MIC5020BMT&R [MICREL]

Buffer/Inverter Based MOSFET Driver, BIMOS, PDSO8, SOIC-8;
MIC5020BMT&R
型号: MIC5020BMT&R
厂家: MICREL SEMICONDUCTOR    MICREL SEMICONDUCTOR
描述:

Buffer/Inverter Based MOSFET Driver, BIMOS, PDSO8, SOIC-8

驱动器
文件: 总7页 (文件大小:102K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MIC5020  
Current-Sensing Low-Side MOSFET Driver  
General Description  
Features  
The MIC5020 low-side MOSFET driver is designed to oper-  
ate at frequencies greater than 100kHz (5kHz PWM for 2% to  
100% duty cycle) and is an ideal choice for high-speed  
applications such as motor control, SMPS (switch mode  
powersupplies),andapplicationsusing IGBTs. TheMIC5020  
canalsooperateasacircuitbreakerwithorwithoutautomatic  
retry. The MIC5020’s maximum supply voltage lends itself to  
control applications using up to 50V. The MIC5020 can  
control MOSFETs that switch voltages greater than 50V.  
• 11V to 50V operation  
• 175ns rise/fall time driving 2000pF  
• TTL compatible input with internal pull-down resistor  
• Overcurrent limit  
• Fault output indication  
• Gate to source protection  
• Compatible with current sensing MOSFETs  
Applications  
• Lamp control  
• Heater control  
• Motor control  
• Solenoid switching  
• Switch-mode power supplies  
• Circuit breaker  
A rising or falling edge on the input results in a current source  
orsinkpulseonthegateoutput. Thisoutputcurrentpulsecan  
turn on or off a 2000pF MOSFET in approximately 175ns.  
The MIC5020 then supplies a limited current (< 2mA), if  
necessary, to maintain the output state.  
Anovercurrentcomparatorwithatripvoltageof50mVmakes  
the MIC5020 ideal for use with a current sensing MOSFET.  
An external low value resistor may be used instead of a  
sensing MOSFET for more precise overcurrent control. An  
optional external capacitor connected to the C pin may be  
T
Ordering Information  
used to control the current shutdown duty cycle from 20% to  
< 1%. A duty cycle from 20% to about 75% is possible with  
an optional pull-up resistor from C to V . An open collector  
Part Number  
MIC5020BM  
MIC5020BN  
Temperature Range  
–40°C to +85°C  
Package  
8-pin SOIC  
T
DD  
output provides a fault indication when the sense inputs are  
tripped.  
–40°C to +85°C  
8-pin Plastic DIP  
The MIC5020 is available in 8-pin SOIC and plastic DIP  
packages.  
Other members of the MIC502x series include the MIC5021  
high-side driver and the MIC5022 half-bridge driver with a  
cross-conduction interlock.  
Typical Application  
V+  
+11V to +50V  
10µF  
MIC5020  
1
2
3
4
8
7
6
5
N-Channel  
Power MOSFET  
VDD  
Gate  
150kHz max.  
Input  
Fault  
CT  
Sense  
Sense+  
Gnd  
50mV  
ITRIP  
RSENSE  
=
optional*  
RSENSE  
* increases time before retry  
Low-Side Driver with Overcurrent Trip and Retry  
5-162  
October 1998  
MIC5020  
Micrel  
Pin Configuration  
1 VDD  
Gate 8  
1
2
VDD  
Input Sense7  
Fault Sense+  
Gate 8  
2 Input Sense7  
Fault Sense+  
3
6
3
4
6
4 CT  
Gnd 5  
CT  
Gnd 5  
DIP Package  
(N)  
SOIC Package  
(M)  
Block Diagram  
6V Internal Regulator  
I1  
Fault  
CT  
CINT  
2I1  
Normal  
Fault  
Q1  
Sense +  
VDD  
Sense –  
50mV  
ON  
OFF  
6V  
ONE-  
SHOT  
10I2  
I2  
Gate  
Input  
5
Transistor Count: 82  
Pin Description  
Pin Number  
Pin Name  
VDD  
Pin Function  
Supply: +11V to +50V. Decouple with 10µF capacitor.  
1
2
Input  
TTL Compatible Input: Logic high turns the external MOSFET on. An internal  
pull-down returns an open pin to logic low.  
3
4
Fault  
CT  
Overcurrent Fault Indicator: When the sense voltage exceeds threshold,  
open collector output is open circuit for 5µs (tG(ON)), then pulled low for  
tG(OFF). tG(OFF) is adjustable from CT.  
Retry Timing Capacitor: Controls the off time (tG(OFF)) of the overcurrent  
retry cycle. (Duty cycle adjustment.)  
• Open = 20% duty cycle.  
• Capacitor to Ground = approx. 20% to <1% duty cycle.  
• Pull-Up resistor = approx. 20% to approx. 75% duty cycle.  
• Ground = maintained shutdown upon overcurrent condition.  
5
6
Gnd  
Circuit Ground  
Sense +  
Current Sense Comparator (+) Input: Connect to high side of sense resistor  
or current sensing MOSFET sense lead. A built-in offset in conjunction with  
