MAX2601 [MAXIM]
3.6V, 1W RF Power Transistors for 900MHz Applications; 3.6V ， 1W RF功率晶体管为900MHz的应用
| 型号： | MAX2601 |
| 厂家： | 
MAXIM INTEGRATED PRODUCTS |
| 描述： | 3.6V, 1W RF Power Transistors for 900MHz Applications |
| 文件： | 总6页 (文件大小：51K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
19-1185; Rev 2; 5/97
3 .6 V, 1 W RF P o w e r Tra n s is t o rs
fo r 9 0 0 MHz Ap p lic a t io n s
1/MAX602
_______________Ge n e ra l De s c rip t io n
____________________________Fe a t u re s
The MAX2601/MAX2602 are RF power transistors opti-
mized for use in portable cellular and wireless equipment
that operates from three NiCd/NiMH cells or one Li-Ion
cell. These transistors deliver 1W of RF power from a
3.6V supply with efficiency of 58% when biased for con-
stant-envelope applications (e.g., FM or FSK). For NADC
(IS-54) operation, they deliver 29dBm with -28dBc ACPR
from a 4.8V supply.
♦ Low Voltage: Operates from 1 Li-Ion or
3 NiCd/NiMH Batteries
♦ DC-to-Microwave Operating Range
♦ 1W Output Power at 900MHz
♦ On-Chip Diode for Accurate Biasing (MAX2602)
♦ Low-Cost Silicon Bipolar Technology
♦ Does Not Require Negative Bias or Supply Switch
♦ High Efficiency: 58%
The MAX2601 is a high-performance silicon bipolar RF
p owe r tra ns is tor. The MAX2602 inc lud e s a hig h-
performance silicon bipolar RF power transistor, and a
biasing diode that matches the thermal and process
characteristics of the power transistor. This diode is
used to create a bias network that accurately controls
the power transistor’s collector current as the tempera-
ture changes.
The MAX2601/MAX2602 can be used as the final stage
in a discrete or module power amplifier. Silicon bipolar
technology eliminates the need for voltage inverters
and sequencing circuitry, as required by GaAsFET
power amplifiers. Furthermore, a drain switch is not
re q uire d to turn off the MAX2601/MAX2602. This
increases operating time in two ways: it allows lower
system end-of-life battery voltage, and it eliminates the
wasted power from a drain-switch device.
______________Ord e rin g In fo rm a t io n
PART
TEMP. RANGE
-40°C to +85°C
-40°C to +85°C
-40°C to +85°C
PIN-PACKAGE
8 PSOPII
8 PSOPII
Dice*
MAX2601ESA
MAX2602ESA
MAX2602E/D
*Dice are specified at T = +25°C, DC parameters only.
A
The MAX2601/MAX2602 a re a va ila b le in the rma lly
enhanced, 8-pin SO packages, which are screened to
the extended temperature range (-40°C to +85°C). The
MAX2602 is also available in die form.
________________________Ap p lic a t io n s
Narrow-Band PCS (NPCS)
915MHz ISM Transmitters
Microcellular GSM (Power Class 5)
AMPS Cellular Phones
_________________P in Co n fig u ra t io n s
TOP VIEW
C
E
E
B
C
E
8
7
6
5
C
E
E
B
1
2
3
4
8
7
6
5
C
E
E
B
1
2
3
4
Digital Cellular Phones
Two-Way Paging
BIAS
B
CDPD Modems
MAX2601
MAX2602
Land Mobile Radios
PSOPII
PSOPII
Typical Application Circuit appears at end of data sheet.
________________________________________________________________ Maxim Integrated Products
1
For free samples & the latest literature: http://www.maxim-ic.com, or phone 1-800-998-8800.
For small orders, phone 408-737-7600 ext. 3468.
