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28C256TRT4FI-15 [MAXWELL]

256K EEPROM (32K x 8-Bit) EEPROM; 256K EEPROM （ 32K ×8位） EEPROM
28C256TRT4FI-15
型号： 28C256TRT4FI-15
厂家： MAXWELL TECHNOLOGIES    MAXWELL TECHNOLOGIES
描述：

256K EEPROM (32K x 8-Bit) EEPROM
256K EEPROM （ 32K ×8位） EEPROM

内存集成电路 可编程只读存储器 电动程控只读存储器 电可擦编程只读存储器
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28C256T  
256K EEPROM (32K x 8-Bit)  
EEPROM  
DATA INPUTS/ OUTPUTS  
I/ O0 - I/ O7  
V
CC  
GND  
OE  
WE  
CE  
DATA LATCH  
OE, CE, a nd WE  
LOGIC  
INPUT/ OUTPUT  
BUFFERS  
Y DECODER  
Y-GATING  
CELL MATRIX  
IDENTIFICATION  
ADDRESS  
INPUTS  
X DECODER  
Logic Diagram  
FEATURES:  
DESCRIPTION:  
• RAD-PAK® radiation-hardened against natural space radia-  
tion  
• Total dose hardness:  
Maxwell Technologies’ 28C256T high density 256k-bit  
EEPROM microcircuit features a greater than 100 krad (Si)  
total dose tolerance, depending upon space mission. The  
28C256T is capable of in-system electrical byte and page pro-  
grammability. It has a 64-Byte page programming function to  
make its erase and write operations faster. It also features  
data polling to indicate the completion of erase and program-  
ming operations.  
- > 100 Krad (Si), dependent upon space mission  
• Excellent Single Event Effects:  
- SEL LET: > 120 MeV/mg/cm2  
TH  
- SEUTH LET (read mode): > 90 MeV/mg/cm2  
- SEUTH LET (write mode): > 18 MeV/mg/cm2  
• Package:  
- 28 pin RAD-PAK® flat pack  
- 28 pin RAD-PAK® DIP  
- JEDEC approved byte wide pinout  
• High Speed:  
- 120, 150 ns maximum access times available  
• High endurance:  
Maxwell Technologies' patented RAD-PAK® packaging technol-  
ogy incorporates radiation shielding in the microcircuit pack-  
age. It eliminates the need for box shielding while providing  
the required radiation shielding for a lifetime in orbit or space  
mission. In a GEO orbit, RAD-PAK provides greater than 100  
krad (Si) radiation dose tolerance. This product is available  
with screening up to Class S.  
- 10,000 erase/write (in Page Mode), 10-year data  
retention  
• Page Write Mode:  
- 1 to 64 bytes  
• Low power dissipation:  
- 15 mA active current (cycle = 1 µs)  
- 20 µA standby current (CE = V )  
CC  
1
02.18.02 Rev 5  
All data sheets are subject to change without notice  
(858) 503-3300 - Fax: (858) 503-3301- www.maxwell.com  
©2001 Maxwell Technologies  
All rights reserved.  
28C256T  
256K EEPROM (32K x 8-Bit) EEPROM  
TABLE 1. 28C256T PINOUT DESCRIPTION  
PIN  
SYMBOL  
DESCRIPTION  
*10-3, 25, 24,  
A0-A14  
Address  
21, 23, 2, 26, 1  
11-13, 15-19  
I/O0-I/O7  
OE  
Input/Output  
Output Enable  
Chip Enable  
Write Enable  
Power Supply  
Ground  
22  
20  
27  
28  
14  
CE  
WE  
V
CC  
V
SS  
*Refer to diagram on Page 1 for pin relationship.  
