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79C0408RT4RFK-15 [MAXWELL]

EEPROM Module,;
79C0408RT4RFK-15
型号： 79C0408RT4RFK-15
厂家： MAXWELL TECHNOLOGIES    MAXWELL TECHNOLOGIES
描述：

EEPROM Module,

可编程只读存储器 电动程控只读存储器 电可擦编程只读存储器
文件： 总20页 (文件大小：424K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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79C0408  
4 Megabit (512k x 8-bit)  
EEPROM MCM  
CE  
CE  
CE  
3
CE  
1
2
4
RES  
R/B  
WE  
OE  
A0-16  
79C0408  
128Kx8  
128Kx8  
128Kx8  
128Kx8  
I/O  
0-7  
Logic Diagram  
FEATURES  
D
ESCRIPTION  
:
•
•
Four 128k x 8-bit EEPROMs MCM  
AD-PAK® radiation-hardened against natural  
space radiation  
Maxwell Technologies’ 79C0408 multi-chip module (MCM)  
memory features a greater than 100 krad (Si) total dose toler-  
ance, depending upon space mission. Using Maxwell Technol-  
R
•
•
Total dose hardness:  
ogies’ patented radiation-hardened  
R
AD-PAK  
®
MCM  
- > 100 krad (Si), depending upon space mission  
Excellent Single event effects @ 25°C  
- SELTH > 120 MeV cm2/mg (Device)  
- SEUTH > 90 MeV cm2/mg (Memory Cells)  
- SEU TH > 18 MeV cm2/mg (Write Mode)  
- SETTH > 40 MeV cm2/mg (Read Mode)  
Package:  
- 40 pin RAD-PAK® flat pack  
- 40 pin X-Ray PakTM flat pack  
- 40 pin Rad-Tolerant flat pack  
High speed:  
packaging technology, the 79C0408 is the first radiation-hard-  
ened 4 Megabit MCM EEPROM for space applications. The  
79C0408 uses four 1 Megabit high-speed CMOS die to yield a  
4 Megabit product. The 79C0408 is capable of in-system elec-  
trical Byte and Page programmability. It has a 128 bytes Page  
Programming function to make its erase and write operations  
faster. It also features Data Polling and a Ready/Busy signal to  
indicate the completion of erase and programming operations.  
In the 79C0408, hardware data protection is provided with the  
RES pin, in addition to noise protection on the WE signal.  
Software data protection is implemented using the JEDEC  
optional standard algorithm.  
•
•
•
•
•
- 120, 150, and 200 ns maximum access times  
available  
•
•
•
•
Data Polling and Ready/Busy signal  
Software data protection  
Write protection by RES pin  
High endurance  
- 10,000 erase/write (in Page Mode),  
- 10 year data retention  
Page write mode: 1 to 128 byte page  
Low power dissipation  
Maxwell Technologies' patented RAD-PAK® packaging technol-  
ogy incorporates radiation shielding in the microcircuit pack-  
age. It eliminates the need for box shielding while providing  
the required radiation shielding for a lifetime in orbit or space  
mission. In a GEO orbit, the RAD-PAK® package provides  
greater than 100 krad (Si) radiation dose tolerance. This prod-  
uct is available with screening up to Maxwell Technologies’  
self-defined Class K.  
•
•
- 80 mW/MHz active mode  
- 440 µW standby mode  
09.17.13 Rev 18  
1
All data sheets are subject to change without notice  
(858) 503-3300 - Fax: (858) 503-3301- www.maxwell.com  
©2013 Maxwell Technologies  
All rights reserved.  
