MAX307MJI [MAXIM]
Precision, 16-Channel/Dual 8-Channel, High-Performance, CMOS Analog Multiplexers; 高精度， 16通道/双8通道，高性能， CMOS模拟多路复用器
| 型号： | MAX307MJI |
| 厂家： | 
MAXIM INTEGRATED PRODUCTS |
| 描述： | Precision, 16-Channel/Dual 8-Channel, High-Performance, CMOS Analog Multiplexers |
| 文件： | 总12页 (文件大小：150K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
19-0270; Rev 0; 8/94
P re c is io n , 1 6 -Ch a n n e l/Du a l 8 -Ch a n n e l,
Hig h -P e rfo rm a n c e , CMOS An a lo g Mu lt ip le x e rs
6/MAX307
_______________Ge n e ra l De s c rip t io n
____________________________Fe a t u re s
♦ Guaranteed On-Resistance Match Between
The MAX306/MAX307 p re c is ion, monolithic , CMOS
analog multiplexers (muxes) offer low on-resistance
(le s s tha n 100Ω), whic h is ma tc he d to within 5Ω
between channels and remains flat over the specified
analog signal range (7Ω max). They also offer low leak-
Channels, <5Ω Max
♦ Low On-Resistance, <100Ω Max
♦ Guaranteed Flat On-Resistance over Specified
Signal Range, 7Ω Max
a g e ove r te mp e ra ture (I
le s s tha n 2.5nA a t
NO(OFF)
♦ Guaranteed Charge Injection, <10pC
+85°C) and fast switching speeds (t
less than
TRANS
♦ I
♦ I
Leakage <2.5nA at +85°C
NO(OFF)
250ns). The MAX306 is a single-ended 1-of-16 device,
and the MAX307 is a differential 2-of-8 device.
Leakage <20nA at +85°C
COM(OFF)
♦ ESD Protection >2000V
♦ Plug-In Upgrade for Industry-Standard
DG406/DG407/DG506A/DG507A
The MAX306/MAX307 a re fa b ric a te d with Ma xim’s
improved 44V silicon-gate process. Design improve-
ments yield extremely low charge injection (less than
10pC) and guarantee electrostatic discharge (ESD)
protection greater than 2000V.
♦ Single-Supply Operation (+4.5V to +30V)
Bipolar-Supply Operation (±4.5V to ±20V)
♦ Low Power Consumption, <1.25mW
♦ Rail-to-Rail Signal Handling
♦ TTL/CMOS-Logic Compatible
These muxes operate with a single +4.5V to +30V sup-
ply, or bipolar ±4.5V to ±20V supplies, while retaining
TTL/CMOS-logic input compatibility and fast switching.
CMOS inputs provide reduced input loading. These
improved parts are plug-in upgrades for the industry-
standard DG406, DG407, DG506A, and DG507A.
______________Ord e rin g In fo rm a t io n
PART
TEMP. RANGE
PIN-PACKAGE
28 Plastic DIP
28 Wide SO
Dice*
MAX306CPI
MAX306CWI
MAX306C/D
MAX306EPI
MAX306EWI
MAX306EQI
MAX306MJI
0°C to +70°C
________________________Ap p lic a t io n s
Sample-and-Hold Circuits
Test Equipment
0°C to +70°C
0°C to +70°C
-40°C to +85°C
-40°C to +85°C
-40°C to +85°C
-55°C to +125°C
28 Plastic DIP
28 Wide SO
28 PLCC
Heads-Up Displays
Guidance and Control Systems
Military Radios
Communications Systems
Battery-Operated Systems
PBX, PABX
28 CERDIP
Ordering Information continued at end of data sheet.
* Contact factory for dice specifications.
Audio Signal Routing
_____________________P in Co n fig u ra t io n s /Fu n c t io n a l Dia g ra m s /Tru t h Ta b le s
V+
V-
GND
TOP VIEW
27 26
28
4
3
2
1
NO1
NO2
NO3
NO4
5
6
7
8
9
NO15
NO14
NO13
NO12
NO11
25
NO7
NO5
NO6
24 NO6
23 NO5
22 NO4
21 N03
20 N02
NO7
NO8
COM
NO9
MAX306
NO10
NO11
NO12
NO13
NO14
NO15
NO16
NO10 10
NO9
11
19
N01
12
14 15
17
18
CMOS DECODERS/DRIVERS
A0 A1 A2 A3 EN
13
16
PLCC
N.C. = NO INTERNAL CONNECTION
Continued at end of data sheet.
