be detected. If all is  
well, the system will return to normal operation. There  
is no harm in this behavior, but it may be audible to the  
user as the fan accelerates briefly when the Diagnostic  
Timer fires. For this reason, it is recommended that VAS  
be set no lower than 1.8V.  
GND  
FIGURE 5-3:  
VAS CIRCUIT  
Per Section 1.0, “Electrical Characteristics”, the leak-  
age current at the VAS pin is no more than 1 µA. It is  
conservative to design for a divider current, IDIV, of  
100 µA. If VDD = 5.0V then…  
EQUATION  
5.0V  
IDIV = 1e–4A =  
, therefore  
R1 + R2  
5.0V  
5.4  
FanSenseNetwork  
(RSENSE and CSENSE  
R1 + R2 =  
= 50,000= 50k  
)
1e–4A  
The FanSense network, comprised of RSENSE and  
CSENSE, allows the TC646 to detect commutation of  
the fan motor (FanSensetechnology). This network  
can be thought of as a differentiator and threshold  
detector. The function of RSENSE is to convert the fan  
current into a voltage. CSENSE serves to AC-couple this  
voltage signal and provide a ground-referenced input to  
the SENSE pin. Designing a proper SENSE network is  
simply a matter of scaling RSENSE to provide the  
necessary amount of gain (i.e., the current-to-voltage  
conversion ratio). A 0.1 µF ceramic capacitor is  
recommended for CSENSE. Smaller values require  
larger sense resistors, and higher value capacitors are  
bulkier and more expensive. Using a 0.1 µF capacitor  
results in reasonable values for RSENSE. Figure 5-4  
illustrates a typical SENSE network. Figure 5-5 shows  
the waveforms observed using a typical SENSE net-  
work.  
We can further specify R1 and R2 by the condition that  
the divider voltage is equal to our desired VAS. This  
yields:  
EQUATION  
V
DD x R2  
VAS  
=
R1 + R2  
Solving for the relationship between R1 and R2 results  
in:  
EQUATION  
5 - 1.53  
1.53  
VDD - VAS  
VAS  
R1 = R2 x  
= R2 x  
In the case of this example, R1 = (2.27) R2.  
Substituting this relationship back into the original  
equation yields the resistor values:  
R2 = 15.3 k, and  
R1 = 34.7 k  
In this case, the standard values of 34.8 kand  
15.4 kare very close to the calculated values and  
would be more than adequate.  
DS21446D-page 12  
2002-2012 Microchip Technology Inc.  
TC646  
TABLE 5-1:  
RSENSE VS. FAN CURRENT  
V
DD  
Nominal Fan Current (mA)  
RSENSE ()  
50  
9.1  
4.7  
3.0  
2.4  
2.0  
1.8  
1.5  
1.3  
1.2  
1.0  
100  
150  
200  
250  
300  
350  
400  
450  
500  
Fan  
R
BASE  
V
OUT  
Q
1
SENSE  
C
SENSE  
(0.1 μF Typ.)  
R
SENSE  
5.5  
Output Drive Transistor Selection  
The TC646 is designed to drive an external transistor  
or MOSFET for modulating power to the fan. This is  
shown as Q1 in Figures 5-1, 5-4, 5-6, 5-7, 5-8 and 5-9.  
The VOUT pin has a minimum source current of 5 mA  
and a minimum sink current of 1 mA. Bipolar transistors  
or MOSFETs may be used as the power switching  
element, as shown in Figure 5-7. When high current  
gain is needed to drive larger fans, two transistors may  
be used in a Darlington configuration. These circuit  
topologies are shown in Figure 5-7: (a) shows a single  
NPN transistor used as the switching element; (b)  
illustrates the Darlington pair; and (c) shows an N-  
channel MOSFET.  
GND  
FIGURE 5-4:  
SENSE Network.  
Tek Run: 10.0kS/s Sample  
[
T
]
One major advantage of the TC646’s PWM control  
scheme versus linear speed control is that the power  
dissipation in the pass element is kept very low.  
