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2N4123 [MCC]

NPN Silicon General Purpose Transistor 625mW; NPN硅通用晶体管625mW
2N4123
型号： 2N4123
厂家： Micro Commercial Components    Micro Commercial Components
描述：

NPN Silicon General Purpose Transistor 625mW
NPN硅通用晶体管625mW

晶体 晶体管
文件： 总5页 (文件大小：745K)
中文：  中文翻译
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M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
21201 Itasca Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
2N4123  
2N4124  
Features  
l Through Hole TO-92 Package  
NPN Silicon General  
Purpose Transistor  
625mW  
l Capable of 625mWatts of Power Dissipatio  
Pin Configuration  
Bottom View  
C
B
E
TO-92  
A
E
Mechanical Data  
l Case: TO-92, Molded Plastic  
l Marking:  
B
2N4123 --------- 2N4123  
2N4124 --------- 2N4124  
Maximum Ratings @ 25oC Unless Otherwise Specified  
Charateristic  
Symbol Value Unit  
C
Collector-Emitter Voltage 2N4123  
2N4124  
Collector-Base Voltage 2N4123  
30  
25  
40  
30  
VCEO  
VCBO  
V
V
V
2N4124  
Emitter-Base Voltage  
Collector Current(DC)  
2N4123  
2N4124  
VEBO  
IC  
5
D
200  
625  
5.0  
1.5  
12  
mA  
mW  
mW/oC  
W
mW/oC  
Power Dissipation@TA=25oC  
Power Dissipation@TC=25oC  
Pd  
Pd  
G
Thermal Resistance, Junction to  
Ambient Air  
DIMENSIONS  
oC/W  
ꢀꢀꢁꢂꢃ  
200  
INCHES  
MIN  
.175  
.175  
.500  
.016  
.135  
.095  
MM  
MIN  
DIM  
A
B
C
D
MAX  
MAX  
4.70  
4.70  
---  
0.63  
3.68  
2.67  
NOTE  
.185  
.185  
---  
.020  
.145  
.105  
4.45  
4.46  
12.7  
0.41  
3.43  
2.42  
Thermal Resistance, Junction to  
Case  
Operating & Storage Temperature T, TSTG -55~150 oC  
oC/W  
ꢀꢀꢁꢂꢃ  
83.3  
E
G
j
www.mccsemi.com  
M C C  
2N4123  
2N4124  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
(1)  
Collector–Emitter Breakdown Voltage  
V
Vdc  
(BR)CEO  
(I = 1.0 mAdc, I = 0)  
2N4123  
2N4124  
30  
25  
—
—
C
E
Collector–Base Breakdown Voltage  
(I = 10 Adc, I = 0)  
V
Vdc  
(BR)CBO  
2N4123  
2N4124  
40  
30  
—
—
C
E
Emitter–Base Breakdown Voltage  
(I = 10 Adc, I = 0)  
V
5.0  
—
Vdc  
nAdc  
nAdc  
(BR)EBO  
E
C
Collector Cutoff Current  
(V = 20 Vdc, I = 0)  
I
CBO  
—
—
50  
50  
CB  
Emitter Cutoff Current  
(V = 3.0 Vdc, I = 0)  
E
I
EBO  
EB  
C
ON CHARACTERISTICS(1)  
DC Current Gain  
(I =2.0 mAdc, VCE = 1.0 Vdc)  
C
h
FE  
50  
120  
—
—
2N4123  
2N4124  
(I = 50 mAdc, V  
C
= 1.0 Vdc)  
CE  
25  
60  
2N4123  
2N4124  
V
Vdc  
Vdc  
Collector–Emitter Saturation Voltage  
(I = 50mAdc, IB = 5.0 mAdc)  
C
CE(sat)  
—
—
0.3  
Base–Emitter Saturation Voltage  
V
BE(sat)  
ꢀ
(I = 50mAdc, IB = 5.0 mAdc)  
0.95  
C
ꢀ
SMALL-SIGNAL CHARACTERISTICS  
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2N4124  
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2N4124  
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2N4124  
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www.mccsemi.com  
