1N755 [MCC]
0.5W Silicon Planar Zener Diodes; 0.5W硅平面齐纳二极管
| 型号： | 1N755 |
| 厂家： | 
Micro Commercial Components |
| 描述： | 0.5W Silicon Planar Zener Diodes |
| 文件： | 总2页 (文件大小：349K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N746
THRU
1N759
M C C
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Features
·
·
·
Zener Voltage 3.3V to 12V
0.5W Silicon Planar
Zener Diodes
Silicon Planar Power Zener Diodes
Standards zener voltage tolerance is ±10%, Add suffix “ A” for
±5% tolerance, other tolerances are available upon request
Mechanical Data
·
·
·
Case: DO-35 glass case
Polarity: Color band denotes cathode end
Weight: Approx. 0.13 gram
DO-35
Maximum Ratings
D
Symbol
Value
See Table 1
Units
mW
Zener Current
Power Dissipation
Ptot
TJ
500
175
@ TA=50oC
o
Junction Temperature
Storage Temperature
Range
C
A
Cathode
Mark
o
TSTG
-65 to 175
C
B
D
Electrical Characteristics @ 25°C Unless Otherwise Specified
Symbol
Maximum
300
Unit
Thermal resistance
Forward Voltage
@ IF=200mA
JA
oC/W
C
R
VF
1.5
V
NOTE:
1) Valid provided that a distance of 8mm from case are kept
at ambient temperature
DIMENSIONS
2) Power derating: 4.0mW/oC above 50 C
o
INCHES
MIN
---
---
---
MM
MIN
---
---
---
25.40
DIM
A
B
C
D
MAX
.166
.079
.020
---
MAX
4.2
2.00
.52
NOTE
1.000
---
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M C C
1N746 thru 1N759
NORMAL
ZENER
MAXIMUM
ZENER
MAXIMUM
MAXIMUM REVERSE ZENER
TEST
MCC PART
NUMBER
VOLTAGE CURRENT IMPEDANCE LEAKAGE CURRENT CURRENT TYPICAL TEMP.
Vz@ Izt
VOLTS
3.3
Izt
mA
20
20
20
20
20
20
20
20
20
20
20
20
20
20
Zzt @ Izt
OHMS
28
Ir @ Vr=1V
I
COEFFICIENT
ZM
uA @25oC uA @125oC
mA
110
100
95
85
75
70
65
60
55
50
45
40
35
30
%/oC
1N746
1N747
1N748
1N749
1N750
1N751
1N752
1N753
1N754
1N755
1N756
1N757
1N758
1N759
10
10
10
2
30
30
30
30
30
20
20
20
20
20
20
20
20
20
-.066
3.6
24
-.058
3.9
23
-.046
4.3
22
-.033
4.7
19
2
-.015
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
17
11
1
1
±.010
+.030
+.049
+.053
+.057
+.060
+.061
+.062
+.062
7.0
5.0
6.0
8.0
10
0.1
0.1
0.1
0.1
0.1
0.1
0.1
17
30
12
Note:
1) Tested with pulses t p = 20ms
2) Valid provided that leads are kept at ambient temperature at a
distance of 8mm from case.
3) Zener impedance derived by superimposing on IZT, a 60 cps, rms
ac current equal to 10% IZT (2 mA ac)
4) Allowance has been made for the increase in V due to Z and for
Z
Z
the increase in junction temperature as the unit approaches
thermal equilibrium at the power dissipation of 400mW.
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