DN1509N8-G [MICROCHIP]
N-Channel, Depletion-Mode, Vertical DMOS FET;
| 型号： | DN1509N8-G |
| 厂家： | 
MICROCHIP |
| 描述： | N-Channel, Depletion-Mode, Vertical DMOS FET |
| 文件： | 总12页 (文件大小：394K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DN1509
N-Channel, Depletion-Mode, Vertical DMOS FET
Features
Description
• High-input impedance
This low threshold, depletion-mode, normally-on, tran-
sistor utilizes an advanced vertical Diffusion Metal
Oxide Semiconductor (DMOS) structure and a well
proven silicon-gate manufacturing process. This com-
bination produces a device with the power-handling
capabilities of bipolar transistors, plus the high-input
impedance and positive-temperature coefficient inher-
ent in Metal-Oxide Semiconductor (MOS) devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally-induced second-
ary breakdown.
• Low-input capacitance
• Fast switching speeds
• Low on-resistance
• Free from secondary breakdown
• Low input and output leakages
Applications
• Normally-on switches
• Battery operated systems
• Converters
Vertical DMOS Field-Effect Transistors (FETs) are ide-
ally suited to a wide range of switching and amplifying
applications where a very low threshold voltage, high
breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
• Linear amplifiers
• Constant current sources
• Telecom
2015 Microchip Technology Inc.
DS20005403B-page 1
DN1509
Package Type
SOURCE
DRAIN
GATE
SOURCE
DRAIN
GATE
N/C
DRAIN
N/C
5-lead SOT-23
TO-243AA (SOT-89)
See Table 2-1 for pin information
DS20005403B-page 2
2015 Microchip Technology Inc.
DN1509
1.0
ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS†
Drain-to-source voltage................................................................................................................................................................ BVDSX
Drain-to-gate voltage....................................................................................................................................................................BVDGX
Gate-to-source voltage................................................................................................................................................................... ±20V
Operating and storage temperature............................................................................................................................. -55°C to +150°C
† Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at those or any other conditions above those indicated in the
operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods
may affect device reliability.
1.1
Electrical Specifications
TABLE 1-1:
DC AND AC CHARACTERISTICS
Electrical Specifications: Unless otherwise specified, for all specifications TA =TJ = +25°C
Symbol
Parameter
Min
Typ
Max Units Conditions
DC Parameters (Note 1, unless otherwise stated)
BVDSX
Drain-to-source breakdown voltage
Gate-to-source off voltage
90
-1.8
–
–
–
–
–
–
–
V
V
VGS = -5V, ID = 1.0µA
ID = 10µA
VGS(OFF)
-3.5
∆VGS(OFF) VGS(OFF) change with temperature
-4.5 mV/°C VDS = 15V, ID= 10µA (Note 2)
IGSS
Gate body leakage
–
100
1.0
nA
µA
VGS = ±20V, VDS = 0V
DS = BVDSX, VGS = -5.0V
VDS = 0.8 BVDSX
VGS = -5.0V, TA= 125°C (Note 2)
–
V
ID(OFF)
Drain-to-source leakage current
Saturated drain-to-source current
,
–
300
–
–
540
3.2
–
1.0
–
mA
IDSS
mA VGS = 0V, VDS = 25V
Static drain-to-source on-state
resistance
RDS(ON)
∆RDS(ON)
6.0
1.1
Ω
VGS = 0V, ID= 200mA
Change in RDS(ON) with temperature
–
%/°C VGS = 0V, ID= 200mA (Note 2)
AC Parameters (Note 2)
GFS
CISS
COSS
CRSS
td(ON)
tr
Forward transconductance
200
–
–
150
40
15
30
45
45
60
mmho VDS = 10V, ID= 200mA
Input capacitance
70
20
6.0
12
16
15
25
VGS = -10V, VDS = 25V,
f = 1MHz
Common source output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
–
–
–
–
–
–
pF
V
DD = 25V,
ID = 100mA,
GEN = 25ꢀ
ns
td(OFF)
tf
Turn-off delay time
Fall time
R
Diode Parameters
VSD Diode forward voltage drop
trr Reverse recovery time
V
GS = -5.0V, ISD= 500mA
–
–
–
1.8
–
V
(Note 1)
VGS = -5.0V, ISD= 500mA
(Note 2)
400
ns
Note 1: All DC parameters are 100% tested at 25°C unless otherwise stated. Pulse test: 300 µs pulse, 2% duty cycle.
