BC548C [MCC]
NPN Silicon Amplifier Transistor 625mW; NPN硅晶体管放大器625mW
| 型号： | BC548C |
| 厂家： | 
Micro Commercial Components |
| 描述： | NPN Silicon Amplifier Transistor 625mW |
| 文件： | 总4页 (文件大小：1239K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC546,B
BC547,A,B,C
BC548,A,B,C
M C C
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21201 Itasca Street Chatsworth
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Features
l Through Hole Package
l 150oC Junction Temperature
NPN Silicon
Amplifier Transistor
625mW
Pin Configuration
Bottom View
C
B
E
TO-92
A
E
Mechanical Data
l Case: TO-92, Molded Plastic
l Polarity: indicated as above.
B
Maximum Ratings @ 25oC Unless Otherwise Specified
Charateristic
Symbol Value Unit
Collector-Emitter Voltage BC546
65
45
30
80
50
30
C
VCEO
BC547
BC548
V
Collector-Base Voltage
BC546
BC547
BC548
VCBO
V
V
D
VEBO
IC
Emitter-Base Voltage
Collector Current(DC)
6.0
100
mA
mW
625
5.0
1.5
12
o
Pd
Pd
Power Dissipation@TA=25 C
Power Dissipation@TC=25oC
mW/oC
W
G
mW/oC
DIMENSIONS
Thermal Resistance, Junction to
Ambient Air
oC/W
R
R
JA
200
INCHES
MIN
.175
.175
.500
.016
.135
.095
MM
MIN
DIM
A
B
C
D
MAX
MAX
4.70
4.70
---
NOTE
.185
.185
---
.020
.145
.105
4.45
4.46
12.7
0.41
3.43
2.42
Thermal Resistance, Junction to
Case
Operating & Storage Temperature T, TSTG -55~150 oC
oC/W
JC
83.3
0.63
3.68
2.67
E
G
j
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BC546 thru BC548C
M C C
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I = 1.0 mA, I = 0)
BC546
BC547
BC548
V
V
V
65
45
30
—
—
—
—
—
—
V
(BR)CEO
(BR)CBO
(BR)EBO
C
B
Collector–Base Breakdown Voltage
(I = 100 µAdc)
C
BC546
BC547
BC548
80
50
30
—
—
—
—
—
—
V
V
Emitter–Base Breakdown Voltage
BC546
BC547
BC548
6.0
6.0
6.0
—
—
—
—
—
—
(I = 10 mA, I = 0)
E
C
ON CHARACTERISTICS
DC Current Gain
h
FE
—
(I = 10 µA, V = 5.0 V)
BC547A/548A
BC546B/547B/548B
BC548C
—
—
—
90
150
270
—
—
—
C
CE
(I = 2.0 mA, V = 5.0 V)
BC546
BC547
BC548
BC547A/548A
BC546B/547B/548B
BC547C/BC548C
110
110
110
110
200
420
—
—
—
180
290
520
450
800
800
220
450
800
C
CE
(I = 100 mA, V = 5.0 V)
BC547A/548A
BC546B/547B/548B
BC548C
—
—
—
120
180
300
—
—
—
C
CE
Collector–Emitter Saturation Voltage
(I
V
V
V
CE(sat)
—
—
---
0.3
1.0
C = 100 mA, IB = 5.0 mA)
Base–Emitter Saturation Voltage
(I
C = 100 mA, IB = 5.0 mA)
—
V
V
BE(sat)
Base–Emitter On Voltage
(I = 2.0 mA, V = 5.0 V)
V
BE(on)
0.55
—
—
—
0.7
0.77
C
CE
(I = 10 mA, V = 5.0 V)
C
CE
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
f
T
MHz
(I = 10 mA, V = 5.0 V, f = 100 MHz)
BC546
BC547
BC548
150
150
150
300
300
300
—
—
—
C
CE
Output Capacitance
(V = 10 V, I = 0, f = 1.0 MHz)
