MCP1631HVT-E/ML [MICROCHIP]
High-Speed, Pulse Width Modulator; 高速脉宽调制器型号: | MCP1631HVT-E/ML |
厂家: | MICROCHIP |
描述: | High-Speed, Pulse Width Modulator |
文件: | 总34页 (文件大小:564K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MCP1631/HV/MCP1631V/VHV
High-Speed, Pulse Width Modulator
Features
General Description
• Programmable Switching Battery Charger
Designs
The MCP1631/MCP1631V is a high-speed
analog pulse width modulator (PWM) used to develop
intelligent power systems. When combined with a
microcontroller, the MCP1631/MCP1631V will control
the power system duty cycle providing output voltage
or current regulation. The microcontroller can be used
to adjust output voltage or current, switching frequency
and maximum duty cycle while providing additional
features making the power system more intelligent,
robust and adaptable.
• High-Speed Analog PWM Controller
(2 MHz Operation)
• Combine with Microcontroller for “Intelligent”
Power System Development
• Peak Current Mode Control (MCP1631)
• Voltage Mode Control (MCP1631V)
• High Voltage Options Operate to +16V Input:
- MCP1631HV Current Mode
Typical applications for the MCP1631/MCP1631V
include programmable switch mode battery chargers
capable of charging multiple chemistries, like Li-Ion,
NiMH, NiCd and Pb-Acid configured as single or
multiple cells. By combining with a small
microcontroller, intelligent LED lighting designs and
programmable SEPIC topology voltage and current
sources can also be developed.
- MCP1631VHV Voltage Mode
• Regulated Output Voltage Options:
-
-
+5.0V or +3.3V
250 mA maximum current
• External Oscillator Input sets Switching
Frequency and Maximum Duty Cycle Limit
• External Reference Input Sets Regulation Voltage
or Current
The MCP1631/MCP1631V inputs were developed to
be attached to the I/O pins of a microcontroller for
design flexibility. Additional features integrated into the
MCP1631HV/MCP1631VHV provide signal condition-
ing and protection features for battery charger or
constant current source applications.
• Error Amplifier, Battery Current ISNS Amplifier,
Battery Voltage VSNS Amplifier Integrated
• Integrated Overvoltage Comparator
• Integrated High Current Low Side MOSFET
Driver (1A Peak)
For applications that operate from a high voltage input,
the MCP1631HV and MCP1631VHV device options
can be used to operate directly from a +3.5V to +16V
input. For these applications, an additional low drop out
+5V or +3.3V regulated output is available and can
provide current up to 250 mA to power a microcontroller
and auxiliary circuits.
• Shutdown mode reduces IQ to 2.4 µA (typical)
• Internal Overtemperature Protection
• Undervoltage Lockout (UVLO)
• Package Options:
- 4 mm x 4 mm 20-Lead QFN
(MCP1631/MCP1631V only)
- 20-Lead TSSOP (All Devices)
- 20-Lead SSOP (All Devices)
Applications
• High Input Voltage Programmable Switching
Battery Chargers
• Supports Multiple Chemistries Li-Ion, NiMH, NiCd
Intelligent and Pb-Acid
• LED Lighting Applications
• Constant Current SEPIC Power Train Design
• USB Input Programmable Switching Battery
Chargers
© 2008 Microchip Technology Inc.
DS22063B-page 1
MCP1631/HV/MCP1631V/VHV
Package Types
20-Lead SSOP and TSSOP
MCP1631/MCP1631V
20-Lead SSOP and TSSOP
MCP1631HV/MCP1631VHV
PGND
20
PGND
VEXT
19 PVDD
18
20
1
2
1
2
VEXT
19 PVDD
18
17 FB
SHDN
OSCIN
SHDN
OSCIN
CS/VRAMP
17 FB
3
3
CS/VRAMP
OSCDIS
4
OSCDIS
4
COMP
COMP
16
15
14
16
15
14
13
12
5
5
OVIN
VREF
OVIN
VREF
ISOUT
ISOUT
VSOUT
ISIN
6
6
VSOUT
7
7
AGND
NC
AGND
NC
13 ISIN
8
8
12
11
NC
NC
VSIN
9
9
VSIN
AVDD_IN
11 AVDD_OUT
10
10
NC
VIN
20 19 1 8 17 16
AGND
NC
1
2
15
PGND
14
VEXT
EP
21
AVDD_IN
3
4
13 PVDD
NC
12
11
NC
CS/VRAMP
VSIN
5
6
7
8
9
10
20 Lead 4x4 QFN
MCP1631/MCP1631V
DS22063B-page 2
© 2008 Microchip Technology Inc.
MCP1631/HV/MCP1631V/VHV
Typical Application Diagram
Multi-cell, Multi-Chemistry Charger
SCHOTTKY
CC
VIN Range +5.5V to +16V
CIN
DIODE
L1A
RTHERM
COUT
L1B
MCP1631HV
VEXT
VIN
CS
AVDD_OUT
PVDD
PGND
ISIN
OSCIN
ISOUT
NC
OVIN
VSIN
VREF
FB
NC
SHDN
OSCDIS
VSOUT
COMP
AGND
C
R
PIC12F683
GP1/C
GP3
VDD
AVDD_OUT
CCP1
GP5
GP4
GND
GP0/C
© 2008 Microchip Technology Inc.
DS22063B-page 3
MCP1631/HV/MCP1631V/VHV
Functional Block Diagram(1)
MCP1631HV/VHV High Speed PIC PWM
Internal Regulator for MCP1631HV and MCP1631VHV
Options Only; For MCP1631 and MCP1631V AVDD_IN is input
+3.3V or +5.0V
LDO
VDD
Internal
1.2V VREF
VIN
250 mA
VDD
Overvoltage Comp
w/ Hysteresis
AVDD_OUT / AVDD_IN
-
C2
+
Shutdown Control
A3 Remains On
SHDN
OVIN
PVDD
OSCDIS
VDD
100 kΩ
0.1 µA
OT
OSCIN
VEXT
UVLO
PGND
S
R
Q
VDD
VDD
100 kΩ
CS/VRAMP
COMP
10R
VDD
Q
+
C1
-
ISIN
R
R
-
VDD
A2
+
FB
VREF
-
A1
+
2R
ISOUT
Remove for MCP1631V
and MCP1631VHV Options
R
VDD
A3
AGND
2.7V Clamp
VSIN
+
-
Note 1: For Shutdown control, amplifier A3 remains functional so
VSOUT
battery voltage can be sensed during discharge phase.
2: For HV options, internal Low Drop Out Regulator provides
+3.3V or +5.0V bias to VDD
.
DS22063B-page 4
© 2008 Microchip Technology Inc.
MCP1631/HV/MCP1631V/VHV
† Notice: Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational sections of this specification is not intended.
Exposure to maximum rating conditions for extended periods
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
VIN - GND (MCP1631/V)................................................+6.5V
VIN - GND (MCP1631HV/VHV)....................................+18.0V
All Other I/O ..............................(GND - 0.3V) to (VDD + 0.3V)
LX to GND............................................. -0.3V to (VDD + 0.3V)
VEXT Output Short Circuit Current ........................Continuous
Storage temperature .....................................-65°C to +150°C
Maximum Junction Temperature...................-40°C to +150°C
Operating Junction Temperature...................-40°C to +125°C
ESD Protection On All Pins:
may affect device reliability.
HBM.................................................................................4 kV
MM..................................................................................400V
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, VIN = 3.0V to 5.5V, FOSC = 1 MHz with 10% Duty Cycle, CIN = 0.1 µF,
DD for typical values = 5.0V, TA for typical values = +25°C, TA = -40°C to +125°C for all minimum and maximums.
V
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input Characteristics
Input Voltage (MCP1631/V)
VDD
VDD
3.0
3.5
—
—
5.5
V
V
Non-HV Options
HV Options (Note 2)
Input Voltage
16.0
(MCP1631HV/VHV)
Undervoltage Lockout
(MCP1631/V)
UVLO
2.7
40
—
2.8
64
3.0
100
5
V
VIN Falling, VEXT low when input
below UVLO threshold
Undervoltage Lockout Hysteresis UVLO_HYS
(MCP1631/MCP1631V)
mV
mA
UVLO Hysteresis
Input Quiescent Current
(MCP1631/V, MCP1631HV,VHV)
I(VIN
)
3.7
SHDN = VDD =OSCDIS
SHDN = GND =OSCDIS,
Shutdown Current
IIN_SHDN
—
I_AVDD for MCP1631/V
I_VIN for MCP1631HV/VHV
2.4
4.4
12
17
µA
µA
Note: Amplifier A3 remains
powered during Shutdown.
