MAX4519EEE+ [MAXIM]
Differential Multiplexer, 1 Func, 2 Channel, CMOS, PDSO16, QSOP-16;
| 型号： | MAX4519EEE+ |
| 厂家： | 
MAXIM INTEGRATED PRODUCTS |
| 描述： | Differential Multiplexer, 1 Func, 2 Channel, CMOS, PDSO16, QSOP-16 复用器 |
| 文件： | 总12页 (文件大小：172K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
19-1070; Rev. 1; 5/98
P re c is io n , 4 -Ch a n n e l/Du a l 2 -Ch a n n e l,
Lo w -Vo lt a g e , CMOS An a lo g Mu lt ip le x e rs
8/MAX4519
________________Ge n e ra l De s c rip t io n
____________________________Fe a t u re s
The MAX4518/MAX4519 precision, monolithic, CMOS
analog multiplexers (muxes) offer low on-resistance
(le s s tha n 100Ω), whic h is ma tc he d to within 4Ω
between channels and remains flat over the specified
analog signal range (10Ω max). They also offer low leak-
age over temperature (NO-off leakage current less than
2nA at +85°C) and fast switching speeds (transition time
less than 250ns). The MAX4518 is a 4-channel device,
and the MAX4519 is a dual 2-channel device.
♦ Guaranteed On-Resistance Match
Between Channels (<4Ω )
♦ Low On-Resistance (<100Ω )
♦ Guaranteed Flat On-Resistance over Signal
Range (<10Ω)
♦ Guaranteed Low Charge Injection (<5pC)
♦ NO-Off Leakage Current <2nA at +85°C
♦ COM-Off Leakage Current <5nA at +85°C
♦ Electrostatic Discharge Protection >2000V
The MAX4518/MAX4519 are fabricated with Maxim’s
low-voltage silicon-gate process. Design improvements
yield extremely low charge injection (less than 5pC) and
guarantee electrostatic discharge protection greater than
2000V.
♦ Single-Supply Operation (+2.7V to +15V)
Bipolar-Supply Operation (±2.7V to ±8V)
♦ Low Power Consumption (<300µW)
♦ Rail-to-Rail Signal Handling
These muxes operate with a single +2.7V to +15V supply
or with bipolar ±2.7V to ±8V supplies, while retaining
CMOS-logic input compatibility and fast switching. CMOS
inputs provide reduced input loading.
♦ TTL/CMOS-Logic Compatible
_______________Ord e rin g In fo rm a t io n
________________________Ap p lic a t io n s
Sample-and-Hold Circuits
Automatic Test Equipment
Heads-Up Displays
PART
TEMP. RANGE
0°C to +70°C
0°C to +70°C
0°C to +70°C
0°C to +70°C
0°C to +70°C
-40°C to +85°C
-40°C to +85°C
-55°C to +125°C
PIN-PACKAGE
14 Plastic DIP
14 SO
MAX4518CPD
MAX4518CSD
MAX4518CEE
MAX4518C/D
MAX4518EPD
MAX4518ESD
MAX4518EEE
MAX4518MJD
16 QSOP
Dice*
Guidance and Control Systems
Military Radios
Communications Systems
Battery-Operated Systems
PBX, PABX
14 Plastic DIP
14 SO
16 QSOP
14 CERDIP**
Ordering Information continued at end of data sheet.
* Contact factory for dice specifications.
** Contact factory for package availability.
Audio Signal Routing
Low-Voltage Data-Acquisition Systems
__________________________________________________________P in Co n fig u ra t io n s
TOP VIEW
MAX4518
MAX4519
A0
EN
A0
EN
A1
A1
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
GND
V+
GND
V+
V-
V-
LOGIC
LOGIC
NO1
NO1A
NO3
NO4
N.C.
N.C.
N.C.
NO1B
NO2B
N.C.
NO2
N.C.
NO2A
N.C.
N.C.
N.C.
N.C.
COM
COMA
COMB
QSOP
QSOP
N.C. = NOT INTERNALLY CONNECTED
________________________________________________________________ Maxim Integrated Products
1
For free samples & the latest literature: http://www.maxim-ic.com, or phone 1-800-998-8800.
For small orders, phone 1-800-835-8769.
