28C010TRT4DE-20 [MAXWELL]
1 Megabit (128K x 8-Bit) EEPROM; 1兆位（ 128K ×8位） EEPROM
| 型号： | 28C010TRT4DE-20 |
| 厂家： | 
MAXWELL TECHNOLOGIES |
| 描述： | 1 Megabit (128K x 8-Bit) EEPROM |
| 文件： | 总20页 (文件大小：360K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
28C010T
1 Megabit (128K x 8-Bit) EEPROM
V
High Voltage
CC
I/O0
I/O7 RDY/Busy
Generator
V
SS
RES
OE
I/O Buffer and
Input Latch
CE
Control Logic Timing
WE
A0
A6
Y Decoder
X Decoder
Y Gating
Address
Buffer and
Latch
Memory Array
Data Latch
A7
A16
Logic Diagram
FEATURES:
DESCRIPTION:
• 128k x 8-bit EEPROM
• RAD-PAK® radiation-hardened against natural space radia-
tion
Maxwell Technologies’ 28C010T high-density 1 Megabit
(128K x 8-Bit) EEPROM microcircuit features a greater than
100 krad (Si) total dose tolerance, depending upon space mis-
sion. The 28C010T is capable of in-system electrical byte and
page programmability. It has a 128-byte page programming
function to make its erase and write operations faster. It also
features data polling and a Ready/Busy signal to indicate the
completion of erase and programming operations. In the
28C010T, hardware data protection is provided with the RES
pin, in addition to noise protection on the WE signal and write
inhibit on power on and off. Software data protection is imple-
mented using the JEDEC optional standard algorithm.
• Total dose hardness:
- > 100 krad (Si), depending upon space mission
• Excellent Single event effects
- SEL > 120 MeV/mg/cm2
TH
- SEU > 90 MeV/mg/cm2 read mode
- SEU = 18 MeV/mg/cm2 write mode
• Package:
- 32-pin RAD-PAK® flat pack/DIP package
- JEDEC-approved byte-wide pinout
• High speed:
- 120, 150, and 200 ns maximum access times available
• High endurance:
- 10,000 erase/write (in Page Mode),
- 10 year data retention
• Page write mode:
Maxwell Technologies' patented RAD-PAK® packaging technol-
ogy incorporates radiation shielding in the microcircuit pack-
age. It eliminates the need for box shielding while providing
the required radiation shielding for a lifetime in orbit or space
mission. In a GEO orbit, RAD-PAK® provides greater than 100
krad(Si) radiation dose tolerance. This product is available
with screening up to Class S.
- 1 to 128 bytes
• Low power dissipation
- 20 mW/MHz active (typical)
- 110 µW standby (maximum)
• Standard JEDEC package width
06.03.03 REV 14
1
All data sheets are subject to change without notice
(858) 503-3300- Fax: (858) 503-3301 - www.maxwell.com
©2003 Maxwell Technologies
All rights reserved.
28C010T
1 Megabit (128K x 8-Bit) EEPROM
TABLE 1. 28C010T PINOUT DESCRIPTION
PIN
SYMBOL
DESCRIPTION
12-5, 27, 26, 23, 25, 4, 28, 3, 31, 2
A0-A16
Address
13, 14, 15, 17, 18, 19, 20, 21
I/O0 - I/O7 Data I/O
24
22
29
32
16
1
OE
CE
WE
Output Enable
Chip Enable
Write Enable
Power Supply
Ground
V
CC
V
SS
RDY/BUSY Ready/Busy
RES Reset
30
TABLE 2. 28C010T ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
Supply Voltage (Relative to V )
V
-0.6
-0.5 1
+7.0
+7.0
V
V
SS
CC
Input Voltage (Relative to V )
V
SS
IN
Package Weight
RP
RT
7.4
2.7
Grams
RD
10.9
2.4
Thermal Impedance (RP and RT Packages)
Thermal Impedance (DIP Package)
Operating Temperature Range
FJC
FJC
TOPR
TSTG
°C/W
°C/W
°C
2.17
-55
-65
+125
+150
Storage Temperature Range
°C
1. V min = -3.0V for pulse width < 50ns.
IN
1
TABLE 3. DELTA LIMITS
2
PARAMETER
VARIATION
ICC1
±10%
±10%
±10%
±10%
ICC2
ICC3A
ICC3B
1. Parameters are measured and recorded as Deltas per
MIL-STD-883 for Class S Devices
2. Specified in Table 6
06.03.03 REV 14
All data sheets are subject to change without notice
2
©2003 Maxwell Technologies
All rights reserved.