OSCIN, OSCDIS and SHDN Input Levels
Low Level Input Voltage
High Level Input Voltage
Input Leakage Current
External Oscillator Range
VIL
—
—
—
0.8
—
1
V
V
VIH
2.0
ILEAK
FOSC
0.005
—
µA
—
—
2
MHz Maximum operating frequency is
dependent upon circuit topology
and duty cycle.
Minimum Oscillator High Time
Minimum Oscillator Low Time
T
T
OH_MIN.
OL_MIN.
10
—
ns
Oscillator Rise and Fall Time
Oscillator Input Capacitance
TR and TF
COSC
0.01
—
—
5
10
—
µs
pf
Note 1
Note 1: External Oscillator Input (OSCIN) rise and fall times between 10 ns and 10 µs were determined during device
characterization testing. Signal levels between 0.8V and 2.0V with rise and fall times measured between 10% and 90%
of maximum and minimum values. Not production tested. Additional timing specifications were fully characterized and
specified that are not production tested.
2: The minimum VIN must meet two conditions: VIN ≥ 3.5V and VIN ≥ (VOUT(MAX) + VDROPOUT(MAX)).
3: TCVOUT = (VOUT-HIGH - VOUT-LOW) *106 / (VR * ΔTemperature), VOUT-HIGH = highest voltage measured over the
temperature range. VOUT-LOW = lowest voltage measured over the temperature range.
4: Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCVOUT
.
5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with an applied input voltage of VOUT(MAX) + VDROPOUT(MAX) or 3.5V, whichever is greater.
© 2008 Microchip Technology Inc.
DS22063B-page 5
MCP1631/HV/MCP1631V/VHV
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise noted, VIN = 3.0V to 5.5V, FOSC = 1 MHz with 10% Duty Cycle, CIN = 0.1 µF,
V
DD for typical values = 5.0V, TA for typical values = +25°C, TA = -40°C to +125°C for all minimum and maximums.
Parameters
Sym
Min
Typ
Max
Units
Conditions
External Reference Input
Reference Voltage Input
VREF
0
—
AVDD
V
The reference input is capable of
rail-to-rail operation.
Internal Driver)
RDSON P-channel
RDSON N-channel
VEXT Rise Time
RDSon_P
RDSon_N
TRISE
—
—
—
7.2
3.8
2.5
15
15
18
Ω
Ω
ns
CL = 100 pF
Typical for VIN = 5V (Note 1)
VEXT Fall Time
TFALL
—
2.7
18
ns
CL = 100 pF
Typical for VIN = 5V (Note 1)
Error Amplifier (A1)
Input Offset Voltage
VOS
IBIAS
PSRR
VCM
-5
-0.6
0.05
85.4
—
+5
1
mV
µA
dB
V
A1 Input Bias Current
—
Error Amplifier PSRR
—
GND - 0.3
—
—
VIN
—
—
VIN = 3.0V to 5.0V, VCM = 1.2V
VIN = 5V, VCM = 0V to 2.5V
Common Mode Input Range
Common Mode Rejection Ratio
Open-loop Voltage Gain
90
dB
dB
AVOL
80
95
RL = 5 kΩ to VIN/2,
100 mV < VEAOUT < VIN - 100 mV,
VCM = 1.2V
Low-level Output
VOL
GBWP
ISINK
—
—
4
25
3.5
12
GND + 65
mV
RL = 5 kΩ to VIN/2
Gain Bandwidth Product
Error Amplifier Sink Current
—
—
MHz VIN = 5V
mA
VIN = 5V, VREF = 1.2V,
FB = 1.4V, VCOMP = 2.0V
VIN = 5V, VREF = 1.2V,
FB = 1.0V, VCOMP = 2.0V,
V
Error Amplifier Source Current
ISOURCE
-2
-9.8
—
mA
V
Absolute Value
Current Sense (CS) Amplifier (A2)
Input Offset Voltage
VOS
IBIAS
-3.0
—
1.2
0.13
65
+3.0
1
mV
µA
dB
CS Input Bias Current
CS Amplifier PSRR
PSRR
—
—
VIN = 3.0V to 5.0V, VCM = 0.12V,
GAIN = 10
Closed-loop Voltage Gain
A2VCL
—
10
—
V/V
RL = 5 kΩ to VIN/2,
100 mV < VOUT < VIN - 100 mV,
VCM = +0.12V
Low-level Output
VOL
ISINK
5
5
11
GND + 50
mV
mA
mA
RL = 5 kΩ to VIN/2
CS Sink Current
17.7
-19.5
—
—
CS Amplifier Source Current
Voltage Sense (VS) Amplifier (A3)
Input Offset Voltage
ISOURCE
-5
VOS
-5
0.9
+5
1
mV
µA
VS Input Bias Current
IBIAS
—
0.001
Note 1: External Oscillator Input (OSCIN) rise and fall times between 10 ns and 10 µs were determined during device
characterization testing. Signal levels between 0.8V and 2.0V with rise and fall times measured between 10% and 90%
of maximum and minimum values. Not production tested. Additional timing specifications were fully characterized and
specified that are not production tested.
2: The minimum VIN must meet two conditions: VIN ≥ 3.5V and VIN ≥ (VOUT(MAX) + VDROPOUT(MAX)).
3: TCVOUT = (VOUT-HIGH - VOUT-LOW) *106 / (VR * ΔTemperature), VOUT-HIGH = highest voltage measured over the
temperature range. VOUT-LOW = lowest voltage measured over the temperature range.
4: Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCVOUT
.
5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with an applied input voltage of VOUT(MAX) + VDROPOUT(MAX) or 3.5V, whichever is greater.
DS22063B-page 6
© 2008 Microchip Technology Inc.
MCP1631/HV/MCP1631V/VHV
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise noted, VIN = 3.0V to 5.5V, FOSC = 1 MHz with 10% Duty Cycle, CIN = 0.1 µF,
DD for typical values = 5.0V, TA for typical values = +25°C, TA = -40°C to +125°C for all minimum and maximums.
V
Parameters
Sym
Min
Typ
Max
Units
Conditions
VS Amplifier PSRR
PSRR
VCM
—
GND
—
65
—
1
—
AVDD
—
dB
V
VIN = 3.0V to 5.0V, VCM = 1.2V
Rail to Rail Input
Common Mode Input Range
Closed-loop Voltage Gain
A3VCL
V/V
RL = 5 kΩ to VIN/2,
100 mV < VEAOUT < VIN - 100 mV,
VCM = 1.2V
Low-level Output
VOL
ISINK
—
1
38
5
GND + 85
mV
mA
mA
RL = 5 kΩ to VIN/2
VS Amplifier Sink Current
VS Amplifier Source Current
Peak Current Sense Input (C1)
—
—
ISOURCE
-2
-5
Maximum Current Sense Signal
MCP1631/MCP1631HV
VCS_MAX
VRAMP
0.85
2.7
0.9
0.98
2.9
V
V
Maximum Ramp Signal
2.78
VIN > 4V
MCP1631V/MCP1631VHV
Maximum CS input range limited
by comparator input common
mode range. VCS_MAX = VIN-1.4V
Current Sense Input Bias Current
ICS_B
—
—
-0.1
8.5
—
µA
ns
VIN = 5V
Delay From CS to VEXT
MCP1631
TCS_VEXT
25
Note 1
Minimum Duty Cycle
DCMIN
—
—
0
%
VFB = VREF + 0.1V,
VCS = GND
Overvoltage Sense Comparator (C2)
OV Reference Voltage High
OV Reference Voltage Low
OV Hysteresis
OV_VREF_H
—
1.15
—
1.23
1.18
50
—
1.23
—
V
V
OV_VREF_L
OV_HYS
mV
Overvoltage Comparator
Hysteresis
OV_IN Bias Current
OV_IBIAS
TOV_VEXT
—
—
0.001
63
1
µA
ns
Delay From OV to VEXT
150
Delay from OV detection to PWM
termination (Note 1)
OV Input Capacitance
C_OV
—
5
—
pF
Internal Regulator HV Options Input / Output Characteristics
Input Operating Voltage
Maximum Output Current
Output Short Circuit Current
VIN
3.5
250
—
—
—
16.0
—
V
Note 2
IOUT_mA
IOUT_SC
mA
mA
400
—
VIN = VIN(MIN) (Note 2),
VOUT = GND,
Current (average current)
measured 10 ms after short is
applied.
