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HV9919BK7-G

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描述：Hysteretic, Buck, High Brightness LED Driver with High-Side Current Sensing

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HV9919BK7-G 概述

Hysteretic, Buck, High Brightness LED Driver with High-Side Current Sensing LED驱动器显示驱动器

HV9919BK7-G 规格参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	HVSON, SOLCC8,.12,25	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8542.39.00.01
Factory Lead Time：	7 weeks	风险等级：	1.19
接口集成电路类型：	LED DISPLAY DRIVER	JESD-30 代码：	S-PDSO-N8
JESD-609代码：	e3	长度：	3 mm
复用显示功能：	NO	功能数量：	1
区段数：	1	端子数量：	8
最高工作温度：	125 °C	最低工作温度：	-40 °C
封装主体材料：	PLASTIC/EPOXY	封装代码：	HVSON
封装等效代码：	SOLCC8,.12,25	封装形状：	SQUARE
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	260
电源：	12 V	认证状态：	Not Qualified
座面最大高度：	0.8 mm	子类别：	Display Drivers
最大供电电压：	40 V	最小供电电压：	4.5 V
标称供电电压：	12 V	表面贴装：	YES
温度等级：	AUTOMOTIVE	端子面层：	Matte Tin (Sn) - annealed
端子形式：	NO LEAD	端子节距：	0.65 mm
端子位置：	DUAL	处于峰值回流温度下的最长时间：	40
宽度：	3 mm	Base Number Matches：	1

HV9919BK7-G 数据手册

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HV9919B

Hysteretic, Buck, High Brightness LED Driver

with High-Side Current Sensing

Features

Description

• Hysteretic control with high-side current sensing

• Wide input-voltage range: 4.5 to 40V

• >90% Efficiency

HV9919B is a Pulse-Width Modulation (PWM) control-

ler IC designed to drive high-brightness LEDs using a

buck topology. It operates from an input voltage of 4.5

to 40VDC and employs hysteretic control, with a high-

side current sense resistor, to set the constant output

current.

• Typical ±5% LED current accuracy

• Up to 2.0MHz switching frequency

• Adjustable constant LED current

• Analog or PWM control signal for PWM dimming

• Over-temperature protection

Set the operating frequency range by selecting the

proper inductor. Operation at high switching frequency

is possible since the hysteretic control maintains accu-

racy even at high frequencies. This permits the use of

small inductors and capacitors, minimizing space and

cost in the overall system.

• -40ºC to +125ºC operating temperature range

Applications

• Low-voltage industrial and architectural lighting

• General purpose constant current source

• Signage and decorative LED lighting

• Indicator and emergency lighting

LED brightness control is achieved with PWM dimming

from an analog or PWM input signal. Unique PWM cir-

cuitry allows true constant color with a high dimming

range. The dimming frequency is programmed using a

single external capacitor.

HV9919B comes in a small, 8-Lead DFN package and

is ideal for industrial and general lighting applications.

Package Type

VIN

GATE

GND

VDD

DIM

GND

RAMP

ADIM

8-Lead DFN

See Table 2-1 for pin information

 2015 Microchip Technology Inc.

20005462B-page 1

HV9919B

Block Diagram

REGULATOR

VIN

VDD

GATE

DRIVER

CURRENT

SENSE

COMPARATOR

GATE

DIM

BANDGAP

REF

UVLO

COMPARATOR

GND

PWM RAMP

0.1~1.9V

RAMP

ADIM

HV9919B

Typical Application Circuit

R_SENSE

C_IN

VIN

VDD

GATE

GND

RAMP

ADIM

DIM

0 - 2.0V

HV9919B

20005462B-page 2

 2015 Microchip Technology Inc.

HV9919B

1.0

ELECTRICAL CHARACTERISTICS

ABSOLUTE MAXIMUM RATINGS^†

V_INto GND.................................................................................................................................................-0.3V to +45V