79C0408  
4 Megabit (512k x 8-bit) EEPROM MCM  
TABLE 1. 79C0408 PIN  
D
ESCRIPTION  
PIN  
SYMBOL  
DESCRIPTION  
16-9, 32-31,  
28, 30, 8, 33,  
7, 36, 6  
A0 to A16  
Address Input  
17-19, 22-26  
I/O0 to I/O7  
OE  
Data Input/Output  
Output Enable  
Chip Enable 1 through 4  
Write Enable  
Power Supply  
Ground  
29  
2, 3, 39, 38  
34  
CE1-4  
WE  
1, 27, 40  
4, 20, 21, 37  
5
VCC  
VSS  
RDY/BUSY  
RES  
Ready/Busy  
35  
Reset  
TABLE 2. 79C0408 ABSOLUTE  
M
AXIMUM  
R
ATINGS  
P
ARAMETER  
S
YMBOL  
M
IN  
MAX  
UNIT  
Supply Voltage  
Input Voltage  
VCC  
VIN  
RP  
RT  
Tjc  
-0.6  
-0.51  
7.0  
7.0  
23  
V
V
Package Weight  
Grams  
10  
Thermal Resistance ( RP Package)  
Operating Temperature Range  
Storage Temperature Range  
7.3  
125  
150  
°C/W  
°C  
°C  
TOPR  
TSTG  
-55  
-65  
1. VIN MIN = -3.0V FOR PULSE WIDTH <50NS  
.
TABLE 3. 79C0408 RECOMMENDED  
O
PERATING  
C
ONDITIONS  
PARAMETER  
S
YMBOL  
M
IN  
M
AX  
U
NIT  
Supply Voltage  
Input Voltage  
VCC  
4.5  
-0.31  
2.2  
5.5  
V
VIL  
VIH  
VH  
0.8  
VCC +0.3  
VCC +1  
V
V
V
RES_PIN  
VCC-0.5  
Case Operating Temperature  
TC  
-55  
125  
°C  
1. VIL min = -1.0V for pulse width < 50 ns  
09.17.13 Rev 18  
All data sheets are subject to change without notice  
2
©2013 Maxwell Technologies  
All rights reserved.  
79C0408  
4 Megabit (512k x 8-bit) EEPROM MCM  
1
T
ABLE 4. 79C0408 CAPACITANCE  
(TA = 25 °C, f = 1 MHz)  
P
ARAMETER  
S
YMBOL  
M
IN  
MAX  
UNIT  
Input Capacitance: VIN = 0 V 1  
CIN  
pf  
WE  
--  
24  
CE1-4  
OE  
A0-16  
--  
--  
--  
6
24  
24  
Output Capacitance: VOUT = 0 V 1  
COUT  
48  
pF  
1. Guaranteed by design.  
TABLE 5. DELTA  
P
ARAMETERS  
C
P
ARAMETER  
ONDITION  
ICC1  
ICC2  
ICC3  
ICC4  
+ 10% of value in Table 6  
+ 10% of value in Table 6  
+ 10% of value in Table 6  
+ 10% of value in Table 6  
T
ABLE 6. 79C0408 DC ELECTRICAL  
C
HARACTERISTICS  
(VCC = 5V ±10%, TA = -55 TO +125°C)  
PARAMETER  
TEST  
C
ONDITION  
S
YMBOL  
SUBGROUPS  
M
IN  
M
AX  
UNITS  
Input Leakage Current  
VCC = 5.5V, VIN = 5.5V1  
IIL  
1, 2, 3  
µA  
CE1-4  
--  
2 1  
OE, WE  
A0-16  
--  
--  
--  
--  
--  
--  
8
8
Output Leakage Current VCC = 5.5V, VOUT = 5.5V/0.4V  
ILO  
1, 2, 3  
8
µA  
µA  
mA  
mA  
Standby VCC Current  
CE = VCC  
CE = VIH  
ICC1  
ICC2  
ICC3  
80  
4
Operating VCC Current2 IOUT = 0mA, Duty = 100%,  
Cycle = 1µs at VCC = 5.5V  
1, 2, 3  
1, 2, 3  
1, 2, 3  
15  
IOUT = 0mA, Duty = 100%,  
Cycle = 150ns at VCC = 5.5V  
ICC4  
--  
50  
Input Voltage  
RES_PIN  
VIL  
VIH  
VH  
--  
0.8  
--  
V
V
2.2  
VCC -0.5  
--  
Output Voltage3  
IOL = 2.1 mA  
IOH = -0.4 mA  
VOL  
VOH  
1, 2, 3  
--  
0.4  
--  
2.4  
09.17.13 Rev 18  
All data sheets are subject to change without notice  
3
©2013 Maxwell Technologies  
All rights reserved.  
