28LV010RT4FE-25 [MAXWELL]
3.3V 1 Megabit (128K x 8-Bit) EEPROM; 3.3V 1兆位（ 128K ×8位） EEPROM
| 型号： | 28LV010RT4FE-25 |
| 厂家： | 
MAXWELL TECHNOLOGIES |
| 描述： | 3.3V 1 Megabit (128K x 8-Bit) EEPROM |
| 文件： | 总20页 (文件大小：364K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
28LV010
3.3V 1 Megabit (128K x 8-Bit)
EEPROM
V
High Voltage
CC
I/O0
I/O7 RDY/Busy
Generator
V
SS
RES
OE
I/O Buffer and
Input Latch
CE
Control Logic Timing
WE
A0
A6
Y Decoder
X Decoder
Y Gating
Address
Buffer and
Latch
Memory Array
Data Latch
A7
A16
Logic Diagram
FEATURES:
DESCRIPTION:
• 3.3V low voltage operation 128K x 8 Bit EEPROM
• RAD-PAK® radiation-hardened against natural space
radiation
Maxwell Technologies’ 28LV010 high density, 3.3V, 1 Megabit
EEPROM microcircuit features a greater than 100 krad (Si)
total dose tolerance, depending upon space mission. The
28LV010 is capable of in-system electrical Byte and Page pro-
grammability. It has a 128-Byte Page Programming function to
make its erase and write operations faster. It also features
Data Polling and a Ready/Busy signal to indicate the comple-
tion of erase and programming operations. In the 28LV010,
hardware data protection is provided with the RES pin, in addi-
tion to noise protection on the WE signal and write inhibit on
power on and off. Meanwhile, software data protection is
implemented using the JEDEC-optional Standard algorithm.
The 28LV010 is designed for high reliability in the most
demanding space applications.
• Total dose hardness:
- > 100 krad (Si), depending upon space mission
• Excellent Single Event Effects:
- SEL > 84 MeV/mg/cm2
TH
- SEUTH > 37 Mev/mg/cm2 (read mode)
- SEU saturated cross section = 3E-6 cm2 (read mode)
- SEUTH = 11.4 Mev/mg/cm2 (write mode)
- SEU saturated cross section = 5E-3 cm2 (write mode)
with hard errors
• Package:
- 32 Pin RAD-PAK® flat pack
- 32 Pin RAD-PAK®DIP
- JEDEC-approved byte-wide pinout
• Address Access Time:
- 200, 250 ns maximum access times available
• High endurance:
- 10,000 erase/write (in Page Mode), 10-year data
retention
• Page write mode:
Maxwell Technologies' patented RAD-PAK® packaging technol-
ogy incorporates radiation shielding in the microcircuit pack-
age. It eliminates the need for box shielding while providing
the required radiation shielding for a lifetime in orbit or space
mission. In a GEO orbit, RAD-PAK provides greater than 100
krad (Si) radiation dose tolerance. This product is available
with screening up to Class S.
- 1 to 128 bytes
• Automatic programming
- 10 ms automatic page/byte write
• Low power dissipation
- 20 mW/MHz active current (typ.)
- 72 µW standby (maximum)
03.14.03 REV 6
1
All data sheets are subject to change without notice
(858) 503-3300 - Fax: (858) 503-3301- www.maxwell.com
©2001 Maxwell Technologies
All rights reserved.
28LV010
3.3V 1 Megabit (128K x 8-Bit) EEPROM
TABLE 1. 28LV010 PINOUT DESCRIPTION
PIN
SYMBOL
DESCRIPTION
12-5, 27, 26, 23, 25, A0-A16
4, 28, 3, 31, 2
Address
13-15, 17-21
I/O0 - I/O7
Input/Output
Output Enable
Chip Enable
Write Enable
Power Supply
Ground
24
22
29
32
16
1
OE
CE
WE
V
CC
V
SS
RDY/BUSY
RES
Ready/Busy
Reset
30
TABLE 2. 28LV010 ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Supply Voltage (Relative to Vss)
Input Voltage (Relative to Vss)
Package Weight
V
-0.6
7.0
7.0
V
V
CC
V
-0.5 1
IN
RP
RT
7.38
2.69
Grams
RD
10.97
2.17
Thermal Impedence
FJC
TOPR
TSTG
°C/W
°C
Operating Temperature Range
Storage Temperature Range
-55
-65
125
150
°C
1. V min = -3.0 V for pulse width < 50 ns.
IN
1
TABLE 3. DELTA LIMITS
PARAMETER
2
VARIATION
ICC1
±10%
±10%
±10%
±10%
ICC2
ICC3A
ICC3B
1. Parameters are measured and recorded as Deltas per
MIL-STD-883 for Class S Devices
2. Specified in Table 6
03.14.03 REV 6
All data sheets are subject to change without notice
2
©2001 Maxwell Technologies
All rights reserved.