_DDto GND...............................................................................................................................................-0.3V to +6.0V

GATE, RAMP, DIM, ADIM to GND.............................................................................................................-0.3V to +V_DD

CS to V_IN...................................................................................................................................................-1.0V to +0.3V

Continuous total power dissipation (T_A= 25.°C)..................................................................................................... 1.6W

Operating temperature range................................................................................................................ -40°C to +125°C

Junction temperature ...........................................................................................................................................+150°C

Storage temperature range................................................................................................................... -65°C to +150°C

† Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is

a stress rating only and functional operation of the device at those or any other conditions above those indicated in the

operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods

may affect device reliability.

TABLE 1-1:

ELECTRICAL CHARACTERISTICS (SHEET 1 OF 2)

Electrical Specifications: V_IN=12V, V_DIM= V_DD, V_RAMP= GND, C_VDD= 1.0 µF, R_CS= 0.5Ω,

T_A= T_J= -40°C to +125°C, unless otherwise noted. (Note 1)

Parameter

Symbol

Min

Typ

Max

Units Conditions

Input DC supply voltage range

Internally regulated voltage

Supply current

V_IN

V_DD

4.5

5.5

1.5

900

DC input voltage

V_IN= 6.0 to 40V

4.5

I_IN

mA GATE open

Shutdown supply current

I_{IN, SDN}

µA

MHz

DIM< 0.7V

5.5

V_IN= 4.5V, V_DD= 0V

V_IN= 4.5V, V_DD= 4.0V

–

Current limit

I_{IN, LIM}

f_SW

Switching frequency

2.0

V_DDUndervoltage lockout thresh-

old

UVLO

∆UVLO

4.5

V_DDrising

Undervoltage lockout hysteresis

500

mV V_DDfalling

Sense Comparator

Sense voltage threshold high

Sense voltage threshold low

Average sense voltage

V_CS(HI)

V_CS(LO)

V_CS(AVG)

230

170

200

mV (V_IN- V_CS) rising

mV (V_IN- V_CS) falling

186

214

mV V_CS(AVG)= 0.5(V_CS(HI)+ V_CS(LO))

Falling edge of

Propagation delay to output high

t_DPDH

(V_IN- V_CS) = V_RS(LO)- 70mV

Rising edge of

Propagation delay to output low

Current-sense input current

t_DPDL

I_CS

(V_IN- V_CS) = V_RS(HI)+ 70mV

1.0

µA

(V_IN- V_CS) = 200mV

Current-sense threshold hysteresis V_CS(HYS)

mV V_CS(HYS)= V_CS(HI)- V_CS(LO)

DIM Input

Pin DIM input high voltage

Pin DIM input low voltage

V_IH

V_IL

2.2

–

0.7

DIM rising edge to

V_GATE= 0.5 x V_DD, C_GATE= 2.0nF

Turn-on time

Turn-off time

t_ON

100

DIM falling edge to

V_GATE= 0.5 x V_DD, C_GATE=2.0nF

t_OFF

 2015 Microchip Technology Inc.

20005462B-page 3

HV9919B

TABLE 1-1:

ELECTRICAL CHARACTERISTICS (SHEET 2 OF 2)

Electrical Specifications: V_IN=12V, V_DIM= V_DD, V_RAMP= GND, C_VDD= 1.0 µF, R_CS= 0.5Ω,

T_A= T_J= -40°C to +125°C, unless otherwise noted. (Note 1)

Parameter

Symbol

Min

Typ

Max

Units Conditions

GATE Driver

GATE current, source

0.3

0.7

0.5

1.0

V_GATE= GND, (Note 2)

I_GATE

GATE current, sink

V_GATE= V_DD, (Note 2)

C_GATE= 2.0nF

I_GATE= 10mA

GATE output rise time

GATE output fall time

T_RISE

T_FALL

GATE high output voltage

GATE low output voltage

Over-Temperature Protection

Over temperature trip limit

Temperature hysteresis

Analog Control of PWM Dimming

V_GATE(HI)V_DD-0.5

V_GATE(LO)