MAX306 16-CHANNEL SINGLE-ENDED MULTIPLEXER
________________________________________________________________ Maxim Integrated Products
1
Ca ll t o ll fre e 1 -8 0 0 -9 9 8 -8 8 0 0 fo r fre e s a m p le s o r lit e ra t u re .
P re c is io n , 1 6 -Ch a n n e l/Du a l 8 -Ch a n n e l,
Hig h -P e rfo rm a n c e , CMOS An a lo g Mu lt ip le x e rs
ABSOLUTE MAXIMUM RATINGS
Voltage Referenced to V-
Wide SO (derate 12.50mW/°C above +70°C)............1000mW
PLCC (derate 10.53mW/°C above +70°C) ..................842mW
CERDIP (derate 16.67mW/°C above +70°C).............1333mW
Operating Temperature Ranges
MAX30_C_ _ .......................................................0°C to +70°C
MAX30_E_ _.....................................................-40°C to +85°C
MAX30_MJI....................................................-55°C to +125°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10sec) .............................+300°C
V+ ............................................................................-0.3V, 44V
GND.........................................................................-0.3V, 25V
Digital Inputs, NO, COM (Note 1)...........(V- - 2V) to (V+ + 2V) or
30mA (whichever occurs first)
Continuous Current (any terminal)......................................30mA
Peak Current, NO or COM
(pulsed at 1ms, 10% duty cycle max) ..........................100mA
Continuous Power Dissipation (T = +70°C)
A
Plastic DIP (derate 9.09mW/°C above +70°C) ............727mW
Note 1: Signals on NO, COM, A0, A1, A2, A3, or EN exceeding V+ or V- are clamped by internal diodes. Limit forward current to
maximum current ratings.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
6/MAX307
ELECTRICAL CHARACTERISTICS—Dual Supplies
(V+ = +15V, V- = -15V, GND = 0V, V = +2.4V, V = +0.8V, T = T
to T , unless otherwise noted.)
MAX
AH
AL
A
MIN
MIN
TYP
(Note 2)
MAX
PARAMETER
SWITCH
SYMBOL
CONDITIONS
UNITS
V
V
COM
,
NO
Analog Signal Range
On-Resistance
(Note 3)
-15
15
V
Ω
Ω
Ω
T
= +25°C
60
1.5
100
125
5
A
I
NO
= -1.0mA,
R
ON
V
COM
= ±10V
T
A
= T
to T
MIN
MAX
MAX
MAX
T
A
= +25°C
On-Resistance Matching
Between Channels
I
NO
= -1.0mA,
∆R
ON
V
COM
= ±10V (Note 4)
T
A
= T
to T
8
MIN
T
A
= +25°C
1.8
7
I
NO
= -1.0mA,
On-Resistance Flatness
R
FLAT
V
= ±5V or 0V
= +10V,
COM
T
A
= T
to T
10
MIN
T
A
= +25°C
-0.5
-2.5
-5.0
-0.75
-20
0.01
0.5
2.5
5.0
0.75
20
V
COM
NO-Off Leakage Current
(Note 5)
I
V
V
EN
= ±10V,
= 0V
C, E
M
nA
NO(OFF)
NO
T
= T
A
MIN
to T
MAX
T
A
= +25°C
0.02
0.02
0.02
0.02
V
NO
= ±10V,
V
COM
= +10V, MAX306
C, E
M
T
= T
A
MIN
V
EN
= 0V
to T
MAX
-40
40
COM-Off Leakage Current
(Note 5)
I
nA
COM(OFF)
T
A
= +25°C
-0.75
-10
0.75
10
V
NO
= +10V,
V
COM
= ±10V, MAX307
C, E
M
T
= T
A
MIN
V
EN
= 0V
to T
MAX
-20
20
T
A
= +25°C
-0.75
-25
0.75
25
V
V
NO
= ±10V,
= ±10V,
MAX306
MAX307
C, E
M
COM
T
= T
A
MIN
to T
MAX
-50
50
COM-On Leakage Current
(Note 5)
I
sequence
each switch
on
nA
COM(ON)
T
A
= +25°C
-0.75
-12.5
-25
0.75
12.5
25
C, E
M
T
= T
A
MIN
to T
MAX
2
_______________________________________________________________________________________
P re c is io n , 1 6 -Ch a n n e l/Du a l 8 -Ch a n n e l,
Hig h -P e rfo rm a n c e , CMOS An a lo g Mu lt ip le x e rs
6/MAX307
ELECTRICAL CHARACTERISTICS—Dual Supplies (continued)
(V+ = +15V, V- = -15V, GND = 0V, V = +2.4V, V = +0.8V, T = T
to T , unless otherwise noted.)
