TC6320 [MICROCHIP]
N-Channel and P-Channel Enhancement-Mode MOSFET Pair;
| 型号： | TC6320 |
| 厂家： | 
MICROCHIP |
| 描述： | N-Channel and P-Channel Enhancement-Mode MOSFET Pair |
| 文件： | 总14页 (文件大小：596K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TC6320
N-Channel and P-Channel Enhancement-Mode MOSFET Pair
Features
General Description
• Integrated Gate-to-source Resistor
• Integrated Gate-to-source Zener Diode
• Low Threshold
The TC6320 consists of high-voltage, low-threshold
N-channel and P-channel MOSFETs in 8-lead SOIC
and DFN packages. Both MOSFETs have integrated
gate-to-source resistors and gate-to-source Zener
diode clamps which are desired for high-voltage pulser
• Low On-resistance
• Low Input Capacitance
applications. It is
a complimentary, high-speed,
• Fast Switching Speeds
high-voltage, gate-clamped N-channel and P-channel
MOSFET pair, which utilizes an advanced vertical
DMOS structure and a well-proven silicon gate
manufacturing process. This combination produces a
device with the power handling capabilities of bipolar
transistors and with the high input impedance and
positive temperature coefficient inherent in MOS
devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally
induced secondary breakdown.
• Free from Secondary Breakdown
• Low Input and Output Leakage
• Independent Electrically Isolated N-channel and
P-channel
Applications
• High-voltage Pulsers
• Amplifiers
Microchip’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications
where very low threshold voltage, high breakdown
voltage, high input impedance, low input capacitance
and fast switching speeds are desired.
• Buffers
• Piezoelectric Transducer Drivers
• General Purpose Line Drivers
• Logic-level Interfaces
Package Types
8-lead SOIC
5-lead DFN
(Top view)
(Top view)
SN
GN
SP
GP
1
2
3
4
8
7
6
5
DN
DN
DP
DP
1
2
3
4
8
7
6
5
SN
GN
GP
SP
DN
DN
DP
DP
DN
DP
See Table 2-1 and Table 2-2 for pin information.
2017 Microchip Technology Inc.
DS20005697A-page 1
TC6320
Functional Block Diagram
SN
GN
DN
DN
N-Channel
P-Channel
GP
SP
DP
DP
DS20005697A-page 2
2017 Microchip Technology Inc.
TC6320
Typical Application Circuit
+100V
VH
VDD
OE
10nF
10nF
INA
INB
-100V
VL
VSS
MD12xx, MD17xx, or MD18xx
TC6320
2017 Microchip Technology Inc.
DS20005697A-page 3
TC6320
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings†
Drain-to-source Voltage ........................................................................................................................................ BVDSS
Drain-to-gate Voltage ........................................................................................................................................... BVDGS
Operating Ambient Temperature, TA ................................................................................................... –55°C to +150°C
Storage Temperature, TS ..................................................................................................................... –55°C to +150°C
† Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only, and functional operation of the device at those or any other conditions above those
indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for
extended periods may affect device reliability.
N-CHANNEL ELECTRICAL CHARACTERISTICS
Electrical Specifications: TA = TJ = 25°C unless otherwise specified.
Parameter
Sym.
Min. Typ. Max.
Unit
Conditions
DC PARAMETER (Note 1 unless otherwise specified)
Drain-to-source Breakdown Voltage
Gate Threshold Voltage
BVDSS
VGS(th)
∆VGS(th)
RGS
200
1
—
—
—
—
—
—
2
V
V
VGS = 0V, ID = 2 mA
VGS = VDS, ID = 1 mA
Change in VGS(th) with Temperature
Gate-to-source Shunt Resistor
Gate-to-Source Zener Voltage
—
–4.5 mV/°C VGS = VDS, ID = 1 mA (Note 2)
10
50
25
kΩ
IGS = 100 µA
IGS = 2 mA
VZGS
13.2
V
V
DS = Maximum rating,
—
—
—
—
10
1
µA
VGS = 0V
Zero-gate Voltage Drain Current
On-state Drain Current
IDSS
VDS = 0.8 Maximum rating,
VGS = 0V, TA = 125°C (Note 2)
mA
1
—
—
—
—
—
—
—
8
VGS = 4.5V, VDS = 25V
ID(ON)
A
2
V
GS = 10V, VDS = 25V
VGS = 4.5V, ID = 150 mA
GS = 10V, ID = 1A
—
—
—
Static Drain-to-source On-state
Resistance
RDS(ON)
Ω
7
V
Change in RDS(ON) with Temperature ∆RDS(ON)
1
%/°C VGS = 4.5V, ID = 150 mA (Note 2)
AC PARAMETER (Note 2)
Forward Transconductance
Input Capacitance
GFS
CISS
COSS
CRSS
td(ON)
tr
400
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
110
60
23
10
15
20
15
mmho VDS = 25V, ID = 500 mA
pF
VGS = 0V,
pF
pF
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
VDS = 25V,
f = 1 MHz
ns
ns
ns
ns
V
DD = 25V,
Rise Time
ID = 1A,
RGEN = 25ꢀ
Turn-off Delay Time
td(OFF)
tf
Fall Time
DIODE PARAMETER
Diode Forward Voltage Drop
Reverse Recovery Time
VSD
trr
—
—
—
1.8
—
V
VGS = 0V, ISD = 500 mA (Note 1)
VGS = 0V, ISD = 500 mA (Note 2)
300
ns
Note 1: All DC parameters are 100% tested at 25°C unless otherwise stated. Pulse test: 300 µs pulse, 2% duty
cycle.