P re c is io n , 4 -Ch a n n e l/Du a l 2 -Ch a n n e l,
Lo w -Vo lt a g e , CMOS An a lo g Mu lt ip le x e rs
ABSOLUTE MAXIMUM RATINGS
(Voltage Referenced to GND)
V+ ...........................................................................-0.3V to +17V
V- ............................................................................+0.3V to -17V
V+ to V-...................................................................-0.3V to +17V
Voltage into NO_, NC_ (Note 1) .......(V- - 0.3V) to (V+ + 0.3V) or
30mA (whichever occurs first)
Voltage into EN, A0, A1 (Note 1) ............(V- - 0.3V) to (V- + 17V)
Current into Any Terminal ...................................................30mA
Peak Current, Any Terminal
Continuous Power Dissipation (T = +70°C)
A
Plastic DIP (derate 10.0mW/°C above +70°C) ............800mW
Narrow SO (derate 8.0mW/°C above +70°C) ..............640mW
QSOP (derate 9.52mW/°C above +70°C)....................762mW
CERDIP (derate 9.09mW/°C above +70°C).................727mW
Operating Temperature Ranges
MAX4518C_ _ /MAX4519C_ _ ............................0°C to +70°C
MAX4518E_ _ /MAX4519E_ _ ..........................-40°C to +85°C
MAX4518MJD/MAX4519MJD........................-55°C to +125°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10sec) .............................+300°C
(pulsed at 1ms, 10% duty cycle max) ............................40mA
Note 1: Signals on any terminal exceeding V+ or V- are clamped by internal diodes. Limit forward current to maximum current ratings.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS—Dual Supplies
8/MAX4519
(V+ = +4.5V to +5.5V, V- = -4.5V to -5.5V, GND = 0V, V = V
= 2.4V, V = V
= 0.8V, T = T
to T
,
AH
ENH
AL
ENL
A
MIN
MAX
unless otherwise noted.)
MIN
TYP
(Note 2)
MAX
PARAMETER
SYMBOL
CONDITIONS
UNITS
SWITCH
Analog Signal Range
V
, V
(Note 3)
= 1mA, V = ±3V
COM
V-
V+
100
125
4
V
COM NO
T
= +25°C
60
A
Channel On-Resistance
R
I
NO
Ω
ON
T
A
= T
to T
MIN
MAX
MAX
MAX
T
A
= +25°C
On-Resistance Matching
Between Channels (Note 4)
I
NO
= 1mA, V
= ±3.5V,
COM
∆R
Ω
Ω
ON
V+ = 5V, V- = -5V
T
A
= T
to T
6
MIN
T
A
= +25°C
10
13
0.1
2
On-Resistance Flatness
(Note 5)
I
= 1mA; V
= ±3V, 0V;
±
NO
COM
R
FLAT(ON)
V+ = 5V; V- = -5V
T
A
= T
to T
MIN
T
A
= +25°C
-0.1
-2
NO-Off Leakage Current
(Note 6)
V
= ±4.5V, V
=
COM
4.5V,
NO
I
C, E
M
nA
NO(OFF)
T
= T
to
A
MIN
V+ = 5.5V, V- = -5.5V
T
MAX
-20
-0.2
-5
20
0.2
5
T
A
= +25°C
MAX4518
MAX4519
MAX4518
MAX4519
C, E
M
T
= T
to
A
MIN
V
= ±4.5V,
4.5V,
COM
T
MAX
-40
-0.1
-3
40
0.1
3
COM-Off Leakage Current
(Note 6)
±
I
V
=
nA
COM(OFF)
NO
T
A
= +25°C
V+ = 5.5V, V- = -5.5V
C, E
M
T
= T
to
A
MIN
T
MAX
-20
-0.4
-10
-100
-0.2
-5
20
0.4
10
100
0.2
5
T
A
= +25°C
C, E
M
T
= T
to
A
MIN
T
MAX
COM-On Leakage Current
(Note 6)
V
= ±4.5V,
= ±4.5V,
COM
I
nA
COM(ON)
V
NO
T
A
= +25°C
C, E
M
T
= T
to
A
MIN
T
MAX
-50
50
2
_______________________________________________________________________________________
P re c is io n , 4 -Ch a n n e l/Du a l 2 -Ch a n n e l,
Lo w -Vo lt a g e , CMOS An a lo g Mu lt ip le x e rs
8/MAX4519
ELECTRICAL CHARACTERISTICS—Dual Supplies (continued)
(V+ = +4.5V to +5.5V, V- = -4.5V to -5.5V, GND = 0V, V = V
= 2.4V, V = V
= 0.8V, T = T
to T
,
AH
ENH
AL
ENL
A
MIN
MAX
unless otherwise noted.)