0.5

I_GATE= -10mA

T_OT

128

140

ºC

(Note 2)

ꢀT_HYST

114

529

308

1380

C_RAMP= 47nF

Dimming frequency

f_RAMP

0.1

C_RAMP= 10nF

RAMP threshold, Low

RAMP threshold, High

ADIM offset voltage

V_LOW

V_HIGH

V_OS

–

1.8

-35

2.1

+35

Note 1: Specification is obtained by characterization and is 100% tested at T_A= 25°C.

2: Specification is obtained by characterization and not 100% tested

TEMPERATURE SPECIFICATIONS

Electrical Specifications: Unless otherwise specified, for all specifications T_A=T_J= +25°C

Parameter

Symbol

Min

Typ

Max Units Conditions

Temperature Ranges

Operating Temperature

Storage Temperature

-40

-65

125

150

°C

–

Package Thermal Resistances

Mounted on FR-4 board,

25 mm x 25 mm x 1.57 mm

Thermal Resistance, DFN

θ_ja

–

°C/W

20005462B-page 4

 2015 Microchip Technology Inc.

HV9919B

2.0

PIN DESCRIPTION

The locations of the pins are listed in Features.

TABLE 2-1:

PIN DESCRIPTION

Pin #

Symbol

Description

Current sense input. Senses LED

string current.

VIN

Input voltage 4.5 to 40V DC.

RAMP

Analog PWM dimming ramp output.

Analog 0~2.0V signal input for analog

control of PWM dimming.

ADIM

DIM

PWM signal input.

Internally regulated supply voltage.

Connect a capacitor from V_DDto

ground.

VDD

GND

GATE

GND

Device ground.

Drives gate of external MOSFET.

Must be wired to pin 7 on PCB.

TAB

 2015 Microchip Technology Inc.

20005462B-page 5

HV9919B

When the analog control of PWM dimming feature is

not used, RAMP must be wired to GND, and ADIM

3.0

APPLICATION INFORMATION

should be connected to V_DD

HV9919B is a step-down, constant current, High-

Brightness LED (HB LED) driver. The device operates

from a 4.5 to 40V input voltage range and provides the

gate drive output to an external N-channel MOSFET.

One possible application of the ADIM feature of

HV9919B may include protection of the LED load from

over-temperature by connecting an NTC thermistor at

ADIM, as shown in Figure 3-1

A high-side, current-sense resistor sets the output cur-

rent and a dedicated PWM Dimming Input (DIM) allows

for a wide range of dimming duty ratios. The PWM dim-

ming could also be achieved by applying a DC voltage

between 0 and 2.0V to the Analog Dimming Input

(ADIM). In this case, the dimming frequency can be

programmed using a single capacitor at the RAMP pin.

VDD

HV9919B

The high-side current setting and sensing scheme min-

imizes the number of external components while deliv-

ering LED current with a ±8% accuracy, using a 1%

sense resistor.

ADIM

NTC

GND

3.1

Undervoltage Lockout (UVLO)

HV9919B includes a 3.7V Under-Voltage lockout

(UVLO) with 500mV hysteresis. When V_DDfalls below

3.7V, GATE goes low, turning off the external N-channel

MOSFET. GATE goes high once V_DDis 4.5V or higher.

FIGURE 3-1:

NTC Thermistor at ADIM

3.5

Setting LED Current with External

Resistor R_SENSE

3.2

5.0V Regulator

The output current in the LED is determined by the

external current sense resistor (R_SENSE) connected

between V_INand CS. Disregarding the effect of the

propagation delays, the sense resistor can be calcu-

lated as:

V_DDis the output of a 5.0V regulator capable of sourc-

ing 5.0 mA. Bypass V_DDto GND with a 1.0μF capacitor.

