WPS512K8C-20RJMGA [MERCURY]
Standard SRAM, 512KX8, 20ns, CMOS, PDSO36, ROHS COMPLIANT, PLASTIC, SOJ-36;
| 型号： | WPS512K8C-20RJMGA |
| 厂家： | 
MERCURY UNITED ELECTRONICS INC |
| 描述： | Standard SRAM, 512KX8, 20ns, CMOS, PDSO36, ROHS COMPLIANT, PLASTIC, SOJ-36 静态存储器 光电二极管 |
| 文件： | 总9页 (文件大小：837K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EDI88512CA-XMXG
WPS512K8X-XRJXG
512Kx8 Plastic Monolithic SRAM CMOS
WEDC's ruggedized plastic 512Kx8 SRAM that allows the user to
capitalize on the cost advantage of using a plastic component while
not sacrificing all of the reliability available in a full military device.
FEATURES
512Kx8 bit CMOS Static
Random Access Memory
Extended temperature testing is performed with the test patterns
developed for use on WEDC’s fully compliant 512Kx8 SRAMs.
WEDC fully characterizes devices to determine the proper test
patterns for testing at temperature extremes. This is critical because
the operating characteristics of device change when it is operated
beyond the commercial guarantee a device that operates reliably
in the field at temperature extremes. Users of WEDC’s ruggedized
plastic benefit from WEDC’s extensive experience in characterizing
SRAMs for use in military systems.
• Access Times of 17, 20, 25ns
• Data Retention Function (LPA version)
• Extended Temperature Testing
• Data Retention Functionality Testing
36 lead JEDEC Approved Revolutionary Pinout
• Plastic SOJ (Package 319)
Single +5V (±10%) Supply Operation
RoHS compliant
WEDC ensures Low Power devices will retain data in Data
Retention mode by characterizing the devices to determine the
appropriate test conditions. This is crucial for systems operating
at -40°C or below and using dense memories such as 512Kx8s.
WEDC’s ruggedized plastic SOJ is footprint compatible with
WEDC’s full military ceramic 36 pin SOJ.
FIGURE 1 – PIN CONFIGURATION
TOP VIEW
PIN Description
I/O0-7
A0-18
WE#
CS#
OE#
VCC
Data Inputs/Outputs
Address Inputs
Write Enables
Chip Selects
A0
A1
1
2
3
4
5
6
7
8
9
36 NC
35 A18
34 A17
33 A16
32 A15
31 OE#
30 I/O7
29 I/O6
28 VSS
27 VCC
26 I/O5
25 I/O4
24 A14
23 A13
22 A12
21 A11
20 A10
19 NC
Output Enable
Power (+5V ±10%)
Ground
A2
A3
VSS
A4
NC
Not Connected
CS#
I/O0
I/O1
VCC
BLOCK DIAGRAM
36pin
VSS 10
I/O2 11
I/O3 12
WE# 13
A5 14
Revolutionary
Memory Array
A6 15
A7 16
Address
Buffer
Address
Decoder
I/O
Circuits
AØ-18
I/OØ-7
A8 17
A9 18
WE#
CS#
OE#
Microsemi Corporation reserves the right to change products or specifications without notice.
May 2014 © 2014 Microsemi Corporation. All rights reserved.
Rev. 11
1
Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp
EDI88512CA-XMXG
WPS512K8X-XRJXG
ABSOLUTE MAXIMUM RATINGS
TRUTH TABLE
Mode
Standby
Output
High Z
Power
Icc2, Icc3
Icc1
Parameter
Unit
OE#
X
CS#
H
WE#
X
Voltage on any pin relative to Vss
Operating Temperature TA (Ambient)
Commercial
-0.5 to 7.0
V
Output Deselect
Read
High Z
H
L
H
0 to +70
-40 to +85
-55 to +125
-65 to +150
1.5
°C
°C
°C
°C
W
Data Out
Data In
Icc1
L
L
H
Industrial
Write
Icc1
X
L
L
Military
Storage Temperature, Plastic
Power Dissipation
Output Current
20
mA
°C
RECOMMENDED OPERATING CONDITIONS
Junction Temperature, TJ
175
Parameter
Symbol
VCC
Min
4.5
0
Typ
5.0
0
Max
5.5
Unit
V
NOTE:
Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions greater than
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
Supply Voltage
Supply Voltage
Input High Voltage
Input Low Voltage
VSS
0
V
VIH
2.0
-0.5
—
VCC + 0.5
+0.8
V
VIL
—
V
CAPACITANCE
TA = +25°C
Parameter
Address Lines
Data Lines
Symbol
CI
Condition
Max Unit
VIN = Vcc or Vss, f = 1.0MHz
VIN = Vcc or Vss, f = 1.0MHz
8
8
pF
pF
CO
These parameters are sampled, not 100% tested.