RSENSE sets the load overcurrent trip point.  
7
8
Sense –  
Gate  
Current Sense Comparator (–) Input: Connect to the low side of the sense  
resistor (usually power ground).  
Gate Drive: Drives the gate of an external power MOSFET. Also limits VGS  
to 15V max. to prevent Gate to Source damage. Will sink and source  
current.  
October 1998  
5-163  
MIC5020  
Micrel  
Absolute Maximum Ratings  
Operating Ratings  
Supply Voltage (V ) ..................................................+55V  
Supply Voltage (V ) .................................... +11V to +50V  
DD  
DD  
Input Voltage ................................................ –0.5V to +15V  
Sense Differential Voltage..........................................±6.5V  
Sense + or Sense – to Gnd.......................... –0.5V to +50V  
Fault Voltage ...............................................................+50V  
Current into Fault ....................................................... 50mA  
Temperature Range  
SOIC ...................................................... –40°C to +85°C  
Plastic DIP.............................................. –40°C to +85°C  
Timer Voltage (C ) .....................................................+5.5V  
T
Electrical Characteristics  
TA = 25°C, Gnd = 0V, VDD = 12V, Sense +,– = 0V, Fault = Open, CT = Open, Gate CL = 1500pF unless otherwise specificed  
Symbol  
Parameter  
Condition  
Min  
Typ  
0.8  
2
Max  
2
Units  
mA  
mA  
mA  
mA  
V
D.C. Supply Current  
VDD = 12V, Input = 0V  
VDD = 50V, Input = 0V  
VDD = 12V, Input = 5V  
VDD = 50V, Input = 5V  
10  
2
0.8  
4
25  
2.0  
Input Threshold  
0.8  
10  
1.4  
0.1  
20  
Input Hysteresis  
V
Input Pull-Down Current  
Input = 5V  
40  
µA  
V
Fault Output  
Fault Current = 1.6mA  
0.15  
0.4  
Saturation Voltage  
Note 1  
Fault Output Leakage  
Current Limit Threshold  
Gate On Voltage  
Fault = 50V  
–1  
30  
10  
14  
2
0.01  
50  
+1  
70  
µA  
mV  
V
Note 2  
VDD = 12V  
11  
VDD = 50V  
15  
18  
10  
V
tG(ON)  
tG(OFF)  
tDLH  
tR  
Gate On Time, Fixed  
Gate Off Time, Adjustable  
Gate Turn-On Delay  
Gate Rise Time  
Sense Differential > 70mV  
5
µs  
µs  
ns  
ns  
ns  
ns  
kHz  
Sense Differential > 70mV, CT = 0pF  
10  
20  
50  
Note 3  
Note 4  
Note 5  
Note 6  
Note 7  
400  
700  
900  
500  
150  
800  
1500  
1500  
1500  
tDLH  
tF  
Gate Turn-Off Delay  
Gate Fall Time  
fmax  
Maximum Operating Frequency  
100  
Note 1 Voltage remains low for time affected by C .  
T
Note 2 When using sense MOSFETs, it is recommended that R  
< 50. Higher values may affect the sense MOSFET’s current transfer ratio.  
SENSE  
Note 3 Input switched from 0.8V (TTL low) to 2.0V (TTL high), time for Gate transition from 0V to 2V.  
Note 4 Input switched from 0.8V (TTL low) to 2.0V (TTL high), time for Gate transition from 2V to 10V.  
Note 5 Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for Gate transition from 11V (Gate ON voltage) to 10V.  
Note 6 Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for Gate transition from 10V from 2V.  
Note 7 Frequency where gate on voltage reduces to 10V with 50% input duty cycle.  
5-164  
October 1998  
MIC5020  
Micrel  
Typical Characteristics  
Turn-Off Time vs.  
Supply Voltage  
Supply Current vs.  
Turn-On Time vs.  
Supply Voltage  
Supply Voltage  
1200  
1100  
1000  
900  
3.5  
900  
800  
700  
600  
500  
400  
VIN = 5V  
VGATE = 4V  
CL = 1500pF  
VIN = 0 to 5V Sq. Wave  
3.0  
2.5  
2.0  
1.5  
VGATE = 4V  
CL = 1500pF  
VIN = 0 to 5V  
Sq. Wave  
VIN = 0V  
800  
1.0  
INCLUDES PROPAGATION DELAY  
INCLUDES PROPAGATION DELAY  
700  
0.5  
5
10  
15  
20  
(V)  
25  
30  
5
10 15 20 25 30 35 40 45 50  
(V)  
5
10 15 20 25 30 35 40 45 50  
V
SUPPLY  
V
V
(V)  
SUPPLY  
SUPPLY  
Input Current vs.  
Input Voltage  
Turn-On Time vs.  
Gate Capacitance  
Overcurrent Shutdown  
Retry Duty Cycle  
1200  
1000  
800  
100  
80  
60  
40  
20  
0
25.0  
20.0  
15.0  
10.0  
5.0  
VGATE = 4V  
VSUPPLY = 12V  
tON = 5µs  
V
SUPPLY = 12V  
600  
400  
INCLUDES PROPAGATION DELAY  
200  
1x10  
5
0.0  
2
3
4
5
1x10  
C
1x10  
(pF)  
1x10  
0
5
10  
V
15  
(V)  
20  
25  
0.1  
1
10 100 1000 10000  
C (pF)  
T
GATE  
IN  
Sense Threshold vs.  
Temperature  
80  
TTL (H)  
0V  
Input  
Gate  
70  