TABLE 2. 28C256T ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
MIN  
MAX  
UNITS  
Supply Voltage (Relative to V )  
V
-0.6  
-0.51  
-55  
7.0  
7.0  
V
V
°C  
°C  
SS  
CC  
Input Voltage (Relative to V )  
V
SS  
IN  
Operating Temperature Range2  
Storage Temperature Range  
TOPR  
TSTG  
125  
150  
-65  
1. V = -3.0 V for pulse width > 50 ns.  
IN  
2. Including electrical characteristics and data retention.  
TABLE 3. 28C256T DELTA LIMITS  
PARAMETER  
VARIATION  
ICC1  
±10%  
±10%  
±10%  
±10%  
ICC2  
ICC3A  
ICC3B  
02.18.02 Rev5  
All data sheets are subject to change without notice  
2
©2001 Maxwell Technologies  
All rights reserved.  
28C256T  
256K EEPROM (32K x 8-Bit) EEPROM  
TABLE 4. 28C256T RECOMMENDED OPERATING CONDITIONS  
PARAMETER  
SUBGROUPS  
SYMBOL  
MIN  
MAX  
UNITS  
Supply Voltage  
Input Voltage  
1
1
1
1
1
1
1
V
4.5  
5.5  
0.8  
VCC +0.3  
VCC +1  
V
CC  
V
-0.31  
2.2  
CC -0.5  
V
V
V
IL  
V
IH  
V
V
H
Thermal Impedance — Flat Package  
Thermal Impedance — DIP Package  
Operating Temperature Range  
ΘJC  
ΘJC  
TOPR  
--  
--  
0.87  
0.86  
125  
°C/W  
°C/W  
°C  
-55  
1. V min= -1.0V for pulse width < 50 ns.  
IL  
TABLE 5. 28C256T CAPACITANCE1  
(T = 25 °C, f = 1 MHz)  
A
PARAMETER  
SYMBOL  
MIN  
MAX  
UNITS  
Input Capacitance: V = 0V 1  
CIN  
--  
--  
6
pF  
pF  
IN  
Output Capacitance: VOUT = 0V 1  
COUT  
12  
1. Guaranteed by design.  
TABLE 6. 28C256T DC ELECTRICAL CHARACTERISTICS  
(VCC = 5 V ± 10%, TA = -55 TO +125 °C UNLESS OTHERWISE SPECIFIED)  
PARAMETER  
CONDITIONS  
SUBGROUPS  
SYMBOL  
MIN  
MAX  
UNITS  
Input Leakage Current  
Output Leakage Current  
Standby VCC Current  
V
CC = 5.5 V, V = 5.5 V  
1, 2, 3  
1, 2, 3  
1, 2, 3  
1, 2, 3  
1, 2, 3  
ILI  
--  
--  
--  
--  
--  
2
2
uA  
uA  
uA  
mA  
mA  
IN  
VCC = 5.5 V,  
VOUT = 5.5 V/0.4 V  
ILO  
CE = V  
ICC1  
ICC2  
ICC3  
20  
1
CC  
CE = V  
IH  
Operating VCC Current  
IOUT = 0 mA Duty = 100%  
CC = 5.5 V Cycle = 1 us  
15  
V
IOUT = 0mA Duty = 100%  
CC = 5.5 V Cycle = 150 ns  
--  
50  
V
Input Low Voltage  
Input High Voltage  
1, 2, 3  
1, 2, 3  
1, 2, 3  
1, 2, 3  
1, 2, 3  
V
--  
0.8  
--  
V
V
V
V
V
IL  
V
2.2  
IH  
V
V
CC -0.5  
--  
H
Output Low Voltage  
Output High Voltage  
I
LO = 2.1 mA  
V
--  
0.4  
--  
OL  
IOH = -400 uA  
V
2.4  
OH  
02.18.02 Rev5  
All data sheets are subject to change without notice  
3
©2001 Maxwell Technologies  
All rights reserved.  