28LV010
3.3V 1 Megabit (128K x 8-Bit) EEPROM
TABLE 4. 28LV010 RECOMMENDED OPERATING CONDITIONS
PARAMETER
SYMBOL
MIN
MAX
UNIT
Supply Voltage
Input Voltage
V
3.0
3.6
0.8
V
V
CC
V
-0.3 1
2.0 2
IL
V
V +0.3
IH
CC
RES_PIN
V
V -0.5
VCC +1
H
CC
Operating Temperature Range
TOPR
-55
+125
°C
1. V min = -1.0 V for pulse width < 50 ns.
IL
2. V min =2.2 Vfor VCC =3.6 V.
IH
TABLE 5. 28LV010 CAPACITANCE
(T = 25°C, F = 1MHZ)
A
PARAMETER
SYMBOL
MIN
MAX
UNIT
Input Capacitance: V =0V1
CIN
--
--
6
pF
pF
IN
Output Capacitance: VOUT =0V1
COUT
12
1. Guaranteed by design.
TABLE 6. 28LV010 DC ELECTRICAL CHARACTERISTICS
(VCC = 3.3V ± 0.3, TA =-55 TO +125°C UNLESS OTHERWISE SPECIFIED)
PARAMETER
TEST CONDITIONS
SYMBOL SUBGROUPS
MIN
MAX
UNIT
Input Leakage Current
V
CC =3.6V, V =3.6V
ILI
1, 2, 3
1, 2, 3
1, 2, 3
--
--
21
2
µA
µA
IN
OutputLeakage Current VCC =3.6V, VOUT = 3.6V/0.4V
ILO
Standby VCC Current CE =V
ICC1
ICC2
--
--
20
1
µA
mA
CC
CE =V
IH
Operating VCC Current IOUT = 0mA, Duty = 100%,
Cycle =1 µs @VCC =3.3V
ICC3
1, 2, 3
--
--
mA
6
IOUT = 0mA, Duty = 100%,
Cycle = 200 ns @ VCC =3.3V
15
Input Voltage
V
1, 2, 3
1, 2, 3
--
0.8
--
--
V
V
IL
V
2.02
IH
V
V -0.5
H
CC
Output Voltage3
I
I
I
OL =2.1 mA
OH =- 0.4 mA
OH =- 0.1 mA
V
--
0.4
--
--
OL
V
V
CC x0.8
OH
V
V - 0.3
OH
CC
1. ILI on RES = 100 uA max.
2. VIH min = 2.2V for VCC = 3.6V.
3. Rdy/Bsy is an open collector output.
03.14.03 REV 6
All data sheets are subject to change without notice
3
©2001 Maxwell Technologies
All rights reserved.
28LV010
3.3V 1 Megabit (128K x 8-Bit) EEPROM
1
TABLE 7. 28LV010 AC CHARACTERISTICS FOR READ OPERATION
(VCC = 3.3V ± 10%, TA =-55 TO +125 °C UNLESS OTHERWISE SPECIFIED)
PARAMETER
TEST CONDITIONS
SYMBOL
SUBGROUPS
MIN
MAX
UNIT
Address Access Time
tACC
9, 10, 11
ns
-200
-250
CE =OE =V , WE =V
--
--
200
250
IL
IH
Chip Enable Access Time
-200
-250
tCE
tOE
tOH
tDF
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
ns
ns
ns
ns
ns
ns
OE =V , WE =V
--
--
200
250
IL
IH
Output Enable Access Time
-200
-250
CE =V , WE =V
0
0
110
120
IL
IH
Output Hold to Address Change
-200
-250
CE =OE =V , WE =V
0
0
--
--
IL
IH
Output Disable to High-Z2
-200
-250
CE =V , WE =V
0
0
50
50
IL
IH
Output Disable to High-Z
-200
-250
tDFR
CE =OE=V , WE =V
0
0
300
350
IL
IH
RES to Output Delay 3
tRR
-200
-250
CE =OE =V WE =V
0
0
525
600
IL
IH
1. Test conditions: Input pulse levels - 0.4V to 2.4V; input rise and fall times < 20 ns; output load - 1 TTL gate + 100 pF (including
scope and jig); reference levels for measuring timing - 0.8V/1.8V.
2. tDF and tDFR is defined as the time at which the output becomes an open circuit and data is no longer driven.
