TC1305R-DVUN

更新时间:2024-09-18 01:49:59
品牌:MICROCHIP
描述:Dual 150mA CMOS LDO With Select Mode⑩ Operation, Shutdown and Independent RESET Output

TC1305R-DVUN 概述

Dual 150mA CMOS LDO With Select Mode⑩ Operation, Shutdown and Independent RESET Output 双150毫安CMOS LDO,具有选择Mode⑩运行,停机和独立RESET输出 线性稳压器IC

TC1305R-DVUN 规格参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:MSOP包装说明:MSOP-10
针数:10Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.84Is Samacsys:N
最大回动电压 1:0.36 V最大回动电压 2:0.36 V
最大输入电压:6 V最小输入电压:2.7 V
JESD-30 代码:S-PDSO-G10JESD-609代码:e3
长度:3 mm湿度敏感等级:1
功能数量:1输出次数:2
端子数量:10工作温度TJ-Max:125 °C
工作温度TJ-Min:-40 °C最大输出电流 1:0.15 A
最大输出电流 2:0.15 A最大输出电压 1:2.5625 V
最小输出电压 1:2.4375 V标称输出电压 1:2.5 V
最大输出电压 2:2.87 V最小输出电压 2:2.73 V
标称输出电压 2:2.8 V封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装形状:SQUARE
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH峰值回流温度(摄氏度):260
认证状态:Not Qualified调节器类型:FIXED POSITIVE MULTIPLE OUTPUT LDO REGULATOR
座面最大高度:1.1 mm表面贴装:YES
技术:CMOS端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
宽度:3 mmBase Number Matches:1

TC1305R-DVUN 数据手册

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TC1305  
Dual 150mA CMOS LDO With Select Mode Operation,  
Shutdown and Independent RESET Output  
Features  
General Description  
• Extremely Low Supply Current for Longer Battery  
Life  
The TC1305 combines two CMOS Low Dropout Regu-  
lators and a Microprocessor Monitor in a space saving  
10-Pin MSOP package. Designed specifically for  
battery operated systems, total supply current is  
typically 120µA at full load, 20 to 60 times lower than in  
bipolar regulators.  
• Select Mode Operation: Selectable Output  
Voltages for High Design Flexibility  
• Very Low Dropout Voltage  
• 29µV  
Typical Output Noise  
RMS  
The TC1305 features selectable output voltages for  
higher design flexibility. The tri-state SELECT input pin  
• 10µsec (Typ.) Wake-Up Time from SHDN  
• 150mA Output Current per Output  
• High Output Voltage Accuracy  
allows the user to select V  
and V  
from 3  
OUT1  
OUT2  
different values (2.5V, 2.8V and 3.0V).  
An active low RESET is asserted when the detected  
voltage (V ) falls below the 2.63V reset voltage  
• Power-Saving Shutdown Mode  
• RESET Output Can Be Used as a Low Battery  
Detector or Processor Reset Generator  
DET  
threshold. The RESET output remains low for 300msec  
(typical) after V rises above reset threshold. When  
• Over Current Protection and Over Temperature  
Shutdown  
DET  
the shutdown controls (SHDN1 and SHDN2) are low,  
the regulator output voltages fall to zero, RESET output  
remains valid and supply current is reduced to 20µA  
(typ.)  
• Space Saving 10-Pin MSOP Package  
Applications  
• Load Partitioning  
Other key features for the device include ultra low noise  
operation, fast response to step changes in load and  
very low dropout voltage (typically 150mV at full load).  
The device also incorporates both over temperature  
and over current protection. Each regulator is stable  
with an output capacitor of only 1µF and has a  
maximum output current of 150mA. The TC1305 is  
featured in a 10-Pin MSOP package with selective  
output voltages.  
• Battery Operated Systems  
• Portable Computers  
• Medical Instruments  
• Instrumentation  
• Pagers and Cellular/PHS Phones  
• Linear Post-Regulator for SMPS  
Device Selection Table  
Typical Application  
Junction  
Part Number  
Package  
Temperature  
Range  
1
10  
9
V
DET  
RESET  
2
3
TC1305R-DVUN 10-Pin MSOP -40°C to +85°C  
V
V
IN  
OUT2  
3.3µF  
3.3µF  
NOTE: “R” denotes the suffix for the 2.63V VDET threshold.  
TC1305  
8
7
6
V
“D” indicates VOUT1 = VOUT2 = 2.5, 2.8, 3.0 (selectable).  
GND  
SELECT  
SHDN1  
OUT1  
Other output voltages are available. Please contact Microchip  
Technology Inc. for details.  
4
5
470pF Bypass  
(Optional)  
Package Type  
SHDN2  
10-Pin MSOP  
V
1
2
3
10  
9
RESET  
DET  
V
V
IN  
OUT2  
V
GND  
SELECT  
SHDN1  
8
OUT1  
TC1305  
4
5
7
6
Bypass  
SHDN2  
2002 Microchip Technology Inc.  
DS21526A-page 1  
TC1305  
*Stresses above those listed under "Absolute Maximum  
Ratings" may cause permanent damage to the device. These  
are stress ratings only and functional operation of the device  
at these or any other conditions above those indicated in the  
operation sections of the specifications is not implied.  
Exposure to Absolute Maximum Rating conditions for  
extended periods may affect device reliability.  