28C010T
1 Megabit (128K x 8-Bit) EEPROM
TABLE 4. 28C010T RECOMMENDED OPERATING CONDITIONS
PARAMETER
SYMBOL
MIN
MAX
UNITS
Supply Voltage
Input Voltage
V
4.5
-0.31
2.2
5.5
0.8
V
V
CC
V
IL
V
VCC +0.3
IH
V
VCC -0.5
VCC +1
H
RES_PIN
1. V min = -1.0V for pulse width < 50 ns
IL
TABLE 5. 28C010T CAPACITANCE
(T = 25 °C, f = 1 MHZ)
A
PARAMETER
SYMBOL
MIN
MAX
UNITS
Input Capacitance: V = 0V 1
CIN
--
--
6
pF
pF
IN
Output Capacitance: VOUT = 0V 1
COUT
12
1. Guaranteed by design.
TABLE 6. 28C010T DC ELECTRICAL CHARACTERISTICS
(VCC = 5V ± 10%, TA = -55 TO +125 °C, UNLESS OTHERWISE SPECIFIED)
PARAMETER
TEST CONDITION
SUBGROUPS
SYMBOL
MIN
MAX
UNITS
Input Leakage Current
Output Leakage Current
V
CC = 5.5V, V = 5.5V
1, 2, 3
1, 2, 3
1, 2, 3
I
--
--
--
--
--
2 1
2
µA
µA
µA
mA
mA
IN
IL
VCC = 5.5V, VOUT = 5.5V/0.4V
ILO
ICC1
ICC2
ICC3A
Standby V Current
CE = V
20
1
CC
CC
CE = V
IH
Operating VCC Current
Input Voltage
IOUT = 0mA, Duty = 100%,
Cycle = 1µs at VCC = 5.5V
1, 2, 3
1, 2, 3
1, 2, 3
15
IOUT = 0mA, Duty = 100%,
ICC3B
--
50
Cycle = 150ns at VCC = 5.5V
V
--
0.8
--
V
V
IL
V
2.2
IH
RES_PIN
V
V
CC -0.5
--
H
Output Voltage2
IOL = 2.1 mA
OH = - 0.4 mA
IOH= - 0.1 mA
1, 2, 3
V
--
0.4
--
OL
I
V
2.4
OH
V
V -0.3V
OH
CC
1. ILI for RES = 100uA max.
2. RDY/BSY is an open drain output. Only VOL applies to this pin.
06.03.03 REV 14
All data sheets are subject to change without notice
3
©2003 Maxwell Technologies
All rights reserved.
28C010T
1 Megabit (128K x 8-Bit) EEPROM
1
TABLE 7. 28C010T AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION
(VCC = 5V + 10%, TA = -55 TO +125 °C)
PARAMETER
SYMBOL
SUBGROUPS
MIN
MAX
UNITS
Address Access Time
CE = OE = V , WE = V
tACC
9, 10, 11
ns
IL
IH
-120
-150
-200
--
--
--
120
150
200
Chip Enable Access Time
OE = V , WE = V
-120
-150
-200
tCE
tOE
tOH
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
ns
ns
ns
ns
IL
IH
--
--
--
120
150
200
Output Enable Access Time
CE = V , WE = V
IL
IH
-120
-150
-200
0
0
0
75
75
100
Output Hold to Address Change
CE = OE = V , WE = V
IL
IH
-120
-150
-200
0
0
0
--
--
--
Output Disable to High-Z 2
CE = V , WE = V
tDF
IL
IH
-120
-150
-200
0
0
0
50
50
60
CE = OE = V , WE = V
IL
IH
-120
-150
-200
tDFR
0
0
0
300
350
450
RES to Output Delay3
CE = OE = V , WE = V
tRR
9, 10, 11
ns
IL
IH
-120
-150
-200
--
--
--
400
450
650
1. Test conditions: Input pulse levels - 0.4V to 2.4V; input rise and fall times < 20ns; output load - 1 TTL gate + 100pF (including
scope and jig); reference levels for measuring timing - 0.8V/1.8V.
2. tDF and tDFR are defined as the time at which the output becomes an open circuit and data is no longer driven.
3. Guaranteed by design.
06.03.03 REV 14
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4
©2003 Maxwell Technologies
All rights reserved.