3.3

DIM Input

V_CSHI+ V_CSLO

200mV

I_LED

HV9919B allows dimming with a PWM signal at the

DIM input. A logic level below 0.7V at DIM forces the

GATE output low, turning off the LED current. To turn

the LED current on, the logic level at DIM must be at

least 2.2V.

-- ----------------------------------------------------

R_SENSE





= ------------------

I_LED

3.6

Selecting Buck Inductor L

HV9919B regulates the LED output current using a

comparator with hysteresis, see Figure 3-2. As the cur-

rent through the inductor ramps up and the voltage

across the sense resistor reaches the upper threshold,

the voltage at GATE goes low, turning off the external

MOSFET. The MOSFET turns on again when the

inductor current ramps down through the freewheeling

diode, until the voltage across the sense resistor

equals the lower threshold. Use the following equation

to determine the inductor value for a desired value of

operating frequency f_S:

3.4

ADIM and RAMP Inputs

The PWM dimming scheme can be also implemented

by applying an analog control signal to ADIM pin. If an

analog control signal of 0 – 2.0V is applied to ADIM, the

device compares this analog input to a voltage ramp to

pulse-width-modulate the LED current. Connecting an

external capacitor to RAMP programs the PWM dim-

ming ramp frequency.

f_PWM= ------------------------------------------

C_RAMP 120K

V_IN– V_OUTV_OUT

L = -------------------------------------------------- – ---------------------------------------------

f_SV_INI_OI_O

V_IN– V_OUTt_DPDL

DIM and ADIM inputs can be used simultaneously. In

such a case, f_PWM(MAX)must be selected lower than

the frequency of the dimming signal at DIM. The

smaller dimming duty cycle of ADIM and DIM will deter-

mine the GATE signal.

V_{OUT DPDH}

------------------------------

I_O

–

20005462B-page 6

 2015 Microchip Technology Inc.

HV9919B

Where:

This ripple can be calculated from the following equa-

tion:

_CSHI– V_CSLO

I_O= ----------------------------------------------

R_SENSE

V_IN– V_OUTt_DPDL

V_OUTt_DPDH

I = I_O+ -------------------------------------------------- + ------------------------------

and t_DPDL, t_DPDHare the propagation delays. The cur-

rent ripple ꢀI in the inductor L is greater than ꢀI_O.

For the purpose of the proper inductor selection, note

that the maximum switching frequency occurs at the

highest V_INand V_OUT= V_IN/2.

T_S= 1/f_S

t_DPDL

I_LED

V_RS(HI)

R_SENSE

V_RS(LO)

R_SENSE

t_DPDH

ΔI_O

ΔI

V_DIM

FIGURE 3-2:

Regulating LED output

3.7

MOSFET Selection

3.10 PCB Layout Guidelines

MOSFET selection is based on the maximum input

operating voltage V_IN, output current I_LED, and operat-

ing switching frequency. Choose a logic-level MOSFET

that has a higher breakdown voltage than the maxi-

mum operation voltage, low R_DS(ON), and low total gate

charge for better efficiency.

Careful PCB layout is critical to achieve low switching

losses and stable operation. Use a multilayer board

whenever possible for better noise immunity. Minimize

ground noise by connecting high-current ground

returns, the input bypass capacitor ground lead, and

the output filter ground lead to a single point (star

ground configuration). The fast di/dt loop is formed by

the input capacitor C_IN, the free-wheeling diode and the

MOSFET. To minimize noise interaction, this loop area

should be as small as possible. Place R_SENSEas close

as possible to the input filter and V_IN. For better noise

immunity, a Kelvin connection is strongly recom-

mended between CS and R_SENSE. Connect the

exposed tab of the IC to a large-area ground plane for

improved power dissipation.