1.0  
ELECTRICAL  
CHARACTERISTICS  
ABSOLUTE MAXIMUM RATINGS*  
Input Voltage .........................................................6.5V  
Output Voltage...........................(-0.3V) to (V + 0.3V)  
IN  
Power Dissipation................Internally Limited (Note 7)  
Maximum Voltage on Any Pin ......... V +0.3V to -0.3V  
IN  
Operating Temperature Range.... -40°C < T < +125°C  
J
Storage Temperature Range ..............-55°C to +150°C  
TC1305 ELECTRICAL SPECIFICATIONS  
Electrical Characteristics: VIN = VR + 1V, IL = 100µA, CL = 3.3µF, SHDN1 > VIH, SHDN2 > VIH, TA = 25°C, unless otherwise  
noted. Boldface type specifications apply for junction temperature of -40°C to +125°C. Applies to both VOUT1 and VOUT2  
.
Symbol  
Parameter  
Min  
Typ  
Max  
Units  
Test Conditions  
VIN  
Input Operating Voltage  
2.7  
6.0  
V
mA  
V
Note 1  
IOUTMAX  
VOUT  
Maximum Output Current  
150  
Per Channel  
Output Voltage (VOUT1 and VOUT2  
VOUT Temperature Coefficient  
)
VR – 2.5% VR ± 0.5% VR + 2.5%  
Note 2  
TCVOUT  
20  
ppm/°C Note 3  
40  
VOUT/VIN Line Regulation  
VOUT/VOUT Load Regulation  
0.05  
0.5  
0.35  
2
%
%
(VR + 1V) < VIN < 6V  
IL = 0.1mA to IOUTMAX  
(Note 4)  
VIN – VOUT  
Dropout Voltage  
2
50  
100  
150  
mV  
IL = 100µA  
IL = 50mA  
IL = 100mA  
IL = 150mA  
(Note 5)  
120  
240  
360  
IIN  
Supply Current  
120  
0.05  
64  
160  
0.5  
µA  
µA  
SHDN1, SHDN2 = VIH, IL = 0  
SHDN1, SHDN2 = 0V  
FRE 120Hz  
IINSD  
PSRR  
Shutdown Supply Current  
Power Supply Rejection Ratio  
Output Short Circuit Current  
Thermal Regulation  
dB  
IOUT  
600  
0.04  
10  
mA  
V/W  
VOUT = 0V  
SC  
VOUTPD  
Notes 6, 7  
tWK  
Wake Up Time  
µsec VIN = 5V  
C
IN = 1µF, COUT = 4.7µF  
(from Shutdown Mode)  
Settling Time  
IL = 30mA, (See Figure 4-1)  
ts  
40  
µsec VIN = 5V  
IN = 1µF, COUT = 4.7µF  
IL = 30mA, (See Figure 4-1)  
C
(from Shutdown Mode)  
Note 1: The minimum VIN has to meet two conditions: VIN 2.7 and VIN VR + VDROPOUT  
.
2:  
3:  
VR is the regulator output voltage setting. For example: VR = 2.5V, 2.8V, 3.0V.  
TC VOUT = (VOUTMAX – VOUTMIN) x 106  
VOUT x T  
4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range from  
0.1mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation  
specification.  
5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value measured at a 1V  
differential.  
6: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or  
line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10 msec.  
7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the  
thermal resistance from junction-to-air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate  
thermal shutdown. Please see Section 5.0 Thermal Considerations section of this data sheet for more details.  
DS21526A-page 2  
2002 Microchip Technology Inc.  
TC1305  
TC1305 ELECTRICAL SPECIFICATIONS (CONTINUED)  
Electrical Characteristics: VIN = VR + 1V, IL = 100µA, CL = 3.3µF, SHDN1 > VIH, SHDN2 > VIH, TA = 25°C, unless otherwise noted.  
Boldface type specifications apply for junction temperature of -40°C to +125°C. Applies to both VOUT1 and VOUT2  
.
Symbol  
Parameter  
Min  
Typ  
Max  
Units  
Test Conditions  
TSD  
Thermal Shutdown Die  
Temperature  
160  
°C  
TSD  
Thermal Shutdown Hysteresis  
Output Noise  
15  
°C  
eN  
200  
nVHz IL = 100µA, F = 1kHz,  
C
C
OUT1 = COUT2 = 4.7µF,  
BYPASS = 0.01µF  
29  
µVRMS F = 10Hz to 100kHz  
SHDN Input  
VIH  
SHDN Input High Threshold  
SHDN Input Low Threshold  
65  
%VIN VIN = 2.7V to 6.0V  
%VIN VIN = 2.7V to 6.0V  
VIL  
15  
SELECT Input  
VSELH  
SELECT Input HIgh Threshold  
SELECT Input Low Threshold  
VIN – 0.2  
V
V
VIN = 2.7V to 6.0V  
VIN = 2.7V to 6.0V  
VSELL  
0.2  
RESET Output  
VDET VDET Voltage Range  
1.0  
1.2  
6.0  
6.0  
V
V
TA = 0°C to +70°C  
TA = -40°C to +125°C  
VTH  
Reset Threshold  
2.59  
2.55  
2.63  
2.66  
2.70  
TA = +25°C  
TA = -40°C to +125°C  
IVDET  
Reset Circuit Supply Current  
Reset Threshold Tempco  
VDET to Reset Delay  
20  
30  
40  
µA  
RESET = Open  
ppm/°C  
100  
300  
µsec VDET = VTH to (VTH – 100mV)  
Reset Active Time-out Period  
RESET Output Voltage Low  
140  
560  
msec  
VOL  
0.3  
0.4  
0.3  
V
V
V
V
DET = VTHMIN, ISINK = 1.2mA  
DET = VTHMIN, ISINK = 3.2mA  
DET > 1.0V, ISINK = 50µA  
VOH  
RESET Output Voltage High  
0.8 VDET  
VDET – 1.5  
V
VDET > VTHMAX, ISOURCE = 500µA  
VDET > VTHMAX, ISOURCE = 800µA  
Note 1: The minimum VIN has to meet two conditions: VIN 2.7 and VIN VR + VDROPOUT  
.
