79C0832RPQI20 [MAXWELL]
8 Megabit EEPROM MCM; 8兆位EEPROM MCM
| 型号： | 79C0832RPQI20 |
| 厂家： | 
MAXWELL TECHNOLOGIES |
| 描述： | 8 Megabit EEPROM MCM |
| 文件： | 总19页 (文件大小：482K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
79C0832
8 Megabit (256K x 32-Bit)
EEPROM MCM
FEATURES:
DESCRIPTION:
• 256k x 32-bit EEPROM MCM
• RAD-PAK® radiation-hardened against natural
• space radiation
Maxwell Technologies’ 79C0832 multi-chip module (MCM)
memory features a greater than 100 krad (Si) total dose toler-
ance, dependent upon orbit. Using Maxwell Technologies’ pat-
ented radiation-hardened RAD-PAK® MCM packaging
technology, the 79C0832 is the first radiation-hardened 8
megabit MCM EEPROM for space application. The 79C0832
uses eight 1 Megabit high speed CMOS die to yield an 8
megabit product. The 79C0832 is capable of in-system electri-
cal byte and page programmability. It has a 128 x 8 byte page
programming function to make its erase and write operations
faster. It also features Data Polling and a Ready/Busy signal to
indicate the completion of erase and programming operations.
In the 79C0832, hardware data protection is provided with the
RES pin, in addition to noise protection on the WE signal and
write inhibit on power on and off. Software data protection is
implemented using the JEDEC optional standard algorithm.
• Total dose hardness:
- >100 krad (Si)
- Dependent upon orbit
• Excellent Single event effects
- SEL > 120 MeV/mg/cm2
TH
- SEU > 90 MeV/mg/cm2 read mode
- SEU = 18 MeV/mg/cm2 write mode
• High endurance
- 10,000 cycles/byte (Page Programming Mode)
- 10 year data retention
• Page Write Mode: 1 to 8 X 128 byte page
• High Speed:
- 150 and 200 ns maximum access times
• Automatic programming
- 10 ms automatic Page/Byte write
• Low power dissipation
Maxwell Technologies' patented RAD-PAK® packaging technol-
ogy incorporates radiation shielding in the microcircuit pack-
age. It eliminates the need for box shielding while providing
the required radiation shielding for a lifetime in orbit or space
mission. In a GEO orbit, RAD-PAK provides greater than 100
krad (Si) radiation dose tolerance. This product is available
with screening up to Maxwell Technologies self-defined Class
K.
- 160 mW/MHz active current
- 880 µW standby current
02.14.06 REV 15
1
All data sheets are subject to change without notice
(858) 503-3300 - Fax: (858) 503-3301 - www.maxwell.com
©2006 Maxwell Technologies
All rights reserved.
79C0832
8 Megabit (256K x 32-Bit) EEPROM MCM
TABLE 1. 79C0832 PINOUT DESCRIPTION
PIN
SYMBOL
DESCRIPTION
84-77, 29-37
ADDR0 to ADDR16 Address Input
48-55, 66-73, 96,
1-7, 18-25
I/O0 to I/O31
Data Input/Output
61
41, 43
45
OE
CE0-1
WE
Output Enable
Chip Enable 0 through 1
Write Enable
10, 17, 28, 40, 44,
58, 65, 76, 87, 93
5V
Power Supply
8, 9, 11-16, 26, 27,
38, 42, 46, 56, 57,
59, 60, 62-64, 74,
75, 85, 86, 88-92,
94, 95
GND
Ground
39
47
RDY/BUSY
RES
Ready/Busy
Reset
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02.14.06 REV 15
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©2006 Maxwell Technologies
All rights reserved
79C0832
8 Megabit (256K x 32-Bit) EEPROM MCM
TABLE 2. 79C0832 ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Supply Voltage