DC CHARACTERISTICS
VCC = 5V, VSS = 0V, -55°C ≤ TA ≤ +125°C
Parameter
Symbol
ILI
Conditions
Min
Max
Units
Input Leakage Current
Output Leakage Current
Operating Supply Current
Standby Current
VCC = 5.5, VIN = VSS to VCC
10
10
μA
μA
mA
mA
V
ILO
CS# = VIL, OE# = VIH, VOUT = VSS to VCC
CS# = VIL, OE# = VIH, f = 5MHz, VCC = 5.5
CS# = VIH, OE# = VIH, f = 5MHz, VCC = 5.5
IOH = -4.0mA, VCC = 4.5
ICC
180
15
ISB
Output High Volltage
Output Low Voltage
VOH
VOL
2.4
IOL = 8.0mA, VCC = 4.5
0.4
V
NOTE: DC test conditions: VIL = 0.3V, VIH = VCC -0.3V
AC TEST CONDITIONS
Figure 1
Figure 2
Input Pulse Levels
Input Rise and Fall Times
VSS to 3.0V
5ns
Vcc
Vcc
Input and Output Timing Levels
Output Load
1.5V
480Ω
480Ω
5pF
Figure 1
NOTE: For tEHQZ, tGHQZ and tWLQZ, CL = 5pF (Figure 2)
Q
Q
30pF
255Ω
255Ω
Microsemi Corporation reserves the right to change products or specifications without notice.
May 2014 © 2014 Microsemi Corporation. All rights reserved.
Rev. 11
2
Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp
EDI88512CA-XMXG
WPS512K8X-XRJXG
AC CHARACTERISTICS – READ CYCLE
VCC = 5.0V, VSS = 0V, 0°C ≤ TA ≤ +70°C
Symbol
17ns
20ns
25ns
Parameter
JEDEC
Alt.
tRC
Min
Max
Min
Max
Min
Max
Units
ns
Read Cycle Time
tAVAV
17
20
25
Address Access Time
tAVQV
tELQV
tELQX
tEHQZ
tAVQX
tGLQV
tGLQX
tGHQZ
tAA
17
17
20
20
25
25
ns
Chip Enable Access Time
tACS
tCLZ
tCHZ
tOH
ns
Chip Enable to Output in Low Z (1)
Chip Disable to Output in High Z (1)
Output Hold from Address Change
Output Enable to Output Valid
Output Enable to Output in Low Z (1)
Output Disable to Output in High Z(1)
1. This parameter is guaranteed by design but not tested.
3
0
0
3
0
0
3
0
0
ns
7
8
7
8
10
8
10
12
10
ns
ns
tOE
ns
tOLZ
tOHZ
0
0
0
0
0
0
ns
ns
AC CHARACTERISTICS – WRITE CYCLE
VCC = 5.0V, VSS = 0V, 0°C ≤ TA ≤ +70°C
Symbol
17ns
20ns
25ns
Parameter
Write Cycle Time
JEDEC
Alt.
