MCP87022TUMF [MICROCHIP]
High-Speed N-Channel Power MOSFET;
| 型号： | MCP87022TUMF |
| 厂家： | 
MICROCHIP |
| 描述： | High-Speed N-Channel Power MOSFET |
| 文件： | 总16页 (文件大小：679K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MCP87022
High-Speed N-Channel Power MOSFET
Features:
Description
• Low Drain-to-Source On Resistance (RDS(ON)
)
The MCP87022 is an N-Channel power MOSFET in a
popular PDFN 5 mm x 6 mm package. Advanced
packaging and silicon processing technologies allow
the MCP87022 to achieve a low QG for a given RDS(on)
value, resulting in a low Figure of Merit (FOM).
Combined with low RG, the low Figure of Merit of the
MCP87022 allows high efficiency power conversion
with reduced switching and conduction losses.
• Low Total Gate Charge (QG) and Gate-to-Drain
Charge (QGD
)
• Low Series Gate Resistance (RG)
• Fast Switching
• Capable of Short Dead-Time Operation
• ROHS Compliant
Applications
• Point-of-Load DC-DC Converters
• High Efficiency Power Management in Servers,
Networking and Automotive Applications
Package Type
PDFN 5 x 6
8
7
6
5
S 1
D
D
D
D
2
3
4
S
S
G
Product Summary Table: Unless otherwise indicated, T = +25˚C
A
Parameters
Operating Characteristics
Sym
Min Typ Max Units
Conditions
Drain-to-Source Breakdown Voltage
BV
25
1
—
—
V
V
V
= 0V, I = 250 µA
D
DSS
GS
DS
Gate-to-Source Threshold Voltage
Drain-to-Source On Resistance
V
R
1.3
1.6
V
= V , I = 250 µA
GS D
GS(TH)
DS(ON)
—
—
—
2.2
1.9
2.6
2.3
29
mΩ
mΩ
nC
V
V
V
= 4.5V, I = 25A
D
GS
GS
DS
= 10V, I = 25A
D
Total Gate Charge
Q
25.5
= 12.5V, I = 25A, V = 4.5V
D GS
G
Gate-to-Drain Charge
Series Gate Resistance
Q
—
—
9
—
—
nC
V
= 12.5V, I = 25A
GD
DS D
R
1.3
Ω
—
G
Thermal Characteristics
Thermal Resistance Junction-to-X
R
—
—
—
—
56
˚C/W Note 1
˚C/W Note 2
θJX
Thermal Resistance Junction-to-Case
R
1.6
θJC
Note 1: RθJX is determined with the device surface mounted on a 4-Layer FR4 PCB, with a 1” x 1” mounting pad of
2 oz. copper. This characteristic is dependent on user’s board design.
2: RθJC is determined using JEDEC 51-14 Method. This characteristic is determined by design.
2012 Microchip Technology Inc.
DS25133B-page 1
MCP87022
†
Notice:
Stresses above those listed under
1.0
ELECTRICAL
CHARACTERISTICS
“Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only and functional
operation of the device at those or any other conditions
above those indicated in the operational sections of this
specification is not intended. Exposure to maximum
rating conditions for extended periods may affect
device reliability.
Absolute Maximum Ratings †
VDS.......................................................................+25V
VGS........................................................... +10.0V / -8V
ID, Continuous ....................................100A, TC = 25˚C
PD.....................................................2.2W, TA = +25˚C
TJ, TSTG.............................................. -55˚C to +150˚C
EAS Avalanche Energy..................................... 450 mJ
ID = 30A, L = 1 mH, RG = 25Ω
DC ELECTRICAL CHARACTERISTICS
Electrical Characteristics: Unless otherwise indicated, TA = +25°C
Parameters
Sym
Min
Typ
Max
Units
Conditions
Static Characteristics
Drain-to-Source
BVDSS
25
—
—
V
VGS = 0V, ID = 250 µA
Breakdown Voltage
Drain-to-Source Leakage Current
Gate-to-Source Leakage Current
IDSS
IGSS
—
—
1
—
—
1
µA
nA
V
VGS = 0V, VDS = 20V
100
1.6
2.6
2.3
—
VDS = 0V, VGS = 10V/-8V
VDS = VGS, ID = 250 µA
Gate-to-Source Threshold Voltage VGS(TH)
1.3
2.2
1.9
155
Drain-to-Source On Resistance
RDS(ON)
gfs
—
—
—
m VGS = 4.5V, ID = 25 A
m VGS = 10V, ID = 25 A
Transconductance
S
VDS = 12.5V, ID = 25A
Dynamic Characteristics
Input Capacitance
CISS
COSS
CRSS
QG
—
—
—
—
2310
1080
285
—
—
—
29
pF
pF
pF
nC
VGS = 0V, VDS = 12.5V, f = 1 MHz
VGS = 0V, VDS = 12.5V, f = 1 MHz
VGS = 0V, VDS = 12.5V, f = 1 MHz
VDS = 12.5V, ID = 25 A,
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
25.5
VGS = 4.5V
Gate-to-Drain Charge
Gate-to-Source Charge
Gate Charge at VGS(TH)
Output Charge
QGD
QGS
—
—
—
—
—
9
—
—
—
—
—
nC
nC
nC
nC
ns
VDS = 12.5V, ID = 25 A
VDS = 12.5V, ID = 25 A
VDS = 12.5V, ID = 25 A
VDS = 12.5V, VGS = 0
4.5
3.3
21
QG(TH)
QOSS
td(on)
Turn-On Delay Time
7.6
VDS = 12.5V, VGS = 4.5V,
ID = 25A, RG = 2
Rise Time
tr
td(off)