2:  
3:  
VR is the regulator output voltage setting. For example: VR = 2.5V, 2.8V, 3.0V.  
TC VOUT = (VOUTMAX – VOUTMIN) x 106  
VOUT x T  
4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range from  
0.1mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation  
specification.  
5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value measured at a 1V  
differential.  
6: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or  
line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10 msec.  
7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the  
thermal resistance from junction-to-air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate  
thermal shutdown. Please see Section 5.0 Thermal Considerations section of this data sheet for more details.  
2002 Microchip Technology Inc.  
DS21526A-page 3  
TC1305  
2.0  
PIN DESCRIPTIONS  
The descriptions of the pins are listed in Table 2-1.  
TABLE 2-1:  
PIN FUNCTION TABLE  
Pin No.  
(10-Pin MSOP)  
Symbol  
Description  
1
2
3
4
VDET  
VIN  
Detected input voltage. VDET and VIN can be connected together.  
Power supply input.  
Ground terminal.  
GND  
SELECT  
Tri-state input for setting VOUT1 and VOUT2. SELECT = GND for VOUT1 = VOUT2 = 2.5V,  
SELECT = VIN for VOUT1 = VOUT2 = 3.0V and SELECT = No connect for VOUT1 = VOUT2 = 2.8V.  
5
6
SHDN1  
SHDN2  
Shutdown control input for VOUT1. Regulator 1 is fully enabled when a logic high is applied to  
this input. Regulator 1 enters shutdown when a logic low is applied to this input. During  
shutdown, regulator output voltage falls to zero, RESET output remains valid.  
Shutdown control input for VOUT2. Regulator 2 is fully enabled when a logic high is applied to  
this input. Regulator 2 enters shutdown when a logic low is applied to this input. During  
shutdown, regulator output voltage falls to zero, RESET output remains valid.  
7
8
Bypass  
VOUT1  
VOUT2  
RESET  
Reference bypass input. Connecting a 0.01µF to this input further reduces output noise.  
Regulated voltage output 1.  
9
Regulated voltage output 2.  
10  
RESET Output. RESET = Low when VDET is below the Reset Threshold Voltage.  
RESET = High when VDET is above the Reset Threshold Voltage.  
DS21526A-page 4  
2002 Microchip Technology Inc.  
TC1305  
3.0  
DETAILED DESCRIPTION  
4.0  
4.1  
TYPICAL APPLICATIONS  
The TC1305 is a precision fixed output voltage  
regulator that contains two fully independent 150mA  
regulator outputs. The device features separate  
shutdown modes for low-power operation, and a  
common bypass pin that can be used to further reduce  
output noise. The Select Mode operation allows the  
user to select V  
values (2.5V, 2.8V, 3.0V), therefore providing high  
design flexibility. The CMOS construction of the  
TC1305 results to a very low supply current, which  
Input and Output Capacitor  
The TC1305 is stable with a wide range of capacitor  
values and types. A capacitor with a minimum value of  
1µF from V  
to Ground is required. The output  
OUT  
capacitor should have an effective series resistance  
(ESR) of 0.1to 10for a 1µF capacitor and 0.01to  
10for a 10µF capacitor. A 1µF capacitor should be  
and V  
from three different  
OUT1  
OUT2  
connected from the V to GND if there is more than 10  
IN  
inches of wire between the regulator and the AC filter  
capacitor, or if a battery is used as the power source.  
Aluminum electrolytic or tantalum capacitor types can  
be used. (Since many aluminum electrolytic capacitors  
freeze at approximately -30°C, solid tantalums are  
recommended for applications operating below -20°C).  
When operating from sources other than batteries,  
supply-noise rejection and transient response can be  
improved by increasing the value of the input and  
output capacitors and employing passive filtering  
techniques.  
does not increase with load changes. In addition, V  
remains stable and within regulation at no load  
currents.  
OUT  
The TC1305 also features an integrated microproces-  
sor supervisor that monitors power-up, power-down,  
and brown-out conditions. The active low RESET  
signal is asserted when the detected voltage V  
below the reset voltage threshold (2.63V). The RESET  
output remains low for 300msec (typical) after V  
rises above the reset threshold. The RESET output of  
the TC1305 is ensured valid down to V = 1V and is  
optimized to reject fast transient glitches on the  
monitored power supply line.  
falls  
DET  
DET  
DET  
4.2  
Bypass Capacitor  
A 0.01µF capacitor connected from the bypass input to  
ground reduces noise present on the internal  
reference, which in turn significantly reduces output  
noise. If output noise is not a concern, this input may be  
left unconnected.  
Larger capacitor values may be used, but result in a  
longer time period to rated output voltage when power  
is initially applied.  
4.3  
Shutdown Mode  
Applying a logic high to each of the shutdown pins turns  
on the corresponding output. Each regulator enters  
shutdown mode when a logic low is applied in the  
corresponding input. During shutdown mode, the out-  
put voltage falls to zero, and regulator supply current is  
reduced to 0.5µA (max). If shutdown mode is not  
necessary, the pins should be connected to V  
.