Generally, low cost devices in very small packages,  
such as TO-92 or SOT, can be used effectively. For  
fans with nominal operating currents of no more than  
200 mA, a single transistor usually suffices. Above  
200 mA, the Darlington or MOSFET solution is  
recommended. For the fan sensing function to work  
correctly, it is imperative that the pass transistor be fully  
saturated when “on”.  
Waveform @ Sense Resistor  
Waveform @ Sense Pin  
GND  
1
2
90mV  
50mV  
GND  
T
M5.00ms  
Ch1  
100mV  
142mV  
Ch1  
Ch2  
100mV  
FIGURE 5-5:  
SENSE Waveforms.  
Table 5-2 gives examples of some commonly available  
transistors and MOSFETs. This table should be used  
as a guide only since there are many transistors and  
MOSFETs which will work just as well as those listed.  
The critical issues when choosing a device to use as  
Q1 are: (1) the breakdown voltage (V(BR)CEO or VDS  
(MOSFET)) must be large enough to withstand the  
highest voltage applied to the fan (Note: This will occur  
when the fan is off); (2) 5 mA of base drive current must  
be enough to saturate the transistor when conducting  
the full fan current (transistor must have sufficient  
gain); (3) the VOUT voltage must be high enough to suf-  
ficiently drive the gate of the MOSFET to minimize the  
RDS(on) of the device; (4) rated fan current draw must  
be within the transistor's/MOSFET's current handling  
capability; and (5) power dissipation must be kept  
within the limits of the chosen device.  
Table 5-1 lists the recommended values of RSENSE  
based on the nominal operating current of the fan. Note  
that the current draw specified by the fan manufacturer  
may be a worst-case rating for near-stall conditions and  
not the fan’s nominal operating current. The values in  
Table 5-1 refer to actual average operating current. If  
the fan current falls between two of the values listed,  
use the higher resistor value. The end result of employ-  
ing Table 5-1 is that the signal developed across the  
sense resistor is approximately 450 mV in amplitude.  
2002-2012 Microchip Technology Inc.  
DS21446D-page 13  
 
 
TC646  
A base-current limiting resistor is required with bipolar  
transistors. This is shown in Figure 5-6.  
The correct value for this resistor can be determined as  
follows:  
VOH  
= VRSENSE + VBE(SAT) + VRBASE  
V
DD  
VRSENSE = IFAN x RSENSE  
VRBASE  
IBASE  
= RBASE x IBASE  
= IFAN / hFE  
VOH is specified as 80% of VDD in Section 1.0,  
“Electrical Characteristics”; VBE is given in the  
chosen transistor data sheet. It is(nSoATw) possible to solve  
for RBASE  
Fan  
.
R
BASE  
EQUATION  
RBASE  
V
= 80% V  
DD  
OH  
Q
1
+
BE  
+
V
V
OH - VBE(SAT) - VRSENSE  
R
BASE  
=
V
IBASE  
(SAT)  
+
V
Some applications benefit from the fan being powered  
from a negative supply to keep motor noise out of the  
positive supply rails. This can be accomplished as  
shown in Figure 5-8. Zener diode D1 offsets the -12V  
power supply voltage, holding transistor Q1 off when  
VOUT is low. When VOUT is high, the voltage at the  
anode of D1 increases by VOUT, causing Q1 to turn on.  
Operation is otherwise the same as in the case of fan  
operation from +12V.  
R
R
SENSE  
SENSE  
GND  
FIGURE 5-6:  
Circuit For Determining  
RBASE  
.
V
V
V
DD  
DD  
DD  
Fan  
Fan  
Fan  
R
BASE  
R
BASE  
V
OUT  
Q
1
V
Q
OUT  
1
Q
V
1
OUT  
Q
2
R
R
SENSE  
SENSE  
R
SENSE  
GND  
GND  
a) Single Bipolar Transistor  
GND  
b) Darlington Transistor Pair  
c) N-Channel MOSFET  
FIGURE 5-7:  
Output Drive Transistor Circuit Topologies.  
DS21446D-page 14  
2002-2012 Microchip Technology Inc.  
