2SC4115S-S-B [MCC]
Transistor;
| 型号： | 2SC4115S-S-B |
| 厂家： | 
Micro Commercial Components |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：48K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC4115S
M C C
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents
20736 Marilla Street Chatsworth
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ
$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ
TM
2SC4115S-Q
2SC4115S-R
2SC4115S-S
Micro Commercial Components
Features
NPN
•
•
•
•
Power dissipation: PCM = 0.3W(Tamb=25?)
Collector current: ICM = 3A
Plastic-Encapsulate
Transistors
Collector-base voltage: V(BR)CBO = 40V
Operating and storage junction temperature range
TJ, Tstg: -55? to + 150?
Electrical Characteristics @ 25R Unless Otherwise Specified
Symbol
Parameter
Collector-Emitter Voltage
(IC=-50IA, IE=0)
Min
Typ
Max
Unit
TO-92S
VCEO
20
---
---
V
A
E
Collector-Base Voltage
(IC=-1IA, IB=0)
VCBO
40
---
---
V
V
Emitter-Base Voltage
(IE=-50IA, IC=0)
VEBO
ICBO
IEBO
hFE
6.0
---
---
---
---
---
---
---
---
0.1
0.1
560
0.5
---
Collector cut-off Current
(VCB=-20V, IE=0)
B
IA
IA
---
Emitter cut-off Current
(VEB=-5V, IC=0)
DC current gain
(VCE=-2V, IC=-0.1A)
Collector-Emitter Saturation Voltage
(IC=-2A, IB=-0.1A)
Transition Frequency
(VCE=2.0Vdc, IC=0.5Adc)
---
120
---
VCE(sat)
fT
V
C
200
MHz
Measured Using Pulse Current
CLASSIFICATION OF hFE
Rank
Range
Marking
Q
R
S
120-270
4115Q
180-390
4115R
270-560
4115S
2
1
3
D
1.EMITTER
2.COLLECTOR
3.BASE
G
DIMENSIONS
INCHES
MIN
MM
DIM
A
B
MAX
---
MIN
MAX
---
NOTE
.16
.12
4.00
3.00
C
.59
15.00
D
E
G
.02
.08
.20
0.45
2.00
5.00
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Revision: 2
2007/03/01
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