MIN
TYP
(Note 2)
MAX
PARAMETER
SYMBOL
CONDITIONS
UNITS
DIGITAL LOGIC INPUT
Logic High Input Voltage
Logic Low Input Voltage
V
, V
T
= T
= T
to T
to T
2.4
0
V+
V
V
AH ENH
A
MIN
MAX
V
, V
AL ENL
T
A
0.8
MIN
MAX
Input Current with
Input Voltage High
I
, I
V
= V = 2.4V
-0.1
-0.1
0.1
0.1
µA
µA
AH ENH
A
EN
Input Current with
Input Voltage Low
I
, I
AL ENL
V = V = 0.8V
A EN
SUPPLY
Power-Supply Range
V+, V-
I+
±2.7
-1
±8
1
V
T
= +25°C
A
V
= V = 0V/V+,
A
EN
Positive Supply Current
Negative Supply Current
µA
V+ = 5.5V, V- = -5.5V
T
A
= T
to T
-10
-1
10
1
MIN
MAX
MAX
MAX
T
A
= +25°C
V
= V = 0V/V+,
EN
A
I-
µA
µA
V+ = 5.5V, V- = -5.5V
T
A
= T
to T
-10
-1
10
1
MIN
T
A
= +25°C
V
= V = 0V/V+,
EN
A
Ground Current
I
GND
V+ = 5.5V, V- = -5.5V
T
A
= T
to T
-10
10
MIN
DYNAMIC
T
= +25°C
150
250
A
Transition Time
t
Figure 2
Figure 4
Figure 3
ns
ns
ns
TRANS
T
A
= T to T
MIN MAX
Break-Before-Make Interval
Enable Turn-On Time
t
T
A
= +25°C
= +25°C
0
40
60
OPEN
T
A
150
250
150
200
t
ON(EN)
T
A
= T
to T
MIN
MAX
MAX
T
A
= +25°C
40
Enable Turn-Off Time
Charge Injection (Note 3)
Off Isolation (Note 7)
t
Figure 3
ns
OFF(EN)
T
A
= T
to T
MIN
Figure 5,
= 0Ω
C = 1.0nF, V = 0V,
L S
Q
T
A
= +25°C
= +25°C
= +25°C
0
5
pC
dB
dB
R
S
Figure 6, V = 0V, R = 1kΩ,
f = 100kHz
EN
L
V
ISO
T
A
-75
-92
Crosstalk Between
Channels
Figure 6, V = 2.4V, f = 100kHz,
EN
V
CT
T
A
V
GEN
= 1Vp-p, R = 1kΩ
L
Logic Input Capacitance
NO-Off Capacitance
C
f = 1MHz
f = 1MHz, V = V = 0V
T
= +25°C
T = +25°C
A
8
pF
pF
IN
A
C
5
NO(OFF)
EN
D
MAX4518
MAX4519
MAX4518
MAX4519
16
10
27
17
COM-Off Capacitance
COM-On Capacitance
C
f = 1MHz, V = V = 0V
T = +25°C
pF
pF
COM(OFF)
EN
D
A
C
f = 1MHz, V = V = 0V
T = +25°C
A
COM(ON)
EN
D
_______________________________________________________________________________________
3
P re c is io n , 4 -Ch a n n e l/Du a l 2 -Ch a n n e l,
Lo w -Vo lt a g e , CMOS An a lo g Mu lt ip le x e rs
ELECTRICAL CHARACTERISTICS—Single +5V Supply
(V+ = +4.5V to +5.5V, V- = 0V, GND = 0V, V = V
= 2.4V, V = V
= 0.8V, T = T
to T , unless otherwise noted.)