MAX
AH
AL
A
MIN
MIN
TYP
(Note 2)
MAX
PARAMETER
SYMBOL
CONDITIONS
UNITS
INPUT
Input Current with
Input Voltage High
I
V
= 2.4V or 15V
-1.0
-1.0
1.0
1.0
µA
µA
AH
A
Input Current with
Input Voltage Low
V
= 0V or 2.4V,
= 0V
EN
I
AL
V
A
SUPPLY
Power-Supply Range
±4.5
±20
30
75
0.5
1
V
T
= +25°C
16
A
V
= V = 0V or 4.5V
A
µA
EN
T
A
= T
to T
MIN
MAX
MAX
MAX
Positive Supply Current
I+
I-
T = +25°C
A
0.075
V
= 2.4V,
EN
mA
µA
V
A(ALL)
= 0V or 2.4V
T
A
= T
to T
MIN
T = +25°C
A
-1
1
V
= 2.4V,
EN
Negative Supply Current
DYNAMIC
V
A(ALL)
= 0V or 2.4V
T
A
= T
to T
-10
10
MIN
T
= +25°C
110
300
400
A
Transistion Time
t
Figure 2
Figure 4
Figure 3
ns
ns
ns
TRANS
T
A
= T to T
MIN MAX
Break-Before-Make Interval
Enable Turn-On Time
t
T
A
= +25°C
= +25°C
10
40
OPEN
T
A
130
200
400
150
300
t
ON(EN)
T
A
= T
to T
MIN
MAX
MAX
T
A
= +25°C
55
2
Enable Turn-Off Time
t
Figure 3
ns
OFF(EN)
Q
T
A
= T
to T
MIN
C
= 1.0nF,
L
Charge Injection
(Note 3)
V
NO
= 0V,
T
A
= +25°C
= +25°C
10
pC
R
S
= 0Ω, Figure 5
V
EN
= 0V,
Off Isolation
(Note 6)
V
ISO
R
L
= 1kΩ,
T
A
-69
dB
dB
f = 100kHz, Figure 6
V
EN
= 2.4V,
f = 100kHz,
= 1V
Crosstalk Between Channels
V
CT
T
A
= +25°C
-92
V
,
P-P
GEN
R
L
= 1kΩ, Figure 7
Logic Input Capacitance
NO-Off Capacitance
C
f = 1MHz
f = 1MHz,
T
= +25°C
T = +25°C
A
8
8
pF
pF
IN
A
C
V
= V = 0V,
NO(OFF)
EN
NO
Figure 8
f = 1MHz,
MAX306
MAX307
MAX306
MAX307
130
65
V
EN
= 0.8V,
COM-Off Capacitance
COM-On Capacitance
C
T
= +25°C
= +25°C
pF
pF
COM(OFF)
COM(ON)
A
V
COM
= 0V,
Figure 8
f = 1MHz,
140
70
V
EN
= 2.4V,
C
T
A
V
COM
= 0V,
Figure 8
_______________________________________________________________________________________
3
P re c is io n , 1 6 -Ch a n n e l/Du a l 8 -Ch a n n e l,
Hig h -P e rfo rm a n c e , CMOS An a lo g Mu lt ip le x e rs
ELECTRICAL CHARACTERISTICS—Single Supply
(V+ = +12V, V- = 0V, GND = 0V, V = +2.4V, V = +0.8V, T = T
to T , unless otherwise noted.)
