BC847B-TP [MCC]

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3;
BC847B-TP
型号: BC847B-TP
厂家: Micro Commercial Components    Micro Commercial Components
描述:

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3

晶体 晶体管 光电二极管 IOT
文件: 总2页 (文件大小:107K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BC846A  
THRU  
BC848C  
M C C  
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Features  
NPN Small  
Signal Transistor  
310mW  
l
l
l
Ideally Suited for Automatic Insertion  
150oC Junction Temperature  
For Switching and AF Amplifier Applications  
Mechanical Data  
l Case: SOT-23, Molded Plastic  
SOT-23  
l Terminals: Solderable per MIL-STD-202, Method 208  
l Polarity: See Diagram  
A
D
l Weight: 0.008 grams ( approx.)  
Marking Code (Note 2)  
B
C
Type  
Marking  
1A  
Type  
Marking  
1G  
BC846A  
BC846B  
BC847A  
BC847B  
BC847C  
BC848A  
BC848B  
BC848C  
F
E
1B  
1J  
1E  
1F  
1K  
1L  
H
G
J
Maximum Ratings @ 25oC Unless Otherwise Specified  
DIMENSIONS  
MM  
Charateristic  
Symbol Value Unit  
INCHES  
MIN  
DIM  
A
B
C
D
E
MAX  
.120  
.098  
.055  
.041  
.081  
.024  
.0039  
.044  
.007  
.020  
MIN  
2.80  
2.10  
1.20  
.89  
1.78  
.45  
.013  
.89  
MAX  
3.04  
2.64  
1.40  
1.03  
2.05  
.60  
NOTE  
80  
50  
30  
65  
45  
30  
6.0  
5.0  
Collector-Base Voltage  
BC846  
BC847  
BC848  
BC846  
BC847  
BC848  
.110  
.083  
.047  
.035  
.070  
.018  
.0005  
.035  
.003  
.015  
VCBO  
V
Collector-Emitter Voltage  
F
VCEO  
V
V
G
H
J
.100  
1.12  
.180  
.51  
.085  
.37  
Emitter-Base Voltage BC846,BC847  
K
VEBO  
BC848  
Suggested Solder  
Pad Layout  
Collector Current  
IC  
100  
200  
200  
310  
mA  
mA  
mA  
mW  
Peak Collector Current  
ICM  
IEM  
Pd  
.031  
.800  
Peak Emitter Current  
Power Dissipation@Ts=50oC(Note1)  
.035  
.900  
Operating & Storage Temperature  
Tj, TSTG -55~150 oC  
.079  
2.000  
inches  
mm  
Note: 1. Package mounted on ceramic substrate  
0.7mm X 2.5cm2 area.  
.037  
.950  
2. Current gain subgroup “ C” is not available  
for BC846.  
.037  
.950  
www.mccsemi.com  
M C C  
BC846A thru BC848C  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
Collector-Base Breakdown Voltage (Note 3)  
BC846  
BC847  
BC848  
80  
50  
30  
V(BR)CBO  
IC = 10mA, IB = 0  
V
Collector-Emitter Breakdown Voltage (Note 3) BC846  
BC847  
BC848  
65  
45  
30  
IC = 10mA, IB = 0  
V(BR)CEO  
V
V
Emitter-Base Breakdown Voltage (Note 3)  
H-Parameters  
BC846  
BC847  
BC848  
6
5
V(BR)EBO  
IE = 1mA, IC = 0  
hfe  
hfe  
hfe  
hie  
hie  
hie  
hoe  
hoe  
hoe  
hre  
hre  
hre  
Small Signal Current Gain  
Current Gain Group A  
220  
330  
600  
2.7  
4.5  
8.7  
18  
30  
kW  
kW  
kW  
µS  
µS  
µS  
B
C
Input Impedance  
Current Gain Group A  
B
C
Current Gain Group A  
VCE = 5.0V, IC = 2.0mA,  
f = 1.0kHz  
Output Admittance  
B
C
A
B
C
60  
1.5x10-4  
2x10-4  
3x10-4  
Reverse Voltage Transfer Ratio  
Current Gain Group  
DC Current Gain  
Current Gain Group A  
B
110  
200  
420  
180  
290  
520  
220  
450  
800  
VCE = 5.0V, IC = 2.0mA  
(Note 3)  
C
RqS  
°C/W  
°C/W  
Thermal Resistance, Junction to Substrate Backside  
Thermal Resistance, Junction to Ambient Air  
Collector-Emitter Saturation Voltage (Note 3)  
Note 1  
320  
400  
RqJA  
Note 1  
IC = 10mA, IB = 0.5mA  
IC = 100mA, IB = 5.0mA  
90  
200  
250  
600  
VCE(SAT)  
VBE(SAT)  
VBE(ON)  
mV  
mV  
mV  
IC = 10mA, IB = 0.5mA  
IC = 100mA, IB = 5.0mA  
700  
900  
Base-Emitter Saturation Voltage (Note 3)  
Base-Emitter Voltage (Note 3)  
VCE = 5.0V, IC = 2.0mA  
VCE = 5.0V, IC = 10mA  
580  
660  
700  
770  
VCE = 80V  
ICES  
ICES  
ICES  
ICBO  
ICBO  
Collector-Cutoff Current (Note 3)  
BC846  
BC847  
BC848  
15  
15  
15  
15  
5.0  
nA  
nA  
nA  
nA  
µA  
V
V
V
V
CE = 50V  
CE = 30V  
CB = 40V  
CB = 30V, TA = 150°C  
VCE = 5.0V, IC = 10mA,  
f = 100MHz  
fT  
Gain Bandwidth Product  
100  
300  
3.0  
MHz  
pF  
VCB = 10V, f = 1.0MHz  
CCBO  
Collector-Base Capacitance  
VCE = 5V, IC = 200µA,  
RS = 2.0kW,  
f = 1.0kHz, Df = 200Hz  
Noise Figure  
NF  
2
10  
dB  
Notes:  
1. Package mounted on ceramic substrate 0.7mm x 2.5cm2 area.  
2. Current gain subgroup “C” is not available for BC846.  
3. Short duration pulse test to minimize self-heating effect.  
www.mccsemi.com  

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