79C0408  
4 Megabit (512k x 8-bit) EEPROM MCM  
1. ILI on RES = 100 uA max.  
2. Only one CE\ Active.  
3. RDY/BSY is an open drain output. Only Vol applies to this pin.  
1
T
ABLE 7. 79C0408 AC ELECTRICAL  
C
HARACTERISTICS FOR  
(VCC = 5V ±10%, TA = -55 TO +125°C)  
READ  
O
PERATIONS  
PARAMETER  
S
YMBOL  
S
UBGROUPS  
M
IN  
M
AX  
UNIT  
Address Access Time CE = OE = VIL, WE = VIH  
tACC  
9, 10, 11  
9, 10, 11  
9, 10, 11  
9, 10, 11  
ns  
-120  
-150  
-200  
--  
--  
--  
120  
150  
200  
Chip Enable Access Time OE = VIL, WE = VIH  
tCE  
tOE  
tOH  
ns  
ns  
ns  
-120  
-150  
-200  
--  
--  
--  
120  
150  
200  
Output Enable Access Time CE = VIL, WE = VIH  
-120  
-150  
-200  
0
0
0
75  
75  
125  
Output Hold to Address Change CE = OE = VIL, WE = VIH  
-120  
-150  
-200  
0
0
0
--  
--  
--  
Output Disable to High-Z2  
tDF  
9, 10, 11  
ns  
CE = VIL, WE = VIH  
-120  
-150  
-200  
0
0
0
50  
50  
60  
CE = OE = VIL, WE = VIH  
tDFR  
9, 10, 11  
9, 10, 11  
-120  
-150  
-200  
0
0
0
300  
350  
450  
3
RES to Output Delay CE = OE = VIL, WE = VIH  
tRR  
ns  
-120  
-150  
-200  
--  
--  
--  
400  
450  
650  
1. Test conditions: Input pulse levels - 0.4V to 2.4V; input rise and fall times < 20ns; output load - 1 TTL gate + 100pF (including  
scope and jig); reference levels for measuring timing - 0.8V/1.8V.  
2. tDF and tDFR are defined as the time at which the output becomes an open circuit and data is no longer driven.  
3. Guaranteed by design.  
09.17.13 Rev 18  
All data sheets are subject to change without notice  
4
©2013 Maxwell Technologies  
All rights reserved.  
79C0408  
4 Megabit (512k x 8-bit) EEPROM MCM  
T
ABLE 8. 79C0408 AC ELECTRICAL  
C
HARACTERISTICS FOR  
(VCC = 5V ±10%, TA = -55 TO +125°C)  
WRITE  
O
PERATIONS  
1
IN  
PARAMETER  
S
YMBOL  
SUBGROUPS  
M
AX  
UNIT  
M
Address Setup Time  
tAS  
9, 10, 11  
9, 10, 11  
9, 10, 11  
ns  
-120  
-150  
-200  
0
0
0
--  
--  
--  
Chip Enable to Write Setup Time (WE Controlled)  
tCS  
ns  
ns  
-120  
-150  
-200  
0
0
0
--  
--  
--  
Write Pulse Width  
CE Controlled  
-120  
-150  
-200  
tCW  
200  
250  
350  
--  
--  
--  
WE Controlled  
-120  
-150  
tWP  
200  
250  
350  
--  
--  
--  
-200  
Address Hold Time  
tAH  
tDS  
tDH  
tCH  
tWS  
tWH  
9, 10, 11  
9, 10, 11  
9, 10, 11  
9, 10, 11  
9, 10, 11  
9, 10, 11  
ns  
ns  
ns  
ns  
ns  
ns  
-120  
-150  
-200  
150  
150  
200  
--  
--  
--  
Data Setup Time  
-120  
-150  
-200  
75  
100  
150  
--  
--  
--  
Data Hold Time  
-120  
-150  
-200  
10  
10  
10  
--  
--  
--  
Chip Enable Hold Time (WE Controlled)  
-120  
-150  
-200  
0
0
0
--  
--  
--  
Write Enable to Write Setup Time (CE Controlled)  
-120  
-150  
-200  
0
0
0
--  
--  
--  
Write Enable Hold Time (CE Controlled)  
-120  
-150  
-200  
0
0
0
--  
--  
--  
09.17.13 Rev 18  
All data sheets are subject to change without notice  
5
©2013 Maxwell Technologies  
All rights reserved.  
