BAT54T [MDD]

SCHOTTKY DIODE; 肖特基二极管
BAT54T
型号: BAT54T
厂家: Chendahang Electronics Co., Ltd    Chendahang Electronics Co., Ltd
描述:

SCHOTTKY DIODE
肖特基二极管

肖特基二极管 光电二极管
文件: 总2页 (文件大小:71K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BAT54T  
SCHOTTKY DIODE  
FEATURES  
SOD-123  
1.80(.071)  
1.40(.055)  
Low forward voltage drop  
Fast switching time  
Surface mount package ideally suited  
for automatic insertion  
3.86(0.152)  
3.56(0.145)  
2.84(0.112)  
2.54(0.100)  
.71(0.028)  
.50(0.020)  
MECHANICAL DATA  
.15(.006)  
MAX  
Case: Molded plastic body  
1.35(.053)  
.94(.037)  
Terminals: Plated leads solderable per MIL-STD-750,  
Method 2026  
Polarity: Polarity symbols marked on case  
Marking: L9  
.25(.010)  
MIN  
Dimensions in millimeters and (inches)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Maximum ratings and electrical characteristics, Single diode @TA=25C  
SYMBOLS  
UNITS  
V
PARAMETER  
DC Blocking voltage  
LIMITS  
21  
VR  
Average rectified output current  
Forward continuous current  
Repetitive peak forward current  
Forward surge current  
Power dissipation  
Termal resistance,junction to ambient air  
Junction temperature  
IO  
100  
mA  
mA  
mA  
mA  
mW  
K/W  
C
IFM  
200  
IFRM  
300  
IFSM  
600  
Pd  
RΘJA  
Tj  
200  
625  
125  
-65 to +150  
30  
Storage temperature  
Non-Repetitive peak reverse voltage  
TSTG  
VRM  
C
V
Electrical ratings @TA=25C  
SYMBOLS  
Min.  
Typ.  
Max.  
Unit  
Conditions  
PARAMETER  
Reverse breakdomn voltage  
V(BR)R  
VF1  
VF2  
VF3  
VF4  
VF5  
IR  
V
30  
IR=100uA  
IF=0.1mA  
IF=1.0mA  
IF=10mA  
IF=30mA  
IF=100mA  
VR=25V  
mV  
mV  
mV  
mV  
mV  
uA  
pF  
240  
320  
400  
500  
1000  
2.0  
Forward voltage  
Reverse current  
Capacitance between terminals  
Reverse recovery time  
CT  
10  
VR=0,f=1.0MHz  
IF=10mA,IR=10mA to 1mA  
RL=100  
trr  
5.0  
ns  
MDD ELECTRONIC  
RATINGS AND CHARACTERISTIC CURVES BAT54T  
FIG. 1- MAX.FORWARD VOLTAGE DROP  
CHARACTERISTICS(PER LEG)  
FIG. 2-TYPICAL VALUES OF REVERSE CURRENT  
VS REVERSE VOLTAGE (PER LEG)  
1
1
0.1  
Tj=150  
C
Tj=125  
Tj=100  
C
C
0.1  
Tj=150  
C
Tj=75  
Tj=50  
C
C
0.01  
Tj=125  
C
0.01  
0.001  
0.001  
Tj=25  
C
Tj=25  
C
Tj=25  
C
0.0001  
0.00001  
0
0
0.2  
0.4  
0.6  
0.8  
1
0
5
10  
15  
20  
25  
30  
35  
40  
FORWARD VOLTAGE DROP-VFM(V)  
REVERSE VOLTAGE VR (V)  
FIG. 3- TYPICAL JUNCTION CAPACITANCE  
FIG. 4- FORWARD POWER LOSS  
CHARACTERISTICS  
10  
0.4  
0.3  
0.2  
0.1  
0
RMS Limit  
Tj=25  
C
DC  
D=0.2  
D=-0.25  
D=0.75  
D=0.50  
D=0.33  
1
0
5
10  
15  
20  
25  
30  
0
0.1  
0.2  
0.3  
REVERSE VOLTAGE-VR(V)  
AVERAGE FORWARD CURRENT-IF(AV)(A)  
FIG. 5- MAX NON-REPETITIVE SURGE CURRENT  
10  
1
At any rated load condition  
and with rated vrrm applied  
following surge  
0.1  
0
100  
1000  
10000  
SQUARE WAVE PULSE  
DURATION-tP(MICROSEC)  
MDD ELECTRONIC  

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