tf
—
—
—
—
27
21
17
1.3
—
—
—
—
ns
ns
ns
VDS = 12.5V, VGS = 4.5V,
ID = 25A, RG = 2
Turn-Off Delay Time
Fall Time
VDS = 12.5V, VGS = 4.5V,
ID = 25A, RG = 2
VDS = 12.5V, VGS = 4.5V,
ID = 25A, RG = 2
Series Gate Resistance
RG
DS25133B-page 2
2012 Microchip Technology Inc.
MCP87022
DC ELECTRICAL CHARACTERISTICS (CONTINUED)
Electrical Characteristics: Unless otherwise indicated, TA = +25°C
Parameters
Sym
Min
Typ
Max
Units
Conditions
Diode Characteristics
Diode Forward Voltage
Reverse Recovery Charge
Reverse Recovery Time
Avalanche Characteristics
Avalanche Energy
VFD
QRR
trr
—
—
—
0.8
39
22
1
V
IS = 25A, VGS = 0V
—
—
nC
ns
IS = 25A, di/dt = 300 A/µs
IS = 25A, di/dt = 300 A/µs
EAS
200
—
—
mJ
ID = 20A, L = 1 mH,
R
G = 25
TEMPERATURE CHARACTERISTICS
Electrical Characteristics: Unless otherwise indicated, TA = +25°C
Parameters
Temperature Ranges
Sym
Min
Typ
Max
Units
Conditions
Operating Junction Temperature Range
Storage Temperature Range
TJ
TA
-55
-55
—
—
150
150
°C
°C
Package Thermal Resistances
Thermal Resistance Junction-to-X, 8L 5x6-PDFN
RθJX
—
—
—
—
56
°C/W Note 1
°C/W Note 2
Thermal Resistance Junction-to-Case, 8L 5x6-PDFN RθJC
1.6
Note 1: RθJX is determined with the device surface mounted on a 4-Layer FR4 PCB, with a 1” x 1” mounting pad of
2 oz. copper. This characteristic is dependent on user’s board design.
2: RθJC is determined using JEDEC 51-14 Method. This characteristic is determined by design.
2012 Microchip Technology Inc.
DS25133B-page 3
MCP87022
2.0
TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, TA = +25°C.
80
1.8
1.6
1.4
1.2
1
ID = 25A
VGS = 4.5V
70
VGS = 10V
60
VGS = 4.5V
50
VGS = 3V
40
30
VGS = 2.5V
0.8
0.6
0.4
20
10
0
-60 -40 -20
0
20 40 60 80 100 120 140 160
0.0
0.2
0.4
0.6
0.8
VDS - Drain-to-Source Voltage (V)
TC - Case Temperature (°C)
FIGURE 2-1:
Typical Output
FIGURE 2-4:
Normalized On Resistance
Characteristics.
vs. Temperature.
80
10
VDS = 5V
ID = 25A
9
8
7
6
5
4
3
2
1
0
70
60
50
40
30
20
10
0
VDS = 5V
VDS = 12.5V
TC = +25°C
TC = +125°C
TC = -55°C
1
1.25 1.5 1.75
2
2.25 2.5 2.75
VGS - Gate-to-Source Voltage (V)
3
0
5
10 15 20 25 30 35 40 45 50 55
QG - Gate Charge (nC)
FIGURE 2-2:
Typical Transfer
FIGURE 2-5:
Gate-to-Source Voltage vs.
Characteristics.
Gate Charge.
4.5
10
9
f = 1 MHz
GS = 0V
ID = 25A
4
3.5
3
V
8
7
6
5
4
3
2
1
0
CISS
2.5
2
TC = +125°C
1.5
1
COSS
CRSS
TC = +25°C
8
0.5
0
0
2
4
6
10
0
5
10
15
20
VGS - Gate-to-Source Voltage (V)
V
DS - Drain-to-Source Voltage (V)
FIGURE 2-3:
Source Voltage.
On Resistance vs. Gate-to-
FIGURE 2-6:
Source Voltage.
Capacitance vs. Drain-to-
DS25133B-page 4
2012 Microchip Technology Inc.
MCP87022
Note: Unless otherwise indicated, TA = +25°C.
1.7
120
100
80
60
40
20
0
ID = 250 µA
1.5
1.3
1.1
0.9
0.7
VGS = 10V
VGS = 4.5V
-75 -50 -25
0
25 50 75 100 125 150 175
0
25
50
75
100
125
150
TC - Case Temperature (°C)
TC - Case Temperature (˚C)
FIGURE 2-7:
Gate-to-Source Threshold
FIGURE 2-10:
Maximum Drain Current vs.
