23K256T-E/ST_技术文档

23A256/23K256

256K SPI Bus Low-Power Serial SRAM

Device Selection Table

Part Number

VCC Range

Page Size

Temp. Ranges

Packages

23K256

23A256

2.7-3.6V

32 Byte

I, E

I

P, SN, ST

1.5-1.95V

Features:

Description:

• Max. Clock 20 MHz

The Microchip Technology Inc. 23X256 are 256 Kbit

Serial SRAM devices. The memory is accessed via a

simple Serial Peripheral Interface (SPI) compatible

serial bus. The bus signals required are a clock input

(SCK) plus separate data in (SI) and data out (SO)

lines. Access to the device is controlled through a Chip

Select (CS) input.

• Low-Power CMOS Technology:

- Read Current: 3 mA at 1 MHz

- Standby Current: 4 A Max. at +85°C

• 32,768 x 8-bit Organization

• 32-Byte Page

• HOLD pin

Communication to the device can be paused via the

hold pin (HOLD). While the device is paused,

transitions on its inputs will be ignored, with the

exception of Chip Select, allowing the host to service

higher priority interrupts.

• Flexible Operating modes:

- Byte read and write

- Page mode (32 Byte Page)

- Sequential mode

The 23X256 is available in standard packages

including 8-lead PDIP and SOIC, and advanced

packaging including 8-lead TSSOP.

• Sequential Read/Write

• High Reliability

• Temperature Ranges Supported:

- Industrial (I):

-40C to +85C

-40C to +125C

Package Types (not to scale)

- Automotive (E):

• Pb-Free and RoHS Compliant, Halogen Free

Pin Function Table

Name

Function

PDIP/SOIC/TSSOP

(P, SN, ST)

CS

SO

VSS

SI

Chip Select Input

Serial Data Output

Ground

CS

SO

VCC

1

2

8

7

Serial Data Input

Serial Clock Input

Hold Input

HOLD

SCK

SI

SCK

HOLD

VCC

3

4

6

5

NC

V

SS

Supply Voltage

 2010 Microchip Technology Inc.

DS22100E-page 1

23X256

1.0

ELECTRICAL CHARACTERISTICS

(†)

Absolute Maximum Ratings

VCC.............................................................................................................................................................................4.5V

All inputs and outputs w.r.t. VSS ......................................................................................................... -0.3V to VCC +0.3V

Storage temperature .................................................................................................................................-65°C to 150°C

Ambient temperature under bias...............................................................................................................-40°C to 125°C

ESD protection on all pins...........................................................................................................................................2kV

† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the

device. This is a stress rating only and functional operation of the device at those or any other conditions above those

indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an

extended period of time may affect device reliability.

TABLE 1-1:

DC CHARACTERISTICS

Industrial (I):

Automotive (E): TA = -40°C to +125°C

TA = -40°C to +85°C

DC CHARACTERISTICS

Param.

No.

Sym.

Characteristic

Min.

Typ⁽¹⁾

Max. Units

Test Conditions

D001

D002

VCC

Supply voltage

1.5

2.7

—

1.95

3.6

V

23A256 (I-Temp)

VCC

VIH

23K256 (I,E-Temp)

High-level input

voltage

.7 VCC

VCC

+0.3

D003

D004

D005

D006

D007

D008

VIL

Low-level input

voltage

-0.3

—

0.2xVCC

V

VOL

Low-level output

voltage

0.2

IOL = 1 mA

VOH

ILI

High-level output

voltage

VCC -0.5

—

V

IOH = -400 A

Input leakage

current

±0.5

A

CS = VCC, VIN = VSS OR VCC

CS = VCC, VOUT = VSS OR VCC

ILO

Output leakage

current

—

ICC Read

—

3

6

10

mA FCLK = 1 MHz; SO = O

mA FCLK = 10 MHz; SO = O

mA FCLK = 20 MHz; SO = O

Operating current

Standby current

D009

ICCS

—

0.2

1

A CS = VCC = 1.8V, Inputs tied to VCC

or VSS

A CS = VCC = 3.6V, Inputs tied to VCC

or VSS

A CS = VCC = 3.6V, Inputs tied to VCC

or VSS @ 125°C

1

4

5

10

D010

D011

CINT

VDR

Input capacitance

7

pF VCC = 0V, f = 1 MHz, Ta = 25°C

(Note 1)

RAM data retention

voltage ⁽²⁾

—

1.2

—

V

Note 1: This parameter is periodically sampled and not 100% tested. Typical measurements taken at room

temperature (25°C).

2: This is the limit to which VDD can be lowered without losing RAM data. This parameter is periodically

sampled and not 100% tested.

DS22100E-page 2

 2010 Microchip Technology Inc.

23X256

TABLE 1-2:

AC CHARACTERISTICS

Industrial (I):

Automotive (E): TA = -40°C to +125°C

TA = -40°C to +85°C

AC CHARACTERISTICS

Param.

Sym.

Characteristic

Min.

Max.

Units

Test Conditions

No.

1

2

3

4

5

6

FCLK Clock frequency

—

10

16

20

MHz VCC 1.5V (I-Temp)

MHz VCC 1.8V (I-Temp)

MHz VCC 3.0V (E-Temp)

MHz VCC 3.0V (I-Temp)

VCC 1.5V (I-Temp)

VCC 1.8V (I-Temp)

VCC 3.0V (E-Temp)

VCC 3.0V (I-Temp)

TCSS CS setup time

TCSH CS hold time

TCSD CS disable time

50

32

25

—

ns

VCC 1.5V (I-Temp)

VCC 1.8V (I-Temp)

VCC 3.0V (E-Temp)

VCC 3.0V (I-Temp)

50

—

ns

VCC 1.5V (I-Temp)

VCC 1.8V (I-Temp)

VCC 3.0V (E-Temp)

VCC 3.0V (I-Temp)

50

32

25

—

ns

Tsu

Data setup time

Data hold time

10

—

ns

VCC 1.5V (I-Temp)

VCC 1.8V (I-Temp)

VCC 3.0V (E-Temp)

VCC 3.0V (I-Temp)

THD

10

—

ns

VCC 1.5V (I-Temp)

VCC 1.8V (I-Temp)

VCC 3.0V (E-Temp)

VCC 3.0V (I-Temp)

7

8

9

TR

TF

CLK rise time

CLK fall time

Clock high time

—

2

us

Note 1

THI

VCC 1.5V (I-Temp)

VCC 1.8V (I-Temp)

VCC 3.0V (E-Temp)

VCC 3.0V (I-Temp)

50

32

25

—

ns

10

11

12

13

TLO

Clock low time

VCC 1.5V (I-Temp)

VCC 1.8V (I-Temp)

VCC 3.0V (E-Temp)

VCC 3.0V (I-Temp)

50

32

25

—

ns

TCLD Clock delay time

VCC 1.5V (I-Temp)

VCC 1.8V (I-Temp)

VCC 3.0V (E-Temp)

VCC 3.0V (I-Temp)

50

32

25

—

ns

TV

Output valid from clock low

VCC 1.5V (I-Temp)

VCC 1.8V (I-Temp)

VCC 3.0V (E-Temp)

VCC 3.0V (I-Temp)

—

50

32

25

ns

THO

Output hold time

0

—

ns

Note 1

Note 1: This parameter is periodically sampled and not 100% tested.