Output Voltage Regulation
VOUT
VR-3.0%
—
VR±0.4% VR+3.0%
50 150
V
VR = 3.3V or 5.0V
VOUT Temperature Coefficient
TCVOUT
ppm/ Note 3
°C
Note 1: External Oscillator Input (OSCIN) rise and fall times between 10 ns and 10 µs were determined during device
characterization testing. Signal levels between 0.8V and 2.0V with rise and fall times measured between 10% and 90%
of maximum and minimum values. Not production tested. Additional timing specifications were fully characterized and
specified that are not production tested.
2: The minimum VIN must meet two conditions: VIN ≥ 3.5V and VIN ≥ (VOUT(MAX) + VDROPOUT(MAX)).
3: TCVOUT = (VOUT-HIGH - VOUT-LOW) *106 / (VR * ΔTemperature), VOUT-HIGH = highest voltage measured over the
temperature range. VOUT-LOW = lowest voltage measured over the temperature range.
4: Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCVOUT
.
5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with an applied input voltage of VOUT(MAX) + VDROPOUT(MAX) or 3.5V, whichever is greater.
© 2008 Microchip Technology Inc.
DS22063B-page 7
MCP1631/HV/MCP1631V/VHV
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise noted, VIN = 3.0V to 5.5V, FOSC = 1 MHz with 10% Duty Cycle, CIN = 0.1 µF,
V
DD for typical values = 5.0V, TA for typical values = +25°C, TA = -40°C to +125°C for all minimum and maximums.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Line Regulation
Load Regulation
ΔVOUT
/
-0.3
±0.1
+0.3
%/V (VOUT(MAX) + VDROPOUT(MAX)) ≤
VIN ≤ 16V Note 2
(VOUTXΔ
VIN
)
ΔVOUT
/
-2.5
±1.0
+2.5
%
IL = 1.0 mA to 250 mA, Note 4
VOUT
Dropout Voltage
Note 2, Note 5
VDROPOUT
—
—
—
330
525
650
725
—
mV
mV
µs
IL = 250 mA, VR = 5.0V
IL = 250 mA, VR = 3.3V
Output Delay Time
TDELAY
eN
1000
VIN = 0V to 6V, VOUT = 90% VR,
RL = 50Ω resistive
Output Noise
—
—
8
—
—
µV/
IL = 50 mA, f = 1 kHz, COUT =
(Hz)1/2 1 µF
Power Supply Ripple Rejection
Ratio
PSRR
44
dB
f = 100 Hz, COUT = 1 µF,
IL = 100 µA,
INAC =100 mV pk-pk,
IN = 0 µF, VR = 1.2V
V
C
Protection Features
Thermal Shutdown
TSHD
—
—
150
18
—
—
°C
°C
Thermal Shutdown Hysteresis
TSHD_HYS
Note 1: External Oscillator Input (OSCIN) rise and fall times between 10 ns and 10 µs were determined during device
characterization testing. Signal levels between 0.8V and 2.0V with rise and fall times measured between 10% and 90%
of maximum and minimum values. Not production tested. Additional timing specifications were fully characterized and
specified that are not production tested.
2: The minimum VIN must meet two conditions: VIN ≥ 3.5V and VIN ≥ (VOUT(MAX) + VDROPOUT(MAX)).
3: TCVOUT = (VOUT-HIGH - VOUT-LOW) *106 / (VR * ΔTemperature), VOUT-HIGH = highest voltage measured over the
temperature range. VOUT-LOW = lowest voltage measured over the temperature range.
4: Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCVOUT
.
5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with an applied input voltage of VOUT(MAX) + VDROPOUT(MAX) or 3.5V, whichever is greater.
TEMPERATURE SPECIFICATIONS
Electrical Specifications: Unless otherwise indicated, all limits are specified for: VIN + 3.0V to 5.5V
Parameters
Temperature Ranges
Sym
Min
Typ
Max
Units
Conditions
Operating Junction Temperature
Range
TJ
-40
—
+125
°C
Steady State
Storage Temperature Range
TA
TJ
-65
—
—
—
+150
+150
°C
°C
Maximum Junction Temperature
Package Thermal Resistances
Thermal Resistance, 20L-TSSOP
Transient
θJA
θJA
θJA
—
—
—
90
89.3
43
—
—
—
°C/W Typical 4 Layer board with
interconnecting vias
Thermal Resistance, 20L-SSOP
Thermal Resistance, 20L-QFN
°C/W Typical 4 Layer board with
interconnecting vias
°C/W Typical 4 Layer board with
interconnecting vias
DS22063B-page 8
© 2008 Microchip Technology Inc.
MCP1631/HV/MCP1631V/VHV
2.0
TYPICAL PERFORMANCE CURVES
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein are
not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise noted, VIN = 3.0V to 5.5V, FOSC = 1 MHz with 10% Duty Cycle, CIN = 0.1 µF, VIN for typical values = 5.0V, TA
for typical values = +25°C.
2.89
2.88
2.87
2.86
2.85
2.84
2.83
2.82
2.81
2.8
4.00
3.70
3.40
3.10
2.80
2.50
2.20
1.90
1.60
1.30
1.00
VDD = +5.5V
Device Turn On
VDD = +5.0V
VDD = +3.0V
VDD = +4.0V
VDD = +3.3V
Device Turn Off
Ambient Temperature (°C)
Ambient Temperature (°C)
FIGURE 2-1:
Undervoltage Lockout vs.
FIGURE 2-4:
Shutdown Current vs.
Temperature.
Temperature (MCP1631/MCP1631V).
0.068
0.067
0.066
0.065
0.064
0.063
0.062
0.061
1.60
VDD = +5.5V
VDD = +5.0V
1.50
1.40
1.30
1.20
1.10
1.00
VDD = +4.0V
VDD = +3.3V
VDD = +3.0V
Ambient Temperature (°C)
Ambient Temperature (°C)
FIGURE 2-2:
Undervoltage Lockout
FIGURE 2-5:
Oscillator Input Threshold
Hysteresis vs. Temperature.
vs. Temperature.
4.00
1.70
1.60
1.50
1.40
1.30
1.20
1.10
1.00
VDD = +5.5V
VDD = +5.0V
VDD = +5.5V
3.80
3.60
3.40
3.20
3.00
2.80
VDD = +5.0V
VDD = +4.0V
VDD = +4.0V
VDD = +3.3V
VDD = +3.3V
VDD = +3.0V
0.90
0.80
VDD = +3.0V
Ambient Temperature (°C)
Ambient Temperature (°C)
FIGURE 2-3:
Input Quiescent Current vs.
FIGURE 2-6:
Oscillator Disable Input
Temperature.
Threshold vs. Temperature.
© 2008 Microchip Technology Inc.
DS22063B-page 9
MCP1631/HV/MCP1631V/VHV
Typical Performance Curves (Continued)
Note: Unless otherwise noted, VIN = 3.0V to 5.5V, FOSC = 1 MHz with 10% Duty Cycle, CIN = 0.1 µF,
VIN for typical values = 5.0V, TA for typical values = +25°C.
14
12
10
8
5.0
4.7
4.4
4.1
3.8
3.5
3.2
2.9
2.6
2.3
2.0
CL = 100 pF
VDD = +3.0V
VDD = +3.3V
VDD = +3.3V
VDD = +3.0V
VDD = +4.0V
VDD = +5.0V
VDD = +4.0V
VDD = +5.0V
6
VDD = +5.5V
VDD = +5.5V
4
Ambient Temperature (°C)
Ambient Temperature (°C)
FIGURE 2-7:
V
P-Channel Driver
FIGURE 2-10:
V
Fall Time vs.
EXT
EXT
R
vs. Temperature.
Temperature.
DSON
6.6
6.2
5.8
-0.50
-0.55
-0.60
-0.65
-0.70
VDD = +5.0V
VDD = +3.3V
VDD = +5.5V
5.4
VDD = +3.0V
5.0
4.6
4.2
3.8
3.4
VDD = +3.0V
VDD = +3.3V
VDD = +4.0V
VDD = +4.0V
VDD = +5.0V
-0.75
-0.80
VDD = +5.5V
3.0
Ambient Temperature (°C)
Ambient Temperature (°C)
FIGURE 2-8:
V
N-Channel Driver
FIGURE 2-11:
Amplifier A1 Offset Voltage
EXT
R
vs. Temperature.
vs. Temperature.
DSON
40
35
30
25
20
15
10
4.7
4.4
CL = 100 pF
VDD = +3.3V
VDD = +5.5V
4.1
3.8
3.5
3.2
2.9
2.6
2.3
2.0
VDD = +5.0V
VDD = +4.0V
VDD = +3.0V
VDD = +4.0V
VDD = +5.5V
VDD = +5.0V
VDD = +3.3V
5
0
VDD = +3.0V
Ambient Temperature (°C)
Ambient Temperature (°C)
FIGURE 2-9:
V
Rise Time vs.