MAX
AH
AL
A
MIN
MIN
TYP
(Note 2)
MAX
PARAMETER
SWITCH
SYMBOL
CONDITIONS
UNITS
V
V
COM
,
NO
Analog Signal Range
(Note 3)
0
12
V
I
V
= -1.0mA
NO
On-Resistance
R
T
A
= +25°C
120
175
Ω
ON
= 3V or 10V
COM
DYNAMIC
V
V
NO8
= 8V,
= 0V,
NO1
Transition Time
(Note 3)
t
T
= +25°C
= +25°C
130
105
450
600
ns
ns
TRANS
A
V
= 2.4V,
IN
Figure 1
V
= 2.4V,
= 0V,
= 5V,
INH
6/MAX307
Enable Turn-On Time
(Note 3)
V
INL
V
NO1
t
T
A
ON(EN)
Figure 3
V
V
INL
= 2.4V,
= 0V,
INH
Enable Turn-Off Time
(Note 3)
t
T
= +25°C
= +25°C
80
2
300
10
ns
OFF(EN)
A
V
= 5V,
NO1
Figure 3
C
= 1.0nF,
= 0V,
= 0Ω
L
Charge Injection
(Note 3)
Q
V
T
A
pC
NO
R
S
Note 2: The algebraic convention where the most negative value is a minimum and the most positive value a maximum is used in
this data sheet.
Note 3: Guaranteed by design.
Note 4: ∆R
= R
- R . On-resistance match between channels and flatness are guaranteed only with specified
ON(MIN)
ON
ON(MAX)
voltages. Flatness is defined as the difference between the maximum and minimum value of on-resistance as measured at
the extremes of the specified analog signal range.
Note 5: Leakage parameters are 100% tested at the maximum rated hot temperature and guaranteed by correlation at +25°C.
Note 6: Off isolation = 20log V
/V , where V
= output and V = input to off switch.
COM NO
COM NO
4
_______________________________________________________________________________________
P re c is io n , 1 6 -Ch a n n e l/Du a l 8 -Ch a n n e l,
Hig h -P e rfo rm a n c e , CMOS An a lo g Mu lt ip le x e rs
6/MAX307
__________________________________________Typ ic a l Op e ra t in g Ch a ra c t e ris t ic s
(T = +25°C, unless otherwise noted.)
A
ON-RESISTANCE vs. V
COM
ON-RESISTANCE vs. V
COM
AND
ON-RESISTANCE vs. V
COM
(DUAL SUPPLIES)
TEMPERATURE (DUAL SUPPLIES)
(SINGLE SUPPLY)
400
120
160
140
120
100
80
V+ = +15V
V- = -15V
360
320
280
100
80
±5V
+125°C
+85°C
±10V
±15V
5V
240
200
60
40
20
0
+25°C
-55°C
60
160
±20V
10V
15V
40
20
0
120
80
20V
20
40
-20 -15 -10 -5
0
5
10 15 20
-15
-10
-5
0
5
10
15
0
5
10
15
V
COM
(V)
V
COM
(V)
V
COM
(V)
ON-RESISTANCE vs. V
COM
AND
TEMPERATURE (SINGLE SUPPLY)
OFF LEAKAGE vs. TEMPERATURE
ON LEAKAGE vs. TEMPERATURE
1000
100
1000
100
160
140
120
100
80
V+ = +15V
V- = 0V
V+ = +15V
V- = -15V
V+ = +15V
V- = -15V
+125°C
+85°C
+25°C
10
10
1
1
I
COM (ON)
0.1
0.1
-55°C
60
0.01
0.001
0.0001
0.01
0.001
0.0001
40
20
0
I
NO (OFF)
I
COM (ON)
0
5
10
15
-55 -35 -15
5
25 45 65 85 105 125
-55 -35 -15
5
25 45 65 85 105 125
TEMPERATURE (°C)
TEMPERATURE (°C)
V
COM
(V)
SUPPLY CURRENT vs. TEMPERATURE
CHARGE INJECTION vs. V
COM
30
100
10
I+
20
10
V+ = +15V
V- = -15V
1
0
-10
-20
-30
V+ = 12V
V- = 0V
0.1
0.01
I-
V+ = +15V
V- = -15V
V
EN
= V = 0V, 4.5V
A
0.001
-55 -35 -15
5
25 45 65 85 105 125
-15
-10
-5
0
5
10
15
TEMPERATURE (°C)
V
COM
(V)
_______________________________________________________________________________________
5
P re c is io n , 1 6 -Ch a n n e l/Du a l 8 -Ch a n n e l,
Hig h -P e rfo rm a n c e , CMOS An a lo g Mu lt ip le x e rs
_____________________________________________________________P in De s c rip t io n s
MAX306
PIN
MAX307
PIN
NAME
FUNCTION
NAME
FUNCTION
1
2, 3, 13
4–11
12
V+
N.C.