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M C C  
2N4123  
2N4124  
Figure 2. Switching Times  
Figure 1. Capacitance  
200  
100  
10  
7.0  
t
s
5.0  
70  
50  
t
d
C
ibo  
30  
20  
3.0  
2.0  
t
f
t
r
C
obo  
V
= 3 V  
CC  
/I = 10  
10.0  
I
V
C B  
= 0.5 V  
7.0  
5.0  
EB(off)  
1.0  
0.1  
0.2 0.3 0.5 0.7 1.0  
2.0 3.0 5.0 7.0 10  
20 30 40  
1.0  
2.0 3.0  
5.0 7.0 10  
20 30  
50 70 100  
200  
REVERSE BIAS VOLTAGE (VOLTS)  
I
, COLLECTOR CURRENT (mA)  
C
Figure 4. Source Resistance  
Figure 3. Frequency Variations  
12  
10  
14  
12  
f = 1 kHz  
SOURCE RESISTANCE = 200  
= 1 mA  
I
= 1 mA  
C
I
C
I
= 0.5 mA  
10  
8
C
SOURCE RESISTANCE = 200  
= 0.5 mA  
8
6
4
2
0
I
= 50  
A
A
C
I
C
I
= 100  
SOURCE RESISTANCE = 1 k  
Ω
C
6
I
= 50  
A
C
4
2
0
SOURCE RESISTANCE = 500  
I
= 100  
A
C
0.1  
0.2  
0.4  
1
2
4
10  
20  
40  
100  
0.1  
0.2  
0.4  
1.0  
2.0  
4.0  
10  
20  
40  
100  
f, FREQUENCY (kHz)  
R
, SOURCE RESISTANCE (kΩ)  
S
Figure 5. Current Gain  
Figure 6. Qutput Admittance  
300  
200  
100  
50  
20  
10  
5
100  
70  
50  
2
1
30  
0.1  
0.2  
0.5  
1.0  
2.0  
5.0  
10  
0.1  
0.2  
0.5  
I , COLLECTOR CURRENT (mA)  
C
1.0  
2.0  
5.0  
10  
I
, COLLECTOR CURRENT (mA)  
C
www.mccsemi.com  
M C C  
2N4123  
2N4124  
Figure 7. Input Impedance  
Figure 8. Voltage Feedback Ratio  
10  
7.0  
5.0  
20  
10  
5.0  
2.0  
3.0  
2.0  
1.0  
0.5  
1.0  
0.7  
0.5  
0.2  
0.1  
0.2  
0.5  
1.0  
2.0  
5.0  
10  
0.1  
0.2  
0.5  
I , COLLECTOR CURRENT (mA)  
C
1.0  
2.0  
5.0  
10  
I
, COLLECTOR CURRENT (mA)  
C
Figure 9. DC Current Gain  
2.0  
1.0  
T
= +125°C  
J
V
CE  
= 1 V  
+25  
°C  
0.7  
0.5  
–55°C  
0.3  
0.2  
0.1  
0.1  
0.2  
0.3  
0.5  
0.7  
1.0  
2.0  
3.0  
5.0  
7.0  
10  
20  
30  
50  
70  
100  
200  
I
, COLLECTOR CURRENT (mA)  
C
Figure 10. Collector Saturation Region  
1.0  
0.8  
T
= 25°C  
J
I
= 1 mA  
10 mA  
30 mA  
100 mA  
C
0.6  
0.4  
0.2  
0
0.01  
0.02  
0.03  
0.05  
0.07 0.1  
0.2  
0.3  
0.5  
0.7  
1.0  
2.0  
3.0  
5.0  
7.0  
10  
I
, BASE CURRENT (mA)  
B
www.mccsemi.com  
M C C  
ꢀ
2N4123  
2N4124  
Figure 11. "ON" Voltages  
Figure 12. Temperature Coefficients  
1.2  
1.0  
1.0  
0.5  
T
= 25°C  
J
V
@ I /I = 10  
C B  
BE(sat)  
+25°C to +125°C  
for V  
CE(sat)  
VC  
0.8  
0
–0.5  
–1.0  
–1.5  
–2.0  
–55  
°
C to +25  
°
C
V
@ V  
CE  
= 1 V  
BE  
0.6  
0.4  
–55°  
C to +25  
°
C
V
@ I /I = 10  
C B  
CE(sat)  
+25°C to +125°C  
for V  
BE(sat)  
0.2  
0
VB  
1.0  
2.0  
5.0  
10  
20  
50  
100  
200  
0
20  
40  
60  
I , COLLECTOR CURRENT (mA)  
C
80  
100 120 140  
160 180 200  
I
, COLLECTOR CURRENT (mA)  
C
www.mccsemi.com  

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2N4123/D10Z

 200mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
TI
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