FIGURE 2-12:
Amplifier A1 Output Voltage
EXT
Temperature.
Low vs. Temperature.
DS22063B-page 10
© 2008 Microchip Technology Inc.
MCP1631/HV/MCP1631V/VHV
Typical Performance Curves (Continued)
Note: Unless otherwise noted, VIN = 3.0V to 5.5V, FOSC = 1 MHz with 10% Duty Cycle, CIN = 0.1 µF,
VIN for typical values = 5.0V, TA for typical values = +25°C.
18.8
17.6
16.4
15.2
14.0
12.8
11.6
10.4
9.2
18
16
14
12
10
8
VDD = +5.5V
VDD = +3.0V
VDD = +3.3V
VDD = +5.0V
VDD = +4.0V
VDD = +4.0V
VDD = +5.0V
VDD = +3.3V
VDD = +5.5V
6
VDD = +3.0V
8.0
4
Ambient Temperature (°C)
Ambient Temperature (°C)
FIGURE 2-13:
Amplifier A1 Sink Current
FIGURE 2-16:
Amplifier A2 Output Voltage
vs. Temperature.
Low vs. Temperature.
14.0
40
35
VDD = +5.0V
12.5
11.0
9.5
VDD = +4.0V
VDD = +3.3V
VDD = +4.0V
30
VDD = +3.0V
VDD = +5.5V
25
8.0
20
VDD = +5.0V
VDD = +3.3V
6.5
15
10
VDD = +3.0V
VDD = +5.5V
5.0
Ambient Temperature (°C)
Ambient Temperature (°C)
FIGURE 2-14:
Amplifier A1 Source Current
FIGURE 2-17:
Amplifier A2 Sink Current
vs. Temperature.
vs. Temperature.
1.6
1.4
1.2
1.0
0.8
26
24
22
20
VDD = +5.5V
VDD = +3.3V
VDD = +5.0V
VDD = +4.0V
VDD = +5.0V
18
16
14
12
10
VDD = +5.5V
VDD = +3.0V
VDD = +3.3V
0.6
VDD = +3.0V
0.4
Ambient Temperature (°C)
Ambient Temperature (°C)
FIGURE 2-15:
Amplifier A2 Offset Voltage
FIGURE 2-18:
Amplifier A2 Source Current
vs. Temperature.
vs. Temperature.
© 2008 Microchip Technology Inc.
DS22063B-page 11
MCP1631/HV/MCP1631V/VHV
Typical Performance Curves (Continued)
Note: Unless otherwise noted, VIN = 3.0V to 5.5V, FOSC = 1 MHz with 10% Duty Cycle, CIN = 0.1 µF,
VIN for typical values = 5.0V, TA for typical values = +25°C.
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2
VDD = +5.0V
VDD = +5.5V
VDD = +5.0V
1.5
1
VDD = +5.5V
VDD = +4.0V
VDD = +3.0V
VDD = +3.3V
0.5
0
VDD = +4.0V
VDD = +3.3V
VDD = +3.0V
Ambient Temperature (°C)
Ambient Temperature (°C)
FIGURE 2-19:
Amplifier A3 Offset Voltage
FIGURE 2-22:
Amplifier A3 Source Current
vs. Temperature.
vs. Temperature.
0.920
0.918
0.916
0.914
0.912
0.910
0.908
0.906
0.904
70
60
50
VDD = +5.5V
VDD = +5.0V
VDD = +5.5V
VDD = +5.0V
VDD = +4.0V
40
30
20
10
0
VDD = +4.0V
VDD = +3.3V
VDD = +3.0V
VDD = +3.0V
0.902
0.900
VDD = +3.3V
Ambient Temperature (°C)
Ambient Temperature (°C)
FIGURE 2-20:
Amplifier A3 Output Voltage
FIGURE 2-23:
MCP1631 and MCP1631HV
Low vs. Temperature.
CS Maximum Voltage (V) vs. Temperature.
6.8
6.3
5.8
5.3
4.8
4.3
3.8
3.3
2.8
2.790
VDD = +5.0V
2.788
2.786
2.784
2.782
2.780
2.778
2.776
2.774
2.772
2.770
VDD = +3.0V to +5.5V
Ambient Temperature (°C)
Ambient Temperature (°C)
FIGURE 2-21:
vs. Temperature.
Amplifier A3 Sink Current
FIGURE 2-24:
MCP1631VHV V
MCP1631V and
Max Voltage (V).
RAMP
DS22063B-page 12
© 2008 Microchip Technology Inc.
MCP1631/HV/MCP1631V/VHV
Typical Performance Curves (Continued)
Note: Unless otherwise noted, VIN = 3.0V to 5.5V, FOSC = 1 MHz with 10% Duty Cycle, CIN = 0.1 µF,
VIN for typical values = 5.0V, TA for typical values = +25°C.
1.27
1.26
1.25
1.24
1.23
1.22
1.21
1.2
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
VDD = +5.5V
VDD = +5.5V
VDD = +4.0V
VDD = +5.0V
VDD = +5.0V
VDD = +4.0V
VDD = +3.3V
VDD = +3.3V
VDD = +3.0V
VDD = +3.0V
Ambient Temperature (°C)
Ambinet Temperature (°C)
FIGURE 2-25:
Overvoltage Threshold
FIGURE 2-28:
Shutdown Input Voltage
High (V) vs. Temperature.
Threshold (V) vs. Temperature.
1.187
6.00
VOUT = 5.0V
IOUT = 0 µA
5.00
1.187
VDD = +3.0V
1.186
VDD = +4.0V
VDD = +3.3V
1.186
0°C
4.00
1.185
1.185
1.184
1.184
1.183
-45°C
+130°C
3.00
+25°C
+90°C
2.00
1.00
VDD = +5.5V
1.183
1.182
VDD = +5.0V
6
8
10
12
14
16
18
Input Voltage (V)
Ambient Temperature (°C)
FIGURE 2-26:
Overvoltage Threshold
FIGURE 2-29:
LDO Quiescent Current vs.
Low (V) vs. Temperature.
Input Voltage.
0.080
3.00
IOUT = 0mA
VOUT = 1.2V
VIN = 2.7V
VDD = +5.5V
VOUT = 2.5V
VIN = 3.5V
0.070
VDD = +3.3V
2.50
2.00
1.50
1.00
0.50
0.00
0.060
0.050
0.040
0.030
0.020
0.010
0.000
VDD = +4.0V
VOUT = 5.0V
VDD = +3.0V
VDD = +5.0V
VIN = 6.0V
-45
-20
5
30
55
80
105 130
Ambient Temperature (°C)
Junction Temperature (°C)
FIGURE 2-27:
Overvoltage Threshold
FIGURE 2-30:
LDO Quiescent Current vs.
Hysteresis (V) vs. Temperature.
Junction Temperature.
© 2008 Microchip Technology Inc.
DS22063B-page 13
MCP1631/HV/MCP1631V/VHV
Typical Performance Curves (Continued)
Note: Unless otherwise noted, VIN = 3.0V to 5.5V, FOSC = 1 MHz with 10% Duty Cycle, CIN = 0.1 µF,
VIN for typical values = 5.0V, TA for typical values = +25°C.
5.06
5.04
5.02
5.00
4.98
4.96
4.94
4.92
0.18
0.16
0.14
0.12
0.10
0.08
0.06
VIN = 6V
VOUT = 5.0V
VOUT = 5.0V
VIN = 6.0V to 16.0V
+90°C
+130°C
200 mA
0 mA
250 mA
0°C
-45°C
+25°C
100 mA
80
0
50
100
150
200
250
-45
-20
5
30
55
105
130
Load Current (mA)
Temperature (°C)
FIGURE 2-31:
LDO Output Voltage vs.
FIGURE 2-34:
LDO Line Regulation vs.
Load Current.
Temperature.
0.50
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
VOUT = 5.0V
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
+130°C
+90°C
+25°C
VR=5.0V
VIN=6.0V
+0°C
V
C
I
INAC = 100 mV p-p
IN=0 μF
OUT=100 µA
-45°C
0
25 50 75 100 125 150 175 200 225 250
Load Current (mA)
0.01
0.1
1
10
100
1000
Frequency (kHz)
FIGURE 2-32:
LDO Dropout Voltage vs.
FIGURE 2-35:
LDO PSRR vs. Frequency.
Load Current.
