MIC5011 [MICREL]

Minimum Parts High- or Low-Side MOSFET Driver; 最小的零件高或低侧MOSFET驱动器
MIC5011
型号: MIC5011
厂家: MICREL SEMICONDUCTOR    MICREL SEMICONDUCTOR
描述:

Minimum Parts High- or Low-Side MOSFET Driver
最小的零件高或低侧MOSFET驱动器

驱动器
文件: 总12页 (文件大小:124K)
中文:  中文翻译
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MIC5011  
Minimum Parts High- or Low-Side MOSFET Driver  
General Description  
Features  
The MIC5011 is the “minimum parts count” member of the  
Micrel MIC501X driver family. These ICs are designed to  
drive the gate of an N-channel power MOSFET above the  
supplyrailinhigh-sidepowerswitchapplications. The8-pin  
MIC5011 is extremely easy to use, requiring only a power  
FET and nominal supply decoupling to implement either a  
high- or low-side switch.  
• 4.75V to 32V operation  
• Less than 1µA standby current in the “off” state  
• Internal charge pump to drive the gate of an N-channel  
power FET above supply  
• Available in small outline SOIC packages  
• Internal zener clamp for gate protection  
• Minimum external parts count  
• Can be used to boost drive to low-side power FETs  
operating on logic supplies  
• 25µs typical turn-on time with optional external  
capacitors  
The MIC5011 charges a 1nF load in 60µs typical with no  
external components. Faster switching is achieved by add-  
ing two 1nF charge pump capacitors. Operation down to  
4.75V allows the MIC5011 to drive standard MOSFETs in  
5V low-side applications by boosting the gate voltage  
above the logic supply. In addition, multiple paralleled  
MOSFETs can be driven by a single MIC5011 for ultra-high  
current applications.  
• Implements high- or low-side drivers  
Applications  
• Lamp drivers  
Other members of the Micrel driver family include the  
MIC5012 dual driver and MIC5013 protected 8-pin driver.  
• Relay and solenoid drivers  
• Heater switching  
• Power bus switching  
For new designs, Micrel recommends the pin-compatible  
MIC5014 MOSFET driver.  
Typical Applications  
Ordering Information  
Part Number  
MIC5011BN  
MIC5011BM  
Temp. Range  
Package  
14.4V  
–40°C to +85°C 8-pin Plastic DIP  
–40°C to +85°C 8-pin SOIC  
ON  
+
MIC5011  
10µF  
8
7
6
5
1
2
3
4
V+  
C1  
Control Input  
Input  
Source  
Gnd  
Com  
C2  
Gate  
IRF531  
#6014  
OFF  
Figure 1. High Side Driver  
Note: The MIC5011 is ESD sensitive.  
5V  
48V  
ON  
10µF  
+
MIC5011  
8
7
6
5
1
2
3
4
V+  
C1  
100W  
Input  
Source  
Gnd  
Com  
C2  
Control Input  
Heater  
Gate  
IRF530  
Protected under one or more of the following Micrel patents:  
patent #4,951,101; patent #4,914,546  
OFF  
Figure 2. Low Side Driver  
Micrel, Inc. • 1849 Fortune Drive • San Jose, CA 95131 • USA • tel + 1 (408) 944-0800 • fax + 1 (408) 944-0970 • http://www.micrel.com  
July 2000  
1
MIC5011  
MIC5011  
Micrel  
Absolute Maximum Ratings (Note 1, 2)  
Operating Ratings (Notes 1, 2)  
Power Dissipation  
+
Supply Voltage (V ), Pin 1  
Input Voltage, Pin 2  
Source Voltage, Pin 3  
Current into Pin 3  
0.5V to 36V  
10V to V  
10V to V  
50mA  
1V to 50V  
150°C  
1.25W  
100°C/W  
170°C/W  
+
+
θ
θ
(Plastic DIP)  
(SOIC)  
JA  
JA  
Ambient Temperature: B version  
Storage Temperature  
Lead Temperature  
40°C to +85°C  
65°C to +150°C  
260°C  
Gate Voltage, Pin 5  
Junction Temperature  
(Soldering, 10 seconds)  
+
Supply Voltage (V ), Pin 1  
4.75V to 32V high side  
4.75V to 15V low side  
Pin Description (Refer to Typical Applications)  
Pin Number  
Pin Name  
Pin Function  
1
V+  
Supply; must be decoupled to isolate from large transients caused by the  
power FET drain. 10µF is recommended close to pins 1 and 4.  