3.8

Freewheeling Diode Selection

The forward voltage of the freewheeling diode should

be as low as possible for better efficiency. A Schottky

diode is a good choice as long as the breakdown volt-

age is high enough to withstand the maximum operat-

ing voltage. The forward-current rating of the diode

must be at least equal to the maximum LED current.

3.9

LED Current Ripple

The LED current ripple is equal to the inductor-current

ripple. In cases when a lower LED current ripple is

needed, a capacitor can be placed across the LED ter-

minals.

 2015 Microchip Technology Inc.

20005462B-page 7

HV9919B

4.0

4.1

PACKAGING INFORMATION

Package Marking Information

8-lead DFN

Example

XXXX

YYWW

NNN

9919

1542

343

Legend: XX...X Product Code or Customer-specific information

Year code (last digit of calendar year)

NNN

Year code (last 2 digits of calendar year)

Week code (week of January 1 is week ‘01’)

Alphanumeric traceability code

Pb-free JEDEC^®designator for Matte Tin (Sn)

This package is Pb-free. The Pb-free JEDEC designator (

can be found on the outer packaging for this package.

)

Note: In the event the full Microchip part number cannot be marked on one line, it will

be carried over to the next line, thus limiting the number of available

characters for product code or customer-specific information. Package may or

not include the corporate logo.

20005462B-page 8

 2015 Microchip Technology Inc.

HV9919B

Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging.

 2015 Microchip Technology Inc.

20005462B-page 9

HV9919B

APPENDIX A: REVISION HISTORY

Revision A (November 2015)

• Updated file to Microchip format.

• Revised Absolute Maximum Ratings^†.

• Modified values and notes in Table 1-1.

• Added condition to Temperature Specifications.

• Changed value in Section 3.2 “5.0V Regulator”.

• Wording change in Section 3.7 “MOSFET Selec-

tion”.

• Minor text changes throughout.

Revision B (December 2015)

• Updated Revision History.

20005462B-page 10

 2015 Microchip Technology Inc.

HV9919B

PRODUCT IDENTIFICATION SYSTEM

To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.

PART NO.

Device

Examples:

HV9919BK7-G

8-Lead DFN package,

3000/Reel

Package Environmental Media

Options Type

Device:

HV9919B = Hysteretic, Buck, High Brightness LED Driver

with High-Side Current Sensing

Package:

= 48-lead DFN

Environmental

Media Type:

= Lead (Pb)-free/ROHS-compliant package

= 3000/Reel

(blank)

 2015 Microchip Technology Inc.

20005462B-page 11

Note the following details of the code protection feature on Microchip devices:

•

Microchip products meet the specification contained in their particular Microchip Data Sheet.

•

Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the

intended manner and under normal conditions.

•

There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our

knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data

Sheets. Most likely, the person doing so is engaged in theft of intellectual property.

•

Microchip is willing to work with the customer who is concerned about the integrity of their code.

Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not

mean that we are guaranteeing the product as “unbreakable.”

Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our

products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts

allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.

Information contained in this publication regarding device

applications and the like is provided only for your convenience

and may be superseded by updates. It is your responsibility to

ensure that your application meets with your specifications.

MICROCHIP MAKES NO REPRESENTATIONS OR

WARRANTIES OF ANY KIND WHETHER EXPRESS OR

IMPLIED, WRITTEN OR ORAL, STATUTORY OR

OTHERWISE, RELATED TO THE INFORMATION,

INCLUDING BUT NOT LIMITED TO ITS CONDITION,

QUALITY, PERFORMANCE, MERCHANTABILITY OR

FITNESS FOR PURPOSE. Microchip disclaims all liability

arising from this information and its use. Use of Microchip

devices in life support and/or safety applications is entirely at

the buyer’s risk, and the buyer agrees to defend, indemnify and

hold harmless Microchip from any and all damages, claims,

suits, or expenses resulting from such use. No licenses are

conveyed, implicitly or otherwise, under any Microchip

intellectual property rights unless otherwise stated.