1.00
100
10
VOUT = 5.0V
OUT = 1 to 250 mA
IOUT = 50 mA
VR = 5.0V, VIN = 6.0V
I
0.80
0.60
0.40
0.20
0.00
-0.20
-0.40
VIN = 16V
VIN = 6V
1
VIN = 12V
0.1
0.01
VIN = 8V
VIN = 14V
0.001
0.01
-45
-20
5
30
55
80
105 130
0.1
1
10
100
1000
Frequency (kHz)
Temperature (°C)
FIGURE 2-36:
LDO Output Noise vs.
FIGURE 2-33:
LDO Load Regulation vs.
Frequency.
Temperature.
DS22063B-page 14
© 2008 Microchip Technology Inc.
MCP1631/HV/MCP1631V/VHV
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLE
MCP1631HV/
MCP1631/MCP1631V
MCP1631VHV
Sym
Description
4x4
TSSOP/SSOP
QFN
TSSOP/SSOP
1
2
15
16
17
18
19
20
1
1
2
PGND
SHDN
OSCIN
Power ground return
Shutdown input
3
3
External oscillator input
4
4
OSCDIS Oscillator disable input
5
5
OVIN
VREF
AGND
NC
Overvoltage comparator input
6
6
External voltage reference input
Quiet or analog ground
No connection
7
7
8,9,10
—
11
—
12
13
14
15
16
17
18
19
20
—
2,4,12
—
3
8,9
10
—
11
12
13
14
15
16
17
18
19
20
—
VIN
High voltage input
AVDD_IN Analog bias voltage input
AVDD_OUT Regulated VDD output
—
5
VSIN
ISIN
Voltage sense amplifier (A3) input
6
Current sense input
7
VSOUT
ISOUT
COMP
FB
Voltage sense amplifier output
Current sense amplifier output
Error amplifier (A1) output
Error amplifier inverting input (A1)
8
9
10
11
13
14
21
CS/VRAMP CS - current sense input; VRAMP voltage ramp input
PVDD
VEXT
EP
Power VDD input
External driver output
Exposed Thermal Pad (EP); must be connected to AGND
3.1
Power Ground (PGND
)
3.4
Oscillator Disable (OSCDIS)
Connect power ground return pin to power ground
plane, high peak current flows through the PGND during
the turn on and turn off the external MOSFET devices.
Oscillator disable input, used to asycnronously
terminate the VEXT duty cycle. Commonly used to
modulate current for LED driver applications.For
minimum shutdown IQ, connect OSCDIS to SHDN.
3.2
Shutdown Input (SHDN)
3.5
Overvoltage Input (OVIN)
Shutdown input logic low disables device and lowers IQ
to minimum value, amplifier A3 (VS) remains functional
for battery voltage sense applications.
Overvoltage Comparator input, connect to voltage
divider, internal comparator terminates VEXT output in
50 ns to limit output voltage to predetermined value.
3.3
Oscillator Input (OSCIN)
3.6
External Reference Voltage Input
(VREF
External Oscillator Input, used to set power train
switching frequency and maximum duty cycle, VEXT
enabled while low and disabled while high.
)
External Voltage Reference input, connect fixed or
variable external reference to VREF, with A1 configured
as an error amplifier, the power supply output variable
(voltage or current) will follow this input.
© 2008 Microchip Technology Inc.
DS22063B-page 15
MCP1631/HV/MCP1631V/VHV
3.7
Analog Ground (AGND
)
3.15 Current Sense Output (ISOUT)
Quiet or analog ground, connect to analog ground
plane to minimize noise on sensitive MCP1631
circuitry.
Current sense amplifier output, connect to error
amplifier (A1) inverting input (FB) to regulate SEPIC
output current.
3.8
No Connection (NC)
3.16 Error Amplifier Output (COMP)
No connection.
Error amplifier (A1) output, connect control loop
compensation from FB input to COMP output pin.
3.9
Input Voltage (VIN)
3.17 Feedback (FB)
High voltage input for MCP1631HV/MCP1631VHV
devices, operates from 3.5V to 16V input supply.
Error amplifier input (A1), connect to current sense
output amplifier (A2) to regulate current.
3.10 Analog supply Input (AVDD_IN
)
3.18 Current Sense or Voltage Ramp
Analog bias input, minimum 3.0V to 5.5V operation for
MCP1631/MCP1631V devices.
(CS/VRAMP
)
For MCP1631/MCP1631HV applications, connect to
low side current sense of SEPIC switch for current
mode control and peak current limit. For MCP1631/
MCP1631HV application, connect artificial ramp
voltage to VRAMP input for voltage mode PWM control.
3.11 Analog Supply Output (AVDD_OUT
)
Regulated VDD output used to power internal
MCP1631HV/MCP1631VHV and external
microcontroller, supplies up to 250 ma of bias current at
3.3V or 5.0V regulated low drop out rail.
3.19 Power VDD (PVDD
)
Power VDD input, VEXT gate drive supply input, connect
to +5.0V or +3.3V supply for driving external MOSFET.
3.12 Voltage Sense Input (VSIN)
Voltage sense amplifier (A3) input, connect to high
impedance battery voltage resistor divider to sense
battery voltage with minimal loading.
3.20 External Driver (VEXT
)
High current driver output used to drive external
MOSFET at high frequency, capable of 1A peak
3.13 Current Sense Input (ISIN)
currents with +5.0V PVDD
.
Connect to SEPIC secondary side sense resistor to
develop a regulated current source used to charge
multi-chemistry batteries.
3.21 Exposed PAD 4x4 QFN (EP)
There is an internal electrical connection between the
Exposed Thermal Pad (EP) and the AGND pin; they
must be connected to the same potential on the Printed
Circuit Board (PCB).
3.14 Voltage Sense Output (VSOUT
)
Voltage sense amplifier output, connect to
microcontroller analog to digital converter to measure
battery voltage.
DS22063B-page 16
© 2008 Microchip Technology Inc.
MCP1631/HV/MCP1631V/VHV
4.4
Current Sense Amplifier (A2)
4.0
4.1
DETAILED DESCRIPTION
Device Overview
The A2 current sense amplifier is used to sense current
in the secondary side of a SEPIC converter or
freewheeling current in a Buck converter. The inverting
amplifier has a built in voltage gain of ten with low offset
and high speed.
The MCP1631/MCP1631V device family combines the
analog functions to develop high frequency switch
mode power systems while integrating features for
battery charger and LED current source applications.
With the integration of a MOSFET driver, voltage
sense, current sense and over voltage protection, the
MCP1631/MCP1631V is a highly integrated, high-
speed analog pulse width modulator.
4.5
Voltage Sense Amplifier (A3)
The A3 voltage sense amplifier is used to sense battery
voltage. In battery powered applications, it is important
to minimize the steady stage load current draw on the
battery. The voltage sense amplifier (A3) is used to
buffer a high impedance series divider used to reduce
the battery pack voltage to a level that can be read
using an analog to digital converter. The voltage sense
amplifier draws a very low quiescent current and
remains functional when the MCP1631/MCP1631V is
shutdown making it possible to read battery voltage
without turning on the charger.
The MCP1631/MCP1631V output (VEXT) is used to
control the switch of the power system (on and off
time). By controlling the switch on and off time, the
power system output can be regulated. With the
oscillator and reference voltage as inputs, a simple
interface to a microcontroller is available with the
MCP1631/MCP1631V to develop intelligent power
systems. A good example of an intelligent power
system is a battery charger, programmable LED driver
current source or programmable power supply.
4.6
Overvoltage Comparator(C2)
The MCP1631/MCP1631V is
a combination of
The C2 overvoltage comparator is used to prevent the
power system from being damaged when the load
(battery) is disconnected. By comparing the divided
down power train output voltage with a 1.2V internal
reference voltage, the MCP1631/MCP1631V VEXT
output switching is interrupted when the output voltage
is above a pre-set value. This limits the output voltage
of the power train, the 0V comparator’s hysteresis will
operate as a ripple regulator.
specialty analog blocks consisting of a Pulse Width
Modulator (PWM), MOSFET Driver, Current Sense
Amplifier (A2), Voltage Sense Amplifier (A3),
Overvoltage Comparator (C2) and additional features
(Shutdown, Undervoltage Lockout, Overtemperature
Protection). For the HV options, an internal low dropout
regulator is integrated for operation from high voltage
inputs (MCP1631HV/MCP1631VHV).
4.2
Pulse Width Modulator (PWM)
4.7
Shutdown Input
The internal PWM of the MCP1631/MCP1631V is
comprised of an error amplifier, high-speed comparator
and latch. The output of the amplifier is compared to
either the MCP1631 CS (primary current sense input)
or the MCP1631V VRAMP (voltage mode ramp input) of
the high speed comparator. When the CS or VRAMP
signal reach the level of the error amplifier output, the
on cycle is terminated and the external switch is
latched off until the beginning of the next cycle (high to
low transition of OSCIN).