60  
50  
40  
30  
20  
15V (max.)  
0V  
Sense +, –  
Differential  
50mV  
0V  
Off  
On  
Fault  
Timing Diagram 1. Normal Operation  
-60 -30  
0
30 60 90 120 150  
TEMPERATURE (°C)  
5µs  
20µs  
5µs  
TTL (H)  
TTL (H)  
Input  
Gate  
0V  
Input  
0V  
15V (max.)  
0V  
15V (max.)  
Gate  
0V  
Sense +, –  
Differential  
50mV  
0V  
Sense +, –  
Differential  
50mV  
0V  
Off  
On  
Off  
On  
Fault  
Fault  
Timing Diagram 2. Fault Condition, C = Open  
Timing Diagram 3. Fault Condition, C = Grounded  
T
T
October 1998  
5-165  
MIC5020  
Micrel  
Functional Description  
Refer to the MIC5020 block diagram.  
Input  
MOSFET Q1.  
A fault condition (> 50mV from SENSE + to SENSE –) causes  
the overcurrent comparator to enable current sink 2I which  
A signal greater than 1.4V (nominal) applied to the MIC5020  
INPUT causes gate enhancement on an external MOSFET  
turning the external MOSFET on.  
1
overcomescurrentsourceI todischargeC inashorttime.  
1
INT  
When C  
is discharged, the INPUT is disabled, which turns  
INT  
off the GATE output; the FAULT output is enabled; and C  
INT  
An internal pull-down resistor insures that an open INPUT  
remains low, keeping the external MOSFET turned off.  
and C are ready to be charged.  
T
WhentheGATEoutputturnstheMOSFEToff,theovercurrent  
signal is removed from the sense inputs which deactivates  
Gate Output  
Rapid rise and fall times on the GATE output are possible  
because each input state change triggers a one-shot which  
current sink 2I . This allows C  
and the optional capacitor  
1
INT  
connected to C to recharge. A Schmitt trigger delays the  
T
activatesahigh-valuecurrentsink(10I )forashorttime. This  
2
retry while the capacitor(s) recharge. Retry delay is in-  
draws a high current through a current mirror circuit causing  
the output transistors to quickly charge or discharge the  
external MOSFET’s gate.  
creased by connecting a capacitor to C (optional).  
T
The retry cycle will continue until the the fault is removed or  
the input is changed to TTL low.  
A second current sink continuously draws the lower value of  
current used to maintain the gate voltage for the selected  
state.  
If C is connected to ground, the circuit will not retry upon a  
T
fault condition.  
Fault Output  
An internal 15V Zener diode protects the external MOSFET  
The FAULT output is an open collector transistor. FAULT is  
active at approximately the same time the output is disabled  
by a fault condition (5µs after an overcurrent condition is  
sensed). The FAULT output is open circuit (off) during each  
successive retry (5µs).  
by limiting the gate output voltage when V is connected to  
higher voltages.  
DD  
Overcurrent Limiting  
Current source I charges C  
upon power up. An optional  
INT  
1
external capacitor connected to C is discharged through  
T
Applications Information  
TheMIC5020MOSFETdriverisintendedforlow-sideswitch-  
ing applications where higher supply voltage, overcurrent  
sensing, and moderate speed are required.  
source side sensing is provided by access to both SENSE +  
and SENSE – comparator inputs.  
The adjustable retry feature can be used to handle loads with  
high initial currents, such as lamps, motors, or heating  
Supply Voltage  
elements and can be adjusted from the C connection.  
A feature of the MIC5020 is that its supply voltage rating of up  
to 50V is higher than many other low-side drivers.  
T
C to ground causes maintained gate drive shutdown follow-  
T
ing overcurrent detection.  
The minimum supply voltage required to fully enhance an N-  
channel MOSFET is 11V.  
C open, or through a capacitor to ground, causes automatic  
T
retry. Thedefaultdutycycle(C open)isapproximately20%.  
Refer to the electrical characteristics when selecting a ca-  
pacitor for a reduced duty cycle.  
AlowersupplyvoltagemaybeusedwithlogiclevelMOSFETs.  
Approximately 6V is needed to provide 5V of gate enhance-  
ment.  
T
C through a pull-up resistor to V increases the duty cycle.  
Low-Side Switch Circuit Advantages  
T
DD  
Increasing the duty cycle increases the power dissipation in  
the load and MOSFET. Circuits may become unstable at a  
duty cycles of about 75% or higher, depending on the  
