DTC114TKA [MCC]

NPN Digital Transistor; NPN数字晶体管
DTC114TKA
型号: DTC114TKA
厂家: Micro Commercial Components    Micro Commercial Components
描述:

NPN Digital Transistor
NPN数字晶体管

晶体 小信号双极晶体管 数字晶体管
文件: 总2页 (文件大小:1078K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
M C C  
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20736 Marilla Street Chatsworth  
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$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
DTC114TKA  
Micro Commercial Components  
Features  
Built-in bias resistors enable the configuration of an inverter circuit  
without connecting external input resistors (see equivalent circuit)  
The bias resistors consist of thin-film resistors with complete  
isolation to allow negative biasing of the input. They also have the  
advantage of almost completely eliminating parasitic effects  
Only the on/off conditions need to be set for operation, making  
device design easy  
NPN Digital Transistor  
SOT-23-3L  
A
Absolute Maximum Ratings  
D
Parameter  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
50  
50  
5
100  
Unit  
V
V
V
mA  
3
1. Base  
2. Emitter  
3. Collector  
B
C
1
2
Collector Current-Continuous  
E
Collector Dissipation  
PC  
200  
mW  
Junction Temperature  
TJ  
150  
Storage Temperature Range  
TSTG  
-55~150  
H
G
J
K
DIMENSIONS  
Electrical Characteristics  
INCHES  
MAX  
.117  
MM  
DIM  
A
B
C
D
E
G
H
J
K
MIN  
MIN  
2.87  
2.75  
1.55  
.925  
1.85  
.04  
1.12  
.14  
.34  
MAX  
2.97  
2.85  
1.65  
.975  
1.95  
.100  
1.25  
.17  
NOTE  
Sym  
Parameter  
Min  
50  
Typ  
Max Unit  
.113  
.108  
.061  
.036  
.073  
.0016  
.044  
.006  
.013  
Collector-Base Breakdown Voltage  
(IC=50uA, IE=0)  
V(BR)CBO  
---  
---  
---  
---  
---  
V
.112  
.065  
.038  
.077  
.0039  
.049  
.007  
.015  
Collector-Emitter Breakdown Voltage  
(IC=1mA, IB=0)  
V(BR)CEO  
V(BR)EBO  
ICBO  
50  
5
---  
V
Emitter-Base Breakdown Voltage  
(IE=50uA, IC=0)  
---  
V
Collector Cut-off Current  
(VCB=50V, IE=0)  
.37  
---  
0.5  
uA  
Suggested Solder  
Pad Layout  
.031  
.800  
Emitter Cut-off Current  
(VEB=4V, IC=0)  
IEBO  
---  
---  
0.5  
uA  
---  
DC Current Gain  
hFE  
100  
300  
600  
(VCE=5V, IC=1mA)  
Collector-Emitter Saturation Voltage  
VCE(sat)  
R1  
---  
7
---  
10  
0.3  
13  
---  
V
.035  
.900  
(IC=10mA, IB=1mA)  
Input Resistor  
KΩ  
MHz  
.087  
2.200  
inches  
mm  
Transition Frequency  
fT  
---  
250  
(VCE=10V, IC=-5mA, f=100MHz)  
.037  
.950  
.037  
.950  
www.mccsemi.com  
Revision: 1  
2005/06/29  
DTC114TKA  
M C C  
TM  
Micro Commercial Components  
www.mccsemi.com  
Revision: 1  
2005/06/29  

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