MAX
AH
ENH
AL
ENL
A
MIN
MIN
TYP
(Note 2)
MAX
PARAMETER
SWITCH
SYMBOL
CONDITIONS
UNITS
Analog Signal Range
V
, V
(Note 3)
V-
V+
225
280
10
V
COM NO
T
= +25°C
150
A
I
NO
= 1mA, V
= 3.5V,
COM
On-Resistance
R
Ω
ON
V+ = 4.5V
T
A
= T to T
MIN MAX
T
A
= +25°C
On-Resistance Matching
Between Channels (Note 4)
I
NO
= 1mA, V
= 3V,
COM
∆R
Ω
Ω
ON
V+ = 4.5V
T
A
= T
to T
12
MIN
MAX
T
A
= +25°C
10
15
19
I
NO
= 1mA; V
= 3V, 2V, 1V;
COM
On-Resistance Flatness
R
FLAT
V+ = 5V
T
A
= T
to T
23
MIN
MAX
T
= +25°C
-0.1
-1.0
-10
-0.2
-2.5
-20
-0.2
-1.5
-10
-0.4
-5
0.1
1.0
10
A
NO-Off Leakage Current
(Note 8)
V
= 4.5V, V
= 0V,
COM
NO
I
C, E
M
nA
NO(OFF)
T
= T
to
A
MIN
V+ = 5.5V
T
MAX
8/MAX4519
T
A
= +25°C
0.2
2.5
20
MAX4518
C, E
M
T
= T
to
A
MIN
V
= 4.5V,
= 0V,
COM
T
MAX
COM-Off Leakage Current
(Note 8)
I
V
nA
COM(OFF)
NO
T
A
= +25°C
0.2
1.5
10
V+ = 5.5V
MAX4519
MAX4518
MAX4519
C, E
M
T
= T
to
A
MIN
T
MAX
T
A
= +25°C
0.4
5
C, E
M
T
= T
to
A
MIN
V
V
= 4.5V,
= 4.5V,
NO
COM
T
MAX
-40
-0.2
-2.5
-20
40
COM-On Leakage Current
(Note 8)
I
nA
COM(ON)
T
A
= +25°C
0.2
2.5
20
V+ = 5.5V
C, E
M
T
= T
to
A
MIN
T
MAX
DIGITAL LOGIC INPUT
Logic High Input Voltage
Logic Low Input Voltage
V
, V
T
= T
= T
to T
to T
2.4
0
V+
V
V
AH ENH
A
MIN
MAX
V
, V
AL ENL
T
A
0.8
MIN
MAX
Input Current with
Input Voltage High
I
, I
V
= V = 2.4V
-0.1
-0.1
0.1
0.1
µA
µA
AH ENH
A
EN
Input Current with
Input Voltage Low
I
, I
V = V = 0.8V
A EN
AL ENL
SUPPLY
Power-Supply Range
Positive Supply Current
Negative Supply Current
V+
I+
I-
2.7
-10
-10
-1.0
-10
15
10
10
1.0
10
V
V
= V = 0V, V+; V+ = 5.5V; V- = 0V
µA
µA
EN
A
V
EN
= V = 0V, V+; V+ = 5.5V; V- = 0V
A
T
A
= +25°C
V
= V+, 0V; V = 0V;
A
EN
I
I
µA
GND Supply Current
GND
V+ = 5.5V; V- = 0V
T
A
= T
to T
MIN MAX
4
_______________________________________________________________________________________
P re c is io n , 4 -Ch a n n e l/Du a l 2 -Ch a n n e l,
Lo w -Vo lt a g e , CMOS An a lo g Mu lt ip le x e rs
8/MAX4519
ELECTRICAL CHARACTERISTICS—Single +5V Supply (continued)
(V+ = +4.5V to +5.5V, V- = 0V, GND = 0V, V = V
= 2.4V, V = V
= 0.8V, T = T
to T , unless otherwise noted.)
MAX
AH
ENH
AL
ENL
A
MIN
MIN
TYP
(Note 2)
MAX
PARAMETER
DYNAMIC
SYMBOL
CONDITIONS
UNITS
Transition Time
t
V
= 3V
90
40
90
245
ns
ns
NO
TRANS
Break-Before-Make Interval
t
T
= +25°C
= +25°C
10
OPEN
A
T
A
200
275
125
200
5
Enable Turn-On Time
t
ns
ON(EN)
T
A
= T to T
MIN MAX
T
A
= +25°C
50
0
Enable Turn-Off Time
t
ns
OFF(EN)
T
A
= T to T
MIN MAX
Charge Injection (Note 3)
Q
C
= 1.0nF, V = 0V, R = 0Ω
T = +25°C
A
pC
L
S
S
ELECTRICAL CHARACTERISTICS—Single +3V Supply
(V+ = +2.7V to +3.3V, V- = 0V, GND = 0V, V = V
= 2.4V, V = V
= 0.8V, T = T
to T , unless otherwise noted.)