 2010 Microchip Technology Inc.

DS22100E-page 3

23X256

TABLE 1-2:

AC CHARACTERISTICS (CONTINUED)

Industrial (I):

Automotive (E): TA = -40°C to +125°C

TA = -40°C to +85°C

AC CHARACTERISTICS

Param.

Sym.

Characteristic

Min.

Max.

Units

Test Conditions

VCC 1.5V (I-Temp)

No.

14

TDIS

Output disable time

—

20

ns

VCC 1.8V (I-Temp)

VCC 3.0V (E-Temp)

VCC 3.0V (I-Temp)

15

16

17

18

THS

THH

THZ

THV

HOLD setup time

10

—

50

ns

—

HOLD hold time

HOLD low to output High-Z

HOLD high to output valid

Note 1: This parameter is periodically sampled and not 100% tested.

TABLE 1-3:

AC TEST CONDITIONS

AC Waveform:

Input pulse level

Input rise/fall time

0.1 VCC to 0.9 VCC

5 ns

-40°C to +125°C

—

Operating temperature

CL = 100 pF

Timing Measurement Reference Level:

Input

0.5 VCC

Output

DS22100E-page 4

 2010 Microchip Technology Inc.

23X256

FIGURE 1-1: HOLD TIMING

CS

16

15

SCK

17

High-Impedance

Don’t Care

n

SO

n + 2

n + 1

n

n - 1

5

n

n + 1

n

n - 1

SI

HOLD

FIGURE 1-2: SERIAL INPUT TIMING

4

CS

2

11

7

3

8

SCK

5

6

SI

MSB in

LSB in

High-Impedance

SO

FIGURE 1-3: SERIAL OUTPUT TIMING

CS

3

9

10

SCK

12

14

LSB out

13

MSB out

SO

SI

Don’t Care

 2010 Microchip Technology Inc.

DS22100E-page 5

23X256

2.3

Read Sequence

2.0

2.1

FUNCTIONAL DESCRIPTION

The device is selected by pulling CS low. The 8-bit

READinstruction is transmitted to the 23X256 followed

by the 16-bit address, with the first MSB of the address

being a “don’t care” bit. After the correct READ

instruction and address are sent, the data stored in the

memory at the selected address is shifted out on the

SO pin.

Principles of Operation

The 23X256 is a 32,768-byte Serial SRAM designed to

interface directly with the Serial Peripheral Interface

(SPI) port of many of today’s popular microcontroller

families, including Microchip’s PIC^®microcontrollers. It

may also interface with microcontrollers that do not

have a built-in SPI port by using discrete I/O lines

programmed properly in firmware to match the SPI

protocol.

If operating in Page mode, after the first byte of data is

shifted out, the next memory location on the page can

be read out by continuing to provide clock pulses. This

allows for 32 consecutive address reads. After the

32nd address read the internal address counter wraps

back to the byte 0 address in that page.

The 23X256 contains an 8-bit instruction register. The

device is accessed via the SI pin, with data being

clocked in on the rising edge of SCK. The CS pin must

be low and the HOLD pin must be high for the entire

operation.

If operating in Sequential mode, the data stored in the

memory at the next address can be read sequentially

by continuing to provide clock pulses. The internal

Address Pointer is automatically incremented to the

next higher address after each byte of data is shifted

out. When the highest address is reached (7FFFh),

the address counter rolls over to address 0000h,

allowing the read cycle to be continued indefinitely.

The read operation is terminated by raising the CS pin

(Figure 2-1).

Table 2-1 contains a list of the possible instruction

bytes and format for device operation. All instructions,

addresses and data are transferred MSB first, LSB last.

Data (SI) is sampled on the first rising edge of SCK

after CS goes low. If the clock line is shared with other

peripheral devices on the SPI bus, the user can assert

the HOLD input and place the 23X256 in ‘HOLD’ mode.

After releasing the HOLD pin, operation will resume

from the point when the HOLD was asserted.

2.4

Write Sequence

Prior to any attempt to write data to the 23X256, the

device must be selected by bringing CS low.

2.2

Modes of Operation

The 23A256/23K256 has three modes of operation that

are selected by setting bits 7 and 6 in the STATUS

register. The modes of operation are Byte, Page and

Burst.

Once the device is selected, the Write command can

be started by issuing a WRITE instruction, followed by

the 16-bit address, with the first MSB of the address

being a “don’t care” bit, and then the data to be written.

A write is terminated by the CS being brought high.

Byte Operation – is selected when bits 7 and 6 in the

STATUS register are set to 00. In this mode, the read/

write operations are limited to only one byte. The

Command followed by the 16-bit address is clocked into

the device and the data to/from the device is transferred

on the next 8 clocks (Figure 2-1, Figure 2-2).

If operating in Page mode, after the initial data byte is

shifted in, additional bytes can be shifted into the

device. The Address Pointer is automatically

incremented. This operation can continue for the entire

page (32 Bytes) before data will start to be overwritten.

Page Operation – is selected when bits 7 and 6 in the

STATUS register are set to 10. The 23A256/23K256 has

1024 pages of 32 Bytes. In this mode, the read and write

operations are limited to within the addressed page (the

address is automatically incremented internally). If the

data being read or written reaches the page boundary,

then the internal address counter will increment to the

start of the page (Figure 2-3, Figure 2-4).

If operating in Sequential mode, after the initial data

byte is shifted in, additional bytes can be clocked into

the device. The internal Address Pointer is automati-

cally incremented. When the Address Pointer reaches

the highest address (7FFFh), the address counter rolls

over to (0000h). This allows the operation to continue

indefinitely, however, previous data will be overwritten.

Sequential Operation – is selected when bits 7 and 6

in the STATUS register are set to 01. Sequential opera-

tion allows the entire array to be written to and read

from. The internal address counter is automatically

incremented and page boundaries are ignored. When

the internal address counter reaches the end of the

array, the address counter will roll over to 0x0000

(Figure 2-5, Figure 2-6).

