1N5817_V01 [MDD]
SCHOTTKY BARRIER RECTIFIER;
| 型号： | 1N5817_V01 |
| 厂家： | 
Chendahang Electronics Co., Ltd |
| 描述： | SCHOTTKY BARRIER RECTIFIER |
| 文件： | 总2页 (文件大小：583K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N5817 THRU 1N5819
Reverse Voltage - 20 to 40 Volts Forward Current - 1.0 Ampere
SCHOTTKY BARRIER RECTIFIER
DO-41
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
1.0 (25.4)
MIN.
Metal silicon junction,majority carrier conduction
Guardring for overvoltage protection
Low power loss,high efficiency
0.107 (2.7)
0.080 (2.0)
DIA.
High current capability,low forward voltage drop
High surge capability
0.205 (5.2)
0.160(4.1)
For use in low voltage,high frequency inverters, free
wheeling,and polarity protection applications
High temperature soldering guaranteed:
250°C/10 seconds,0.375”(9.5mm) lead length, 5 lbs.
(2.3kg) tension
1.0 (25.4)
MIN.
0.034 (0.86)
0.028 (0.70)
DIA.
Mechanical Data
Case : JEDEC DO-41 Molded plastic body
Terminals : Solder plated, solderable per MIL-STD-750,Method 2026
Polarity : Polarity symbol marking on body
Mounting Position: Any
Dimensions in inches and (millimeters)
Weight
: 0.012 ounce, 0.33 grams
Maximum Ratings And Electrical Characteristics
Ratings at 25°C ambient temperature unlss otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
1N5817S
1N5818S
1N5819S
Parameter
SYMBOLS
UNITS
MDD
1N5817S
20
MDD
1N5818S
30
MDD
1N5819S
40
Marking Code
V
RMM
RMS
Maximum repetitive peak reverse voltage
Maximum RMS voltage
V
V
V
V
14
20
21
30
28
40
V
DC
Maximum DC blocking voltage
Maximum average forward rectified current
I
(AV)
1.0
A
0.375”(9.5mm) lead length at TL=90
℃
Peak forward surge current
I
FSM
8.3ms single half sine-wave
A
25
superimposed onrated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0A
V
F
0.450
0.550
0.600
V
0.5
10.0
Maximum DC reverse current
at rated DC blocking voltage
TA=25℃
TA=100℃
I
R
mA
C
J
110.0
50.0
Typical junction capacitance (NOTE 1)
Typical thermal resistance (NOTE 2)
pF
℃/W
℃
R
θ
JA
T
J
,
T
STG
-65 to +150
Operating junction and storage temperature range
Note: 1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
(9.5mm)lead length,P.C.B. mounted
”
2.Thermal resistance from junction to ambient at 0.375
DN:T19822A0
https://www.microdiode.com
Rev:2019A0
Page :1
1N5817 THRU 1N5819
Reverse Voltage - 20 to 40 Volts Forward Current - 1.0 Ampere
Ratings And Characteristic Curves
FIG. 1- FORWARD CURRENT DERATING CURVE
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
30
1
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
25
20
15
10
5.0
0
0.75
RESISTIVE OR
INDUCTIVE LOAD
0.5
0.25
0
0.375” (9.5mm)
LEAD LENGTH
0
20
40
60
80
100
120
140
LEAD TEMPERATURE, C
1
10
100
NUMBER OF CYCLES AT 60 Hz
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
1,00
10
50
10
TJ=125 C
TJ=100 C
1
0.1
1
TJ=25 C
TJ=75 C
TJ=25 C
0.1
PULSE WIDTH=300 µs
1%DUTY CYCLE
0.01
0.001
0.01
0
0.2
0.4 0.6
0.8 1.0
1.2
1.4 1.6
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF PEAK REVERSE VOLTAGE,%
FIG. 5-TYPICAL JUNCTION CAPACITANCE
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
400
100
100
10
1
TJ=25 C
f=1.0MHz
Vsig=50mVp-p
0.1
0.01
0.1
1
10
100
10
0.1
1.0
10
100
REVERSE VOLTAGE,VOLTS
t,PULSE DURATION,sec.
The curve above is for reference only.
https://www.microdiode.com
Rev:2019A0
Page :2
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