DR756-AP-HF

更新时间:2024-09-18 13:00:44
品牌:MCC
描述:Rectifier Diode, 1 Phase, 1 Element, 6A, 600V V(RRM), Silicon,

DR756-AP-HF 概述

Rectifier Diode, 1 Phase, 1 Element, 6A, 600V V(RRM), Silicon, 整流二极管

DR756-AP-HF 规格参数

是否Rohs认证:符合生命周期:Active
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.7
Is Samacsys:N应用:GENERAL PURPOSE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.1 VJESD-30 代码:O-PALF-W2
湿度敏感等级:1最大非重复峰值正向电流:200 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-50 °C最大输出电流:6 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:600 V最大反向电流:10 µA
表面贴装:NO端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

DR756-AP-HF 数据手册

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M C C  
DR750  
THRU  
DR7510  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
21201 Itasca Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
Features  
·
·
·
·
Low Cost  
6 Amp Glass  
Passivated Rectifier  
50 - 1000 Volts  
High Current Capability  
High Surge Current Capability  
Low Leakage  
Maximum Ratings  
R-6  
·
·
·
Operating Temperature: -50°C to +150°C  
Storage Temperature: -50°C to +150°C  
Maximum Thermal Resistance; 10°C/W Junction To Ambient  
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak  
Reverse  
Voltage  
50V  
100V  
200V  
400V  
600V  
Maximum Maximum  
RMS  
DC  
D
Voltage  
Blocking  
Voltage  
DR750  
DR751  
DR752  
DR754  
DR756  
DR758  
DR7510  
---  
---  
---  
---  
---  
---  
---  
35V  
70V  
50V  
100V  
200V  
400V  
600V  
800V  
1000V  
140V  
280V  
420V  
560V  
700V  
A
Cathode  
800V  
1000V  
B
D
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Average Forward  
Current  
IF(AV)  
6.0A  
TA = 60°C  
Peak Forward Surge  
Current  
IFSM  
200A  
8.3ms, half sine  
C
Maximum  
Instantaneous  
Forward Voltage  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
VF  
IR  
1.1V  
IFM = 6.0A;  
TJ = 25°C*  
10mA  
1mA  
TJ = 25°C  
TJ = 100°C  
DIMENSIONS  
INCHES  
MIN  
.340  
.340  
.048  
MM  
MIN  
DIM  
A
B
C
D
MAX  
.360  
.360  
.052  
---  
MAX  
9.10  
9.10  
1.30  
---  
NOTE  
8.60  
8.60  
Typical Junction  
Capacitance  
CJ  
100pF  
Measured at  
1.0MHz, VR=4.0V  
1.20  
1.000  
25.40  
*Pulse test: Pulse width 300 msec, Duty cycle 1%  
www.mccsemi.com  
M C C  
DR750 thru DR7510  
Figure 2  
Forward Derating Curve  
Figure 1  
Typical Forward Characteristics  
6
5
4
200  
100  
60  
PC BOARD  
40  
20  
3
2
1
Amps  
10  
6
Amps  
PC BOARD  
4
Single Phase, Half Wave  
60Hz Resistive or Inductive Load  
2
25°C  
0
50  
75  
100  
125  
150  
175  
1
.6  
.4  
0
°C  
Average Forward Rectified Current - Amperesversus  
Ambient Temperature -°C  
.2  
.1  
.6  
.8  
1.6  
1.0  
1.2  
1.4  
Volts  
Instantaneous Forward Current - Amperesversus  
Instantaneous Forward Voltage - Volts  
Figure 3  
Typical Thermal Resistance versus Lead Length  
20  
15  
°C/W  
10  
5
0
.1  
.2  
.3  
.4  
.5  
.6  
.7  
.8  
.9  
1.0  
1.1  
Inches  
Thermal Resistance -°C/W versus  
Equal Lead Length To Heat Sink - Inches  
www.mccsemi.com  
DR750 thru DR7510  
M C C  
Figure 4  
Typical Reverse Characteristics  
Figure 5  
Maximum Non-Repetitive Forward Surge Current  
100  
300  
60  
40  
250  
20  
200  
150  
100  
10  
6
Amps  
4
2
50  
0
TJ=100°C  
80  
100  
1
60  
1
4
6
10 20  
40  
8
2
mAmps  
.6  
.4  
Cycles  
Peak Forward Surge Current - Amperesversus  
Number Of Cycles At 60Hz - Cycles  
.2  
.1  
.06  
.04  
TJ=25°C  
.02  
.01  
20  
40  
60  
80  
140  
100  
120  
Volts  
Instantaneous Reverse Leakage Current - MicroAmperesversus  
Percent Of Rated Peak Reverse Voltage - Volts  
www.mccsemi.com  

DR756-AP-HF 相关器件

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DR756-TP MCC Rectifier Diode, 1 Phase, 1 Element, 6A, 600V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, R-6, 2 PIN 获取价格
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DR758-B MCC Rectifier Diode, 获取价格
DR758-BP MCC Rectifier Diode, 1 Phase, 1 Element, 6A, 800V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, R-6, 2 PIN 获取价格
DR758-BP-HF MCC Rectifier Diode, 1 Phase, 1 Element, 6A, 800V V(RRM), Silicon, 获取价格
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