3. Guaranteed by design.
03.14.03 REV 6
All data sheets are subject to change without notice
4
©2001 Maxwell Technologies
All rights reserved.
28LV010
3.3V 1 Megabit (128K x 8-Bit) EEPROM
TABLE 8. 28LV010 AC ELECTRICAL CHARACTERISTICS FOR ERASE AND WRITE OPERATIONS
(VCC = 3.3V ± 10%, TA =-55 TO +125 °C UNLESS OTHERWISE SPECIFIED)
PARAMETER
SYMBOL
SUBGROUPS
MIN
MAX
UNIT
Address Setup Time
tAS
9, 10, 11
ns
-200
-250
0
0
--
--
Chip Enable to Write Setup Time (WE controlled)
-200
-250
tCS
tCW
tWP
tAH
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
0
0
--
--
Write Pulse Width (CE controlled)
-200
-250
200
250
--
--
Write Pulse Width (WE controlled)
-200
-250
200
250
--
--
Address Hold Time
-200
-250
125
150
--
--
Data Setup Time
-200
-250
tDS
100
100
--
--
Data Hold Time
-200
-250
tDH
tCH
tWS
tWH
tOES
tOEH
tWC
10
10
--
--
Chip Enable Hold Time (WE controlled)
-200
-250
0
0
--
--
Write Enable to Write Setup Time (CE controlled)
-200
-250
0
0
--
--
Write Enable Hold Time (CE controlled)
-200
-250
0
0
--
--
Output Enable to Write Setup Tim
-200
-250
0
0
--
--
Output Enable Hold Time
-200
-250
0
0
--
--
Write Cycle Time 1,2
-200
-250
--
--
15
15
03.14.03 REV 6
All data sheets are subject to change without notice
5
©2001 Maxwell Technologies
All rights reserved.
28LV010
3.3V 1 Megabit (128K x 8-Bit) EEPROM
TABLE 8. 28LV010 AC ELECTRICAL CHARACTERISTICS FOR ERASE AND WRITE OPERATIONS
(VCC = 3.3V ± 10%, TA =-55 TO +125 °C UNLESS OTHERWISE SPECIFIED)
PARAMETER
SYMBOL
SUBGROUPS
MIN
MAX
UNIT
Byte Load Cycle
tBLC
9, 10, 11
µs
-200
-250
1
1
30
30
Data Latch Time2
-200
-250
tDL
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
ns
µs
ns
ns
µs
µs
700
750
-
-
Byte Load Window 2
-200
-250
tBL
100
100
--
--
Time to Device Busy
-200
-250
tDB
tDW
tRP
100
120
--
--
Write Start Time
-200
-250
150
250
--
--
RES to Write Setup Time2
-200
-250
100
100
--
--
V
CC to RES Setup Time 2
tRES
-200
-250
1
1
--
--
1. tWC must be longer than this value unless polling techniques or RDY/BSY are used. This device automatically completes the
internal write operation within this value.
2. Guaranteed by design.
1,2
TABLE 9. 28LV010 MODE SELECTION
MODE
CE
OE
WE
RES
RDY/BUSY
I/O
Read
V
V
V
V
High-Z
High-Z
DOUT
IL
IL
IH
H
Standby
Write
V
X
X
X
High-Z
IH
V
V
V
V
High-Z --> V
D
IL
IH
IL
H
OL
IN
Deselect
Write Inhibit
V
V
V
V
High-Z
High-Z
IL
IH
IH
H
X
X
X
V
X
X
--
--
--
--
IH
V
X
IL
Data Polling
Program
V
V
V
V
V
Data Out (I/O7)
High-Z
IL
IL
IH
H
OL
X
X
X
V
High-Z
IL
1. X = Don’t care.
2. Refer to the recommended DC operating conditions.
03.14.03 REV 6
All data sheets are subject to change without notice
6
©2001 Maxwell Technologies
All rights reserved.
28LV010
3.3V 1 Megabit (128K x 8-Bit) EEPROM
FIGURE 1. READ TIMING WAVEFORM
03.14.03 REV 6
All data sheets are subject to change without notice
7
©2001 Maxwell Technologies
All rights reserved.
28LV010
3.3V 1 Megabit (128K x 8-Bit) EEPROM
FIGURE 2. BYTE WRITE TIMING WAVEFORM(1) (WE CONTROLLED)
03.14.03 REV 6
All data sheets are subject to change without notice
8
©2001 Maxwell Technologies
All rights reserved.
28LV010
3.3V 1 Megabit (128K x 8-Bit) EEPROM
FIGURE 3. BYTE WRITE TIMING WAVEFORM (2) (CE CONTROLLED)
03.14.03 REV 6
All data sheets are subject to change without notice
9
©2001 Maxwell Technologies
All rights reserved.