2
3
Input  
Turns on power MOSFET when taken above threshold (3.5V typical).  
Requires <1 µA to switch.  
Source  
Connects to source lead of power FET and is the return for the gate clamp  
zener. Can safely swing to 10V when turning off inductive loads.  
4
5
Ground  
Gate  
Drives and clamps the gate of the power FET. Will be clamped to approxi-  
mately 0.7V by an internal diode when turning off inductive loads.  
6, 7, 8  
C2, Com, C1  
Optional 1nF capacitors reduce gate turn-on time; C2 has dominant effect.  
Pin Configuration  
MIC5011  
1
2
3
4
8
7
6
5
C1  
Com  
C2  
V+  
Input  
Source  
Gnd  
Gate  
MIC5011  
2
July 2000  
MIC5011  
Micrel  
Electrical Characteristics (Note 3) Test circuit. TA = 55°C to +125°C, V+ = 15V, all switches open, unless  
otherwise specified.  
Parameter  
Conditions  
Min Typical Max  
Units  
Supply Current, I1  
V+ = 32V  
VIN = 0V, S2 closed  
VIN = V+ = 32V  
0.1  
8
10  
20  
4
µA  
mA  
mA  
V
V+ = 5V  
VIN = 5V, S2 closed  
Adjust VIN for VGATE low  
Adjust VIN for VGATE high  
Adjust VIN for VGATE high  
VIN = 0V  
1.6  
Logic Input Voltage  
V+ = 4.75V  
2
4.5  
5.0  
1  
V
V+ = 15V  
V+ = 32V  
V
Logic Input Current, I2  
µA  
µA  
pF  
V
VIN = 32V  
1
Input Capacitance  
Gate Drive, VGATE  
Pin 2  
5
10  
S1, S2 closed,  
VS = V+, VIN = 5V  
S2 closed, VIN = 5V  
V+ = 4.75V, IGATE = 0, VIN = 4.5V  
V+ = 15V, IGATE = 100µA, VIN = 5V  
V+ = 15V, VS = 15V  
7
24  
11  
11  
27  
V
Zener Clamp,  
12.5  
13  
15  
16  
50  
V
VGATE VSOURCE  
V+ = 32V, VS = 32V  
V
Gate Turn-on Time, tON  
(Note 4)  
VIN switched from 0 to 5V; measure time  
for VGATE to reach 20V  
25  
µs  
Gate Turn-off Time, tOFF  
VIN switched from 5 to 0V; measure time  
for VGATE to reach 1V  
4
10  
µs  
Note 1 Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Electrical specifications do not apply when  
operating the device beyond its specified Operating Ratings.  
Note 2 The MIC5011 is ESD sensitive.  
Note 3 Minimum and maximum Electrical Characteristics are 100% tested at T = 25°C and T = 85°C, and 100% guaranteed over the entire  
A
A
range. Typicals are characterized at 25°C and represent the most likely parametric norm.  
Note 4 Test conditions reflect worst case high-side driver performance. Low-side and bootstrapped topologies are significantly fastersee  
Applications Information. Maximum value of switching speed seen at 125°C, units operated at room temperature will reflect the typical  
values shown.  
Test Circuit  
V+  
+
1µF  
MIC5011  
1
2
3
4
8
7
6
5
V+  
C1  
Com  
C2  
1nF  
1nF  
Input  
Source  
Gnd  
VGATE  
VIN  
500  
1W  
Gate  
1nF  
S1  
S2  
I5  
VS  
July 2000  
3
MIC5011  
MIC5011  
Micrel  
Typical Characteristics (Continued)  
DC Gate Voltage  
above Supply  
Supply Current  
12  
14  
12  
10  
8
10  
8
6
6
4
4
2
0
2
0
0
5
10 15 20 25 30 35  
0
3
6
9
12  
15  
SUPPLY VOLTAGE (V)  
SUPPLY VOLTAGE (V)  
High-side Turn-on Time*  
High-side Turn-on Time*  
350  
300  
250  
200  
150  
100  
50  
140  
120  
100  
80  
C
=1 nF  
GATE  
C
GATE  
=1 nF  
C2=1 nF  
60  
40  
20  
0
0
0
3
6
9
12  
15  
0
3
6
9
12  
15  
SUPPLY VOLTAGE (V)  
SUPPLY VOLTAGE (V)  
High-side Turn-on Time*  
High-side Turn-on Time*  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
C
=10 nF  
GATE  
C
GATE  
=10 nF  
C2=1 nF  
0
0
0
3
6
9
12  
15  
0
3
6
9
12  
15  
SUPPLY VOLTAGE (V)  
SUPPLY VOLTAGE (V)  
+
+
* Time for gate to reach V + 5V in test circuit with VS = V 5V.  