 
TC646  
+5V  
V
DD  
R *  
2
2.2 kΩ  
V
OUT  
D
12.0V  
Zener  
1
Fan  
TC646  
Q *  
1
R *  
4
10 kΩ  
R *  
3
2.2Ω  
GND  
-12V  
NOTE: *Value depends on the specific application and is shown for example only.  
FIGURE 5-8:  
Power the Fan from a -12V Supply.  
TABLE 5-2:  
Device  
TRANSISTORS AND MOSFETS FOR Q1 (VDD = 5V)  
Max. VBE(sat)/VGS  
(V)  
VCEO/VDS Fan Current  
Suggested  
RBASE ()  
Package  
Min. HFE  
(V)  
(mA)  
MMBT2222A  
MPS2222A  
MPS6602  
SI2302  
SOT-23  
TO-92  
TO-92  
1.2  
1.2  
1.2  
2.5  
2.5  
4.5  
4.5  
50  
50  
40  
40  
40  
20  
20  
30  
60  
150  
150  
500  
500  
500  
1000  
500  
800  
800  
50  
301  
SOT-23  
SOT-23  
SO-8  
NA  
NA  
NA  
NA  
Note 1  
Note 1  
Note 1  
Note 1  
MGSF1N02E  
SI4410  
SI2308  
SOT-23  
Note 1: A series gate resistor may be used in order to control the MOSFET turn-on and turn-off times.  
5.6  
Latch-up Considerations  
5.7  
Power Supply Routing and  
Bypassing  
As with any CMOS IC, the potential exists for latch-up  
if signals are applied to the device which are outside  
the power supply range. This is of particular concern  
during power-up if the external circuitry (such as the  
sensor network, VAS divider or shutdown circuit) is  
powered by a supply different from that of the TC646.  
Care should be taken to ensure that the TC646’s VDD  
supply powers up first. If possible, the networks  
attached to VIN and VAS should connect to the VDD sup-  
ply at the same physical location as the IC itself. Even  
if the IC and any external networks are powered by the  
same supply, physical separation of the connecting  
points can result in enough parasitic capacitance and/  
or inductance in the power supply connections to delay  
one power supply “routing” versus another.  
Noise present on the VIN and VAS inputs may cause  
erroneous operation of the FAULT output. As a result,  
these inputs should be bypassed with a 0.01 µF  
capacitor mounted as close to the package as possible.  
This is especially true of VIN, which is usually driven  
from a high impedance source (such as a thermistor).  
In addition, the VDD input should be bypassed with a  
1 µF capacitor. Grounds should be kept as short as  
possible. To keep fan noise off the TC646 ground pin,  
individual ground returns for the TC646 and the low  
side of the fan current sense resistor should be used.  
2002-2012 Microchip Technology Inc.  
DS21446D-page 15  
 
TC646  
Design Example  
Step 1. Calculate R1 and R2 based on using an NTC  
having a resistance of 10 kat TMIN (25°C)  
and 4.65 kat TMAX (45°C) (See Figure 5-9).  
R1 = 20.5 k  
R2 = 3.83 k  
Step 2. Set auto-shutdown level VAS = 1.8V.  
Limit the divider current to 100 µA from which  
R5 = 33 k  
R6 = 18 k  
Step 3. Design the output circuit.  
Maximum fan motor current = 250 mA. Q1  
beta is chosen at 50 from which R7 = 800 .  
+5V  
+12V  
+5V  
NTC  
10 kΩ  
@ 25˚C  
C
1 μF  
B
R
1
Open-Drain  
Device  
20.5 kΩ  
4
8
Fan  
Q
Reset  
Shutdown  
1
V
V
DD  
GND  
IN  
C
B
0.01 μF  
R
2
3.83 kΩ  
6
Fan/Thermal  
Fault  
FAULT  
1
(Optional)  
R
+5V  
7
800Ω  
TC646  
7
5
V
R
OUT  
5
33 kΩ  
3
V
C
AS  
C
B
SENSE  
0.01 μF  
2
C
SENSE  
0.1 μF  
R
6
18 kΩ  
F
R
SENSE  
2.2Ω  
C
1
1 μF  
FIGURE 5-9:  
Design Example.  