conditions. Caution: The MIC5020 may be damaged if the  
A moderate-speed low-side driver is generally much faster  
than a comparable high-side driver. The MIC5020 can  
provide the gate drive switching times and low propagation  
delay times that are necessary for high-frequency high-  
efficiency circuit operation in PWM (pulse width modulation)  
designs used for motor control, SMPS (switch mode power  
supply) and heating element control. Switched loads (on/off)  
can benefit from the MIC5020’s fast switching times by  
allowing use of MOSFETs with smaller safe operating areas.  
(Larger MOSFETs are often required when using slower  
drivers.)  
voltage on C exceeds the absolute maximum rating.  
T
An overcurrent condition is externally signaled by an open  
collector (FAULT) output.  
The MIC5020 may be used without current sensing by  
connecting SENSE + and SENSE – to ground.  
Current Sense Resistors  
Lead length can be significant when using low value (< 1)  
resistors for current sensing. Errors caused by lead length  
can be avoided by using four-terminal current sensing resis-  
tors. Four-terminal resistors are available from several  
manufacturers.  
Overcurrent Limiting  
A 50mV comparator is provided for current sensing. The low  
2
leveltrippointminimizesI Rlosseswhenpowerresistorsare  
used for current sensing. Flexibility in choosing drain or  
5-166  
October 1998  
MIC5020  
Micrel  
Lamp Driver Application  
Current Sensing MOSFET Application  
Incandescent lamps have a high inrush current (low resis-  
tance) when turned on. The MIC5020 can perform a “soft  
start” by pulsing the MOSFET (overcurrent condition) until  
the filament is warm enough for its current to decrease  
(resistance increases). The sense resistor is selected so the  
voltage across the sense resistor drops below the sense  
threshold (50mV) as the filament becomes warm. The  
MOSFET is no longer pulsed to limit current and the lamp  
turns completely on.  
A current sensing MOSFET allows current sensing without  
adding additional resistance to the power switching circuit.  
A current sensing MOSFET has two source connections: a  
“power source” for power switching and a “current source” for  
current sensing. The current from the current source is  
approximately proportional to the current through the power  
source, but much smaller. A current sensing ratio (I  
/
SOURCE  
I
) is provided by the MOSFET manufacturer.  
SENSE  
V+  
(+13.2V, > 4.4A)  
V+  
(+11V to +12V)  
(3, > 60W)  
Incandescent  
Lamp (#1157)  
+11V to +50V  
(+13.2V)  
N-Channel  
Current Sensing  
Power MOSFET  
MIC5020  
MIC5020  
1
2
3
4
8
7
6
5
N-Channel  
Power MOSFET  
(IRF540)  
1
2
3
4
8
7
6
5
10µF  
TTL Input  
10µF  
VDD  
Gate  
VDD  
Input  
Fault  
CT  
Gate  
(IRCZ24)  
TTL Input  
(0V/5V)  
Input  
Fault  
CT  
Sense−  
Sense+  
Gnd  
Sense  
Sense+  
Gnd  
(0V/5V)  
RSENSE  
(10)  
RSENSE  
(0.041)  
“( )” values apply to  
demo circuit. See text.  
“( )” values apply to  
demo circuit. See text.  
Figure 3. Using a Current Sensing MOSFET  
Figure 1. Lamp Driver with  
Current Sensing  
The MOSFET current source is used to develop a voltage  
across a sense resistor. This voltage is monitored by the  
MIC5020 (SENSE + and SENSE – pins) to identify an overcur-  
rent condition.  
A lamp may not fully turn on if the filament does not heat up  
adequately. Changing the duty cycle, sense resistor, or both  
tomatchthefilamentcharacteristicscancorrecttheproblem.  
5
The value of the sense resistor can be estimated with:  
Soft start can be demonstrated using a #1157 dual-filament  
automotivelamp. ThevalueofR showninfigure1allowsfor  
softstartofthehigher-resistancefilament(measuresapprox.  
2.1cold or 21hot).  
R
= (r V  
R
) / (I  
R
– V  
)
TRIP  
S
SENSE  
TRIP  
DS(ON)  
LOAD  
DS(ON)  
where:  
R
V
= external “sense” resistor  
SENSE  
Solenoid Driver Application  
= 50mV (0.050V) for the MIC5020  
TRIP  
The MIC5020 can be directly powered by the control voltage  
supply in typical 11Vdc through 50Vdc control applications.  
Current sensing has been omitted as an example.  
r = manufacturer’s current sense ratio: (I  
/I  
)
SOURCE SENSE  
R
I
= manufacturer’s power source on resistance  