MAX
AH
ENH
AL
ENL
A
MIN
MIN
TYP
(Note 2)
MAX
PARAMETER
SWITCH
SYMBOL
CONDITIONS
UNITS
Analog Signal Range
V
(Note 3)
V-
V+
V
ANALOG
T
= +25°C
230
375
425
A
I
= 0.1mA, V
= 1.5V,
NO
COM
On-Resistance
R
Ω
ON
V+ = 3V
T
A
= T to T
MIN MAX
DYNAMIC
Figure 1, V = 2.4V,
IN
Transition Time (Note 3)
t
T
= +25°C
= +25°C
= +25°C
= +25°C
230
200
75
575
500
400
5
ns
ns
ns
TRANS
A
V
INL
= 0V, V
= 1.5V
N01
Figure 3, V
= 2.4V,
INH
Enable Turn-On Time (Note 3)
Enable Turn-Off Time (Note 3)
Charge Injection (Note 3)
t
T
A
ON(EN)
V
INL
= 0V, V
= 1.5V
N01
Figure 3, V
= 2.4V,
INH
t
T
A
OFF(EN)
V
INL
= 0V, V
= 1.5V
N01
pC
Figure 5, C = 1.0nF,
L
Q
T
A
0
V = 0V, R = 0Ω
S
S
Note 2: The algebraic convention, where the most negative value is a minimum and the most positive value a maximum, is used in
this data sheet.
Note 3: Guaranteed by design.
Note 4: ∆R
= R (max) - R (min).
ON ON
ON
Note 5: Flatness is defined as the difference between the maximum and minimum value of on-resistance as measured over the
specified analog signal ranges; i.e., V = 3V to 0V and 0V to -3V.
NO
Note 6: Leakage parameters are 100% tested at maximum rated hot operating temperature, and guaranteed by correlation at +25°C.
Note 7: Worst-case isolation is on channel 4 because of its proximity to the COM pin. Off isolation = 20log V
/V , V
COM NO COM
= output,
V
NO
= input to off switch.
Note 8: Leakage testing at single supply is guaranteed by correlation testing with dual supplies.
_______________________________________________________________________________________
5
P re c is io n , 4 -Ch a n n e l/Du a l 2 -Ch a n n e l,
Lo w -Vo lt a g e , CMOS An a lo g Mu lt ip le x e rs
__________________________________________Typ ic a l Op e ra t in g Ch a ra c t e ris t ic s
(T = +25°C, unless otherwise noted.)
A
ON-RESISTANCE vs. V
COM
ON-RESISTANCE vs. V
ON-RESISTANCE vs. V
COM
COM
AND TEMPERATURE
(DUAL SUPPLIES)
(SINGLE SUPPLY)
(DUAL SUPPLIES)
300
275
110
110
V+ = 5V
V- = -5V
V- = 0V
100
90
100
90
250
225
V± = ±3V
T = +125°C
A
80
70
80
70
200
175
150
125
T = +85°C
A
V+ = 3V
60
50
60
50
T = +25°C
A
V± = ±5V
100
75
V+ = 5V
T = -55°C
A
40
30
40
30
50
-5 -4 -3 -2 -1
0
1
2
3
4
5
0
1
2
3
4
5
-5 -4 -3 -2 -1
0
1
2
3
4
5
8/MAX4519
V
COM
(V)
V
COM
(V)
V
COM
(V)
ON-RESISTANCE vs. V
AND TEMPERATURE
(SINGLE SUPPLY)
COM
OFF-LEAKAGE vs.
TEMPERATURE
ON-LEAKAGE vs.
TEMPERATURE
1000
100
180
160
10,000
1000
100
V+ = 5.5V
V- = -5.5V
V+ = 5.5V
V- = -5.5V
V+ = 5V
V- = 0V
T = +125°C
A
140
120
100
80
T = +85°C
A
T = +25°C
A
10
1
10
1
T = -55°C
A
60
40
0.1
0.1
-50 -25
0
25 50
75 100 125
0
1
2
3
4
5
-50 -25
0
25 50
75 100 125
TEMPERATURE (°C)
V
COM
(V)
TEMPERATURE (°C)
V+ SUPPLY CURRENT
vs. LOGIC INPUT VOLTAGE
SUPPLY CURRENT vs.