With VAS set at 1.8V, the TC646 enters auto-shutdown  
when the controller's output code is 000[B]. Output  
codes 001[B] to 111[B] operate the fan from roughly  
40% to 100% of full speed. An open-drain output from  
the processor (I/O0) can be used to reset the TC646  
following detection of a fault condition. The FAULT out-  
put can be connected to the controller's interrupt input,  
or to another I/O pin, for polled operation.  
5.8  
TC646 as a Microcontroller  
Peripheral  
In a system containing a microcontroller or other host  
intelligence, the TC646 can be effectively managed as  
a CPU peripheral. Routine fan control functions can be  
performed by the TC646 without controller intervention.  
The microcontroller receives temperature data from  
one or more points throughout the system. It calculates  
a fan operating speed based on an algorithm specifi-  
cally designed for the application at hand. The proces-  
sor controls fan speed using complementary port bits  
I/O1 through I/O3. Resistors R1 through R6 (5% toler-  
ance) form a crude 3-bit DAC that translates the 3-bit  
code from the processor's outputs into a 1.6V DC con-  
trol signal. A monolithic DAC or digital pot may be used  
instead of the circuit shown in Figure 5-10.  
DS21446D-page 16  
2002-2012 Microchip Technology Inc.  
 
TC646  
+12V  
+5V  
(RESET)  
Open-Drain  
Outputs  
(Optional)  
I/O0  
+5V  
Fan  
R
1
110 kΩ  
1
2
8
(MSB)  
V
C
V
I/O1  
I/O2  
I/O3  
IN  
DD  
+
C
B
C
R
2
240 kΩ  
B
Analog or Digital  
Temperature  
Data from one or  
more Sensors  
1 μF  
R
800Ω  
.01 μF  
CMOS  
Outputs  
9
7
R
3
360 kΩ  
F
V
OUT  
2N2222A  
+
+5V  
TC646  
1 μF  
R
7
33 kΩ  
(LSB)  
+5V  
R
10  
10 kΩ  
CMOS  
R
4
3
6
5
R
V
AS  
18 k  
5
Ω
FAULT  
Microcontroller  
C
B
+5V  
1.5 kΩ  
R
18 kΩ  
8
.01 μF  
0.1 μF  
4
R
6
SENSE  
GND  
1 kΩ  
R
11  
2.2Ω  
GND  
INT  
FIGURE 5-10:  
TC646 as a Microcontroller Peripheral.  
V
vs.Temperature  
RELEASE  
1.0  
0.9  
V
= 5.5V  
= 5.0V  
DD  
V
DD  
0.8  
0.7  
V
DD  
= 4.0V  
0.6  
V
DD  
= 3.0V  
0.5  
0.4  
0˚C  
25˚C  
TEMPERATURE  
85˚C  
FIGURE 5-11:  
VRELEASE vs. Temperature.  
2002-2012 Microchip Technology Inc.  
DS21446D-page 17  
TC646  
6.0  
6.1  
PACKAGING INFORMATION  
Package Marking Information  
8-Lead PDIP (300 mil)  
Example:  
XXXXXXXX  
NNN  
TC646VPA  
025  
YYWW  
0215  
8-Lead SOIC (150 mil)  
Example:  
XXXXXXXX  
YYWW  
TC646VOA  
0215  
NNN  
025  
Example:  
8-Lead MSOP  
TC646E  
XXXXXX  
YWWNNN  
215025  
Legend: XX...X Customer-specific information  
Y
YY  
WW  
NNN  
Year code (last digit of calendar year)  
Year code (last 2 digits of calendar year)  
Week code (week of January 1 is week ‘01’)  
Alphanumeric traceability code  
e
3
Pb-free JEDEC designator for Matte Tin (Sn)  
*
This package is Pb-free. The Pb-free JEDEC designator (  
can be found on the outer packaging for this package.  
)
e3  
Note: In the event the full Microchip part number cannot be marked on one line, it will  
be carried over to the next line, thus limiting the number of available  
characters for customer-specific information.  