79C0408  
4 Megabit (512k x 8-bit) EEPROM MCM  
T
ABLE 8. 79C0408 AC ELECTRICAL  
C
HARACTERISTICS FOR  
(VCC = 5V ±10%, TA = -55 TO +125°C)  
WRITE  
O
PERATIONS  
1
IN  
PARAMETER  
S
YMBOL  
SUBGROUPS  
M
AX  
UNIT  
M
Output Enable to Write Setup Time  
tOES  
9, 10, 11  
9, 10, 11  
9, 10, 11  
9, 10, 11  
9, 10, 11  
9, 10, 11  
9, 10, 11  
9, 10, 11  
9, 10, 11  
9, 10, 11  
ns  
-120  
-150  
-200  
0
0
0
--  
--  
--  
Output Enable Hold Time  
tOEH  
tWC  
tDL  
ns  
ms  
ns  
-120  
-150  
-200  
0
0
0
--  
--  
--  
Write Cycle Time2  
-120  
-150  
-200  
--  
--  
--  
10  
10  
10  
Data Latch Time  
-120  
-150  
-200  
250  
300  
400  
--  
--  
--  
Byte Load Window  
tBL  
µs  
µs  
ns  
-120  
-150  
-200  
100  
100  
200  
--  
--  
--  
Byte Load Cycle  
tBLC  
-120  
-150  
-200  
0.55  
0.55  
0.95  
30  
30  
30  
Time to Device Busy  
tDB  
-120  
-150  
-200  
100  
120  
170  
--  
--  
--  
Write Start Time3  
tDW  
ns  
-120  
-150  
-200  
150  
150  
250  
--  
--  
--  
RES to Write Setup Time  
tRP  
µs  
µs  
-120  
-150  
-200  
100  
100  
200  
--  
--  
--  
VCC to RES Setup Time4  
tRES  
-120  
-150  
-200  
1
1
3
--  
--  
--  
1. Use this device in a longer cycle than this value.  
2. tWC must be longer than this value unless polling techniques or RDY/BUSY are used. This device automatically completes the  
internal write operation within this value.  
09.17.13 Rev 18  
All data sheets are subject to change without notice  
6
©2013 Maxwell Technologies  
All rights reserved.  
79C0408  
4 Megabit (512k x 8-bit) EEPROM MCM  
3. Next read or write operation can be initiated after tDW if polling techniques or RDY/BUSY are used.  
4. Gauranteed by design.  
1, 2  
T
ABLE 9. 79C0408 MODE  
S
ELECTION  
I/O  
CE 3  
P
ARAMETER  
OE  
WE  
RES  
RDY/BUSY  
Read  
VIL  
VIH  
VIL  
VIL  
X
VIL  
X
VIH  
X
DOUT  
VH  
X
High-Z  
High-Z  
High-Z --> VOL  
High-Z  
--  
Standby  
Write  
High-Z  
VIH  
VIH  
X
VIL  
VIH  
VIH  
X
DIN  
VH  
VH  
X
Deselect  
Write Inhibit  
High-Z  
--  
--  
X
VIL  
VIL  
X
X
--  
Data Polling  
Program  
VIL  
X
VIH  
X
Data Out (I/O7)  