Input Voltage
V
-0.6
7.0
7.0
V
V
CC
V
-0.51
IN
Package Weight
RP
RT
45
38
Grams
XP
TBD
3
Thermal Impedance
FJC
TOPR
TSTG
°C/W
°C
Operating Temperature Range
Storage Temperature Range
-55
-65
125
150
°C
1. V min = -3.0V for pulse width <50ns.
IN
TABLE 3. 79C0832 RECOMMENDED DC OPERATING CONDITIONS
PARAMETER
SYMBOL
MIN
MAX
UNIT
Supply Voltage
Input Voltage
V
4.5
-0.31
2.2
5.5
0.8
V
CC
V
V
V
V
IL
V
V
CC +0.3
CC +1
125
IH
RES_PIN
V
V -0.5
V
H
CC
Operating Temperature Range
TOPR
-55
°C
1. V min = -1.0V for pulse width < 50 ns
IL
1
TABLE 4. DELTA LIMITS
2
PARAMETER
VARIATION
ICC1A
+/- 10 %
+/- 10 %
+/- 10 %
+/- 10 %
+/- 10 %
ICC1D
ICC2A
ILI - ADDR, CE, OE, WE
ILI - D0-D31
1. Parameters are measured and recorded per MIL-STD-883 for Class K devices
2. Specified value in Table 6
All data sheets are subject to change without notice
02.14.06 REV 15
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©2006 Maxwell Technologies
All rights reserved
79C0832
8 Megabit (256K x 32-Bit) EEPROM MCM
TABLE 5. 79C0832 CAPACITANCE
(T = 25 °C, f = 1 MHz)
A
PARAMETER
Input Capacitance : V = 0V
SYMBOL
MIN
MAX
UNIT
1
CIN OE
6
6
pF
IN
C WE
IN
C CE0-1
6
IN
C A0-A16
6
IN
CIN RES
48
6
1
Output Capacitance: VOUT = 0V
COut RDY/BSY
pF
CO ut D0-D31
--
12
1. Guaranteed by design.
TABLE 6. 79C0832 DC ELECTRICAL CHARACTERISTICS
(V = 5V ±10%, TA = -55 TO +125°C)
CC
PARAMETER
TEST CONDITION
SYMBOL SUBGROUPS
MIN
MAX
10 2
1.12
4
UNITS
Input Leakage Current1 V = V
A0-A16, CE,WE, OE
ILI
1, 2, 3
--
µA
mA
µA
IN
CC
V = 0V
IN
Input Leakage Current V =V
D0-D31
ILI
1, 2, 3
IN CC
Output Leakage Current (VCC = 5.5V, VOUT = 5.5V/0.4V)
ILO
1, 2, 3
1, 2, 3
--
--
4
µA
µA
mA
mA
mA
mA
Standby VCC Current1
CE = ADDR=WE=OE =V
ICC1A
ICC1B
ICC1C
ICC1D
ICC2A
80
4
CC
CE = V ADDR=WE=OE =V
IH;
CC
CE = ADDR=WE=OE =V
--
--
45
25
60
IH
CE =V , ADDR=WE=OE =0V
IH
Operating
CC Current1,3
OE = 0V ADDR=WE=V
IOUT = 0mA, CE Duty = 100%,
Cycle = 1 us at VCC = 5.5V
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
CC
V
OE =ADDR=WE=0V
ICC2B
ICC2C
ICC2D
--
85
200
225
0.8
mA
mA
mA
V
IOUT = 0mA, CE Duty = 100%,
Cycle = 1 us at VCC = 5.5V
OE = 0V ADDR=WE=V
--
CC
IOUT = 0mA, CE Duty = 100%,
Cycle = 150 ns at VCC = 5.5V
OE =ADDR=WE=0V
IOUT = 0mA, CE Duty = 100%,
Cycle = 150 ns at VCC = 5.5V
Input Voltage
V
IL
V
2.2
IH
RES_PIN
V
VCC -0.5
H
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02.14.06 REV 15
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©2006 Maxwell Technologies
All rights reserved
79C0832
8 Megabit (256K x 32-Bit) EEPROM MCM
TABLE 6. 79C0832 DC ELECTRICAL CHARACTERISTICS
(V = 5V ±10%, TA = -55 TO +125°C)