DS22100E-page 6

 2010 Microchip Technology Inc.

23X256

TABLE 2-1:

INSTRUCTION SET

Instruction Name

READ

Instruction Format

Description

Read data from memory array beginning at selected address

Write data to memory array beginning at selected address

Read STATUS register

0000 0011

0000 0010

0000 0101

0000 0001

WRITE

RDSR

WRSR

Write STATUS register

FIGURE 2-1: BYTE READ SEQUENCE

CS

0

1

2

3

4

5

6

7

8

9 10 11

21 22 23 24 25 26 27 28 29 30 31

SCK

SI

Instruction

16-bit Address

1 15 14 13 12

0

1

2

1

0

Data Out

High-Impedance

7

6

5

4

3

2

1

0

SO

FIGURE 2-2: BYTE WRITE SEQUENCE

CS

0

1

2

3

4

5

6

7

8

9 10 11

21 22 23 24 25 26 27 28 29 30 31

Data Byte

SCK

SI

Instruction

16-bit Address

15 14 13 12

0

1

0

2

1

0

7

6

5

4

3

2

1

0

High-Impedance

SO

 2010 Microchip Technology Inc.

DS22100E-page 7

23X256

FIGURE 2-3: PAGE READ SEQUENCE

CS

0

1

2

3

4

5

6

7

8

9 10 11

21 22 23 24 25 26 27 28 29 30 31

SCK

SI

Instruction

16-bit Address

1 15 14 13 12

Page X, Word Y

0

1

2

1

0

Page X, Word Y

High Impedance

SO

7

6

5

4

3

2

1

0

CS

32 33 34 35 36 37 38 39

SCK

SI

Page X, Word Y+1

Page X, Word 31

Page X, Word 0

7

6

5

4

3

2

1

0

7

6

5

4

3

2

1

0

7

6

5

4

3

2

1

0

SO

FIGURE 2-4:

PAGE WRITE SEQUENCE

CS

0

1

2

3

4

5

6

7

8

9 10 11

21 22 23 24 25 26 27 28 29 30 31

Page X, Word Y

SCK

Instruction

16-bit Address

0 15 14 13 12

Page X, Word Y

0

1

2

1

0

7

6

5

4

3

2

1

0

SI

CS

SCK

SI

32 33 34 35 36 37 38 39

Page X, Word Y+1

Page X, Word 31

Page X, Word 0

7

6

5

4

3

2

1

0

7

6

5

4

3

2

1

0

7

6

5

4

3

2

1

0

DS22100E-page 8

 2010 Microchip Technology Inc.

23X256

FIGURE 2-5:

SEQUENTIAL READ SEQUENCE

CS

0

1

2

3

4

5

6

7

8

9 10 11

21 22 23 24 25 26 27 28 29 30 31

SCK

Instruction

16-bit Address

15 14 13 12

0

1

2

1

0

SI

Page X, Word Y

7

6

5

4

3

2

1

0

SO

CS

SCK

SI

Page X, Word 31

Page X+1, Word 0

Page X+1, Word 1

7

6

5

4

3

2

1

0

7

6

5

4

3

2

1

0

7

6

5

4

3

2

1

0

SO

CS

SCK

SI

Page X+1, Word 31

Page X+n, Word 1

Page X+n, Word 31

7

6

5

4

3

2

1

0

7

6

5

4

3

2

1

0

7

6

5

4

3

2

1

0

SO

 2010 Microchip Technology Inc.

DS22100E-page 9

23X256

FIGURE 2-6:

SEQUENTIAL WRITE SEQUENCE

CS

0

1

2

3

4

5

6

7

8

9 10 11

21 22 23 24 25 26 27 28 29 30 31

Data Byte 1

SCK

SI

Instruction

16-bit Address

0 15 14 13 12

0

1

2

1

0

7

6

5

4

3

2

1

0

CS

32 33 34 35 36 37 38 39

Data Byte 2

41 42 43 44 45 46 47

Data Byte 3

40

7

SCK

SI

Data Byte n

7

6

5

4

3

2

1

0

6

5

4

3

2

1

0

7

6

5

4

3

2

1

0

DS22100E-page 10

 2010 Microchip Technology Inc.

23X256

The mode bits indicate the operating mode of the

SRAM. The possible modes of operation are:

2.5

Read Status Register Instruction

(RDSR)

0 0= Byte mode (default operation)

1 0= Page mode

The Read Status Register instruction (RDSR) provides

access to the STATUS register. The STATUS register

may be read at any time. The STATUS register is

formatted as follows:

0 1= Sequential mode

1 1= Reserved

Write and read commands are shown in Figure 2-7 and

Figure 2-8.

TABLE 2-2:

STATUS REGISTER

7

6

5

–

0

4

–

0

3

–

0

2

–

0

1

–

0

The HOLD bit enables the Hold pin functionality. It must

be set to a ‘0’ before HOLD pin is brought low for HOLD

function to work properly. Setting HOLD to ‘1’ disables

feature.

W/R

HOLD

MODE MODE

W/R = writable/readable.

Bits 1 through 5 are reserved and should always be set

to ‘0’.

See Figure 2-7 for the RDSRtiming sequence.

FIGURE 2-7: READ STATUS REGISTER TIMING SEQUENCE (RDSR)

CS

0

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

SCK

SI

Instruction

0

1

0

1

Data from STATUS Register

High-Impedance

7

6

5

4

3

2

1

0

SO

 2010 Microchip Technology Inc.

DS22100E-page 11

23X256

2.6

Write Status Register Instruction

(WRSR)

The Write Status Register instruction (WRSR) allows the

user to write to the bits in the STATUS register as

shown in Table 2-2. This allows for setting of the Device

operating mode. Several of the bits in the STATUS

register must be cleared to ‘0’. See Figure 2-8 for the

WRSRtiming sequence.

FIGURE 2-8: WRITE STATUS REGISTER TIMING SEQUENCE (WRSR)

CS

0

1

2

3

4

5

6

7

8

9

10

11

12

13

14

1

15

0

SCK

SI

Instruction

Data to STATUS Register

7

6

5

4

3

2

0

1

High-Impedance

SO

2.7

Power-On State

The 23X256 powers on in the following state:

• The device is in low-power Standby mode

(CS= 1)

• A high-to-low-level transition on CS is required to

enter active state

DS22100E-page 12

 2010 Microchip Technology Inc.

23X256

3.5

Hold (HOLD)

3.0

PIN DESCRIPTIONS

The HOLD pin is used to suspend transmission to the

23X256 while in the middle of a serial sequence without

having to retransmit the entire sequence again. It must

be held high any time this function is not being used.

Once the device is selected and a serial sequence is

underway, the HOLD pin may be pulled low to pause

further serial communication without resetting the

serial sequence. The HOLD pin must be brought low

while SCK is low, otherwise the HOLD function will not

be invoked until the next SCK high-to-low transition.

The 23X256 must remain selected during this

sequence. The SI, SCK and SO pins are in a high-

impedance state during the time the device is paused

and transitions on these pins will be ignored. To resume

serial communication, HOLD must be brought high

while the SCK pin is low, otherwise serial

communication will not resume. Lowering the HOLD

line at any time will tri-state the SO line.