28LV010
3.3V 1 Megabit (128K x 8-Bit) EEPROM
FIGURE 4. PAGE WRITE TIMING WAVEFORM(1) (WE CONTROLLED)
03.14.03 REV 6
All data sheets are subject to change without notice 10
©2001 Maxwell Technologies
All rights reserved.
28LV010
3.3V 1 Megabit (128K x 8-Bit) EEPROM
FIGURE 5. PAGE WRITE TIMING WAVEFORM(2) (CE CONTROLLED)
FIGURE 6. SOFTWARE DATA PROTECTION TIMING WAVEFORM(1) (IN PROTECTION MODE)
03.14.03 REV 6
All data sheets are subject to change without notice 11
©2001 Maxwell Technologies
All rights reserved.
28LV010
3.3V 1 Megabit (128K x 8-Bit) EEPROM
FIGURE 7. SOFTWARE DATA PROTECTION TIMING WAVEFORM(2) (IN NON-PROTECTION MODE)
FIGURE 8. DATA POLLING TIMING WAVEFORM
03.14.03 REV 6
All data sheets are subject to change without notice 12
©2001 Maxwell Technologies
All rights reserved.
28LV010
3.3V 1 Megabit (128K x 8-Bit) EEPROM
FIGURE 9. TOGGLE BIT WAVEFORM
EEPROM APPLICATION NOTES
This application note describes the programming procedures for the EEPROM modules and with details of various
techniques to preserve data protection.
Automatic Page Write
Page-mode write feature allows 1 to 128 bytes of data to be written into the EEPROM in a single write cycle, and
allows the undefined data within 128 bytes to be written corresponding to the undefined address (A0 to A6). Loading
the first byte of data, the data load window opens 30 µs for the second byte. In the same manner each additional byte
of data can be loaded within 30 µs. In case CE and WE are kept high for 100(s after data input, EEPROM enters
erase and write mode automatically and only the input data are written into the EEPROM.
WE CE Pin Operation
During a write cycle, addresses are latched by the falling edge of WE or CE, and data is latched by the rising edge of
WE or CE.
Data Polling
Data Polling function allows the status of the EEPROM to be determined. If EEPROM is set to read mode during a
write cycle, an inversion of the last byte of data to be loaded outputs from I/O 7 to indicate that the EEPROM is per-
forming a write operation.
RDY/Busy Signal
RDY/Busy signal also allows a comparison operation to determine the status of the EEPROM. The RDY/Busy signal
has high impedance except in write cycle and is lowered to V after the first write signal. At the-end of a write cycle,
OL
the RDY/Busy signal changes state to high impedance.
03.14.03 REV 6
All data sheets are subject to change without notice 13
©2001 Maxwell Technologies
All rights reserved.
28LV010
3.3V 1 Megabit (128K x 8-Bit) EEPROM
RES Signal
When RES is LOW, the EEPROM cannot be read and programmed. Therefore, data can be protected by keeping
RES low when V is switched. RES should be high during read and programming because it doesn’t provide a latch
CC
function.
Data Protection
To protect the data during operation and power on/off, the EEPROM has the internal functions described below.
1. Data Protection against Noise of Control Pins (CE, OE, WE) during Operation.
During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to programming mode by mis-
take. To prevent this phenomenon, the EEPROM has a noise cancellation function that cuts noise if its width is 20 ns or less in
programming mode. Be careful not to allow noise of a width of more than 20 ns on the control pins.
2. Data Protection at VCC on/off
03.14.03 REV 6
All data sheets are subject to change without notice 14
©2001 Maxwell Technologies
All rights reserved.
28LV010
3.3V 1 Megabit (128K x 8-Bit) EEPROM
When V is turned on or off, noise on the control pins generated by external circuits, such as CPUs, may turn the EEPROM to
CC
programming mode by mistake. To prevent this unintentional programming, the EEPROM must be kept in unprogrammable
state during VCC on/off by using a CPU reset signal to RES pin.
RES should be kept at V level when VCC is turned on or off. The EEPROM breaks off programming operation when RES
SS
become low, programming operation doesn’t finish correctly in case that RES falls low during programming operation. RES
should be kept high for 10 ms after the last data input.
15ms min
3. Software Data Protection
The software data protection function is to prevent unintentional programming caused by noise generated by external circuits.
In software data protection mode, 3 bytes of data must be input before write data as follows. These bytes can switch the non-
protection mode to the protection mode.
Software data protection mode can be canceled by inputting the following 6 bytes. Then, the EEPROM turns to the non-protec-
tion mode and can write data normally. However, when the data is input in the canceling cycle, the data cannot be written.
