BC856A [MCC]
PNP Small Signal Transistor 310mW; PNP小信号晶体管310MW
| 型号： | BC856A |
| 厂家： | 
Micro Commercial Components |
| 描述： | PNP Small Signal Transistor 310mW |
| 文件： | 总2页 (文件大小：108K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC856A
THRU
BC858C
M C C
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents
21201 Itasca Street Chatsworth
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ
$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ
Features
PNP Small
Signal Transistor
310mW
l
l
l
Ideally Suited for Automatic Insertion
150oC Junction Temperature
For Switching and AF Amplifier Applications
Mechanical Data
l Case: SOT-23, Molded Plastic
SOT-23
l Terminals: Solderable per MIL-STD-202, Method 208
l Polarity: See Diagram
A
D
l Weight: 0.008 grams ( approx.)
B
C
Marking Code (Note 2)
Type
Marking
3A
Type
Marking
3G
F
E
BC856A
BC856B
BC857A
BC857B
BC857C
BC858A
BC858B
BC858C
3B
3J
H
G
J
3E
3F
3K
3L
DIMENSIONS
MM
Maximum Ratings @ 25oC Unless Otherwise Specified
INCHES
MIN
Charateristic
Symbol Value Unit
DIM
A
B
C
D
E
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
-80
-50
-30
-65
-45
-30
-5.0
Collector-Base Voltage
BC856
BC857
BC858
BC856
BC857
BC858
VCBO
V
V
F
Collector-Emitter Voltage
G
H
J
VCEO
.085
.37
K
VEBO
IC
Emitter-Base Voltage
Collector Current
V
Suggested Solder
Pad Layout
-100
-200
-200
310
mA
mA
mA
mW
Peak Collector Current
Peak Emitter Current
Power Dissipation@Ts=50oC(Note1)
ICM
IEM
Pd
.031
.800
.035
.900
Operating & Storage Temperature
Tj, TSTG -55~150 oC
.079
2.000
inches
mm
Note: 1. Package mounted on ceramic substrate 0.7mm X 2.5cm2 area.
2. Current gain subgroup “ C” is not available for BC856
.037
.950
.037
.950
www.mccsemi.com
BC856A thru BC858C
M C C
@ TA =25°C unless otherwise specified
Electrical Characteristics
Characteristic
Symbol Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage (Note 3)
BC856
BC857
BC858
-80
-50
-30
-65
-45
-30
—
—
—
—
—
—
V(BR)CBO
IC = 10mA, IB = 0
V
Collector-Emitter Breakdown Voltage (Note 3)
BC856
BC857
BC858
—
—
—
—
—
—
IC = 10mA, IB = 0
IE = 1mA, IC = 0
V(BR)CEO
V
V
V(BR)EBO
-5
Emitter-Base Breakdown Voltage (Note 3)
H-Parameters
—
—
hfe
—
Small Signal Current Gain
Current Gain Group A
B
C
Current Gain Group A
200
330
600
2.7
4.5
8.7
18
30
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
kW
kW
kW
µS
µS
µS
—
hfe
—
hfe
—
hie
Input Impedance
—
hie
—
B
VCE = -5.0V, IC = -2.0mA,
f = 1.0kHz
hie
C
Current Gain Group A
—
hoe
—
Output Admittance
hoe
B
—
hoe
—
C
Current Gain Group A
60
—
1.5x10-4
2x10-4
3x10-4
hre
Reverse Voltage Transfer Ratio
hre
—
B
C
—
—
hre
—
DC Current Gain (Note 3)
Current Gain Group A
125
220
420
180
290
520
250
475
800
hFE
B
C
VCE = -5.0V, IC = -2.0mA
—
RqJSB
RqJA
—
—
—
—
320
400
°C/W
°C/W
Thermal Resistance, Junction to Substrate Backside
Thermal Resistance, Junction to Ambient
Note 1
Note 1
IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
-75
-250
-300
-650
VCE(SAT)
VBE(SAT)
VBE(ON)
Collector-Emitter Saturation Voltage (Note 3)
Base-Emitter Saturation Voltage (Note 3)
—
mV
mV
mV
IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
—
—
-700
-850
—
VCE = -5.0V, IC = -2.0mA
VCE = -5.0V, IC = -10mA
-600
—
-650
—
-750
-820
Base-Emitter Voltage (Note 3)
Collector-Cutoff Current (Note 3)
VCE = -80V
ICES
ICES
ICES
ICBO
ICBO
BC856
BC857
BC858
—
—
—
—
—
—
—
—
—
—
-15
-15
-15
-15
-4.0
nA
nA
nA
nA
µA
V
V
V
V
CE = -50V
CE = -30V
CB = -30V
CB = -30V, TA = 150°C
VCE = -5.0V, IC = -10mA,
f = 100MHz
fT
Gain Bandwidth Product
Collector-Base Capacitance
Noise Figure
100
—
200
3
—
—
10
MHz
pF
VCB = -10V, f = 1.0MHz
VCE = -5.0V, IC = 200µA,
RS = 2kW, f = 1kHz,
Df = 200Hz
CCBO
NF
—
2
dB
Notes:
1. Package mounted on ceramic substrate 0.7mm x 2.5cm2 area.
2. Current gain subgroup “C” is not available for BC856.
3. Short duration pulse test to minimize self-heating effect.
www.mccsemi.com
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