MIC5011  
4
July 2000  
MIC5011  
Micrel  
Typical Characteristics (Continued)  
Low-side Turn-on Time  
for Gate = 5V  
Low-side Turn-on Time  
for Gate = 5V  
1000  
1000  
300  
100  
30  
C2=1 nF  
300  
C
GATE  
=10 nF  
C
GATE  
=10 nF  
100  
30  
10  
3
10  
C
GATE  
=1 nF  
C
GATE  
=1 nF  
3
1
1
0
3
6
9
12  
15  
0
3
6
9
12  
15  
SUPPLY VOLTAGE (V)  
SUPPLY VOLTAGE (V)  
Low-side Turn-on Time  
for Gate = 10V  
Low-side Turn-on Time  
for Gate = 10V  
3000  
1000  
300  
100  
30  
3000  
1000  
300  
100  
30  
C2=1 nF  
C
GATE  
=10 nF  
C
GATE  
=10 nF  
C
GATE  
=1 nF  
C
GATE  
=1 nF  
10  
10  
3
0
3
3
6
9
12  
15  
0
3
6
9
12  
15  
SUPPLY VOLTAGE (V)  
SUPPLY VOLTAGE (V)  
Turn-on Time  
Turn-off Time  
2.0  
1.75  
1.5  
50  
40  
C
GATE  
=10 nF  
30  
20  
1.25  
1.0  
C
=1 nF  
12  
10  
GATE  
0.75  
0.5  
0
0
3
6
9
15  
25  
0
25  
50 75 100 125  
SUPPLY VOLTAGE (V)  
DIE TEMPERATURE (°C)  
July 2000  
5
MIC5011  
MIC5011  
Micrel  
Charge Pump  
Charge Pump  
Output Current  
Output Current  
250  
200  
150  
100  
50  
1.0  
0.8  
+
V
=V  
GATE  
+
V
=V  
GATE  
0.6  
0.4  
+
V
=V +5V  
GATE  
+
=V +5V  
V
GATE  
0.2  
0
C2=1 nF  
VS=V 5V  
+
VS=V 5V  
+
0
0
5
10  
15 20 25  
30  
0
5
10  
15 20 25  
30  
SUPPLY VOLTAGE (V)  
SUPPLY VOLTAGE (V)  
Block Diagram  
Ground V+  
C1 Com C2  
1
8
7
6
4
MIC5011  
CHARGE  
PUMP  
5 Gate  
500  
12.5V  
Source  
LOGIC  
2
Input  
3
Applications Information  
Functional Description (Refer to Block Diagram)  
The charge pump incorporates a 100kHz oscillator and on-  
chip pump capacitors capable of charging 1nF to 5V above  
supply in 60µs typical. With the addition of 1nF capacitors  
at C1 and C2, the turn-on time is reduced to 25µs typical  
(see Figure 3). The charge pump is capable of pumping the  
gate up to over twice the supply voltage. For this reason, a  
zener clamp (12.5V typical) is provided between the gate  
The MIC5011 functions are controlled via a logic block  
connected to the input pin 2. When the input is low, all  
functions are turned off for low standby current and the gate  
of the power MOSFET is also held low through 500to an  
N-channel switch. When the input is taken above the turn-  
on threshold (3.5V typical), the N-channel switch turns off  
and the charge pump is turned on to charge the gate of the  
power FET.  
pin 5 and source pin 3 to prevent exceeding the V rating  
GS  
of the MOSFET at high supplies.  
MIC5011  
6
July 2000  
MIC5011  
Micrel  
Applications Information (Continued)  
atgroundpotential. TheMOSFETisforcedintoconduction,  
Construction Hints  
and it dissipates the energy stored in the load inductance.  
The MIC5011 source pin (3) is designed to withstand this  
negativeexcursionwithoutdamage. Externalclampdiodes  
are unnecessary.  
