1N4002S [MDD]
GENERAL PURPOSE SILICON RECTIFIER;
| 型号： | 1N4002S |
| 厂家： | 
Chendahang Electronics Co., Ltd |
| 描述： | GENERAL PURPOSE SILICON RECTIFIER 二极管 |
| 文件： | 总2页 (文件大小：624K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N4001S THRU 1N4007S
Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere
GENERAL PURPOSE SILICON RECTIFIER
A-405
Features
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Idea for printed circuit board
Open Junction chip
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.3)
DIA.
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed
250℃/10 seconds at terminals
0.205(5.2)
0.166(4.2)
Mechanical Data
1.0 (25.4)
MIN.
Case : JEDEC A-405 Molded plastic body
Terminals : Solder plated, solderable per MIL-STD-750,Method 2026
Polarity : Polarity symbol marking on body
Mounting Position: Any
0.025 (0.65)
0.021 (0.55)
DIA.
Weight
: 0.008 ounce, 0.23 grams
Dimensions in inches and (millimeters)
Maximum Ratings And Electrical Characteristics
Ratings at 25°C ambient temperature unlss otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
1N4001S 1N4002S 1N4003S 1N4004S 1N4005S 1N4006S 1N4007S
Parameter
SYMBOLS
UNITS
MDD
MDD
MDD
MDD
MDD
MDD
MDD
Marking Code
1N4001S 1N4001S 1N4001S 1N4001S 1N4001S 1N4001S 1N4001S
50
35
50
100
70
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
V
RMM
RMS
Maximum repetitive peak reverse voltage
Maximum RMS voltage
V
V
V
V
100
1000
Maximum DC blocking voltage
V
DC
Maximum average forward rectified current
1.0
I
(AV)
A
at TA=75℃
Peak forward surge current
30
I
FSM
8.3ms single half sine-wave
A
superimposed onrated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0A
V
F
1.10
V
5.0
50.0
Maximum DC reverse current
at rated DC blocking voltage
TA=25℃
μA
I
R
TA=100℃
15.0
50.0
Typical junction capacitance (NOTE 1)
Typical thermal resistance (NOTE 2)
C
J
pF
℃/W
℃
R
θ
JA
STG
-55 to +150
Operating junction and storage temperature range
T T
J,
Note: 1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
(9.5mm)lead length,P.C.B. mounted
”
2.Thermal resistance from junction to ambient at 0.375
DN:T19815A0
https://www.microdiode.com
Rev:2019A0
Page :1
1N4001S THRU 1N4007S
Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere
Ratings And Characteristic Curves
FIG. 1- FORWARD CURRENT DERATING CURVE
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
30
25
20
15
1.0
0.8
0.6
Single Phase
0.4
Half Wave 60Hz
Resistive or
inductive Load
0.2
0
10
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
TA=75 C
0
25
50
75
100
125
150
175
5.0
1
10
100
AMBIENT TEMPERATURE, C
NUMBER OF CYCLES AT 60 Hz
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
1,000
100
10
20
10
TJ=150 C
TJ=100 C
1
0.1
TJ=25 C
PULSE WIDTH=300 µs
1%DUTY CYCLE
1
0.1
0.01
0.01
TJ=25 C
0.6
0.8
1.0
1.2
1.4
1.5
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF PEAK REVERSE VOLTAGE,%
FIG. 5-TYPICAL JUNCTION CAPACITANCE
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
200
100
100
10
1
TJ=25 C
10
0.1
0.01
0.1
1
10
100
1
0.1
1.0
10
100
REVERSE VOLTAGE,VOLTS
t,PULSE DURATION,sec.
The curve above is for reference only.
https://www.microdiode.com
Rev:2019A0
Page :2
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