1SA0 [MDD]
SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 200 Volts Forward Current - 1.0Ampere; 肖特基整流器反向电压 - 20到200伏特正向电流 - 1.0安培
| 型号： | 1SA0 |
| 厂家： | 
Chendahang Electronics Co., Ltd |
| 描述： | SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 200 Volts Forward Current - 1.0Ampere |
| 文件： | 总2页 (文件大小：73K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1S20 THRU 1SA0
SCHOTTKY BARRIER RECTIFIER
Reverse Voltage - 20 to 100 Volts Forward Current -
1.0 Ampere
FEATURES
R-1
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
1.0 (25.4)
MIN.
Metal silicon junction,majority carrier conduction
Low power loss,high efficiency
High forward surge current capability
High temperature soldering guaranteed:
0.102 (2.6)
0.091 (2.3)
DIA.
250 C/10 seconds,0.375”(9.5mm) lead length,
5 lbs. (2.3kg) tension
0.140(3.50)
0.114(2.90)
MECHANICAL DATA
1.0 (25.4)
MIN.
Case: R-1 molded plastic body
0.025 (0.60)
0.021 (0.50)
DIA.
Terminals: Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight:0.007 ounce, 0.20 grams
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
1S 1S
70 80
1S
90
1S
A0
1S 1S 1S
20 30 40
1S 1S
50 60
SYMBOLS
MDD Catalog
UNITS
Number
Maximum repetitive peak reverse voltage
Maximum RMS voltage
20 30 40 50 60 70 80
14 21 28 35 42 49 56
20 30 40 50 60 70 80
90 100
63 70
90 100
VOLTS
VOLTS
VOLTS
VRRM
VRMS
VDC
Maximum DC blocking voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length(see fig.1)
Peak forward surge current
I(AV)
1.0
Amp
IFSM
40.0
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Amps
VF
IR
0.55
0.70
0.5
0.85
Maximum instantaneous forward voltage at 1.0A
Volts
mA
Maximum DC reverse current
at rated DC blocking voltage
TA=25 C
TA=100 C
10.0
Typical junction capacitance (NOTE 1)
110
80
CJ
pF
C/W
C
Typical thermal resistance (NOTE 2)
Operating junction temperature range
RθJA
50.0
-65 to +125
-65 to +150
-65 to +150
TJ,
Storage temperature range
C
TSTG
Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted
MDD ELECTRONIC
RATINGS AND CHARACTERISTIC CURVES 1S20 THRU 1SA0
FIG. 1- FORWARD CURRENT DERATING CURVE
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
40
32
24
16
1
0.8
0.6
0.4
0.2
0
Single Phase
Half Wave 60Hz
Resistive or
inductive Load
1S20-1S40
1S50-1SA0
8
0
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
0
25
50
75
100
125
150
175
1
10
100
AMBIENT TEMPERATURE, C
NUMBER OF CYCLES AT 60 Hz
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
100
10
20
10
TJ=100 C
TJ=75 C
1
0.1
TJ=25 C
PULSE WIDTH=300 µs
1%DUTY CYCLE
1
0.1
0.01
1S20-1S40
1S50-1S60
1S70-1SA0
TJ=25 C
0.01
0.2
0.4
0.6
0.8
1.0 1.1
0.001
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF PEAK REVERSE VOLTAGE,%
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
FIG. 5-TYPICAL JUNCTION CAPACITANCE
100
2000
1000
1S20-1S40
1S50-1SA0
10
1
100
TJ=25 C
0.1
0.01
0.1
1
10
100
10
0.1
1.0
10
100
REVERSE VOLTAGE,VOLTS
t,PULSE DURATION,sec.
MDD ELECTRONIC
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