TEMPERATURE
CHARGE INJECTION vs. V
COM
100
10
1
5
4
10
V+ = 5V
V- = -5V
= V = 0V, 5V
V
EN
A
3
2
1
I+
0.1
V = ±5V
V = 3V
I-
0
1
0.01
-1
V = 5V
-2
-3
-4
-5
0.001
0.0001
V+ = 5V
V- = -5V
0.00001
0.1
0
1
2
3
4
5
-5 -4 -3 -2 -1
0
1
2
3
4
5
-50 -25
0
25 50
75 100 125
LOGIC INPUT VOLTAGE (V)
V
COM
(V)
TEMPERATURE (°C)
6
_______________________________________________________________________________________
P re c is io n , 4 -Ch a n n e l/Du a l 2 -Ch a n n e l,
Lo w -Vo lt a g e , CMOS An a lo g Mu lt ip le x e rs
8/MAX4519
______________________________________________________________P in De s c rip t io n
PIN
MAX4518
DIP/SO
MAX4519
DIP/SO
NAME
FUNCTION
QSOP
QSOP
1
2
1
2
1
2
1
2
A0
Address 0 Logic Input
Enable Logic Input
EN
Negative Supply Voltage Input. Connect to GND for
single-supply operation.
3
3
3
3
V-
4
5
4
—
—
4
—
NO1
NO2
Analog Signal Normally Open number 1
5
—
Analog Signal Normally Open number 2
—
—
4
NO1A
NO2A
Analog Signal Normally Open number 1 -A switch
Analog Signal Normally Open number 2 -A switch
—
—
5
5
—
—
6
8
COMA Analog Signal Common -A switch
6
8
—
7, 8
9
—
COM
N.C.
Analog Signal Common
7, 8, 9
—
6, 7, 9, 10, 11
6, 7, 10, 11
Not internally connected
—
—
—
12
13
14
15
16
9
COMB
NO2B
NO1B
NO4
NO3
V+
Analog Signal Common -B switch
Analog Signal Normally Open number 2 -B switch
Analog Signal Normally Open number 1 -B switch
Analog Signal Normally Open number 4
Analog Signal Normally Open number 3
Positive Supply Voltage Input
—
10
11
—
—
12
13
14
12
13
—
—
14
15
16
—
10
11
12
13
14
GND
A1
Logic Ground Input
Address 1 Logic Input
_______________________________________________________________________________________
7
P re c is io n , 4 -Ch a n n e l/Du a l 2 -Ch a n n e l,
Lo w -Vo lt a g e , CMOS An a lo g Mu lt ip le x e rs
__________Ap p lic a t io n s In fo rm a t io n
+5V
Op e ra t io n w it h S u p p ly Vo lt a g e s
D1
Ot h e r t h a n ±5 V
V+
MAX4518
MAX4519
Using supply voltages less than ±5V reduces the analog
signal range. The MAX4518/MAX4519 muxes operate
with ±2.7V to ±8V bipolar supplies or with a +2.7V to
+15V single supply. Connect V- to GND when operating
with a single supply. Both device types can also operate
with unbalanced supplies, such as +10V and -5V. The
Typical Operating Characteristics graphs show typical
on-resistance with ±3V, ±5V, +3V and +5V supplies.
(Switching times increase by a factor of two or more for
operation at 5V.)
*
*
*
*
NO
COM
V-
D2
Ove rvo lt a g e P ro t e c t io n
Proper power-supply sequencing is recommended for
all CMOS devices. Do not exceed the absolute maxi-
mum ratings, because stresses beyond the listed rat-
ings can cause permanent damage to the devices.
Always sequence V+ on first, then V-, followed by the
logic inputs, NO, or COM. If power-supply sequencing
is not possible, add two small signal diodes (D1, D2) in
s e rie s with s up p ly p ins for ove rvolta g e p rote c tion
(Figure 1). Adding diodes reduces the analog signal
range to one diode drop below V+ and one diode drop
* INTERNAL PROTECTION DIODES
-5V
Figure 1. Overvoltage Protection Using External Blocking Diodes
8/MAX4519
above V-, but does not affect the devices’ low switch
resistance and low leakage characteristics. Device
operation is unchanged, and the difference between
V+ and V- should not exceed 17V. These protection
diodes are not recommended when using a single supply.