IN  
2002 Microchip Technology Inc.  
DS21526A-page 5  
TC1305  
4.4  
Select ModeOperation  
4.6  
Turn On Response  
The Select Mode operation is a tri-state input that  
allows the user to select V and V from three  
The turn on response is defined as two separate  
response categories, Wake Up Time (t ) and Settling  
OUT1  
OUT2  
WK  
different values. By connecting the SELECT pin to  
GND, both output voltages (V , V ) supply  
Time (t ).  
S
OUT1  
OUT2  
The TC1305 has a fast Wake Up Time (10µsec typical)  
when released from shutdown. See Figure 4-1 for the  
2.5V. Connecting the SELECT pin to V results in both  
IN  
output channels supplying a fixed 3.0V output. Last but  
not least, leaving the SELECT pin floating sets both  
voltages to 2.8V. This output voltage functionality  
provides high design flexibility and minimizes costs  
associated with inventory, time-to-market and new  
device qualifications.  
Wake Up Time designated as t . The Wake Up Time  
is defined as the time it takes for the output to rise to 2%  
WK  
of the V  
value after being released from shutdown.  
OUT  
The total turn on response is defined as the Settling  
Time (t ), see Figure 4-1. Settling Time (inclusive with  
S
t
) is defined as the condition when the output is  
WK  
within 2% of its fully enabled value (40µsec typical)  
when released from shutdown. The settling time of the  
output voltage is dependent on load conditions and  
4.5  
RESET Output  
The microprocessor supervisor of theTC1305 provides  
accurate supply voltage monitoring and reset timing  
during power-up, power-down and brown-out condi-  
output capacitance on V  
(RC response).  
OUT  
tions. The RESET output is valid to V  
= 1.0V (below  
DET  
FIGURE 4-1:  
WAKE-UP RESPONSE  
TIME  
this point it becomes an open circuit and does not sink  
current) and is able to reject negative going transients  
(glitches) on the power supply line. Transient immunity  
can further be improved by adding a capacitor close to  
V
IH  
V
t
IL  
S
the V  
pin of the TC1305.  
SHDN  
DET  
98%  
2%  
V
OUT  
t
WK  
DS21526A-page 6  
2002 Microchip Technology Inc.  
TC1305  
Equation 5-1 can be used in conjunction with  
Equation 5-2 to ensure regulator thermal operation is  
within limits. For example:  
5.0  
5.1  
THERMAL CONSIDERATIONS  
Thermal Shutdown  
Given:  
Integrated thermal protection circuitry shuts the  
regulator off when die exceeds approximately 160°C.  
The regulator remains off until the die temperature  
drops to approximately 145°C.  
V
= 3.8V ± 5%  
INMAX  
V
= 3.0V ± 2.5%  
= 3.0V ± 2.5%  
OUT1MIN  
V
OUT2MIN  
Thermal shutdown is intended to protect the device  
under transient accidental (fault) overload conditions.  
Thermal Shutdown may not protect the LDO while  
operating above junction temperatures of 125°C  
continuously. Sufficient thermal evaluation of the  
design needs to be conducted to ensure that the  
junction temperature does not exceed 125°C.  
I
LOAD1MAX = 120mA  
LOAD2MAX = 120mA  
I
T
= 125°C  
= 55°C  
JMAX  
T
AMAX  
JA  
θ
= 113°C/W  
Find: 1. Actual power dissipation  
2. Maximum allowable dissipation  
5.2  
Power Dissipation  
Actual power dissipation:  
The amount of power the regulator dissipates is  
primarily a function of input and output voltage, and  
output current. The following equation is used to  
calculate worst case actual power dissipation.  
P
[(VINMAX – VOUT1MIN)] x I  
D
LOAD1MAX  
+ [(VINMAX – VOUT2MIN)] x I  
LOAD2MAX  
-3  
-3  
[(3.8 x 1.05) – (3.0 x .975)] x 120 x 10  
+ [(3.8 x 1.05) – (3.0 x .975)] x 120 x 10  
= 256mW  
EQUATION 5-1:  
P
(VINMAX – VOUT1MIN)I  
+
D
LOAD1MAX  
LOAD2MAX  
(VINMAX – VOUT2MIN)I  
Maximum allowable power dissipation:  
P
= (TJMAX – T  
)
Where:  
D
AMAX  
θ
JA  
P
= Worst case actual power dissipation  
D
= (125 – 55)  
113  
V
= Maximum voltage on V  
= Minimum regulator output voltage1  
= Maximum output (load) current1  
INMAX  
IN  
V
OUT1MIN  
I
= 620mW  
V
LOAD1MAX = Minimum regulator output voltage2  
OUT2MIN  
In this example, the TC1305 dissipates a maximum of  
256mW; below the allowable limit of 620mW. In a  
similar manner, Equation 5-1 and Equation 5-2 can be  
used to calculate maximum current and/or input  
voltage limits. For example, the maximum allowable  
I
= Maximum output (load) current2  
LOAD2MAX  
The  
maximum  
allowable  
power  
dissipation  
(Equation 5-2) is a function of the maximum ambient  
temperature (TAMAX), the maximum allowable die  
temperature (125°C), and the thermal resistance from  
junction-to-air (θ ). The MSOP-10 package has a θ  
of approximately 113°C/W when mounted on a four  
layer FR4 dielectric copper clad PC board.  