DS(ON)  
= load current (power source current)  
LOAD  
V+  
The drain to source voltage under different fault conditions  
affects the behavior of the MOSFET current source; that is,  
the current source will respond differently to a slight over-  
Diode  
Solenoid  
current condition (V  
very small) than to a short circuit  
+11V to +50V  
DS(ON)  
(whereV  
isapproximatelyequaltothesupplyvoltage).  
DS(ON)  
MIC5020  
Adjustmentofthesenseresistorvaluebyexperimentstarting  
from the above formula will provide the quickest selection of  
1
2
3
4
8
7
6
5
10µF  
TTL Input  
N-Channel  
Power MOSFET  
VDD  
Input  
Fault  
CT  
Gate  
R
.
Sense−  
Sense+  
Gnd  
SENSE  
Refer to manufacture’s data sheets and application notes for  
detailed information on current sensing MOSFET character-  
istics.  
Figure 3 includes values which can be used to demonstrate  
circuit operation. The IRCZ24 MOSFET has a typical sense  
ratio of 780 and a R  
of 0.10. A large 3wirewound  
DS(ON)  
Figure 2. Solenoid Driver,  
Without Current Sensing  
load resistor will cause inductive spikes which should be  
suppressed using a diode (using the same configuration as  
figure 2).  
A diode across the load protects the MOSFET from the  
voltage spike generated by the inductive load upon MOSFET  
turn off. The peak forward current rating of the diode should  
be greater than the load current.  
October 1998  
5-167  
MIC5020  
Micrel  
Faster MOSFET Switching  
Fortestpurposes,a680loadresistorand3senseresistor  
will produce an overcurrent condition when the load’s supply  
(V+) is approximately 12V or greater.  
The MIC5020’s GATE current can be multiplied using a pair  
of bipolar transistors to permit faster charging and discharg-  
ing of the external MOSFET’s gate.  
Low-Temperature Operation  
As the temperature of the MIC5020AJB (extended tempera-  
ture range version—no longer available) approaches –55°C,  
the driver’s off-state, gate-output offset from ground in-  
creases. If the operating environment of the MIC5020AJB  
includes low temperatures (–40°C to –55°C), add an external  
2.2Mresistor as shown in Figures 6a or 6b. This assures  
that the driver’s gate-to-source voltage is far below the  
external MOSFET’s gate threshold voltage, forcing the  
MOSFET fully off.  
+40V max.  
2N3904  
+11V to +50V  
10µF  
MIC5020  
N-Channel  
Power MOSFET  
(IRF540)  
1
2
3
4
8
7
6
5
VDD  
Gate  
150kHz max.  
Input  
Fault  
CT  
Sense−  
Sense+  
Gnd  
2N3906  
V+  
MIC5020  
+11V to +50V  
10µF  
1
2
3
4
8
7
6
5
VDD  
Gate  
Figure 4. Faster MOSFET Switching Circuit  
Input  
Fault  
CT  
Sens
Sens
Gnd  
2.2M  
NPN and PNP transistors are used to respectively charge  
anddischargetheMOSFETgate. TheMIC5020gatecurrent  
is multiplied by the transistor β.  
RSENSE  
The switched circuit voltage can be increased above 40V by  
selecting transistors with higher ratings.  
Remote Overcurrent Limiting Reset  
Figure 6a. Gate-to-Source Pull Down  
In circuit breaker applications where the MIC5020 maintains  
an off condition after an overcurrent condition is sensed, the  
The gate-to-source configuration (refer to Figure 6a) is ap-  
propriate for resistive and inductive loads. This also causes  
the smallest decrease in gate output voltage.  
C pin can be used to reset the MIC5020.  
T
V+  
V+  
MIC5020  
+11V to +50V  
10µF  
MIC5020  
+11V to +50V  
10µF  
1
2
3
4
8
7
6
5
1
2
3
4
8
7
6
5
N-Channel  
VDD  
Gate  
VDD  
Gate  
Power MOSFET  
Input  
Fault  
CT  
Sens
Sens
Gnd  
TTL input  
Input  
Fault  
CT  
Sense  
Sense+  
Gnd  
Retry (H)  
Maintained (L)  
10k to  
100k  
RSENSE  
2.2M  
RSENSE  
Q1  
2N3904  
74HC04  
(example)  
Figure 6b. Gate-to-Ground Pull Down  
The gate-to-ground configuration (refer to Figure 6b) is  
appropriate for resistive, inductive, or capacitive loads. This  
configuration will decrease the gate output voltage slightly  
more than the circuit shown in Figure 6a.  
Figure 5. Remote Control Circuit  
SwitchingQ1onpullsC lowwhichkeepstheMIC5020GATE  
T
output off when an overcurrent is sensed. Switching Q1 off  
causes C to appear open. The MIC5020 retries in about  
T
20µs and continues to retry until the overcurrent condition is  
removed.  
5-168  
October 1998  