Trademarks

The Microchip name and logo, the Microchip logo, dsPIC,

FlashFlex, flexPWR, JukeBlox, KEELOQ, KEELOQ logo, Kleer,

LANCheck, MediaLB, MOST, MOST logo, MPLAB,

OptoLyzer, PIC, PICSTART, PIC³²logo, RightTouch, SpyNIC,

SST, SST Logo, SuperFlash and UNI/O are registered

trademarks of Microchip Technology Incorporated in the

U.S.A. and other countries.

The Embedded Control Solutions Company and mTouch are

registered trademarks of Microchip Technology Incorporated

in the U.S.A.

Analog-for-the-Digital Age, BodyCom, chipKIT, chipKIT logo,

CodeGuard, dsPICDEM, dsPICDEM.net, ECAN, In-Circuit

Serial Programming, ICSP, Inter-Chip Connectivity, KleerNet,

KleerNet logo, MiWi, motorBench, MPASM, MPF, MPLAB

Certified logo, MPLIB, MPLINK, MultiTRAK, NetDetach,

Omniscient Code Generation, PICDEM, PICDEM.net, PICkit,

PICtail, RightTouch logo, REAL ICE, SQI, Serial Quad I/O,

Total Endurance, TSHARC, USBCheck, VariSense,

ViewSpan, WiperLock, Wireless DNA, and ZENA are

trademarks of Microchip Technology Incorporated in the

U.S.A. and other countries.

SQTP is a service mark of Microchip Technology Incorporated

in the U.S.A.

Silicon Storage Technology is a registered trademark of

Microchip Technology Inc. in other countries.

GestIC is a registered trademark of Microchip Technology

Germany II GmbH & Co. KG, a subsidiary of Microchip

Technology Inc., in other countries.

All other trademarks mentioned herein are property of their

respective companies.

ISBN: 978-1-5224-0111-7

QUALITYꢀMANAGEMENTꢀꢀSYSTEMꢀ

CERTIFIEDꢀBYꢀDNVꢀ

Microchip received ISO/TS-16949:2009 certification for its worldwide

headquarters, design and wafer fabrication facilities in Chandler and

Tempe, Arizona; Gresham, Oregon and design centers in California

and India. The Company’s quality system processes and procedures

are for its PIC^®MCUs and dsPIC^®DSCs, KEELOQ^®code hopping

devices, Serial EEPROMs, microperipherals, nonvolatile memory and

analog products. In addition, Microchip’s quality system for the design

and manufacture of development systems is ISO 9001:2000 certified.

