1N5819G [MCC]
Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DO-41, GLASS, DO-41G, 2 PIN;
| 型号： | 1N5819G |
| 厂家： | 
Micro Commercial Components |
| 描述： | Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DO-41, GLASS, DO-41G, 2 PIN 瞄准线 二极管 |
| 文件： | 总2页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
M C C
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20736 Marilla Street Chatsworth
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TM
1N5817G
THRU
1N5819G
Micro Commercial Components
Features
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·
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Metal silicon junction, majority carrier conduction
1.0 Amp Schottky
Barrier Rectifier
20 to 40 Volts
For surface mount application
Low power loss, high efficiency
High current capability, low forward voltage drop.
High surge capability
For use in low voltage, high frequency inverters, free wheeling,
and polarity protection applications.
·
High temperature soldering guaranteed: 250°C/10 seconds at
terminals
DO-41G
Maximum Ratings
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Case: Molded Glass Body
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Typical Thermal Resistance; 30°C/W Junction To Lead
75°C/W Junction To Ambient
D
Maximum
Recurrent
Peak Reverse
Voltage
Maximum DC
Blocking
MCC
Part Number
Maximum
RMS Voltage
A
Voltage
Cathode
Mark
1N5817G
1N5818G
1N5819G
20V
30V
40V
14V
21V
28V
20V
30V
40V
B
D
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
IF(AV)
1.0A
TA = 25°C*
C
Peak Forward Surge
Current
IFSM
30A
8.3ms, half sine
Maximum
Instantaneous
Forward Voltage
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
VF
IR
0.5V
IFM = 1.0A;
TJ = 25°C*
DIMENSIONS
INCHES
M M
DIM
NOTE
MIN
MAX
0.205
0.107
0.034
-----
MIN
4.10
2.00
0.70
MAX
7.60
3.60
0.90
-----
1.0mA TJ = 25°C
10mA
A
B
C
D
0.166
0.080
0.026
1.000
TJ = 125°C
Diameter
Diameter
Typical Junction
Capacitance
CJ
110pF
Measured at
1.0MHz, VR=4.0V
25.40
*Pulse test: Pulse width 300 msec, Duty cycle 1%
www.mccsemi.com
Revision: 3
2002/12/31
M C C
TM
1N5817G thru 1N5819G
Micro Commercial Components
FIG.2-MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
FIG.1-FORWARD CURRENT DERATING CURVE
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L
At rated T
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
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P. C . B. mo u n t e d o n
0.24 X 0.24"(6.0 X 6.0mm)
copper pad areasH
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RESISTIVE OR INDUCTIVE LOAD
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ꢂ
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LEAD TEMPERATURE ( C)
NUMBER OF CYCLES AT 60Hz
FIG.3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG.4-TYPICAL REVERSE CHARACTERISTICS
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T =125
J
°C
PULSE WIDTH=300
1% DUTY CYCLE
S
J
T =125 C
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ꢂ
ꢀ
J
T =75 C
T =25°C
J
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J
T =25 C
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INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
PERCENT OF RATED PEAK REVERSE VOLTAGE%
FIG.5-TYPICAL JUNCTION CAPACITANCE
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T
J
=25 C
f=1.0MH
Vsig=50mVp-p
Z
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ꢂ
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REVERSE VOLTAGE. VOLTS
www.mccsemi.com
Revision: 3
2002/12/31
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