28C010T
1 Megabit (128K x 8-Bit) EEPROM
TABLE 8. 28C010T AC ELECTRICAL CHARACTERISTICS FOR
PAGE/BYTE ERASE AND PAGE/BYTE WRITE OPERATIONS
(VCC = 5V + 10%, TA = -55 TO +125 °C)
1
PARAMETER
SYMBOL
SUBGROUPS
MAX
UNITS
MIN
Address Setup Time
tAS
9, 10, 11
ns
-120
-150
-200
0
0
0
--
--
--
Chip Enable to Write Setup Time (WE controlled)
tCS
9, 10, 11
9, 10, 11
-120
-150
-200
0
0
0
--
--
--
ns
ns
Write Pulse Width
CE controlled
-120
tCW
200
250
350
--
--
--
-150
-200
WE controlled
-120
-150
tWP
200
250
350
--
--
--
-200
Address Hold Time
tAH
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
ns
ns
ns
-120
-150
-200
150
150
200
--
--
--
Data Setup Time
tDS
-120
-150
-200
75
100
150
--
--
--
Data Hold Time
-120
-150
tDH
tCH
tWS
tWH
10
10
10
--
--
--
-200
Chip Enable Hold Time (WE controlled)
-120
-150
-2000
0
0
0
--
--
--
ns
ns
Write Enable to Write Setup Time (CE controlled)
-120
-150
-200
0
0
0
--
--
--
Write Enable Hold Time (CE controlled)
ns
-120
-150
-200
0
0
0
--
--
--
06.03.03 REV 14
All data sheets are subject to change without notice
5
©2003 Maxwell Technologies
All rights reserved.
28C010T
1 Megabit (128K x 8-Bit) EEPROM
TABLE 8. 28C010T AC ELECTRICAL CHARACTERISTICS FOR
PAGE/BYTE ERASE AND PAGE/BYTE WRITE OPERATIONS
(VCC = 5V + 10%, TA = -55 TO +125 °C)
1
PARAMETER
SYMBOL
SUBGROUPS
MAX
UNITS
MIN
Output Enable to Write Setup Time
tOES
9, 10, 11
ns
-120
-150
-200
0
0
0
--
--
--
Output Enable Hold Time
tOEH
tWC
tDL
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
ns
ms
ns
-120
-150
-200
0
0
0
--
--
--
Write Cycle Time2
-120
-150
-200
--
--
--
10
10
10
Data Latch Time
-120
-150
-200
250
300
400
--
--
--
Byte Load Window
tBL
µs
µs
ns
-120
-150
-200
100
100
200
--
--
--
Byte Load Cycle
tBLC
-120
-150
-200
0.55
0.55
0.95
30
30
30
Time to Device Busy
tDB
-120
-150
-200
100
120
170
--
--
--
Write Start Time3
tDW
ns
-120
-150
-200
150
150
250
--
--
--
RES to Write Setup Time4
tRP
µs
µs
-120
-150
-200
100
100
200
--
--
--
V
CC to RES Setup Time4
tRES
-120
-150
-200
1
1
3
--
--
--
1. Use this device in a longer cycle than this value.
06.03.03 REV 14
All data sheets are subject to change without notice
6
©2003 Maxwell Technologies
All rights reserved.
28C010T
1 Megabit (128K x 8-Bit) EEPROM
2. tWC must be longer than this value unless polling techniques or RDY/BUSY are used. This device automatically completes the
internal write operation within this value.
3. Next read or write operation can be initiated after tDW if polling techniques or RDY/BUSY are used.
4. Guaranteed by design.
1
TABLE 9. 28C010T MODE SELECTION
PARAMETER
CE
OE
WE
I/O
RES
RDY/BUSY
Read
V
V
V
DOUT
V
High-Z
High-Z
IL
IL
IH
H
Standby
Write
V
X
X
High-Z
X
IH
V
V
V
D
V
High-Z --> V
OL
IL
IH
IL
IN
H
Deselect
Write Inhibit
V
V
V
High-Z
V
High-Z
IL
IH
IH
H
X
X
X
V
--
--
X
X
--
--
IH
V
X
IL
Data Polling
Program
V
V
V
Data Out (I/O7)
High-Z
V
V
IL
IL
IH
H
OL
X
X
X
V
High-Z
IL
1. X = Don’t care.
FIGURE 1. READ TIMING WAVEFORM
06.03.03 REV 14
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7
©2003 Maxwell Technologies
All rights reserved.
28C010T
1 Megabit (128K x 8-Bit) EEPROM
FIGURE 2. BYTE WRITE TIMING WAVEFORM(1) (WE CONTROLLED)
06.03.03 REV 14
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8
©2003 Maxwell Technologies
All rights reserved.
28C010T
1 Megabit (128K x 8-Bit) EEPROM
FIGURE 3. BYTE WRITE TIMING WAVEFORM (2) (CE CONTROLLED)
06.03.03 REV 14
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9
©2003 Maxwell Technologies
All rights reserved.