Min
Max
Min
Max
Min
Max
Units
tAVAV
tWC
17
20
25
ns
Chip Enable to End of Write
tELWH
tELEH
tCW
tCW
14
14
15
15
17
17
ns
ns
Address Setup Time
Address Valid to End of Write
Write Pulse Width
tAVWL
tAVEL
tAS
tAS
0
0
0
0
0
0
ns
ns
tAVWH
tAVEH
tAW
tAW
14
14
15
15
17
17
ns
ns
tWLWH
tWLEH
tWP
tWP
14
14
15
15
17
17
ns
ns
Write Recovery Time
Data Hold Time
tWHAX
tEHAX
tWR
tWR
0
0
0
0
0
0
ns
ns
tWHDX
tEHDX
tDH
tDH
0
0
0
0
0
0
ns
ns
Write to Output in High Z (1)
Data to Write Time
tWLQZ
tWHZ
0
8
0
8
0
10
ns
tDVWH
tDVEH
tDW
tDW
8
8
10
10
12
12
ns
ns
Output Active from End of Write (1)
tWHQX
tWLZ
0
0
0
ns
1. This parameter is guaranteed by design but not tested.
Microsemi Corporation reserves the right to change products or specifications without notice.
May 2014 © 2014 Microsemi Corporation. All rights reserved.
Rev. 11
3
Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp
EDI88512CA-XMXG
WPS512K8X-XRJXG
FIGURE 2 – TIMING WAVEFORM — READ CYCLE
tAVAV
ADDRESS
tAVAV
tAVQV
ADDRESS
DATA I/O
ADDRESS 1
ADDRESS 2
CS#
tEHQZ
tELQV
tELQX
tAVQV
tAVQX
OE#
DATA 1
DATA 2
tGLQV
tGLQX
tGHQZ
DATA OUT
READ CYCLE 1 (WE# HIGH; OE#, CS# LOW)
READ CYCLE 2 (WE# HIGH)
FIGURE 3 – WRITE CYCLE — WE# CONTROLLED
tAVAV
ADDRESS
tAVWH
tWHAX
tELWH
CS#
tAVWL
tWLWH
WE#
tDVWH
tWHDX
DATA IN
DATA VALID
tWLQZ
tWHQX
HIGH Z
DATA OUT
WRITE CYCLE 1, WE# CONTROLLED
FIGURE 4 – WRITE CYCLE — CS# CONTROLLED
tAVAV
ADDRESS
tAVEH
tELEH
tEHAX
CS#
tAVEL
tWLEH
WE#
tDVEH
tEHDX
DATA IN
DATA VALID
HIGH Z
DATA OUT
WRITE CYCLE 2, CS# CONTROLLED
Microsemi Corporation reserves the right to change products or specifications without notice.
May 2014 © 2014 Microsemi Corporation. All rights reserved.
Rev. 11
4
Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp
EDI88512CA-XMXG
WPS512K8X-XRJXG
DATA RETENTION CHARACTERISTICS (EDI88512LPA ONLY)
-55°C ≤ TA ≤ +125°C
Characteristic
Sym
Conditions
Min
Typ
Max
Units
Low Power Version only
Data Retention Voltage
Data Retention Quiescent Current
VDD
ICCDR
VDD = 2.0V
CS# ≥ VDD -0.2V
2
–
–
–
–
15
V
mA
Chip Disable to Data Retention Time
Operation Recovery Time
TCDR
TR
VIN ≥ VDD -0.2V
or VIN ≤ 0.2V
0
–
–
–
ns
ns
TAVAV
FIGURE 5 – DATA RETENTION — CS# CONTROLLED
Data Retention Mode
4.5V
4.5V
Vcc
VDD
tCDR
tR
CS#
CS# = VDD -0.2V
DATA RETENTION, CS# CONTROLLED
Microsemi Corporation reserves the right to change products or specifications without notice.
May 2014 © 2014 Microsemi Corporation. All rights reserved.
Rev. 11
5
Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp
EDI88512CA-XMXG
WPS512K8X-XRJXG
FIGURE 6 – NORMALIZED OPERATING GRAPHS
rite ulse idth vs. emp.