Positive Supply Voltage Input
No Internal Connections
Analog Inputs–bidirectional
Ground
1
2
V+
COMB
N.C.
Positive Supply Voltage Input
Output B–bidirectional
No Internal Connection
Analog Inputs–bidirectional
Ground
NO16–NO9
GND
3, 13, 14
4–11
12
NO8B–NO1B
GND
14–17
18
A3–A0
EN
Address Inputs
Enable Inputs
15, 16, 17
18
A2, A1, A0
EN
Address Inputs
19–26
27
NO1–NO8
V-
Analog Inputs–bidirectional
Negative Supply Voltage Input
Output–bidirectional
Enable Input
0
19–26
27
NO1A–NO8A
V-
Analog Inputs–bidirectional
Negative Supply Voltage Input
Output A–bidirectional
28
COM
28
COMA
signal range to 1V above V+ and 1V below V-, but low
switch resistance and low leakage characteristics are
unaffected. Device operation is unchanged, and the
difference between V+ and V- should not exceed +44V.
__________Ap p lic a t io n s In fo rm a t io n
Op e ra t io n w it h S u p p ly Vo lt a g e s
Ot h e r t h a n ±1 5 V
Using supply voltages other than ±15V will reduce the
analog signal range. The MAX306/MAX307 switches
operate with ±4.5V to ±20V bipolar supplies or with a
+4.5V to +30V single supply; connect V- to GND when
operating with a single supply. Also, both device types
can operate with unbalanced supplies such as +24V
and -5V. The Typical Operating Characteristics graphs
show typical on-resistance with 20V, 15V, 10V, and 5V
supplies. (Switching times increase by a factor of two
or more for operation at 5V.)
V+
NO
COM
Ove rvo lt a g e P ro t e c t io n
Proper power-supply sequencing is recommended for
all CMOS devices. Do not exceed the absolute maxi-
mum ratings because stresses beyond the listed rat-
ings may cause permanent damage to the devices.
Always sequence V+ on first, then V-, followed by either
the log ic inp uts , NO, or COM. If p owe r-s up p ly
s e q ue nc ing is not p os s ib le , a d d two s ma ll s ig na l
diodes in series with supply pins for overvoltage pro-
tection (Figure 1). Adding diodes reduces the analog
V
g
V-
Figure 1. Overvoltage Protection Using External Blocking
Diodes
6
_______________________________________________________________________________________
P re c is io n , 1 6 -Ch a n n e l/Du a l 8 -Ch a n n e l,
Hig h -P e rfo rm a n c e , CMOS An a lo g Mu lt ip le x e rs
6/MAX307
______________________________________________Te s t Circ u it s /Tim in g Dia g ra m s
+15V
V+
NO1
A0
A1
A2
A3
±10V
+10V
NO2-NO15
MAX306
NO16
COM
tr < 20ns
LOGIC
INPUT
+3V
0V
EN
t < 20ns
V
f
OUT
50%
GND
V-
35pF
50Ω
300Ω
-15V
V
NO1
+15V
V+
90%
SWITCH
OUTPUT
V
OUT
NO1B
A0
A1
A2
±10V
+10V
0V
90%
NO1A-NO8A
NO8B
V
NO16
t
t
TRANS
ON
TRANS
EN
COMB
V-
MAX307
V
OUT
GND
35pF
50Ω
300Ω
-15V
Figure 2. Transition Time
+15V
V+
EN
NO1
-5V
A0
A1
NO2-NO16
MAX306
A2
A3