CC
PARAMETER
TEST CONDITION
SYMBOL SUBGROUPS
MIN
MAX
UNITS
Output Voltage
Data Lines: V Min, IOL= 2.1mA
V
1, 2, 3
--
0.4
0.4
--
--
--
V
V
V
V
V
CC
OL
RDY/BSY_Line: VCC Min, IOL = 12mA
Data Lines: VCC Min, IOH = -400µA
RDY/BSY_Line: VCC Min, IOH = -12mA
V
OL
V
2.4
3.15
CC - 0.3V
OH
V
OH
All Outputs: V Min , IOH = -100uA
V
CC
1. All Inputs are tied to VCC with a 5.5KW resistor, except for RES which is 30KW.
2. For RES ILI=800uA max.
3. Only one CE Active (Low)
1
TABLE 7. 79C0832 AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION
(V = 5V ±10%, TA = -55 TO +125°C)
CC
PARAMETER
SYMBOL
SUBGROUPS
MIN
MAX
UNIT
Address Access Time CE = OE = V , WE = V
tACC
9, 10, 11
ns
IL
IH
-150
-200
--
--
150
200
Chip Enable Access Time OE = V , WE = V
-150
-200
tCE
tOE
tOH
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
ns
ns
ns
IL
IH
--
--
150
200
Output Enable Access TIme CE = V , WE = V
IL
IH
-150
-200
0
0
75
125
Output Hold to Address Change CE = OE =V , WE = V
-150
-200
IL
IH
0
0
--
--
Output Disable to High-Z 2
CE = V , WE = V
tDF
ns
ns
IL
IH
-150
-200
0
0
50
60
CE = OE = V , WE = V
tDFR
IL
IH
-150
-200
0
0
350
450
3
RES to Output Delay CE = OE = V , WE = V
TRR
9, 10, 11
ns
IL
IH
-150
-200
0
0
450
650
1. Test conditions: input pulse levels = 0.4V to 2.4V; input rise and fall times < 20 ns; output load = 1 TTL gate + 100 pF (including
scope and jig); reference levels for measuring timing = 0.8 V/1.8 V.
2. tDF and tDFR are defined as the time at which the output becomes an open circuit and data is no longer driven.
3. Guaranteed by design.
All data sheets are subject to change without notice
02.14.06 REV 15
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©2006 Maxwell Technologies
All rights reserved
79C0832
8 Megabit (256K x 32-Bit) EEPROM MCM
TABLE 8. 79C0832 AC ELECTRICAL CHARACTERISTICS FOR WRITE OPERATION
(V = 5V ±10%, TA = -55 TO +125°C)
CC
1
PARAMETER
SYMBOL
SUBGROUPS
MAX
UNITS
MIN
Address Setup Time
tAS
9, 10, 11
ns
-150
-200
0
0
--
--
Chip Enable to Write Setup Time (WE controlled)
-150
-200
tCS
9, 10, 11
9, 10, 11
ns
0
0
--
--
Write Pulse Width
CE controlled
-150
-200
WE controlled
-150
tCW
ns
ns
250
350
--
--
tWP
250
350
--
--
-200
Address Hold Time
-150
-200
tAH
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
ns
ns
ns
ns
ns
ns
ns
ns
ms
150
200
--
--
Data Setup Time
-150
-200
tDS
100
150
--
--
Data Hold Time
-150
-200
tDH
10
10
--
--
Chip Enable Hold Time (WE controlled)
-150
-200
tCH
0
0
--
--
Write Enable to Write Setup Time (CE controlled)
-150
-200
tWS
tWH
tOES
tOEH
tWC
0
0
--
--
Write Enable Hold Time (CE controlled)
-150
-200
0
0
--
--
Output Enable to Write Setup Time
-150
-200
0
0
--
--
Output Enable Hold Time
-150
-200
0
0
--
--
Write Cycle Time 2
-150
-200
--
--
10
10
All data sheets are subject to change without notice
02.14.06 REV 15
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©2006 Maxwell Technologies
All rights reserved
79C0832
8 Megabit (256K x 32-Bit) EEPROM MCM
TABLE 8. 79C0832 AC ELECTRICAL CHARACTERISTICS FOR WRITE OPERATION
(V = 5V ±10%, TA = -55 TO +125°C)