The descriptions of the pins are listed in Table 3-1.

TABLE 3-1:

PIN FUNCTION TABLE

Function

PDIP/SOIC

Name

CS

TSSOP

1

Chip Select Input

Serial Data Output

Ground

SO

2

4

5

6

7

8

VSS

SI

Serial Data Input

Serial Clock Input

Hold Input

SCK

HOLD

VCC

Supply Voltage

3.1

Chip Select (CS)

A low level on this pin selects the device. A high level

deselects the device and forces it into Standby mode.

When the device is deselected, SO goes to the high-

impedance state, allowing multiple parts to share the

same SPI bus. After power-up, a low level on CS is

required, prior to any sequence being initiated.

Hold functionality is disabled by the STATUS register

bit.

3.2

Serial Output (SO)

The SO pin is used to transfer data out of the 23X256.

During a read cycle, data is shifted out on this pin after

the falling edge of the serial clock.

3.3

Serial Input (SI)

The SI pin is used to transfer data into the device. It

receives instructions, addresses and data. Data is

latched on the rising edge of the serial clock.

3.4

Serial Clock (SCK)

The SCK is used to synchronize the communication

between a master and the 23X256. Instructions,

addresses or data present on the SI pin are latched on

the rising edge of the clock input, while data on the SO

pin is updated after the falling edge of the clock input.

 2010 Microchip Technology Inc.

DS22100E-page 13

23X256

4.0

4.1

PACKAGING INFORMATION

Package Marking Information

Example:

8-Lead PDIP

23K256

I/P 1L7

XXXXXXXX

T/XXXNNN

e

3

0528

YYWW

Example:

23K256I

8-Lead SOIC (3.90 mm)

XXXXXXXT

SN

0528

e

3

XXXXYYWW

1L7

NNN

Example:

K256

8-Lead TSSOP

XXXX

TYWW

I837

1L7

NNN

Legend: XX...X Part number or part number code

T

Temperature (I, E)

Y

Year code (last digit of calendar year)

YY

WW

NNN

Year code (last 2 digits of calendar year)

Week code (week of January 1 is week ‘01’)

Alphanumeric traceability code (2 characters for small packages)

Pb-free JEDEC designator for Matte Tin (Sn)

e

3

Note: For very small packages with no room for the Pb-free JEDEC designator

, the marking will only appear on the outer carton or reel label.

e

3

Note: In the event the full Microchip part number cannot be marked on one line, it will

be carried over to the next line, thus limiting the number of available

characters for customer-specific information.

DS22100E-page 14

 2010 Microchip Technology Inc.

23X256

ꢀꢁꢂꢃꢄꢅꢆꢇꢈꢄꢉꢊꢋꢌꢆꢍꢎꢄꢈꢆꢏꢐꢁꢂꢋꢐꢃꢆꢑꢇꢒꢆꢓꢆꢔꢕꢕꢆꢖꢋꢈꢆꢗꢘꢅꢙꢆꢚꢇꢍꢏꢇꢛ

ꢜꢘꢊꢃꢝ ꢬꢕꢐꢅꢏꢘꢌꢅꢑꢕꢇꢏꢅꢖꢈꢐꢐꢌꢄꢏꢅꢡꢉꢖꢭꢉꢜꢌꢅꢋꢐꢉꢗꢃꢄꢜꢇꢓꢅꢡꢊꢌꢉꢇꢌꢅꢇꢌꢌꢅꢏꢘꢌꢅꢢꢃꢖꢐꢕꢖꢘꢃꢡꢅꢂꢉꢖꢭꢉꢜꢃꢄꢜꢅꢛꢡꢌꢖꢃꢎꢃꢖꢉꢏꢃꢕꢄꢅꢊꢕꢖꢉꢏꢌꢋꢅꢉꢏꢅ