The MCP1631/MCP1631V shutdown feature is used to
disable the device with the exception of the voltage
sense amplifier A3 to minimize quiescent current draw.
While shutdown, A3 remains operational while the
device draws 4.4 µA from the input.
4.8
Protection
The MCP1631/MCP1631V has built in Undervoltage
Lockout (UVLO) that ensures the output VEXT pin is
forced to a known state (low) when the input voltage or
AVDD is below the specified value. This prevents the
main MOSFET switch from being turned on during a
power up or down sequence.
4.3
VEXT MOSFET Driver
The MCP1631/MCP1631V output can be used to drive
the external MOSFET directly for low side topology
applications. The VEXT is capable of sourcing up to
700 mA and sinking up to 1A of current from a PVDD
source of 5V. Typical output power using the VEXT
output to directly drive the external MOSFET can
exceed 50W depending upon application and switching
frequency.
The MCP1631/MCP1631V provides
a
thermal
shutdown protection feature, if the internal junction
temperature of the device becomes high, the
overtemperature protection feature will disable (pull the
VEXT output low) and shut down the power train.
© 2008 Microchip Technology Inc.
DS22063B-page 17
MCP1631/HV/MCP1631V/VHV
NOTES:
DS22063B-page 18
© 2008 Microchip Technology Inc.
MCP1631/HV/MCP1631V/VHV
inductors has significant advantages in addition to the
size and cost benefits of a single core with multiple
windings.
5.0
5.1
APPLICATION INFORMATION
Typical Applications
The MCP1631/MCP1631V can be used to develop
intelligent power management solutions, typical
applications include a multi-chemistry battery charger
used to charge Li-Ion, NiMH or NiCd batteries and
constant current LED drivers.
5.4
Mixed Signal Design
For intelligent battery charger design, a microcontroller
is used to generate the proper charge profile, charge
termination, safety timers and battery charger features.
When using the MCP1631/MCP1631V for Li-Ion
battery charger applications, the microcontroller is also
used to generate the constant voltage regulation phase
of the charge cycle. This is accomplished by using the
external reference feature of the MCP1631/MCP1631V
as a programmable current source. The microcontroller
is used to vary the VREF input of the MCP1631/
MCP1631V. The charge current into the battery is
regulated by the MCP1631/MCP1631V, the level that it
is regulated to is set by the programmability of the
microcontroller.
5.2
Battery Charger Design Overview
The design approach for developing high current
switching battery chargers using the MCP1631 is
described in this section. Depending on input voltage
range, there are two versions of the device that can be
used to accommodate a very wide range of input
voltages.
For a regulated input voltage range of 5V, the
MCP1631/MCP1631V device is used, for this input
voltage application (regulated ac-dc converter or USB
input), the MCP1631/MCP1631V is powered directly
from the 5V dc input.
The internal MCP1631/MCP1631V analog compo-
nents are used to regulate the microcontroller
programmed current. The secondary or battery current
is sensed using amplifier A2, the output of A2 is feed
into the input of the error amplifier A1, the output of A1
sets the peak switch current of the SEPIC converter, it
increases or decreases the battery current to match its
(A1) inputs. By increasing the VREF or non-inverting
input of A1, the battery current is increased.
For input voltages to +16V steady state with +18V
transients, the MCP1631HV/MCP1631VHV, or high
voltage option can be used. The high voltage devices
integrate a low dropout (LDO) linear regulator with a set
output voltage of +3.3V or +5.0V that internally powers
the MCP1631HV/MCP1631VHV and is also capable of
providing 250 mA of bias current for the attached
microcontroller and other circuitry. MCP1631HV/
MCP1631VHV internal power dissipation must be
considered when loading the internal LDO regulator.
5.5
Safety Features
The MCP1631/MCP1631V integrates a high-speed
comparator used to protect the charger and battery
from being exposed to high voltages if the battery is
removed or opens. Comparator C2 is used to sense the
SEPIC output voltage. If the divided down output
voltage becomes higher than the 1.2V internal
MCP1631/MCP1631V reference, the VEXT PWM
output is terminated within 50 ns preventing the build
up of voltage on the SEPIC output.
For higher input voltages the MCP1631/MCP1631V
can be biased from an external regulated +3.0V to
+5.5V supply.
5.3
Programmable Single Ended
Primary Inductive (SEPIC) Current
Source
Peak switch current is limited by the MCP1631/
MCP1631V comparator C1 and error amplifier A1
output voltage clamp. For the MCP1631, the error
amplifier output is clamped at 2.7V. The A1 output is
divided down by 1/3 and compared with CS (current
sense) input. The VEXT output is turned off if the CS
input reaches a level of 1/3 of 2.7V or 0.9V in 12 ns,
preventing the external switch current from becoming
high enough to damage the SEPIC power train.
The MCP1631/MCP1631V family integrates features
that are necessary to develop programmable current
sources. The SEPIC converter is commonly used in
battery charger applications. The primary or input
inductor is used to filter input current and minimize the
switching noise at the converter input. The primary to
secondary capacitive isolation blocks any dc path from
input to output making the SEPIC safer than Buck or
other non-isolated topologies. The SEPIC rectifier
blocks the reverse path preventing battery leakage, in
other topologies an additional diode for blocking is
necessary adding additional components and
efficiency loss.
Internal overtemperature protection limits the device
junction temperature to 150°C preventing catastrophic
failure for overtemperature conditions. Once the
temperature decreases 10°C, the device will resume
normal operation.
The input or primary inductor and output or secondary
inductor are typically constructed from a single
magnetic device with two windings, this is commonly
referred to as a coupled inductor. Using coupled
Safety timers are typically used to limit the amount of
energy into a faulted battery or pack. This is
accomplished using the microcontroller and MCP1631/
MCP1631V shutdown feature.
© 2008 Microchip Technology Inc.
DS22063B-page 19
MCP1631/HV/MCP1631V/VHV
5.6
OSC Disable Feature
The oscillator disable or OSC_DIS input is used to
asychronously terminate the PWM VEXT output. This
can be used with a slow PWM input to modulate current
into an LED for lighting applications.
Multi-cell Multi-Chemistry Charger
SCHOTTKY
DIODE
C
C
V
Range +4.5V to +5.5V
CIN
IN
L1A
R
THERM
C
OUT
L1B
MCP1631
V
NC
A
EXT
CS
VDD_IN
P
GND
P
VDD
IS
OSC
IS
IN
IN
OV
OUT
IN
VS
NC
FB
NC
IN
V
REF
SHDN
OSC
COMP
DIS
VS
A
OUT
GND
C
R
PIC12F683
V
GP1/C
GP3
DD
A
VDD_OUT
CCP1
GP4
GP5
GND
GP0/C
FIGURE 5-1:
+5V ac-dc or USB Input Application.
DS22063B-page 20
© 2008 Microchip Technology Inc.
MCP1631/HV/MCP1631V/VHV
Multi-cell Multi-Chemistry Charger
SCHOTTKY
CC
VIN Range +5.5V to +16V
CIN
DIODE
L1A
RTHERM
COUT
L1B
MCP1631HV
VEXT
VIN
AVDD_OUT
CS
PGND
ISIN
PVDD
OSCIN
ISOUT
OVIN
VSIN
NC
FB
NC
VREF
SHDN
OSCDIS
VSOUT
COMP
AGND
C
R
PIC12F683
VDD
GP1/C
GP3
AVDD_OUT
CCP1
GP4
GP5
GND
GP0/C
FIGURE 5-2:
+5.5V to +16.0V Input.
© 2008 Microchip Technology Inc.
DS22063B-page 21
MCP1631/HV/MCP1631V/VHV
Multi-cell Multi-Chemistry Charger
VIN Range +6V to +40V
SCHOTTKY
DIODE
CIN
CC
L1A
+5V
HV
RTHERM
Regulator
COUT
COUT
L1B
MCP1631
VEXT
NC
AVDD_IN
CS
PGND
PVDD
OSCIN
ISOUT
ISIN
OVIN
VSIN
NC
VREF
SHDN
FB
NC
OSCDIS
VSOUT
COMP
AGND
C
R
PIC12F683
VDD
GP1/C
GP3
AVDD_OUT
CCP1
GP4
GND
GP5
GP0/C
FIGURE 5-3:
Wide Range High Voltage Input.
DS22063B-page 22
© 2008 Microchip Technology Inc.