3 .6 V, 1 W RF P o w e r Tra n s is t o rs
fo r 9 0 0 MHz Ap p lic a t io n s
ABSOLUTE MAXIMUM RATINGS
Collector-Emitter Voltage, Shorted Base (V
)....................17V
Operating Temperature Range ...........................-40°C to +85°C
Storage Temperature Range .............................-65°C to +165°C
Junction Temperature ......................................................+150°C
Lead Temperature (soldering, 10sec) .............................+300°C
CES
Emitter Base Reverse Voltage (V
)...................................2.3V
EBO
BIAS Diode Reverse Breakdown Voltage (MAX2602) ..........2.3V
Average Collector Current (I )........................................1200mA
C
Continuous Power Dissipation (T = +70°C)
A
PSOPII (derate 80mW/°C above +70°C) (Note 1) ..........6.4W
Note 1: Backside slug must be properly soldered to ground plane (see Slug Layout Techniques section).
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
DC ELECTRICAL CHARACTERISTICS
(T = T
to T , unless otherwise noted.)
MAX
A
MIN
PARAMETER
SYMBOL
BV
CONDITIONS
Open base
Shorted base
MIN
15
TYP
MAX
UNITS
CEO
Collector-Emitter Breakdown
Voltage
I
C
< 100µA
V
BV
15
CES
1/MAX602
Collector-Emitter Sustaining
Voltage
LV
I
= 200mA
5.0
V
V
CEO
C
Collector-Base Breakdown
Voltage
BV
I
C
< 100µA, emitter open
15
CBO
DC Current Gain
h
I
C
= 250mA, V = 3V
100
FE
CE
Collector Cutoff Current
Output Capacitance
I
V
= 6V, V = 0V
0.05
9.6
1.5
µA
pF
CES
CE
BE
C
V
= 3V, I = 0mA, f = 1MHz
OB
CB E
AC ELECTRICAL CHARACTERISTICS
(Test Circuit of Figure 1, V = 3.6V, V = 0.750V, Z
= Z
= 50Ω, P
= 30dBm, f = 836MHz, T = +25°C, unless oth-
OUT A
CC
BB
LOAD
SOURCE
erwise noted.)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
GHz
Frequency Range
Base Current
f
(Note 2)
DC
1
I
B
4.2
-43
-42
11.6
58
mA
V
= 3.6V, P
= 3.0V, P
= 30dBm
= 29dBm
dBc
CC
OUT
OUT
Harmonics
2fo, 3fo
V
CC
Power Gain
P
= 30dBm
dB
%
OUT
η
Collector Efficiency
No modulation
Stability under Continuous
Load Mismatch Conditions
V
SWR
V
CC
= 5.5V, all angles (Note 3)
8:1
IM3
IM5
NF
-16
-25
3.3
P
= +30dBm total power, f1 = 835MHz,
OUT
Two-Tone IMR
dBc
dB
f2 = 836MHz
V = 0.9V
BB
Noise Figure
Note 2: Guaranteed by design.
Note 3: Under these conditions: a) no spurious oscillations shall be observed at collector greater than -60dBc; b) no parametric
degradation is observable when mismatch is removed; and c) no current draw in excess of the package dissipation
capability is observed.
2
_______________________________________________________________________________________
3 .6 V, 1 W RF P o w e r Tra n s is t o rs
fo r 9 0 0 MHz Ap p lic a t io n s
1/MAX602
__________________________________________Typ ic a l Op e ra t in g Ch a ra c t e ris t ic s
(Test Circuit of Figure 1, input/output matching networks optimized for specific measurement frequency, V = 3.6V, V = 0.750V,
CC
BB
P
= 30dBm, Z
= Z
= 50Ω, f = 836MHz, T = +25°C, unless otherwise noted.)
