ER2J [MCC]
2 Amp Super Fast Recovery Silicon Rectifier 50 to 1000 Volts; 2安培超快速恢复硅整流50到1000伏特型号: | ER2J |
厂家: | Micro Commercial Components |
描述: | 2 Amp Super Fast Recovery Silicon Rectifier 50 to 1000 Volts |
文件: | 总3页 (文件大小:903K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
ER2A
M C C
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents
21201 Itasca Street Chatsworth
ꢆꢋꢅꢌꢍꢎꢍꢍ
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ
$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
THRU
ER2M
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
2 Amp Super Fast
Recovery
Silicon Rectifier
50 to 1000 Volts
Features
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
For Surface Mount Applications
·
·
·
·
·
Extremely Low Thermal Resistance
Easy Pick And Place
High Temp Soldering: 250°C for 10 Seconds At Terminals
Superfast Recovery Times For High Efficiency
Maximum Ratings
DO-214AA
(SMBJ) (Round Lead)
·
·
·
Operating Temperature: -50°C to +150°C
Storage Temperature: -50°C to +150°C
Maximum Thermal Resistance; 20°C/W Junction To Lead
H
MCC
Catalog
Number
Device
Marking
Maximum
Recurrent
Peak Reverse
Voltage
50V
Maximum Maximum
Cathode Band
RMS
Voltage
DC
Blocking
Voltage
50V
J
ER2A
ER2B
ER2C
ER2D
ER2G
ER2J
ER2K
ER2M
ER2A
ER2B
ER2C
ER2D
ER2G
ER2J
ER2K
ER2M
35V
70V
100V
150V
200V
400V
600V
800V
1000V
100V
105V
140V
280V
420V
560V
700V
150V
200V
400V
600V
800V
1000V
A
C
E
D
B
F
G
Electrical Characteristics @ 25°C Unless Otherwise Specified
DIMENSIONS
Average Forward
Current
IF(AV)
2.0A
TJ = 75°C
INCHES
MIN
.078
.075
.002
-----
.035
.065
.205
.160
.130
MM
MIN
1.98
1.90
.05
-----
.90
1.65
5.21
4.06
3.30
DIM
A
B
C
D
E
MAX
.116
.089
.008
.02
.055
.091
.224
.180
.155
MAX
2.95
2.25
.20
NOTE
Peak Forward Surge
Current
IFSM
50A
8.3ms, half sine
.51
1.40
2.32
5.69
4.57
3.94
Maximum
Instantaneous
F
G
H
J
Forward Voltage
ER2A-D
.975V
1.35V
1.60V
VF
IR
IFM = 2.0A;
TJ = 25°C*
ER2G-K
ER2M
SUGGESTED SOLDER
PAD LAYOUT
Maximum DC
0.090"
Reverse Current At
Rated DC Blocking
Voltage
5mA
TJ = 25°C
150mA TJ = 100°C
Maximum Reverse
0.085”
Recovery Time
ER2A-D
50ns
Trr
CJ
IF=0.5A, IR=1.0A,
Irr=0.25A
ER2G-K
60ns
ER2M
100ns
0.070”
Typical Junction
Capacitance
25pF
Measured at
1.0MHz, VR=4.0V
*Pulse test: Pulse width 200 msec, Duty cycle 2%
www.mccsemi.com
ER2A thru ER2M
M C C
Figure 1
Typical Forward Characteristics
20
Figure 2
Forward Derating Curve
ER2G-2K
10
2.4
2.2
2.0
6
ER2A -2D
ER2M
4
2
1.8
1.6
1
.6
.4
1.4
1.2
Amps
Amps
1.0
.8
.2
.6
.4
.2
.1
.06
.04
Single Phase, Half Wave
60Hz Resistive or Inductive Load
0
25
50
75
100
125
150
0
°C
.02
.01
Average Forward Rectified Current - Amperesversus
Ambient Temperature -°C
.4
.8
1.2
Volts
1.6
2.0
2.4
Instantaneous Forward Current - Amperesversus
Instantaneous Forward Voltage - Volts
Figure 3
Junction Capacitance
100
60
40
20
TJ=25°C
pF
10
6
4
2
1
400
1000
.1
.2
.4
1
2
10 20
200
4
40
100
Volts
Junction Capacitance - pFversus
Reverse Voltage - Volts
www.mccsemi.com
ER2A thru ER2M
M C C
Figure 4
Peak Forward Surge Current
Figure 5
New SMB Assembly
50
40
30
Amps
20
Round Lead
Process
10
0
80
100
1
6
60
4
10 20
40
8
2
Cycles
Peak Forward Surge Current - Amperesversus
Number Of Cycles At 60Hz - Cycles
Figure 6
Reverse Recovery Time Characteristic And Test Circuit Diagram
50W
10W
trr
+0.5A
0
Pulse
Generator
Note 2
-0.25
25Vdc
Oscilloscope
Note 1
1W
-1.0
1cm
Notes:
1. Rise Time = 7ns max.
Set Time Base for 20/100ns/cm
Input impedance = 1 megohm, 22pF
2. Rise Time = 10ns max.
Source impedance = 50 ohms
3. Resistors are non-inductive
www.mccsemi.com
相关型号:
ER2J-G
Rectifier Diode, 1 Phase, 1 Element, 2A, 600V V(RRM), Silicon, DO-214AA, GREEN, PLASTIC, SMB, 2 PIN
SENSITRON
ER2J-GT3
Rectifier Diode, 1 Phase, 1 Element, 2A, 600V V(RRM), Silicon, DO-214AA, GREEN, PLASTIC, SMB, 2 PIN
SENSITRON
ER2J-LTP
Rectifier Diode, 1 Phase, 1 Element, 2A, 600V V(RRM), Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB-2
MCC
ER2J-TP
Rectifier Diode, 1 Phase, 1 Element, 2A, 600V V(RRM), Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC, HSMB, 2 PIN
MCC
©2020 ICPDF网 联系我们和版权申明