MAX2538 [MAXIM]

PLASTIC ENCAPSULATED DEVICES; 塑封器件


型号：	MAX2538
厂家：	MAXIM INTEGRATED PRODUCTS
描述：	PLASTIC ENCAPSULATED DEVICES 塑封器件
文件：	总8页 (文件大小：108K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MAX2531EGI

Rev. A

RELIABILITY REPORT

FOR

MAX2531EGI

PLASTIC ENCAPSULATED DEVICES

April 3, 2003

MAXIM INTEGRATED PRODUCTS

120 SAN GABRIEL DR.

SUNNYVALE, CA 94086

Written by

Reviewed by

Jim Pedicord

Quality Assurance

Reliability Lab Manager

Bryan J. Preeshl

Quality Assurance

Executive Director

Conclusion

The MAX2531 successfully meets the quality and reliability standards required of all Maxim products. In addition,

Maxim’s continuous reliability monitoring program ensures that all outgoing product will continue to meet Maxim’s quality

and reliability standards.

Table of Contents

I. ........Device Description

II. ........Manufacturing Information

III. .......Packaging Information

IV. .......Die Information

V. ........Quality Assurance Information

VI. .......Reliability Evaluation

......Attachments

I. Device Description

A. General

The MAX2531 multiband LNA/Mixer IC is optimized for CDMA, GSM, and TDMA applications in cellular

band. The MAX2531 IC features a GPS LNA/mixer signal path for E911 and Traveler Assistance applications. The

cellular signal can be routed to either IF port. For example, one IF port can be connected to an IF filter with 30kHz

band-width, while the other port can drive an IF filter with a wider bandwidth. The GPS band has its own IF port.

To optimize dynamic range at minimum current, the MAX2531 implements multiple LNA and mixer states,

including high gain/high linearity, high gain/low linearity, mid gain, low gain, and ultra low gain. In high-gain/high-

linearity mode, the high-intercept LNA minimizes desensitization in the presence of a large interfering signal. For the

other gain states, the LNA current is reduced to improve standby time. Each band is implemented with a separate

mixer to optimize performance for the specific band, and each mixer provides multiple linearity modes to optimize

linearity and current consumption. The ultra-low gain mode operates with very little current, which results in

significant power savings because the handset typically spends most of its time in this mode.

B. Absolute Maximum Ratings

Item

Rating

V_CCto GND

-0.3V to +4.3V

-0.3V to (VCC + 0.3V)

15dBm

Digital Input Voltage to Gnd

LNA Inout (Low-Gain Mode) Level

LO Input Level

5dBM

Digital Input Current

10mA

Junction Temperature

Operating Temperature Range

Storage Temp.

Lead Temp. (soldering 10 sec.)

Continuous Power Dissipation (TA = +70°C)

28-Pin QFN

+150°C

-40°C to +85°C

-65°C to +150°C

+300°C

1.6W

Derates above +70°C

28-Pin QFN

21mW/°C

II. Manufacturing Information

A. Description/Function:

B. Process:

Quadruple-Mode PCS/Cellular/GPS LNA/Mixers

MB20 Bi-CMOS Process

2538

C. Number of Device Transistors:

D. Fabrication Location:

E. Assembly Location:

F. Date of Initial Production:

Oregon, USA

Korea

April, 2002

III. Packaging Information

A. Package Type:

B. Lead Frame:

28-Pin QFN

Copper

C. Lead Finish:

Solder Plate

D. Die Attach:

Silver-Filled Epoxy

Gold (1.3 mil dia.)

Epoxy with silica filler

# 05-9000-0247

Class UL94-V0

E. Bondwire:

F. Mold Material:

G. Assembly Diagram:

H. Flammability Rating:

I. Classification of Moisture Sensitivity

per JEDEC standard JESD22-A112: Level 1

IV. Die Information

A. Dimensions:

89 x 87 mils

B. Passivation:

Si₃N₄(Silicon nitride)

C. Interconnect:

D. Backside Metallization:

E. Minimum Metal Width:

F. Minimum Metal Spacing:

G. Bondpad Dimensions:

H. Isolation Dielectric:

I. Die Separation Method:

None

1.2 microns (as drawn) Metal 1, 2 & 3 5.6 microns (as drawn) Metal 4

1.6 microns (as drawn) Metal 1, 2 & 3, 4.2 microns (as drawn) Metal 4

3.4 mil. Octagonal

SiO₂

Wafer Saw

V. Quality Assurance Information

A. Quality Assurance Contacts: Jim Pedicord

Bryan Preeshl

(Reliability Lab Manager)

(Executive Director of QA)

Kenneth Huening (Vice President)

B. Outgoing Inspection Level: 0.1% for all electrical parameters guaranteed by the Datasheet.

0.1% For all Visual Defects.