ꢘꢏꢏꢡꢪꢮꢮꢗꢗꢗꢁꢑꢃꢖꢐꢕꢖꢘꢃꢡꢁꢖꢕꢑꢮꢡꢉꢖꢭꢉꢜꢃꢄꢜ

N

NOTE 1

E1

3

1

2

D

E

A2

A

L

A1

c

e

eB

b1

b

ꢯꢄꢃꢏꢇ

ꢰꢱꢝꢲꢠꢛ

ꢟꢃꢑꢌꢄꢇꢃꢕꢄꢅꢳꢃꢑꢃꢏꢇ

ꢢꢰꢱ

ꢱꢴꢢ

ꢶ

ꢁꢀꢣꢣꢅꢩꢛꢝ

ꢷ

ꢁꢀꢞꢣ

ꢷ

ꢁꢞꢀꢣ

ꢁꢙꢨꢣ

ꢁꢞꢺꢨ

ꢁꢀꢞꢣ

ꢁꢣꢀꢣ

ꢁꢣꢺꢣ

ꢁꢣꢀꢶ

ꢷ

ꢢꢦꢵ

ꢱꢈꢑꢔꢌꢐꢅꢕꢎꢅꢂꢃꢄꢇ

ꢂꢃꢏꢖꢘ

ꢫꢕꢡꢅꢏꢕꢅꢛꢌꢉꢏꢃꢄꢜꢅꢂꢊꢉꢄꢌ

ꢢꢕꢊꢋꢌꢋꢅꢂꢉꢖꢭꢉꢜꢌꢅꢫꢘꢃꢖꢭꢄꢌꢇꢇ

ꢩꢉꢇꢌꢅꢏꢕꢅꢛꢌꢉꢏꢃꢄꢜꢅꢂꢊꢉꢄꢌ

ꢛꢘꢕꢈꢊꢋꢌꢐꢅꢏꢕꢅꢛꢘꢕꢈꢊꢋꢌꢐꢅꢹꢃꢋꢏꢘ

ꢢꢕꢊꢋꢌꢋꢅꢂꢉꢖꢭꢉꢜꢌꢅꢹꢃꢋꢏꢘ

ꢴꢆꢌꢐꢉꢊꢊꢅꢳꢌꢄꢜꢏꢘ

ꢱ

ꢌ

ꢦ

ꢦꢙ

ꢦꢀ

ꢠ

ꢠꢀ

ꢟ

ꢳ

ꢖ

ꢔꢀ

ꢔ

ꢌꢩ

ꢷ

ꢁꢙꢀꢣ

ꢁꢀꢸꢨ

ꢷ

ꢁꢀꢀꢨ

ꢁꢣꢀꢨ

ꢁꢙꢸꢣ

ꢁꢙꢥꢣ

ꢁꢞꢥꢶ

ꢁꢀꢀꢨ

ꢁꢣꢣꢶ

ꢁꢣꢥꢣ

ꢁꢣꢀꢥ

ꢷ

ꢁꢞꢙꢨ

ꢁꢙꢶꢣ

ꢁꢥꢣꢣ

ꢁꢀꢨꢣ

ꢁꢣꢀꢨ

ꢁꢣꢻꢣ

ꢁꢣꢙꢙ

ꢁꢥꢞꢣ

ꢫꢃꢡꢅꢏꢕꢅꢛꢌꢉꢏꢃꢄꢜꢅꢂꢊꢉꢄꢌ

ꢳꢌꢉꢋꢅꢫꢘꢃꢖꢭꢄꢌꢇꢇ

ꢯꢡꢡꢌꢐꢅꢳꢌꢉꢋꢅꢹꢃꢋꢏꢘ

ꢳꢕꢗꢌꢐꢅꢳꢌꢉꢋꢅꢹꢃꢋꢏꢘ

ꢴꢆꢌꢐꢉꢊꢊꢅꢼꢕꢗꢅꢛꢡꢉꢖꢃꢄꢜꢅꢅꢚ

ꢜꢘꢊꢃꢉꢝ

ꢀꢁ ꢂꢃꢄꢅꢀꢅꢆꢃꢇꢈꢉꢊꢅꢃꢄꢋꢌꢍꢅꢎꢌꢉꢏꢈꢐꢌꢅꢑꢉꢒꢅꢆꢉꢐꢒꢓꢅꢔꢈꢏꢅꢑꢈꢇꢏꢅꢔꢌꢅꢊꢕꢖꢉꢏꢌꢋꢅꢗꢃꢏꢘꢅꢏꢘꢌꢅꢘꢉꢏꢖꢘꢌꢋꢅꢉꢐꢌꢉꢁ

ꢙꢁ ꢚꢅꢛꢃꢜꢄꢃꢎꢃꢖꢉꢄꢏꢅꢝꢘꢉꢐꢉꢖꢏꢌꢐꢃꢇꢏꢃꢖꢁ

ꢞꢁ ꢟꢃꢑꢌꢄꢇꢃꢕꢄꢇꢅꢟꢅꢉꢄꢋꢅꢠꢀꢅꢋꢕꢅꢄꢕꢏꢅꢃꢄꢖꢊꢈꢋꢌꢅꢑꢕꢊꢋꢅꢎꢊꢉꢇꢘꢅꢕꢐꢅꢡꢐꢕꢏꢐꢈꢇꢃꢕꢄꢇꢁꢅꢢꢕꢊꢋꢅꢎꢊꢉꢇꢘꢅꢕꢐꢅꢡꢐꢕꢏꢐꢈꢇꢃꢕꢄꢇꢅꢇꢘꢉꢊꢊꢅꢄꢕꢏꢅꢌꢍꢖꢌꢌꢋꢅꢁꢣꢀꢣꢤꢅꢡꢌꢐꢅꢇꢃꢋꢌꢁ

ꢥꢁ ꢟꢃꢑꢌꢄꢇꢃꢕꢄꢃꢄꢜꢅꢉꢄꢋꢅꢏꢕꢊꢌꢐꢉꢄꢖꢃꢄꢜꢅꢡꢌꢐꢅꢦꢛꢢꢠꢅꢧꢀꢥꢁꢨꢢꢁ

ꢩꢛꢝꢪꢅꢩꢉꢇꢃꢖꢅꢟꢃꢑꢌꢄꢇꢃꢕꢄꢁꢅꢫꢘꢌꢕꢐꢌꢏꢃꢖꢉꢊꢊꢒꢅꢌꢍꢉꢖꢏꢅꢆꢉꢊꢈꢌꢅꢇꢘꢕꢗꢄꢅꢗꢃꢏꢘꢕꢈꢏꢅꢏꢕꢊꢌꢐꢉꢄꢖꢌꢇꢁ

ꢢꢃꢖꢐꢕꢖꢘꢃꢡ ꢫꢌꢖꢘꢄꢕꢊꢕꢜꢒ ꢟꢐꢉꢗꢃꢄꢜ ꢝꢣꢥꢽꢣꢀꢶꢩ

 2010 Microchip Technology Inc.

DS22100E-page 15

23X256

Note: For the most current package drawings, please see the Microchip Packaging Specification located at

http://www.microchip.com/packaging

DS22100E-page 16

 2010 Microchip Technology Inc.

23X256

Note: For the most current package drawings, please see the Microchip Packaging Specification located at

http://www.microchip.com/packaging

 2010 Microchip Technology Inc.

DS22100E-page 17

23X256

ꢀꢁꢂꢃꢄꢅꢆꢇꢈꢄꢉꢊꢋꢌꢆꢞꢖꢄꢈꢈꢆꢟꢎꢊꢈꢋꢐꢃꢆꢑꢞꢜꢒꢆꢓꢆꢜꢄꢠꢠꢘꢡꢢꢆꢔꢣꢤꢕꢆꢖꢖꢆꢗꢘꢅꢙꢆꢚꢞꢟꢏꢥꢛ

ꢜꢘꢊꢃꢝ ꢬꢕꢐꢅꢏꢘꢌꢅꢑꢕꢇꢏꢅꢖꢈꢐꢐꢌꢄꢏꢅꢡꢉꢖꢭꢉꢜꢌꢅꢋꢐꢉꢗꢃꢄꢜꢇꢓꢅꢡꢊꢌꢉꢇꢌꢅꢇꢌꢌꢅꢏꢘꢌꢅꢢꢃꢖꢐꢕꢖꢘꢃꢡꢅꢂꢉꢖꢭꢉꢜꢃꢄꢜꢅꢛꢡꢌꢖꢃꢎꢃꢖꢉꢏꢃꢕꢄꢅꢊꢕꢖꢉꢏꢌꢋꢅꢉꢏꢅ

ꢘꢏꢏꢡꢪꢮꢮꢗꢗꢗꢁꢑꢃꢖꢐꢕꢖꢘꢃꢡꢁꢖꢕꢑꢮꢡꢉꢖꢭꢉꢜꢃꢄꢜ

DS22100E-page 18

 2010 Microchip Technology Inc.

23X256

ꢀꢁꢂꢃꢄꢅꢆꢇꢈꢄꢉꢊꢋꢌꢆꢦꢧꢋꢐꢆꢞꢧꢠꢋꢐꢨꢆꢞꢖꢄꢈꢈꢆꢟꢎꢊꢈꢋꢐꢃꢆꢑꢞꢦꢒꢆꢓꢆꢩꢣꢩꢆꢖꢖꢆꢗꢘꢅꢙꢆꢚꢦꢞꢞꢟꢇꢛ

ꢜꢘꢊꢃꢝ ꢬꢕꢐꢅꢏꢘꢌꢅꢑꢕꢇꢏꢅꢖꢈꢐꢐꢌꢄꢏꢅꢡꢉꢖꢭꢉꢜꢌꢅꢋꢐꢉꢗꢃꢄꢜꢇꢓꢅꢡꢊꢌꢉꢇꢌꢅꢇꢌꢌꢅꢏꢘꢌꢅꢢꢃꢖꢐꢕꢖꢘꢃꢡꢅꢂꢉꢖꢭꢉꢜꢃꢄꢜꢅꢛꢡꢌꢖꢃꢎꢃꢖꢉꢏꢃꢕꢄꢅꢊꢕꢖꢉꢏꢌꢋꢅꢉꢏꢅ

