SS110F [MDD]
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER;
| 型号： | SS110F |
| 厂家： | 
Chendahang Electronics Co., Ltd |
| 描述： | SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
| 文件： | 总2页 (文件大小：629K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SS12F THRU SS1200F
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
1.0 Ampere
Reverse Voltage - 20 to 200 Volts Forward Current -
SMAF
FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Cathode Band
Top View
For surface mounted applications
Metal silicon junction,majority carrier conduction
Low power loss,high efficiency
0.106(2.70)
0.094(2.40)
0.063(1.60)
0.051(1.30)
Built-in strain relief,ideal for automated placement
High forward surge current capability
High temperature soldering guaranteed:
260 C/10 seconds at terminals
0.146(3.7)
0.130(3.3)
0.0091(0.23)
0.0071(0.18)
0.051(1.30)
0.043(1.10)
0.051(1.30)
0.039(1.0)
MECHANICAL DATA
Case: JEDEC SMAF molded plastic body
Terminals: leads solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight:0.0018 ounce, 0.064 grams
0.193(4.90)
0.173(4.40)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
SYMBOLS
SS18F SS110F
SS12F SS13F SS14F SS15F SS16F
SS1150F SS1200F
UNITS
MDD Catalog
Number
20
14
20
30
21
30
40
28
40
50
35
50
60
42
60
80
56
80
100
70
Maximum repetitive peak reverse voltage
Maximum RMS voltage
150
105
150
200
140
200
VOLTS
VOLTS
VOLTS
VRRM
VRMS
VDC
100
Maximum DC blocking voltage
Maximum average forward rectified current
at TL(see fig.1)
I(AV)
1.0
Amp
Peak forward surge current
IFSM
30.0
0.70
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Amps
VF
IR
0.55
0.85
Maximum instantaneous forward voltage at 1.0A
0.95
Volts
mA
Maximum DC reverse current
at rated DC blocking voltage
TA=25 C
0.5
10.0
0.2
2.0
TA=100 C
5.0
90
Typical junction capacitance (NOTE 1)
110
CJ
pF
C/W
C
Typical thermal resistance (NOTE 2)
Operating junction temperature range
RθJA
88.0
-50 to +150
-50 to +125
-50 to +150
TJ,
Storage temperature range
C
TSTG
Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas
RATINGS AND CHARACTERISTIC CURVES SS12F THRU SS1200F
FIG. 1- FORWARD CURRENT DERATING CURVE
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
30
24
18
12
1.0
0.8
0.6
0.4
0.2
0
Single Phase
Half Wave 60Hz
Resistive or
inductive Load
SS12F-SS16F
6
0
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
SS18F-SS1200F
0
25
50
75
100
125
150
175
1
10
100
AMBIENT TEMPERATURE,
C
NUMBER OF CYCLES AT 60 Hz
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
50
100
TJ=25 C
10.0
10
1
TJ=100 C
TJ=75 C
1
0.1
0.01
SS12F-SS14F
SS15F-SS16F
SS18F-SS1150F
SS1200F
0.1
TJ=25 C
0.001
0
20
40
60
80
100
PERCENT OF PEAK REVERSE VOLTAGE,%
0.01
0
0.2 0.4
0.6
0.8 1.0 1.2 1.4 1.6
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
FIG. 5-TYPICAL JUNCTION CAPACITANCE
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
400
200
100
TJ=25 C
10
1
20
SS12F-SS14F
SS15F-SS1200F
0.01
0.1
1
10
100
0.1
2
0.1
1.0
10
100
REVERSE VOLTAGE,VOLTS
t,PULSE DURATION,sec.
The cruve graph is for reference only, can't be the basis for judgment(曲线图仅供参考)!
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