2N4401 [MCC]
NPN General Purpose Amplifier; NPN通用放大器
| 型号： | 2N4401 |
| 厂家： | 
Micro Commercial Components |
| 描述： | NPN General Purpose Amplifier |
| 文件： | 总3页 (文件大小：82K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
M C C
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21201 Itasca Street Chatsworth
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2N4401
Features
·
·
Through Hole Package
Capable of 600mWatts of Power Dissipation
NPN General
Purpose Amplifier
Pin Configuration
Bottom View
C
B
E
TO-92
A
E
Electrical Characteristics @ 25°C Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBL
Collector-Emitter Breakdown Voltage*
(IC=1.0mAdc, IB=0)
40
60
Vdc
Vdc
B
Collector-Base Breakdown Voltage
(IC=10mAdc, IE=0)
Emitter-Base Breakdown Voltage
(IE=0.1mAdc, IC=0)
6.0
Vdc
Base Cutoff Current
0.1
0.1
mAdc
mAdc
(VCE=35Vdc, VBE=0.4Vdc)
Collector Cutoff Current
(VCE=35Vdc, VBE=0.4Vdc)
ICEX
C
ON CHARACTERISTICS
hFE
DC Current Gain*
(IC=0.1mAdc, VCE=1.0Vdc)
(IC=1.0mAdc, VCE=1.0Vdc)
(IC=10mAdc, VCE=1.0Vdc)
(IC=150mAdc, VCE=1.0Vdc)
(IC=500mAdc, VCE=1.0Vdc)
Collector-Emitter Saturation Voltage
(IC=150mAdc, IB=15mAdc)
(IC=500mAdc, IB=50mAdc)
Base-Emitter Saturation Voltage
(IC=150mAdc, IB=15mAdc)
(IC=500mAdc, IB=50mAdc)
20
40
80
100
40
300
D
VCE(sat)
0.4
0.75
Vdc
Vdc
VBE(sat)
0.75
250
0.95
1.2
SMALL-SIGNAL CHARACTERISTICS
G
fT
Current Gain-Bandwidth Product
(IC=20mAdc, VCE=10Vdc, f=100MHz)
Collector-Base Capacitance
(VCB=5.0Vdc, IE=0, f=100kHz)
Emitter-Base Capacitance
MHz
pF
DIMENSIONS
Ccb
Ceb
6.5
INCHES
MIN
.175
.175
.500
.016
.135
.095
MM
MIN
DIM
A
B
C
D
MAX
MAX
4.70
4.70
---
NOTE
.185
.185
---
.020
.145
.105
4.45
4.46
12.7
0.41
3.43
2.42
(VBE=0.5Vdc, IC=0, f=100kHz)
30.0
pF
SWITCHING CHARACTERISTICS
0.63
3.68
2.67
td
tr
ts
tf
Delay Time
Rise Time
Storage Time
Fall Time
(VCC=30Vdc, VBE=0.2Vdc
IC=150mAdc, IB1=15mAdc)
(VCC=30Vdc, IC=150mAdc
IB1=IB2=15mAdc)
15
20
225
30
ns
ns
ns
ns
E
G
*Pulse Width £ 300ms, Duty Cycle£ 2.0%
www.mccsemi.com
2N4401
M C C
Base-Emitter ON Voltage vs
Collector Current
DC Current Gain vs Collector Current
360
300
240
180
120
60
1.2
1.0
VCE = 10V
VCE = 10V
0.8
hFE
VBE(ON) - (V)
TA = 25°C
0.6
0.4
TA = 125°C
0.2
0
1
100
1000
10
100
IC - (mA)
1000
1
10
IC (mA)
Collector-Emitter Saturation
Volatge vs Collector Current
Base-Emitter Saturation
Voltage vs Collector Current
1.1
1.0
.24
.20
.16
IC/IB = 10
TA = 25°C
IC/IB = 10
TA = 25°C
0.9
0.8
VBE(SAT) - (V)
VCE(SAT) - (V)
.12
.08
.04
0
0.7
0.6
0.5
1.0
100
1000
1.0
1000
10
10
100
IC - (mA)
IC - (mA)
Input Capacitance vs
Reverse Bias Voltage
Collector-Base Diode Reverse
Current vs Temperature
100
10
40
32
f = 1MHz
VCB = 20V
24
16
pF
ICBO - (mA)
Ceb
1.0
8
0
0.1
25
50
75
125 150
0.1
1.0
Volts - (V)
10
0
100
TJ - (°C)
www.mccsemi.com
2N4401
M C C
Maximum Power Dissipation vs
Ambient Temperature
Output Capacitance vs
Reverse Bias Voltage
800
600
400
200
0
10
8
f = 1MHz
TO-92
PD(MAX) - (mW)
6
4
2
pF
Ccb
SOT-23
0
50
100
150
200
0
0.1
1.0
Volts - (V)
10
TA - (°C)
www.mccsemi.com
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