1N4004SG [MDD]
GLASS PASSIVATED GENERAL PURPOSE RECTIFIER;
| 型号： | 1N4004SG |
| 厂家： | 
Chendahang Electronics Co., Ltd |
| 描述： | GLASS PASSIVATED GENERAL PURPOSE RECTIFIER 二极管 |
| 文件： | 总2页 (文件大小：615K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N4001SG THRU 1N4007SG
Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere
GLASS PASSIVATED GENERAL PURPOSE RECTIFIER
A-405
Features
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Glass passivated junction
1.0 (25.4)
MIN.
Open Junction chip
0.107 (2.7)
0.080 (2.3)
DIA.
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed
250℃/10 seconds at terminals
0.205(5.2)
0.166(4.2)
Mechanical Data
1.0 (25.4)
MIN.
Case : JEDEC A-405 Molded plastic body
Terminals : Solder plated, solderable per MIL-STD-750,Method 2026
Polarity : Polarity symbol marking on body
Mounting Position: Any
0.025 (0.65)
0.021 (0.55)
DIA.
Weight
: 0.008 ounce, 0.23 grams
Dimensions in inches and (millimeters)
Maximum Ratings And Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwisespecified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
1N
1N
1N
1N
1N
1N
1N
Parameter
4001SG 4002SG 4003SG 4004SG 4005SG 4006SG 4007SG
MDD
1N
SYMBOLS
UNITS
MDD
1N
MDD
1N
MDD
1N
MDD
1N
MDD
1N
MDD
1N
Marking Code
4001SG 4001SG 4001SG 4001SG 4001SG 4001SG 4001SG
50
35
50
100
200
140
200
400
280
400
600
420
600
800
560
800
1000
V
RMM
RMS
Maximum repetitive peak reverse voltage
Maximum RMS voltage
V
V
V
70
700
V
100
1000
Maximum DC blocking voltage
V
DC
Maximum average forward rectified current
I
(AV)
1.0
A
at TA=75
℃
Peak forward surge current
30
I
FSM
8.3ms single half sine-wave
A
superimposed onrated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0A
1.10
V
F
V
5.0
50.0
Maximum DC reverse current
at rated DC blocking voltage
TA=25℃
μA
I
R
TA=100℃
15.0
50.0
Typical junction capacitance (NOTE 1)
Typical thermal resistance (NOTE 2)
C
J
pF
℃/W
℃
R
θ
JA
STG
-55 to +150
Operating junction and storage temperature range
J,
T T
Note: 1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
(9.5mm)lead length,P.C.B. mounted
”
2.Thermal resistance from junction to ambient at 0.375
DN:T19820A0
https://www.microdiode.com
Rev:2019A0
Page :1
1N4001SG THRU 1N4007SG
Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere
Ratings And Characteristic Curves
FIG. 1- FORWARD CURRENT DERATING CURVE
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
30
25
20
15
1.0
0.8
0.6
Single Phase
0.4
Half Wave 60Hz
Resistive or
inductive Load
0.2
0
10
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
TA=75 C
0
25
50
75
100
125
150
175
5.0
1
10
100
AMBIENT TEMPERATURE, C
NUMBER OF CYCLES AT 60 Hz
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
1,000
100
10
20
10
TJ=150 C
TJ=100 C
1
0.1
TJ=25 C
PULSE WIDTH=300 µs
1%DUTY CYCLE
1
0.1
0.01
0.01
TJ=25 C
0.6
0.8
1.0
1.2
1.4
1.5
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF PEAK REVERSE VOLTAGE,%
FIG. 5-TYPICAL JUNCTION CAPACITANCE
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
200
100
100
10
1
TJ=25 C
10
0.1
0.01
0.1
1
10
100
1
0.1
1.0
10
100
REVERSE VOLTAGE,VOLTS
t,PULSE DURATION,sec.
The curve above is for reference only.
https://www.microdiode.com
Rev:2019A0
Page :2
相关型号：
©2020 ICPDF网 联系我们和版权申明