ꢘꢏꢏꢡꢪꢮꢮꢗꢗꢗꢁꢑꢃꢖꢐꢕꢖꢘꢃꢡꢁꢖꢕꢑꢮꢡꢉꢖꢭꢉꢜꢃꢄꢜ

D

N

E

E1

NOTE 1

1

2

b

e

c

φ

A

A2

A1

L

L1

ꢯꢄꢃꢏꢇ

ꢢꢰꢳꢳꢰꢢꢠꢫꢠꢼꢛ

ꢟꢃꢑꢌꢄꢇꢃꢕꢄꢅꢳꢃꢑꢃꢏꢇ

ꢢꢰꢱ

ꢱꢴꢢ

ꢢꢦꢵ

ꢱꢈꢑꢔꢌꢐꢅꢕꢎꢅꢂꢃꢄꢇ

ꢂꢃꢏꢖꢘ

ꢱ

ꢌ

ꢶ

ꢣꢁꢺꢨꢅꢩꢛꢝ

ꢴꢆꢌꢐꢉꢊꢊꢅꢲꢌꢃꢜꢘꢏ

ꢢꢕꢊꢋꢌꢋꢅꢂꢉꢖꢭꢉꢜꢌꢅꢫꢘꢃꢖꢭꢄꢌꢇꢇ

ꢛꢏꢉꢄꢋꢕꢎꢎꢅ

ꢦ

ꢷ

ꢣꢁꢶꢣ

ꢣꢁꢣꢨ

ꢷ

ꢀꢁꢣꢣ

ꢷ

ꢀꢁꢙꢣ

ꢀꢁꢣꢨ

ꢣꢁꢀꢨ

ꢦꢙ

ꢦꢀ

ꢠ

ꢴꢆꢌꢐꢉꢊꢊꢅꢹꢃꢋꢏꢘ

ꢺꢁꢥꢣꢅꢩꢛꢝ

ꢢꢕꢊꢋꢌꢋꢅꢂꢉꢖꢭꢉꢜꢌꢅꢹꢃꢋꢏꢘ

ꢢꢕꢊꢋꢌꢋꢅꢂꢉꢖꢭꢉꢜꢌꢅꢳꢌꢄꢜꢏꢘ

ꢬꢕꢕꢏꢅꢳꢌꢄꢜꢏꢘ

ꢠꢀ

ꢟ

ꢳ

ꢥꢁꢞꢣ

ꢙꢁꢸꢣ

ꢣꢁꢥꢨ

ꢥꢁꢥꢣ

ꢞꢁꢣꢣ

ꢣꢁꢺꢣ

ꢥꢁꢨꢣ

ꢞꢁꢀꢣ

ꢣꢁꢻꢨ

ꢬꢕꢕꢏꢡꢐꢃꢄꢏ

ꢬꢕꢕꢏꢅꢦꢄꢜꢊꢌ

ꢳꢌꢉꢋꢅꢫꢘꢃꢖꢭꢄꢌꢇꢇ

ꢳꢌꢉꢋꢅꢹꢃꢋꢏꢘ

ꢳꢀ

ꢀ

ꢀꢁꢣꢣꢅꢼꢠꢬ

ꢣꢾ

ꢣꢁꢣꢸ

ꢣꢁꢀꢸ

ꢷ

ꢶꢾ

ꢖ

ꢔ

ꢣꢁꢙꢣ

ꢣꢁꢞꢣ

ꢜꢘꢊꢃꢉꢝ

ꢀꢁ ꢂꢃꢄꢅꢀꢅꢆꢃꢇꢈꢉꢊꢅꢃꢄꢋꢌꢍꢅꢎꢌꢉꢏꢈꢐꢌꢅꢑꢉꢒꢅꢆꢉꢐꢒꢓꢅꢔꢈꢏꢅꢑꢈꢇꢏꢅꢔꢌꢅꢊꢕꢖꢉꢏꢌꢋꢅꢗꢃꢏꢘꢃꢄꢅꢏꢘꢌꢅꢘꢉꢏꢖꢘꢌꢋꢅꢉꢐꢌꢉꢁ

ꢙꢁ ꢟꢃꢑꢌꢄꢇꢃꢕꢄꢇꢅꢟꢅꢉꢄꢋꢅꢠꢀꢅꢋꢕꢅꢄꢕꢏꢅꢃꢄꢖꢊꢈꢋꢌꢅꢑꢕꢊꢋꢅꢎꢊꢉꢇꢘꢅꢕꢐꢅꢡꢐꢕꢏꢐꢈꢇꢃꢕꢄꢇꢁꢅꢢꢕꢊꢋꢅꢎꢊꢉꢇꢘꢅꢕꢐꢅꢡꢐꢕꢏꢐꢈꢇꢃꢕꢄꢇꢅꢇꢘꢉꢊꢊꢅꢄꢕꢏꢅꢌꢍꢖꢌꢌꢋꢅꢣꢁꢀꢨꢅꢑꢑꢅꢡꢌꢐꢅꢇꢃꢋꢌꢁ

ꢞꢁ ꢟꢃꢑꢌꢄꢇꢃꢕꢄꢃꢄꢜꢅꢉꢄꢋꢅꢏꢕꢊꢌꢐꢉꢄꢖꢃꢄꢜꢅꢡꢌꢐꢅꢦꢛꢢꢠꢅꢧꢀꢥꢁꢨꢢꢁ

ꢩꢛꢝꢪ ꢩꢉꢇꢃꢖꢅꢟꢃꢑꢌꢄꢇꢃꢕꢄꢁꢅꢫꢘꢌꢕꢐꢌꢏꢃꢖꢉꢊꢊꢒꢅꢌꢍꢉꢖꢏꢅꢆꢉꢊꢈꢌꢅꢇꢘꢕꢗꢄꢅꢗꢃꢏꢘꢕꢈꢏꢅꢏꢕꢊꢌꢐꢉꢄꢖꢌꢇꢁ

ꢼꢠꢬꢪ ꢼꢌꢎꢌꢐꢌꢄꢖꢌꢅꢟꢃꢑꢌꢄꢇꢃꢕꢄꢓꢅꢈꢇꢈꢉꢊꢊꢒꢅꢗꢃꢏꢘꢕꢈꢏꢅꢏꢕꢊꢌꢐꢉꢄꢖꢌꢓꢅꢎꢕꢐꢅꢃꢄꢎꢕꢐꢑꢉꢏꢃꢕꢄꢅꢡꢈꢐꢡꢕꢇꢌꢇꢅꢕꢄꢊꢒꢁ

ꢢꢃꢖꢐꢕꢖꢘꢃꢡ ꢫꢌꢖꢘꢄꢕꢊꢕꢜꢒ ꢟꢐꢉꢗꢃꢄꢜ ꢝꢣꢥꢽꢣꢶꢺꢩ

 2010 Microchip Technology Inc.

DS22100E-page 19

23X256

Note: For the most current package drawings, please see the Microchip Packaging Specification located at

http://www.microchip.com/packaging

DS22100E-page 20

 2010 Microchip Technology Inc.

23X256

APPENDIX A: REVISION HISTORY

Revision A (11/2008)

Original Release.