2: Specification is obtained by characterization and is not 100% tested.
2015 Microchip Technology Inc.
DS20005403B-page 3
DN1509
TABLE 1-2:
TYPICAL THERMAL RESISTANCE
Package
θja
5-lead SOT-23
253°C/W
78°C/W1
TO-243AA (SOT-89)
1. Mounted on FR4 board, 25mm x 25mm x 1.57 mm
TABLE 1-3:
THERMAL CHARACTERISTICS
1
ID
ID
pulsed
(mA)
Power
Dissipation
@TA = 2.5°C (W)
1
IDR
IDRM
(mA)
Package
continuous
(mA)
(mA)
5-lead SOT-23
200
360
500
500
0.49
1.62
200
360
500
500
TO-243AA (SOT-89)
1. ID continuous is limited by max rated TJ
2. Mounted on FR4 board, 25mm x 25mm x 1.57 mm
2.0
PIN DESCRIPTION
The locations of the pins are listed in Package Type.
TABLE 2-1:
PIN DESCRIPTION
Pin # SOT-23
Pin # TO-243AA
Function
5
2
1
2
3
GATE
DRAIN
SOURCE
NC
4
1,3
DS20005403B-page 4
2015 Microchip Technology Inc.
DN1509
3.0
APPLICATION INFORMATION
Figure 3-1 shows the switching waveform and test cir-
cuit for DN1509.
0V
VDD
90%
INPUT
Pulse
RL
10%
Generator
-10V
OUTPUT
t(ON)
td(ON)
t(OFF)
td(OFF)
RGEN
tf
tr
VDD
OUTPUT
0V
INPUT
D.U.T.
10%
10%
90%
90%
FIGURE 3-1:
Switching Waveforms and Test Circuit
Product Summary
BVDSX/BVDGX
(V)
RDS(ON)
(max) (ꢀ)
IDSS
(min) (mA)
90
6.0
300
2015 Microchip Technology Inc.
DS20005403B-page 5
DN1509
4.0
4.1
PACKAGING INFORMATION
Package Marking Information
Example
Example
3-lead TO-243AA *
(SOT-89)
5-lead SOT-23 *
XXXYYWW
DN5A517
XXXXY
WWNNN
N5A5
17343
NNN
343
Legend: XX...X Product Code or Customer-specific information
Y
Year code (last digit of calendar year)
YY
WW
NNN
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC® designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator (
can be found on the outer packaging for this package.
e
3
*
)
e
3
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for product code or customer-specific information. Package may or
not include the corporate logo.
DS20005403B-page 6
2015 Microchip Technology Inc.
DN1509
3-Lead TO-243AA (SOT-89) Package Outline (N8)
D
D1
C
H
E
E1
1
2
3
L
b
b1
A
e
e1
Top View
Side View
Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging.
Symbol
A
1.40
-
b
0.44
-
b1
0.36
-
C
0.35
-
D
4.40
-
D1
1.62
-
E
2.29
-
E1
2.00†
-
e
e1
H
3.94
-
L
0.73†
-
MIN
NOM
MAX
Dimensions
(mm)
1.50
BSC
3.00
BSC
1.60
0.56
0.48
0.44
4.60
1.83
2.60
2.29
4.25
1.20
JEDEC Registration TO-243, Variation AA, Issue C, July 1986.