High-Z  
VH  
VIL  
VOL  
High-Z  
1. X = Don’t care.  
2. Refer to the recommended DC operating conditions.  
3. For CE1-4 only one CE can be used (“on”) at a time.  
FIGURE 1. READ  
TIMING  
WAVEFORM  
09.17.13 Rev 18  
All data sheets are subject to change without notice  
7
©2013 Maxwell Technologies  
All rights reserved.  
79C0408  
4 Megabit (512k x 8-bit) EEPROM MCM  
FIGURE 2. BYTE  
WRITE  
TIMING  
WAVEFORM(1) (WE CONTROLLED)  
09.17.13 Rev 18  
All data sheets are subject to change without notice  
8
©2013 Maxwell Technologies  
All rights reserved.  
79C0408  
4 Megabit (512k x 8-bit) EEPROM MCM  
FIGURE 3. BYTE  
WRITE  
TIMING  
WAVEFORM (2) (CE CONTROLLED)  
09.17.13 Rev 18  
All data sheets are subject to change without notice  
9
©2013 Maxwell Technologies  
All rights reserved.  
79C0408  
4 Megabit (512k x 8-bit) EEPROM MCM  
FIGURE 4. PAGE  
WRITE  
TIMING  
WAVEFORM(1) (WE CONTROLLED)  
09.17.13 Rev 18  
All data sheets are subject to change without notice 10  
©2013 Maxwell Technologies  
All rights reserved.  
79C0408  
4 Megabit (512k x 8-bit) EEPROM MCM  
FIGURE 5. PAGE  
WRITE  
TIMING  
WAVEFORM(2) (CE CONTROLLED)  
FIGURE 6.  
D
ATA  
P
OLLING  
TIMING  
WAVEFORM  
09.17.13 Rev 18  
All data sheets are subject to change without notice 11  
©2013 Maxwell Technologies  
All rights reserved.  
79C0408  
4 Megabit (512k x 8-bit) EEPROM MCM  
FIGURE 7. SOFTWARE  
DATA  
PROTECTION  
TIMING  
W
AVEFORM(1) (IN PROTECTION MODE  
)
FIGURE 8. SOFTWARE  
DATA  
P
ROTECTION  
TIMING  
W
AVEFORM(2) (IN NON  
-
PROTECTION MODE  
)
Toggle Bit Waveform  
EEPROM APPLICATION  
NOTES  
This application note describes the programming procedures for each EEPROM module (four in each MCM) and  
details of various techniques to preserve data protection.  
Automatic Page Write  
Page-mode write feature allows from 1 to 128 bytes of data to be written into the EEPROM in a single write cycle, and  
allows the undefined data within 128 bytes to be written corresponding to the undefined address (A0 to A6). Loading  
the first byte of data, the data load window opens 30 µs for the second byte. In the same manner each additional byte  
of data can be loaded within 30 µs. In case CE and WE are kept high for 100 µs after data input, the EEPROM enters  
erase and write mode automatically and only the input data are written into the EEPROM.  
09.17.13 Rev 18  
All data sheets are subject to change without notice 12  
©2013 Maxwell Technologies  
All rights reserved.  
79C0408  
4 Megabit (512k x 8-bit) EEPROM MCM  
WE CE Pin Operation  
During a write cycle, addresses are latched by the falling edge of WE or CE, and data is latched by the rising edge of  
WE or CE.  
Data Polling  
Data Polling function allows the status of the EEPROM to be determined. If the EEPROM is set to read mode during a  
write cycle, an inversion of the last byte of data to be loaded output is from I/O 7 to indicate that the EEPROM is per-  
forming a write operation.  