2: Specification is obtained by characterization and is not 100% tested.
DS20005697A-page 4
2017 Microchip Technology Inc.
TC6320
P-CHANNEL ELECTRICAL CHARACTERISTICS
Electrical Specifications: TA = TJ = 25°C unless otherwise specified.
Parameter
Sym.
Min. Typ. Max.
Unit
Conditions
DC PARAMETER (Note 1 unless otherwise specified)
Drain-to-source Breakdown Voltage
Gate Threshold Voltage
BVDSS –200
—
—
—
—
—
—
V
V
VGS = 0V, ID = –2 mA
VGS = VDS, ID = –1 mA
VGS(th)
∆VGS(th)
RGS
–1
—
–2.4
Change in VGS(th) with Temperature
Gate-to-source Shunt Resistor
Gate-to-Source Zener Voltage
4.5 mV/°C VGS = VDS, ID = –1 mA (Note 2)
10
50
25
kꢀ
IGS = 100 µA
IGS = –2 mA
VZGS
13.2
V
VDS = Maximum rating,
VGS = 0V
—
—
—
—
–10
–1
µA
Zero-gate Voltage Drain Current
On-state Drain Current
IDSS
VDS = 0.8 Maximum rating,
mA
VGS = 0V, TA = 125°C (Note 2)
VGS = –4.5V, VDS = –25V
VGS = –10V, VDS = –25V
VGS = –4.5V, ID = –150 mA
–1
–2
—
—
—
—
—
—
—
—
—
—
10
8
ID(ON)
A
Static Drain-to-source On-state
Resistance
RDS(ON)
ꢀ
VGS = –10V, ID = –1A
Change in RDS(ON) with Temperature ∆RDS(ON)
1
%/°C VGS = –10V, ID = –200 mA (Note 2)
AC PARAMETER (Note 2)
Forward Transconductance
Input Capacitance
GFS
400
—
—
—
—
mmho VDS = –25V, ID = –500 mA
pF
CISS
200
VGS = 0V,
Common Source Output
Capacitance
pF
pF
COSS
—
—
55
VDS = –25V,
f = 1 MHz
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
CRSS
td(ON)
tr
—
—
—
—
—
—
—
—
—
—
30
10
15
20
15
ns
ns
ns
ns
V
DD = –25V,
ID = –1A,
RGEN = 25ꢀ
Turn-off Delay Time
Fall Time
td(OFF)
tf
DIODE PARAMETER
Diode Forward Voltage Drop
Reverse Recovery Time
VSD
trr
—
—
—
–1.8
—
V
VGS = 0V, ISD = –500 mA (Note 1)
VGS = 0V, ISD = –500 mA (Note 2)
300
ns
Note 1: All DC parameters are 100% tested at 25°C unless otherwise stated. Pulse test: 300 µs pulse, 2% duty
cycle.
2: Specification is obtained by characterization and is not 100% tested.
TEMPERATURE SPECIFICATIONS
Electrical Characteristics: Unless otherwise specified, for all specifications TA =TJ = +25°C.
Parameter
Sym.
Min.
Typ.
Max.
Unit
Conditions
TEMPERATURE RANGE
Operating Ambient Temperature
Storage Temperature
TA
TS
–55°C
–55°C
—
—
+150
+150
°C
°C
PACKAGE THERMAL RESISTANCE
8-lead DFN
JA
JA
—
—
44
—
—
°C/W Note 1
°C/W Note 1
8-lead SOIC
101
Note 1: 1 oz., four-layer, 3” x 4” PCB
2017 Microchip Technology Inc.
DS20005697A-page 5
TC6320
2.0
PIN DESCRIPTION
Table 2-1 and Table 2-2 show the description of pins in
TC6320 8-lead DFN and 8-lead SOIC, respectively.
Refer to Package Types for the location of pins.
TABLE 2-1:
Pin Number
8-LEAD DFN PIN FUNCTION TABLE
Pin Name
Description
1
2
3
4
5
6
7
8
SN
GN
GP
SP
DP
DP
DN
DN
Source N-channel
Gate N-channel
Gate P-channel
Source P-channel
Drain P-channel
Drain P-channel
Drain N-channel
Drain N-channel
TABLE 2-2:
Pin Number
8-LEAD SOIC FUNCTION TABLE
Pin Name
Description
1
2
3
4
5
6
7
8
SN
GN
SP
GP
DP
DP
DN
DN
Source N-channel
Gate N-channel
Source P-channel
Gate P-channel
Drain P-channel
Drain P-channel
Drain N-channel
Drain N-channel
DS20005697A-page 6
2017 Microchip Technology Inc.
TC6320
3.0
FUNCTIONAL DESCRIPTION
Figure 3-1 and Figure 3-2 illustrate the switching
waveforms and test circuits for TC6320.