MCP1631/HV/MCP1631V/VHV
6.0
6.1
PACKAGING INFORMATION
Package Marking Information (Not to Scale)
20-Lead 4x4 QFN (MCP1631/MCP1631V)
Example:
XXXXX
1631
XXXXXX
XXXXXX
YWWNNN
e
3
E/ML^^
0822
256
20-Lead SSOP (All Devices)
Example:
XXXXXXXXXXX
XXXXXXXXXXX
YYWWNNN
1631V
EST^^
0822256
e
3
20-Lead TSSOP (All Devices)
Example:
XXXXXXXX
XXXXXNNN
YYWW
1631HV33
EST^^256
e
3
0822
Legend: XX...X Customer-specific information
Y
Year code (last digit of calendar year)
YY
WW
NNN
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
e
3
Pb-free JEDEC designator for Matte Tin (Sn)
*
This package is Pb-free. The Pb-free JEDEC designator (
can be found on the outer packaging for this package.
)
e3
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
© 2008 Microchip Technology Inc.
DS22063B-page 23
MCP1631/HV/MCP1631V/VHV
ꢀꢁꢂꢃꢄꢅꢆꢇꢈꢉꢅꢊꢋꢌꢍꢇꢎꢏꢅꢆꢇꢐꢉꢅꢋꢑꢇꢒꢓꢇꢃꢄꢅꢆꢇꢈꢅꢍꢔꢅꢕꢄꢇꢖꢗꢃꢘꢇMꢇꢙꢚꢙꢚꢁꢛꢜꢇ ꢇ!ꢓꢆ"ꢇ#ꢎꢐꢒ$
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M
=
ꢒꢓꢋꢄꢊ%
ꢀꢁ ꢂꢃꢄꢅꢀꢅꢆꢃ !ꢇꢈꢅꢃꢄ"ꢉ#ꢅ$ꢉꢇ%!ꢊꢉꢅ&ꢇꢋꢅꢆꢇꢊꢋ'ꢅ(!%ꢅ&! %ꢅ(ꢉꢅꢈꢌꢍꢇ%ꢉ"ꢅ)ꢃ%ꢎꢃꢄꢅ%ꢎꢉꢅꢎꢇ%ꢍꢎꢉ"ꢅꢇꢊꢉꢇꢁ
ꢏꢁ ꢂꢇꢍ*ꢇꢐꢉꢅꢃ ꢅ ꢇ)ꢅ ꢃꢄꢐ!ꢈꢇ%ꢉ"ꢁ
+ꢁ ꢑꢃ&ꢉꢄ ꢃꢌꢄꢃꢄꢐꢅꢇꢄ"ꢅ%ꢌꢈꢉꢊꢇꢄꢍꢃꢄꢐꢅꢒꢉꢊꢅꢓꢔꢕ,ꢅ-ꢀꢖꢁ.ꢕꢁ
/ꢔ01 /ꢇ ꢃꢍꢅꢑꢃ&ꢉꢄ ꢃꢌꢄꢁꢅꢗꢎꢉꢌꢊꢉ%ꢃꢍꢇꢈꢈꢋꢅꢉ#ꢇꢍ%ꢅꢆꢇꢈ!ꢉꢅ ꢎꢌ)ꢄꢅ)ꢃ%ꢎꢌ!%ꢅ%ꢌꢈꢉꢊꢇꢄꢍꢉ ꢁ
ꢘ,21 ꢘꢉ$ꢉꢊꢉꢄꢍꢉꢅꢑꢃ&ꢉꢄ ꢃꢌꢄ'ꢅ! !ꢇꢈꢈꢋꢅ)ꢃ%ꢎꢌ!%ꢅ%ꢌꢈꢉꢊꢇꢄꢍꢉ'ꢅ$ꢌꢊꢅꢃꢄ$ꢌꢊ&ꢇ%ꢃꢌꢄꢅꢒ!ꢊꢒꢌ ꢉ ꢅꢌꢄꢈꢋꢁ
ꢕꢃꢍꢊꢌꢍꢎꢃꢒ ꢗꢉꢍꢎꢄꢌꢈꢌꢐꢋ ꢑꢊꢇ)ꢃꢄꢐ 0ꢚꢖꢝꢀꢏ</
DS22063B-page 24
© 2008 Microchip Technology Inc.
MCP1631/HV/MCP1631V/VHV
ꢒꢓꢋꢄ% 2ꢌꢊꢅ%ꢎꢉꢅ&ꢌ %ꢅꢍ!ꢊꢊꢉꢄ%ꢅꢒꢇꢍ*ꢇꢐꢉꢅ"ꢊꢇ)ꢃꢄꢐ 'ꢅꢒꢈꢉꢇ ꢉꢅ ꢉꢉꢅ%ꢎꢉꢅꢕꢃꢍꢊꢌꢍꢎꢃꢒꢅꢂꢇꢍ*ꢇꢐꢃꢄꢐꢅꢔꢒꢉꢍꢃ$ꢃꢍꢇ%ꢃꢌꢄꢅꢈꢌꢍꢇ%ꢉ"ꢅꢇ%ꢅ
ꢎ%%ꢒ133)))ꢁ&ꢃꢍꢊꢌꢍꢎꢃꢒꢁꢍꢌ&3ꢒꢇꢍ*ꢇꢐꢃꢄꢐ
© 2008 Microchip Technology Inc.
DS22063B-page 25
MCP1631/HV/MCP1631V/VHV
ꢀꢁꢂꢃꢄꢅꢆꢇꢈꢉꢅꢊꢋꢌꢍꢇ&'(ꢌ)ꢔꢇ& ꢅꢉꢉꢇ*ꢏꢋꢉꢌ)ꢄꢇꢖ&&ꢘꢇMꢇ+ꢛ,ꢁꢇ ꢇ!ꢓꢆ"ꢇ#&&*ꢈ$ꢇ
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D
N
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NOTE 1
1
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e
b
c
A2
A
φ
A1
L1
L
4ꢄꢃ%
ꢕꢙ55ꢙꢕ,ꢗ,ꢘꢔ
ꢑꢃ&ꢉꢄ ꢃꢌꢄꢅ5ꢃ&ꢃ%
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/ꢔ01 /ꢇ ꢃꢍꢅꢑꢃ&ꢉꢄ ꢃꢌꢄꢁꢅꢗꢎꢉꢌꢊꢉ%ꢃꢍꢇꢈꢈꢋꢅꢉ#ꢇꢍ%ꢅꢆꢇꢈ!ꢉꢅ ꢎꢌ)ꢄꢅ)ꢃ%ꢎꢌ!%ꢅ%ꢌꢈꢉꢊꢇꢄꢍꢉ ꢁ
ꢘ,21 ꢘꢉ$ꢉꢊꢉꢄꢍꢉꢅꢑꢃ&ꢉꢄ ꢃꢌꢄ'ꢅ! !ꢇꢈꢈꢋꢅ)ꢃ%ꢎꢌ!%ꢅ%ꢌꢈꢉꢊꢇꢄꢍꢉ'ꢅ$ꢌꢊꢅꢃꢄ$ꢌꢊ&ꢇ%ꢃꢌꢄꢅꢒ!ꢊꢒꢌ ꢉ ꢅꢌꢄꢈꢋꢁ
ꢕꢃꢍꢊꢌꢍꢎꢃꢒ ꢗꢉꢍꢎꢄꢌꢈꢌꢐꢋ ꢑꢊꢇ)ꢃꢄꢐ 0ꢚꢖꢝꢚꢜꢏ/
DS22063B-page 26
© 2008 Microchip Technology Inc.
MCP1631/HV/MCP1631V/VHV
ꢀꢁꢂꢃꢄꢅꢆꢇꢈꢉꢅꢊꢋꢌꢍꢇ-'ꢌ)ꢇ&'(ꢌ)ꢔꢇ& ꢅꢉꢉꢇ*ꢏꢋꢉꢌ)ꢄꢇꢖ&-ꢘꢇMꢇꢙꢛꢙꢇ ꢇ!ꢓꢆ"ꢇ#-&&*ꢈ$
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e
b
c
φ
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L
A1
L1
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© 2008 Microchip Technology Inc.
DS22063B-page 27
MCP1631/HV/MCP1631V/VHV
NOTES:
DS22063B-page 28
© 2008 Microchip Technology Inc.
MCP1631/HV/MCP1631V/VHV
APPENDIX A: REVISION HISTORY
Revision B (October 2008)
The following is the list of modifications:
1. Section 2.0 “Typical Performance Curves”,
Input Offset Voltage: changed minimum, typical,
maximum from -0.6, -, +0.6 to -5, -0.6, +5,
respectively;
2. Updated Section 6.0 “Packaging Informa-
tion”;
3. Updated the Product Identification System.
Revision A (October 2007)
• Original Release of this Document.