28C010T
1 Megabit (128K x 8-Bit) EEPROM
FIGURE 4. PAGE WRITE TIMING WAVEFORM(1) (WE CONTROLLED)
06.03.03 REV 14
All data sheets are subject to change without notice 10
©2003 Maxwell Technologies
All rights reserved.
28C010T
1 Megabit (128K x 8-Bit) EEPROM
FIGURE 5. PAGE WRITE TIMING WAVEFORM(2) (CE CONTROLLED)
FIGURE 6. DATA POLLING TIMING WAVEFORM
06.03.03 REV 14
All data sheets are subject to change without notice 11
©2003 Maxwell Technologies
All rights reserved.
28C010T
1 Megabit (128K x 8-Bit) EEPROM
FIGURE 7. SOFTWARE DATA PROTECTION TIMING WAVEFORM(1) (ENABLE S/W PROTECTION)
FIGURE 8. SOFTWARE DATA PROTECTION TIMING WAVEFORM(2) (DISABLE S/W PROTECTION)
EEPROM APPLICATION NOTES
This application note describes the programming procedures for the EEPROM modules and with details of various
techniques to preserve data protection.
Automatic Page Write
Page-mode write feature allows 1 to 128 bytes of data to be written into the EEPROM in a single write cycle, and
allows the undefined data within 128 bytes to be written corresponding to the undefined address (A0 to A6). Loading
the first byte of data, the data load window opens 30µs for the second byte. In the same manner each additional byte
of data can be loaded within 30µs. In case CE and WE are kept high for 100 µs after data input, EEPROM enters
erase and write mode automatically and only the input data are written into the EEPROM.
06.03.03 REV 14
All data sheets are subject to change without notice 12
©2003 Maxwell Technologies
All rights reserved.
28C010T
1 Megabit (128K x 8-Bit) EEPROM
WE, CE Pin Operation
During a write cycle, addresses are latched by the falling edge of WE or CE, and data is latched by the rising edge of
WE or CE.
Data Polling
Data Polling function allows the status of the EEPROM to be determined. If EEPROM is set to read mode during a
write cycle, an inversion of the last byte of data to be loaded outputs from I/O 7 to indicate that the EEPROM is per-
forming a write operation.
RDY/Busy Signal
RDY/Busy signal also allows a comparison operation to determine the status of the EEPROM. The RDY/Busy signal
has high impedance except in write cycle and is lowered to V after the first write signal. At the-end of a write cycle,
OL
the RDY/Busy signal changes state to high impedance.
RES Signal
When RES is LOW, the EEPROM cannot be read and programmed. Therefore, data can be protected by keeping
RES low when V is switched. RES should be high during read and programming because it doesn’t provide a latch
CC
function.
Data Protection
To protect the data during operation and power on/off, the EEPROM has the internal functions described below.
1. Data Protection against Noise of Control Pins (CE, OE, WE) during Operation.
06.03.03 REV 14
All data sheets are subject to change without notice 13
©2003 Maxwell Technologies
All rights reserved.
28C010T
1 Megabit (128K x 8-Bit) EEPROM
During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to programming mode by mis-
take. To prevent this phenomenon, the EEPROM has a noise cancellation function that cuts noise if its width is 20ns or less in
programming mode. Be careful not to allow noise of a width of more than 20ns on the control pins.
2. Data Protection at VCC on/off
When V is turned on or off, noise on the control pins generated by external circuits, such as CPUs, may turn the EEPROM to
CC
programming mode by mistake. To prevent this unintentional programming, the EEPROM must be kept in unprogrammable
state during VCC on/off by using a CPU reset signal to RES pin.
RES should be kept at V level when VCC is turned on or off. The EEPROM breaks off programming operation when RES
SS
become low, programming operation doesn’t finish correctly in case that RES falls low during programming operation. RES
should be kept high for 10 ms after the last data input.
tWC
tRES
tRP
3. Software Data Protection
06.03.03 REV 14
All data sheets are subject to change without notice 14
©2003 Maxwell Technologies
All rights reserved.
28C010T
1 Megabit (128K x 8-Bit) EEPROM
The software data protection function is to prevent unintentional programming caused by noise generated by external circuits.
In software data protection mode, 3 bytes of data must be input before write data as follows. These bytes can switch the non-
protection mode to the protection mode.
Software data protection mode can be canceled by inputting the following 6 bytes. Then, the EEPROM turns to the non-protec-
tion mode and can write data normally. However, when the data is input in the canceling cycle, the data cannot be written.