V
is found by substituting the maximum allowable  
IN  
power dissipation of 620mW into Equation 5-1, from  
which VINMAX = 5.6V.  
JA  
JA  
5.3  
Layout Considerations  
EQUATION 5-2:  
The primary path of heat conduction out of the package  
is via the package leads. Therefore, layouts having a  
ground plane, wide traces at the pads, and wide power  
P
DMAX = (TJMAX – T  
)
AMAX  
θ
JA  
supply bus lines combine to lower θ and therefore  
JA  
Where all terms are previously defined.  
increase the maximum allowable power dissipation  
limit.  
2002 Microchip Technology Inc.  
DS21526A-page 7  
TC1305  
6.0  
TYPICAL CHARACTERISTICS  
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of  
samples and are provided for informational purposes only. The performance characteristics listed herein are  
not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified  
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.  
Dropout Voltage1 vs. Load Current  
Dropout Voltage2 vs. Load Current  
(SELECT = V  
Dropout Voltage1 vs. Load Current  
(SELECT = NC)  
(SELECT = V  
)
)
DD  
DD  
0.25  
0.20  
0.15  
0.18  
0.16  
0.14  
0.12  
0.10  
0.08  
0.06  
0.04  
0.02  
0.00  
0.18  
0.16  
0.14  
0.12  
0.10  
0.08  
0.06  
0.04  
0.02  
0.00  
130°C  
130°C  
130°C  
25°C  
25°C  
25°C  
0.10  
0.05  
0.00  
-45°C  
-45°C  
-45°C  
0
25  
50  
75  
100 125 150  
0
25  
50  
75  
100 125 150  
0
25  
50  
75  
100 125 150  
LOAD CURRENT (mA)  
LOAD CURRENT (mA)  
LOAD CURRENT (mA)  
Dropout Voltage2 vs. Load Current  
Load Regulation  
vs. Temperature  
I
vs. V  
DD DD  
(SELECT = V  
)
(SELECT = GND)  
DD  
0.25  
0.20  
0.15  
0.600  
0.500  
150  
140  
120  
100  
80  
130°C  
-45°C  
0.400  
0.300  
0.200  
I
= 0.1 to 150mA  
L
25°C  
25°C  
130°C  
-45°C  
0.10  
0.05  
0.00  
60  
40  
20  
0
0.100  
0.000  
0
25  
50  
75  
100 125 150  
-45 -20  
5
30 55 80 105 130  
3
3.5  
4
4.5  
(V)  
5
5.5  
6
V
LOAD CURRENT (mA)  
DD  
TEMPERATURE (°C)  
I
vs. Temperature  
Reset Active Time vs.  
V
Trip Point vs.  
DD  
(SELECT = NC)  
CC  
Temperature (°C)  
Temperature (°C)  
2.70  
140  
130  
400  
350  
300  
250  
2.68  
2.66  
2.64  
2.62  
2.60  
2.58  
2.56  
2.54  
2.52  
2.50  
120  
110  
100  
V
= 6.0V  
= 3.0V  
DD  
200  
150  
V
DD  
100  
50  
90  
80  
0
-40 -20  
5
30 55  
80 105 125  
-40 -20  
5
30 55 80 105 125  
-40 -20  
5
30 55 80 105 125  
TEMPERATURE (°C)  
TEMPERATURE (°C)  
TEMPERATURE (°C)  
DS21526A-page 8  
2002 Microchip Technology Inc.  
TC1305  
6.0  
TYPICAL CHARACTERISTICS (CONTINUED)  
V
vs. Temperature  
V
vs. Temperature  
V vs. Temperature  
OUT1  
OUT1  
(SELECT = V  
OUT2  
(SELECT = V  
)
)
(SELECT = NC)  
DD  
DD  
3.00  
2.99  
2.98  
2.97  
2.96  
2.95  
2.94  
2.93  
2.92  
2.81  
3.01  
3.00  
2.99  
2.98  
2.97  
2.96  
2.95  
2.94  
2.93  
2.92  
V
= 6.0V & I = 100µA  
DD  
L
V
= 6.0V & I = 100µA  
L
DD  
2.80  
2.79  
2.78  
2.77  
2.76  
2.75  
V
= 3.8V & I = 100mA  
L
V
= 4.0V & I = 100µA  
L
DD  
V
= 3.8V & I = 150mA  
L
DD  
DD  
V
= 3.8V & I = 100mA  
V
= 3.8V & I = 150mA  
L
DD  
L
DD  
V
= 6.0V & I = 100µA  
L
DD  
V
= 4.0V & I = 100µA  
L
DD  
2.74  
2.73  
-45 -20  
5
30 55  
80 105 130  
-45 -20  
5
30 55  
80 105 130  
-45 -20  
5
30 55  
80 105 130  
TEMPERATURE (°C)  
TEMPERATURE (°C)  
TEMPERATURE (°C)  
V vs. Temperature  
OUT2  
(SELECT = NC)  
V
vs. Temperature  
OUT1  
(SELECT = GND)  
V
vs. Temperature  
OUT2  
(SELECT = GND)  
2.81  
2.80  
2.79  
2.78  
2.77  
2.76  
2.75  
2.74  
2.73  
2.51  
2.50  
2.49  
2.48  
2.47  
2.46  
2.45  
2.44  
2.43  
2.51  
2.50  
2.49  
2.48  
2.47  
2.46  
2.45  
2.44  
2.43  
V
= 6.0V & I = 100µA  
L
DD  
V
= 6.0V & I = 100µA  
L
DD  
V
= 3.5V & I = 100µA  
V
= 3.5V & I = 100µA  
L
DD  
L
DD  
V
= 6.0V & I = 100µA  
L
DD  
= 3.8V & I = 150mA  
V
= 3.5V & I = 150mA  
V
= 3.5V & I = 150mA  
DD  
L
DD  
L
V
DD  
L
V
= 6.0V & I = 100µA  
L
DD  
-45 -20  
5
30 55  
80 105  
130  
-45 -20  
5
30 55  
80 105  
130  
-45 -20  
5
30 55  
80 105  
130  
TEMPERATURE (°C)  
TEMPERATURE (°C)  
TEMPERATURE (°C)  