† This dimension differs from the JEDEC drawing
Drawings not to scale.
2015 Microchip Technology Inc.
DS20005403B-page 7
DN1509
5-Lead SOT-23 Package Outline (K1)
2.90x1.60mm body, 1.45mm height (max), 0.95mm pitch
D
θ1
e1
5
E1
E
Gauge
Plane
Note 1
(Index Area
D/2 x E1/2)
L2
θ
1
L
e
Seating
Plane
b
L1
Top View
View B
View B
A
A
A2
A1
Seating
Plane
A
View A - A
Side View
Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging.
Note:
1. $ꢁ3LQꢁꢃꢁLGHQWL¿HUꢁPXVWꢁEHꢁORFDWHGꢁLQꢁWKHꢁLQGH[ꢁDUHDꢁLQGLFDWHGꢂꢁ7KHꢁ3LQꢁꢃꢁLGHQWL¿HUꢁFDQꢁEHꢄꢁDꢁPROGHGꢁPDUNꢅLGHQWL¿HUꢆꢁDQꢁHPEHGGHGꢁPHWDOꢁPDUNHUꢆꢁRUꢁ
a printed indicator.
Symbol
A
A1
MIN 0.90* 0.00 0.90 0.30 2.75* 2.60* 1.45*
NOM 1.15 2.90 2.80 1.60
MAX 1.45 0.15 1.30 0.50 3.05* 3.00* 1.75*
A2
b
D
E
E1
e
e1
L
L1
L2
ș
șꢀ
5O
10O
15O
0.30
0.45
0.60
0O
4O
8O
Dimension
(mm)
0.95 1.90
BSC BSC
0.60 0.25
REF BSC
-
-
-
JEDEC Registration MO-178, Variation AA, Issue C, Feb. 2000.
ꢀꢁ7KLVꢁGLPHQVLRQꢁLVꢁQRWꢁVSHFL¿HGꢁLQꢁWKHꢁ-('(&ꢁGUDZLQJꢂ
Drawings not to scale.
DS20005403B-page 8
2015 Microchip Technology Inc.
DN1509
APPENDIX A: REVISION HISTORY
Revision A (June 2015)
• Update file to new format
Revision B (August 2015)
• Minor fix to Table 1-1
2015 Microchip Technology Inc.
DS20005403B-page 9
DN1509
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
-
-
PART NO.
Device
XX
X
X
Examples:
a)
DN1509K1-G
SOT-23 package,
3000/reel
TO-243AA package,
2000/reel
Package Environmental Media
Options Type
b)
DN1509N8-G
Device:
DN1509 = N-Channel, Depletion-Mode,
vertical DMOS FET
Package:
K1
N8
= SOT-23, 5-lead
= TO-243AA (SOT-89), 3-lead
Environmental
Media Type:
G
= Lead (Pb)-free/ROHS-compliant package
(blank) = 3000/Reel for K1 packages
= 2000/Reel for N8 packages
DS20005403B-page 10
2015 Microchip Technology Inc.
DN1509
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
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Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
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mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
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Information contained in this publication regarding device
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trademarks of Microchip Technology Incorporated in the
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The Embedded Control Solutions Company and mTouch are
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Analog-for-the-Digital Age, BodyCom, chipKIT, chipKIT logo,
CodeGuard, dsPICDEM, dsPICDEM.net, ECAN, In-Circuit
Serial Programming, ICSP, Inter-Chip Connectivity, KleerNet,
KleerNet logo, MiWi, MPASM, MPF, MPLAB Certified logo,
MPLIB, MPLINK, MultiTRAK, NetDetach, Omniscient Code
Generation, PICDEM, PICDEM.net, PICkit, PICtail,
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SQTP is a service mark of Microchip Technology Incorporated
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All other trademarks mentioned herein are property of their
respective companies.
© 2015, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
ISBN: 978-1-63277-700-3
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2015 Microchip Technology Inc.
DS20005403B-page 11
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