C. Observed Outgoing Defect Rate: < 50 ppm

D. Sampling Plan: Mil-Std-105D

VI. Reliability Evaluation

A. Accelerated Life Test

The results of the 150°C biased (static) life test are shown in Table 1. Using these results, the Failure

Rate (l ) is calculated as follows:

l =

1.83

(Chi square value for MTTF upper limit)

MTTF

192 x 9823 x 90 x 2

Temperature Acceleration factor assuming an activation energy of 0.8eV

l = 5.39 x 10^-9

l = 5.39 F.I.T. (60% confidence level @ 25°C)

This low failure rate represents data collected from Maxim’s reliability qualification and monitor programs.

Maxim also performs weekly Burn-In on samples from production to assure reliability of its processes. The

reliability required for lots which receive a burn-in qualification is 59 F.I.T. at a 60% confidence level, which equates

to 3 failures in an 80 piece sample. Maxim performs failure analysis on rejects from lots exceeding this level. The

attached Burn-In Schematic #06-7030 shows the static circuit used for this test. Maxim also performs 1000 hour

life test monitors quarterly for each process. This data is published in the Product Reliability Report (RR-1M).

B. Moisture Resistance Tests

Maxim evaluates pressure pot stress from every assembly process during qualification of each new design.

Pressure Pot testing must pass a 20% LTPD for acceptance. Additionally, industry standard 85°C/85%RH or

HAST tests are performed quarterly per device/package family.

C. E.S.D. and Latch-Up Testing

The WC19-3 die type has been found to have all pins able to withstand a transient pulse of ±800V, per Mil-

Std-883 Method 3015 (reference attached ESD Test Circuit).

Latch-Up testing has shown that this device withstands a current of ±250mA.

Table 1

Reliability Evaluation Test Results

MAX2531EGI

TEST ITEM

TEST CONDITION

FAILURE

IDENTIFICATION

SAMPLE

SIZE

NUMBER OF

FAILURES

Static Life Test (Note 1)

Ta = 150°C

Biased

DC Parameters

& functionality

Time = 192 hrs.

Moisture Testing (Note 2)

Pressure Pot

Ta = 121°C

P = 15 psi.

RH= 100%

Time = 168hrs.

DC Parameters

& functionality

85/85

Ta = 85°C

RH = 85%

Biased

DC Parameters

& functionality

Time = 1000hrs.

Mechanical Stress (Note 2)

Temperature

Cycle

-65°C/150°C

1000 Cycles

Method 1010

DC Parameters

Note 1: Life Test Data may represent plastic DIP qualification packages.

Note 2: Generic package/process data.

Attachment #1

TABLE II. Pin combination to be tested. 1/ 2/

Terminal A

Terminal B

(The common combination

of all like-named pins

(Each pin individually

connected to terminal A

with the other floating)

connected to terminal B)

All pins except V_PS13/

All input and output pins

All V_PS1pins

All other input-output pins

1/ Table II is restated in narrative form in 3.4 below.

2/ No connects are not to be tested.

3/ Repeat pin combination I for each named Power supply and for ground

(e.g., where V_PS1is V_DD, V_CC, V_SS, V_BB, GND, +V_S,-V_S, V_REF, etc).

3.4

Pin combinations to be tested.

Each pin individually connected to terminal A with respect to the device ground pin(s) connected

to terminal B. All pins except the one being tested and the ground pin(s) shall be open.

Each pin individually connected to terminal A with respect to each different set of a combination

of all named power supply pins (e.g., V_SS1, or V

or V

or V_CC1, or V_CC2) connected to

SS2

SS3

terminal B. All pins except the one being tested and the power supply pin or set of pins shall be

open.

Each input and each output individually connected to terminal A with respect to a combination of

all the other input and output pins connected to terminal B. All pins except the input or output pin

being tested and the combination of all the other input and output pins shall be open.

TERMINAL C

TERMINAL A

REGULATED

HIGH VOLTAGE

SUPPLY

DUT

SHORT

SOCKET

CURRENT

PROBE

(NOTE 6)

TERMINAL B

R = 1.5kW

C = 100pf

Mil Std 883D

Method 3015.7

Notice 8

TERMINAL D

ONCE PER SOCKET

ONCE PER BOARD

50 OHM

100 pF

50 OHM

28 - QFN

27 OHM

3.6V

100 nF

100 pF

DEVICES: MAX 2530/2531/2538/2539/2351/2358

MAX. EXPECTED CURRENT = 40mA

DRAWN BY: HAK TAN

NOTES:

DOCUMENT I.D. 06-7030

REVISION B

PAGE

MAXIM TITLE: BI Circuit (MAX2530/2531/2538/2539/2351/2358) WC19Z

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