© 2008 Microchip Technology Inc.
DS22063B-page 29
MCP1631/HV/MCP1631V/VHV
NOTES:
DS22063B-page 30
© 2008 Microchip Technology Inc.
MCP1631/HV/MCP1631V/VHV
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
Device
-XXX
X
/XX
Examples:
Voltage Temperature
Options
Package
a) MCP1631-E/ML:
High-Speed PWM,
20LD QFN package.
High-Speed PWM,
20LD SSOP package.
High-Speed PWM,
20LD TSSOP package.
Range
b) MCP1631-E/SS:
c) MCP1631-E/ST:
Device
MCP1631:
MCP1631T:
High-Speed PWM
High-Speed PWM
Tape and Reel
MCP1631HV: High-Speed PWM
MCP1631HVT: High-Speed PWM
Tape and Reel
MCP1631HV: High-Speed PWM
MCP1631HVT: High-Speed PWM
Tape and Reel
a) MCP1631HV-330E/SS:High Speed PWM,
Current Mode Control,
3.3V Internal Regulator,
20LD SSOP Package.
b) MCP1631HV-500E/SS: High Speed PWM,
Current Mode Control,
MCP1631VHV: High-Speed PWM
MCP1631VHVT:High-Speed PWM
Tape and Reel
5.0V Internal Regulator,
20LD SSOP Package.
c) MCP1631HV-500E/ST:High Speed PWM,
Current Mode Control,
Voltage options
330
500
=
=
3.3V
5.0V
5.0V Internal Regulator,
20LD TSSOP Package.
Temperature Range
Package
E
=
-40°C to +125°C
a) MCP1631VHVT-500E/ST:High Speed PWM,
Voltage Mode Control,
ML
SS
ST
=
=
=
Plastic Quad Flat, No Lead (4x4x0.9), 20-lead
Plastic Shrink Small Outline (5.30 mm), 20-lead
Plastic Thin Shrink Small Outline (4.4 mm),
20-Lead
5.0V Internal Regulator,
20LD TSSOP Package.
b) MCP1631VHV-330E/SS: High Speed PWM,
Voltage Mode Control,
* All package offerings are Pb Free (Lead Free)
3.3V Internal Regulator,
20LD SSOP Package.
c) MCP1631VHV-330E/ST:High Speed PWM,
Voltage Mode Control,
3.3V Internal Regulator,
20LD TSSOP Package.
© 2008 Microchip Technology Inc.
DS22063B-page 31
MCP1631/HV/MCP1631V/VHV
NOTES:
DS22063B-page 32
© 2008 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, Accuron,
dsPIC, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro,
PICSTART, rfPIC, SmartShunt and UNI/O are registered
trademarks of Microchip Technology Incorporated in the
U.S.A. and other countries.
FilterLab, Linear Active Thermistor, MXDEV, MXLAB,
SEEVAL, SmartSensor and The Embedded Control Solutions
Company are registered trademarks of Microchip Technology
Incorporated in the U.S.A.
Analog-for-the-Digital Age, Application Maestro, CodeGuard,
dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
ECONOMONITOR, FanSense, In-Circuit Serial
Programming, ICSP, ICEPIC, Mindi, MiWi, MPASM, MPLAB
Certified logo, MPLIB, MPLINK, mTouch, PICkit, PICDEM,
PICDEM.net, PICtail, PIC32 logo, PowerCal, PowerInfo,
PowerMate, PowerTool, REAL ICE, rfLAB, Select Mode, Total
Endurance, WiperLock and ZENA are trademarks of
Microchip Technology Incorporated in the U.S.A. and other
countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2008, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Microchip received ISO/TS-16949:2002 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
© 2008 Microchip Technology Inc.
DS22063B-page 33
WORLDWIDE SALES AND SERVICE
AMERICAS
ASIA/PACIFIC
ASIA/PACIFIC
EUROPE
Corporate Office
Asia Pacific Office
Suites 3707-14, 37th Floor
Tower 6, The Gateway
Harbour City, Kowloon
Hong Kong
Tel: 852-2401-1200
Fax: 852-2401-3431
India - Bangalore
Tel: 91-80-4182-8400
Fax: 91-80-4182-8422
Austria - Wels
Tel: 43-7242-2244-39
Fax: 43-7242-2244-393
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200
Fax: 480-792-7277
Technical Support:
http://support.microchip.com
Web Address:
www.microchip.com
Denmark - Copenhagen
Tel: 45-4450-2828
Fax: 45-4485-2829
India - New Delhi
Tel: 91-11-4160-8631
Fax: 91-11-4160-8632
France - Paris
Tel: 33-1-69-53-63-20
Fax: 33-1-69-30-90-79
India - Pune
Tel: 91-20-2566-1512
Fax: 91-20-2566-1513
Australia - Sydney
Tel: 61-2-9868-6733
Fax: 61-2-9868-6755
Atlanta
Duluth, GA
Tel: 678-957-9614
Fax: 678-957-1455
Germany - Munich
Tel: 49-89-627-144-0
Fax: 49-89-627-144-44
Japan - Yokohama
Tel: 81-45-471- 6166
Fax: 81-45-471-6122
China - Beijing
Tel: 86-10-8528-2100
Fax: 86-10-8528-2104
Italy - Milan
Tel: 39-0331-742611
Fax: 39-0331-466781
Korea - Daegu
Tel: 82-53-744-4301
Fax: 82-53-744-4302
Boston
China - Chengdu
Tel: 86-28-8665-5511
Fax: 86-28-8665-7889
Westborough, MA
Tel: 774-760-0087
Fax: 774-760-0088
Netherlands - Drunen
Tel: 31-416-690399
Fax: 31-416-690340
Korea - Seoul
China - Hong Kong SAR
Tel: 852-2401-1200
Fax: 852-2401-3431
Tel: 82-2-554-7200
Fax: 82-2-558-5932 or
82-2-558-5934
Chicago
Itasca, IL
Tel: 630-285-0071
Fax: 630-285-0075
Spain - Madrid
Tel: 34-91-708-08-90
Fax: 34-91-708-08-91
China - Nanjing
Tel: 86-25-8473-2460
Fax: 86-25-8473-2470
Malaysia - Kuala Lumpur
Tel: 60-3-6201-9857
Fax: 60-3-6201-9859
Dallas
Addison, TX
Tel: 972-818-7423
Fax: 972-818-2924
UK - Wokingham
Tel: 44-118-921-5869
Fax: 44-118-921-5820
China - Qingdao
Tel: 86-532-8502-7355
Fax: 86-532-8502-7205
Malaysia - Penang
Tel: 60-4-227-8870
Fax: 60-4-227-4068
Detroit
Farmington Hills, MI
Tel: 248-538-2250
Fax: 248-538-2260
China - Shanghai
Tel: 86-21-5407-5533
Fax: 86-21-5407-5066
Philippines - Manila
Tel: 63-2-634-9065
Fax: 63-2-634-9069
Kokomo
Kokomo, IN
Tel: 765-864-8360
Fax: 765-864-8387
China - Shenyang
Tel: 86-24-2334-2829
Fax: 86-24-2334-2393
Singapore
Tel: 65-6334-8870
Fax: 65-6334-8850
China - Shenzhen
Tel: 86-755-8203-2660
Fax: 86-755-8203-1760
Taiwan - Hsin Chu
Tel: 886-3-572-9526
Fax: 886-3-572-6459
Los Angeles
Mission Viejo, CA
Tel: 949-462-9523
Fax: 949-462-9608
China - Wuhan
Tel: 86-27-5980-5300
Fax: 86-27-5980-5118
Taiwan - Kaohsiung
Tel: 886-7-536-4818
Fax: 886-7-536-4803
Santa Clara
Santa Clara, CA
Tel: 408-961-6444
Fax: 408-961-6445
China - Xiamen
Tel: 86-592-2388138
Fax: 86-592-2388130
Taiwan - Taipei
Tel: 886-2-2500-6610
Fax: 886-2-2508-0102
Toronto
Mississauga, Ontario,
Canada
Tel: 905-673-0699
Fax: 905-673-6509
China - Xian
Tel: 86-29-8833-7252
Fax: 86-29-8833-7256
Thailand - Bangkok
Tel: 66-2-694-1351
Fax: 66-2-694-1350
China - Zhuhai
Tel: 86-756-3210040
Fax: 86-756-3210049
01/02/08
DS22063B-page 34
© 2008 Microchip Technology Inc.
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