相关型号:

MIC5020BN

Current-Sensing Low-Side MOSFET Driver
MICREL

MIC5020YM

BUF OR INV BASED MOSFET DRIVER, PDSO8
MICROCHIP

MIC5020_05

Current-Sensing Low-Side MOSFET Driver
MICREL

MIC5021

High-Speed High-Side MOSFET Driver
MICREL

MIC5021AJ

Buffer/Inverter Based MOSFET Driver, BIMOS, CDIP8, CERDIP-8
MICROCHIP

MIC5021AJB

Buffer/Inverter Based MOSFET Driver, BIMOS, CDIP8, CERDIP-8
MICREL

MIC5021AJBQ

Buffer/Inverter Based MOSFET Driver, CDIP8, CERDIP-8
MICREL

MIC5021BM

High-Speed High-Side MOSFET Driver
MICREL

MIC5021BMT&R

Buffer/Inverter Based MOSFET Driver, BIMOS, PDSO8, SOIC-8
MICROCHIP

MIC5021BN

High-Speed High-Side MOSFET Driver
MICREL

MIC5021YM

BUF OR INV BASED MOSFET DRIVER, PDSO8
MICROCHIP

MIC5021YM-TR

BUF OR INV BASED MOSFET DRIVER, PDSO8
MICROCHIP