06.03.03 REV 14
All data sheets are subject to change without notice 15
©2003 Maxwell Technologies
All rights reserved.
28C010T
1 Megabit (128K x 8-Bit) EEPROM
1
32 PIN DUAL IN-LINE PACKAGE
DIMENSION
SYMBOL
MIN
NOM
MAX
A
b
--
0.187
0.018
0.225
0.020
0.065
0.012
1.616
0.610
0.016
0.045
0.009
--
b2
c
0.050
0.010
D
1.600
E
0.510
0.590
eA
eA/2
e
0.600 BSC
0.300 BSC
0.100 BSC
0.145
L
0.135
0.015
0.005
0.005
0.155
0.060
--
Q
0.037
S1
S2
N
0.025
--
--
32
1. Standard Product Screening Flow MIL-STD-883, Method 2001, Constant Acceleration: For this package type
Constant Acceleration is 3000g’s.
Note: All dimensions in inches
06.03.03 REV 14
All data sheets are subject to change without notice 16
©2003 Maxwell Technologies
All rights reserved.
28C010T
1 Megabit (128K x 8-Bit) EEPROM
D
28C010T 32-PIN RAD-PAK® FLAT PACKAGE
DIMENSION
SYMBOL
MIN
NOM
MAX
A
b
0.121
0.015
0.004
--
0.134
0.017
0.005
0.820
0.480
--
0.147
0.022
0.009
0.830
0.488
0.498
--
c
D
E
0.472
--
E1
E2
E3
e
0.304
0.030
0.310
0.085
0.050BSC
0.365
0.035
0.027
32
--
L
0.355
0.020
0.005
0.375
0.045
--
Q
S1
N
Note: All dimensions in inches.
06.03.03 REV 14
All data sheets are subject to change without notice 17
©2003 Maxwell Technologies
All rights reserved.
28C010T
1 Megabit (128K x 8-Bit) EEPROM
D
28C010T Rad-Tolerant Flat Package
SYMBOL
DIMENSION
NOM
MIN
MAX
A
b
0.095
0.015
0.004
--
0.109
0.017
0.005
0.820
0.480
--
0.125
0.022
0.009
0.830
0.488
0.498
--
c
D
E
0.472
--
E1
E2
E3
e
0.350
0.030
0.365
0.085
0.050BSC
0.365
0.035
0.027
32
--
L
0.355
0.020
0.005
0.375
0.045
--
Q
S1
N
Note: All Dimentions in Inches
06.03.03 REV 14
All data sheets are subject to change without notice 18
©2003 Maxwell Technologies
All rights reserved.
28C010T
1 Megabit (128K x 8-Bit) EEPROM
Important Notice:
These data sheets are created using the chip manufacturers published specifications. Maxwell Technologies verifies
functionality by testing key parameters either by 100% testing, sample testing or characterization.
The specifications presented within these data sheets represent the latest and most accurate information available to
date. However, these specifications are subject to change without notice and Maxwell Technologies assumes no
responsibility for the use of this information.
Maxwell Technologies’ products are not authorized for use as critical components in life support devices or systems
without express written approval from Maxwell Technologies.
Any claim against Maxwell Technologies must be made within 90 days from the date of shipment from Maxwell Tech-
nologies. Maxwell Technologies’ liability shall be limited to replacement of defective parts.
06.03.03 REV 14
All data sheets are subject to change without notice 19
©2003 Maxwell Technologies
All rights reserved.
28C010T
1 Megabit (128K x 8-Bit) EEPROM
Product Ordering Options
Model Number
28C010T
XX
F
X
-XX
Option Details
12 = 120 ns
Feature
Access Time
15 = 150 ns
20 = 200 ns
Monolithic
Screening Flow
S = Maxwell Class S
B = Maxwell Class B
I = Industrial (testing @ -55°C,
+25°C, +125°C)
E = Engineering (testing @ +25°C)
D = Dual In-line Package (DIP)1
F = Flat Pack
Package1
RP = RAD-PAK® package
RT = No Radiation Guarantee
CLass E and I Only
Radiation Feature
RT1 = Guaranteed to 10 krad at
die level
RT2 = Guaranteed to 25 krad at
die level
RT4 = Guaranteed to 40 krad at
1 Megabit (128k x 8-bit) EEPROM
Base Product
Nomenclature
1) Standard Product Screening Flow MIL-STD-883, Method 2001, Constant Acceleration :For DIP package type
Constant Acceleration is 3000g’s.
06.03.03 REV 14
All data sheets are subject to change without notice 20
©2003 Maxwell Technologies
All rights reserved.
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