Revision B (12/2008)

Updates; Table 1-1, add Param. D011.

Revision C (01/2009)

Revised Section 2.5: Added a paragraph.

Revision D (04/2009)

Removed Preliminary status; Revised Standby

Current; Revised Table 1-1, Param. No. D009; Revised

TSSOP Package marking; Revised Product ID.

Revision E (08/2010)

Revised Table 1-1, Param. No. D009; Revised

Package Drawings.

 2010 Microchip Technology Inc.

DS22100E-page 21

23X256

NOTES:

DS22100E-page 22

 2010 Microchip Technology Inc.

23A256/23K256

THE MICROCHIP WEB SITE

CUSTOMER SUPPORT

Microchip provides online support via our WWW site at

www.microchip.com. This web site is used as a means

to make files and information easily available to

customers. Accessible by using your favorite Internet

browser, the web site contains the following

information:

Users of Microchip products can receive assistance

through several channels:

• Distributor or Representative

• Local Sales Office

• Field Application Engineer (FAE)

• Technical Support

• Product Support – Data sheets and errata,

application notes and sample programs, design

resources, user’s guides and hardware support

documents, latest software releases and archived

software

• Development Systems Information Line

Customers

should

contact

their

distributor,

representative or field application engineer (FAE) for

support. Local sales offices are also available to help

customers. A listing of sales offices and locations is

included in the back of this document.

• General Technical Support – Frequently Asked

Questions (FAQ), technical support requests,

online discussion groups, Microchip consultant

program member listing

Technical support is available through the web site

at: http://support.microchip.com

• Business of Microchip – Product selector and

ordering guides, latest Microchip press releases,

listing of seminars and events, listings of

Microchip sales offices, distributors and factory

representatives

CUSTOMER CHANGE NOTIFICATION

SERVICE

Microchip’s customer notification service helps keep

customers current on Microchip products. Subscribers

will receive e-mail notification whenever there are

changes, updates, revisions or errata related to a

specified product family or development tool of interest.

To register, access the Microchip web site at

www.microchip.com, click on Customer Change

Notification and follow the registration instructions.

 2010 Microchip Technology Inc.

DS22100E-page 23

23A256/23K256

READER RESPONSE

It is our intention to provide you with the best documentation possible to ensure successful use of your Microchip

product. If you wish to provide your comments on organization, clarity, subject matter, and ways in which our

documentation can better serve you, please FAX your comments to the Technical Publications Manager at

(480) 792-4150.

Please list the following information, and use this outline to provide us with your comments about this document.

TO:

RE:

Technical Publications Manager

Reader Response

Total Pages Sent ________

From:

Name

Company

Address

City / State / ZIP / Country

Telephone: (_______) _________ - _________

FAX: (______) _________ - _________

Literature Number: DS22100E

Application (optional):

Would you like a reply?

Y

N

Device: 23A256/23K256

Questions:

1. What are the best features of this document?

2. How does this document meet your hardware and software development needs?

3. Do you find the organization of this document easy to follow? If not, why?

4. What additions to the document do you think would enhance the structure and subject?

5. What deletions from the document could be made without affecting the overall usefulness?

6. Is there any incorrect or misleading information (what and where)?

7. How would you improve this document?

DS22100E-page 24

 2010 Microchip Technology Inc.

23A256/23K256

PRODUCT IDENTIFICATION SYSTEM

To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.

PART NO.

Device

X

/XX

X

–

Examples:

Tape & Reel

Package

Temp Range

a)

b)

c)

23K256-I/ST = 256 Kbit, 3.6V Serial SRAM,

Industrial temp., TSSOP package

23A256T-I/SN = 256 Kbit, 1.8V Serial SRAM,

Industrial temp., Tape & Reel, SOIC package

23K256-E/ST = 256 Kbit, 3.6V Serial SRAM,

Automotive temp., TSSOP package

Device:

23A256 =

23K256 =

256 Kbit, 1.8V, SPI Serial SRAM

256 Kbit, 3.6V, SPI Serial SRAM

Tape & Reel:

Blank

T

=

Standard packaging (tube)

Tape & Reel

Temperature

Range:

I

E

=

-40C to+85C

-40C to+125C

Package:

P

SN

ST

=

Plastic PDIP (300 mil body), 8-lead

Plastic SOIC (3.90 mml body), 8-lead

TSSOP, 8-lead

 2010 Microchip Technology Inc.

DS22100E-page 25

23A256/23K256

NOTES:

DS22100E-page 26

 2010 Microchip Technology Inc.

Note the following details of the code protection feature on Microchip devices:

•

Microchip products meet the specification contained in their particular Microchip Data Sheet.

•

Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the

intended manner and under normal conditions.

•

There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our

knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data

Sheets. Most likely, the person doing so is engaged in theft of intellectual property.

•

Microchip is willing to work with the customer who is concerned about the integrity of their code.

Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not

mean that we are guaranteeing the product as “unbreakable.”

Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our

products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts

allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.

Information contained in this publication regarding device

applications and the like is provided only for your convenience

and may be superseded by updates. It is your responsibility to

ensure that your application meets with your specifications.

MICROCHIP MAKES NO REPRESENTATIONS OR

WARRANTIES OF ANY KIND WHETHER EXPRESS OR

IMPLIED, WRITTEN OR ORAL, STATUTORY OR

OTHERWISE, RELATED TO THE INFORMATION,

INCLUDING BUT NOT LIMITED TO ITS CONDITION,

QUALITY, PERFORMANCE, MERCHANTABILITY OR

FITNESS FOR PURPOSE. Microchip disclaims all liability

arising from this information and its use. Use of Microchip

devices in life support and/or safety applications is entirely at

the buyer’s risk, and the buyer agrees to defend, indemnify and

hold harmless Microchip from any and all damages, claims,

suits, or expenses resulting from such use. No licenses are

conveyed, implicitly or otherwise, under any Microchip

intellectual property rights.

Trademarks

The Microchip name and logo, the Microchip logo, dsPIC,

KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, PICSTART,

32

PIC logo, rfPIC and UNI/O are registered trademarks of

Microchip Technology Incorporated in the U.S.A. and other

countries.

FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,

MXDEV, MXLAB, SEEVAL and The Embedded Control

Solutions Company are registered trademarks of Microchip

Technology Incorporated in the U.S.A.

Analog-for-the-Digital Age, Application Maestro, CodeGuard,

dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,

ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial

Programming, ICSP, Mindi, MiWi, MPASM, MPLAB Certified

logo, MPLIB, MPLINK, mTouch, Octopus, Omniscient Code

Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit,

PICtail, REAL ICE, rfLAB, Select Mode, Total Endurance,

TSHARC, UniWinDriver, WiperLock and ZENA are

trademarks of Microchip Technology Incorporated in the

U.S.A. and other countries.

SQTP is a service mark of Microchip Technology Incorporated

in the U.S.A.

All other trademarks mentioned herein are property of their

respective companies.

Printed on recycled paper.

ISBN: 978-1-60932-462-9

Microchip received ISO/TS-16949:2002 certification for its worldwide

headquarters, design and wafer fabrication facilities in Chandler and

Tempe, Arizona; Gresham, Oregon and design centers in California

and India. The Company’s quality system processes and procedures

are for its PIC^®MCUs and dsPIC^®DSCs, KEELOQ^®code hopping

devices, Serial EEPROMs, microperipherals, nonvolatile memory and

analog products. In addition, Microchip’s quality system for the design

and manufacture of development systems is ISO 9001:2000 certified.

 2010 Microchip Technology Inc.

DS22100E-page 27

Worldwide Sales and Service

AMERICAS

ASIA/PACIFIC

EUROPE

Corporate Office

Asia Pacific Office

Suites 3707-14, 37th Floor

Tower 6, The Gateway

Harbour City, Kowloon

Hong Kong

Tel: 852-2401-1200

Fax: 852-2401-3431

India - Bangalore

Tel: 91-80-3090-4444

Fax: 91-80-3090-4123

Austria - Wels

Tel: 43-7242-2244-39

Fax: 43-7242-2244-393

2355 West Chandler Blvd.

Chandler, AZ 85224-6199

Tel: 480-792-7200

Fax: 480-792-7277

Technical Support:

http://support.microchip.com

Web Address:

www.microchip.com

Denmark - Copenhagen

Tel: 45-4450-2828

Fax: 45-4485-2829

India - New Delhi

Tel: 91-11-4160-8631

Fax: 91-11-4160-8632

France - Paris

Tel: 33-1-69-53-63-20

Fax: 33-1-69-30-90-79

India - Pune

Tel: 91-20-2566-1512

Fax: 91-20-2566-1513

Australia - Sydney

Tel: 61-2-9868-6733

Fax: 61-2-9868-6755

Atlanta

Duluth, GA

Tel: 678-957-9614

Fax: 678-957-1455

Germany - Munich

Tel: 49-89-627-144-0

Fax: 49-89-627-144-44

Japan - Yokohama

Tel: 81-45-471- 6166

Fax: 81-45-471-6122

China - Beijing

Tel: 86-10-8528-2100

Fax: 86-10-8528-2104

Italy - Milan

Tel: 39-0331-742611

Fax: 39-0331-466781

Korea - Daegu

Tel: 82-53-744-4301

Fax: 82-53-744-4302

Boston

China - Chengdu

Tel: 86-28-8665-5511

Fax: 86-28-8665-7889

Westborough, MA

Tel: 774-760-0087

Fax: 774-760-0088

Netherlands - Drunen

Tel: 31-416-690399

Fax: 31-416-690340

Korea - Seoul

China - Chongqing

Tel: 86-23-8980-9588

Fax: 86-23-8980-9500

Tel: 82-2-554-7200

Fax: 82-2-558-5932 or

82-2-558-5934

Chicago

Itasca, IL

Tel: 630-285-0071

Fax: 630-285-0075

Spain - Madrid

Tel: 34-91-708-08-90

Fax: 34-91-708-08-91

China - Hong Kong SAR

Tel: 852-2401-1200

Fax: 852-2401-3431

Malaysia - Kuala Lumpur

Tel: 60-3-6201-9857

Fax: 60-3-6201-9859

Cleveland

UK - Wokingham

Tel: 44-118-921-5869

Fax: 44-118-921-5820

Independence, OH

Tel: 216-447-0464

Fax: 216-447-0643

China - Nanjing

Tel: 86-25-8473-2460

Fax: 86-25-8473-2470

Malaysia - Penang

Tel: 60-4-227-8870

Fax: 60-4-227-4068

Dallas

Addison, TX

Tel: 972-818-7423

Fax: 972-818-2924

China - Qingdao

Tel: 86-532-8502-7355

Fax: 86-532-8502-7205

Philippines - Manila

Tel: 63-2-634-9065

Fax: 63-2-634-9069

Detroit

China - Shanghai

Tel: 86-21-5407-5533

Fax: 86-21-5407-5066

Singapore

Tel: 65-6334-8870

Fax: 65-6334-8850

Farmington Hills, MI

Tel: 248-538-2250

Fax: 248-538-2260

China - Shenyang

Tel: 86-24-2334-2829

Fax: 86-24-2334-2393

Taiwan - Hsin Chu

Tel: 886-3-6578-300

Fax: 886-3-6578-370

Kokomo

Kokomo, IN

Tel: 765-864-8360

Fax: 765-864-8387

China - Shenzhen

Tel: 86-755-8203-2660

Fax: 86-755-8203-1760

Taiwan - Kaohsiung

Tel: 886-7-213-7830

Fax: 886-7-330-9305

Los Angeles

Mission Viejo, CA

Tel: 949-462-9523

Fax: 949-462-9608

China - Wuhan

Tel: 86-27-5980-5300

Fax: 86-27-5980-5118

Taiwan - Taipei

Tel: 886-2-2500-6610

Fax: 886-2-2508-0102

Santa Clara

China - Xian

Tel: 86-29-8833-7252

Fax: 86-29-8833-7256

Thailand - Bangkok

Tel: 66-2-694-1351

Fax: 66-2-694-1350

Santa Clara, CA

Tel: 408-961-6444

Fax: 408-961-6445

China - Xiamen

Tel: 86-592-2388138

Fax: 86-592-2388130

Toronto

Mississauga, Ontario,

Canada

Tel: 905-673-0699

Fax: 905-673-6509

China - Zhuhai

Tel: 86-756-3210040

Fax: 86-756-3210049

08/04/10

DS22100E-page 28

 2010 Microchip Technology Inc.


型号：	23K256T-E/ST
厂家：	MICROCHIP
描述：	256K SPI Bus Low-Power Serial SRAM 256K SPI总线的低功耗串行SRAM 存储内存集成电路静态存储器光电二极管时钟
文件：	总28页 (文件大小：542K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

23K256T-E/ST [MICROCHIP]

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