OUT
LOAD
SOURCE
A
TWO-TONE OUTPUT POWER, IM3, IM5
vs. INPUT POWER
TWO-TONE OUTPUT POWER AND IM3
COLLECTOR CURRENT
vs. COLLECTOR CURRENT
1.0
0.8
0.6
0.4
0.2
0
35
25
15
5
31
P
, IM3, AND IM5
OUT
P
, IM3, AND IM5
OUT
P
OUT
ARE RMS COMPOSITE
TWO-TONE POWER
LEVELS
ARE RMS COMPOSITE
TWO-TONE POWER LEVELS
P
V
= 1.00V
OUT
BB
30
29
28
27
V
BB
= 0.95V
IM3
V
= 0.90V
BB
IM3
IM5
V
= 0.85V
3
BB
V
BB
= 0.80V
5
-5
0
1
2
4
6
5
10
15
INPUT POWER (dBm)
20
25
0.4
0.5
0.6
(A)
0.7
0.8
V
CE
(V)
I
CC
ACPR vs. OUTPUT POWER
(IS-54 π/4 DQPSK MODULATION, V = 0.85V)
COLLECTOR EFFICIENCY vs. OUTPUT POWER
(IS-54 π/4 DQPSK MODULATION, V = 0.85V)
TWO-TONE OUTPUT POWER, IM3, IM5
vs. INPUT POWER (f = 433MHz)
BB
BB
-20
60
50
40
30
20
10
0
35
25
15
5
P , IM3, AND IM5
OUT
P
OUT
3.0V
-22
-24
-26
ARE RMS COMPOSITE
TWO-TONE POWER
LEVELS
3.0V
3.6V
P
, IM3, AND IM5
OUT
IM3
-28
-30
-32
-34
-36
-38
-40
ARE RMS COMPOSITE
TWO-TONE
POWER LEVELS
3.6V
4.2V
4.2V
IM5
4.8V
4.8V
-5
10
15
20
25
30
35
10
15
20
25
30
35
5
10
15
INPUT POWER (dBm)
20
25
OUTPUT POWER (dBm)
OUTPUT POWER (dBm)
______________________________________________________________P in De s c rip t io n
PIN
NAME
FUNCTION
MAX2601
MAX2602
1, 8
1, 8
C
E
Transistor Collector
Transistor Emitter
2, 3, 6, 7, Slug
2, 6, 7, Slug
Anode of the Biasing Diode that matches the thermal and process char-
acteristics of the power transistor. Requires a high-RF-impedance, low-
DC-impedance (e.g., inductor) connection to the transistor base (Pin 4).
Current through the biasing diode (into Pin 3) is proportional to 1/15 the
collector current in the transistor.
—
3
BIAS
B
4, 5
4, 5
Transistor Base
_______________________________________________________________________________________
3
3 .6 V, 1 W RF P o w e r Tra n s is t o rs
fo r 9 0 0 MHz Ap p lic a t io n s
V
CC
V
BB
5Ω
1000pF
0.1µF
L1
0.1µF
1000pF
24Ω
100nH
1000pF
1
8
4
5
T2
1000pF
RF
IN
10pF
2pF
T1
2, 6, 7
BACKSIDE
SLUG
2pF
12pF
L1 = COILCRAFT A05T INDUCTOR, 18.5nH
T1, T2 = 1", 50Ω TRANSMISSION LINE ON FR-4
1/MAX602
Figure 1. Test Circuit
_______________De t a ile d De s c rip t io n
MAX2 6 0 1 /MAX2 6 0 2
The MAX2601/MAX2602 are high-performance silicon
bipolar transistors in power-enhanced, 8-pin SO pack-
ages. The base and collector connections use two pins
each to reduce series inductance. The emitter con-
nects to three (MAX2602) or four (MAX2601) pins in
addition to a back-side heat slug, which solders direct-
ly to the PC board ground to reduce emitter inductance
and improve thermal dissipation. The transistors are
intended to be used in the common-emitter configura-
tion for ma ximum p owe r g a in a nd p owe r-a d d e d
efficiency.
V
CC
V
CC
R
BIAS
RF
C
RF
OUT
C
OUT
RF
C
Q1
Q2
C
BIAS
Cu rre n t Mirro r Bia s
(MAX2 6 0 2 o n ly)
C
IN
The MAX2602 inc lud e s a hig h-p e rforma nc e s ilic on
bipolar RF power transistor and a thermally matched
biasing diode that matches the power transistor’s ther-
mal and process characteristics. This diode is used to
c re a te a b ia s ne twork tha t a c c ura te ly c ontrols the
power transistor’s collector current as the temperature
changes (Figure 2).