28C256T  
256K EEPROM (32K x 8-Bit) EEPROM  
1
TABLE 7. 28C256T AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION  
(VCC = 5V ±10%, TA = -55 TO 125 °C UNLESS OTHERWISE SPECIFIED)  
PARAMETER  
SUBGROUPS  
SYMBOL  
MIN  
MAX  
UNITS  
Address Access Time CE = OE = V , WE = V  
9, 10, 11  
tACC  
ns  
IL  
IH  
-120  
-150  
--  
--  
120  
150  
CE to Output Delay OE = V , WE = V  
-120  
-150  
9, 10, 11  
9, 10, 11  
9, 10, 11  
9, 10, 11  
tCE  
tOE  
tOH  
tDF  
ns  
ns  
ns  
ns  
IL  
IH  
--  
--  
120  
150  
OE to Output Delay CE = V , WE = V  
IL  
IH  
-120  
-150  
0
0
75  
75  
Output Hold from Address CE = OE = V , WE = V  
-120  
-150  
IL  
IH  
0
0
--  
--  
2
OE (CE) High to Output Float CE = V , WE = V  
IL  
IH  
-120  
-150  
0
0
50  
50  
1. Test conditions: Input pulse levels - 0V to 3V; input rise and fall times < 20 ns; output load - 1 TTL gate + 100 pF (including scope and jig); ref-  
erence levels for measuring timing - 0.8V/1.8V.  
2. tDF and tDFR are defined as the time at which the output becomes an open circuit and data is no longer driven.  
TABLE 8. 28C256T AC ELECTRICAL CHARACTERISTICS FOR PAGE/BYTE ERASE AND WRITE OPERATIONS  
(VCC = 5V ±10%, TA = -55 TO 125 °C UNLESS OTHERWISE SPECIFIED)  
1
PARAMETER  
SUBGROUPS  
SYMBOL  
TYP  
MAX  
UNITS  
MIN  
Address Setup Time  
tAS  
ns  
-120  
-150  
0
0
--  
--  
--  
--  
9, 10, 11  
9, 10, 11  
2
CE to Write Setup Time  
-120  
-150  
tCS  
ns  
ns  
ns  
0
0
--  
--  
--  
--  
9, 10, 11  
9, 10, 11  
3
WE to Write Setup Time  
-120  
-150  
tWS  
0
0
--  
--  
--  
--  
9, 10, 11  
9, 10, 11  
9, 10, 11  
3
WE Hold Time  
-120  
-150  
tWH  
0
0
--  
--  
02.18.02 Rev5  
All data sheets are subject to change without notice  
4
©2001 Maxwell Technologies  
All rights reserved.  
28C256T  
256K EEPROM (32K x 8-Bit) EEPROM  
TABLE 8. 28C256T AC ELECTRICAL CHARACTERISTICS FOR PAGE/BYTE ERASE AND WRITE OPERATIONS  
(VCC = 5V ±10%, TA = -55 TO 125 °C UNLESS OTHERWISE SPECIFIED)  
1
PARAMETER  
SUBGROUPS  
SYMBOL  
TYP  
MAX  
UNITS  
MIN  
2
WE Pulse Width  
-120  
-150  
CE Pulse Width  
-120  
-150  
9, 10, 11  
tWP  
ns  
200  
250  
--  
--  
--  
--  
3
tCW  
200  
250  
--  
--  
--  
--  
Address Hold Time  
-120  
-150  
9, 10, 11  
9, 10, 11  
9, 10, 11  
9, 10, 11  
9, 10, 11  
9, 10, 11  
9, 10, 11  
9, 10, 11  
9, 10, 11  
9, 10, 11  
9, 10, 11  
tAH  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ms  
us  
us  
ns  
150  
150  
--  
--  
--  
--  
Data Setup Time  
-120  
-150  
tDS  
75  
100  
--  
--  
--  
--  
Data Hold Time  
-120  
-150  
tDH  
tCH  
tOES  
tOEH  
tDL  
10  
10  
--  
--  
--  
--  
Chip Enable Hold Time2  
-120  
-150  
0
0
--  
--  
--  
--  
Output Enable to Write Setup Time  
-120  
-150  
0
0
--  
--  
--  
--  
Output Enable Hold Time  
-120  
-150  
0
0
--  
--  
--  
--  
Data Latch Time4  
-120  
-150  
--  
--  
230  
280  
--  
--  
Write Cycle Time  
-120  
-150  
tWC  
--  
--  
--  
--  
10  
10  
4
Byte Load Window  
tBL  
-120  
-150  
--  
--  
100  
100  
--  
--  
Byte Load Cycle4  
-120  
-150  
tBLC  
0.55  
0.55  
--  
--  
30  
30  
Write Start Time  
-120  
-150  
tDW  
150  
150  
--  
--  
--  
--  
1. Use this device in a longer cycle than this value.  
2. WE controlled operation.  
3. CE controlled operation.  
4. Not tested.  
02.18.02 Rev5  
All data sheets are subject to change without notice  
5
©2001 Maxwell Technologies  
All rights reserved.  