High current pulse circuits demand equipment and assem-  
bly techniques that are more stringent than normal, low  
current lab practices. The following are the sources of  
pitfalls most often encountered during prototyping. Sup-  
plies: many bench power supplies have poor transient  
response. Circuits that are being pulse tested, or those that  
operate by pulse-width modulation will produce strange  
results when used with a supply that has poor ripple  
rejection, or a peaked transient response. Always monitor  
thepowersupplyvoltagethatappearsatthedrainofahigh-  
sidedriver(orthesupplysideoftheloadinalow-sidedriver)  
with an oscilloscope. It is not uncommon to find bench  
power supplies in the 1 kW class that overshoot or under-  
shoot by as much as 50% when pulse loaded. Not only will  
theloadcurrentandvoltagemeasurementsbeaffected,but  
it is possible to over-stress various componentsespe-  
cially electrolytic capacitorswith possibly catastrophic  
results. A 10µF supply bypass capacitor at the chip is  
recommended.  
Low-Side Driver (Figure 2). A key advantage of the low-  
side topology is that the load supply is limited only by the  
MOSFET BVDSS rating. Clamping may be required to  
protect the MOSFET drain terminal from inductive switch-  
ing transients. The MIC5011 supply should be limited to  
15V in low-side topologies, otherwise a large current will be  
forced through the gate clamp zener.  
Low-side drivers constructed with the MIC501X family are  
also fast; the MOSFET gate is driven to near supply  
immediatelywhencommandedON.Typicalcircuitsachieve  
10V enhancement in 10µs or less on a 12 to 15V supply.  
Modifying Switching Times (Figure 3). High-side switch-  
ingtimescanbeimprovedbyafactorof2ormorebyadding  
external charge pump capacitors of 1nF each. In cost-  
sensitiveapplications,omitC1(C2hasadominanteffecton  
speed).  
Residual Resistances: Resistances in circuit connections  
may also cause confusing results. For example, a circuit  
may employ a 50mpower MOSFET for low drop, but  
careless construction techniques could easily add 50 to  
100mresistance. Do not use a socket for the MOSFET. If  
the MOSFET is a TO-220 type package, make high-current  
drain connections to the tab. Wiring losses have a profound  
effect on high-current circuits. A floating millivoltmeter can  
identify connections that are contributing excess drop un-  
der load.  
Do not add external capacitors to the MOSFET gate. Add a  
resistor (1kto 51k) in series with the gate to slow down  
the switching time.  
14.4V  
ON  
+
MIC5011  
10µF  
8
7
6
5
1
2
3
4
V+  
C1  
1nF  
1nF  
Input  
Source  
Gnd  
Com  
C2  
Control Input  
Circuit Topologies  
The MIC5011 is suited for use with standard MOSFETs in  
high-orlow-sidedriverapplications.Inaddition,theMIC5011  
works well in applications where, for faster switching times,  
the supply is bootstrapped from the MOSFET source out-  
put.Lowvoltage,high-sidedrivers(suchasshowninFigure  
1) are the slowest; their speed is reflected in the gate turn-  
on time specifications. The fastest drivers are the low-side  
and bootstrapped high-side types (Figures 2 and 4). Load  
current switching times are often much faster than the time  
to full gate enhancement, depending on the circuit type, the  
MOSFET, and the load. Turn-off times are essentially the  
Gate  
IRF531  
OFF  
LOAD  
Figure 3. High Side Driver with  
External Charge Pump Capacitors  
Bootstrapped High-Side Driver (Figure 4). The speed of  
a high-side driver can be increased to better than 10µs by  
bootstrapping the supply off of the MOSFET source. This  
topology can be used where the load is pulse-width modu-  
lated (100Hz to 20kHz), or where it is energized continu-  
ously. The Schottky barrier diode prevents the MIC5011  
supply pin from dropping more than 200mV below the drain  
supply, and it also improves turn-on time on supplies of less  
than 10V. Since the supply current in the offstate is only  
a small leakage, the 100nF bypass capacitor tends to  
remain charged for several seconds after the MIC5011 is  
turnedoff.InaPWMapplicationthechipsupplyissustained  
at a higher potential than the system supply, which im-  
proves switching time.  
sameforallcircuits(lessthan10µstoV =1V).Thechoice  
GS  
of one topology over another is based on a combination of  
considerations including speed, voltage, and desired sys-  
tem characteristics.  