DS21446D-page 18  
2002-2012 Microchip Technology Inc.  
TC646  
8-Lead Plastic Dual In-line (P) – 300 mil (PDIP)  
Note: For the most current package drawings, please see the Microchip Packaging Specification located  
at http://www.microchip.com/packaging  
E1  
D
2
n
1
E
A2  
A
L
c
A1  
B1  
B
p
eB  
Units  
INCHES*  
NOM  
MILLIMETERS  
Dimension Limits  
MIN  
MAX  
MIN  
NOM  
8
MAX  
n
p
Number of Pins  
Pitch  
8
.100  
.155  
.130  
2.54  
Top to Seating Plane  
A
.140  
.170  
3.56  
2.92  
3.94  
3.30  
4.32  
Molded Package Thickness  
Base to Seating Plane  
Shoulder to Shoulder Width  
Molded Package Width  
Overall Length  
A2  
A1  
E
.115  
.015  
.300  
.240  
.360  
.125  
.008  
.045  
.014  
.310  
5
.145  
3.68  
0.38  
7.62  
6.10  
9.14  
3.18  
0.20  
1.14  
0.36  
7.87  
5
.313  
.250  
.373  
.130  
.012  
.058  
.018  
.370  
10  
.325  
.260  
.385  
.135  
.015  
.070  
.022  
.430  
15  
7.94  
6.35  
9.46  
3.30  
0.29  
1.46  
0.46  
9.40  
10  
8.26  
6.60  
9.78  
3.43  
0.38  
1.78  
0.56  
10.92  
15  
E1  
D
Tip to Seating Plane  
Lead Thickness  
L
c
Upper Lead Width  
B1  
B
Lower Lead Width  
Overall Row Spacing  
Mold Draft Angle Top  
Mold Draft Angle Bottom  
§
eB  
5
10  
15  
5
10  
15  
* Controlling Parameter  
§ Significant Characteristic  
Notes:  
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed  
.010” (0.254mm) per side.  
JEDEC Equivalent: MS-001  
Drawing No. C04-018  
2002-2012 Microchip Technology Inc.  
DS21446D-page 19  
TC646  
8-Lead Plastic Small Outline (SN) – Narrow, 150 mil (SOIC)  
Note: For the most current package drawings, please see the Microchip Packaging Specification located  
at http://www.microchip.com/packaging  
E
E1  
p
D
2
B
n
1
h
45×  
c
A2  
A
f
L
A1  
Units  
INCHES*  
NOM  
MILLIMETERS  
Dimension Limits  
MIN  
MAX  
MIN  
NOM  
8
MAX  
n
p
Number of Pins  
Pitch  
8
.050  
.061  
.056  
.007  
.237  
.154  
.193  
.015  
.025  
4
1.27  
Overall Height  
A
.053  
.069  
1.35  
1.32  
1.55  
1.42  
0.18  
6.02  
3.91  
4.90  
0.38  
0.62  
4
1.75  
Molded Package Thickness  
Standoff  
A2  
A1  
E
.052  
.004  
.228  
.146  
.189  
.010  
.019  
0
.061  
.010  
.244  
.157  
.197  
.020  
.030  
8
1.55  
0.25  
6.20  
3.99  
5.00  
0.51  
0.76  
8
§
0.10  
5.79  
3.71  
4.80  
0.25  
0.48  
0
Overall Width  
Molded Package Width  
Overall Length  
E1  
D
h
Chamfer Distance  
Foot Length  
L
f
Foot Angle  
c
Lead Thickness  
Lead Width  
.008  
.013  
0
.009  
.017  
12  
.010  
.020  
15  
0.20  
0.33  
0
0.23  
0.42  
12  
0.25  
0.51  
15  
B
Mold Draft Angle Top  
Mold Draft Angle Bottom  
0
12  
15  
0
12  
15  
* Controlling Parameter  
§ Significant Characteristic  
Notes:  
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed  
.010” (0.254mm) per side.  