28C256T  
256K EEPROM (32K x 8-Bit) EEPROM  
1
TABLE 9. 28C256T MODE SELECTION  
MODE  
CE  
OE  
WE  
I/O  
Write  
V
V
V
IH  
DOUT  
IL  
IL  
Standby  
Write  
V
X
X
HIGH-Z  
H
V
V
V
D
IL  
IH  
IL  
IN  
Deselect  
Write Inhibit  
V
V
V
IH  
HIGH-Z  
IL  
IH  
X
X
X
V
--  
--  
IH  
V
X
IL  
Data\ Polling  
V
V
V
IH  
DATA-OUT  
(I/O7)  
IL  
IL  
1. X = Does not matter.  
02.18.02 Rev5  
All data sheets are subject to change without notice  
6
©2001 Maxwell Technologies  
All rights reserved.  
28C256T  
256K EEPROM (32K x 8-Bit) EEPROM  
FIGURE 1. READ TIMING WAVEFORM  
FIGURE 2. BYTE WRITE TIMING WAVEFORM (1) (WE CONTROLLED)  
02.18.02 Rev5  
All data sheets are subject to change without notice  
7
©2001 Maxwell Technologies  
All rights reserved.  
28C256T  
256K EEPROM (32K x 8-Bit) EEPROM  
FIGURE 3. BYTE WRITE TIMING WAVEFORM (2) (CE CONTROLLED)  
FIGURE 4. PAGE WRITE TIMING WAVEFORM (1) (WE CONTROLLED)  
02.18.02 Rev5  
All data sheets are subject to change without notice  
8
©2001 Maxwell Technologies  
All rights reserved.  
28C256T  
256K EEPROM (32K x 8-Bit) EEPROM  
FIGURE 5. PAGE WRITE TIMING WAVEFORM (2) (CE CONTROLLED)  
FIGURE 6. DATA POLLING TIMING WAVEFORM  
02.18.02 Rev5  
All data sheets are subject to change without notice  
9
©2001 Maxwell Technologies  
All rights reserved.  
28C256T  
256K EEPROM (32K x 8-Bit) EEPROM  
EEPROM APPLICATION NOTES  
This application note describes the programming procedures for the EEPROM modules and the details of various  
techniques to preserve data protection.  
Automatic Page Write  
Page-mode write feature allows 1 to 64 bytes of data to be written into the EEPROM in a single write cycle, and allows  
the undefined data within 64 bytes to be written corresponding to the undefined address (A0 to A5). Loading the first  
byte of data, the data load window opens 30 µs for the second byte. In the same manner each additional byte of data  
can be loaded within 30 µs. In case CE and WE are kept high for 100(s after data input, EEPROM enters erase and  
write mode automatically and only the input data are written into the EEPROM.  
WE CE Pin Operation  
During a write cycle, addresses are latched by the falling edge of WE or CE, and data is latched by the rising edge of  
WE or CE.  
Data Polling  
Data Polling function allows the status of the EEPROM to be determined. If EEPROM is set to read mode during a  
write cycle, an inversion of the last byte of data to be loaded outputs from I/O 7 to indicate that the EEPROM is per-  
forming a write operation.  
Data Protection  
To protect the data during operation and power on/off, the EEPROM has the internal functions described below.  
1. Data Protection against Noise of Control Pins (CE, OE, WE) during Operation.  
During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to programming mode by mis-  
take. To prevent this phenomenon, the EEPROM has a noise cancellation function that cuts noise if its width is 20ns or less in  
programming mode. Be careful not to allow noise of a width of more than 20ns on the control pins.  
