2SD880-BP [MCC]
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN;
| 型号： | 2SD880-BP |
| 厂家： | 
Micro Commercial Components |
| 描述： | Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN 局域网 放大器 晶体管 |
| 文件： | 总2页 (文件大小：132K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SD880
M C C
TM
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ
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2SD880-Q
2SD880-Y
2SD880-GR
Micro Commercial Components
Features
•
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates
NPN Silicon
Power Transistors
RoHS Compliant. See ordering information)
Power amplifier applications
•
•
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0 and MSL Rating 1
Maximum Ratings
TO-220
Symbol
Rating
Rating
Unit
C
VCEO
VCBO
VEBO
IC
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
60
60
7
3
1.5
V
V
V
B
S
F
A
Q
PC
TJ
Collector power dissipation
Junction Temperature
Storage Temperature
W
R
R
T
-55 to +150
A
TSTG
-55 to +150
U
O
Electrical Characteristics @ 25 C Unless Otherwise Specified
1
2
3
Symbol
Parameter
Min
Type
Max
Units
H
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
Collector-Emitter Breakdown Voltage
(IC=50mAdc, IB=0)
Collector-Base Breakdown Voltage
(IC=100uAdc, IE=0)
Emitter-Base Breakdown Voltage
(IE=100uAdc, IC=0)
Collector-Base Cutoff Current
(VCB=60Vdc,IE=0)
60
60
7
---
---
---
---
---
---
---
Vdc
Vdc
K
---
Vdc
V
L
J
---
---
100
100
uAdc
uAdc
D
R
G
IEBO
Emitter-Base Cutoff Current
(VEB=7Vdc, IC=0)
N
PIN 1.
PIN 2.
PIN 3.
BASE
COLLECTOR
EMITTER
ON CHARACTERISTICS
hFE
VCE(sat)
VBE
Forward Current Transfer ratio
DIMENSIONS
(IC=500mAdc, VCE=5Vdc)
Collector-Emitter Saturation Voltage
(IC=3Adc, IB=300mAdc)
Base-Emitter Voltage
(IC=0.5Adc,VCE=5Vdc)
60
---
---
---
300
1
---
Vdc
INCHES
MM
MIN
14.22
9.65
MAX
15.88
10.67
NOTE
DIM
A
MIN
MAX
.625
.560
.380
.140
B
C
.420
.190
---
---
---
---
3
1
Vdc
MHz
pF
3.56
4.82
D
F
.020
.139
.190
---
.045
.161
.110
.250
.025
0.51
3.53
2.29
---
1.14
4.09
2.79
6.35
0.64
fT
Transistor Frequency
---
---
(IC=500mAdc, VCE=5Vdc)
Collector Output Capacitance
(VCB=10Vdc, IE=0, f=1MHz)
G
H
J
Cob
70
.012
0.30
K
L
.500
.045
.580
.060
12.70
1.14
14.73
1.52
ton
ts
tf
Turn on time
Storage time
Fall time
---
---
---
0.8
1.5
0.8
---
---
---
us
us
us
IB1=-IB2=0.2A, IC=2A,
VCC=30V, PW=20us
N
.190
.210
4.83
5.33
Q
R
S
T
U
V
.100
.080
.045
.230
-----
.135
.115
.055
.270
.050
-----
2.54
2.04
1.14
5.84
-----
3.43
2.92
1.39
6.86
1.27
-----
Classification OF hFE(1)
Rank
Range
Q
Y
GR
150-300
60-120
100-200
.045
1.15
Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex 7.
www.mccsemi.com
Revision: 4
2008/01/01
M C C
TM
Micro Commercial Components
Ordering Information
Device
Packing
(Part Number)-BP
Bulk;1Kpcs/Box
***IMPORTANT NOTICE***
Micro Commercial Components Corp . reserves the right to make changes without further notice to any
product herein to make corrections, modifications , enhancements , improvements , or other changes .
Micro Commercial Components Corp . does not assume any liability arising out of the application or
use of any product described herein; neither does it convey any license under its patent rights ,nor
the rights of others . The user of products in such applications shall assume all risks of such use
and will agree to hold Micro Commercial Components Corp . and all the companies whose
products are represented on our website, harmless against all damages.
***APPLICATIONS DISCLAIMER***
Products offer by Micro Commercial Components Corp . are not intended for use in Medical,
Aerospace or Military Applications.
www.mccsemi.com
2 of 2
Revision: 4
2008/01/01
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