CC
1
PARAMETER
SYMBOL
SUBGROUPS
MAX
UNITS
MIN
Data Latch Time
tDL
9, 10, 11
ns
-150
-200
300
400
--
--
Byte Load Window
-150
-200
tBL
tBLC
tDB
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
µs
µs
ns
ns
µs
µs
100
200
--
--
Byte Load Cycle
-150
-200
.55
.95
30
30
Time to Device Busy
-150
-200
120
170
--
--
Write Start Time 3
-150
-200
tDW
150
250
--
--
RES to Write Setup Time4
-150
-200
tRP
100
200
--
--
V
CC to RES Setup Time4
tRES
-150
-200
1
3
--
--
1. Use this device in a longer cycle than this value.
2. tWC must be longer than this value unless polling techniques or RDY/BUSY are used. This device automatically completes the
internal write operation within this value.
3. Next read or write operation can be initiated after tDW if polling techniques or RDY/BUSY are used.
4. Guaranteed by design.
1
TABLE 9. 79C0832 MODE SELECTION
CE 2
PARAMETER
OE
WE
I/O
RES
RDY/BUSY
Read
V
V
V
DOUT
V
V
IL
IL
IH
H
OH
Standby
Write
V
X
X
High-Z
X
V
IH
OH
V
V
V
D
V
VOH --> V
OL
IL
IH
IL
IN
H
Deselect
Write Inhibit
V
V
V
High-Z
V
V
OH
IL
IH
IH
H
X
X
X
V
--
--
X
X
--
--
IH
V
X
IL
Data Polling
V
V
V
Data Out (I/O7)
High-Z
V
V
OL
IL
IL
IH
H
Program Reset
X
X
X
V
V
OH
L
1. Refer to the recommended DC operating conditions.
2. For CE0-1 only one CE can be used (“on”) at a time.
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02.14.06 REV 15
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All rights reserved
79C0832
8 Megabit (256K x 32-Bit) EEPROM MCM
FIGURE 1. READ TIMING WAVEFORM
FIGURE 2. BYTE WRITE TIMING WAVEFORM (1) (WE CONTROLLED)
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All rights reserved
79C0832
8 Megabit (256K x 32-Bit) EEPROM MCM
FIGURE 3. BYTE WRITE TIMING WAVEFORM (2) (CE CONTROLLED)
FIGURE 4. PAGE WRITE TIMING WAVEFORM (1) (WE CONTROLLED)
1) A7-A16 are Page Addresses and must be the same within a Page Write Operation.
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All rights reserved
79C0832
8 Megabit (256K x 32-Bit) EEPROM MCM
FIGURE 5. PAGE WRITE TIMING WAVEFORM (2) (CE CONTROLLED)
1
1) A7-A16 are Page Addresses and must be the same within a Page Write Operation.
FIGURE 6. DATA POLLING TIMING WAVEFORM
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©2006 Maxwell Technologies
All rights reserved
79C0832
8 Megabit (256K x 32-Bit) EEPROM MCM
FIGURE 7. SOFTWARE DATA PROTECTION TIMING WAVEFORM (1) (IN PROTECTION MODE)
FIGURE 8. SOFTWARE DATA PROTECTION WAVEFORM (2) (IN NON-PROTECTION MODE)
EEPROM APPLICATION NOTES
This application note describes the programming procedures for the EEPROM modules and with details of various
techniques to preserve data integrity.
Automatic Page Write
Page-mode write feature allows 1 to 128 bytes of data to be written into the EEPROM in a single write cycle. Loading
the first byte of data, the data load window opens 30µs for the second byte. In the same manner each additional byte
of data can be loaded within 30µs of the preceding falling edge of either WE or CE. When CE and WE are kept high
for 100µs after data input, the EEPROM enters the write mode automatically and the data input is written into the
EEPROM.