C
—
1.7
4.5
pF
pF
—
obo
CB
C
Input Capacitance
(V = 0.5 V, I = 0, f = 1.0 MHz)
C
ibo
—
10
—
EB
C
Small–Signal Current Gain
h
fe
(I = 2.0 mA, V = 5.0 V, f = 1.0 kHz)
BC546
BC547/548
BC547A/548A
BC546B/547B/548B
BC547C/548C
125
125
125
240
450
—
—
220
330
600
500
900
260
500
900
C
CE
Noise Figure
NF
dB
(I = 0.2 mA, V = 5.0 V, R = 2 kW,
f = 1.0 kHz, ∆f = 200 Hz)
BC546
BC547
BC548
—
—
—
2.0
2.0
2.0
10
10
10
C
CE
S
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M C C
BC546 thru BC548C
2.0
1.0
0.9
V
= 10 V
T = 25°C
A
CE
T = 25°C
1.5
A
0.8
0.7
V
@ I /I = 10
C B
BE(sat)
1.0
0.8
V
@ V = 10 V
CE
BE(on)
0.6
0.5
0.4
0.3
0.6
0.4
0.3
0.2
0.1
V
@ I /I = 10
C B
CE(sat)
0.2
0
0.1
0.2
0.5 1.0
2.0
5.0 10
20
50 100 200
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
I , COLLECTOR CURRENT (mAdc)
C
I , COLLECTOR CURRENT (mAdc)
C
Figure 1. Normalized DC Current Gain
Figure 2. “Saturation” and “On” Voltages
2.0
1.6
1.2
0.8
0.4
0
1.0
1.2
1.6
2.0
2.4
2.8
T = 25°C
-55°C to +125°C
A
I = 200 mA
C
I = 50 mA
C
I = 100 mA
C
I =
I =
C
10 mA 20 mA
C
0.02
0.1
1.0
10 20
0.2
1.0
10
100
I , BASE CURRENT (mA)
B
I , COLLECTOR CURRENT (mA)
C
Figure 3. Collector Saturation Region
Figure 4. Base–Emitter Temperature Coefficient
BC547/BC548
10
7.0
5.0
400
300
T = 25°C
A
200
C
ib
V
= 10 V
CE
T = 25°C
100
80
3.0
2.0
A
C
ob
60
40
30
1.0
20
0.4 0.6 0.8 1.0
2.0
4.0 6.0 8.0 10
20
40
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
50
V , REVERSE VOLTAGE (VOLTS)
R
I , COLLECTOR CURRENT (mAdc)
C
Figure 5. Capacitances
Figure 6. Current–Gain – Bandwidth Product
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M C C
BC546 thru BC548C
BC547/BC548
1.0
T = 25°C
A
V
= 5 V
CE
T = 25°C
0.8
A
V
@ I /I = 10
C B
BE(sat)
2.0
1.0
0.5
0.6
0.4
0.2
0
V
@ V = 5.0 V
CE
BE
0.2
V
@ I /I = 10
C B
CE(sat)
0.1 0.2
1.0
10
100
0.2
0.5 1.0 2.0
5.0
10 20
50 100 200
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 7. DC Current Gain
Figure 8. “On” Voltage
2.0
1.6
1.2
0.8
0.4
0
-1.0
-1.4
-1.8
-2.2
-2.6
-3.0
T = 25°C
A
100 mA
200 mA
20 mA
50 mA
θ
for V
BE
VB
-55°C to 125°C
I =
C
10 mA
0.02 0.05 0.1 0.2
0.5
1.0 2.0
5.0 10
20
0.2
0.5 1.0 2.0
5.0
10 20
50
100 200
I , BASE CURRENT (mA)
B
I , COLLECTOR CURRENT (mA)
C
Figure 9. Collector Saturation Region
Figure 10. Base–Emitter Temperature Coefficient
BC546
40
T = 25°C
A
V
= 5 V
CE
T = 25°C
500
A
20
10
C
ib
200
100
50
6.0
4.0
C
ob
20
2.0
0.1 0.2
0.5
1.0 2.0
5.0
10 20
50
100
1.0
5.0 10
50 100
V , REVERSE VOLTAGE (VOLTS)
R
I , COLLECTOR CURRENT (mA)
C
Figure 11. Capacitance
Figure 12. Current–Gain – Bandwidth Product
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