10V
90%
VDD
Input
RL
10%
0V
Pulse
OUTPUT
Generator
t(ON)
td(ON)
t(OFF)
td(OFF)
RGEN
tr
tf
D.U.T
VDD
Output
10%
90%
10%
90%
Input
0V
FIGURE 3-1:
N-Channel Switching Waveforms and Test Circuit.
0V
10%
Pulse
Generator
Input
90%
RGEN
-10V
D.U.T
t(ON)
td(ON)
t(OFF)
Input
tr
tf
td(OFF)
90%
10%
OUTPUT
RL
0V
Output
VDD
90%
10%
VDD
FIGURE 3-2:
P-Channel Switching Waveforms and Test Circuit.
PRODUCT SUMMARY
RDS(ON)
(Maximum)
(Ω)
BVDSS/BVDGS
(V)
N-Channel
P-Channel
N-Channel
P-Channel
200
–200
7
8
2017 Microchip Technology Inc.
DS20005697A-page 7
TC6320
4.0
4.1
PACKAGING INFORMATION
Package Marking Information
Example
8-lead DFN
TC6320
XXXXXXX
XXXXXXX
K6
e3
e3
1715
YYWW
222
NNN
Example
8-lead SOIC
TC6320TG
XXXXXXX
e3
e3
1727
YYWW
NNN
555
Legend: XX...X Product Code or Customer-specific information
Y
Year code (last digit of calendar year)
YY
WW
NNN
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC® designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( )
e
3
*
e
3
can be found on the outer packaging for this package.
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for product code or customer-specific information. Package may or
not include the corporate logo.
DS20005697A-page 8
2017 Microchip Technology Inc.
TC6320
Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging.
2017 Microchip Technology Inc.
DS20005697A-page 9
TC6320
Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging.
DS20005697A-page 10
2017 Microchip Technology Inc.
TC6320
APPENDIX A: REVISION HISTORY
Revision A (October 2017)
• Converted Supertex Doc# DSFP-TC6320 to
Microchip DS20005697A
• Changed the package marking format
• Changed the quantity of the
8-lead DFN K6 package from 3000/Reel
to 3300/Reel
• Changed the quantity of the 8-lead SOIC TG
package from 2000/Reel to 3300/Reel
• Made minor text changes throughout the docu-
ment
2017 Microchip Technology Inc.
DS20005697A-page 11
TC6320
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, contact your local Microchip representative or sales office.
Examples:
XX
PART NO.
Device
-
X
-
X
Package
Options
Environmental
Media Type
a) TC6320K6-G:
b) TC6320TG-G:
N-Channel and P-Channel
Enhancement-ModeMOSFETPair,
8‐lead (4x4) VDFN, 3300/Reel
Device:
TC6320
=
N-Channel and P-Channel Enhancement-
Mode MOSFET Pair
N-Channel and P-Channel
Enhancement-ModeMOSFETPair,
8-lead SOIC, 3300/Reel
Packages:
K6
=
=
8-lead (4x4) VDFN
8-lead SOIC
TG
Environmental:
Media Type:
G
=
Lead (Pb)-free/RoHS-compliant Package
(blank)
=
=
3300/Reel for a K6 Package
3300/Reel for a TG Package
DS20005697A-page 12
2017 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
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and may be superseded by updates. It is your responsibility to
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OTHERWISE, RELATED TO THE INFORMATION,
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QUALITYꢀMANAGEMENTꢀꢀSYSTEMꢀ
CERTIFIEDꢀBYꢀDNVꢀ
© 2017, Microchip Technology Incorporated, All Rights Reserved.
ISBN: 978-1-5224-2207-5
== ISO/TSꢀ16949ꢀ==ꢀ
2017 Microchip Technology Inc.
DS20005697A-page 13
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China - Wuhan
Tel: 86-27-5980-5300
Fax: 86-27-5980-5118
Taiwan - Taipei
Tel: 886-2-2508-8600
Fax: 886-2-2508-0102
New York, NY
Tel: 631-435-6000
Sweden - Gothenberg
Tel: 46-31-704-60-40
San Jose, CA
Tel: 408-735-9110
Tel: 408-436-4270
China - Xian
Tel: 86-29-8833-7252
Fax: 86-29-8833-7256
Thailand - Bangkok
Tel: 66-2-694-1351
Fax: 66-2-694-1350
Sweden - Stockholm
Tel: 46-8-5090-4654
Canada - Toronto
Tel: 905-695-1980
Fax: 905-695-2078
UK - Wokingham
Tel: 44-118-921-5800
Fax: 44-118-921-5820
DS20005697A-page 14
2017 Microchip Technology Inc.
11/07/16
相关型号：
TC6335AF
IC SPECIALTY ANALOG CIRCUIT, PQFP100, 14 X 14 MM, 0.50 MM PITCH, PLASTIC, LQFP-100, Analog IC:Other
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