tr < 20ns
COM
V
OUT
+3V
0V
t < 20ns
LOGIC
INPUT
f
GND
V-
50%
50Ω
35pF
1kΩ
t
t
OFF(EN)
ON(EN)
-15V
0V
+15V
V+
10%
SWITCH
OUTPUT
EN
NO1B
-5V
NO1A-NO8A
NO2B-NO8B,
COMA
90%
V
OUT
A0
A1
A2
MAX307
COMB
V-
V
OUT
GND
50Ω
35pF
1kΩ
-15V
Figure 3. Enable Switching Time
_______________________________________________________________________________________
7
P re c is io n , 1 6 -Ch a n n e l/Du a l 8 -Ch a n n e l,
Hig h -P e rfo rm a n c e , CMOS An a lo g Mu lt ip le x e rs
_________________________________Te s t Circ u it s /Tim in g Dia g ra m s (c o n t in u e d )
+15V
V+
tr < 20ns
+2.4V
EN
+3V
0V
t < 20ns
LOGIC
INPUT
f
50%
A0
A1
NO1-NO16
+5V
V
OUT
A2
A3
MAX306
80%
SWITCH
OUTPUT
COM
V
OUT
GND
V-
35pF
t
OPEN
0V
300Ω
50Ω
6/MAX307
-15V
Figure 4. Break-Before-Make Interval
+15V
R
S
NO1-NO16 V+
EN
+3V
0V
LOGIC
INPUT
OFF
ON
OFF
V
S
A0
A1
COM
CHANNEL
SELECT
V
OUT
MAX306
A2
∆V
OUT
A3
C = 1000nF
L
V
OUT
GND
V-
∆V IS THE MEASURED VOLTAGE DUE TO CHARGE TRANSFER
OUT
ERROR Q WHEN THE CHANNEL TURNS OFF.
-15V
Q = C = ∆V
L
OUT
Figure 5. Charge Injection
8
_______________________________________________________________________________________
P re c is io n , 1 6 -Ch a n n e l/Du a l 8 -Ch a n n e l,
Hig h -P e rfo rm a n c e , CMOS An a lo g Mu lt ip le x e rs
6/MAX307
_________________________________Te s t Circ u it s /Tim in g Dia g ra m s (c o n t in u e d )
10nF
+15V
V+
10nF
+15V
V+
V
OUT
V
IN
NO1
NO2
NO1
R =
L
R = 50Ω
S
1kΩ
NO16
NO16
A0
A1
A2
COM
V
OUT
A0
A1
A2
COM
R = 50Ω
S
MAX306
EN
R = 1kΩ
L
MAX306
EN
A3
GND
V-
A3
GND
V-
10nF
-15V
10nF
-15V
V
OUT
OFF ISOLATION = 20log
V
OUT
V
IN
CROSSTALK = 20log
V
IN
Figure 6. Off Isolation
Figure 7. Crosstalk
+15V
V+
A3
NO1
Meter
A2
A1
A0
CHANNEL
SELECT
MAX306
NO16
Impedance
Analyzer
COM
f = 1MHz
GND
EN
V-
-15V
Figure 8. NO/COM Capacitance
_______________________________________________________________________________________
9
P re c is io n , 1 6 -Ch a n n e l/Du a l 8 -Ch a n n e l,
Hig h -P e rfo rm a n c e , CMOS An a lo g Mu lt ip le x e rs
________P in Co n fig u ra t io n s /Fu n c t io n a l Dia g ra m s /Tru t h Ta b le s (c o n t in u e d )
TOP VIEW
V+
1
2
3
4
5
6
7
8
9
28 COM
ON
Switch
A3
A2
A1
A0
EN
N.C.
N.C.
27
26
25
24
23
22
21
20
19
18
17
16
15
V-
NO8
NO7
NO6
NO5
NO4
NO3
NO2
NO1
EN
X
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
X
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
X
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
X
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
None
1
2
3
4
5
6
7
8
NO16
NO15
NO14
MAX306
NO13
NO12
NO11
9
10
11
12
13
14
15
16
6/MAX307
NO10 10
NO9
11
GND 12
N.C.
A0
A1
13
A3 14
MAX306
LOGIC “0” V ≤ 0.8V, LOGIC “1” = V ≥ 2.4V
A2
AL
AH
DIP/SO
TOP VIEW
V+
COMB
N.C.