______________________________________________Te s t Circ u it s /Tim in g Dia g ra m s
+5V
V+
NO1
EN
V+
+5V
-5V
NO2–NO3
A0
A1
MAX4518
NO4
t < 20ns
R
LOGIC
INPUT
V
EN
+3V
0V
COM
t < 20ns
V
F
OUT
50%
GND
V-
35pF
50Ω
300Ω
V
, V
-5V
NO1A NO1B
+5V
V+
90%
SWITCH
OUTPUT
V
NO1B
V+
EN
OUT
0V
+5V
-5V
COMA, NO1A–NO2A
90%
V
, V
NO4 NO2B
A0
A1
MAX4519
NO2B
COMB
V
t
t
TRANS
OUT
TRANS
GND
V-
35pF
50Ω
300Ω
-5V
Figure 2. Transition Time
_______________________________________________________________________________________
8
P re c is io n , 4 -Ch a n n e l/Du a l 2 -Ch a n n e l,
Lo w -Vo lt a g e , CMOS An a lo g Mu lt ip le x e rs
8/MAX4519
_________________________________Te s t Circ u it s /Tim in g Dia g ra m s (c o n t in u e d )
V+
V+
V
EN
EN
NO1
V+
NO2–NO4
MAX4518
A0
A1
t
< 20ns
COM
R
V
OUT
V+
0V
t < 20ns
V
EN
F
GND
V-
50%
50Ω
35pF
1k
-5V
V+
V+
V
OUT
V
EN
V+
EN
NO1B
NO2B
V+
90% 90%
COMA, NO1A–NO1A
A0
A1
MAX4519
COMB
0V
t
V
OUT
t
ON
OFF
GND
V-
50Ω
35pF
1k
-5V
Figure 3. Enable Switching Time
+5V
V+
V
EN
t
< 20ns
R
+2.4V
EN
+3V
t < 20ns
LOGIC
INPUT
V
A
F
50%
NO1–NO4
+5V
0V
+5V
A0
A1
MAX4518
80%
V
A
SWITCH
OUTPUT
V
OUT
COM
V
OUT
GND
V-
35pF
t
OPEN
0V
300Ω
50Ω
-5V
Figure 4. Break-Before-Make Interval
_______________________________________________________________________________________
9
P re c is io n , 4 -Ch a n n e l/Du a l 2 -Ch a n n e l,
Lo w -Vo lt a g e , CMOS An a lo g Mu lt ip le x e rs
_________________________________Te s t Circ u it s /Tim in g Dia g ra m s (c o n t in u e d )
+5V
R
S
NO
EN
V+
+3V
0V
V
EN
LOGIC
INPUT
V
EN
OFF
ON
OFF
V
S
MAX4518
MAX4519
A0
A1
CHANNEL
SELECT
COM
V
OUT
∆V
OUT
C = 1000nF
L
V
OUT
GND
V-
∆V IS THE MEASURED VOLTAGE DUE TO CHARGE TRANSFER
OUT
ERROR Q WHEN THE CHANNEL TURNS OFF.
-5V
Q = ∆V x C
OUT
L
Figure 5. Charge Injection
8/MAX4519
10nF
NO
V+
V
V
OUT
NETWORK
ANALYZER
OFF ISOLATION = 20log
IN
V
IN
50Ω
50Ω
V+
V
OUT
V+
EN
A
ON LOSS = 20log
V
IN
V
OUT
MAX4518
MAX4519
CROSSTALK = 20log
V
OUT
V
IN
V+
MEAS.
REF
COM
GND
V-
50Ω
50Ω
10nF
NOTES: MEASUREMENTS ARE STANDARDIZED AGAINST SHORT AT SOCKET TERMINALS.
OFF ISOLATION IS MEASURED BETWEEN COM AND “OFF” TERMINAL ON EACH SWITCH.
ON LOSS IS MEASURED BETWEEN COM AND “ON” TERMINAL ON EACH SWITCH.