WE, CE Pin Operation
During a write cycle, addresses are latched by the falling edge of WE or CE, and data is latched by the rising edge of
WE or CE.
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02.14.06 REV 15
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©2006 Maxwell Technologies
All rights reserved
79C0832
8 Megabit (256K x 32-Bit) EEPROM MCM
Data Polling
Data Polling function allows the status of the EEPROM to be determined. If EEPROM is set to read mode during a
write cycle, an inversion of the last byte of data to be loaded outputs from I/O 7 to indicate that the EEPROM is per-
forming a write operation.
RDY/Busy Signal
RDY/Busy signal also allows a comparison operation to determine the status of the EEPROM. The RDY/Busy signal
goes low (VOL) after the first write signal. At the end of the write cycle, the RDY/Busy returns to a high state ( V ).
OH
RES Signal
When RES is LOW (V ), the EEPROM cannot be read or programmed. The EEPROM data must be protected by
L
keeping RES low when V is power on and off. RES should be high (V ) during read and programming operations.
CC
H
Data Protection
To protect the data during operation and power on/off, the EEPROM has the internal functions described below.
1. Data Protection against Noise of Control Pins (CE, OE, WE) during Operation.
During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to programming
mode by mistake. To prevent this phenomenon, the EEPROM has a noise cancellation function that cuts noise if its
width is 20ns or less in programming mode. Be careful not to allow noise of a width more than 20ns on the control
pins.
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©2006 Maxwell Technologies
All rights reserved
79C0832
8 Megabit (256K x 32-Bit) EEPROM MCM
2. Data Protection at V on/off
CC
When V is turned on or off, noise on the control pins generated by external circuits, such as CPUs, may turn the EEPROM to
CC
programming mode by mistake. To prevent this unintentional programming, the EEPROM must be kept in unprogrammable
state during VCC on/off by using a CPU reset signal to RES pin.
3. RES Signal
RES should be kept at V level when VCC is turned on or off. The EEPROM breaks off programming operation when RES
SS
become low, programming operation doesn’t finish correctly in case that RES falls low during programming operation. RES
should be kept high for 10 ms after the last data is input
.
10ms
4. Software Data Protection Enable
The 79C0832 contains a software controlled write protection feature that allows the user to inhibit all write operations to the
device. This is useful in protecting the device from unwanted write cycles due to uncontrollable circuit noise or inadvertent
writes caused by minor bus contentions. Software data protection is enabled by writing the following data sequence to the
EEPROM and allowing the write cycle period (tWC) of 10ms to elapse:
.
Software Data Protection Enable Sequence
Address
Data
5555
AA AA AA AA
55 55 55 55
AAAA or 2AAA
5555
A0 A0 A0 A0
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©2006 Maxwell Technologies
All rights reserved
79C0832
8 Megabit (256K x 32-Bit) EEPROM MCM
5. Writing to the Memory with Software Data Protection Enabled
To write to the device once Software protection is enabled, the enable sequence must precede the data to be written. This
sequence allows the write to occur while at the same time keeping the software protection enabled
Sequence for Writing Data with Software Protection Enabled.
Address
Data
5555
AA AA AA AA
55 55 55 55
AAAA or 2AAA
5555
A0 A0 A0 A0
Write Address(s)
Normal Data Input
6. Disabling Software Protection
Software data protection mode can be disabled by inputting the following 6 bytes sequence. Once the software protection
sequence has been written, no data can be written to the memory until the write cycle (TWC) has elapsed.
Software Protection Disable Sequence
Address
Data
5555
AA AA AA AA
55 55 55 55
AAAA or 2AAA
80 80 80 80
AA AA AA AA
5555
5555
AAAA or 2AAA
5555
55 55 55 55
20 20 20 20
Devices are shipped in the “unprotected” state, meaning that the contents of the memory can be changed as
required by the user. After the software data protection is enabled, the device enters the Protect Mode
where no further write commands have any effect on the memory contents.