1
2
3
4
5
6
7
8
9
COMA
28
27 V-
ON
Switch
26 NO8A
A2
A1
A0
EN
NO8B
25
24
23
22
21
20
19
18
17
16
15
NO7A
NO6A
X
0
0
0
0
1
1
1
1
X
0
0
1
1
0
0
1
1
X
0
1
0
1
0
1
0
1
0
1
1
1
1
1
1
1
1
None
1
2
3
4
5
6
7
8
NO7B
NO6B
NO5B
NO4B
MAX307
NO5A
NO4A
NO3A
NO2A
NO1A
EN
NO3B
NO2B 10
MAX307
11
12
13
14
NO1B
GND
N.C.
A0
LOGIC “0” V ≤ 0.8V, LOGIC “1” = V ≥ 2.4V
AL
AH
A1
N.C.
A2
DIP/SO
10 ______________________________________________________________________________________
P re c is io n , 1 6 -Ch a n n e l/Du a l 8 -Ch a n n e l,
Hig h -P e rfo rm a n c e , CMOS An a lo g Mu lt ip le x e rs
6/MAX307
________P in Co n fig u ra t io n s /Fu n c t io n a l Dia g ra m s /Tru t h Ta b le s (c o n t in u e d )
V+
V-
GND
TOP VIEW
NO1A
NO2A
NO3A
NO4A
NO5A
NO6A
NO7A
NO8A
NO1B
NO2B
NO3B
NO4B
NO5B
NO6B
NO7B
NO8B
27 26
28
4
3
2
1
COMA
COMB
5
6
7
8
9
NO7B
NO6B
NO5B
NO4B
NO3B
25
NO7A
24 NO6A
23 NO5A
22 NO4A
21 N03A
20 N02A
MAX307
14 15
NO2B 10
NO1B
11
19
N01A
12
17
18
13
16
CMOS DECODERS/DRIVERS
EN
PLCC
A0
A1
A2
MAX307 8-CHANNEL DIFFERENTIAL MULTIPLEXER
N.C. = NO INTERNAL CONNECTION
_Ord e rin g In fo rm a t io n (c o n t in u e d )
PART
TEMP. RANGE
0°C to +70°C
PIN-PACKAGE
28 Plastic DIP
28 Wide SO
Dice*
MAX307CPI
MAX307CWI
MAX307C/D
MAX307EPI
MAX307EWI
MAX307EQI
MAX307MJI
0°C to +70°C
0°C to +70°C
-40°C to +85°C
-40°C to +85°C
-40°C to +85°C
-55°C to +125°C
28 Plastic DIP
28 Wide SO
28 PLCC
28 CERDIP
* Contact factory for dice specifications.
______________________________________________________________________________________ 11
P re c is io n , 1 6 -Ch a n n e l/Du a l 8 -Ch a n n e l,
Hig h -P e rfo rm a n c e , CMOS An a lo g Mu lt ip le x e rs
__________________________________________________________Ch ip To p o g ra p h ie s
MAX306
MAX307
EN A0
A1
A2
A3 N. C.
EN A0
A1
A2 N. C. N. C.
0. 184"
0. 184"
(4. 67mm)
(4. 67mm)
GND
GND
NO1
NO2
NO3
NO9
NO1A
NO2A
NO3A
NO1B
NO2B
NO10
6/MAX307
NO11
NO12
N013
NO14
NO3B
NO4B
N05B
NO6B
N04
NO5
NO6
NO7
N04A
NO5A
NO6A
NO7A
NO15
NO16
N. C.
NO7B
NO8B
COMB
NO8
NO8A
V-
COM
V+
V-
COMA
0. 078"
(1. 98mm)
V+
0. 078"
(1. 98mm)
N.C. = NO INTERNAL CONNECTION
TRANSISTOR COUNT: 269
SUBSTRATE IS INTERNALLY CONNECTED TO V+
TRANSISTOR COUNT: 269
SUBSTRATE IS INTERNALLY CONNECTED TO V+
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are
implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.
12 __________________Ma x im In t e g ra t e d P ro d u c t s , 1 2 0 S a n Ga b rie l Drive , S u n n yva le , CA 9 4 0 8 6 (4 0 8 ) 7 3 7 -7 6 0 0
© 1994 Maxim Integrated Products
Printed USA
is a registered trademark of Maxim Integrated Products.
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