CROSSTALK IS MEASURED BETWEEN COMA AND COMB
V-
TERMINALS ON EACH DEVICE.
SIGNAL DIRECTION THROUGH SWITCH IS REVERSED; WORST VALUES ARE RECORDED.
Figure 6. Off Isolation, On Loss, Crosstalk
+5V
V+
A2
A1
A0
NO1
NO8
1MHz
CAPACITANCE
ANALYZER
CHANNEL
SELECT
MAX4518
MAX4519
COM
GND EN
V-
f = 1MHz
-5V
Figure 7. NO/COM Capacitance
10 ______________________________________________________________________________________
P re c is io n , 4 -Ch a n n e l/Du a l 2 -Ch a n n e l,
Lo w -Vo lt a g e , CMOS An a lo g Mu lt ip le x e rs
8/MAX4519
__________________________________________Fu n c t io n a l Dia g ra m s /Tru t h Ta b le s
V+
V-
GND
V+
V-
GND
MAX4518
MAX4519
NO2A
NO1A
NO2B
NO1B
NO1
NO2
NO3
NO4
COMA
COMB
COM
A0
A1
EN
A0
A1
EN
MAX4518
MAX4519
A1
A0
EN ON SWITCH
A1
A0
EN ON SWITCH
X
0
0
1
1
X
0
1
0
1
0
1
1
1
1
NONE
NO1
NO2
NO3
NO4
X
0
0
1
1
X
0
1
0
1
0
1
1
1
1
NONE
N01A, NO1B
N02A, NO1B
N01A, NO2B
N02A, NO2B
LOGIC "O" V ≤ +0.8 V, LOGIC "1" V ≥ +2.4 V
AL
AH
_____________________________________________P in Co n fig u ra t io n s (c o n t in u e d )
TOP VIEW
MAX4518
LOGIC
MAX4519
LOGIC
A0
EN
A1
A0
EN
1
2
3
4
5
6
7
14
13
12
11
10
9
A1
1
2
3
4
5
6
7
14
13
12
11
10
9
GND
V+
GND
V+
V-
V-
NO1
NO1A
NO3
NO4
N.C.
N.C.
NO1B
NO2B
COMB
N.C.
NO2
COM
N.C.
NO2A
COMA
N.C.
8
8
DIP/SO
DIP/SO
N.C. = NOT INTERNALLY CONNECTED
______________________________________________________________________________________ 11
P re c is io n , 4 -Ch a n n e l/Du a l 2 -Ch a n n e l,
Lo w -Vo lt a g e , CMOS An a lo g Mu lt ip le x e rs
_Ord e rin g In fo rm a t io n (c o n t in u e d )
PART
TEMP. RANGE
0°C to +70°C
0°C to +70°C
0°C to +70°C
0°C to +70°C
0°C to +70°C
-40°C to +85°C
-40°C to +85°C
-55°C to +125°C
PIN-PACKAGE
14 Plastic DIP
14 SO
MAX4519CPD
MAX4519CSD
MAX4519CEE
MAX4519C/D
MAX4519EPD
MAX4519ESD
MAX4519EEE
MAX4519MJD
16 QSOP
Dice*
14 Plastic DIP
14 SO
16 QSOP
14 CERDIP**
* Contact factory for dice specifications.
** Contact factory for package availability.
8/MAX4519
__________________________________________________________Ch ip To p o g ra p h ie s
MAX4518
MAX4519
V-
EN A0
A1 GND
V-
EN A0
A1 GND
V+
V+
0. 063"
0. 063"
(1. 6mm)
(1. 6mm)
NO1B
NO2B
NO3
NO4
NO1A
NO2A
NO1
NO2
COMA COMB
COM N. C.
0. 081"
0. 081"
(2. 05mm)
(2. 05mm)
TRANSISTOR COUNT: 86
SUBSTRATE CONNECTED TO V+
TRANSISTOR COUNT: 86
SUBSTRATE CONNECTED TO V+
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are
implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.
12 ____________________Ma x im In t e g ra t e d P ro d u c t s , 1 2 0 S a n Ga b rie l Drive , S u n n yva le , CA 9 4 0 8 6 4 0 8 -7 3 7 -7 6 0 0
© 1998 Maxim Integrated Products
Printed USA
is a registered trademark of Maxim Integrated Products.
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