RDY/Busy Signal  
RDY/Busy signal also allows a comparison operation to determine the status of the EEPROM. The RDY/Busy signal  
has high impedance except in write cycle and is lowered to VOL after the first write signal. At the-end of a write cycle,  
the RDY/Busy signal changes state to high impedance.  
RES Signal  
When RES is LOW, the EEPROM cannot be read and programmed. Therefore, data can be protected by keeping  
RES low when VCC is switched. RES should be kept high during read and programming because it doesn’t provide a  
latch function.  
Data Protection  
To protect the data during operation and power on/off, the EEPROM has the internal functions described below.  
1. Data Protection against Noise of Control Pins (CE, OE, WE) during Operation.  
09.17.13 Rev 18  
All data sheets are subject to change without notice 13  
©2013 Maxwell Technologies  
All rights reserved.  
79C0408  
4 Megabit (512k x 8-bit) EEPROM MCM  
During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to programming mode by mis-  
take. To prevent this phenomenon, the EEPROM has a noise cancellation function that cuts noise if its width is 20 ns or less in  
programming mode. Be careful not to allow noise of a width of more than 20ns on the control pins.  
2. Data Protection at VCC on/off  
When VCC is turned on or off, noise on the control pins generated by external circuits, such as CPUs, may turn the EEPROM to  
programming mode by mistake. To prevent this unintentional programming, the EEPROM must be kept in unprogrammable  
state during VCC on/off by using a CPU reset signal to RES pin.  
RES should be kept at VSS level when VCC is turned on or off. The EEPROM breaks off programming operation when RES  
becomes low, programming operation doesn’t finish correctly in case that RES falls low during programming operation. RES  
should be kept high for 10 ms after the last data input.  
10mS min  
3. Software Data Protection  
The software data protection function is to prevent unintentional programming caused by noise generated by external circuits.  
In software data protection mode, 3 bytes of data must be input before write data as follows. These bytes can switch the non-  
protection mode to the protection mode.  
09.17.13 Rev 18  
All data sheets are subject to change without notice 14  
©2013 Maxwell Technologies  
All rights reserved.  
79C0408  
4 Megabit (512k x 8-bit) EEPROM MCM  
Software data protection mode can be canceled by inputting the following 6 bytes. Then, the EEPROM turns to the non-protec-  
tion mode and can write data normally. However, when the data is input in the canceling cycle, the data cannot be written.  
09.17.13 Rev 18  
All data sheets are subject to change without notice 15  
©2013 Maxwell Technologies  
All rights reserved.  
79C0408  
4 Megabit (512k x 8-bit) EEPROM MCM  
40 PIN  
RAD-PAK® PACKAGE  
D
IMENSIONS  
D
IMENSION  
SYMBOL  
M
IN  
NOM  
M
AX  
A
b
0.248  
0.013  
0.006  
--  
0.274  
0.015  
0.008  
0.850  
0.995  
--  
0.300  
0.022  
0.010  
0.860  
1.005  
1.025  
--  
c
D
E
0.985  
--  
E1  
E2  
E3  
e
0.890  
0.000  
0.895  
0.050  
--  
0.040 BSC  
0.390  
0.245  
0.038  
40  
L
0.380  
0.214  
0.005  
0.400  
0.270  
--  
Q
S1  
N
Note: All dimensions in inches  
Top and Bottom of package tied internally to ground  
09.17.13 Rev 18  
All data sheets are subject to change without notice 16  
©2013 Maxwell Technologies  
All rights reserved.  
79C0408  
4 Megabit (512k x 8-bit) EEPROM MCM  
40 LDFP  
40 PIN X-RAY-PAKTM FLAT  
P
ACKAGE  
D
IMENSIONS  
D
IMENSION  
OM  
SYMBOL  
M
IN  
N
M
AX  
A
b
0.248  
0.013  
0.006  
0.840  
0.985  
--  
0.274  
0.015  
0.008  
0.850  
0.995  
0.785  
0.105  
0.300  
0.022  
0.010  
0.860  
1.005  
--  
c
D
E
E2  
E3  
e
--  
--  
0.040 BSC  
0.350  
0.065  
0.035  
40  
L
0.340  
0.050  
--  
0.400  
0.075  
--  
Q
S1  
N
NOTE: All Dimensions in Inches  
Top and Bottom of package internally tied to ground  
09.17.13 Rev 18  
All data sheets are subject to change without notice 17  
©2013 Maxwell Technologies  
All rights reserved.  
