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2N3906 [MCC]

PNP General Purpose Amplifier; PNP通用放大器
2N3906
型号： 2N3906
厂家： Micro Commercial Components    Micro Commercial Components
描述：

PNP General Purpose Amplifier
PNP通用放大器

晶体 放大器 晶体管 开关 PC
文件： 总4页 (文件大小：95K)
中文：  中文翻译
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M C C  
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$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
2N3906  
Features  
·
·
Through Hole Package  
Capable of 600mWatts of Power Dissipation  
PNP General  
Purpose Amplifier  
Pin Configuration  
Bottom View  
C
B
E
TO-92  
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Symbol  
Parameter  
Min  
Max  
Units  
A
E
OFF CHARACTERISTICS  
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
IBL  
Collector-Emitter Breakdown Voltage*  
(IC=1.0mAdc, IB=0)  
40  
40  
Vdc  
Vdc  
Collector-Base Breakdown Voltage  
(IC=10mAdc, IE=0)  
Emitter-Base Breakdown Voltage  
(IE=10mAdc, IC=0)  
B
5.0  
Vdc  
Base Cutoff Current  
50  
50  
nAdc  
nAdc  
(VCE=30Vdc, VBE=3.0Vdc)  
Collector Cutoff Current  
(VCE=30Vdc, VBE=3.0Vdc)  
ICEX  
ON CHARACTERISTICS  
C
hFE  
DC Current Gain*  
(IC=0.1mAdc, VCE=1.0Vdc)  
(IC=1.0mAdc, VCE=1.0Vdc)  
(IC=10mAdc, VCE=1.0Vdc)  
(IC=50mAdc, VCE=1.0Vdc)  
(IC=100mAdc, VCE=1.0Vdc)  
Collector-Emitter Saturation Voltage  
(IC=10mAdc, IB=1.0mAdc)  
(IC=50mAdc, IB=5.0mAdc)  
Base-Emitter Saturation Voltage  
(IC=10mAdc, IB=1.0mAdc)  
(IC=50mAdc, IB=5.0mAdc)  
60  
80  
100  
60  
300  
30  
VCE(sat)  
0.25  
0.4  
Vdc  
Vdc  
D
VBE(sat)  
0.65  
250  
0.85  
0.95  
SMALL-SIGNAL CHARACTERISTICS  
fT  
Current Gain-Bandwidth Product  
(IC=10mAdc, VCE=20Vdc, f=100MHz)  
Output Capacitance  
(VCB=5.0Vdec, IE=0, f=100MHz)  
Input Capacitance  
(VBE=0.5Vdc, IC=0, f=100kHz)  
Noise Figure  
(IC=100mAdc, VCE=5.0Vdc, RS=1.0kW  
f=10Hz to 15.7kHz)  
MHz  
pF  
G
Cobo  
Cibo  
NF  
4.5  
10.0  
4.0  
DIMENSIONS  
MM  
pF  
INCHES  
MIN  
.175  
.175  
.500  
.016  
.135  
.095  
DIM  
A
B
C
D
MAX  
MIN  
4.45  
4.46  
12.7  
0.41  
3.43  
2.42  
MAX  
4.70  
4.70  
---  
NOTE  
dB  
.185  
.185  
---  
.020  
.145  
.105  
SWITCHING CHARACTERISTICS  
0.63  
3.68  
2.67  
E
G
td  
tr  
ts  
tf  
Delay Time  
Rise Time  
Storage Time  
Fall Time  
(VCC=3.0Vdc, VBE=0.5Vdc  
IC=10mAdc, IB1=1.0mAdc)  
(VCC=3.0Vdc, IC=10mAdc  
IB1=IB2=1.0mAdc)  
35  
35  
225  
75  
ns  
ns  
ns  
ns  
*Pulse Width £ 300ms, Duty Cycle£ 2.0%  
www.mccsemi.com  
2N3906  
M C C  