2002 Microchip Technology Inc.  
DS21526A-page 9  
TC1305  
6.0  
TYPICAL CHARACTERISTICS (CONTINUED)  
Power Supply Rejection Ratio vs. Frequency  
Power Supply Rejection Ratio vs. Frequency  
0
-20  
0
I
C
C
= 150mA  
OUT  
V
V
V
= 4V  
= 100mV  
INDC  
INAC  
I
= 150mA  
OUT  
OUT  
V
V
V
= 4V  
INDC  
INAC  
= 10µF Tantalum  
OUT  
C
= 10µF Tantalum  
P-P  
= 100mV  
P-P  
= 0.01µF Ceramic  
BYPASS  
= 3V  
OUTDC  
= 3V  
OUTDC  
-20  
-40  
-40  
-60  
-60  
-80  
-80  
-100  
-100  
10  
100  
1k  
10k  
100k  
1M  
10  
100  
1k  
10k  
100k  
1M  
f (Hz)  
f (Hz)  
Line Transient Response  
Output Noise  
10  
1
V
OUT2  
V
OUT1  
0.1  
6V  
4V  
C
C
= C  
= 4.7µF,  
OUT2  
OUT1  
= 0.01µF, I  
= 100µA,  
0.01  
BYPASS  
LOAD  
= 3.0V  
OUT2  
C
C
C
= 10µF Ceramic  
OUT  
IN  
BYP  
LOAD  
V
IN  
= 4.0V, V  
= V  
OUT1  
= 0  
= 0.01µF  
= 100µA  
= 3V  
I
0.001  
0.01  
V
OUT  
0.1  
1
10  
100  
1000  
Frequency (kHz)  
Time (2µs / div)  
Load Transient Response  
150mA  
100µA  
V
V
C
C
= 4V  
IN  
OUT  
= 3V  
= 10µF Ceramic  
OUT  
BYP  
= 0.01µF  
Time (100ms / div)  
DS21526A-page 10  
2002 Microchip Technology Inc.  
TC1305  
6.0  
TYPICAL CHARACTERISTICS (CONTINUED)  
Line Transient Response  
Line Transient Response  
V
V
OUT2  
OUT2  
V
V
V
OUT1  
OUT1  
V
4.6V  
IN  
IN  
4.6V  
3.6V  
3.6V  
C
OUT1  
R
LOAD  
= C  
OUT2  
= 30kΩ  
= 10µF Ceramic  
C
OUT1  
R
LOAD  
= C  
OUT2  
= 30kΩ  
= 1µF Tantalum  
Load Transient Response  
Load Transient Response  
V
V
OUT2  
V
V
OUT2  
OUT1  
OUT1  
C
= C  
OUT2  
= 1µF Tantalum  
C
=
C
= 10µF Ceramic  
OUT1  
OUT1  
OUT2  
100mA  
100mA  
V
= 5.5V  
V
= 5.5V  
IN  
IN  
R
R
= 30kΩ  
R
R
= 30kΩ  
= 30kΩ  
LOAD  
L
LOAD  
L
= 30kΩ  
100µA  
100µA  
Load Transient Response  
Load Transient Response  
V
V
V
V
OUT2  
OUT2  
OUT1  
OUT1  
C
=
C
= 1µF Tantalum  
OUT1  
OUT2  
C
=
C
= 10µF Ceramic  
OUT1  
OUT2  
100mA  
100mA  
V
= 5.5V  
IN  
V
R
R
= 5.5V  
IN  
R
R
= 30kΩ  
LOAD  
L
= 30kΩ  
LOAD  
= 30kΩ  
= 30kΩ  
L
100µA  
100µA  
2002 Microchip Technology Inc.  
DS21526A-page 11  
TC1305  
6.0  
TYPICAL CHARACTERISTICS (CONTINUED)  
Thermal Shutdown Response  
Thermal Shutdown Response  
V
OUT  
V
OUT  
V
V
C
C
C
= 6.0V  
V
V
C
C
C
= 6.0V  
IN  
OUT  
IN  
IN  
OUT  
IN  
= 2.8V  
= 2.5V  
= 1µF  
= 1µF  
= 1µF  
= 1µF  
OUT  
OUT  
= 470pF  
BYPASS  
= 470pF  
BYPASS  
Time (500ms / div)  
Time (500ms / div)  
Shutdown Response  
3.0V  
Thermal Shutdown Response  
V
OUT  
V
OUT2  
3.0V  
V
OUT1  
V
= 6.0V  
IN  
V
= 3.0V  
OUT  
C
C
C
= 1µF  
IN  
= 1µF  
OUT  
/Shdn1 = /Shdn2  
= 470pF  
BYPASS  
C
= C  
OUT2  
= 1µF Tantalum  
OUT1  
= 5.5V  
V
IN  
R
= 30kΩ  
LOAD  
Time (500ms / div)  
Time (10ms / div)  
DS21526A-page 12  
2002 Microchip Technology Inc.  
TC1305  
7.0  
7.1  
PACKAGING INFORMATION  
Package Marking Information  
Package marking data not available at this time.  