79C0408  
4 Megabit (512k x 8-bit) EEPROM MCM  
40 PIN  
R
AD-TOLERANT  
F
LAT  
P
ACKAGE  
D
IMENSIONS  
D
IMENSION  
OM  
SYMBOL  
M
IN  
N
M
AX  
A
b
0.202  
0.013  
0.006  
--  
0.224  
0.015  
0.008  
0.850  
0.995  
--  
0.246  
0.022  
0.010  
0.860  
1.005  
1.025  
--  
c
D
E
0.985  
--  
E1  
E2  
E3  
e
0.890  
0.000  
0.895  
0.050  
--  
0.040 BSC  
0.390  
0.212  
0.038  
40  
L
0.380  
0.190  
0.005  
0.400  
0.236  
--  
Q
S1  
N
NOTE: All Dimensions in Inches  
Top and Bottom of package tied internally to ground  
09.17.13 Rev 18  
All data sheets are subject to change without notice 18  
©2013 Maxwell Technologies  
All rights reserved.  
79C0408  
4 Megabit (512k x 8-bit) EEPROM MCM  
Important Notice:  
These data sheets are created using the chip manufacturers published specifications. Maxwell Technologies verifies  
functionality by testing key parameters either by 100% testing, sample testing or characterization.  
The specifications presented within these data sheets represent the latest and most accurate information available to  
date. However, these specifications are subject to change without notice and Maxwell Technologies assumes no  
responsibility for the use of this information.  
Maxwell Technologies’ products are not authorized for use as critical components in life support devices or systems  
without express written approval from Maxwell Technologies.  
Any claim against Maxwell Technologies must be made within 90 days from the date of shipment from Maxwell Tech-  
nologies. Maxwell Technologies’ liability shall be limited to replacement of defective parts.  
09.17.13 Rev 18  
All data sheets are subject to change without notice 19  
©2013 Maxwell Technologies  
All rights reserved.  
79C0408  
4 Megabit (512k x 8-bit) EEPROM MCM  
Product Ordering Options  
Model Number  
Features  
Option Details  
79C0408  
XX  
F
X
-XX  
Access Time 12 = 120 ns  
15 = 150 ns  
20 = 200 ns  
Screening Flow Multi Chip Module (MCM1)  
K = Maxwell Self-Defined Class K  
H = Maxwell Self-Defined Class H  
I = Industrial(Testing at -55C, +25C, +125C)  
E = Engineering (Tested at +25C)  
F = Flat Pack  
Package  
Radiation Features2  
RP = Rad-Pak® Package  
RT = No Radiation Guarentee (Class E and I Only)  
RT1 = 10 krad (Read/Write)  
RT2 = 25 krad (Read/Write)  
RT4 = 40 krad (Read/Write)  
RT6 = 60 krad (Read/Write)  
RT4R = 40 krad (Read); 25 krad (Write)  
RT6R = 60 krad (Read); 25 krad (Write)  
XP = Xray Pack  
Base Product  
Nomenclature  
4 Megabit (512 x 8bit) EEPROM  
1) Products are manufactured and screened to Maxwell Technologies self-defined Class H and Class K flows.  
2) The device will meet the specified read mode TID level, at the die level, if it is not written to during irradiation. Writing to the  
device during irradiation will reduce the device’s TID tolerance to the specified write mode TID level. Writing to the device  
before irradiation does not alter the device’s read mode TID level.  
09.17.13 Rev 18  
All data sheets are subject to change without notice 20  
©2013 Maxwell Technologies  
All rights reserved.  

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