High-Side Driver (Figure 1). The high-side topology works  
+
well down to V = 7V with standard MOSFETs. From 4.75  
to 7V supply, a logic-level MOSFET can be substituted  
since the MIC5011 will not reach 10V gate enhancement  
(10Visthemaximumratingforlogic-compatibleMOSFETs).  
High-side drivers implemented with MIC501X drivers are  
self-protected against inductive switching transients. Dur-  
ing turn-off an inductive load will force the MOSFET source  
5Vormorebelowground, whiletheMIC5011holdsthegate  
July 2000  
7
MIC5011  
MIC5011  
Micrel  
Applications Information (Continued)  
7 to 15V  
1N5817  
1N4001 (2)  
100nF  
+
15V  
10µF  
MIC5011  
33k  
1
2
3
4
8
7
6
5
33pF  
V+  
C1  
Com  
C2  
To MIC5011  
Input  
100kΩ  
Control Input  
Input  
Source  
Gnd  
MPSA05  
4N35  
Gate  
IRF540  
10mA  
Control Input  
100kΩ  
1kΩ  
LOAD  
Figure 5. Improved  
Opto-Isolator Performance  
Figure 4. Bootstrapped  
High-Side Driver  
Opto-Isolated Interface (Figure 5). Although the MIC5011  
has no special input slew rate requirement, the lethargic  
transitions provided by an opto-isolator may cause oscilla-  
tions on the rise and fall of the output. The circuit shown  
accelerates the input transitions from a 4N35 opto-isolator  
by adding hysteresis. Opto-isolators are used where the  
control circuitry cannot share a common ground with the  
MIC5011 and high-current power supply, or where the  
control circuitry is located remotely. This implementation is  
intrinsically safe; if the control line is severed the MIC5011  
will turn OFF.  
ible with control boxes such as the CR2943 series (GE).  
The circuit is configured so that if both switches close  
simultaneously, the offbutton has precedence.  
Thisapplicationalsoillustrateshowtwo(ormore)MOSFETs  
canbeparalleled. Thisreducestheswitchdrop, anddistrib-  
utes the switch dissipation into multiple packages.  
High-VoltageBootstrap(Figure7).AlthoughtheMIC5011  
is limited to operation on 4.75 to 32V supplies, a floating  
bootstrap arrangement can be used to build a high-side  
switchthatoperatesonmuchhighervoltages.TheMIC5011  
and MOSFET are configured as a low-side driver, but the  
load is connected in series with ground.  
Industrial Switch (Figure 6). The most common manual  
control for industrial loads is a push button on/off switch.  
The onbutton is physically arranged in a recess so that in  
apanicsituationtheoffbutton, whichextendsoutfromthe  
control box, is more easily pressed. This circuit is compat-  
Power for the MIC5011 is supplied by a charge pump. A  
20kHz square wave (15Vp-p) drives the pump capacitor  
and delivers current to a 100µF storage capacitor. A zener  
24V  
+
10µF  
100k  
MIC5011  
1
8
7
6
5
ON  
V+  
C1  
Com  
C2  
CR2943-NA102A  
(GE)  
2
3
4
Input  
Source  
Gnd  
OFF  
Gate  
IRFP044 (2)  
330kΩ  
LOAD  
Figure 6. 50-Ampere  
Industrial Switch  
MIC5011  
8
July 2000  
MIC5011  
Micrel  
Applications Information (Continued)  
15V  
+
100µF  
90V  
1N4746  
MIC5011  
1
2
3
4
8
33k  
V+  
C1  
Com  
C2  
1N4003 (2)  
33pF  
7
6
5
Input  
Source  
Gnd  
MPSA05  
100kΩ  
1nF  
Gate  
IRFP250  
4N35  
10mA  
Control Input  
100kΩ  
1kΩ  
1/4 HP, 90V  
5BPB56HAA100  
(GE)  
M
100nF  
200V  
1N4003  
15Vp-p, 20kHz  
Squarewave  
Figure 7. High-Voltage  
Bootstrapped Driver  
diode limits the supply to 18V. When the MIC5011 is off,  
power is supplied by a diode connected to a 15V supply.  
The circuit of Figure 5 is put to good use as a barrier  
between low voltage control circuitry and the 90V motor  
supply.  
Cross conduction increases output device power dissipa-  
tion. Speed is also important, since PWM control requires  
the outputs to switch in the 2 to 20kHz range.  