02.18.02 Rev5  
All data sheets are subject to change without notice 10  
©2001 Maxwell Technologies  
All rights reserved.  
28C256T  
256K EEPROM (32K x 8-Bit) EEPROM  
28 PIN RAD-PAK® FLAT PACKAGE  
DIMENSION  
SYMBOL  
MIN  
NOM  
MAX  
A
b
0.165  
0.015  
0.003  
--  
0.177  
0.017  
0.005  
0.720  
0.410  
--  
0.189  
0.022  
0.009  
0.740  
0.420  
0.440  
--  
c
D
E
0.380  
--  
E1  
E2  
E3  
e
0.180  
0.030  
0.240  
0.085  
0.050 BSC  
0.400  
0.050  
0.027  
28  
--  
L
0.390  
0.040  
0.005  
0.410  
0.053  
--  
Q
S1  
N
F28-03  
Note: All dimensions in inches.  
02.18.02 Rev5  
All data sheets are subject to change without notice 11  
©2001 Maxwell Technologies  
All rights reserved.  
28C256T  
256K EEPROM (32K x 8-Bit) EEPROM  
28 PIN RAD-PAK® DUAL IN LINE PACKAGE  
DIMENSION  
SYMBOL  
MIN  
NOM  
MAX  
A
b
--  
0.177  
0.018  
0.225  
0.026  
0.065  
0.018  
1.485  
0.620  
0.014  
0.045  
0.008  
--  
b2  
c
0.050  
0.010  
D
1.400  
E
0.510  
0.595  
eA  
eA/2  
e
0.600 BSC  
0.300 BSC  
0.100 BSC  
0.150  
L
0.140  
0.015  
0.005  
0.005  
0.160  
0.060  
--  
Q
0.040  
S1  
S2  
N
0.025  
--  
--  
28  
D28-03  
Note: All dimensions in inches.  
02.18.02 Rev5  
All data sheets are subject to change without notice 12  
©2001 Maxwell Technologies  
All rights reserved.  
28C256T  
256K EEPROM (32K x 8-Bit) EEPROM  
Important Notice:  
These data sheets are created using the chip manufacturer’s published specifications. Maxwell Technologies verifies  
functionality by testing key parameters either by 100% testing, sample testing or characterization.  
The specifications presented within these data sheets represent the latest and most accurate information available to  
date. However, these specifications are subject to change without notice and Maxwell Technologies assumes no  
responsibility for the use of this information.  
Maxwell Technologies’ products are not authorized for use as critical components in life support devices or systems  
without express written approval from Maxwell Technologies.  
Any claim against Maxwell Technologies must be made within 90 days from the date of shipment from Maxwell Tech-  
nologies. Maxwell Technologies’ liability shall be limited to replacement of defective parts.  
02.18.02 Rev5  
All data sheets are subject to change without notice 13  
©2001 Maxwell Technologies  
All rights reserved.  
28C256T  
256K EEPROM (32K x 8-Bit) EEPROM  
Product Ordering Options  
Model Number  
28C256T  
XX  
X
X
-XX  
Option Details  
12 = 120 ns  
Feature  
Access Time  
15 = 150 ns  
Monolithic  
Screening Flow  
S = Maxwell Class S  
B = Maxwell Class B  
E = Engineering (testing @ +25°C)  
I = Industrial (testing @ -55°C,  
+25°C, +125°C)  
D = Dual In-line Package (DIP)  
F = Flat Pack  
Package  
RP = RAD-PAK® package  
RT1 = Guaranteed to 10 krad at  
die level  
Radiation Feature  
RT2 = Guaranteed to 25 krad at  
die level  
RT4 = Guaranteed to 40 krad at  
die level  
256K EEPROM (32K x 8-Bit)  
EEPROM  
Base Product  
Nomenclature  
02.18.02 Rev5  
All data sheets are subject to change without notice 14  
©2001 Maxwell Technologies  
All rights reserved.  

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