7.2  
Taping Form  
Component Taping Orientation for 10-Pin MSOP Devices  
User Direction of Feed  
PIN 1  
W
P
Standard Reel Component Orientation  
for TR Suffix Device  
Carrier Tape, Number of Components Per Reel and Reel Size  
Package  
Carrier Width (W)  
Pitch (P)  
Part Per Full Reel  
Reel Size  
10-Pin MSOP  
12 mm  
8 mm  
2500  
13 in  
7.3  
Package Dimensions  
10-Pin MSOP  
PIN 1  
.122 (3.10)  
.114 (2.90)  
.201 (5.10)  
.183 (4.65)  
.012 (0.30)  
.006 (0.15)  
.122 (3.10)  
.114 (2.90)  
.043 (1.10)  
MAX.  
.009 (0.23)  
.005 (0.13)  
6° MAX.  
.006 (0.15)  
.002 (0.05)  
.028 (0.70)  
.016 (0.40)  
.020 (0.50)  
Dimensions: inches (mm)  
2002 Microchip Technology Inc.  
DS21526A-page 13  
TC1305  
NOTES:  
DS21526A-page 14  
2002 Microchip Technology Inc.  
TC1305  
Sales and Support  
Data Sheets  
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recom-  
mended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:  
1. Your local Microchip sales office  
2. The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277  
3. The Microchip Worldwide Site (www.microchip.com)  
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.  
New Customer Notification System  
Register on our web site (www.microchip.com/cn) to receive the most current information on our products.  
2002 Microchip Technology Inc.  
DS21526A-page15  
TC1305  
NOTES:  
DS21526A-page16  
2002 Microchip Technology Inc.  
TC1305  
Information contained in this publication regarding device  
applications and the like is intended through suggestion only  
and may be superseded by updates. It is your responsibility to  
ensure that your application meets with your specifications.  
No representation or warranty is given and no liability is  
assumed by Microchip Technology Incorporated with respect  
to the accuracy or use of such information, or infringement of  
patents or other intellectual property rights arising from such  
use or otherwise. Use of Microchip’s products as critical com-  
ponents in life support systems is not authorized except with  
express written approval by Microchip. No licenses are con-  
veyed, implicitly or otherwise, under any intellectual property  
rights.  
Trademarks  
The Microchip name and logo, the Microchip logo, FilterLab,  
KEELOQ, microID, MPLAB, PIC, PICmicro, PICMASTER,  
PICSTART, PRO MATE, SEEVAL and The Embedded Control  
Solutions Company are registered trademarks of Microchip Tech-  
nology Incorporated in the U.S.A. and other countries.  
dsPIC, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB,  
In-Circuit Serial Programming, ICSP, ICEPIC, microPort,  
Migratable Memory, MPASM, MPLIB, MPLINK, MPSIM,  
MXDEV, PICC, PICDEM, PICDEM.net, rfPIC, Select Mode  
and Total Endurance are trademarks of Microchip Technology  
Incorporated in the U.S.A.  
Serialized Quick Turn Programming (SQTP) is a service mark  
of Microchip Technology Incorporated in the U.S.A.  
All other trademarks mentioned herein are property of their  
respective companies.  
© 2002, Microchip Technology Incorporated, Printed in the  
U.S.A., All Rights Reserved.  
Printed on recycled paper.  
Microchip received QS-9000 quality system  
certification for its worldwide headquarters,  
design and wafer fabrication facilities in  
Chandler and Tempe, Arizona in July 1999  
and Mountain View, California in March 2002.  
The Company’s quality system processes and  
procedures are QS-9000 compliant for its  
PICmicro® 8-bit MCUs, KEELOQ® code hopping  
devices, Serial EEPROMs, microperipherals,  
non-volatile memory and analog products. In  
addition, Microchip’s quality system for the  
design and manufacture of development  
systems is ISO 9001 certified.  
2002 Microchip Technology Inc.  
DS21526A-page 17  
WORLDWIDE SALES AND SERVICE  
Japan  
AMERICAS  
ASIA/PACIFIC  
Microchip Technology Japan K.K.  
Benex S-1 6F  
3-18-20, Shinyokohama  
Kohoku-Ku, Yokohama-shi  
Kanagawa, 222-0033, Japan  
Tel: 81-45-471- 6166 Fax: 81-45-471-6122  
Corporate Office  
Australia  
2355 West Chandler Blvd.  
Microchip Technology Australia Pty Ltd  
Suite 22, 41 Rawson Street  
Epping 2121, NSW  
Chandler, AZ 85224-6199  
Tel: 480-792-7200 Fax: 480-792-7277  
Technical Support: 480-792-7627  
Web Address: http://www.microchip.com  
Australia  
Tel: 61-2-9868-6733 Fax: 61-2-9868-6755  
Korea  
Rocky Mountain  
China - Beijing  
Microchip Technology Korea  
168-1, Youngbo Bldg. 3 Floor  
Samsung-Dong, Kangnam-Ku  
Seoul, Korea 135-882  
2355 West Chandler Blvd.  
Chandler, AZ 85224-6199  
Tel: 480-792-7966 Fax: 480-792-7456  
Microchip Technology Consulting (Shanghai)  
Co., Ltd., Beijing Liaison Office  
Unit 915  
Bei Hai Wan Tai Bldg.  