ThecircuitofFigure8utilizesfastconfigurationsforboththe  
top- and bottom-side drivers. Delay networks at each input  
provide a 2 to 3µs dead time effectively eliminating cross  
conduction. Two of these circuits can be connected to-  
gether to form an H-bridge for locked antiphase or sign/  
magnitude control.  
Half-BridgeMotorDriver(Figure8).Closedloopcontrolof  
motor speed requires a half-bridge driver. This topology  
presents an extra challenge since the two output devices  
should not cross conduct (shoot-through) when switching.  
15V  
1N5817  
1N4001 (2)  
100nF  
+
1N4148  
MIC5011  
1
2
3
4
8
7
6
5
1µF  
V+  
C1  
Com  
C2  
Input  
Source  
Gnd  
220pF  
22k  
Gate  
IRF541  
PWM  
INPUT  
15V  
+
12V,  
10A Stalled  
M
10µF  
MIC5011  
8
7
6
5
1
2
3
4
V+  
C1  
10kΩ  
Input  
Source  
Gnd  
Com  
C2  
22kΩ  
1nF  
Gate  
IRF541  
2N3904  
Figure 8. Half-Bridge  
Motor Driver  
July 2000  
9
MIC5011  
MIC5011  
Micrel  
Applications Information (Continued)  
12V  
12V  
+
10µF  
MIC5011  
8
1
2
3
4
+
10µF  
V+  
C1  
MIC5011  
7
6
5
Input  
Source  
Gnd  
Com  
C2  
1
2
3
4
8
7
6
5
V+  
C1  
Com  
C2  
R
100k  
1N4148  
Input  
Source  
Gnd  
330k  
330kΩ  
Gate  
IRFZ44  
+
47µF  
IRFZ44  
Gate  
1N4148  
10kΩ  
100nF  
100Ω  
OUTPUT  
(Delay=2.5s)  
M
T
12V  
START  
RUN  
Figure 9. 30 Ampere  
Time-Delay Relay  
STOP  
Time-Delay Relay (Figure 9). The MIC5011 forms the  
basis of a simple time-delay relay. As shown, the delay  
commenceswhenpowerisapplied, butthe100k/1N4148  
couldbeindependentlydrivenfromanexternalsourcesuch  
as a switch or another high-side driver to give a delay  
relative to some other event in the system. Hysteresis has  
been added to guarantee clean switching at turn-on.  
Figure 10. Motor Stall  
Shutdown  
Motor Driver with Stall Shutdown (Figure 10). Tachom-  
eter feedback can be used to shut down a motor driver  
circuit when a stall condition occurs. The control switch is a  
3-way type; the STARTposition is momentary and forces  
the driver ON. When released, the switch returns to the  
RUNposition, and the tachometer's output is used to hold  
the MIC5011 input ON. If the motor slows down, the tach  
output is reduced, and the MIC5011 switches OFF. Resis-  
tor Rsets the shutdown threshold.  
15V  
Electronic Governor (Figure 11). The output of an ac  
tachometercanbeusedtoformaPWMlooptomaintainthe  
speed of a motor. The tachometer output is rectified,  
partially filtered, and fed back to the input of the MIC5011.  
When the motor is stalled there is no tachometer output,  
and MIC5011 input is pulled high delivering full power to the  
motor.Ifthemotorspinsfastenough,thetachometeroutput  
is sufficient to pull the MIC5011 input low, shutting the  
output off. Since the rectified waveform is only partially  
filtered, the input oscillates around its threshold causing the  
MIC5011 to switch on and off at the frequency of the  
tachometer signal. A PWM action results since the average  
dc voltage at the input decreases as the motor spins faster.  
The 1kpotentiometer is used to set the running speed of  
themotor. Loopgain(andspeedregulation)isincreasedby  
increasing the value of the 100nF filter capacitor.  
+
10µF  
MIC5011  
330k  
8
7
6
5
1
2
3
4
V+  
C1  
330kΩ  
Input  
Source  
Gnd  
1nF  
Com  
C2  
Gate  
IRF541  
1N4148  
100nF  
M
T
15V  
1kΩ  
Theperformanceofsuchaloopisimprecise, butstableand  
inexpensive.AmoreelaborateloopwouldconsistofaPWM  
controller and a half-bridge.  
