BC856A_08 [MCC]

PNP Small Signal Transistor310mW; PNP小信号Transistor310mW
BC856A_08
型号: BC856A_08
厂家: Micro Commercial Components    Micro Commercial Components
描述:

PNP Small Signal Transistor310mW
PNP小信号Transistor310mW

文件: 总3页 (文件大小:97K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BC856A  
THRU  
BC858C  
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0 and MSL Rating 1  
Ideally Suited for Automatic Insertion  
PNP Small  
Signal Transistor  
310mW  
150oC Junction Temperature  
For Switching and AF Amplifier Applications  
Mechanical Data  
Case: SOT-23, Molded Plastic  
SOT-23  
Terminals: Solderable per MIL-STD-202, Method 208  
Polarity: See Diagram  
A
D
C
Weight: 0.008 grams ( approx.)  
B
C
Marking Code (Note 2)  
E
B
Type  
Marking  
3A  
Type  
Marking  
3G  
F
E
BC856A  
BC856B  
BC857A  
BC857B  
BC857C  
BC858A  
BC858B  
BC858C  
3B  
3E  
3J  
3K  
3L  
H
G
J
3F  
K
DIMENSIONS  
MM  
Maximum Ratings @ 25oC Unless Otherwise Specified  
INCHES  
MIN  
Charateristic  
Symbol Value Unit  
DIM  
A
B
C
D
E
MAX  
.120  
.098  
.055  
.041  
.081  
.024  
.0039  
.044  
.007  
.020  
MIN  
2.80  
2.10  
1.20  
.89  
1.78  
.45  
.013  
.89  
MAX  
3.04  
2.64  
1.40  
1.03  
2.05  
.60  
.100  
1.12  
.180  
.51  
NOTE  
.110  
.083  
.047  
.035  
.070  
.018  
.0005  
.035  
.003  
.015  
-80  
-50  
-30  
-65  
-45  
-30  
-5.0  
Collector-Base Voltage  
BC856  
BC857  
BC858  
BC856  
BC857  
BC858  
VCBO  
V
V
F
Collector-Emitter Voltage  
G
H
J
VCEO  
.085  
.37  
K
VEBO  
IC  
Emitter-Base Voltage  
Collector Current  
V
Suggested Solder  
Pad Layout  
-100  
-200  
-200  
310  
mA  
mA  
mA  
mW  
Peak Collector Current  
Peak Emitter Current  
Power Dissipation@Ts=50oC(Note1)  
ICM  
IEM  
Pd  
.031  
.800  
.035  
.900  
Operating & Storage Temperature  
Tj, TSTG -55~150 oC  
.079  
2.000  
inches  
mm  
Note: 1. Package mounted on ceramic substrate 0.7mm X 2.5cm2 area.  
2. Current gain subgroup “ C” is not available for BC856  
.037  
.950  
.037  
.950  
www.mccsemi.com  
1 of 3  
Revision: 5  
2008/01/01  
BC856A thru BC858C  
M C C  
TM  
Micro Commercial Components  
@ TA =25°C unless otherwise specified  
Electrical Characteristics  
Characteristic  
Symbol Min  
Typ  
Max  
Unit  
Test Condition  
Collector-Base Breakdown Voltage (Note 3)  
BC856  
BC857  
BC858  
-80  
-50  
-30  
-65  
-45  
-30  
V(BR)CBO  
IC = 10mA, IB = 0  
V
Collector-Emitter Breakdown Voltage (Note 3)  
BC856  
BC857  
BC858  
I
C = 10mA, IB = 0  
V(BR)CEO  
V
V
V(BR)EBO  
-5  
Emitter-Base Breakdown Voltage (Note 3)  
H-Parameters  
IE = 1mA, IC = 0  
hfe  
Small Signal Current Gain  
Current Gain Group A  
B
C
Current Gain Group A  
200  
330  
600  
2.7  
4.5  
8.7  
18  
30  
kW  
kW  
kW  
µS  
µS  
µS  
hfe  
hfe  
hie  
Input Impedance  
hie  
B
VCE = -5.0V, IC = -2.0mA,  
f = 1.0kHz  
hie  
C
Current Gain Group A  
hoe  
Output Admittance  
hoe  
B
hoe  
C
Current Gain Group A  
60  
1.5x10-4  
2x10-4  
3x10-4  
hre  
Reverse Voltage Transfer Ratio  
hre  
B
C
hre  
DC Current Gain (Note 3)  
Current Gain Group A  
125  
220  
420  
180  
290  
520  
250  
475  
800  
hFE  
B
C
VCE = -5.0V, IC = -2.0mA  
RqJSB  
RqJA  
320  
400  
°C/W  
°C/W  
Thermal Resistance, Junction to Substrate Backside  
Thermal Resistance, Junction to Ambient  
Note 1  
Note 1  
I
I
C = -10mA, IB = -0.5mA  
C = -100mA, IB = -5.0mA  
-75  
-250  
-300  
-650  
VCE(SAT)  
VBE(SAT)  
VBE(ON)  
Collector-Emitter Saturation Voltage (Note 3)  
Base-Emitter Saturation Voltage (Note 3)  
mV  
mV  
mV  
I
I
C = -10mA, IB = -0.5mA  
C = -100mA, IB = -5.0mA  
-700  
-850  
VCE = -5.0V, IC = -2.0mA  
CE = -5.0V, IC = -10mA  
-600  
-650  
-750  
-820  
Base-Emitter Voltage (Note 3)  
Collector-Cutoff Current (Note 3)  
V
VCE = -80V  
ICES  
ICES  
ICES  
ICBO  
ICBO  
BC856  
BC857  
BC858  
-15  
-15  
-15  
-15  
-4.0  
nA  
nA  
nA  
nA  
µA  
V
V
V
V
CE = -50V  
CE = -30V  
CB = -30V  
CB = -30V, TA = 150°C  
VCE = -5.0V, IC = -10mA,  
f = 100MHz  
fT  
Gain Bandwidth Product  
Collector-Base Capacitance  
Noise Figure  
100  
200  
3
10  
MHz  
pF  
VCB = -10V, f = 1.0MHz  
CCBO  
VCE = -5.0V, IC = 200µA,  
RS = 2kW, f = 1kHz,  
Df = 200Hz  
NF  
2
dB  
Notes:  
1. Package mounted on ceramic substrate 0.7mm x 2.5cm2 area.  
2. Current gain subgroup “C” is not available for BC856.  
3. Short duration pulse test to minimize self-heating effect.  
www.mccsemi.com  
2 of 3  
Revision: 5  
2008/01/01  
M C C  
TM  
Micro Commercial Components  
Ordering Information  
Device  
Packing  
(Part Number)-TP  
Tape&Reel;3Kpcs/Reel  
***IMPORTANT NOTICE***  
Micro Commercial Components Corp . reserves the right to make changes without further notice to any  
product herein to make corrections, modifications , enhancements , improvements , or other changes .  
Micro Commercial Components Corp . does not assume any liability arising out of the application or  
use of any product described herein; neither does it convey any license under its patent rights ,nor  
the rights of others . The user of products in such applications shall assume all risks of such use  
and will agree to hold Micro Commercial Components Corp . and all the companies whose  
products are represented on our website, harmless against all damages.  
***APPLICATIONS DISCLAIMER***  
Products offer by Micro Commercial Components Corp . are not intended for use in Medical,  
Aerospace or Military Applications.  
www.mccsemi.com  
3 of 3  
Revision: 5  
2008/01/01  

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