== ISO/TSꢀ16949ꢀ==ꢀ

20005462B-page 12

 2015 Microchip Technology Inc.

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Japan - Tokyo

Tel: 81-3-6880- 3770

Fax: 81-3-6880-3771

China - Dongguan

Tel: 86-769-8702-9880

Italy - Venice

Tel: 39-049-7625286

Chicago

Itasca, IL

Tel: 630-285-0071

Fax: 630-285-0075

Korea - Daegu

Tel: 82-53-744-4301

Fax: 82-53-744-4302

China - Hangzhou

Tel: 86-571-8792-8115

Fax: 86-571-8792-8116

Netherlands - Drunen

Tel: 31-416-690399

Fax: 31-416-690340

Korea - Seoul

Cleveland

Tel: 82-2-554-7200

Fax: 82-2-558-5932 or

82-2-558-5934

China - Hong Kong SAR

Tel: 852-2943-5100

Fax: 852-2401-3431

Poland - Warsaw

Tel: 48-22-3325737

Independence, OH

Tel: 216-447-0464

Fax: 216-447-0643

Spain - Madrid

Tel: 34-91-708-08-90

Fax: 34-91-708-08-91

China - Nanjing

Tel: 86-25-8473-2460

Fax: 86-25-8473-2470

Malaysia - Kuala Lumpur

Tel: 60-3-6201-9857

Fax: 60-3-6201-9859

Dallas

Addison, TX

Tel: 972-818-7423

Fax: 972-818-2924

Sweden - Stockholm

Tel: 46-8-5090-4654

China - Qingdao

Tel: 86-532-8502-7355

Fax: 86-532-8502-7205

Malaysia - Penang

Tel: 60-4-227-8870

Fax: 60-4-227-4068

Detroit

Novi, MI

UK - Wokingham

Tel: 44-118-921-5800

China - Shanghai

Tel: 86-21-5407-5533

Fax: 86-21-5407-5066

Philippines - Manila

Tel: 63-2-634-9065

Fax: 63-2-634-9069

Tel: 248-848-4000

Fax: 44-118-921-5820

Houston, TX

Tel: 281-894-5983

China - Shenyang

Tel: 86-24-2334-2829

Fax: 86-24-2334-2393

Singapore

Tel: 65-6334-8870

Fax: 65-6334-8850

Indianapolis

Noblesville, IN

Tel: 317-773-8323

Fax: 317-773-5453

China - Shenzhen

Tel: 86-755-8864-2200

Fax: 86-755-8203-1760

Taiwan - Hsin Chu

Tel: 886-3-5778-366

Fax: 886-3-5770-955

Los Angeles

Mission Viejo, CA

Tel: 949-462-9523

Fax: 949-462-9608

China - Wuhan

Tel: 86-27-5980-5300

Fax: 86-27-5980-5118

Taiwan - Kaohsiung

Tel: 886-7-213-7828

Taiwan - Taipei

Tel: 886-2-2508-8600

Fax: 886-2-2508-0102

New York, NY

Tel: 631-435-6000

China - Xian

Tel: 86-29-8833-7252

Fax: 86-29-8833-7256

San Jose, CA

Tel: 408-735-9110

Thailand - Bangkok

Tel: 66-2-694-1351

Fax: 66-2-694-1350

Canada - Toronto

Tel: 905-673-0699

Fax: 905-673-6509

07/14/15

20005462B-page 13

 2015 Microchip Technology Inc.

HV9919BK7-G CAD模型

引脚图

封装焊盘图

HV9919BK7-G 替代型号

型号	制造商	描述	替代类型	文档
HV9919K7-G	SUPERTEX	LED Driver, 1-Segment, PDSO8, 3 X 3 MM, 0.80 MM HEIGHT, 0.65 MM PITCH, GREEN, MO-229WEEC-2	功能相似

HV9919BK7-G 相关器件

型号	制造商	描述	价格	文档
HV9919K7-G	SUPERTEX	LED Driver, 1-Segment, PDSO8, 3 X 3 MM, 0.80 MM HEIGHT, 0.65 MM PITCH, GREEN, MO-229WEEC-2, DFN-8	获取价格
HV9921	SUPERTEX	3-Pin Switch-Mode LED Lamp Driver IC	获取价格
HV9921	MICROCHIP	The HV9921 is a pulse width modulated (PWM) high-efficiency LED driver control IC. It allows effic	获取价格
HV9921N3	SUPERTEX	3-Pin Switch-Mode LED Lamp Driver IC	获取价格
HV9921N3-G	SUPERTEX	3-Pin Switch-Mode LED Lamp Driver ICs	获取价格
HV9921N8	SUPERTEX	3-Pin Switch-Mode LED Lamp Driver IC	获取价格
HV9921N8-G	SUPERTEX	3-Pin Switch-Mode LED Lamp Driver ICs	获取价格
HV9922	SUPERTEX	3-Pin Switch-Mode LED Lamp Driver IC	获取价格
HV9922	MICROCHIP	The HV9922 is a pulse width modulated (PWM) high-efficiency LED driver control IC. It allows effic	获取价格
HV9922N3	SUPERTEX	3-Pin Switch-Mode LED Lamp Driver IC	获取价格