CC1 (20ns) vs emp
14
13
12
11
10
220
210
200
1
1
0
0
7
6
170
160
-55
25
125
-55
25
125
emp. (C)
emp. (C)
A
vs. emp
CC3vs. emp
10
1
22
20
1
1 0
16
14
12
0.1
0.01
-55
25
emp. (C)
125
-55
25
emp. (C)
125
CC R vs. emp
10
1
ormali ed curves are o ered
as a service to our customers.
hey are not to e construed
as a guarantee o operating
characterics.
0.1
Characteristics o actual
devices will vary.
0.01
0.001
-55
25
125
emp. (C)
R
2
R
3
Microsemi Corporation reserves the right to change products or specifications without notice.
May 2014 © 2014 Microsemi Corporation. All rights reserved.
Rev. 11
6
Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp
EDI88512CA-XMXG
WPS512K8X-XRJXG
PACKAGE 319: 36 LEAD, PLASTIC SMALL OUTLINE J-LEAD (SOJ)
0.920
0.930
0.395
0.405
0.026
0.032
Pin 1 Indicator
0.360 0.435
0.380 0.445
0.027
min.
0.148
max.
0.375
TYP.
0.050
TYP.
0.015
0.021
ALL DIMENSIONS ARE IN INCHES
Microsemi Corporation reserves the right to change products or specifications without notice.
May 2014 © 2014 Microsemi Corporation. All rights reserved.
Rev. 11
7
Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp
EDI88512CA-XMXG
WPS512K8X-XRJXG
ORDERING INFORMATION
EDI 8 8512 CA - X X X G
MICROSEMI CORPORATION:
SRAM:
ORGANIZATION, 512Kx8:
TECHNOLOGY:
CA
= CMOS Standard Power
LPA = Low Power
ACCESS TIME (ns):
PACKAGE TYPE:
M
RJ
=
=
36 lead Plastic SOJ
Relvoutionary
DEVICE GRADE:
Military Grade*
M = Military Screened -55°C to +125°C
B
=
I
C
=
=
Industrial
Commercial
-40°C to +85°C
0°C to +70°C
RoHS COMPLIANT:
*This product is processed the same as the 5962-XXXXXMXX product but all test and mechanical requirements are per the Microsemi data sheet.
ORDERING INFORMATION
W P S 512K 8 X X - XXX RJ X G A
MICROSEMI CORPORATION:
PLASTIC PLUS®:
SRAM:
ORGANIZATION, 512K x 8:
POWER:
Blank = Standard Power
L = Low Power
IMPROVEMENT MARK:
B
T
C
=
=
=
Burn-in
Temperature Cycling
Burn-in and Temperature Cycle
ACCESS TIME (ns):
PACKAGE:
RJ = Revolutionary
DEVICE GRADE:
M = Military Temperature
-55°C to +125°C
I
= Industrial Temperature -40°C to +85°C
RoHS COMPLIANT:
SOLDER DIPPED:
Microsemi Corporation reserves the right to change products or specifications without notice.
May 2014 © 2014 Microsemi Corporation. All rights reserved.
Rev. 11
8
Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp
EDI88512CA-XMXG
WPS512K8X-XRJXG
Document Title
512K x 8 Plastic Monolithic SRAM CMOS
Revision History
Rev #
History
Release Date Status
Rev 7
Added RoHS compliance
November 2008
Final
Rev 8
Changes (Pg. 2, 8)
February 2009
Final
8.1 Add solder dipped to package options
8.2 Change CI to 8pF
8.3 Change VIH to 2.0V and VIL to -0.5V
Rev 9
Changes (Pg. 9)
March 2009
February 2011
May 2014
Final
Final
Final
9.1 Change document title: 512K x 8 Plastic Monolithic SRAM CMOS
Rev 10
Rev 11
Changes (Pg. 1-9)
10.1 Change document layout from White Electronic Designs to Microsemi
Changes (Pg. 8)
11.1 Changed EDI88512CA-XMXG Device Grade "B" description from
"MIL-STD-883 Compliant" to "Military Grade*."
Microsemi Corporation reserves the right to change products or specifications without notice.
May 2014 © 2014 Microsemi Corporation. All rights reserved.
Rev. 11
9
Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp
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