RF
IN
Figure 2. Bias Diode Application
temperature variations. Simply tying the biasing diode
to the supply through a resistor is adequate in most sit-
uations. If large supply variations are anticipated, con-
nect the biasing diode to a reference voltage through a
resistor, or use a stable current source. Connect the
biasing diode to the base of the RF power transistor
through a large RF impedance, such as an RF choke
(inductor), and decouple to ground through a surface-
mount chip capacitor larger than 1000pF.
The biasing diode is a scaled version of the power tran-
sistor’s base-emitter junction, in such a way that the
current through the biasing diode is 1/15 the quiescent
collector current of the RF power transistor. Supplying
the biasing diode with a constant current source and
connecting the diode’s anode to the RF power transis-
tor’s base ensures that the RF power transistor’s quies-
c e nt c olle c tor c urre nt re ma ins c ons ta nt throug h
4
_______________________________________________________________________________________
3 .6 V, 1 W RF P o w e r Tra n s is t o rs
fo r 9 0 0 MHz Ap p lic a t io n s
1/MAX602
S lu g La yo u t Te c h n iq u e s
__________Ap p lic a t io n s In fo rm a t io n
The mos t imp orta nt c onne c tion to ma ke to the
MAX2601/MAX2602 is the back side. It should connect
directly to the PC board ground plane if it is on the top
side, or through numerous plated through-holes if the
ground plane is buried. For maximum gain, this con-
nection should have very little self-inductance. Since it
is also the thermal path for heat dissipation, it must
have low thermal impedance, and the ground plane
should be large.
Op t im u m P o rt Im p e d a n c e
The source and load impedances presented to the
MAX2601/MAX2602 have a direct impact upon its gain,
output power, and linearity. Proper source- and load-
terminating impedances (Z and Z ) presented to the
S
L
power transistor base and collector will ensure optimum
performance.
For a power transistor, simply applying the conjugate of
the transistor’s input and output impedances calculated
from small-signal S-parameters will yield less than opti-
mum device performance.
For maximum efficiency at V
= 0.75V and V
=
BB
CC
3.6V, the optimum power-transistor source and load
impedances (as defined in Figure 3) are:
4
3
2
1
At 836MHz: Z = 5.5 + j2.0
S
Z = 6.5 + j1.5
MAX2601
MAX2602
L
2.8nH
2.8nH
2.8nH
At 433MHz: Z = 9.5 - j2.5
S
Z = 8.5 - j1.5
L
Z
and Z reflect the impedances that should be pre-
L
S
sented to the transistor’s base and collector. The pack-
age parasitics are dominated by inductance (as shown
in Figure 3), and need to be accounted for when calcu-
2.8nH
Z
S
Z
L
lating Z and Z .
S
L
The internal bond and package inductances shown
in Figure 3 should be included as part of the end-
application matching network, depending upon exact
layout topology.
5
6
7
8
Figure 3. Optimum Port Impedance
_______________________________________________________________________________________
5
3 .6 V, 1 W RF P o w e r Tra n s is t o rs
fo r 9 0 0 MHz Ap p lic a t io n s
________________________________________________________P a c k a g e In fo rm a t io n
INCHES
MILLIMETERS
DIM
MIN
0.053
MAX
0.069
0.010
0.019
0.010
0.157
MIN
1.35
0.10
0.35
0.19
3.80
MAX
1.75
0.25
0.49
0.25
4.00
A
D
A1 0.004
B
C
E
e
0.014
0.007
0.150
0°-8°
A
0.101mm
0.004in.
0.050
1.27
e
H
L
0.228
0.016
0.244
0.050
5.80
0.40
6.20
1.27
A1
C
B
L
INCHES
MILLIMETERS
DIM PINS
8-Pin PSOPII
MIN MAX
MIN
MAX
5.00
1/MAX602
8
0.189 0.197 4.80
D
E
H
21-0041A
6
_______________________________________________________________________________________
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