03.14.03 REV 6
All data sheets are subject to change without notice 15
©2001 Maxwell Technologies
All rights reserved.
28LV010
3.3V 1 Megabit (128K x 8-Bit) EEPROM
32-PIN RAD-PAK®FLAT PACKAGE
SYMBOL
DIMENSION
MIN
NOM
MAX
A
b
0.121
0.015
0.004
--
0.134
0.017
0.005
0.820
0.480
--
0.147
0.022
0.009
0.830
0.488
0.498
--
c
D
E
0.472
--
E1
E2
E3
e
0.304
0.030
0.310
0.085
0.050BSC
0.365
0.035
0.027
32
--
L
0.355
0.020
0.005
0.375
0.045
--
Q
S1
N
Note: All dimensions in inches
03.14.03 REV 6
All data sheets are subject to change without notice 16
©2001 Maxwell Technologies
All rights reserved.
28LV010
3.3V 1 Megabit (128K x 8-Bit) EEPROM
32 PIN RAD-TOLERANT FLAT PACK
SYMBOL
DIMENSION
MIN
NOM
MAX
A
b
0.095
0.015
0.004
--
0.109
0.017
0.005
0.820
0.480
--
0.125
0.022
0.009
0.830
0.488
0.498
--
c
D
E
0.472
--
E1
E2
E3
e
0.350
0.030
0.365
0.085
0.050BSC
0.365
0.035
0.027
32
--
L
0.355
0.020
0.005
0.375
0.045
--
Q
S1
N
Note: All Dimentions in Inches
03.14.03 REV 6
All data sheets are subject to change without notice 17
©2001 Maxwell Technologies
All rights reserved.
28LV010
3.3V 1 Megabit (128K x 8-Bit) EEPROM
1
32 PIN DUAL IN-LINE PACKAGE
DIMENSION
SYMBOL
MIN
NOM
MAX
A
b
--
0.152
0.018
0.225
0.026
0.065
0.018
1.680
0.620
0.014
0.045
0.008
--
b2
c
0.050
0.010
D
1.600
E
0.510
0.590
eA
eA/2
e
0.600 BSC
0.300 BSC
0.100 BSC
0.145
L
0.135
0.015
0.005
0.005
0.155
0.070
--
Q
0.037
S1
S2
N
0.025
--
--
32
1. Standard Product Screening Flow MIL-STD-883, Method 2001, Constant Acceleration: For this package type
Constant Acceleration is 3000g’s
Note: All dimensions in inches
03.14.03 REV 6
All data sheets are subject to change without notice 18
©2001 Maxwell Technologies
All rights reserved.
28LV010
3.3V 1 Megabit (128K x 8-Bit) EEPROM
Important Notice:
These data sheets are created using the chip manufacturers published specifications. Maxwell Technologies verifies
functionality by testing key parameters either by 100% testing, sample testing or characterization.
The specifications presented within these data sheets represent the latest and most accurate information available to
date. However, these specifications are subject to change without notice and Maxwell Technologies assumes no
responsibility for the use of this information.
Maxwell Technologies’ products are not authorized for use as critical components in life support devices or systems
without express written approval from Maxwell Technologies.
Any claim against Maxwell Technologies must be made within 90 days from the date of shipment from Maxwell Tech-
nologies. Maxwell Technologies’ liability shall be limited to replacement of defective parts.
03.14.03 REV 6
All data sheets are subject to change without notice 19
©2001 Maxwell Technologies
All rights reserved.
28LV010
3.3V 1 Megabit (128K x 8-Bit) EEPROM
Product Ordering Options
Model Number
28LV010
XX
X
X
-XX
Option Details
20 = 200 ns
Feature
Access Time
25 = 250 ns
Monolithic
Screening Flow
S = Maxwell Class S
B = Maxwell Class B
I = Industrial (testing @ -55°C,
+25°C, +125°C)
E = Engineering (testing @ +25°C)
D = Dual In-line Package (DIP)1
F =Flat Pack
Package
RP = RAD-PAK® package
RT1 = Guaranteed to 10 krad at
die level
Radiation Feature
RT2 = Guaranteed to 25 krad at
die level
RT4 = Guaranteed to 40 krad at
die level
3.3V 1 Megabit (128K x 8-Bit)
EEPROM
Base Product
Nomenclature
1.) Standard Product Screening Flow MIL-STD-883, Method 2001, Constant Acceleration :For DIP package type-
Constant Acceleration is 3000g’s.
03.14.03 REV 6
All data sheets are subject to change without notice 20
©2001 Maxwell Technologies
All rights reserved.
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