JEDEC Equivalent: MS-012  
Drawing No. C04-057  
DS21446D-page 20  
2002-2012 Microchip Technology Inc.  
TC646  
8-Lead Plastic Micro Small Outline Package (MS) (MSOP)  
Note: For the most current package drawings, please see the Microchip Packaging Specification located  
at http://www.microchip.com/packaging  
E
p
E1  
D
2
B
n
1
A2  
A
c
A1  
(F)  
L
Units  
Dimension Limits  
INCHES  
NOM  
MILLIMETERS*  
NOM  
MIN  
MAX  
MIN  
MAX  
n
p
Number of Pins  
Pitch  
8
8
.026  
0.65  
Overall Height  
A
A2  
A1  
E
.044  
1.18  
Molded Package Thickness  
Standoff  
.030  
.034  
.038  
.006  
.200  
.122  
.122  
.028  
.039  
0.76  
0.05  
0.86  
0.97  
0.15  
.5.08  
3.10  
3.10  
0.70  
1.00  
§
.002  
.184  
.114  
.114  
.016  
.035  
Overall Width  
.193  
.118  
.118  
.022  
.037  
4.90  
3.00  
3.00  
0.55  
0.95  
4.67  
2.90  
2.90  
0.40  
0.90  
Molded Package Width  
Overall Length  
E1  
D
Foot Length  
L
Footprint (Reference)  
Foot Angle  
F
0
6
0
6
c
Lead Thickness  
Lead Width  
.004  
.010  
.006  
.012  
.008  
.016  
0.10  
0.25  
0.15  
0.30  
0.20  
0.40  
B
Mold Draft Angle Top  
Mold Draft Angle Bottom  
7
7
7
7
*Controlling Parameter  
§ Significant Characteristic  
Notes:  
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not  
exceed. 010" (0.254mm) per side.  
Drawing No. C04-111  
2002-2012 Microchip Technology Inc.  
DS21446D-page 21  
TC646  
6.2  
Taping Form  
Component Taping Orientation for 8-Pin MSOP Devices  
User Direction of Feed  
PIN 1  
W
P
Standard Reel Component Orientation  
for 713 Suffix Device  
Carrier Tape, Number of Components Per Reel and Reel Size  
Package  
Carrier Width (W)  
Pitch (P)  
Part Per Full Reel  
Reel Size  
8-Pin MSOP  
12 mm  
8 mm  
2500  
13 in  
Component Taping Orientation for 8-Pin SOIC (Narrow) Devices  
User Direction of Feed  
PIN 1  
W
P
Standard Reel Component Orientation  
for 713 Suffix Device  
Carrier Tape, Number of Components Per Reel and Reel Size  
Package  
Carrier Width (W)  
Pitch (P)  
Part Per Full Reel  
Reel Size  
8-Pin SOIC (N)  
12 mm  
8 mm  
2500  
13 in  
DS21446D-page 22  
2002-2012 Microchip Technology Inc.  
TC646  
7.0  
REVISION HISTORY  
Revision D (December 2012)  
Added a note to each package outline drawing.  
2002-2012 Microchip Technology Inc.  
DS21446D-page 23  
TC646  
NOTES:  
DS21446D-page 24  
2002-2012 Microchip Technology Inc.  
THE MICROCHIP WEB SITE  
CUSTOMER SUPPORT  
Microchip provides online support via our WWW site at  
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2002-2012 Microchip Technology Inc.  
DS21446D-page 25  
READER RESPONSE  
It is our intention to provide you with the best documentation possible to ensure successful use of your Microchip  
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DS21446D-page 26  
2002-2012 Microchip Technology Inc.  
TC646  
PRODUCT IDENTIFICATION SYSTEM  
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.  
PART NO.  
Device  
X
/XX  
Examples:  
Temperature Package  
Range  
a)  
b)  
c)  
d)  
TC646VOA: PWM Fan Speed Controller w/  
Auto Shutdown and Fault Detection, SOIC  
package.  
TC646VUA: PWM Fan Speed Controller w/  
Auto Shutdown and Fault Detection, MSOP  
package.  