Voltage vs. Temperature.
Temperature.
100
10
1
1
0.1
DC = 0.5
DC = 0.3
DC = 0.1
DC = 0.05
DC = 0.02
DC = 0.01
Single Pulse
TC = +25°C
TC = +125°C
0.1
0.01
0.01
0.001
0.001
0.001
0.0
0.2
0.4
0.6
0.8
1.0
0.1
10
1000
VSD - Source-to-Drain Voltage (V)
t1 - Pulse Duration (s)
FIGURE 2-8:
Source-to-Drain Current vs.
FIGURE 2-11:
Transient Thermal
Source-to-Drain Voltage.
Impedance.
1000
100
Operation in this range is
limited by RDS(on)
100
1 ms
10
1
TC = +25°C
10 ms
TC = +150°C
10
100 ms
1s
0.1
DC
RθJA = 56 °C/W
Single Pulse
1
0.01
0.01
0.1
1
10
100
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
tAV - Avalanche Time (ms)
FIGURE 2-9:
Maximum Safe Operating
FIGURE 2-12:
Single-Pulse Unclamped
Area.
Inductive Switching.
2012 Microchip Technology Inc.
DS25133B-page 5
MCP87022
Note: Unless otherwise indicated, TA = +25°C.
30
ID = 250 µA
29
28
27
26
25
-60 -40 -20
0
20 40 60 80 100 120 140 160
TC - Case Temperature(°C)
FIGURE 2-13:
Drain-to-Source Breakdown
Voltage vs. Temperature.
DS25133B-page 6
2012 Microchip Technology Inc.
MCP87022
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLE
MCP87022
5x6 PDFN
Symbol
Description
1, 2, 3
4
S
G
D
Source pin
Gate pin
5, 6, 7, 8
Drain pin, including exposed thermal pad
2012 Microchip Technology Inc.
DS25133B-page 7
MCP87022
4.0
4.1
PACKAGING INFORMATION
Package Marking Information*
8-Lead PDFN (5x6x1.0 mm)
Example
87022
U/MF
e
3
1219
256
NNN
PIN 1
PIN 1
*RoHS compliant using EU-RoHS exemption: 7(a) - Lead in high-melting-temperature-type solders
(i.e. lead-based alloys containing 85% by weight or more lead) can be found on the outer
packaging for this package.
Legend: XX...X Customer-specific information
Y
Year code (last digit of calendar year)
YY
WW
NNN
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
e
3
Pb-free JEDEC designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator (
can be found on the outer packaging for this package.
*
)
e
3
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
DS25133B-page 8
2012 Microchip Technology Inc.
MCP87022
2012 Microchip Technology Inc.
DS25133B-page 9
MCP87022
DS25133B-page 10
2012 Microchip Technology Inc.
MCP87022
2012 Microchip Technology Inc.
DS25133B-page 11
MCP87022
NOTES:
DS25133B-page 12
2012 Microchip Technology Inc.
MCP87022
APPENDIX A: REVISION HISTORY
Revision B (November 2012)
• Updated the section “Absolute Maximum
Ratings †” in the “Electrical Characteristics”
section.
Revision A (September 2012)
• Original Release of this Document.
2012 Microchip Technology Inc.
DS25133B-page 13
MCP87022
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
Device
X
/XX
Examples:
Temperature
Range
Package
a)
MCP87022T-U/MF:
Tape and Reel,
Ultra High Temperature,
8LD PDFN package
Device:
MCP87022T:
N-Channel Power MOSFET (Tape and Reel)
Temperature Range:
Package:
U
= -55°C to +150°C (Ultra High)
MF = 8-Lead High Power Dual Flatpack, No Lead Package
(5x6x1.0 mm Body) (PDFN), 8-lead
2012 Microchip Technology Inc.
DS25133B-page 14
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
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suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, dsPIC,
FlashFlex, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro,
PICSTART, PIC logo, rfPIC, SST, SST Logo, SuperFlash
and UNI/O are registered trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
32
FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,
MTP, SEEVAL and The Embedded Control Solutions
Company are registered trademarks of Microchip Technology
Incorporated in the U.S.A.
Silicon Storage Technology is a registered trademark of
Microchip Technology Inc. in other countries.
Analog-for-the-Digital Age, Application Maestro, BodyCom,
chipKIT, chipKIT logo, CodeGuard, dsPICDEM,
dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial
Programming, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB
Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code
Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit,
PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O,
Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA
and Z-Scale are trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
GestIC and ULPP are registered trademarks of Microchip
Technology Germany II GmbH & Co. & KG, a subsidiary of
Microchip Technology Inc., in other countries.
All other trademarks mentioned herein are property of their
respective companies.
© 2012, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
ISBN: 978-1-62076-664-4
QUALITY MANAGEMENT SYSTEM
CERTIFIED BY DNV
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
== ISO/TS 16949 ==
2012 Microchip Technology Inc.
DS25133B-page 15
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10/26/12
DS25133B-page 16
2012 Microchip Technology Inc.
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