All data sheets are subject to change without notice
02.14.06 REV 15
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©2006 Maxwell Technologies
All rights reserved
79C0832
8 Megabit (256K x 32-Bit) EEPROM MCM
96-PIN RAD-PAK® QUAD FLAT PACKAGE
DIMENSION
SYMBOL
MIN
NOM
MAX
A
b
.184
.010
---
.200
.012
.009
1.420
1.162
.050
.129
2.528
2.500
1.700
.165
96
.216
.013
c
.012
D
D1
e
1.408
1.432
S1
L
---
2.485
---
2.543
2.505
L1
L2
A1
N
.152
.178
Note: All dimensions in inches
All data sheets are subject to change without notice
02.14.06 REV 15
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©2006 Maxwell Technologies
All rights reserved
79C0832
8 Megabit (256K x 32-Bit) EEPROM MCM
A1
Pin #1 ID
c
S1
MAXWELL
e
b
TECHNOLOGIES
L2
D1
D(sq)
L1(sq)
A
L(sq)
96 PIN RAD-TOLERANT QUAD FLAT PACKAGE
DIMENSION
SYMBOL
MIN
NOM
MAX
A
b
.167
.010
--
.183
.012
.009
1.420
1.162
.050
.129
2.528
2.500
1.700
.165
96
.199
.013
c
.012
D
D1
e
1.408
1.432
S1
L
--
2.543
2.505
L1
L2
A1
N
2.485
.152
.178
Note: All dimensions in inches
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02.14.06 REV 15
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©2006 Maxwell Technologies
All rights reserved
79C0832
8 Megabit (256K x 32-Bit) EEPROM MCM
96 PIN XRAYL QUAD FLAT PACKAGE
DIMENSION
SYMBOL
MIN
NOM
MAX
A
b
.200
.007
.222
.010
.245
.013
c
.009
.009
.013
D
D1
e
1.690
1.707
1.150
0.050
.278
1.725
S1
L
3.000
2.985
2.090
.115
3.020
3.000
2.200
.130
3.040
3.005
2.210
.145
L1
L2
A1
N
96
Note: All dimensions in inches
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02.14.06 REV 15
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©2006 Maxwell Technologies
All rights reserved
79C0832
8 Megabit (256K x 32-Bit) EEPROM MCM
Important Notice:
These data sheets are created using the chip manufacturers published specifications. Maxwell Technologies verifies
functionality by testing key parameters either by 100% testing, sample testing or characterization.
The specifications presented within these data sheets represent the latest and most accurate information available to
date. However, these specifications are subject to change without notice and Maxwell Technologies assumes no
responsibility for the use of this information.
Maxwell Technologies’ products are not authorized for use as critical components in life support devices or systems
without express written approval from Maxwell Technologies.
Any claim against Maxwell Technologies must be made within 90 days from the date of shipment from Maxwell Tech-
nologies. Maxwell Technologies’ liability shall be limited to replacement of defective parts.
All data sheets are subject to change without notice
02.14.06 REV 15
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©2006 Maxwell Technologies
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79C0832
8 Megabit (256K x 32-Bit) EEPROM MCM
Product Ordering Options
Model Number
79C0832
XX
Q
X
-XX
Option Details
Feature
Access Time
15 = 150 ns
20 = 200 ns
Multi Chip Module (MCM)1
Screening Flow
K = Maxwell Self-Defined Class K
H = Maxwell Self-Defined Class H
I = Industrial (testing @ -55°C,
+25°C, +125°C)
E = Engineering (testing @ +25°C)
Q = Quad Flat Pack
Package
RP = RAD-PAK® package
XP = Xray-PakL Package
RT1 = Guaranteed to 10 krad at
die level
Radiation Feature
RT2 = Guaranteed to 25 krad at
die level
RT4 = Guaranteed to 40 krad at
8 Megabit (256K x 32-Bit)
EEPROM MCM
Base Product
Nomenclature
1) Products are manufactureded and screened to Maxwell Technologies self-defined Class H and Class K flows.
All data sheets are subject to change without notice
02.14.06 REV 15
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