Base-Emitter ON Voltage vs  
Collector Current  
DC Current Gain vs Collector Current  
220  
200  
160  
120  
80  
1.2  
1.0  
VCE = 1.0V  
VCE = 5.0V  
TA = 25°C  
0.8  
hFE  
VBE(ON) - (V)  
0.6  
0.4  
TA = 100°C  
40  
0.2  
0
0.1  
10  
100  
1.0  
10  
100  
0.1  
1
IC - (mA)  
IC (mA)  
Collector-Emitter Saturation  
Volatge vs Collector Current  
Base-Emitter Saturation  
Voltage vs Collector Current  
1.4  
1.2  
0.6  
0.5  
0.4  
IC/IB = 10  
TA = 25°C  
IC/IB = 10  
TA = 25°C  
1.0  
0.8  
VBE(SAT) - (V)  
VCE(SAT) - (V)  
0.3  
0.2  
0.1  
0
0.6  
0.4  
0.2  
1.0  
100  
1000  
1.0  
1000  
10  
10  
100  
IC - (mA)  
IC - (mA)  
Common Base Open Circuit Input and  
Output Capacitance vs Reverse Bias Voltage  
Collector-Base Diode Reverse  
Current vs Temperature  
100  
10  
1.0  
COBO  
TA = 25°C  
TO-92  
8
6
4
VCB = 20V  
pF  
ICBO - (mA)  
CIBO  
1.0  
2
0
0.1  
25  
50  
75  
125 150  
0.1  
1.0  
Volts - (V)  
10  
0
100  
TJ - (°C)  
www.mccsemi.com  
2N3906  
M C C  
Maximum Power Dissipation vs  
Ambient Temperature  
Noise Figure vs  
Source Resistance  
800  
600  
400  
200  
0
12  
10  
8
VCE = 5.0V  
f = 1.0kHz  
IC = 1.0mA  
TO-92  
PD(MAX) - (mW)  
NF - (dB)  
6
4
2
0
IC = 100mA  
SOT-23  
50  
100  
150  
200  
1.0  
0
0.1  
10  
100  
TA - (°C)  
RS - (kW)  
Contours of Constant Gain  
Current Gain  
Bandwidth Product (f )  
T
24  
20  
16  
12  
1000  
V
CE = 10V  
f = 1.0kHz  
VCE - (V)  
hfe  
100  
8
4
0
10  
0.1  
0.1  
1.0  
10  
100  
1.0  
10  
IC - (mA)  
IC - (mA)  
*100MHz increments from 100  
to 700, 750 and 800MHz  
Switching Times vs  
Collector Current  
Noise Figure vs  
Frequency  
1000  
6
5
4
3
2
VCE = 5.0V  
I
B1 = IB2 = IC/10  
ts  
100  
T - (ns)  
tf  
IC = 100mA RS = 200W  
NF - (dB)  
10  
tr  
td  
IC = 1.0mA RS = 200W  
IC = 100mA RS = 2.0kW  
1
0
1.0  
0.1  
1.0  
100  
1.0  
10  
IC - (mA)  
100  
10  
f - (kHz)  
www.mccsemi.com  
2N3906  
M C C  
Output Admittance  
Input Impedance  
10  
1000  
VCE = 10V  
f = 1.0kHz  
VCE = 10V  
f = 1.0kHz  
hoe - (mW)  
100  
hie - (kW)  
1.0  
0.1  
0.1  
10  
1.0  
IC - (mA)  
10  
0.1  
1.0  
IC - (mA)  
10  
Turn On and Turn Off Times vs  
Collector Current  
Voltage Feedback Ratio  
100  
1000  
100  
toff  
h
fe - (X10-4)  
T - (ns)  
10  
ton  
10  
ton IB1 = IC/10  
BE(OFF) = 0.5V  
off IB1 = IB2 = IC/10  
V
t
1.0  
1.0  
0.1  
1.0  
10  
1.0  
10  
100  
IC - (mA)  
IC - (mA)  
www.mccsemi.com  

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