2SA1576AQ [MCC]
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3;
| 型号： | 2SA1576AQ |
| 厂家： | 
Micro Commercial Components |
| 描述： | Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3 |
| 文件： | 总3页 (文件大小：88K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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TM
2SA1576A
Micro Commercial Components
Features
Excellent hFE Linearity
PNP Silicon
Epitaxial Transistors
Complementary to 2SC4081
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Maximum Ratings
Symbol
VCEO
VCBO
VEBO
IC
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Rating
-50
Unit
V
SOT-323
-60
V
A
-6
V
D
-150
200
150
mA
mW
C
PC
Collector power dissipation
Junction Temperature
TJ
C
B
TSTG
Storage Temperature
-55 to +150
E
B
F
E
Electrical Characteristics @ 25 Unless Otherwise Specified
Symbol
Parameter
Min
Typ
Max
Units
OFF CHARACTERISTICS
H
ICBO
Collector Cutoff Current
(VCB=-60Vdc)
---
---
---
---
-100
-100
nAdc
nAdc
G
J
IEBO
Emitter Cutoff Current
(VEB=-6.0Vdc)
K
DIMENSIONS
INCHES
ON CHARACTERISTICS
BVCBO
BVCEO
BVEBO
hFE
Collector-base breakdown voltage
(IC=-50µAdc )
-60
---
---
---
Vdc
Vdc
Vdc
---
MM
DIM
A
B
C
D
E
MIN
.071
.045
.079
MAX
.087
.053
.087
MIN
1.80
1.15
2.00
MAX
NOTE
2.20
1.35
2.20
Collector-emitter breakdown
(I =-1µAdc)
-50
-6
---
---
---
voltage
C
.026 Nominal
0.65Nominal
1.20
.30
.000
.90
.100
.30
.047
.055
.016
.004
.039
.010
.016
1.40
.40
.100
1.00
.250
.40
F
.012
.000
.035
.004
.012
Emitter-base breakdown voltage
(IE=-50µAdc)
---
G
H
J
DC Current Gain
(IC=-1mAdc, VCE=-6.0Vdc)
120
---
560
-0.5
---
K
Suggested Solder
Pad Layout
0.70
VCE(sat)
Collector Saturation Voltage
(IC=-50mAdc, IB=-5.0mAdc)
---
Vdc
pF
Cob
Output Capacitance
(VCB=-12.0Vdc, IE=0, f=1.0MHz)
---
5.0
0.90
1.90
fT
Gain Bandwidth product
(VCE=-12Vdc, IE=2mAdc,f=30MHz)
---
100
---
MHz
h
FE CLASSIFICATION
0.65
Rank
hFE
Q
R
S
0.65
120~270
FQ
180~390
FR
270~560
Marking
FS
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Revision: 3
2007/01/25
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Micro Commercial Components
2SA1576A
−35.0
−31.5
−28.0
−24.5
−21.0
−17.5
−14.0
−10.5
−7.0
−100
−50
−10
−8
V
CE=−6V
Ta=25˚C
Ta=25˚C
Ta=100˚C
25˚C
−40˚C
−20
−10
−500
−80 −450
−400
−350
−300
−5
−250
−200
−60
−6
−4
−2
−2
−1
−40
−20
−150
−100
−0.5
−50µA
−3.5µA
−0.2
−0.1
I
B
=0
IB=0
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
BASE TO EMITTER VOLTAGE : VBE
0
−0.4
−0.8
−1.2
−1.6 −2.0
0
−1
−2
−3
−4
−5
V)
COLLECTOR TO EMITTER VOLTAGE : VCE
(
(V)
COLLECTOR TO MITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
characteristics (I)
Fig.1 Grounded emitter propagation
characteristics
Fig.3 Grounded emitter output
characteristics (II)
ꢀ
ꢀ
500
−1
500
Ta=25˚C
Ta=100˚C
25˚C
V
CE=−5V
Ta=25˚C
−3V
−1V
−0.5
−40˚C
200
100
50
200
100
−0.2
−0.1
I
C/I
B
=
50
20
10
50
−0.05
V
CE=−6V
−0.2 −0.5 −1 −2
−5 −10 −20 −50 −100
−0.2 −0.5 −1 −2
−5 −10 −20 −50 −100
mA)
−0.2 −0.5 −1 −2
−5 −10 −20 −50 −100
mA)
COLLECTOR CURRENT : I mA)
C (
COLLECTOR CURRENT : I
C
(
COLLECTOR CURRENT : I
C
(
Fig.5 DC current gain vs.
collector current (II)
Fig.4 DC current gain vs.
collector current (I)
Fig.6 Collector-emitter saturation
voltage vs. collector current (I)
ꢀ
ꢀ
1000
500
20
−1
ꢀ
ꢀ
Ta=25˚C
CE=−12V
Ta=25˚C
f=1MHz
lC/lB=10
V
I
I
E
=
=
0A
0A
−0.5
C
10
5
200
100
−0.2
−0.1
Ta=100˚C
25˚C
−40˚C
2
−0.05
50
−0.5 −1
−2
−5
−10 −20
0.5
1
2
5
10 20
50 100
−0.2 −0.5 −1 −2
−5 −10 −20 −50 −100
mA)
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
EMITTER CURRENT : I (mA)
E
COLLECTOR CURRENT : I
C
(
Fig.9 Collector output capacitance vs.
collector-base voltage
Fig.7 Collector-emitter saturation
voltage vs. collector current (II)
Fig.8 Gain bandwidth product vs.
emitter current
Emitter inputcapacitance vs.
emitter-base voltage
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Revision: 3
2007/01/25
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***APPLICATIONS DISCLAIMER***
Products offer by Micro Commercial Components Corp . are not intended for use in Medical,
Aerospace or Military Applications.
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