Device:  
TC646:  
and Fault Detection  
PWM Fan Speed Controller w/Auto Shutdown  
TC646VPA: PWM Fan Speed Controller w/  
Auto Shutdown and Fault Detection, PDIP  
package.  
Temperature Range:  
Package:  
V
E
=
=
0C to +85C  
-40C to +85C  
TC646EOA713:PWM Fan Speed Controller  
w/Auto Shutdown and Fault Detection, SOIC  
package, Tape and Reel.  
PA  
OA  
UA  
=
=
=
Plastic DIP (300 mil Body), 8-lead *  
Plastic SOIC, (150 mil Body), 8-lead  
Plastic Micro Small Outline (MSOP), 8-lead  
* PDIP package is only offerred in the V temp range  
Sales and Support  
Data Sheets  
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recom-  
mended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:  
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Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.  
New Customer Notification System  
Register on our web site (www.microchip.com/cn) to receive the most current information on our products.  
2002-2012 Microchip Technology Inc.  
DS21446D-page27  
TC646  
NOTES:  
DS21446D-page 28  
2002-2012 Microchip Technology Inc.  
Note the following details of the code protection feature on Microchip devices:  
Microchip products meet the specification contained in their particular Microchip Data Sheet.  
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the  
intended manner and under normal conditions.  
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our  
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data  
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.  
Microchip is willing to work with the customer who is concerned about the integrity of their code.  
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not  
mean that we are guaranteeing the product as “unbreakable.”  
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our  
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts  
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.  
Information contained in this publication regarding device  
applications and the like is provided only for your convenience  
and may be superseded by updates. It is your responsibility to  
ensure that your application meets with your specifications.  
MICROCHIP MAKES NO REPRESENTATIONS OR  
WARRANTIES OF ANY KIND WHETHER EXPRESS OR  
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OTHERWISE, RELATED TO THE INFORMATION,  
INCLUDING BUT NOT LIMITED TO ITS CONDITION,  
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intellectual property rights.  
Trademarks  
The Microchip name and logo, the Microchip logo, dsPIC,  
FlashFlex, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro,  
PICSTART, PIC logo, rfPIC, SST, SST Logo, SuperFlash  
and UNI/O are registered trademarks of Microchip Technology  
Incorporated in the U.S.A. and other countries.  
32  
FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,  
MTP, SEEVAL and The Embedded Control Solutions  
Company are registered trademarks of Microchip Technology  
Incorporated in the U.S.A.  
Silicon Storage Technology is a registered trademark of  
Microchip Technology Inc. in other countries.  
Analog-for-the-Digital Age, Application Maestro, BodyCom,  
chipKIT, chipKIT logo, CodeGuard, dsPICDEM,  
dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,  
ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial  
Programming, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB  
Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code  
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Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA  
and Z-Scale are trademarks of Microchip Technology  
Incorporated in the U.S.A. and other countries.  
SQTP is a service mark of Microchip Technology Incorporated  
in the U.S.A.  
GestIC and ULPP are registered trademarks of Microchip  
Technology Germany II GmbH & Co. & KG, a subsidiary of  
Microchip Technology Inc., in other countries.  
All other trademarks mentioned herein are property of their  
respective companies.  
© 2002-2012, Microchip Technology Incorporated, Printed in  
the U.S.A., All Rights Reserved.  
Printed on recycled paper.  
ISBN: 9781620768273  
QUALITY MANAGEMENT SYSTEM  
CERTIFIED BY DNV  
Microchip received ISO/TS-16949:2009 certification for its worldwide  
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Tempe, Arizona; Gresham, Oregon and design centers in California  
and India. The Company’s quality system processes and procedures  
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping  
devices, Serial EEPROMs, microperipherals, nonvolatile memory and  
analog products. In addition, Microchip’s quality system for the design  
and manufacture of development systems is ISO 9001:2000 certified.  
== ISO/TS 16949 ==  
2002-2012 Microchip Technology Inc.  
DS21446D-page 29  
Worldwide Sales and Service  
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11/29/12  
DS21446D-page 30  
2002-2012 Microchip Technology Inc.  

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