Figure 11. Electronic Governor  
MIC5011  
10  
July 2000  
MIC5011  
Micrel  
ON. C1 is discharged, and C2 is charged to supply through  
Applications Information (Continued)  
Q5. For the second phase Q4 turns off and Q3 turns on,  
pushing pin C2 above supply (charge is dumped into the  
gate). Q3 also charges C1. On the third phase Q2 turns off  
and Q1 turns on, pushing the common point of the two  
capacitors above supply. Some of the charge in C1 makes  
its way to the gate. The sequence is repeated by turning Q2  
and Q4 back on, and Q1 and Q3 off.  
Gate Control Circuit  
When applying the MIC5011, it is helpful to understand the  
operation of the gate control circuitry (see Figure 12). The  
gate circuitry can be divided into two sections: 1) charge  
pump (oscillator, Q1-Q5, and the capacitors) and 2) gate  
turn-off switch (Q6).  
In a low-side application operating on a 12 to 15V supply,  
theMOSFETisfullyenhancedbytheactionofQ5alone.On  
supplies of more than approximately 14V, current flows  
directly from Q5 through the zener diode to ground. To  
prevent excessive current flow, the MIC5011 supply should  
be limited to 15V in low-side applications.  
When the MIC5011 is in the OFF state, the oscillator is  
turned off, thereby disabling the charge pump. Q5 is also  
turned off, and Q6 is turned on. Q6 holds the gate pin (G) at  
ground potential which effectively turns the external MOS-  
FET off.  
Q6 is turned off when the MIC5011 is commanded on, and  
Q5 pulls the gate up to supply (through 2 diodes). Next, the  
chargepumpbeginssupplyingcurrenttothegate. Thegate  
acceptschargeuntilthegate-sourcevoltagereaches12.5V  
and is clamped by the zener diode.  
The action of Q5 makes the MIC5011 operate quickly in  
low-side applications. In high-side applications Q5  
prechargestheMOSFETgatetosupply, leavingthecharge  
pump to carry the gate up to full enhancement 10V above  
supply. Bootstrapped high-side drivers are as fast as low-  
side drivers since the chip supply is boosted well above the  
drain at turn-on.  
A 2-output, three-phase clock switches Q1-Q4, providing a  
quasi-tripling action. During the initial phase Q4 and Q2 are  
+
V
Q5  
Q3  
Q1  
125pF  
125pF  
C2  
C1  
COM  
C1  
C2  
Q2  
Q4  
G
S
100 kHz  
OSCILLATOR  
500  
GATE CLAMP  
ZENER  
12.5V  
OFF  
ON  
Q6  
Figure 12. Gate Control  
Circuit Detail  
July 2000  
11  
MIC5011  
MIC5011  
Micrel  
Package Information  
PIN 1  
DIMENSIONS:  
INCH (MM)  
0.380 (9.65)  
0.370 (9.40)  
0.255 (6.48)  
0.245 (6.22)  
0.135 (3.43)  
0.125 (3.18)  
0.300 (7.62)  
0.013 (0.330)  
0.010 (0.254)  
0.380 (9.65)  
0.320 (8.13)  
0.018 (0.57)  
0.100 (2.54)  
0.130 (3.30)  
0.0375 (0.952)  
8-Pin Plastic DIP (N)  
0.026 (0.65)  
MAX)  
PIN 1  
0.157 (3.99)  
0.150 (3.81)  
DIMENSIONS:  
INCHES (MM)  
0.020 (0.51)  
0.013 (0.33)  
0.050 (1.27)  
TYP  
45°  
0.0098 (0.249)  
0.0040 (0.102)  
0.010 (0.25)  
0.007 (0.18)  
0°8°  
0.197 (5.0)  
0.189 (4.8)  
0.050 (1.27)  
0.016 (0.40)  
SEATING  
PLANE  
0.064 (1.63)  
0.045 (1.14)  
0.244 (6.20)  
0.228 (5.79)  
8-Pin SOP (M)  
MICREL INC. 1849 FORTUNE DRIVE SAN JOSE, CA 95131 USA  
TEL + 1 (408) 944-0800 FAX + 1 (408) 944-0970 WEB http://www.micrel.com  
This information is believed to be accurate and reliable, however no responsibility is assumed by Micrel for its use nor for any infringement of patents  
or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent right of Micrel Inc.  
© 1998 Micrel Incorporated  
MIC5011  
12  
July 2000  

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