1N5391_V01 [MDD]
GENERAL PURPOSE SILICON RECTIFIER;
| 型号： | 1N5391_V01 |
| 厂家： | 
Chendahang Electronics Co., Ltd |
| 描述： | GENERAL PURPOSE SILICON RECTIFIER |
| 文件： | 总2页 (文件大小：621K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N5391 THRU 1N5399
Reverse Voltage - 50 to 1000 Volts Forward Current - 1.5 Ampere
GENERAL PURPOSE SILICON RECTIFIER
DO-15
Features
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
1.0 (25.4)
MIN.
Construction utilizes void-free molded plastic technique
Low reverse leakage
0.140 (3.6)
0.104(2.6)
DIA.
High forward surge current capability
High temperature soldering guaranteed:
250°C/10 seconds,0.375”(9.5mm) lead length, 5 lbs. (2.3kg) tension
0.300(7.6)
0.230(5.8)
Mechanical Data
1.0 (25.4)
MIN.
Case : JEDEC DO-15 Molded plastic body
Terminals : Solder plated, solderable per MIL-STD-750,Method 2026
Polarity : Polarity symbol marking on body
Mounting Position: Any
0.034 (0.86)
0.028 (0.70)
DIA.
Weight
: 0.014 ounce, 0.40 grams
Dimensions in inches and (millimeters)
Maximum Ratings And Electrical Characteristics
Ratings at 25°C ambient temperature unlss otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
1N
1N
1N
1N
1N
1N
1N
Parameter
5391 5392 5393 5394 5395 5396 5397
UNITS
SYMBOLS
MDD MDD MDD MDD MDD MDD MDD
Marking Code
1N
1N
1N
1N
1N
1N
1N
5391 5392 5393 5394 5395 5396 5397
50
35
50
100
70
200
140
200
400
280
400
600
420
600
800 1000
560 700
800 1000
V
V
V
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
100
Maximum DC blocking voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length at TA=75°C
Peak forward surge current
I(AV)
1.5
A
IFSM
50.0
1.4
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method)
A
V
VF
IR
Maximum instantaneous forward voltage at 1.5A
μ
A
Maximum DC reverse current
at rated DC blocking voltage
TA=25°C
5.0
50.0
TA=100°C
pF
°C/W
°C
Typical junction capacitance (NOTE 1)
CJ
20.0
50.0
Typical thermal resistance (NOTE 2)
Operating junction and storage temperature range
RθJA
-50 to +150
TJ,TSTG
Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted
DN:T19816A0
https://www.microdiode.com
Rev:2019A0
Page :1
1N5391 THRU 1N5399
Reverse Voltage - 50 to 1000 Volts Forward Current - 1.5 Ampere
Ratings And Characteristic Curves
FIG. 1- FORWARD CURRENT DERATING CURVE
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
50
40
30
20
1.5
1.2
0.9
Single Phase
0.6
Half Wave 60Hz
Resistive or
inductive Load
0.3
0
10
0
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
0
25
50
75
100
125
150
175
1
10
100
AMBIENT TEMPERATURE, C
NUMBER OF CYCLES AT 60 Hz
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
1,000
100
10
20
10
TJ=150 C
TJ=100 C
1
0.1
TJ=25 C
PULSE WIDTH=300 µs
1%DUTY CYCLE
1
0.1
0.01
0.01
TJ=25 C
0.6
0.8
1.0
1.2
1.4
1.5
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF PEAK REVERSE VOLTAGE,%
FIG. 5-TYPICAL JUNCTION CAPACITANCE
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
200
100
100
10
1
TJ=25 C
10
0.1
0.01
0.1
1
10
100
1
0.1
1.0
10
100
REVERSE VOLTAGE,VOLTS
t,PULSE DURATION,sec.
The curve above is for reference only.
https://www.microdiode.com
Rev:2019A0
Page :2
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