Atlanta  
500 Sugar Mill Road, Suite 200B  
Atlanta, GA 30350  
Tel: 770-640-0034 Fax: 770-640-0307  
Boston  
2 Lan Drive, Suite 120  
Westford, MA 01886  
Tel: 978-692-3848 Fax: 978-692-3821  
Tel: 82-2-554-7200 Fax: 82-2-558-5934  
Singapore  
Microchip Technology Singapore Pte Ltd.  
200 Middle Road  
#07-02 Prime Centre  
No. 6 Chaoyangmen Beidajie  
Beijing, 100027, No. China  
Tel: 86-10-85282100 Fax: 86-10-85282104  
China - Chengdu  
Microchip Technology Consulting (Shanghai)  
Co., Ltd., Chengdu Liaison Office  
Rm. 2401, 24th Floor,  
Ming Xing Financial Tower  
No. 88 TIDU Street  
Singapore, 188980  
Tel: 65-6334-8870 Fax: 65-6334-8850  
Taiwan  
Microchip Technology Taiwan  
11F-3, No. 207  
Tung Hua North Road  
Taipei, 105, Taiwan  
Tel: 886-2-2717-7175 Fax: 886-2-2545-0139  
Chicago  
333 Pierce Road, Suite 180  
Itasca, IL 60143  
Chengdu 610016, China  
Tel: 86-28-6766200 Fax: 86-28-6766599  
Tel: 630-285-0071 Fax: 630-285-0075  
China - Fuzhou  
Dallas  
Microchip Technology Consulting (Shanghai)  
Co., Ltd., Fuzhou Liaison Office  
Unit 28F, World Trade Plaza  
No. 71 Wusi Road  
Fuzhou 350001, China  
4570 Westgrove Drive, Suite 160  
Addison, TX 75001  
EUROPE  
Denmark  
Microchip Technology Nordic ApS  
Regus Business Centre  
Lautrup hoj 1-3  
Ballerup DK-2750 Denmark  
Tel: 45 4420 9895 Fax: 45 4420 9910  
Tel: 972-818-7423 Fax: 972-818-2924  
Detroit  
Tri-Atria Office Building  
32255 Northwestern Highway, Suite 190  
Farmington Hills, MI 48334  
Tel: 248-538-2250 Fax: 248-538-2260  
Tel: 86-591-7503506 Fax: 86-591-7503521  
China - Shanghai  
Microchip Technology Consulting (Shanghai)  
Co., Ltd.  
Room 701, Bldg. B  
Far East International Plaza  
No. 317 Xian Xia Road  
Shanghai, 200051  
Tel: 86-21-6275-5700 Fax: 86-21-6275-5060  
Kokomo  
France  
2767 S. Albright Road  
Kokomo, Indiana 46902  
Tel: 765-864-8360 Fax: 765-864-8387  
Los Angeles  
Microchip Technology SARL  
Parc d’Activite du Moulin de Massy  
43 Rue du Saule Trapu  
Batiment A - ler Etage  
91300 Massy, France  
Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79  
Germany  
Microchip Technology GmbH  
Gustav-Heinemann Ring 125  
D-81739 Munich, Germany  
Tel: 49-89-627-144 0 Fax: 49-89-627-144-44  
18201 Von Karman, Suite 1090  
Irvine, CA 92612  
Tel: 949-263-1888 Fax: 949-263-1338  
China - Shenzhen  
Microchip Technology Consulting (Shanghai)  
Co., Ltd., Shenzhen Liaison Office  
Rm. 1315, 13/F, Shenzhen Kerry Centre,  
Renminnan Lu  
Shenzhen 518001, China  
Tel: 86-755-2350361 Fax: 86-755-2366086  
New York  
150 Motor Parkway, Suite 202  
Hauppauge, NY 11788  
Tel: 631-273-5305 Fax: 631-273-5335  
San Jose  
Microchip Technology Inc.  
2107 North First Street, Suite 590  
San Jose, CA 95131  
Tel: 408-436-7950 Fax: 408-436-7955  
Toronto  
Hong Kong  
Italy  
Microchip Technology Hongkong Ltd.  
Unit 901-6, Tower 2, Metroplaza  
223 Hing Fong Road  
Kwai Fong, N.T., Hong Kong  
Tel: 852-2401-1200 Fax: 852-2401-3431  
Microchip Technology SRL  
Centro Direzionale Colleoni  
Palazzo Taurus 1 V. Le Colleoni 1  
20041 Agrate Brianza  
Milan, Italy  
6285 Northam Drive, Suite 108  
Mississauga, Ontario L4V 1X5, Canada  
Tel: 905-673-0699 Fax: 905-673-6509  
India  
Tel: 39-039-65791-1 Fax: 39-039-6899883  
United Kingdom  
Arizona Microchip Technology Ltd.  
505 Eskdale Road  
Winnersh Triangle  
Wokingham  
Berkshire, England RG41 5TU  
Tel: 44 118 921 5869 Fax: 44-118 921-5820  
Microchip Technology Inc.  
India Liaison Office  
Divyasree Chambers  
1 Floor, Wing A (A3/A4)  
No. 11, O’Shaugnessey Road  
Bangalore, 560 025, India  
Tel: 91-80-2290061 Fax: 91-80-2290062  
03/01/02  
DS21526A-page 18  
2002 Microchip Technology Inc.  

TC1305R-DVUN CAD模型

  • 引脚图

  • 封装焊盘图

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